KR960009066A - Transistor manufacturing method of semiconductor device - Google Patents
Transistor manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR960009066A KR960009066A KR1019940019608A KR19940019608A KR960009066A KR 960009066 A KR960009066 A KR 960009066A KR 1019940019608 A KR1019940019608 A KR 1019940019608A KR 19940019608 A KR19940019608 A KR 19940019608A KR 960009066 A KR960009066 A KR 960009066A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- semiconductor device
- concentration impurity
- gate electrode
- transistor
- Prior art date
Links
Abstract
본 발명은 반도체 소자의 트랜지스터 제조방법에 관한 것으로, 소자의 크기 감소로 인한 단 채널 효과 및 소오스/드레인 영역에서의 측면 확산으로 인한 펀치 쓰루우 현상의 발생을 방지하기 위하여 실리콘 기판의 게이트(Gate) 전극이 형성될 부분에 LOCOS 산화막을 형성한 후 저농도 불순물영역을 형성하고 상기 LOCOS산화막을 제거한 다음 리세스(Recess) 구조의 게이트 전극을 형성하여 소오스(Source) 및 드레인(Drain) 영역을 게이트 전극보다 높게 형성시키므로써 소자의 전기적 특성을 향상시킬 수 있도록 한 반도체 소자의 트랜지스터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a transistor of a semiconductor device, and in order to prevent the occurrence of a punch through phenomenon due to short channel effects and side diffusion in a source / drain region due to a reduction in the size of the device, a gate of a silicon substrate. After forming the LOCOS oxide film on the part where the electrode is to be formed, a low concentration impurity region is formed, the LOCOS oxide film is removed, and a gate electrode having a recess structure is formed so that the source and drain regions are formed more than the gate electrode. The present invention relates to a method for manufacturing a transistor of a semiconductor device that can be formed to increase the electrical characteristics of the device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1a 내지 제1f도는 본 발명에 따른 반도체 소자의 트랜지스터 제조방법을 설명하기 위한 소자의 단면도.1A to 1F are cross-sectional views of a device for explaining a transistor manufacturing method of a semiconductor device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940019608A KR960009066A (en) | 1994-08-09 | 1994-08-09 | Transistor manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940019608A KR960009066A (en) | 1994-08-09 | 1994-08-09 | Transistor manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960009066A true KR960009066A (en) | 1996-03-22 |
Family
ID=66697764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940019608A KR960009066A (en) | 1994-08-09 | 1994-08-09 | Transistor manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960009066A (en) |
-
1994
- 1994-08-09 KR KR1019940019608A patent/KR960009066A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |