WO2014062000A1

WO2014062000A1 - Susceptor for epitaxial growing and method for epitaxial growing

Info

Publication number: WO2014062000A1
Application number: PCT/KR2013/009259
Authority: WO
Inventors: 강유진
Original assignee: 주식회사 엘지실트론
Priority date: 2012-10-16
Filing date: 2013-10-16
Publication date: 2014-04-24

Abstract

The present invention relates to a susceptor for epitaxial growing, which is for manufacturing an epitaxial wafer made by performing a reaction of a wafer and a source gas inside a chamber and growing an epitaxial layer, comprising: a pocket provided with an opening on which the wafer is arranged; a ledge portion for supporting the wafer; and a gas control member positioned on the outer circumferential portion of the upper surface of the susceptor opening, wherein the gas control member comprises a first gas control member which is formed on a predetermined area opposite a crystalline direction of the wafer (110), a second gas control member which is formed on a predetermined area opposite the crystalline direction of the wafer (100), and a third gas control member which is formed between the first gas control member and the second gas control member, wherein the first gas control member and the second gas control member are formed so that the heights thereof have a predetermined ratio, and wherein the first, second, and third gas control member are formed so that tilt angles thereof from the center of the wafer toward a susceptor direction are different from each other. As a result, when forming the epitaxial layer on a semiconductor wafer, gas flow can be controlled by forming the heights of devices for increasing/decreasing gas flow around the outer circumferential portion of the susceptor (gas control members) differently according to crystalline directions, thereby enabling control so that the thickness of the epitaxial wafer is uniformly formed.

Description

Susceptor for epitaxial growth and epitaxial growth method

FIELD OF THE INVENTION The present invention relates to susceptors for manufacturing epitaxial wafers, and more particularly to methods of manufacturing susceptors for controlling the flatness of wafer edges.

Silicon epitaxial wafers in which a dopant such as boron (B) is doped and a relatively small amount of impurities are doped on a silicon wafer having a low specific resistance to vapor-grow a silicon epitaxial layer having a high specific resistance have a high gathering capability and low stretch-up. Latch-up and high slip resistance at high temperatures make it widely used as a wafer for manufacturing LSI devices as well as MOS devices.

The quality items required for such an epitaxial wafer include flatness, degree of particle contamination, and the like on the surface of the epitaxial wafer including the base substrate and the epitaxial layer, and the epitaxial layer as an item on the epitaxial itself. Thickness uniformity, resistivity and its uniformity, metal contamination, lamination defect, slip dislocation, and the like.

Among these, the flatness has a great influence on the photolithography process, the chemical mechanical polishing (CMP) process, and the bonding process for the silicon on insulator (SOI) wafer during the manufacturing of the semiconductor device on the epitaxial wafer. In particular, edge roll-off (ERO), in which the edge of the wafer is pushed up or down, has a great influence on the defocus in the photolithography process, the polishing uniformity in the CMP process, and the poor bonding in the SOI bonding process. Since the flatness of the wafer edge is becoming more important in the quality items of the epitaxial wafer as the diameter becomes larger than 300 mm, it is necessary to identify the cause of the distortion of the flatness of the edge of the epitaxial wafer.

The semiconductor wafer serving as the substrate is mounted inside the chamber of the epitaxial manufacturing apparatus at a predetermined rotational speed so as to obtain a uniform film thickness as a whole, thereby forming an epitaxial layer according to the rotation. Thus, the crystal orientation of the wafer always changes with respect to the epitaxial manufacturing apparatus. That is, since the wafer is fixed to a susceptor having a pocket, the crystal orientation of the wafer is fixed constantly with respect to the susceptor.

The flatness of the wafer edge rotates with the wafer placed on the susceptor, resulting in a gradual increase and decrease depending on the crystal orientation.

1 is a view showing the crystal orientation of the wafer, Figure 2 shows the thickness of the epitaxial layer deposited according to the orientation of the wafer when using a susceptor with a constant pocket height for each orientation when the epitaxial layer is deposited on a conventional wafer It is a graph.

