SG11201507485XA - Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems - Google Patents

Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems

Info

Publication number
SG11201507485XA
SG11201507485XA SG11201507485XA SG11201507485XA SG11201507485XA SG 11201507485X A SG11201507485X A SG 11201507485XA SG 11201507485X A SG11201507485X A SG 11201507485XA SG 11201507485X A SG11201507485X A SG 11201507485XA SG 11201507485X A SG11201507485X A SG 11201507485XA
Authority
SG
Singapore
Prior art keywords
provisions
vapor deposition
chemical vapor
wafer carrier
deposition systems
Prior art date
Application number
SG11201507485XA
Inventor
Sandeep Krishnan
William E Quinn
Jeffrey S Montgomery
Joshua Mangum
Lukas Urban
Original Assignee
Veeco Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instr Inc filed Critical Veeco Instr Inc
Publication of SG11201507485XA publication Critical patent/SG11201507485XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P19/00—Machines for simply fitting together or separating metal parts or objects, or metal and non-metal parts, whether or not involving some deformation; Tools or devices therefor so far as not provided for in other classes
    • B23P19/04—Machines for simply fitting together or separating metal parts or objects, or metal and non-metal parts, whether or not involving some deformation; Tools or devices therefor so far as not provided for in other classes for assembling or disassembling parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201507485XA 2013-03-15 2014-03-14 Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems SG11201507485XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/840,164 US10167571B2 (en) 2013-03-15 2013-03-15 Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
PCT/US2014/027773 WO2014143703A1 (en) 2013-03-15 2014-03-14 Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems

Publications (1)

Publication Number Publication Date
SG11201507485XA true SG11201507485XA (en) 2015-10-29

Family

ID=51206352

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201507485XA SG11201507485XA (en) 2013-03-15 2014-03-14 Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems

Country Status (10)

Country Link
US (1) US10167571B2 (en)
EP (1) EP2973661A4 (en)
JP (1) JP2016519426A (en)
KR (2) KR20140005081U (en)
CN (2) CN105051865B (en)
DE (1) DE202014002365U1 (en)
FR (1) FR3003399B3 (en)
SG (1) SG11201507485XA (en)
TW (2) TWI619843B (en)
WO (1) WO2014143703A1 (en)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324590B2 (en) * 2010-02-24 2016-04-26 Veeco Instruments Inc. Processing methods and apparatus with temperature distribution control
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
US10167571B2 (en) * 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
DE102013009925A1 (en) * 2013-06-13 2014-12-18 Centrotherm Photovoltaics Ag Measuring object, method for producing the same and apparatus for the thermal treatment of substrates
TWI650832B (en) 2013-12-26 2019-02-11 維克儀器公司 Wafer carrier having thermal cover for chemical vapor deposition systems
EP3100298B1 (en) 2014-01-27 2020-07-15 Veeco Instruments Inc. Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
JP6567667B2 (en) 2014-11-26 2019-08-28 フォン アルデンヌ アセット ゲーエムベーハー ウント コー カーゲー Substrate holding device, substrate transport device, processing arrangement, and method for processing a substrate
DE102015101221A1 (en) * 2014-11-26 2016-06-02 Von Ardenne Gmbh Substrate holding device, substrate transport device, processing device and method for processing a substrate
CN105762093B (en) * 2014-12-16 2019-02-19 北京北方华创微电子装备有限公司 Processing chamber and judge wafer position on pallet whether Yi Chang method
WO2016117589A1 (en) * 2015-01-22 2016-07-28 株式会社日立国際電気 Substrate processing device, method for manufacturing semiconductor device, and susceptor
CN105990211A (en) * 2015-03-03 2016-10-05 北京北方微电子基地设备工艺研究中心有限责任公司 Cover plate, bearing device and semiconductor processing equipment
USD793971S1 (en) 2015-03-27 2017-08-08 Veeco Instruments Inc. Wafer carrier with a 14-pocket configuration
USD778247S1 (en) * 2015-04-16 2017-02-07 Veeco Instruments Inc. Wafer carrier with a multi-pocket configuration
US9627239B2 (en) * 2015-05-29 2017-04-18 Veeco Instruments Inc. Wafer surface 3-D topography mapping based on in-situ tilt measurements in chemical vapor deposition systems
JP2018522401A (en) * 2015-06-22 2018-08-09 ビーコ インストゥルメンツ インコーポレイテッド Self-centered wafer carrier system for chemical vapor deposition.
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
EP3338299A4 (en) * 2015-08-18 2019-05-15 Veeco Instruments Inc. Process-specific wafer carrier correction to improve thermal uniformity in chemical vapor deposition systems and processes
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
CN105690299B (en) * 2016-04-08 2017-08-25 航天精工股份有限公司 One kind vapour deposition shallow layer solidification frock
US10276426B2 (en) * 2016-05-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for performing spin dry etching
JP6989587B2 (en) * 2016-07-09 2022-01-05 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated Board carrier
DE102016214445A1 (en) * 2016-08-04 2018-02-08 Meyer Burger (Germany) Ag Adapter device for substrate carrier
US10923385B2 (en) * 2016-11-03 2021-02-16 Lam Research Corporation Carrier plate for use in plasma processing systems
JP6850590B2 (en) * 2016-11-17 2021-03-31 昭和電工株式会社 Mounting plate, wafer support, and chemical vapor deposition
TWI749159B (en) 2017-01-27 2021-12-11 德商愛思強歐洲公司 Transport ring
US10829866B2 (en) 2017-04-03 2020-11-10 Infineon Technologies Americas Corp. Wafer carrier and method
TWI643973B (en) * 2017-11-16 2018-12-11 錼創顯示科技股份有限公司 Wafer carrier and metal organic chemical vapor deposition apparatus
USD860146S1 (en) 2017-11-30 2019-09-17 Veeco Instruments Inc. Wafer carrier with a 33-pocket configuration
USD863239S1 (en) 2018-03-26 2019-10-15 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD860147S1 (en) 2018-03-26 2019-09-17 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD858469S1 (en) 2018-03-26 2019-09-03 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD866491S1 (en) 2018-03-26 2019-11-12 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD854506S1 (en) 2018-03-26 2019-07-23 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
CN108950680A (en) * 2018-08-09 2018-12-07 上海新昇半导体科技有限公司 Extension pedestal and epitaxial device
SE1930124A1 (en) * 2019-04-12 2020-10-13 Epiluvac Ab Device and method for ensuring flatness of wafer during growth
KR102238016B1 (en) * 2019-11-07 2021-04-08 주식회사 한화 Apparatus for processing substrate
CN215560803U (en) * 2020-03-27 2022-01-18 首尔伟傲世有限公司 Wafer carrier
US20230234094A1 (en) * 2020-06-17 2023-07-27 Evatec Ag Vacuum treatment apparatus
CN214300348U (en) * 2021-01-26 2021-09-28 苏州晶湛半导体有限公司 Graphite plate
JPWO2022185453A1 (en) * 2021-03-03 2022-09-09
TWI751078B (en) * 2021-04-28 2021-12-21 錼創顯示科技股份有限公司 Semiconductor wafer carrier structure and metal organic chemical vapor deposition device
WO2023220210A1 (en) * 2022-05-13 2023-11-16 Lam Research Corporation Carrier ring with tabs

