SG10201401254VA - Internal plasma grid for semiconductor fabrication - Google Patents

Internal plasma grid for semiconductor fabrication

Info

Publication number
SG10201401254VA
SG10201401254VA SG10201401254VA SG10201401254VA SG10201401254VA SG 10201401254V A SG10201401254V A SG 10201401254VA SG 10201401254V A SG10201401254V A SG 10201401254VA SG 10201401254V A SG10201401254V A SG 10201401254VA SG 10201401254V A SG10201401254V A SG 10201401254VA
Authority
SG
Singapore
Prior art keywords
semiconductor fabrication
internal plasma
plasma grid
grid
internal
Prior art date
Application number
SG10201401254VA
Inventor
Alex Paterson
Harmeet Singh
Richard A Marsh
Thorsten Lill
Vahid Vahedi
Ying Wu
Saravanapriyan Sriraman
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201401254VA publication Critical patent/SG10201401254VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
SG10201401254VA 2013-04-05 2014-04-04 Internal plasma grid for semiconductor fabrication SG10201401254VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361809246P 2013-04-05 2013-04-05
US14/082,009 US20140302681A1 (en) 2013-04-05 2013-11-15 Internal plasma grid for semiconductor fabrication

Publications (1)

Publication Number Publication Date
SG10201401254VA true SG10201401254VA (en) 2014-11-27

Family

ID=51654740

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201401112YA SG10201401112YA (en) 2013-04-05 2014-03-31 Internal plasma grid for semiconductor fabrication
SG10201401254VA SG10201401254VA (en) 2013-04-05 2014-04-04 Internal plasma grid for semiconductor fabrication
SG10201708121VA SG10201708121VA (en) 2013-04-05 2014-04-04 Internal plasma grid for semiconductor fabrication

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201401112YA SG10201401112YA (en) 2013-04-05 2014-03-31 Internal plasma grid for semiconductor fabrication

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201708121VA SG10201708121VA (en) 2013-04-05 2014-04-04 Internal plasma grid for semiconductor fabrication

Country Status (6)

Country Link
US (5) US9245761B2 (en)
JP (2) JP6461482B2 (en)
KR (2) KR102270841B1 (en)
CN (3) CN104103478B (en)
SG (3) SG10201401112YA (en)
TW (3) TWI665709B (en)