First, referring to FIG. 1, when the 3 o'clock direction of the (100) plane of the wafer is 0 degrees, the 0 degree direction becomes a <110> crystal orientation, and a direction shifted 45 degrees with respect to the <110> crystal orientation is < 100> crystal orientation. That is, the <100> and <110> crystal orientations exhibit the same crystal orientation at intervals of 90 degrees.

Referring to FIG. 2, it is a graph showing a portion where the variation of the thickness of the epitaxial layer deposited according to the orientation of the wafer of FIG. 1 is greatest. For wafers with a diameter of 300 mm, in particular, the thickness of the epitaxial layer of the edge portion 149 mm from the center of the wafer is formed thickest at around 180 degrees of the wafer and thinnest at 135 and 225 degrees. The result was obtained.

The growth rate of the epitaxial layer varies depending on the characteristics of the crystal plane according to the orientation of the wafer, and variations in the thickness of the epitaxial layer at the wafer edges occur.

This, in turn, means that the growth of the epitaxial layer increases in the <110> crystal orientation of the wafer and the growth of the epitaxial layer decreases relatively in the <100> crystal orientation of the wafer.

Therefore, the interval of the thickness of the epitaxial layer occurs at the edge portion of the wafer at a 45 degree interval. As the variation of the thickness increases, the quality of the wafer is affected and the semiconductor element is formed. There are many problems in this regard.

The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a susceptor for improving the flatness of the epitaxial wafer surface, in particular for uniformly controlling the thickness of the edge portion.

The present invention provides a susceptor for manufacturing an epitaxial wafer in which an epitaxial layer is grown by reacting a wafer and a source gas in a chamber, the susceptor comprising: a pocket having an opening in which the wafer is disposed; A ledge portion on which the wafer is supported; And a gas regulating member positioned at an outer circumferential portion of the upper surface of the susceptor opening, wherein the gas regulating member includes a first gas regulating member formed in a predetermined region facing the wafer crystal direction, and the wafer < A second gas regulating member and a third gas regulating member formed between the first gas regulating member and the second gas regulating member in a predetermined region facing the crystal direction; The height of the second gas regulating member is formed to have a predetermined ratio, and the first, second and third gas regulating members are formed so that the inclination from the center direction of the wafer to the susceptor direction is different from each other. do.

According to the present invention, when the epitaxial layer is formed on the semiconductor wafer, the gas flow can be controlled by differently forming the height of the gas flow increasing and decreasing device (gas control member) on the outer periphery of the susceptor according to the crystal orientation so that the epitaxial layer is epitaxial. The thickness of the wafer can be controlled to be uniform.

In addition, by changing the height and angle of the gas adjusting member according to the crystal orientation of the wafer, the gas flow can be finely adjusted for each region of the wafer, so that the thickness of the epitaxial wafer can be constantly controlled.

In addition, according to the susceptor provided with the gas adjusting member according to the embodiment of the present invention, it is possible to provide a semiconductor wafer with a uniform thickness of the edge portion, thereby improving the quality and production yield of the semiconductor wafer on which the element is formed. have.

1 shows a crystal orientation of a semiconductor wafer

2 is a view showing the epilayer thickness according to the wafer crystal orientation when using a conventional susceptor

3 is a plan view showing a region in which the thickness of the wafer epitaxial layer increases or decreases depending on the crystal direction of the wafer;

4 is a cross-sectional view showing the structure of a general susceptor for manufacturing an epitaxial wafer.

5 is a view showing one end surface of a susceptor according to an embodiment of the present invention.

6 is a graph measuring epitaxial thickness of the wafer edge portion according to Comparative Example 1

7 is a graph measuring epitaxial thickness of the wafer edge portion according to Comparative Example 2;

8 is a graph measuring the epitaxial thickness of the wafer edge portion according to the embodiment

9 is a cross-sectional view showing a gas adjusting member for varying the gas flow according to another embodiment of the present invention

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but are not limited or limited by the embodiments of the present invention. In describing the present invention, a detailed description of known functions or configurations may be omitted to clarify the gist of the present invention.

The semiconductor wafer is supported and rotated by a susceptor provided inside the chamber of the epitaxial manufacturing apparatus at a predetermined rotation speed to form a uniform film thickness. In general, since the growth rate of the epitaxial layer depends on the flow rate of the epitaxial growth gas, the concentration of the silicon component, the temperature, and the like, a member capable of changing the above elements is provided near the inner peripheral surface of the opening of the pocket on which the wafer is supported. It is desirable to. In this embodiment, in order to control the flow rate of the gas flowing along the edge to improve the flatness of the peripheral portion of the wafer, an apparatus for controlling the epilayer thickness for each crystal orientation through a gas adjusting member formed on the upper surface near the opening of the susceptor And to provide a method. In addition, various comparative examples are intended to control the difference in the optimized height of the gas control member formed differently for each crystal orientation.

In the case of silicon single crystal, in the (100) crystal, the growth rate of the epitaxial layer is known to depend on the crystal orientation, and due to the change in the growth rate, the thickness of the epitaxial layer increases and decreases at 90 degrees. do.

3 is a plan view illustrating a region in which the thickness of the wafer epitaxial layer increases or decreases along the crystal direction of the wafer.

Referring to FIG. 3, assuming that the 12 o'clock direction is 0 degrees with respect to the center of the wafer, a region having a predetermined angle with respect to 0 degrees, 90 degrees, 180 degrees, and 270 degrees has a relatively thick wafer epi layer thickness. The predetermined area on the basis of the above-mentioned 45 degrees, 135 degrees, 225 degrees, and 315 degrees represents a region where the thickness of the wafer epi layer is relatively thin. Of course, as the wafer rotates, the above angle may vary depending on the crystal orientation.

In the following description, an area within a predetermined range on the basis of the 0 degrees, 90 degrees, 180 degrees, and 270 degrees is an area within a predetermined range on the basis of the Higher region, 45 degrees, 135 degrees, 225 degrees, and 315 degrees. Is the lower region, and the region between the higher region and the lower region is referred to as a buffer region. Specifically, the higher region, the lower region, and the buffer region mean regions on the susceptor where the gas regulating member is formed to control the flatness of the wafer edge portion. That is, the <100> crystal direction of the wafer may be defined as a lower region, the <110> crystal direction may be defined as a higher region, and a predetermined region between the lower region and the higher region may be defined as a buffer region.

4 is a view showing the structure of a susceptor for producing an epitaxial wafer. Referring to FIG. 4, the semiconductor wafer 5 is supported by a ledge portion 41 formed in a pocket 20, which is an opening of the susceptor 10. The pocket 20 is basically formed in a circular concave shape having a flat bottom and includes the ledge portion 41 and a bottom portion 42 formed to have a step with the ledge portion 41. The wafer can be accommodated in the concave shape of the inner side of 20. That is, the shape of the pocket is defined by the inner circumferential surface 21 and the bottom surface, the ledge portion 41 has a tapered top surface extending only a predetermined length from the inner circumferential surface 21 to the inner circumferential side, and at the bottom surface along the circumferential direction of the opening. Is formed. The ledge 41 has a structure in which the upper surface has a tapered surface and becomes the bottom surface of the pocket in order to keep the contact of the semiconductor wafer as small as possible and to securely support the wafer 5.

The susceptor as described above is provided inside the reaction chamber (not shown), and the epitaxial layer is formed on the wafer 5 while the epitaxial growth gas is injected. Here, the gas injection port is provided on the outer circumferential side (not shown) of the susceptor, and the source gas flows in the inner circumferential direction in which the wafer is located at the outer circumference of the susceptor. That is, the source gas reaches the wafer through the top surface 22 of the susceptor opening, and the length of the inner circumferential surface of the pocket in which the opening is inclined at right angles may be defined as the height of the pocket H, and the height of the pocket ( H) is a factor that affects the flow of gas.

5 is a view showing one end surface of the susceptor according to the embodiment of the present invention.

Referring to FIG. 5, in the present invention, the gas adjusting member 25 is formed on the upper surface 22 of the susceptor opening to adjust the gas flow rate flowing from the outer periphery of the susceptor to the wafer direction, so that the variation in the thickness of the wafer edge portion is particularly reduced. We propose a susceptor to reduce it.

Hereinafter, the preferred structure of the susceptor for carrying out the present invention through comparison with the comparative example and the embodiment will be described.

(Comparative Example 1)

In Comparative Example 1, a susceptor in which the height H of the susceptor's pockets is uniformly formed in each direction of the wafer crystal in FIG. 4 was used. An epitaxial deposition process on the wafer was performed using the susceptor. After the measurement, the thickness of the epi layer on the wafer edge is measured.

6 is data according to Comparative Example 1, specifically, the difference in the thickness of the epi layer was measured at the edge portion 149 mm of the 300 mm diameter wafer, and thus the epi layer thickness of the wafer edge portion was measured for each crystal orientation. .

Referring to FIG. 6, the thickness of the epi layer tends to increase in the <110> crystal directions of the wafer at 0 degrees, 90 degrees, 180 degrees, and 270 degrees, and 45 degrees, 135 degrees, and 225 in the <100> crystal directions. In FIG. 315, it can be seen that the thickness of the epi layer tends to decrease, and the maximum deviation of the epi layer thickness in the entire region of the wafer edge at the 149 mm point is 173.44 nm. Accordingly, it can be seen from Comparative Example 1 that the deviation of the epitaxial layer thickness is about 173.44 nm in the entire region of the wafer edge at 149 mm.

(Comparative Example 2)

In Comparative Example 2, the height (H) of the pocket of the susceptor is differently formed in the higher region, the lower region, and the buffer region in FIG. 4, and the thickness of the epitaxial layer on the wafer edge is measured after the epitaxial deposition process on the wafer. It is measured.

That is, in order to find an optimized ratio of the pocket height H of the lower region and the pocket height H of the upper region to be proposed in the present invention, in Comparative Example 2, the pocket height H of the lower region is increased by 57%. The pocket height H of the higher region was formed.

To derive specific experimental values, the pocket height H of the lower region is 0.7 mm, the pocket height H of the upper region is 1.1 mm which increases the pocket height H of the lower region by 57%, and the pocket height of the buffer region. (H) applies any value between the Lower and Higher regions.

Here, the height (H) of the pocket may be a height including the height of the gas adjusting member. Specifically, the height of the pocket may include the height of the first gas regulating member formed in the Higher region, the second gas regulating member formed in the Lower region and the third gas regulating member formed in the Buffer region.

7 is a graph measuring epitaxial thickness of the wafer edge portion according to Comparative Example 2. FIG.

Referring to FIG. 7, the minimum deviation of the epitaxial layer thickness of the entire edge portion of the wafer 149 mm was 209.05 nm.

(Example)

In FIG. 4, the height H of the susceptor pocket is formed differently in the higher region, the lower region, and the buffer region in FIG. 4 to measure the thickness of the epilayer on the wafer edge after performing the epilayer deposition process on the wafer. It is.

The present invention is to control the difference between the pocket height of the lower region and the pocket height of the upper region, to provide an optimized ratio of the pocket height of the lower region and the higher region that can make the thickness of the wafer edge portion uniform.

In this embodiment, the pocket height H of the higher region is increased by 25% compared to the pocket height H of the lower region, and the thickness variation of the wafer edge is evaluated accordingly.

Specifically, the pocket height H of the lower region is 0.8 mm, the pocket height H of the upper region is 1.0 mm which increases the pocket height H of the lower region by 25%, and the pocket height H of the buffer region is Any value between the Lower and Higher regions was applied.

Here, the height (H) of the pocket may be a height including the height of the gas control member formed on the outer peripheral portion of the upper surface of the susceptor opening. Specifically, the height of the pocket may include the height of the first gas regulating member formed in the Higher region, the second gas regulating member formed in the Lower region and the third gas regulating member formed in the Buffer region.

8 is a graph measuring the epitaxial thickness of the wafer edge portion according to the embodiment.

Referring to FIG. 8, the minimum deviation of the epitaxial layer thickness was 128.75 nm in all sections of the wafer edge at 149 mm.

First, the data of Comparative Example 1 and Example are compared. In the case of using the susceptor in which the heights of the upper and lower regions are formed differently according to the crystal direction of the wafer, that is, in the embodiment in which the gas adjusting member is formed in each region to vary the height of the pocket, the wafer edge thickness variation is different. It is 128.75 nm, and the comparative example 1 which formed all the same height of the pocket according to the crystal direction of a wafer is 173.44 nm. That is, it can be seen that the embodiment improved the thickness variation of the wafer edge portion by about 26% = (1- (128.75 / 173.44))% compared to Comparative Example 1.