Family Cites Families (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7103019A (en) 1971-03-06 1972-09-08
NL7209297A (en) 1972-07-01 1974-01-03
US3993018A (en) 1975-11-12 1976-11-23 International Business Machines Corporation Centrifugal support for workpieces
US5242501A (en) 1982-09-10 1993-09-07 Lam Research Corporation Susceptor in chemical vapor deposition reactors
JPS60173852A (en) 1984-02-20 1985-09-07 Wakomu:Kk Substrate holder for wafer treatment
US4512841A (en) 1984-04-02 1985-04-23 International Business Machines Corporation RF Coupling techniques
JPS6396912A (en) 1986-10-14 1988-04-27 Toshiba Ceramics Co Ltd Substrate holder
JPS63186422A (en) 1987-01-28 1988-08-02 Tadahiro Omi Wafer susceptor
JPH01256118A (en) 1988-04-05 1989-10-12 Sumitomo Metal Ind Ltd Vapor phase reaction equipment
US4898639A (en) 1989-04-14 1990-02-06 Bjorne Enterprises, Inc. Wafer retention device
US6375741B2 (en) 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
JPH04123265A (en) 1990-09-14 1992-04-23 Fujitsu Ltd Device for assisting data base
US5155652A (en) 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5195729A (en) 1991-05-17 1993-03-23 National Semiconductor Corporation Wafer carrier
JPH0529230A (en) 1991-07-22 1993-02-05 Toshiba Corp Vapor deposition device
JPH05275355A (en) 1992-03-27 1993-10-22 Toshiba Corp Vapor growth device
JPH05335253A (en) 1992-06-01 1993-12-17 Toshiba Corp Vapor growth device
JPH0610140A (en) 1992-06-24 1994-01-18 Fuji Film Micro Device Kk Thin film deposition device
US5820686A (en) 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
NL9300389A (en) 1993-03-04 1994-10-03 Xycarb Bv Substrate carrier.
JP2652759B2 (en) 1993-09-03 1997-09-10 コマツ電子金属株式会社 Wafer pocket of barrel type susceptor for vapor phase growth equipment
EP0664347A3 (en) 1994-01-25 1997-05-14 Applied Materials Inc Apparatus for depositing a uniform layer of material on a substrate.
US5556476A (en) 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US5645646A (en) 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US6074696A (en) 1994-09-16 2000-06-13 Kabushiki Kaisha Toshiba Substrate processing method which utilizes a rotary member coupled to a substrate holder which holds a target substrate
JPH0936049A (en) 1995-07-21 1997-02-07 Mitsubishi Electric Corp Vapor phase growth device and compound semiconductor device manufactured with said device
JP3586031B2 (en) 1996-03-27 2004-11-10 株式会社東芝 Susceptor, heat treatment apparatus and heat treatment method
US5761023A (en) 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US6001183A (en) * 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US5837058A (en) 1996-07-12 1998-11-17 Applied Materials, Inc. High temperature susceptor
JPH1060674A (en) 1996-08-23 1998-03-03 Shibaura Eng Works Co Ltd Vacuum treating device
JP3596710B2 (en) 1996-09-10 2004-12-02 信越半導体株式会社 Susceptor for vapor phase epitaxy
JPH10144758A (en) 1996-11-11 1998-05-29 Kokusai Electric Co Ltd Substrate transfer plate
JP3887052B2 (en) 1996-12-13 2007-02-28 東洋炭素株式会社 Vapor growth susceptor
JP3923576B2 (en) 1996-12-13 2007-06-06 東洋炭素株式会社 Vapor growth susceptor
US5951770A (en) 1997-06-04 1999-09-14 Applied Materials, Inc. Carousel wafer transfer system
US5840124A (en) * 1997-06-30 1998-11-24 Emcore Corporation Wafer carrier with flexible wafer flat holder
WO1999023691A2 (en) 1997-11-03 1999-05-14 Asm America, Inc. Improved low mass wafer support system
US6126382A (en) 1997-11-26 2000-10-03 Novellus Systems, Inc. Apparatus for aligning substrate to chuck in processing chamber
US6143079A (en) 1998-11-19 2000-11-07 Asm America, Inc. Compact process chamber for improved process uniformity
