CN104371649B - Chemical-mechanical polishing composition - Google Patents
Chemical-mechanical polishing composition Download PDFInfo
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- CN104371649B CN104371649B CN201410507649.2A CN201410507649A CN104371649B CN 104371649 B CN104371649 B CN 104371649B CN 201410507649 A CN201410507649 A CN 201410507649A CN 104371649 B CN104371649 B CN 104371649B
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- 239000000203 mixture Substances 0.000 title claims abstract description 27
- 238000005498 polishing Methods 0.000 title abstract description 7
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 17
- 230000007797 corrosion Effects 0.000 claims abstract description 14
- 238000005260 corrosion Methods 0.000 claims abstract description 14
- 239000003112 inhibitor Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract 4
- 238000000227 grinding Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000006061 abrasive grain Substances 0.000 claims description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000003456 ion exchange resin Substances 0.000 claims description 6
- 229920003303 ion-exchange polymer Polymers 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- GIIWGCBLYNDKBO-UHFFFAOYSA-N Quinoline 1-oxide Chemical compound C1=CC=C2[N+]([O-])=CC=CC2=C1 GIIWGCBLYNDKBO-UHFFFAOYSA-N 0.000 claims description 4
- RUIZBQQGWNBRFH-UHFFFAOYSA-N 1-oxidopyrazin-1-ium Chemical class [O-][N+]1=CC=NC=C1 RUIZBQQGWNBRFH-UHFFFAOYSA-N 0.000 claims description 3
- GAJBWMUZVXJIBO-UHFFFAOYSA-N 1-oxidopyridazin-1-ium Chemical class [O-][N+]1=CC=CC=N1 GAJBWMUZVXJIBO-UHFFFAOYSA-N 0.000 claims description 3
- 229910002012 Aerosil® Inorganic materials 0.000 claims description 3
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 claims description 3
- 150000002506 iron compounds Chemical class 0.000 claims description 3
- 229940100890 silver compound Drugs 0.000 claims description 3
- 150000003379 silver compounds Chemical class 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- OQZGLXOADHKTDN-UHFFFAOYSA-N 1-oxidopyrimidin-1-ium Chemical class [O-][N+]1=CC=CN=C1 OQZGLXOADHKTDN-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- 206010011224 Cough Diseases 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 abstract description 11
- 239000010937 tungsten Substances 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000003957 anion exchange resin Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- UTBXIKGTARXRTH-UHFFFAOYSA-N 1-hydroxy-2,3-dihydropyrrole Chemical class ON1CCC=C1 UTBXIKGTARXRTH-UHFFFAOYSA-N 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- ILVXOBCQQYKLDS-UHFFFAOYSA-N pyridine N-oxide Chemical group [O-][N+]1=CC=CC=C1 ILVXOBCQQYKLDS-UHFFFAOYSA-N 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 1
- 229910000360 iron(III) sulfate Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- -1 organic acid salt Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a chemical-mechanical polishing composition. The composition comprises polishing particles, an oxidant, a corrosion inhibitor and water, wherein the polishing particles are polishing particles of a coated metal compound. The chemical-mechanical polishing composition has the advantages of rapid tungsten metal removal speed, effective control of jack defects, and wide application prospect.
Description
Technical field
The invention belongs to crystalline material cmp technology field, and in particular to a kind of cmp combination
Thing.
Background technology
With the continuous evolution of semiconductor technology, in super large-scale integration processing procedure, crystal column surface global planarizartion
It is particularly significant that technology becomes, and cmp (Chemical Mechanical Polishing, CMP) technology is current
Generally acknowledge most universal and effective flattening method.It is related to the cmp of tungsten substrate in prior art, commonly uses lapping liquid many
To add metallic salt as catalyst, with hydrogen peroxide as oxidant, shortcoming is easily to have metal residual in crystal column surface, and tungsten is invaded
Erosion speed is too fast, causes the excessive defect of jack depression.
The content of the invention
The present invention overcomes the above-mentioned problems in the prior art, it is proposed that a kind of new Chemicomechanically grinding composition,
It has the advantages that tungsten metal removal speed is quick, effective control jack is recessed.
A kind of Chemicomechanically grinding composition proposed by the present invention, it includes：The abrasive grains of coating metal compound, oxidation
Agent, corrosion inhibitor and water.Wherein, the coating metal compound is iron compound, copper compound or silver compound.