In addition, the data of Comparative Example 1 and Comparative Example 2 are compared. In Comparative Example 1 in which the heights of the pockets were all formed identically according to the crystal direction of the wafer, the thickness variation of the wafer edge was 173.44 nm, and the heights of the Higher and Lower regions were formed differently according to the crystal direction of the wafer. In the case, the wafer edge portion thickness variation is 209.05 nm. That is, it can be seen that in Comparative Example 2, the wafer edge thickness variation was inferior by about 19% = (1- (209.05 / 173.44))% compared to Comparative Example 1.

Comparative Example 2 increased the height of the higher area pocket by 157% compared to the height of the lower area pocket, but the evaluation results show that the thickness variation is intensified compared to that of Comparative Example 1, which does not have a step difference for each area.

Therefore, in setting the difference between the pocket heights of the upper and lower regions of the susceptor, it can be seen that there is a section in which the thickness variation of the wafer edge portion is improved according to the ratio of the heights. That is, it is preferable to increase the pocket height of the higher region by 125% as compared to the pocket height of the lower region as in the embodiment, and to make it smaller than 157% can control the wafer edge thickness more uniformly. Can be.

That is, the preferred height of the gas adjusting member to be formed in the Higher region, the Lower region and the Buffer region in the present invention can be set through Comparative Examples 1 and 2 and Examples. The gas regulating member is formed to increase or decrease the flow of gas flowing in the wafer, and the height of the pocket is set including the height of one side of the gas regulating member.

In the present invention, the height of the pocket including the first gas regulating member formed in the higher region may be formed in a range of 115% to 157% relative to the height of the pocket including the second gas regulating member formed in the lower region. In addition, it is preferable that the height of the pocket formed in the higher region is 125% as compared with the height of the pocket formed in the lower region as in the evaluation result of the above-described embodiment. The height of the pocket may be a height including the height of the gas adjusting member as described above.

The buffer region is formed to have a value between the height values of the high region and the lower region, but the buffer region does not have a constant value so that a step is not generated so that gas flows between the high region and the lower region. It is preferably set to any value having a slope.

On the other hand, as the thickness of the epi layer to be deposited on the wafer increases, the thickness variation of the epi layer on the wafer edge portion tends to increase. As the thickness of the epi layer increases, other quality aspects of backside deposition increase, but this can be reduced as the pocket height increases. Therefore, according to the thickness of the epi layer to be formed, the height of each region pocket to be formed in the present invention may be raised or lowered as a whole.

That is, in the above embodiment, the pocket thickness of the lower region was evaluated to be 0.8 mm, and the pocket thickness of the higher region was 1 mm. However, the present invention is not limited thereto. If it is satisfied, the epilayer flatness of the wafer edge portion can be improved.

To adjust the pocket height of the higher region, the pocket height may be adjusted by coating silicon on the susceptor. Depending on the thickness of the epi layer to be formed, silicon is deposited in the lower region and the higher region on the susceptor, and if the height is to be adjusted again, the coated silicon may be removed by HCL etching.

If the height of the pocket is formed for each crystal orientation as described above, the flatness of the thickness of the epitaxial layer deposited on the wafer can be made uniform. However, even if there is only one factor that affects the flatness of the wafer, the yield of the wafer is lowered when it is changed, and thus finer adjustment is required. To this end, the present invention proposes another embodiment of the gas adjusting member formed by the crystal orientation zone of the wafer while setting the height of the pocket by dividing the crystal orientation of the wafer for each zone.

9 is a sectional view showing a gas adjusting member according to another embodiment.

Referring to FIG. 9, a gas adjusting member 30 is formed on the upper surface 22 of the opening of the pocket 20 provided in the susceptor 10 to control the flow of gas. The gas regulating member 30 is formed to be inclined from the outer circumferential end of the susceptor to the end side or the edge side of the wafer direction to reduce the flow of gas flowing from the outer circumference of the susceptor 10 to the wafer direction. do. That is, the gas regulating member 30 may be formed in a (110) crystal orientation, that is, a higher region where the thickness of the epi layer is relatively thick, and the height H2 of the inner pocket is greater than the height D2 of the outer pocket. Larger, the epi layer can be made thinner because the flow of gas is reduced than in other regions.

