KR980005881A

KR980005881A - Method of manufacturing semiconductor device

Info

Publication number: KR980005881A
Application number: KR1019960024493A
Authority: KR
Inventors: 이진순; 장명식
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1996-06-27
Filing date: 1996-06-27
Publication date: 1998-03-30

Abstract

본 발명은 반도체 소자의 제조방법에 있어서, 스페이서를 형성하지 않고 LDD구조의 소오스/드레인 영역을 형성할 수 있는 반도체 소자의 제조방법에 관한 것으로, 반도체 기판상에 절연막을 형성하는 단계; 절연막 상부에 제1폴리실리콘을 형성하는 단계; 제1폴리실리콘 상부에 제1폴리실리콘보다 도핑된 불순물 농도가 더 높은 제2폴리실리콘을 형성하는 단계; 절연막과 제1 및 제2 폴리실리콘을 식각하여 2중 구조의 게이트 전극을 형성하는 단계; 2중 구조의 게이트 전극을 식각 마스크로하여 반도체 기판 표면으로 불순물 이온을 주입하는 단계를 포함하는 것을 특징으로 한다.The present invention relates to a method of manufacturing a semiconductor device capable of forming a source / drain region of an LDD structure without forming a spacer in a method of manufacturing a semiconductor device, the method comprising: forming an insulating film on a semiconductor substrate; Forming a first polysilicon layer on the insulating film; Forming a second polysilicon layer on the first polysilicon layer, the second polysilicon layer having a higher impurity concentration than the first polysilicon layer; Etching the insulating film and the first and second polysilicon to form a gate electrode having a double structure; And implanting impurity ions into the surface of the semiconductor substrate using the double-structured gate electrode as an etching mask.

Description

Method of manufacturing semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2a도 내지 제2c도는 본 발명의 일 실시예에 따른 반도체 소자의 제조방법을 나타낸 단면도.FIGS. 2a to 2c are cross-sectional views illustrating a method of manufacturing a semiconductor device according to an embodiment of the present invention;

Claims

Forming an insulating film on the semiconductor substrate; Forming a first polysilicon layer on the insulating layer; forming a second polysilicon layer on the first polysilicon layer, the second polysilicon layer having a higher impurity concentration than the first polysilicon layer; Etching the insulating film and the first and second polysilicon to form a gate electrode having a double structure; And implanting impurity ions into the surface of the semiconductor substrate using the double-structured gate electrode as an etching mask.

The method of claim 1, wherein the second polysilicon has a higher etching rate than the first polysilicon.

※ Note: It is disclosed by the contents of the first application.