Wherein, the abrasive grains of the coating metal compound be by abrasive grains and slaine by ion exchange resin shape
Into, its preparation procedure is as follows：Abrasive grains are mixed with metal salt solution first, then the nothing by ion exchange resin to select
Machine acid regeneration, the ion exchange resin for finally abrasive grains solution being passed through into regeneration, you can obtain the grinding of coating metal compound
Grain.The abrasive grains include aerosil (Fumed silica), silica melten gel (Colloidal silica), gas
Phase alumina (Fumed aluminum oxide) or its any combination.The slaine includes metal nitrate, metal sulfate
Salt or metal organic acid salt；Wherein, the metal is iron, copper or silver.The ion exchange resin is exchanged including strong alkali anion
Resin, the anion exchange resin has quaternary ammonium type exchange base (Quaternary ammonium type of exchange
group).The inorganic acid to regenerate includes hydrochloric acid, sulfuric acid or nitric acid.In one specific embodiment, by silica
Melten gel mixes with ferrum sulfuricum oxydatum solutum, by the strong basic anion-exchange resin crossed with nitric acid recovery, can obtain coating ferric nitrate it
Silica melten gel.
In Chemicomechanically grinding composition of the present invention, the oxidant is hydrogen peroxide.
In Chemicomechanically grinding composition of the present invention, the corrosion inhibitor is amine-n-oxides.Preferably, the corruption
Corrosion inhibitor is pyridine-N-oxides, methylmorpholine-N-oxide, Quinoline-N-oxide, pyrazine-N- oxides, pyrimidine-N- oxidations
One or more in thing, pyridazine-N- oxides or pyrrolin-N- oxides.
In Chemicomechanically grinding composition of the present invention, the abrasive grains content of the coating metal compound is the grinding group
The 0.1%-5% percentage by weights of compound, wherein metal ion content are the 10ppm-500ppm weight of the abrasive composition
Percentage.The oxygenate content is the 1%-10% percentage by weights of the abrasive composition.The corrosion inhibitor content
For the 10ppm-5000ppm percentage by weights of the abrasive composition.The content of water is in the Chemicomechanically grinding composition
Surplus in addition to the components such as abrasive grains, oxidant, corrosion inhibitor except coating metal compound.
Preferably, the content of the abrasive grains of the coating metal compound is the 0.5-3% weight of the abrasive composition
Percentage.Preferably, the oxygenate content is the 2-5% percentage by weights of the abrasive composition.Preferably, the corrosion
Inhibitor content is 100-1000ppm percentage by weights.
The pH value of Chemicomechanically grinding composition of the present invention is 2-6.
Chemicomechanically grinding composition of the present invention have quickly remove tungsten metal, effective control jack depression etc. beneficial effect
Really.
Specific embodiment
With reference to specific examples below, the present invention is described in further detail, the protection content of the present invention is not limited to
Following examples.Under the spirit and scope without departing substantially from inventive concept, those skilled in the art it is conceivable that change and advantage
All it is included in the present invention, and with appending claims as protection domain.Implement process, condition, the examination of the present invention
Agent, experimental technique etc., in addition to the following content for specially referring to, are the universal knowledege and common knowledge of this area, the present invention
Content is not particularly limited.
Chemicomechanically grinding composition of the present invention includes abrasive grains, oxidant, the corrosion inhibitor of coating metal compound
And water.
Wherein, the abrasive grains of the coating metal compound by abrasive grains and slaine by ion exchange resin shape
Into；Wherein, the metallic compound is iron compound, copper compound or silver compound.Wherein, the coating metal compound it
Abrasive grains are aerosil, silica melten gel, gaseous oxidation aluminium or its any combination.
Wherein, the oxidant is hydrogen peroxide.
Wherein, the corrosion inhibitor is amine-n-oxides, selected from pyridine-N-oxides, methylmorpholine-N-oxide, quinoline
In quinoline-N- oxides, pyrazine-N- oxides, pyrimidine-N- oxides, pyridazine-N- oxides or pyrrolin-N- oxides one
Plant or various.
In Chemicomechanically grinding composition of the present invention, the content of the abrasive grains of the coating metal compound is 0.1%-
5% percentage by weight, it is preferable that for 0.5-3% percentage by weights.The content of the oxidant is 1%-10% weight percents
Than, it is preferable that for 2-5% percentage by weights.The content of the corrosion inhibitor is 10ppm-5000ppm percentage by weights, excellent
Selection of land, is 100-1000ppm percentage by weights；Balance of water.
Wherein, the pH value of Chemicomechanically grinding composition is 2-6.
The each component and content of abrasive composition of the present invention, pH, tungsten removing speed, tungsten in following embodiment and comparative example
Jack depression etc. is recorded in the following table 1.In embodiment, the abrasive grains of coating metal compound are the dioxy of coating ferric nitrate
SiClx abrasive grains；It is by silicon dioxde solution that percentage by weight is 40% and ferric sulfate mixing and stirring, by with nitric acid
The anion exchange resin (Dowex SBR-OH form) of regeneration, so as to prepare the Silica abrasive of coating ferric nitrate
Grain.