The gas regulating member 30 proposed in FIG. 9 has a structure in which the height of the pockets is sequentially changed, and since the source gas can flow fluidly, the epitaxial layer thickness can be more finely adjusted, which is advantageous in improving the thickness variation.

In addition, the gas adjusting member 30 of FIG. 9 may be simultaneously formed in the higher region and the lower region. In order to increase the overall thickness of the edge epitaxial film of the wafer, the gas adjusting member 30 is inclined toward the center of the wafer in the susceptor direction to change the flow rate of the gas as shown in FIG. 9. It may be formed in the region and the lower region. At this time, the inclination of the first gas regulating member formed in the higher region is made larger than the inclination of the second gas regulating member formed in the lower region, thereby controlling the variation in the thickness of the epitaxial film at the edge portion of the wafer to be increased. have.

Similarly, in order to reduce the overall thickness of the edge epitaxial film of the wafer, the gas regulating member 30 is inclined from the center direction of the wafer to the susceptor direction so as to reduce the flow rate of the gas. It may be formed in the lower region. At this time, the inclination of the second gas regulating member formed in the lower region is made larger than the inclination of the first gas regulating member formed in the higher region, so that the variation in the thickness of the epitaxial film of the edge portion of the wafer to be reduced can be controlled. have.

In addition, the gas control member may be provided in a stepped, trapezoidal, triangular shape according to the need to increase or decrease the gas flow.

Embodiments of the various gas regulating members proposed in the present invention may be applied to reduce the variation in the thickness of the edge portion appearing for each orientation of the epitaxial wafer. When the gas regulating member decreases the flow rate of gas, the gas regulating member is formed in the high region of the <110> crystal orientation, and the case in which the gas flow rate is increased is formed in the Lower region of the <100> crystal orientation. The gas regulating member for reducing the gas flow rate may be formed only in the crystal orientation region, and the gas regulating member may not be formed in the <100> crystal orientation region and the buffer region, and vice versa.

This is because the factors affecting the flattening of the edges of the wafer are various, and by arranging the gas adjusting member flexibly as described above, it is possible to finely adjust only the place where the thickness variation of the epi layer formed on the wafer is severe.

In the present invention, the case where the diameter of the wafer is 300 mm has been described as an example. However, the present invention is not limited thereto, and the present invention may be applied even when the diameter of the wafer is further expanded to 300 mm or more. In addition, the crystal orientation is also described with respect to <100>, <110>, but can be applied to both the [110] direction and [100] direction having the same crystal characteristics.

According to the susceptor for epitaxial manufacturing of the present invention, when the epitaxial layer is formed on a semiconductor wafer, the gas flow can be controlled by forming a gas flow increasing and decreasing device (gas regulating member) with different heights for each crystal orientation at the outer periphery of the susceptor. The thickness of the epitaxial wafer can be controlled to be constant according to the diameter.

In addition, by changing the height and step of the gas adjusting member according to the crystal orientation of the wafer, the gas flow can be finely adjusted for each region of the wafer, so that the thickness flatness of the epitaxial wafer can be constantly controlled.

In addition, according to the susceptor according to the embodiment of the present invention, it is possible to provide a semiconductor wafer with uniform edge flatness, thereby improving the quality and production yield of the semiconductor wafer on which the device is formed.

In the present invention, the epitaxial growth of the silicon wafer 100 surface has been described as an example, but the present invention is not limited thereto, and is used for the epitaxial manufacturing apparatus of all materials having an epitaxial growth rate with crystal orientation dependence, or used in the apparatus. It can be used in susceptors.

The present invention has been described above with reference to the preferred embodiments, which are merely examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains do not depart from the essential characteristics of the present invention. It will be appreciated that various modifications and applications are not possible that are not illustrated above. For example, each component specifically shown in the embodiment of the present invention can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Since this embodiment can be implemented in an epitaxial growth apparatus for producing an epitaxial wafer, there is industrial applicability thereof.