JP2000355766A (en) 1999-06-15 2000-12-26 Hitachi Kokusai Electric Inc Device and method for processing substrate
US6092623A (en) 1999-06-25 2000-07-25 Collavino; Loris Safety anchor system
KR100565138B1 (en) 1999-07-26 2006-03-30 비코 인스트루먼츠 인코포레이티드 Apparatus for growing epitaxial layers on wafers
FR2797999B1 (en) 1999-08-31 2003-08-08 St Microelectronics Sa METHOD FOR MANUFACTURING AN INTEGRATED CAPACITY ON A SILICON SUBSTRATE
JP4592849B2 (en) 1999-10-29 2010-12-08 アプライド マテリアルズ インコーポレイテッド Semiconductor manufacturing equipment
US20020018506A1 (en) 2000-06-19 2002-02-14 Lambda Physik Ag Line selection of molecular fluorine laser emission
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
US6634882B2 (en) 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
US6506252B2 (en) 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
CN1271678C (en) * 2001-05-18 2006-08-23 马特森热力产品有限责任公司 Device for accommodating disk-shaped objects and apparatus for handling objects
US6902623B2 (en) 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
US6682295B2 (en) 2001-06-21 2004-01-27 Novellus Systems, Inc. Flatted object passive aligner
JP2003037071A (en) 2001-07-25 2003-02-07 Shin Etsu Handotai Co Ltd Susceptor, vapor phase epitaxial growth device and method for vapor phase epitaxy
US20030089457A1 (en) 2001-11-13 2003-05-15 Applied Materials, Inc. Apparatus for controlling a thermal conductivity profile for a pedestal in a semiconductor wafer processing chamber
ITMI20020306A1 (en) 2002-02-15 2003-08-18 Lpe Spa RECEIVER EQUIPPED WITH REENTRANCES AND EPITAXIAL REACTOR THAT USES THE SAME
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US7070660B2 (en) 2002-05-03 2006-07-04 Asm America, Inc. Wafer holder with stiffening rib
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US7381276B2 (en) 2002-07-16 2008-06-03 International Business Machines Corporation Susceptor pocket with beveled projection sidewall
US20040011780A1 (en) 2002-07-22 2004-01-22 Applied Materials, Inc. Method for achieving a desired process uniformity by modifying surface topography of substrate heater
US7256375B2 (en) 2002-08-30 2007-08-14 Asm International N.V. Susceptor plate for high temperature heat treatment
JP2004128271A (en) 2002-10-03 2004-04-22 Toyo Tanso Kk Susceptor
DE10260672A1 (en) 2002-12-23 2004-07-15 Mattson Thermal Products Gmbh Method and device for the thermal treatment of disk-shaped substrates
DE10261362B8 (en) 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrate holder
WO2004090967A1 (en) 2003-04-02 2004-10-21 Sumco Corporation Semiconductor wafer heat treating jig
JP4019998B2 (en) 2003-04-14 2007-12-12 信越半導体株式会社 Susceptor and vapor phase growth apparatus
JP2004327761A (en) 2003-04-25 2004-11-18 Sumitomo Mitsubishi Silicon Corp Susceptor for epitaxial growth
JP4599816B2 (en) 2003-08-01 2010-12-15 信越半導体株式会社 Manufacturing method of silicon epitaxial wafer
US7235139B2 (en) 2003-10-28 2007-06-26 Veeco Instruments Inc. Wafer carrier for growing GaN wafers
JP2005136025A (en) 2003-10-29 2005-05-26 Trecenti Technologies Inc Semiconductor manufacturing apparatus, method of manufacturing semiconductor device, and wafer stage
JP2005150506A (en) 2003-11-18 2005-06-09 Sumitomo Electric Ind Ltd Semiconductor manufacturing apparatus
JP2005232488A (en) 2004-02-17 2005-09-02 Taiyo Nippon Sanso Corp Vapor deposition apparatus
KR101322217B1 (en) 2004-02-25 2013-10-25 닛코킨조쿠 가부시키가이샤 Epitaxially growing equipment
US20050217585A1 (en) 2004-04-01 2005-10-06 Blomiley Eric R Substrate susceptor for receiving a substrate to be deposited upon
US20060060145A1 (en) 2004-09-17 2006-03-23 Van Den Berg Jannes R Susceptor with surface roughness for high temperature substrate processing
