JPS60173852A - Substrate holder for wafer treatment - Google Patents

Abstract

PURPOSE:To improve the efficiency of heating by a method wherein a susceptor is made of a substance which passes infrared rays or visible rays and ultraviolet rays and formed into an aperture section in its upper surface larger than the diameter of a wafer and into a frame that holds the outer periphery of the wafer. CONSTITUTION:The susceptor 1 is made of a substance which passes infrared rays and/or visible rays and ultraviolet rays. The wafer-containing section 2 opened to a diameter slightly larger than the diameter of the wafer 10 is formed in the upper side of the frame 5, and the frame bottom 4 integrally formed is arranged in the lower side. A wafer-holding section 3 projects in the periphery of the section 2 in annular form so as to have a diameter slightly smaller than the diameter of the wafer 10, and so as to be mountaineous in cross-section. This construction enables the wafer 10 to be irradiated uniformly in the upper and lower surfaces on arrangement of light sources above and below the susceptor 1, leading to its direct and efficient heating.

Description

[Detailed Description of the Invention] (Field of Application) The present invention relates to a substrate holder for wafer processing, and in particular, wafers that serve as substrates for various semiconductors can be heated to any temperature or subjected to chemical treatment. The present invention relates to a substrate holder for wafer processing, which is suitable for processing.

(Prior art) As is well known, wafers that serve as substrates for various semiconductors include
Various processes are performed. The above-mentioned processing is, for example, removing unnecessary resist on the wafer surface, etching the wafer surface, or annealing the wafer.i When the wafer is not annealed, the wafer is heated at room temperature or higher for 1400 ms. It is necessary to heat the wafer to a predetermined temperature of (° C.) or lower, and when removing unnecessary resist or etching, heat may be applied to the wafer in order to advance the reaction. Therefore, common semiconductor processing equipment is provided with means for heating the wafer.

The treatment is performed by supplying a reactive gas into the apparatus, and the reactive gas often has corrosive properties. Therefore, the reaction gas contact surfaces in the apparatus must be highly resistant to corrosion and must not contaminate the wafer to be processed.

In addition, some semiconductor processing apparatuses have a configuration in which each wafer to be processed is placed on a holding frame called a substrate holder (hereinafter referred to as a susceptor) and a reaction is performed in a reactor. In this case, the susceptor must be made of a material with strong corrosion resistance.

In the conventional apparatus, the susceptor is molded from graphite and further has a silicon carbide coating formed on its surface. In this case, the susceptor is heated using external incandescent light from an incandescent fission 1 or a high-frequency heating station, and the wafer is heated by heat conduction from the susceptor.

However, since this method indirectly heats the wafer, the heating efficiency of the heating device is poor and the wafer temperature rise/fall response speed is slow.

Furthermore, since the wafer is heated by heat conduction only from one surface in contact with the susceptor, a temperature difference is generated between the contact surface of the susceptor and the surface opposite to the contact surface, which improves the processing of the wafer. The disadvantage is that it is difficult to carry out.

(Purpose) The present invention has been made to eliminate the above-mentioned drawbacks, and its purpose is to directly and efficiently absorb heat supplied from a wafer heating device to both main surfaces of the wafer. An object of the present invention is to provide a susceptor for wafer processing that can be used for wafer processing.

(Summary) In order to achieve the above-mentioned object, the present invention comprises forming a substrate for processing a toner out of a material that transmits infrared rays and/or visible light and ultraviolet rays, and having a A frame forming a wafer storage part having a frontage larger than the diameter of the wafer, and means formed in the frame to lock the outer peripheral part of the wafer stored in the wafer storage part. It is distinctive in that it incorporates the following.

(Example) The present invention will be described in detail below with reference to the drawings.

FIG. 1 is a schematic vertical IIJi plane view of a first embodiment of the present invention.

In the figure, a susceptor 1 is formed of a material that can transmit infrared rays a3 and/or visible light and ultraviolet rays. For example, fused silica can be used as the material.

Since the molten stone is resistant to ozone and other corrosive gases, it does not contaminate the C wafer to be processed.

The frame body 5 is a thick plate-like body, and a wafer storage part 2 is formed on the upper side thereof so as to have an opening having a diameter slightly larger than the diameter of the I-wafer 10. Therefore, below the wafer storage section 2, the frame bottom 4, which is integrally formed with the frame 5, is disposed.

A wafer locking portion 3 protrudes from the periphery of the wafer storage portion 2 in an annular shape with a diameter slightly smaller than the diameter of the wafer 10 and a chevron-shaped cross section.

Since the wafer locking portion 3 is for placing the wafer 10 thereon, it is not necessarily formed in an annular shape, but is arranged on a circumference having a diameter slightly smaller than the diameter of the wafer 10. There may be at least three protrusions.

In the first embodiment of the present invention having the above configuration,
As a means for heating the wafer 10 placed on the wafer retaining portion 3 of the susceptor 1, a light source capable of supplying infrared rays and/or visible light and ultraviolet rays is used.

That is, if the light sources are placed above and below the susceptor 1, infrared and/or visible light and ultraviolet rays can pass through the susceptor 1.
The upper and lower surfaces of the wafer 10 are uniformly irradiated. Therefore, the wafer 1n old ID Ritsu-F-M Shuhakudoh
Kubutsu male 7〉 wipes and leaves.

Furthermore, in the case where the wafer locking portion 3 is formed in an annular shape according to an embodiment of the present invention, the space formed between the lower surface of the wafer 10 and the frame bottom portion 4 is almost free from the outside air. It will be sealed.

Therefore, the atmosphere in the space and the atmosphere in the furnace of the semiconductor processing apparatus do not mix with each other, so that less heat is radiated from the wafer 10, and therefore the heating efficiency of the wafer 10 is high.

FIG. 2 is a schematic cross-sectional view of a second embodiment of the invention.

In the figure, the same reference numerals as in FIG. 1 represent the same parts.

FIG. 2 is the same as FIG. 1 with the frame bottom 4 removed. In the embodiment of the bookcase 2 as well, both surfaces of the wafer 10 can be irradiated with infrared rays J3 and/or visible light and ultraviolet rays, as in the case of FIG.

In this case, since the frame bottom 4 is not provided, the atmosphere inside the furnace can come into contact with the lower surface of the wafer 10. Therefore, when performing surface treatment on both sides of a wafer using a reactive gas - for example, when washing a wafer using ozone gas, it is necessary to perform the treatment twice on the front and back sides of the wafer. Since there is no waste, the process can be carried out in a short time and at low cost.

In the embodiment of the second embodiment, the wafer 10 placed on the susceptor 1 has an outer peripheral portion that contacts the wafer locking portion 3.
Infrared rays, visible rays, and ultraviolet rays can be directly irradiated without going through the frame bottom 4, except in the vicinity.

Therefore, the susceptor 1 is particularly suitable for infrared and/or
Alternatively, it does not need to be formed of a material that transmits visible light and ultraviolet rays, but may be formed of a translucent or opaque material, such as silicon or a composite material of silicon and silicon carbide.

FIG. 3 shows III! of the third embodiment of the present invention! Abbreviation ff1i
This is a front view.

In the figures, the same reference numerals as in FIGS. 1 and 2 refer to the same or equivalent parts. In FIG. 3, the wafer locking part 3 in FIG. 2 is removed, and the wafer storage part 2 is roughly arranged so that the upper surface of the susceptor 1 has an opening larger than the diameter of the wafer 10, and the lower surface of the susceptor 1 has an opening larger than the diameter of the wafer 10. The LC is formed in a shape having an opening smaller than the diameter of the wafer 10. Furthermore, the wafer storage section 2
forms part of the side of a right circular cone.

Therefore, if the wafer 10 is lowered from above the wafer storage section 2 so as to remain parallel to the susceptor 1, the wafer 10 can be stably held on the side surface of the frame 5 facing the wafer storage section 2. It can be locked to.