Families Citing this family (165)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9017526B2 (en) 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
TWI710472B (en) * 2014-04-25 2020-11-21 美商應用材料股份有限公司 Plasma erosion resistant thin film coating for high temperature application
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US11049725B1 (en) 2014-05-29 2021-06-29 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into silicon carbide and gallium nitride
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
KR102413455B1 (en) * 2015-01-02 2022-06-27 어플라이드 머티어리얼스, 인코포레이티드 processing chamber
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
GB201502453D0 (en) * 2015-02-13 2015-04-01 Spts Technologies Ltd Plasma producing apparatus
US9275834B1 (en) * 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
US10049862B2 (en) 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
US9922840B2 (en) * 2015-07-07 2018-03-20 Applied Materials, Inc. Adjustable remote dissociation
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10014198B2 (en) * 2015-08-21 2018-07-03 Lam Research Corporation Wear detection of consumable part in semiconductor manufacturing equipment
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
TW201711077A (en) * 2015-09-04 2017-03-16 漢辰科技股份有限公司 Plasma-based processing system and operation method thereof
US9824896B2 (en) * 2015-11-04 2017-11-21 Lam Research Corporation Methods and systems for advanced ion control for etching processes
CN106676532B (en) * 2015-11-10 2019-04-05 江苏鲁汶仪器有限公司 Metal etch device and method
WO2017123589A1 (en) * 2016-01-15 2017-07-20 Mattson Technology, Inc. Variable pattern separation grid for plasma chamber
US10504746B2 (en) 2016-04-12 2019-12-10 Applied Materials, Inc. HKMG integration
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
JP2018078515A (en) * 2016-11-11 2018-05-17 東京エレクトロン株式会社 Filter device and plasma processing apparatus
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
KR20180081291A (en) 2017-01-06 2018-07-16 삼성전자주식회사 Method of processing a substrate using an ion beam and apparatus performing the same
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
KR102251664B1 (en) * 2017-03-31 2021-05-14 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 Pedestal assembly for plasma processing equipment
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
CN108878242B (en) * 2017-05-10 2021-01-29 北京北方华创微电子装备有限公司 Plasma device
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
EP3404693B1 (en) * 2017-05-19 2019-11-13 Total SA Apparatus and method for patterned processing
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
US11521828B2 (en) * 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (en) 2018-02-28 2021-01-21 美商應用材料股份有限公司 Systems and methods to form airgaps
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
WO2019199697A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Resist and etch modeling
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
KR102133279B1 (en) * 2018-06-20 2020-07-13 주식회사 엘지화학 Manufacturing method of mold for diffraction grating light guide plate and manufacturing method of diffraction grating light guide plate
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
KR102563925B1 (en) * 2018-08-31 2023-08-04 삼성전자 주식회사 Semiconductor manufacturing apparatus
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
CN111146334A (en) * 2018-11-02 2020-05-12 江苏鲁汶仪器有限公司 Magnetic tunnel junction manufacturing method
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
JP7410951B2 (en) 2018-12-17 2024-01-10 アプライド マテリアルズ インコーポレイテッド Method for manufacturing optical devices using electron beam equipment
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11039527B2 (en) * 2019-01-28 2021-06-15 Mattson Technology, Inc. Air leak detection in plasma processing apparatus with separation grid
CN113795610A (en) * 2019-04-26 2021-12-14 朗姆研究公司 High temperature heating of substrates in a processing chamber
KR20230037057A (en) 2019-08-16 2023-03-15 램 리써치 코포레이션 Spatially tunable deposition to compensate within wafer differential bow
KR102225657B1 (en) * 2019-11-14 2021-03-10 피에스케이 주식회사 Baffle unit, substrate processing apparatus including the same
CN111243991B (en) * 2020-01-15 2022-12-09 北京北方华创微电子装备有限公司 Lining and semiconductor processing equipment
US11353364B2 (en) 2020-03-02 2022-06-07 Lam Research Corporation Thermal imaging for within wafer variability feedforward or feedback information
US20210305024A1 (en) * 2020-03-24 2021-09-30 Texas Instruments Incorporated Plasma cleaning for packaging electronic devices
CN117690774B (en) * 2024-02-04 2024-04-16 上海邦芯半导体科技有限公司 ICP device for reducing etching non-uniformity and adjusting method

Family Cites Families (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849276A (en) 1971-03-19 1974-11-19 Ibm Process for forming reactive layers whose thickness is independent of time
US4600464A (en) 1985-05-01 1986-07-15 International Business Machines Corporation Plasma etching reactor with reduced plasma potential
JPH0690811B2 (en) 1985-09-10 1994-11-14 松下電器産業株式会社 Method of making substrate of flat information recording medium
JPH0738384B2 (en) 1986-03-18 1995-04-26 富士通株式会社 Plasma assing device
JPH01302645A (en) 1988-02-08 1989-12-06 Anelva Corp Discharging device
JP2552701B2 (en) 1988-02-29 1996-11-13 日本電信電話株式会社 Ion source
US5015331A (en) 1988-08-30 1991-05-14 Matrix Integrated Systems Method of plasma etching with parallel plate reactor having a grid
JPH02131550U (en) 1989-03-31 1990-11-01
JP2643457B2 (en) 1989-06-28 1997-08-20 三菱電機株式会社 Plasma processing apparatus and method
US5009725A (en) 1990-03-30 1991-04-23 Air Products And Chemicals, Inc. Fluxing agents comprising β-diketone and β-ketoimine ligands and a process for using the same
JPH04137727A (en) 1990-09-28 1992-05-12 Hitachi Ltd Ion beam etching method and ion beam etching device
JP3149454B2 (en) 1991-05-17 2001-03-26 日本電気株式会社 Upper electrode of single wafer plasma etching system
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
JPH0689880A (en) 1992-09-08 1994-03-29 Tokyo Electron Ltd Etching equipment
US5374456A (en) 1992-12-23 1994-12-20 Hughes Aircraft Company Surface potential control in plasma processing of materials
US5431774A (en) 1993-11-30 1995-07-11 Texas Instruments Incorporated Copper etching
JP2604684B2 (en) 1994-02-22 1997-04-30 木下 治久 Plasma process equipment
JPH07335618A (en) 1994-06-08 1995-12-22 Nippon Telegr & Teleph Corp <Ntt> Plasma processing method and plasma processing device
US5474648A (en) 1994-07-29 1995-12-12 Lsi Logic Corporation Uniform and repeatable plasma processing
US5746875A (en) 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
JPH08107101A (en) * 1994-10-03 1996-04-23 Fujitsu Ltd Plasma processing device and plasma processing method
JP3353514B2 (en) * 1994-12-09 2002-12-03 ソニー株式会社 Plasma processing apparatus, plasma processing method, and method for manufacturing semiconductor device
JP3360461B2 (en) 1995-01-31 2002-12-24 ソニー株式会社 Pretreatment method for metal film formation process
JPH08279495A (en) 1995-02-07 1996-10-22 Seiko Epson Corp Method and system for plasma processing
US5710486A (en) 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
US5705443A (en) 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
EP0756309A1 (en) 1995-07-26 1997-01-29 Applied Materials, Inc. Plasma systems for processing substrates
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US5683548A (en) 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
US5849135A (en) 1996-03-12 1998-12-15 The Regents Of The University Of California Particulate contamination removal from wafers using plasmas and mechanical agitation
JP3190830B2 (en) 1996-07-22 2001-07-23 日本電気株式会社 Method for manufacturing semiconductor device
US20040071876A1 (en) * 1996-07-25 2004-04-15 Rakhimov Alexandr Tursunovich Method for forming nanocrystalline diamond films for cold electron emission using hot filament reactor
US6214162B1 (en) 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
US6007673A (en) 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device
US6267074B1 (en) 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
JP4043089B2 (en) 1997-02-24 2008-02-06 株式会社エフオーアイ Plasma processing equipment
JPH10242116A (en) 1997-02-25 1998-09-11 Nkk Corp Parallel flat plate type rie apparatus
JPH10270429A (en) 1997-03-27 1998-10-09 Mitsubishi Electric Corp Plasma treating device
JPH1154717A (en) 1997-08-06 1999-02-26 Sanyo Electric Co Ltd Manufacture of dielectric element
JP3317209B2 (en) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 Plasma processing apparatus and plasma processing method
JP3364675B2 (en) * 1997-09-30 2003-01-08 東京エレクトロンエイ・ティー株式会社 Plasma processing equipment
US6238527B1 (en) * 1997-10-08 2001-05-29 Canon Kabushiki Kaisha Thin film forming apparatus and method of forming thin film of compound by using the same
JPH11219938A (en) 1998-02-02 1999-08-10 Matsushita Electron Corp Plasma etching method
EP1055249A1 (en) 1998-02-09 2000-11-29 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6352049B1 (en) 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
JP2000100790A (en) 1998-09-22 2000-04-07 Canon Inc Plasma treating unit and treatment method using the same
