US3656454A
(en)
|
1970-11-23 |
1972-04-18 |
Air Reduction |
Vacuum coating apparatus
|
NL7103019A
(zh)
|
1971-03-06 |
1972-09-08 |
|
|
US3783822A
(en)
|
1972-05-10 |
1974-01-08 |
J Wollam |
Apparatus for use in deposition of films from a vapor phase
|
NL7209297A
(zh)
|
1972-07-01 |
1974-01-03 |
|
|
JPS5724199B2
(zh)
|
1974-03-12 |
1982-05-22 |
|
|
JPS51144183A
(en)
|
1975-06-06 |
1976-12-10 |
Hitachi Ltd |
Semiconductor element containing surface protection film
|
JPS5942970B2
(ja)
|
1979-03-29 |
1984-10-18 |
テルサ−ムコ株式会社 |
半導体熱処理用反応管
|
DE3020264A1
(de)
|
1980-05-28 |
1981-12-03 |
Siemens AG, 1000 Berlin und 8000 München |
Dichter, gekuehlter verschluss fuer prozessrohre, insbesondere in der halbleiterfertigung
|
US4369031A
(en)
|
1981-09-15 |
1983-01-18 |
Thermco Products Corporation |
Gas control system for chemical vapor deposition system
|
JPS58128724A
(ja)
|
1982-01-27 |
1983-08-01 |
Hitachi Ltd |
ウエハ反転装置
|
US5242501A
(en)
|
1982-09-10 |
1993-09-07 |
Lam Research Corporation |
Susceptor in chemical vapor deposition reactors
|
US4565157A
(en)
|
1983-03-29 |
1986-01-21 |
Genus, Inc. |
Method and apparatus for deposition of tungsten silicides
|
JPS59220917A
(ja)
*
|
1983-05-31 |
1984-12-12 |
Toshiba Corp |
半導体製造装置
|
US4539933A
(en)
|
1983-08-31 |
1985-09-10 |
Anicon, Inc. |
Chemical vapor deposition apparatus
|
JPS60178616A
(ja)
|
1984-02-27 |
1985-09-12 |
Hitachi Ltd |
分子線エピタキシ装置の試料回転ホルダ
|
DE3421538A1
(de)
|
1984-06-08 |
1985-12-12 |
ATOMIKA Technische Physik GmbH, 8000 München |
Vakuumaufdampfeinrichtung
|
US4560420A
(en)
|
1984-06-13 |
1985-12-24 |
At&T Technologies, Inc. |
Method for reducing temperature variations across a semiconductor wafer during heating
|
CA1251100A
(en)
|
1985-05-17 |
1989-03-14 |
Richard Cloutier |
Chemical vapor deposition
|
US4658513A
(en)
|
1985-09-03 |
1987-04-21 |
Dynapert-Htc Corporation |
Continuous vapor phase processing machine
|
JPH0680633B2
(ja)
|
1985-09-04 |
1994-10-12 |
富士通株式会社 |
気相成長装置
|
US4736705A
(en)
|
1986-07-14 |
1988-04-12 |
The United States Of America As Represented By The Secretary Of The Air Force |
Apparatus for metal organic chemical vapor deposition
|
US4859832A
(en)
|
1986-09-08 |
1989-08-22 |
Nikon Corporation |
Light radiation apparatus
|
JPS63186422A
(ja)
|
1987-01-28 |
1988-08-02 |
Tadahiro Omi |
ウエハサセプタ装置
|
JPS63226025A
(ja)
*
|
1987-03-13 |
1988-09-20 |
Sumitomo Metal Ind Ltd |
基板の表面処理方法
|
US5040484A
(en)
|
1987-05-04 |
1991-08-20 |
Varian Associates, Inc. |
Apparatus for retaining wafers
|
US5061084A
(en)
|
1988-04-27 |
1991-10-29 |
Ag Processing Technologies, Inc. |
Pyrometer apparatus and method
|
US4919542A
(en)
|
1988-04-27 |
1990-04-24 |
Ag Processing Technologies, Inc. |
Emissivity correction apparatus and method
|
US4986215A
(en)
|
1988-09-01 |
1991-01-22 |
Kyushu Electronic Metal Co., Ltd. |
Susceptor for vapor-phase growth system
|
US4956538A
(en)
|
1988-09-09 |
1990-09-11 |
Texas Instruments, Incorporated |
Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
|
JPH0834187B2
(ja)
|
1989-01-13 |
1996-03-29 |
東芝セラミックス株式会社 |
サセプタ
|
JP2767282B2
(ja)
|
1989-05-30 |
1998-06-18 |
日本真空技術株式会社 |
基板保持装置
|
US5046909A
(en)
|
1989-06-29 |
1991-09-10 |
Applied Materials, Inc. |
Method and apparatus for handling semiconductor wafers
|
US5119540A
(en)
|
1990-07-24 |
1992-06-09 |
Cree Research, Inc. |
Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
|
JPH0687463B2
(ja)
|
1989-08-24 |
1994-11-02 |
