KR970003940A - Transistor manufacturing method of semiconductor device - Google Patents
Transistor manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR970003940A KR970003940A KR1019950018536A KR19950018536A KR970003940A KR 970003940 A KR970003940 A KR 970003940A KR 1019950018536 A KR1019950018536 A KR 1019950018536A KR 19950018536 A KR19950018536 A KR 19950018536A KR 970003940 A KR970003940 A KR 970003940A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- forming
- transistor
- silicon substrate
- manufacturing
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 반도체 소자의 트랜지스터 제조방법에 관한 것으로, 쇼트 채널 효과(Short Channel Effect)를 억제시키기 위하여 이중 구조의 LDD(Lightly Dopped Drain) 영역을 갖는 접합영역을 형성하므로써 소자의 전기적특성을 향상시킬 수 있도록 한 반도체 소자의 트랜지스터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor of a semiconductor device. In order to suppress short channel effects, the electrical properties of the device can be improved by forming a junction region having a double structured lightly doped drain (LDD) region. The present invention relates to a transistor manufacturing method of a semiconductor device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2D도는 본 발명에 따른 반도체 소자의 트랜지스터 제조방법을 설명하기 위한 소자의 단면도.2D is a cross-sectional view of a device for explaining a transistor manufacturing method of a semiconductor device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950018536A KR970003940A (en) | 1995-06-30 | 1995-06-30 | Transistor manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950018536A KR970003940A (en) | 1995-06-30 | 1995-06-30 | Transistor manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970003940A true KR970003940A (en) | 1997-01-29 |
Family
ID=66526593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950018536A KR970003940A (en) | 1995-06-30 | 1995-06-30 | Transistor manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970003940A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100873814B1 (en) * | 2002-07-05 | 2008-12-11 | 매그나칩 반도체 유한회사 | Semiconductor device having double lightly doped drain and method for fabricating ths same |
-
1995
- 1995-06-30 KR KR1019950018536A patent/KR970003940A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100873814B1 (en) * | 2002-07-05 | 2008-12-11 | 매그나칩 반도체 유한회사 | Semiconductor device having double lightly doped drain and method for fabricating ths same |
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