In the third embodiment, the wafer 1o can be heated under almost the same conditions as in the second embodiment described above.

Now, as described above, in the first to third embodiments of the present invention, the susceptor 1 is formed of a material that passes infrared rays and/or visible light, and ultraviolet rays. It is possible to directly irradiate with infrared rays d3 and/or visible light and ultraviolet rays, and to heat efficiently.

However, in the above-mentioned example, the susceptor 1 is not heated because infrared rays and/or visible light and ultraviolet rays pass therethrough, and a temperature difference occurs between the susceptor 1 and the wafer 10. Furthermore, since the wafer 10 is in contact with the susceptor 1 at its outer periphery, there is a risk that the heat of the wafer 10 may be conducted to the susceptor 1.

Due to the conduction, the outer circumference of the wafer 10 and the! iIU
#l'//i/Am+51=77'1lm1-4n#,
IThJ, l! In some cases, the processing of Ik+J---C10 cannot be performed satisfactorily.

An example of the improvement is shown below.

FIG. 4 is a schematic cross-sectional view of a fourth embodiment of the invention.

In the figure, the same reference numerals as in FIG. 1 represent the same or equivalent parts.

In FIG. 4, the frame bottom 4 in FIG. 1 is formed into a concave lens shape. To this end, the upper surface of the frame bottom 4 is processed so that its thickness increases toward its outer periphery.

Infrared rays, visible light, and ultraviolet rays irradiated from below the susceptor 1 are refracted toward the contact point between the wafer 10 and the wafer locking portion 3, for example, in the direction of the arrow, and are refracted near the contact point of the wafer 1o. The light is focused on.

Therefore, the vicinity of the contact point of the wafer 10 is like a falcon (
Because of the heating Ah 7 and L-case, even if heat is transferred from the wafer 10 to the wafer locking part 3, the temperature decreases near the contact point (=l) and the Uneven heating of the wafer 10 can be prevented.

FIG. 5 is a schematic cross-sectional view of a fifth embodiment of the invention.

In the figure, the same reference numerals as in FIG. 4 represent the same or equivalent parts.

In FIG. 5, the concave lens-shaped forming portion in FIG. 4 is also provided on the lower surface of the susceptor 1. In FIG. That is, the frame bottom 4 is formed in an annular shape such that the thickness of the frame bottom 4 increases from the center of the frame bottom 4 to a position almost directly below the annularly formed wafer locking part 3. The frame body 5 is formed so that its thickness decreases from a position substantially directly below the wafer locking portion 3 toward the outer periphery of the frame body 5.

Infrared and/or visible light and ultraviolet rays irradiated from below the susceptor 1 are incident on the wafer 10 and the wafer locking portion when they are incident inside a position almost directly below the annularly formed wafer locking portion 3. Toward the point of contact with 3,
- For example, if the light is refracted in the direction of arrow B and is incident outside the position substantially directly below the wafer retaining portion 3, it may also be directed toward which contact point between the wafer 10 and the wafer retaining portion 3;
- For example, it is bent in the direction of arrow C.

Therefore, even in the case of J3 in the fifth embodiment, it is possible to prevent a temperature drop near the contact point A and uneven heating of the wafer 10, as in the fourth embodiment.

In the fourth and fifth embodiments, the concave lens-shaped portion for concentrating infrared rays, visible rays, and ultraviolet rays near the contact portion of the wafer 10 with the wafer locking portion 3 is formed into a frame. Although it has been described that it is formed on the upper surface of the body bottom portion 4 or the lower surface of the susceptor 1, the concave lens-shaped portion is formed on the lower surface of the susceptor, almost directly below the annularly formed wafer locking portion 3. Only on the inside from the position, or only on the outside from the position almost directly below the annularly formed wafer engagement part 3 on the bottom surface of the susceptor 1, and furthermore, on both the top surface of the frame bottom 4 and the bottom surface of the susceptor 1. It is okay to form.