Claims

A susceptor for manufacturing an epitaxial wafer in which a epitaxial layer is grown by reacting a wafer and a source gas in a chamber,

A pocket having an opening in which the wafer is disposed;

A ledge portion on which the wafer is supported; And

And a gas adjusting member positioned at an outer circumferential portion of the upper surface of the susceptor opening.

The gas regulating member

A first gas regulating member formed in a predetermined region facing the wafer crystallographic direction, a second gas regulating member and the first gas regulating member disposed in a predetermined region facing the wafer crystallographic direction; A third gas regulating member formed between the second gas regulating members,

The height of the first gas control member and the second gas control member is formed to have a predetermined ratio,

The first, second and third gas regulating members are epitaxial growth susceptors, characterized in that the inclination from the center direction of the wafer to the susceptor direction is different from each other.
The method of claim 1,

The first gas regulating member is formed on the susceptor having a predetermined angle with respect to the center of the wafer, and the second gas regulating member is formed on the susceptor having a predetermined angle with respect to the center of the wafer. An epitaxial growth susceptor characterized by the above-mentioned.
The method of claim 1,

And the first and second gas regulating members are formed on the susceptor at intervals of 90 degrees in the crystal direction of the wafer.
The method of claim 1,

The height of the first gas control member is epitaxial growth susceptor, characterized in that formed by a predetermined ratio higher than the height of the second gas control member.
The method of claim 4, wherein

The height of the first gas control member is epitaxial growth susceptor, characterized in that formed by 110 to 130% higher than the height of the second gas control member.
The method of claim 4, wherein

The height of the first gas control member is epitaxial growth susceptor, characterized in that formed by 120 to 130% higher than the height of the second gas control member.
The method of claim 4, wherein

The height of the first gas control member is epitaxial growth susceptor, characterized in that formed by 0.1 ~ 0.3 mm higher than the height of the second gas control member.
The method of claim 4, wherein

The height of the first gas control member is epitaxial growth susceptor, characterized in that formed by 0.15 ~ 0.25 mm higher than the height of the second gas control member.
The method of claim 4, wherein

The height of the first gas control member is epitaxial growth susceptor, characterized in that formed by 2mm higher than the height of the second gas control member.
The method of claim 1,

The height of the third gas control member is epitaxial growth susceptor, characterized in that formed between the value of the height of the adjacent region.
The method of claim 1,

The first gas regulating member is a silicon deposition film having a predetermined thickness to reduce the gas flow rate, and the second gas regulating member is a silicon deposition film having a predetermined thickness to increase the gas flow rate. Dragon susceptor.
The method of claim 1,

The first gas regulating member is an epitaxial growth susceptor, characterized in that the structure inclined in the susceptor direction from the center direction of the wafer to reduce the gas flow rate.
The method of claim 1,

The second gas regulating member is an epitaxial growth susceptor, characterized in that the structure inclined toward the center of the wafer in the susceptor direction to increase the gas flow rate.
The method of claim 1,

The first gas regulating member and the second gas regulating member are structures inclined from the center direction of the wafer to the susceptor direction to reduce the flow rate of the gas, and the inclination of the first gas regulating member is An epitaxial growth susceptor, characterized in that greater than the inclination.
The method of claim 1,

The first gas regulating member and the second gas regulating member are structures inclined from the susceptor direction toward the center of the wafer in order to increase the flow rate of the gas, and the inclination of the second gas regulating member is An epitaxial growth susceptor, characterized in that greater than the inclination.
A susceptor for manufacturing an epitaxial wafer in which a epitaxial layer is grown by reacting a wafer and a source gas in a chamber,

A pocket having an opening in which the wafer is disposed;

A ledge portion on which the wafer is supported; And

And a gas adjusting member positioned at an outer circumferential portion of the upper surface of the susceptor opening.

The gas adjusting member

A first gas regulating member formed in a predetermined region facing the wafer crystallographic direction, a second gas regulating member and the first gas regulating member disposed in a predetermined region facing the wafer crystallographic direction; A third gas regulating member formed between the second gas regulating members,

The height of the first gas control member and the second gas control member epitaxial growth susceptor is formed to have a predetermined ratio.
An epitaxial deposition apparatus comprising the susceptor of any one of claims 1 to 16.