JP4833074B2 (en) 2004-09-30 2011-12-07 株式会社日立国際電気 Heat treatment apparatus, heat treatment method, substrate manufacturing method, and semiconductor device manufacturing method
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
CN101115862A (en) 2005-02-16 2008-01-30 维高仪器股份有限公司 Wafer carrier for growing GaN wafer
TWI327339B (en) 2005-07-29 2010-07-11 Nuflare Technology Inc Vapor phase growing apparatus and vapor phase growing method
US8603248B2 (en) 2006-02-10 2013-12-10 Veeco Instruments Inc. System and method for varying wafer surface temperature via wafer-carrier temperature offset
KR20070093493A (en) 2006-03-14 2007-09-19 엘지이노텍 주식회사 Susceptor and semiconductor manufacturing device
JP2007251078A (en) 2006-03-20 2007-09-27 Nuflare Technology Inc Vapor phase epitaxial growth device
DE102006018514A1 (en) 2006-04-21 2007-10-25 Aixtron Ag Apparatus and method for controlling the surface temperature of a substrate in a process chamber
US7959735B2 (en) 2007-02-08 2011-06-14 Applied Materials, Inc. Susceptor with insulative inserts
US8092599B2 (en) 2007-07-10 2012-01-10 Veeco Instruments Inc. Movable injectors in rotating disc gas reactors
JP2009088088A (en) 2007-09-28 2009-04-23 Sharp Corp Substrate treating device and method
JP5158093B2 (en) 2007-12-06 2013-03-06 信越半導体株式会社 Vapor growth susceptor and vapor growth apparatus
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
US8999106B2 (en) 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
JP5156446B2 (en) 2008-03-21 2013-03-06 株式会社Ｓｕｍｃｏ Susceptor for vapor phase growth equipment
USD600221S1 (en) 2008-03-28 2009-09-15 Tokyo Electron Limited Wafer boat
USD600222S1 (en) 2008-03-28 2009-09-15 Tokyo Electron Limited Wafer boat
JP2010028013A (en) 2008-07-24 2010-02-04 Sumco Corp Susceptor for vapor-phase growth device
KR101294129B1 (en) * 2008-08-29 2013-08-07 비코 인스트루먼츠 인코포레이티드 Wafer carrier with varying thermal resistance
JP5062144B2 (en) 2008-11-10 2012-10-31 東京エレクトロン株式会社 Gas injector
US20110049779A1 (en) * 2009-08-28 2011-03-03 Applied Materials, Inc. Substrate carrier design for improved photoluminescence uniformity
US8486726B2 (en) * 2009-12-02 2013-07-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier
US9324590B2 (en) * 2010-02-24 2016-04-26 Veeco Instruments Inc. Processing methods and apparatus with temperature distribution control
US8535445B2 (en) 2010-08-13 2013-09-17 Veeco Instruments Inc. Enhanced wafer carrier
KR101206924B1 (en) * 2011-02-08 2012-11-30 주식회사 엘지실트론 Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same
JP5712058B2 (en) 2011-06-03 2015-05-07 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
WO2013033315A2 (en) * 2011-09-01 2013-03-07 Veeco Instruments Inc. Wafer carrier with thermal features
TWI541928B (en) 2011-10-14 2016-07-11 晶元光電股份有限公司 Wafer carrier
DE102011055061A1 (en) 2011-11-04 2013-05-08 Aixtron Se CVD reactor or substrate holder for a CVD reactor
US20130186113A1 (en) 2012-01-20 2013-07-25 Pepsico, Inc. Method and Apparatus for Ice Harvesting
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
KR101496572B1 (en) 2012-10-16 2015-02-26 주식회사 엘지실트론 Susceptor for Epitaxial Growth And Epitaxial Growth Method
WO2014062000A1 (en) 2012-10-16 2014-04-24 주식회사 엘지실트론 Susceptor for epitaxial growing and method for epitaxial growing
CN102983093B (en) 2012-12-03 2016-04-20 安徽三安光电有限公司 A kind of graphite carrier for LED epitaxial wafer processing procedure
US10167571B2 (en) * 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
TWI609991B (en) 2013-06-05 2018-01-01 維克儀器公司 Improved wafer carrier having thermal uniformity-enhancing features

