SG11201506364YA - Electrochemical deposition processes for semiconductor wafers - Google Patents

Electrochemical deposition processes for semiconductor wafers

Info

Publication number
SG11201506364YA
SG11201506364YA SG11201506364YA SG11201506364YA SG11201506364YA SG 11201506364Y A SG11201506364Y A SG 11201506364YA SG 11201506364Y A SG11201506364Y A SG 11201506364YA SG 11201506364Y A SG11201506364Y A SG 11201506364YA SG 11201506364Y A SG11201506364Y A SG 11201506364YA
Authority
SG
Singapore
Prior art keywords
semiconductor wafers
deposition processes
electrochemical deposition
electrochemical
processes
Prior art date
Application number
SG11201506364YA
Inventor
Daniel K Gebregziabiher
John Klocke
Charles Sharbono
Chandru Thambidurai
David J Erickson
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201506364YA publication Critical patent/SG11201506364YA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/12Process control or regulation
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18Electroplating using modulated, pulsed or reversing current
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
SG11201506364YA 2013-03-15 2014-02-11 Electrochemical deposition processes for semiconductor wafers SG11201506364YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/835,870 US20140262794A1 (en) 2013-03-15 2013-03-15 Electrochemical deposition processes for semiconductor wafers
PCT/US2014/015876 WO2014149245A1 (en) 2013-03-15 2014-02-11 Electrochemical deposition processes for semiconductor wafers

Publications (1)

Publication Number Publication Date
SG11201506364YA true SG11201506364YA (en) 2015-09-29

Family

ID=51522611

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201506364YA SG11201506364YA (en) 2013-03-15 2014-02-11 Electrochemical deposition processes for semiconductor wafers

Country Status (7)

Country Link
US (1) US20140262794A1 (en)
KR (1) KR20150132464A (en)
CN (1) CN105027265A (en)
DE (1) DE112014001428T5 (en)
SG (1) SG11201506364YA (en)
TW (1) TW201442149A (en)
WO (1) WO2014149245A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10154598B2 (en) * 2014-10-13 2018-12-11 Rohm And Haas Electronic Materials Llc Filling through-holes
CN107794553B (en) * 2017-10-27 2019-05-21 电子科技大学 A kind of electroplating additive and preparation method thereof
US10648097B2 (en) * 2018-03-30 2020-05-12 Lam Research Corporation Copper electrodeposition on cobalt lined features
JP7100571B2 (en) * 2018-12-13 2022-07-13 株式会社荏原製作所 A method of building a predictive model that predicts the number of plates that can be plated, a method of building a selection model for predicting the components that cause defects, and a method of predicting the number of boards that can be plated.
WO2021066412A1 (en) * 2019-09-30 2021-04-08 한국재료연구원 Method for measuring concentration of additive breakdown products included in plating solution
KR102223889B1 (en) * 2019-09-30 2021-03-09 한국재료연구원 Measuring device for concentration of additive breakdown product in plating solution
KR102445228B1 (en) * 2019-09-30 2022-09-21 한국재료연구원 Measuring method for concentration of additive breakdown product in plating solution

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100877923B1 (en) * 2001-06-07 2009-01-12 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 Electrolytic copper plating method
JP4434013B2 (en) * 2002-05-07 2010-03-17 ユニバーシティ オブ サザン カリフォルニア Method and apparatus for measuring the quality of a deposit during a plating process using conformable contact mask plating
US7291253B2 (en) * 2004-05-04 2007-11-06 Eci Technology, Inc. Detection of an unstable additive breakdown product in a plating bath
TWI328622B (en) * 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds
US20070261963A1 (en) * 2006-02-02 2007-11-15 Advanced Technology Materials, Inc. Simultaneous inorganic, organic and byproduct analysis in electrochemical deposition solutions
US8784636B2 (en) * 2007-12-04 2014-07-22 Ebara Corporation Plating apparatus and plating method
US7776741B2 (en) * 2008-08-18 2010-08-17 Novellus Systems, Inc. Process for through silicon via filing
TWI523976B (en) * 2010-05-19 2016-03-01 諾菲勒斯系統公司 Through silicon via filling using an electrolyte with a dual state inhibitor
US20120024713A1 (en) * 2010-07-29 2012-02-02 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) with heated substrate and cooled electrolyte

Also Published As

Publication number Publication date
WO2014149245A1 (en) 2014-09-25
US20140262794A1 (en) 2014-09-18
KR20150132464A (en) 2015-11-25
CN105027265A (en) 2015-11-04
TW201442149A (en) 2014-11-01
DE112014001428T5 (en) 2015-12-24

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