SG10201400557WA - Chemical mechanical planarization for tungsten-containing substrates - Google Patents

Chemical mechanical planarization for tungsten-containing substrates

Info

Publication number
SG10201400557WA
SG10201400557WA SG10201400557WA SG10201400557WA SG10201400557WA SG 10201400557W A SG10201400557W A SG 10201400557WA SG 10201400557W A SG10201400557W A SG 10201400557WA SG 10201400557W A SG10201400557W A SG 10201400557WA SG 10201400557W A SG10201400557W A SG 10201400557WA
Authority
SG
Singapore
Prior art keywords
tungsten
chemical mechanical
mechanical planarization
containing substrates
substrates
Prior art date
Application number
SG10201400557WA
Inventor
Shi Xiaobo
Zhou Hongjun
J Lew Blake
Allen Schlueter James
Theresa Schwartz Jo-Ann
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201400557WA publication Critical patent/SG10201400557WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Cosmetics (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG10201400557WA 2013-03-12 2014-03-11 Chemical mechanical planarization for tungsten-containing substrates SG10201400557WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361777165P 2013-03-12 2013-03-12
US14/142,087 US20140273458A1 (en) 2013-03-12 2013-12-27 Chemical Mechanical Planarization for Tungsten-Containing Substrates

Publications (1)

Publication Number Publication Date
SG10201400557WA true SG10201400557WA (en) 2014-10-30

Family

ID=50238282

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201400557WA SG10201400557WA (en) 2013-03-12 2014-03-11 Chemical mechanical planarization for tungsten-containing substrates

Country Status (8)

Country Link
US (1) US20140273458A1 (en)
EP (1) EP2779217A2 (en)
JP (1) JP2014194016A (en)
KR (1) KR20140111992A (en)
CN (1) CN104046246B (en)
IL (1) IL231408A0 (en)
SG (1) SG10201400557WA (en)
TW (1) TWI503407B (en)

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US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
KR102390630B1 (en) * 2014-03-12 2022-04-26 씨엠씨 머티리얼즈, 인코포레이티드 Compositions and methods for cmp of tungsten materials
CN104371649B (en) * 2014-09-28 2017-05-10 顾泉 Chemical-mechanical polishing composition
US20160122590A1 (en) * 2014-10-31 2016-05-05 Air Products And Chemicals, Inc. Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor
CN104513627B (en) * 2014-12-22 2017-04-05 深圳市力合材料有限公司 A kind of integrated circuit copper CMP composition and preparation method thereof
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US10032644B2 (en) 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
JP6663033B2 (en) 2016-03-01 2020-03-11 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド Method for chemical mechanical polishing of substrate
TWI601198B (en) * 2016-03-01 2017-10-01 羅門哈斯電子材料Ｃｍｐ控股公司 Method of chemical mechanical polishing a substrate
KR101816795B1 (en) 2016-06-30 2018-01-10 한국화학연구원 Novel tertiary amine-based polyol and preparation method of polyurethane using the same autocatalysts
WO2018147148A1 (en) * 2017-02-08 2018-08-16 株式会社フジミインコーポレーテッド Polishing composition
JP6508501B1 (en) * 2017-08-03 2019-05-08 Jsr株式会社 Semiconductor processing composition and processing method
JP6784798B2 (en) * 2018-06-01 2020-11-11 ケーシーテック カンパニー リミテッド Slurry composition for polishing
US11066575B2 (en) * 2018-09-06 2021-07-20 Versum Materials Us, Llc Chemical mechanical planarization for tungsten-containing substrates
JP7088797B2 (en) * 2018-09-25 2022-06-21 株式会社フジミインコーポレーテッド Tungsten dissolution inhibitor, and polishing composition and surface treatment composition using it.
CN111378366B (en) * 2018-12-27 2022-11-18 安集微电子（上海）有限公司 Chemical mechanical polishing solution and application thereof
CN111378379B (en) * 2018-12-29 2022-08-05 安集微电子（上海）有限公司 Chemical mechanical polishing solution and application thereof
CN111378377A (en) * 2018-12-29 2020-07-07 安集微电子（上海）有限公司 Chemical mechanical polishing solution and application thereof
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
CN114433159A (en) * 2020-10-31 2022-05-06 华为技术有限公司 Composite catalyst for chemical mechanical planarization, preparation method thereof and polishing solution
CN114806414B (en) * 2022-05-05 2023-07-11 万华化学集团电子材料有限公司 Silicon polishing composition, preparation method and application thereof

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US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
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AU6379500A (en) * 1999-08-13 2001-03-13 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
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US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
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JP5164129B2 (en) * 2004-03-29 2013-03-13 ニッタ・ハース株式会社 Semiconductor polishing composition
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CN101180379B (en) * 2005-03-25 2013-07-24 气体产品与化学公司 Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
KR101094662B1 (en) * 2008-07-24 2011-12-20 솔브레인 주식회사 Chemical mechanical polishing composition including a stopping agent of poly-silicon polishing
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Also Published As

Publication number Publication date
TWI503407B (en) 2015-10-11
CN104046246B (en) 2016-06-15
IL231408A0 (en) 2014-08-31
JP2014194016A (en) 2014-10-09
EP2779217A2 (en) 2014-09-17
TW201435073A (en) 2014-09-16
CN104046246A (en) 2014-09-17
KR20140111992A (en) 2014-09-22
US20140273458A1 (en) 2014-09-18

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