Work-table of chemicomechanical grinding mill and grinding condition are：Work-table of chemicomechanical grinding mill model：8 inch Mirra (AMAT)；Grind
Pressure (down force) under bistrique：4psi；Platform rotating speed/grinding head rotating speed (platen/head speed)：90/90rpm；
Grinding flow quantity：175ml/min.
Table 1
From embodiment 1,2 and comparative example 1,2, the silica of coating metal compound can effectively greatly improve tungsten shifting
Except speed.Comparing embodiment 1,2 is visible with comparative example 2, and corrosion inhibitor can effectively reduce tungsten jack depression.Though and comparative example 2
So have high tungsten removing speed, but tungsten jack depression is excessive, it is impossible to it is suitable for.
Claims (3)
1. a kind of Chemicomechanically grinding composition, it is characterised in that the abrasive composition includes：Coating metal compound grinds
Abrasive particle, oxidant, corrosion inhibitor and water；Wherein, the corrosion inhibitor is amine-n-oxides, selected from pyridine-N- oxidations
Thing, methylmorpholine-N-oxide, Quinoline-N-oxide, pyrazine-N- oxides, pyrimidine-N- oxides, pyridazine-N- oxides or pyrrole
Cough up one or more in quinoline-N- oxides；The abrasive grains are aerosil, silicon dioxide gel, gaseous oxidation aluminium
Or its any combination；The oxidant is hydrogen peroxide；The pH value of the abrasive composition is 2-6；The coating metal chemical combination
The abrasive grains content of thing be 0.1%-5% percentage by weights, the oxygenate content be 1%-10% percentage by weights, the corruption
Erosion suppresses content for 10ppm-5000ppm percentage by weights, balance of water.
2. Chemicomechanically grinding composition as claimed in claim 1, it is characterised in that the grinding of the coating metal compound
Grain content is 0.5-3% percentage by weights；The oxygenate content is 2-5% percentage by weights；The corrosion inhibitor content
For 100-1000ppm percentage by weights；Balance of water.
3. Chemicomechanically grinding composition as claimed in claim 1, it is characterised in that the grinding of the coating metal compound
Grain is formed with slaine by abrasive grains by ion exchange resin；Wherein, the metallic compound is iron compound, copper chemical combination
Thing or silver compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410507649.2A CN104371649B (en) | 2014-09-28 | 2014-09-28 | Chemical-mechanical polishing composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410507649.2A CN104371649B (en) | 2014-09-28 | 2014-09-28 | Chemical-mechanical polishing composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104371649A CN104371649A (en) | 2015-02-25 |
| CN104371649B true CN104371649B (en) | 2017-05-10 |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113201285A (en) * | 2021-04-29 | 2021-08-03 | 安徽应友光电科技有限公司 | Precise grinding fluid for back plate of CVD (chemical vapor deposition) equipment, preparation process and processing method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10164262A1 (en) * | 2001-12-27 | 2003-07-17 | Bayer Ag | Composition for the chemical mechanical polishing of metal and metal / dielectric structures |
| US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US7476620B2 (en) * | 2005-03-25 | 2009-01-13 | Dupont Air Products Nanomaterials Llc | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
| US20080149591A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing |
| US8222145B2 (en) * | 2009-09-24 | 2012-07-17 | Dupont Air Products Nanomaterials, Llc | Method and composition for chemical mechanical planarization of a metal-containing substrate |
| TWI574916B (en) * | 2011-09-19 | 2017-03-21 | 盟智科技股份有限公司 | Silica having metal ions absorbed thereon and fabricating method thereof |
| CN103865401A (en) * | 2012-12-10 | 2014-06-18 | 安集微电子（上海）有限公司 | Application of chemo-mechanical polishing liquid |
| US20140273458A1 (en) * | 2013-03-12 | 2014-09-18 | Air Products And Chemicals, Inc. | Chemical Mechanical Planarization for Tungsten-Containing Substrates |
| US20140315386A1 (en) * | 2013-04-19 | 2014-10-23 | Air Products And Chemicals, Inc. | Metal Compound Coated Colloidal Particles Process for Making and Use Therefor |
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Effective date of registration: 20190812 Address after: 226100 Room 9, No. 698 Fujiang South Road, Haimen Town, Haimen City, Nantong City, Jiangsu Province Patentee after: Jiangsu Xuyuteng Semiconductor Technology Co., Ltd. Address before: Room 604, 665 Zhangjiang Road, Pudong New Area, Shanghai, 201203 Patentee before: Gu Quan |