JP2000208483A (en) * 1999-01-08 2000-07-28 Mitsubishi Electric Corp Method and system for processing wafer
JP2000306884A (en) 1999-04-22 2000-11-02 Mitsubishi Electric Corp Apparatus and method for plasma treatment
JP3948857B2 (en) 1999-07-14 2007-07-25 株式会社荏原製作所 Beam source
JP3366301B2 (en) 1999-11-10 2003-01-14 日本電気株式会社 Plasma CVD equipment
US6646223B2 (en) 1999-12-28 2003-11-11 Texas Instruments Incorporated Method for improving ash rate uniformity in photoresist ashing process equipment
JP3510174B2 (en) 2000-03-01 2004-03-22 住友重機械工業株式会社 Ion generator and film forming device
JP2001274143A (en) 2000-03-28 2001-10-05 Tdk Corp Dry etching method, micromachining method and mask for dry etching
US6576202B1 (en) * 2000-04-21 2003-06-10 Kin-Chung Ray Chiu Highly efficient compact capacitance coupled plasma reactor/generator and method
DE10024883A1 (en) 2000-05-19 2001-11-29 Bosch Gmbh Robert Plasma etching system
JP2001332534A (en) 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd Plasma processing method and plasma processing apparatus
JP3882060B2 (en) * 2000-05-29 2007-02-14 株式会社 東北テクノアーチ Method and apparatus for forming high quality diamond
JP4371543B2 (en) 2000-06-29 2009-11-25 日本電気株式会社 Remote plasma CVD apparatus and film forming method
WO2002014810A2 (en) 2000-08-10 2002-02-21 Tokyo Electron Limited Method and apparatus for tuning a plasma reactor chamber
US7430984B2 (en) 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
JP2002069634A (en) * 2000-08-29 2002-03-08 Canon Inc Thin film forming method and equipment for the same
US6949450B2 (en) 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US6461972B1 (en) 2000-12-22 2002-10-08 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
JP3924483B2 (en) 2001-03-19 2007-06-06 アイピーエス リミテッド Chemical vapor deposition equipment
JP2002289585A (en) 2001-03-26 2002-10-04 Ebara Corp Neutral particle beam treatment device
JP2004248505A (en) * 2001-09-21 2004-09-09 Norio Nakatsuji Undifferentiated fusion cell of somatic cell derived from es cell deficient in part or all of transplantation antigen and method for producing the same
KR20030046189A (en) * 2001-12-05 2003-06-12 변홍식 plasma generator
AU2002366921A1 (en) 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP2005514762A (en) 2001-12-20 2005-05-19 東京エレクトロン株式会社 Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6962644B2 (en) 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
AU2003243699B2 (en) 2002-06-21 2009-01-15 Transform Pharmaceuticals, Inc. Pharmaceutical compositions with improved dissolution
US20040025791A1 (en) 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
JP2004153240A (en) 2002-10-09 2004-05-27 Advanced Lcd Technologies Development Center Co Ltd Plasma processing apparatus
KR100810794B1 (en) * 2002-11-20 2008-03-07 동경 엘렉트론 주식회사 Plasma processing apparatus
US7500445B2 (en) 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US7009281B2 (en) 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
JP2004281232A (en) * 2003-03-14 2004-10-07 Ebara Corp Beam source and beam treatment device
AU2004238220B2 (en) * 2003-04-24 2009-05-28 Tyratech, Inc. Compositions and methods for controlling insects
US7976673B2 (en) 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
JP2004349375A (en) * 2003-05-21 2004-12-09 Nec Kansai Ltd Gas dispersing plate of dry etching apparatus
JP4111274B2 (en) 2003-07-24 2008-07-02 キヤノンアネルバ株式会社 Magnetic material dry etching method
US7144521B2 (en) 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
USH2212H1 (en) 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
JP2005116865A (en) 2003-10-09 2005-04-28 Canon Inc System and method for ion milling
US7838430B2 (en) 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
US7461614B2 (en) * 2003-11-12 2008-12-09 Tokyo Electron Limited Method and apparatus for improved baffle plate
JP2005276931A (en) 2004-03-23 2005-10-06 Toshiba Corp Semiconductor device and its manufacturing method
US20050211547A1 (en) 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma reactor and process using plural ion shower grids
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US20050211171A1 (en) 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US20050211546A1 (en) 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma process using an ion shower grid
US7740737B2 (en) 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
JP2006013190A (en) 2004-06-28 2006-01-12 Rohm Co Ltd Method of manufacturing semiconductor device
