KR970008586A - Transistor manufacturing method of semiconductor device - Google Patents

Transistor manufacturing method of semiconductor device Download PDF

Info

Publication number
KR970008586A
KR970008586A KR1019950020973A KR19950020973A KR970008586A KR 970008586 A KR970008586 A KR 970008586A KR 1019950020973 A KR1019950020973 A KR 1019950020973A KR 19950020973 A KR19950020973 A KR 19950020973A KR 970008586 A KR970008586 A KR 970008586A
Authority
KR
South Korea
Prior art keywords
forming
gate electrode
semiconductor device
oxide film
silicon substrate
Prior art date
Application number
KR1019950020973A
Other languages
Korean (ko)
Inventor
황충호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950020973A priority Critical patent/KR970008586A/en
Publication of KR970008586A publication Critical patent/KR970008586A/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 반도체 소자의 트랜지스터 제조방법에 관한 것으로, 핫케리어 영향에 의한 소자의 특성 저하를 방지하기 위하여 접합영역을 게이트전극의 양측부와 충분히 중첩되도록 형성하므로써 소자의 전기적 특성이 향상될 수 있도록 한 반도체 소자의 트랜지스터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor of a semiconductor device. In order to prevent deterioration of a device due to a hot carrier effect, the junction region is formed to sufficiently overlap both sides of the gate electrode, thereby improving the electrical characteristics of the device. A method for manufacturing a transistor of a semiconductor device.

Description

반도체 소자의 트랜지스터 제조방법Transistor manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A 내지 제1E도는 본 발명에 따른 반도체 소자의 트랜지스터 제조방법을 설명하기 위한 소자의 단면도.1A to 1E are cross-sectional views of a device for explaining a transistor manufacturing method of a semiconductor device according to the present invention.

Claims (1)

반도체 소자의 트랜지스터 제조방법에 있어서, 실리콘기판에 N형의 불순물이온을 주입하여 소정 두께의 불순물층을 형성하는 단계와, 상기 단계로부터 전체 상부면에 산화막을 형성한 후 게이트전극이 형성될 부분의 상기 실리콘기판이 노출되도록 상기 산화막을 패터닝하는 단계와, 상기 단계로부터 노출된 실리콘기판상에 게이트산화막을 형성한 후 전체 상부면에 폴리실리콘층을 형성하고 상기 폴리실리콘층에 불순물이온을 주입하는 단계와, 상기 단계로부터 상기 산화막이 노출되는 시점까지 상기 폴리실리콘층을 전면식각하여 요(凹)형이 게이트전극을 형성하는 단계와, 상기 단계로부터 상기 게이트전극 양측부에 스페이서모양으로 잔류하는 폴리실리콘층 하부의 상기 불순물층의 불순물 농도를 감소시켜 LDD영역을 형성하는 동시에 채널이 형성될 부분의 실리콘기판에 채널 도핑이 이루어지도록 상기 게이트전극의 두께 및 이온 주입 에너지를 조절하여 P형의 불순물이온을 주입하는 단계와, 상기 단계로부터 요(凹)형이 게이트전극 내부가 매립되도록 금속을 중착하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.A method of manufacturing a transistor of a semiconductor device, comprising: forming an impurity layer having a predetermined thickness by implanting an N-type impurity ion into a silicon substrate; and forming an oxide film on the entire upper surface from the step, and then forming a gate electrode. Patterning the oxide film to expose the silicon substrate; forming a gate oxide film on the silicon substrate exposed from the step; forming a polysilicon layer on the entire upper surface; and implanting impurity ions into the polysilicon layer. Forming a gate electrode by etching the polysilicon layer from the step to the time when the oxide film is exposed, and forming a gate electrode on the both sides of the gate electrode from the step; An impurity concentration of the impurity layer under the layer is reduced to form an LDD region and at the same time a channel is Implanting P-type impurity ions by adjusting the thickness and ion implantation energy of the gate electrode so that channel doping is performed on the silicon substrate of the portion to be formed; Transistor manufacturing method of a semiconductor device, characterized in that it comprises the step of neutralizing. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950020973A 1995-07-18 1995-07-18 Transistor manufacturing method of semiconductor device KR970008586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950020973A KR970008586A (en) 1995-07-18 1995-07-18 Transistor manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950020973A KR970008586A (en) 1995-07-18 1995-07-18 Transistor manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970008586A true KR970008586A (en) 1997-02-24

Family

ID=66526337

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950020973A KR970008586A (en) 1995-07-18 1995-07-18 Transistor manufacturing method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970008586A (en)

Similar Documents

Publication Publication Date Title
EP0978141A1 (en) Method of making nmos and pmos devices with reduced masking steps
EP0938752A1 (en) Asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
KR950025920A (en) Semiconductor device manufacturing method
KR960035908A (en) Manufacturing method of MOS field effect transistor
KR950008257B1 (en) Mos fet and its making method
KR970052131A (en) Method of manufacturing semiconductor memory device using cell plug ion implantation
JP3049496B2 (en) Method of manufacturing MOSFET
KR970053502A (en) Semiconductor device and manufacturing method thereof
KR970023872A (en) Method of manufacturing MOS transistor
JPH0338839A (en) Manufacture of semiconductor device
KR970008586A (en) Transistor manufacturing method of semiconductor device
US6096588A (en) Method of making transistor with selectively doped channel region for threshold voltage control
KR970053039A (en) Semiconductor device and its manufacturing method
KR970018259A (en) Transistor manufacturing method of semiconductor device
KR19990025085A (en) Transistor Manufacturing Method
KR0167606B1 (en) Process of fabricating mos-transistor
KR960043050A (en) Transistor manufacturing method of semiconductor device
US6207520B1 (en) Rapid thermal anneal with a gaseous dopant species for formation of lightly doped regions
KR100334968B1 (en) Method for fabricating buried channel type PMOS transistor
KR960042940A (en) Impurity Junction Formation Method
KR950012646A (en) Manufacturing method of transistor
KR100248807B1 (en) Field effect transistor and method for manufacturing the same
KR100223994B1 (en) N type field effect metal oxide semiconductor device and manufacturing thereof
JPH03120836A (en) Semiconductor device
KR960009216A (en) Semiconductor device and manufacturing method

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination