SG11201506364YA - Electrochemical deposition processes for semiconductor wafers - Google Patents
Electrochemical deposition processes for semiconductor wafersInfo
- Publication number
- SG11201506364YA SG11201506364YA SG11201506364YA SG11201506364YA SG11201506364YA SG 11201506364Y A SG11201506364Y A SG 11201506364YA SG 11201506364Y A SG11201506364Y A SG 11201506364YA SG 11201506364Y A SG11201506364Y A SG 11201506364YA SG 11201506364Y A SG11201506364Y A SG 11201506364YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafers
- deposition processes
- electrochemical deposition
- electrochemical
- processes
- Prior art date
Links
- 238000004070 electrodeposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/835,870 US20140262794A1 (en) | 2013-03-15 | 2013-03-15 | Electrochemical deposition processes for semiconductor wafers |
PCT/US2014/015876 WO2014149245A1 (en) | 2013-03-15 | 2014-02-11 | Electrochemical deposition processes for semiconductor wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201506364YA true SG11201506364YA (en) | 2015-09-29 |
Family
ID=51522611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201506364YA SG11201506364YA (en) | 2013-03-15 | 2014-02-11 | Electrochemical deposition processes for semiconductor wafers |
Country Status (7)
Country | Link |
---|---|
US (1) | US20140262794A1 (en) |
KR (1) | KR20150132464A (en) |
CN (1) | CN105027265A (en) |
DE (1) | DE112014001428T5 (en) |
SG (1) | SG11201506364YA (en) |
TW (1) | TW201442149A (en) |
WO (1) | WO2014149245A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10154598B2 (en) * | 2014-10-13 | 2018-12-11 | Rohm And Haas Electronic Materials Llc | Filling through-holes |
CN107794553B (en) * | 2017-10-27 | 2019-05-21 | 电子科技大学 | A kind of electroplating additive and preparation method thereof |
US10648097B2 (en) * | 2018-03-30 | 2020-05-12 | Lam Research Corporation | Copper electrodeposition on cobalt lined features |
JP7100571B2 (en) * | 2018-12-13 | 2022-07-13 | 株式会社荏原製作所 | A method of building a predictive model that predicts the number of plates that can be plated, a method of building a selection model for predicting the components that cause defects, and a method of predicting the number of boards that can be plated. |
WO2021066412A1 (en) * | 2019-09-30 | 2021-04-08 | 한국재료연구원 | Method for measuring concentration of additive breakdown products included in plating solution |
KR102223889B1 (en) * | 2019-09-30 | 2021-03-09 | 한국재료연구원 | Measuring device for concentration of additive breakdown product in plating solution |
KR102445228B1 (en) * | 2019-09-30 | 2022-09-21 | 한국재료연구원 | Measuring method for concentration of additive breakdown product in plating solution |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100877923B1 (en) * | 2001-06-07 | 2009-01-12 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | Electrolytic copper plating method |
JP4434013B2 (en) * | 2002-05-07 | 2010-03-17 | ユニバーシティ オブ サザン カリフォルニア | Method and apparatus for measuring the quality of a deposit during a plating process using conformable contact mask plating |
US7291253B2 (en) * | 2004-05-04 | 2007-11-06 | Eci Technology, Inc. | Detection of an unstable additive breakdown product in a plating bath |
TWI328622B (en) * | 2005-09-30 | 2010-08-11 | Rohm & Haas Elect Mat | Leveler compounds |
US20070261963A1 (en) * | 2006-02-02 | 2007-11-15 | Advanced Technology Materials, Inc. | Simultaneous inorganic, organic and byproduct analysis in electrochemical deposition solutions |
US8784636B2 (en) * | 2007-12-04 | 2014-07-22 | Ebara Corporation | Plating apparatus and plating method |
US7776741B2 (en) * | 2008-08-18 | 2010-08-17 | Novellus Systems, Inc. | Process for through silicon via filing |
TWI523976B (en) * | 2010-05-19 | 2016-03-01 | 諾菲勒斯系統公司 | Through silicon via filling using an electrolyte with a dual state inhibitor |
US20120024713A1 (en) * | 2010-07-29 | 2012-02-02 | Preisser Robert F | Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) with heated substrate and cooled electrolyte |
-
2013
- 2013-03-15 US US13/835,870 patent/US20140262794A1/en not_active Abandoned
-
2014
- 2014-02-11 SG SG11201506364YA patent/SG11201506364YA/en unknown
- 2014-02-11 DE DE112014001428.1T patent/DE112014001428T5/en not_active Withdrawn
- 2014-02-11 WO PCT/US2014/015876 patent/WO2014149245A1/en active Application Filing
- 2014-02-11 KR KR1020157029505A patent/KR20150132464A/en not_active Application Discontinuation
- 2014-02-11 CN CN201480010935.6A patent/CN105027265A/en active Pending
- 2014-02-17 TW TW103105136A patent/TW201442149A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2014149245A1 (en) | 2014-09-25 |
US20140262794A1 (en) | 2014-09-18 |
KR20150132464A (en) | 2015-11-25 |
CN105027265A (en) | 2015-11-04 |
TW201442149A (en) | 2014-11-01 |
DE112014001428T5 (en) | 2015-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3018696B8 (en) | Manufacturing method for semiconductor substrate | |
SG10201401254VA (en) | Internal plasma grid for semiconductor fabrication | |
SG10201406877WA (en) | Method for chemical mechanical polishing silicon wafers | |
SG10201408517YA (en) | Microstructures for improved wafer handling | |
EP2978018A4 (en) | Method for manufacturing power-module substrate | |
GB201315208D0 (en) | Compound semiconductor structure | |
SG10201708419TA (en) | Internal plasma grid applications for semiconductor fabrication | |
EP2793268A4 (en) | Method for manufacturing semiconductor device | |
SG10201400557WA (en) | Chemical mechanical planarization for tungsten-containing substrates | |
EP2790209A4 (en) | Manufacturing method for semiconductor device | |
EP2836056A4 (en) | Manufacturing method for heat-dissipating substrate | |
EP2966679A4 (en) | Method for manufacturing power-module substrate | |
GB2514918B (en) | Nitride semiconductor substrate | |
GB2510468B (en) | Substrates for semiconductor devices | |
SG11201506364YA (en) | Electrochemical deposition processes for semiconductor wafers | |
SG10201404664QA (en) | Anneal module for semiconductor wafers | |
EP2930751A4 (en) | Handle substrate for compound substrate for use with semiconductor | |
EP2919273A4 (en) | Method for manufacturing semiconductor device | |
EP3014689A4 (en) | Substrate for solid-state battery | |
EP2991099A4 (en) | Handle substrate for composite substrate for semiconductor | |
HK1213090A1 (en) | Tray for tape-frame-fitted wafer | |
EP2897166A4 (en) | Method for manufacturing semiconductor device | |
EP2966674A4 (en) | Method for manufacturing silicon-carbide semiconductor device | |
EP2871668A4 (en) | Handle substrate for compound substrate for use with semiconductor | |
EP2983198A4 (en) | Method for manufacturing silicon carbide semiconductor device |