Also Published As

Publication number Publication date
TWI619843B (en) 2018-04-01
WO2014143703A1 (en) 2014-09-18
US10167571B2 (en) 2019-01-01
FR3003399B3 (en) 2015-08-07
US20140261187A1 (en) 2014-09-18
KR20150132486A (en) 2015-11-25
TW201441418A (en) 2014-11-01
DE202014002365U1 (en) 2014-07-01
JP2016519426A (en) 2016-06-30
FR3003399A3 (en) 2014-09-19
CN105051865B (en) 2019-05-10
CN203895428U (en) 2014-10-22
EP2973661A1 (en) 2016-01-20
KR20140005081U (en) 2014-09-24
EP2973661A4 (en) 2017-03-22
CN105051865A (en) 2015-11-11
TWM509419U (en) 2015-09-21

Similar Documents

Publication Publication Date Title
SG11201507485XA (en) Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
SG11201509970WA (en) Improved wafer carrier having thermal uniformity-enhancing features
SG10201802646PA (en) Chemical deposition apparatus having conductance control
SG11201610304SA (en) Design of susceptor in chemical vapor deposition reactor
SG10202002293XA (en) Single ald cycle thickness control in multi-station substrate deposition systems
EP2799589A4 (en) Vapor deposition apparatus having pretreatment device that uses plasma
SG10201400557WA (en) Chemical mechanical planarization for tungsten-containing substrates
SG11201606084RA (en) Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
GB2506969B (en) Thick polycrystalline synthetic diamond wafers for heat spreading applications and microwave plasma chemical vapour deposition synthesis techniques
EP3338299A4 (en) Process-specific wafer carrier correction to improve thermal uniformity in chemical vapor deposition systems and processes
PL2866246T3 (en) Vacuum coating and plasma treatment system, and method for coating a substrate
SG11201601275UA (en) Apparatuses, systems and methods for providing thermocycler thermal uniformity
SG10201608877QA (en) Narrow source for physical vapor deposition processing
PT2836622T (en) Microwave plasma chemical vapour deposition apparatus
GB2511418B (en) Substrate carrier
SG11201506364YA (en) Electrochemical deposition processes for semiconductor wafers
EP2938752A4 (en) Plasma enhanced chemical vapor deposition (pecvd) source
SG11201504014TA (en) Physical vapor deposition apparatus
SG11201508809SA (en) Wafer container with latching mechanism for large diameter wafers
EP2711442A4 (en) Heating assembly for vacuum deposition, and vacuum deposition apparatus comprising same
EP2661516A4 (en) Chuck for chemical vapor deposition systems and related methods therefor
EP2813597A4 (en) Crucible for vapor deposition, vapor deposition device, and vapor deposition method
SG11201604185PA (en) Carrier for polishing processing, method for manufacturing carrier for polishing processing, and method for manufacturingmagnetic-disk substrate
EP2838324A4 (en) Plasma generation device, vapor deposition device, and vapor deposition method
EP3072151A4 (en) Semiconductor wafer cleaning system