US20060000802A1 (en) 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
JP2006020032A (en) * 2004-07-01 2006-01-19 Canon Inc Device and method for image processing
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US7381291B2 (en) 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
US7138067B2 (en) 2004-09-27 2006-11-21 Lam Research Corporation Methods and apparatus for tuning a set of plasma processing steps
US7268084B2 (en) * 2004-09-30 2007-09-11 Tokyo Electron Limited Method for treating a substrate
US7396431B2 (en) 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate
KR100663351B1 (en) 2004-11-12 2007-01-02 삼성전자주식회사 Plasma processing apparatus
JP4773079B2 (en) 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ Control method of plasma processing apparatus
JP2006236772A (en) 2005-02-24 2006-09-07 Ebara Corp Neutral particle beam source and neutral particle beam processing apparatus
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
US20090029564A1 (en) * 2005-05-31 2009-01-29 Tokyo Electron Limited Plasma treatment apparatus and plasma treatment method
JP2007035728A (en) 2005-07-22 2007-02-08 Renesas Technology Corp Semiconductor device and manufacturing method thereof
JP2007042951A (en) * 2005-08-04 2007-02-15 Tokyo Electron Ltd Plasma processing device
TWI391518B (en) 2005-09-09 2013-04-01 愛發科股份有限公司 Ion source and plasma processing device
KR100653073B1 (en) * 2005-09-28 2006-12-01 삼성전자주식회사 Apparatus for treating substrate and method of treating substrate
US7358484B2 (en) 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating
JP2007149788A (en) * 2005-11-24 2007-06-14 Aqua Science Kk Remote plasma device
US7335602B2 (en) 2006-01-18 2008-02-26 Freescale Semiconductor, Inc. Charge-free layer by layer etching of dielectrics
US8012306B2 (en) 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US7578258B2 (en) 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
US8034176B2 (en) 2006-03-28 2011-10-11 Tokyo Electron Limited Gas distribution system for a post-etch treatment system
US7645357B2 (en) 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
CH696456A5 (en) * 2006-05-02 2007-06-29 Fostag Holding Ag Stackable cutlery.
US7520999B2 (en) 2006-05-03 2009-04-21 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another
US7938931B2 (en) 2006-05-24 2011-05-10 Lam Research Corporation Edge electrodes with variable power
US7879184B2 (en) 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US7837826B2 (en) 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
JP5463536B2 (en) 2006-07-20 2014-04-09 北陸成型工業株式会社 Shower plate and manufacturing method thereof, and plasma processing apparatus, plasma processing method and electronic device manufacturing method using the shower plate
TWI320237B (en) * 2006-07-24 2010-02-01 Si-substrate and structure of opto-electronic package having the same
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
US7998307B2 (en) * 2006-09-12 2011-08-16 Tokyo Electron Limited Electron beam enhanced surface wave plasma source
US8192576B2 (en) 2006-09-20 2012-06-05 Lam Research Corporation Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing
KR100869359B1 (en) 2006-09-28 2008-11-19 주식회사 하이닉스반도체 Method for fabricating recess gate in semiconductor device
US7897008B2 (en) 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US7909961B2 (en) 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US20080193673A1 (en) 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US8043430B2 (en) 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US8262847B2 (en) 2006-12-29 2012-09-11 Lam Research Corporation Plasma-enhanced substrate processing method and apparatus
US7611936B2 (en) 2007-05-11 2009-11-03 Freescale Semiconductor, Inc. Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method
US20090084501A1 (en) * 2007-09-27 2009-04-02 Tokyo Electron Limited Processing system for producing a negative ion plasma
US7875555B2 (en) 2007-11-29 2011-01-25 Tokyo Electron Limited Method for plasma processing over wide pressure range
US20090162262A1 (en) 2007-12-19 2009-06-25 Applied Material, Inc. Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead
US8187948B2 (en) 2008-02-18 2012-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid gap-fill approach for STI formation
US8643280B2 (en) 2008-03-20 2014-02-04 RUHR-UNIVERSITäT BOCHUM Method for controlling ion energy in radio frequency plasmas
US8185242B2 (en) * 2008-05-07 2012-05-22 Lam Research Corporation Dynamic alignment of wafers using compensation values obtained through a series of wafer movements