株式会社東芝 |
半導体気相成長装置
|
JPH03136232A
(ja)
|
1989-08-31 |
1991-06-11 |
Dainippon Screen Mfg Co Ltd |
基板の表面処理装置
|
EP0448346B1
(en)
|
1990-03-19 |
1997-07-09 |
Kabushiki Kaisha Toshiba |
Vapor-phase deposition apparatus
|
US5271084A
(en)
|
1990-05-23 |
1993-12-14 |
Interuniversitair Micro Elektronica Centrum Vzw |
Method and device for measuring temperature radiation using a pyrometer wherein compensation lamps are used
|
JPH04110466A
(ja)
|
1990-08-31 |
1992-04-10 |
Oki Electric Ind Co Ltd |
ウエハホルダー
|
JPH04157162A
(ja)
|
1990-10-22 |
1992-05-29 |
Shinko Electric Co Ltd |
表面処理装置
|
JPH04171944A
(ja)
|
1990-11-06 |
1992-06-19 |
Fujitsu Ltd |
気相エピタキシャル成長装置
|
US5114242A
(en)
|
1990-12-07 |
1992-05-19 |
Ag Processing Technologies, Inc. |
Bichannel radiation detection method
|
US5173336A
(en)
|
1991-01-22 |
1992-12-22 |
Santa Barbara Research Center |
Metal organic chemical vapor deposition (MOCVD) reactor with recirculation suppressing flow guide
|
JP3106172B2
(ja)
|
1991-02-26 |
2000-11-06 |
東京エレクトロン株式会社 |
熱処理装置の封止構造
|
US5324386A
(en)
|
1991-03-19 |
1994-06-28 |
Fujitsu Limited |
Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor
|
US5155652A
(en)
|
1991-05-02 |
1992-10-13 |
International Business Machines Corporation |
Temperature cycling ceramic electrostatic chuck
|
JP2677913B2
(ja)
|
1991-05-13 |
1997-11-17 |
三菱電機株式会社 |
半導体製造装置のシール機構および半導体装置の製造方法
|
US5154730A
(en)
|
1991-05-17 |
1992-10-13 |
Materials Research Corporation |
Semiconductor wafer processing module having an inclined rotating wafer handling turret and a method of using the module
|
US5156461A
(en)
|
1991-05-17 |
1992-10-20 |
Texas Instruments Incorporated |
Multi-point pyrometry with real-time surface emissivity compensation
|
US5436172A
(en)
|
1991-05-20 |
1995-07-25 |
Texas Instruments Incorporated |
Real-time multi-zone semiconductor wafer temperature and process uniformity control system
|
JPH0751755B2
(ja)
|
1991-06-21 |
1995-06-05 |
川崎製鉄株式会社 |
プラズマcvd装置
|
US5291514A
(en)
|
1991-07-15 |
1994-03-01 |
International Business Machines Corporation |
Heater autotone control apparatus and method
|
US5536918A
(en)
|
1991-08-16 |
1996-07-16 |
Tokyo Electron Sagami Kabushiki Kaisha |
Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
|
US5294778A
(en)
|
1991-09-11 |
1994-03-15 |
Lam Research Corporation |
CVD platen heater system utilizing concentric electric heating elements
|
US5446824A
(en)
|
1991-10-11 |
1995-08-29 |
Texas Instruments |
Lamp-heated chuck for uniform wafer processing
|
JPH05230673A
(ja)
|
1992-02-24 |
1993-09-07 |
Ulvac Seimaku Kk |
ドライエッチング装置
|
US5226383A
(en)
|
1992-03-12 |
1993-07-13 |
Bell Communications Research, Inc. |
Gas foil rotating substrate holder
|
US5473392A
(en)
|
1992-05-01 |
1995-12-05 |
Summit Technology, Inc. |
Method and system for topographic measurement
|
US5370739A
(en)
|
1992-06-15 |
1994-12-06 |
Materials Research Corporation |
Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
|
JP2766433B2
(ja)
|
1992-07-23 |
1998-06-18 |
株式会社東芝 |
半導体気相成長装置
|
JPH0770730A
(ja)
|
1993-09-06 |
1995-03-14 |
Hitachi Metals Ltd |
耐孔食性ステンレス鋼
|
US5444217A
(en)
|
1993-01-21 |
1995-08-22 |
Moore Epitaxial Inc. |
Rapid thermal processing apparatus for processing semiconductor wafers
|
US5820686A
(en)
|
1993-01-21 |
1998-10-13 |
Moore Epitaxial, Inc. |
Multi-layer susceptor for rapid thermal process reactors
|
NL9300389A
(nl)
|
1993-03-04 |
1994-10-03 |
Xycarb Bv |
Substraatdrager.
|
US5305417A
(en)
|
1993-03-26 |
1994-04-19 |
Texas Instruments Incorporated |
Apparatus and method for determining wafer temperature using pyrometry
|
US5305416A
(en)
|
1993-04-02 |
1994-04-19 |
At&T Bell Laboratories |
Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies
|
US5624590A
(en)
|
1993-04-02 |
1997-04-29 |
Lucent Technologies, Inc. |
Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique
|
JPH06295915A
(ja)
|
1993-04-09 |
1994-10-21 |
F T L:Kk |
半導体装置の製造装置及び半導体装置の製造方法
|
JP3190165B2
(ja)
|
1993-04-13 |
2001-07-23 |
東京エレクトロン株式会社 |
縦型熱処理装置及び熱処理方法
|
JPH06310438A
(ja)
|
1993-04-22 |
1994-11-04 |
Mitsubishi Electric Corp |
化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
|
JPH0711446A
(ja)
|
1993-05-27 |
1995-01-13 |
Applied Materials Inc |
気相成長用サセプタ装置
|
EP0628644B1
(en)
|
1993-05-27 |
2003-04-02 |
Applied Materials, Inc. |
Improvements in or relating to susceptors suitable for use in chemical vapour deposition devices
|
US5372652A
(en)
|
1993-06-14 |
1994-12-13 |
International Business Machines Corporation |
Aerosol cleaning method
|
US5384008A
(en)
|
1993-06-18 |
1995-01-24 |
Applied Materials, Inc. |
Process and apparatus for full wafer deposition
|
US5497727A
(en)
|
1993-09-07 |
1996-03-12 |
Lsi Logic Corporation |
Cooling element for a semiconductor fabrication chamber
|
US5650082A
(en)
|
1993-10-29 |
1997-07-22 |
Applied Materials, Inc. |
Profiled substrate heating
|
US5393232A
(en)
|
1993-11-15 |
1995-02-28 |
Haines; William C. |
Visual aid system
|
US5444815A
(en)
|
1993-12-16 |
1995-08-22 |
Texas Instruments Incorporated |
Multi-zone lamp interference correction system
|
JP2642858B2
(ja)
|
1993-12-20 |
1997-08-20 |
日本碍子株式会社 |
セラミックスヒーター及び加熱装置
|
US5645646A
(en)
|
1994-02-25 |
1997-07-08 |
Applied Materials, Inc. |
Susceptor for deposition apparatus
|
GB9410567D0
(en)
|
1994-05-26 |
1994-07-13 |
Philips Electronics Uk Ltd |
Plasma treatment and apparatus in electronic device manufacture
|
EP0689233B1
(en)
|
1994-06-24 |
2008-10-15 |
Sumitomo Electric Industries, Limited |
Wafer and method of producing same
|
JPH0878347A
(ja)
*
|
1994-09-06 |
1996-03-22 |
Komatsu Electron Metals Co Ltd |
エピタキシャル成長装置のサセプタ
|
US5855677A
(en)
|
1994-09-30 |
1999-01-05 |
Applied Materials, Inc. |
Method and apparatus for controlling the temperature of reaction chamber walls
|
US5514439A
(en)
|
1994-10-14 |
1996-05-07 |
Sibley; Thomas |
Wafer support fixtures for rapid thermal processing
|
KR100370728B1
(ko)
|
1994-10-27 |
2003-04-07 |
실리콘 밸리 그룹, 인크. |
기판을균일하게코팅하는방법및장치
|
US7018943B2
(en)
|
1994-10-27 |
2006-03-28 |
Asml Holding N.V. |
Method of uniformly coating a substrate
|
US5551983A
(en)
|
1994-11-01 |
1996-09-03 |
Celestech, Inc. |
Method and apparatus for depositing a substance with temperature control
|
US5928427A
(en)
|
1994-12-16 |
1999-07-27 |
Hwang; Chul-Ju |
Apparatus for low pressure chemical vapor deposition
|
US5755511A
(en)
|
1994-12-19 |
1998-05-26 |
Applied Materials, Inc. |
Method and apparatus for measuring substrate temperatures
|
US5660472A
(en)
|
1994-12-19 |
1997-08-26 |
Applied Materials, Inc. |
Method and apparatus for measuring substrate temperatures
|
JP2912842B2
(ja)
|
1995-01-17 |
1999-06-28 |
株式会社エイコー・エンジニアリング |
薄膜形成装置
|
US5982986A
(en)
|
1995-02-03 |
1999-11-09 |
Applied Materials, Inc. |
Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
|
JP3553204B2
(ja)
|
1995-04-28 |
2004-08-11 |
アネルバ株式会社 |
Cvd装置
|
JPH0936049A
(ja)
|
1995-07-21 |
1997-02-07 |
Mitsubishi Electric Corp |
気相成長装置およびこれによって製造された化合物半導体装置
|
JPH0945624A
(ja)
|
1995-07-27 |
1997-02-14 |
Tokyo Electron Ltd |
枚葉式の熱処理装置
|
US6086680A
(en)
|
1995-08-22 |
2000-07-11 |
Asm America, Inc. |
Low-mass susceptor
|
JPH09134880A
(ja)
|
1995-11-09 |
1997-05-20 |
Fujitsu Ltd |
半導体装置の製造装置
|
US5584936A
(en)
|
1995-12-14 |
1996-12-17 |
Cvd, Incorporated |
Susceptor for semiconductor wafer processing
|
US5881208A
(en)
|
1995-12-20 |
1999-03-09 |
Sematech, Inc. |
Heater and temperature sensor array for rapid thermal processing thermal core
|
US5854468A
(en)
|
1996-01-25 |
1998-12-29 |
Brooks Automation, Inc. |
Substrate heating apparatus with cantilevered lifting arm
|
KR100443415B1
(ko)
|
1996-02-23 |
2004-11-03 |
동경 엘렉트론 주식회사 |
열처리장치
|
FR2746115B1
(fr)
|
1996-03-15 |
1998-05-22 |
|
Support de substrats pour installation d'evaporation
|
JP3563224B2
(ja)
|
1996-03-25 |
2004-09-08 |
住友電気工業株式会社 |
半導体ウエハの評価方法、熱処理方法、および熱処理装置
|
US5761023A
(en)
|
1996-04-25 |
1998-06-02 |
Applied Materials, Inc. |
Substrate support with pressure zones having reduced contact area and temperature feedback
|
US5843234A
(en)
|
1996-05-10 |
1998-12-01 |
Memc Electronic Materials, Inc. |
Method and apparatus for aiming a barrel reactor nozzle
|
KR100200705B1
(ko)
|
1996-06-08 |
1999-06-15 |
윤종용 |
반도체 디바이스 제조장치, 제조장치의 공정 조건 조절방법 및 이를 이용한 커패시터 제조방법
|
US6001183A
(en)
|
1996-06-10 |
1999-12-14 |
Emcore Corporation |
Wafer carriers for epitaxial growth processes
|
US5788799A
(en)
|
1996-06-11 |
1998-08-04 |
Applied Materials, Inc. |
Apparatus and method for cleaning of semiconductor process chamber surfaces
|
US5837058A
(en)
|
1996-07-12 |
1998-11-17 |
Applied Materials, Inc. |
High temperature susceptor
|
US5980706A
(en)
|
1996-07-15 |
1999-11-09 |
Semitool, Inc. |
Electrode semiconductor workpiece holder
|
JP3596710B2
(ja)
*
|
1996-09-10 |
2004-12-02 |
信越半導体株式会社 |
気相成長装置用サセプタ
|
JP3923576B2
(ja)
|
1996-12-13 |
2007-06-06 |
東洋炭素株式会社 |
気相成長用サセプター
|
JP3887052B2
(ja)
|
1996-12-13 |
2007-02-28 |
東洋炭素株式会社 |
気相成長用サセプター
|
US5895596A
(en)
|
1997-01-27 |
1999-04-20 |
Semitool Thermal |
Model based temperature controller for semiconductor thermal processors
|
ATE273586T1
(de)
|
1997-03-04 |
2004-08-15 |
Qualcomm Inc |
Mehrbenutzernachrichtenübertragungssystemarchit ktr mit verteilten sendern
|
US6432203B1
(en)
|
1997-03-17 |
2002-08-13 |
Applied Komatsu Technology, Inc. |
Heated and cooled vacuum chamber shield
|
US5888303A
(en)
|
1997-04-07 |
1999-03-30 |
R.E. Dixon Inc. |
Gas inlet apparatus and method for chemical vapor deposition reactors
|
US5874711A
(en)
|
1997-04-17 |
1999-02-23 |
Ag Associates |
Apparatus and method for determining the temperature of a radiating surface
|
EP0987700B1
(en)
|
1997-05-08 |
2004-08-25 |
Matsushita Electric Industrial Co., Ltd. |
Device and method for manufacturing an optical recording medium
|
JPH1167675A
(ja)
|
1997-08-21 |
1999-03-09 |
Toshiba Ceramics Co Ltd |
高速回転気相薄膜形成装置及びそれを用いる高速回転気相薄膜形成方法
|
EP0948806A2
(en)
|
1997-10-03 |
1999-10-13 |
Koninklijke Philips Electronics N.V. |
Holder for a semiconductor substrate, and method of manufacturing a semiconductor device using such a holder
|
KR100660416B1
(ko)
|
1997-11-03 |
2006-12-22 |
에이에스엠 아메리카, 인코포레이티드 |
개량된 저질량 웨이퍼 지지 시스템
|
JP3728078B2
(ja)
|
1997-11-28 |
2005-12-21 |
京セラ株式会社 |
プラズマ発生用部材
|
US5909355A
(en)
|
1997-12-02 |
1999-06-01 |
Applied Materials, Inc. |
Ceramic electrostatic chuck and method of fabricating same
|
KR20010071235A
(ko)
|
1998-05-11 |
2001-07-28 |
세미툴 인코포레이티드 |
열반응기용 온도 제어 시스템
|
US5930456A
(en)
|
1998-05-14 |
1999-07-27 |
Ag Associates |
Heating device for semiconductor wafers
|
US6086362A
(en)
|
1998-05-20 |
2000-07-11 |
Applied Komatsu Technology, Inc. |
Multi-function chamber for a substrate processing system
|
US6146646A
(en)
|
1998-05-28 |
2000-11-14 |
Yusuf; Fatimat |
Kokori fruit-based cosmetic system
|
US6192827B1
(en)
|
1998-07-03 |
2001-02-27 |
Applied Materials, Inc. |
Double slit-valve doors for plasma processing
|
US6225601B1
(en)
|
1998-07-13 |
2001-05-01 |
Applied Komatsu Technology, Inc. |
Heating a substrate support in a substrate handling chamber
|
US6669988B2
(en)
|
2001-08-20 |
2003-12-30 |
Goodrich Corporation |
Hardware assembly for CVI/CVD processes
|
US6280581B1
(en)
|
1998-12-29 |
2001-08-28 |
David Cheng |
Method and apparatus for electroplating films on semiconductor wafers
|
US6924884B2
(en)
|
1999-03-08 |
2005-08-02 |
Asml Netherlands B.V. |
Off-axis leveling in lithographic projection apparatus
|
US6480286B1
(en)
|
1999-03-31 |
2002-11-12 |
Matsushita Electric Inudstrial Co., Ltd. |
Method and apparatus for measuring thickness variation of a thin sheet material, and probe reflector used in the apparatus
|
US6812157B1
(en)
|
1999-06-24 |
2004-11-02 |
Prasad Narhar Gadgil |
Apparatus for atomic layer chemical vapor deposition
|
AU6491600A
(en)
|
1999-07-26 |
2001-02-13 |
Emcore Corporation |
Apparatus for growing epitaxial layers on wafers
|
US6474987B1
(en)
|
1999-09-03 |
2002-11-05 |
Mitsubishi Materials Silicon Corporation |
Wafer holder
|
US6511539B1
(en)
|
1999-09-08 |
2003-01-28 |
Asm America, Inc. |
Apparatus and method for growth of a thin film
|
US6287385B1
(en)
|
1999-10-29 |
2001-09-11 |
The Boc Group, Inc. |
Spring clip for sensitive substrates
|
US6259072B1
(en)
|
1999-11-09 |
2001-07-10 |
Axcelis Technologies, Inc. |
Zone controlled radiant heating system utilizing focused reflector
|
JP2002057207A
(ja)
|
2000-01-20 |
2002-02-22 |
Sumitomo Electric Ind Ltd |
半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置
|
US20020069970A1
(en)
|
2000-03-07 |
2002-06-13 |
Applied Materials, Inc. |
Temperature controlled semiconductor processing chamber liner
|
US20020170673A1
(en)
|
2000-04-29 |
2002-11-21 |
Tanguay Michael J. |
System and method of processing composite substrates within a high throughput reactor
|
US6444027B1
(en)
|
2000-05-08 |
2002-09-03 |
Memc Electronic Materials, Inc. |
Modified susceptor for use in chemical vapor deposition process
|
US6495010B2
(en)
|
2000-07-10 |
2002-12-17 |
Unaxis Usa, Inc. |
Differentially-pumped material processing system
|
US6669824B2
(en)
|
2000-07-10 |
2003-12-30 |
Unaxis Usa, Inc. |
Dual-scan thin film processing system
|
US6492625B1
(en)
|
2000-09-27 |
2002-12-10 |
Emcore Corporation |
Apparatus and method for controlling temperature uniformity of substrates
|
JP4537566B2
(ja)
|
2000-12-07 |
2010-09-01 |
大陽日酸株式会社 |
基板回転機構を備えた成膜装置
|
US6800173B2
(en)
|
2000-12-15 |
2004-10-05 |
Novellus Systems, Inc. |
Variable gas conductance control for a process chamber
|
US6634882B2
(en)
|
2000-12-22 |
2003-10-21 |
Asm America, Inc. |
Susceptor pocket profile to improve process performance
|
US6506252B2
(en)
|
2001-02-07 |
2003-01-14 |
Emcore Corporation |
Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
|
US6860945B2
(en)
|
2001-03-22 |
2005-03-01 |
Tokyo Electron Limited |
Substrate coating unit and substrate coating method
|
JP3898906B2
(ja)
|
2001-05-22 |
2007-03-28 |
東京エレクトロン株式会社 |
基板の塗布装置
|
US6442950B1
(en)
|
2001-05-23 |
2002-09-03 |
Macronix International Co., Ltd. |
Cooling system of chamber with removable liner
|
US6902623B2
(en)
|
2001-06-07 |
2005-06-07 |
Veeco Instruments Inc. |
Reactor having a movable shutter
|
JP2003031474A
(ja)
|
2001-07-16 |
2003-01-31 |
Oki Electric Ind Co Ltd |
露光装置および露光方法
|
KR100488753B1
(ko)
|
2001-07-23 |
2005-05-11 |
다이닛뽕스크린 세이조오 가부시키가이샤 |
기판처리방법 및 그 장치
|
US7106490B2
(en)
|
2001-12-14 |
2006-09-12 |
Micronic Laser Systems Ab |
Methods and systems for improved boundary contrast
|
US20030114016A1
(en)
*
|
2001-12-18 |
2003-06-19 |
Tischler Michael A. |
Wafer carrier for semiconductor process tool
|
US7122844B2
(en)
|
2002-05-13 |
2006-10-17 |
Cree, Inc. |
Susceptor for MOCVD reactor
|
US6900877B2
(en)
*
|
2002-06-12 |
2005-05-31 |
Asm American, Inc. |
Semiconductor wafer position shift measurement and correction
|
JP4005879B2
(ja)
|
2002-08-30 |
2007-11-14 |
株式会社東芝 |
現像方法、基板処理方法、及び基板処理装置
|
JP2004128271A
(ja)
|
2002-10-03 |
2004-04-22 |
Toyo Tanso Kk |
サセプタ
|
US6818094B2
(en)
|
2003-01-29 |
2004-11-16 |
Applied Materials, Inc. |
Reciprocating gas valve for pulsing a gas
|
US8366830B2
(en)
|
2003-03-04 |
2013-02-05 |
Cree, Inc. |
Susceptor apparatus for inverted type MOCVD reactor
|
US7019826B2
(en)
|
2003-03-20 |
2006-03-28 |
Agilent Technologies, Inc. |
Optical inspection system, apparatus and method for reconstructing three-dimensional images for printed circuit board and electronics manufacturing inspection
|
JP5404984B2
(ja)
|
2003-04-24 |
2014-02-05 |
東京エレクトロン株式会社 |
プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置
|
KR101006800B1
(ko)
|
2003-06-06 |
2011-01-10 |
도쿄엘렉트론가부시키가이샤 |
기판의 처리막의 표면 거침을 개선하는 방법 및 기판 처리장치
|
US20040263862A1
(en)
|
2003-06-24 |
2004-12-30 |
Amparan Alfonso Benjamin |
Detecting peripheral points of reflected radiation beam spots for topographically mapping a surface
|
JP4008401B2
(ja)
|
2003-09-22 |
2007-11-14 |
日本碍子株式会社 |
基板載置台の製造方法
|
US8158532B2
(en)
|
2003-10-20 |
2012-04-17 |
Novellus Systems, Inc. |
Topography reduction and control by selective accelerator removal
|
KR100574569B1
(ko)
|
2004-04-30 |
2006-05-03 |
주성엔지니어링(주) |
박막 증착방법 및 분리된 퍼지가스 분사구를 구비하는박막 증착장치
|
JP2006013020A
(ja)
*
|
2004-06-24 |
2006-01-12 |
Toyo Tanso Kk |
サセプタ
|
US7544251B2
(en)
|
2004-10-07 |
2009-06-09 |
Applied Materials, Inc. |
Method and apparatus for controlling temperature of a substrate
|
JP4410076B2
(ja)
|
2004-10-07 |
2010-02-03 |
東京エレクトロン株式会社 |
現像処理装置
|
US7396412B2
(en)
|
2004-12-22 |
2008-07-08 |
Sokudo Co., Ltd. |
Coat/develop module with shared dispense
|
JP4871264B2
(ja)
*
|
2005-03-17 |
2012-02-08 |
浜松ホトニクス株式会社 |
顕微鏡画像撮像装置
|
US7770535B2
(en)
|
2005-06-10 |
2010-08-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Chemical solution application apparatus and chemical solution application method
|
KR100735613B1
(ko)
|
2006-01-11 |
2007-07-04 |
삼성전자주식회사 |
이온주입설비의 디스크 어셈블리
|
US8603248B2
(en)
|
2006-02-10 |
2013-12-10 |
Veeco Instruments Inc. |
System and method for varying wafer surface temperature via wafer-carrier temperature offset
|
US8021484B2
(en)
*
|
2006-03-30 |
2011-09-20 |
Sumco Techxiv Corporation |
Method of manufacturing epitaxial silicon wafer and apparatus therefor
|
JP4868522B2
(ja)
*
|
2006-03-30 |
2012-02-01 |
Sumco Techxiv株式会社 |
エピタキシャルウェーハの製造方法及び製造装置
|
US20070284342A1
(en)
|
2006-06-09 |
2007-12-13 |
Morten Jorgensen |
Plasma treatment method and apparatus
|
US11136667B2
(en)
|
2007-01-08 |
2021-10-05 |
Eastman Kodak Company |
Deposition system and method using a delivery head separated from a substrate by gas pressure
|
US7789961B2
(en)
|
2007-01-08 |
2010-09-07 |
Eastman Kodak Company |
Delivery device comprising gas diffuser for thin film deposition
|
DE102007026348A1
(de)
|
2007-06-06 |
2008-12-11 |
Aixtron Ag |
Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
|
US8092599B2
(en)
|
2007-07-10 |
2012-01-10 |
Veeco Instruments Inc. |
Movable injectors in rotating disc gas reactors
|
US8039052B2
(en)
|
2007-09-06 |
2011-10-18 |
Intermolecular, Inc. |
Multi-region processing system and heads
|
US7572686B2
(en)
|
2007-09-26 |
2009-08-11 |
Eastman Kodak Company |
System for thin film deposition utilizing compensating forces
|
US8211231B2
(en)
|
2007-09-26 |
2012-07-03 |
Eastman Kodak Company |
Delivery device for deposition
|
US8021487B2
(en)
|
2007-12-12 |
2011-09-20 |
Veeco Instruments Inc. |
Wafer carrier with hub
|
US20110114022A1
(en)
|
2007-12-12 |
2011-05-19 |
Veeco Instruments Inc. |
Wafer carrier with hub
|
TW200952115A
(en)
|
2008-06-13 |
2009-12-16 |
Huga Optotech Inc |
Wafer carrier and epitaxy machine using the same
|
JP2010027881A
(ja)
*
|
2008-07-22 |
2010-02-04 |
Sumco Corp |
エピタキシャルウェーハの製造方法。
|
EP2338164A4
(en)
|
2008-08-29 |
2012-05-16 |
Veeco Instr Inc |
VARIABLE THERMAL RESISTANCE PLATE HOLDER
|
JP5280964B2
(ja)
|
2008-09-04 |
2013-09-04 |
東京エレクトロン株式会社 |
成膜装置、基板処理装置、成膜方法及び記憶媒体
|
JP5453768B2
(ja)
|
2008-11-05 |
2014-03-26 |
豊田合成株式会社 |
化合物半導体製造装置、化合物半導体の製造方法、および化合物半導体製造用治具
|
JP5141541B2
(ja)
|
2008-12-24 |
2013-02-13 |
株式会社Sumco |
エピタキシャルウェーハの製造方法
|
EP2403396B1
(en)
|
2009-03-04 |
2019-08-14 |
Elie Meimoun |
Wavefront analysis inspection apparatus and method
|
US8351024B2
(en)
|
2009-03-13 |
2013-01-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method involving a level sensor having a detection grating including three or more segments
|
US8311788B2
(en)
|
2009-07-01 |
2012-11-13 |
Schlumberger Technology Corporation |
Method to quantify discrete pore shapes, volumes, and surface areas using confocal profilometry