US7732759B2 (en) 2008-05-23 2010-06-08 Tokyo Electron Limited Multi-plasma neutral beam source and method of operating
SG179409A1 (en) * 2008-06-10 2012-04-27 Kulicke & Soffa Ind Inc Gas delivery system for reducing oxidation in wire bonding operations
US8460567B2 (en) 2008-07-01 2013-06-11 Tokyo Electron Limited Method and system for etching a MEM device
WO2010023925A1 (en) 2008-09-01 2010-03-04 独立行政法人科学技術振興機構 Plasma etching method, plasma etching device and photonic crystal manufacturing method
JPWO2010064306A1 (en) 2008-12-03 2012-05-10 富士通株式会社 Manufacturing method of semiconductor device
US8236706B2 (en) 2008-12-12 2012-08-07 Mattson Technology, Inc. Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures
JP2010192197A (en) 2009-02-17 2010-09-02 Tokyo Electron Ltd Substrate processing apparatus, and substrate processing method
US20100276391A1 (en) 2009-03-05 2010-11-04 Applied Materials, Inc. Inductively coupled plasma reactor having rf phase control and methods of use thereof
US8382999B2 (en) 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
US8475673B2 (en) 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
WO2011007546A1 (en) 2009-07-16 2011-01-20 キヤノンアネルバ株式会社 Ion-beam generating device, substrate processing device, and manufacturing method of electronic device
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US20110177694A1 (en) 2010-01-15 2011-07-21 Tokyo Electron Limited Switchable Neutral Beam Source
KR20120137361A (en) 2010-02-09 2012-12-20 인테벡, 인코포레이티드 An adjustable shadow mask assembly for use in solar cell fabrications
WO2011106703A2 (en) * 2010-02-26 2011-09-01 Anchor Therapeutics, Inc. Cxcr4 receptor compounds
JP5450187B2 (en) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
JP5388915B2 (en) 2010-03-16 2014-01-15 株式会社東芝 Channel opening / closing device and paper sheet processing device
US20120021136A1 (en) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. System and method for controlling plasma deposition uniformity
KR101742815B1 (en) 2010-07-23 2017-06-01 삼성전자 주식회사 Coating composition for DUV filtering, method of forming a photoresist pattern using the same and method of fabricating a semiconductor device
JP5735232B2 (en) 2010-08-02 2015-06-17 株式会社イー・エム・ディー Plasma processing equipment
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US20130059448A1 (en) 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
JP2012054304A (en) 2010-08-31 2012-03-15 Tokyo Electron Ltd Etching method and etching apparatus
US20120083134A1 (en) 2010-09-30 2012-04-05 Hui-Jung Wu Method of mitigating substrate damage during deposition processes
US20120097330A1 (en) 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design
JP5864879B2 (en) 2011-03-31 2016-02-17 東京エレクトロン株式会社 Substrate processing apparatus and control method thereof
US9490106B2 (en) 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
US9966236B2 (en) * 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
WO2012173699A1 (en) 2011-06-15 2012-12-20 Applied Materials, Inc. Methods and apparatus for performing multiple photoresist layer development and etching processes
TW201308021A (en) 2011-06-15 2013-02-16 Applied Materials Inc Methods and apparatus for controlling photoresist line width roughness with enhanced electron spin control
JP5893864B2 (en) 2011-08-02 2016-03-23 東京エレクトロン株式会社 Plasma etching method
US20160358784A1 (en) 2011-09-07 2016-12-08 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US10388491B2 (en) 2011-10-31 2019-08-20 Canon Anelva Corporation Ion beam etching method of magnetic film and ion beam etching apparatus
KR20140092892A (en) 2011-11-08 2014-07-24 어플라이드 머티어리얼스, 인코포레이티드 Precursor distribution features for improved deposition uniformity
US8461554B1 (en) 2011-12-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for charge neutralization during processing of a workpiece
US20130168352A1 (en) 2011-12-28 2013-07-04 Andreas Fischer Methods and apparatuses for controlling plasma properties by controlling conductance between sub-chambers of a plasma processing chamber
CN202633210U (en) 2012-05-17 2012-12-26 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma etching equipment
TWI467625B (en) 2012-08-30 2015-01-01 Univ Chang Gung The plasma processing device
US9288889B2 (en) 2013-03-13 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for energetic neutral beam processing
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9017526B2 (en) 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator

Also Published As

Publication number Publication date
US10224221B2 (en) 2019-03-05
US20160141188A1 (en) 2016-05-19
JP2014204127A (en) 2014-10-27
US20160203990A1 (en) 2016-07-14
SG10201708121VA (en) 2017-11-29
US20160181130A1 (en) 2016-06-23
TWI677025B (en) 2019-11-11
CN104103478A (en) 2014-10-15
JP2014239210A (en) 2014-12-18
CN107578973A (en) 2018-01-12
KR102270841B1 (en) 2021-06-29
JP6461482B2 (en) 2019-01-30
CN104103478B (en) 2017-05-10
TWI665709B (en) 2019-07-11
CN104103477A (en) 2014-10-15
US11171021B2 (en) 2021-11-09
CN104103477B (en) 2017-08-11
TW201836012A (en) 2018-10-01
TWI636481B (en) 2018-09-21
JP6506915B2 (en) 2019-04-24
CN107578973B (en) 2020-03-13
SG10201401112YA (en) 2014-11-27
US20140302680A1 (en) 2014-10-09
US20140302681A1 (en) 2014-10-09
KR20140121368A (en) 2014-10-15
KR102284325B1 (en) 2021-08-02
KR20140121367A (en) 2014-10-15
US9245761B2 (en) 2016-01-26
TW201511067A (en) 2015-03-16
TW201511066A (en) 2015-03-16

Similar Documents

Publication Publication Date Title
SG10201708121VA (en) Internal plasma grid for semiconductor fabrication
SG10201708419TA (en) Internal plasma grid applications for semiconductor fabrication
TWI563614B (en) Methods of forming semiconductor packages
GB201315208D0 (en) Compound semiconductor structure
EP2942816A4 (en) Semiconductor device
EP2966683A4 (en) Semiconductor device
EP2973716A4 (en) Carbon doping semiconductor devices
EP2836056A4 (en) Manufacturing method for heat-dissipating substrate
HK1206868A1 (en) Semiconductor device
GB2535418B (en) Semiconductor nanowire fabrication
EP2975641A4 (en) Semiconductor device
HK1205590A1 (en) Semiconductor device
EP2874188A4 (en) Semiconductor device
GB201510735D0 (en) Semiconductor device
HK1201376A1 (en) Semiconductor device
EP3021485A4 (en) Semiconductor device
GB2520405B (en) Method for interconnecting stacked semiconductor devices
HK1205356A1 (en) Semiconductor device
HK1213090A1 (en) Tray for tape-frame-fitted wafer
SG11201603049WA (en) Semiconductor device fabrication
HK1201989A1 (en) Semiconductor device
EP2919273A4 (en) Method for manufacturing semiconductor device
GB201320925D0 (en) Semiconductor devices and fabrication methods
HK1202705A1 (en) Semiconductor device
SG11201506364YA (en) Electrochemical deposition processes for semiconductor wafers