|
JP5233888B2
(ja)
|
2009-07-21 |
2013-07-10 |
信越半導体株式会社 |
両面研磨装置用キャリアの製造方法、両面研磨装置用キャリア及びウェーハの両面研磨方法
|
US20110049779A1
(en)
|
2009-08-28 |
2011-03-03 |
Applied Materials, Inc. |
Substrate carrier design for improved photoluminescence uniformity
|
JP2011165697A
(ja)
*
|
2010-02-04 |
2011-08-25 |
Bridgestone Corp |
気相成長装置
|
US9324590B2
(en)
|
2010-02-24 |
2016-04-26 |
Veeco Instruments Inc. |
Processing methods and apparatus with temperature distribution control
|
WO2011125471A1
(ja)
|
2010-03-31 |
2011-10-13 |
東京エレクトロン株式会社 |
プラズマ処理装置及びプラズマ処理方法
|
TWI390074B
(zh)
|
2010-04-29 |
2013-03-21 |
Chi Mei Lighting Tech Corp |
有機金屬化學氣相沉積機台
|
JP5523935B2
(ja)
|
2010-06-09 |
2014-06-18 |
株式会社神戸製鋼所 |
気化方法及びこれに用いられる気化装置並びに同装置を備えた気化システム
|
JP5707766B2
(ja)
|
2010-07-28 |
2015-04-30 |
住友電気工業株式会社 |
サセプタおよび半導体製造装置
|
US8535445B2
(en)
*
|
2010-08-13 |
2013-09-17 |
Veeco Instruments Inc. |
Enhanced wafer carrier
|
US20120073502A1
(en)
|
2010-09-27 |
2012-03-29 |
Veeco Instruments Inc. |
Heater with liquid heating element
|
US8562746B2
(en)
|
2010-12-15 |
2013-10-22 |
Veeco Instruments Inc. |
Sectional wafer carrier
|
KR20120071695A
(ko)
|
2010-12-23 |
2012-07-03 |
삼성엘이디 주식회사 |
화학 기상 증착 장치용 서셉터, 화학 기상 증착 장치 및 화학 기상 증착 장치를 이용한 기판의 가열 방법
|
US20120171377A1
(en)
|
2010-12-30 |
2012-07-05 |
Veeco Instruments Inc. |
Wafer carrier with selective control of emissivity
|
KR101685150B1
(ko)
|
2011-01-14 |
2016-12-09 |
주식회사 원익아이피에스 |
박막 증착 장치 및 이를 포함한 기판 처리 시스템
|
US8958061B2
(en)
|
2011-05-31 |
2015-02-17 |
Veeco Instruments Inc. |
Heated wafer carrier profiling
|
TW201316445A
(zh)
|
2011-09-01 |
2013-04-16 |
Veeco Instr Inc |
具有熱特性的晶圓承載物
|
WO2013033315A2
(en)
|
2011-09-01 |
2013-03-07 |
Veeco Instruments Inc. |
Wafer carrier with thermal features
|
DE102011083421A1
(de)
|
2011-09-26 |
2013-03-28 |
Siemens Aktiengesellschaft |
Verfahren und Vorrichtung zum Vermessen homogen reflektierender Oberflächen
|
JP5630414B2
(ja)
|
2011-10-04 |
2014-11-26 |
信越半導体株式会社 |
ウェーハの加工方法
|
US9816184B2
(en)
|
2012-03-20 |
2017-11-14 |
Veeco Instruments Inc. |
Keyed wafer carrier
|
US10316412B2
(en)
*
|
2012-04-18 |
2019-06-11 |
Veeco Instruments Inc. |
Wafter carrier for chemical vapor deposition systems
|
JP5794194B2
(ja)
*
|
2012-04-19 |
2015-10-14 |
東京エレクトロン株式会社 |
基板処理装置
|
JP6243898B2
(ja)
|
2012-04-19 |
2017-12-06 |
インテヴァック インコーポレイテッド |
太陽電池製造のための2重マスク装置
|
KR101992360B1
(ko)
|
2012-05-18 |
2019-06-24 |
엘지이노텍 주식회사 |
Cvd 반응기용 서셉터
|
US20140102372A1
(en)
*
|
2012-10-11 |
2014-04-17 |
Epistar Corporation |
Wafer carrier
|
JP6018909B2
(ja)
*
|
2012-12-27 |
2016-11-02 |
昭和電工株式会社 |
ウェハホルダーおよびエピタキシャルウェハの製造装置
|
US10167571B2
(en)
|
2013-03-15 |
2019-01-01 |
Veeco Instruments Inc. |
Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
|
WO2014196323A1
(ja)
*
|
2013-06-06 |
2014-12-11 |
イビデン株式会社 |
ウエハキャリアおよびこれを用いたエピタキシャル成長装置
|
US10145013B2
(en)
|
2014-01-27 |
2018-12-04 |
Veeco Instruments Inc. |
Wafer carrier having retention pockets with compound radii for chemical vapor desposition systems
|
US9627239B2
(en)
|
2015-05-29 |
2017-04-18 |
Veeco Instruments Inc. |
Wafer surface 3-D topography mapping based on in-situ tilt measurements in chemical vapor deposition systems
|