Further, in the fourth and fifth embodiments, a concave lens-shaped forming part is added to the first embodiment, but the concave lens-shaped forming part is different from that in the second and third embodiments. Needless to say, it can also be applied.

That is, in FIGS. 2 and 3, by forming the lower surface of the frame 5 into a concave lens shape, the contact portion of the tool 10 with the wafer locking portion 3 is close to the contact portion 3, or the wafer 1
Infrared rays and/or visible light and ultraviolet rays can be focused near the contact area with the frame 5.

Next, a specific example of a semiconductor processing apparatus using the susceptor of the present invention will be described.

FIG. 6 is a schematic sectional view showing an embodiment of a semiconductor processing apparatus using a susceptor according to the present invention, and FIG. 7 is a schematic sectional view taken along line E--E in FIG. 6.

6 omits the guide rail 20, and FIG. 7 omits the power set 1-11 for automatically feeding the wafer.

In FIGS. 6 and 7, the furnace body 13 is connected to the susceptor 1.
Similarly, it is made of a material that transmits infrared rays, visible light, and ultraviolet rays. The furnace body 13 is
As is clear from FIG. 7, it is manufactured so that its cross section is elongated, that is, its vertical length is as short as possible.

A gas supply/discharge port 16 for controlling the atmosphere within the furnace body 13 is provided above the furnace body 13 . Furthermore, a pair of guide rails 20 for transporting the susceptor 1 are provided on the bottom surface of the furnace body 13 and are made of a material that transmits infrared rays and/or visible light and ultraviolet rays.
is being pulled.

Although the susceptor 1 on which the wafer 10 is placed has the frame bottom 4 described in the first embodiment, it is not limited to this shape.

The susceptor 1 has a pair of susceptor locking portions 7 formed on both sides thereof, and the guide rail 20
It is latched at the top and is conveyed in the direction of the arrow by a known driving means (not shown).

The wafer 10 is placed on the susceptor 1 by a wafer automatic supply cassette 11 arranged upstream of the susceptor 1 in the transport direction, and by a wafer automatic storage cassette 11 arranged downstream of the susceptor 1 in the transport direction. It is recovered from the susceptor 1 by the cassette 17.

Therefore, unprocessed wafers 10A are placed in the cassette 11 for automatic wafer supply, and processed wafers IOB are placed in the cassette 17 for automatic wafer storage.

On the upper and lower surfaces of the furnace body 13, there are provided a light source 15 for irradiating the wafer 10 placed on the susceptor 1 with infrared rays, visible rays, and ultraviolet rays, and a light source 15 for irradiating the wafer 10 placed on the susceptor 1 with infrared rays, visible rays, and ultraviolet rays. A reflecting mirror 14 is arranged to properly illuminate the wafer 10.

Now, if you are in a semiconductor processing apparatus having the above configuration,
The light #i15 is turned on, the susceptor 1 is transported in the direction of the arrow by means not shown, and the wafer 10 is transferred to the wafer 1 by the cassette 11 for automatic wafer supply and the cassette 17 for automatic wafer storage. By placing the wafer on the susceptor 1 or collecting it from the susceptor 1, the wafer 10 can be heated well (in the range of room temperature or higher and 1400 (°C) or lower).
will be applied, and continuous processing will be performed.

Moreover, at this time, a reaction gas is supplied from the gas supply/discharge port 16 or unnecessary waste gas is discharged as necessary.

As mentioned above, the cross-section of the furnace body 13 cut along the plane perpendicular to the conveyance direction of the susceptor 1 is manufactured so that the length in the vertical direction is as short as possible. body 1
Since the convection of the atmosphere in the furnace 3 is reduced, the heat dissipation of the wafer 10 to the atmosphere in the furnace is delayed, and the temperature of the atmosphere can be raised quickly, so the wafer 10 can be heated more efficiently and uniformly. You can do it again quickly.

If the vertical length of the furnace 13 cannot be shortened, infrared rays and/or
Alternatively, a shielding plate made of a material that transmits visible light and ultraviolet rays may be provided.

FIG. 8 is a schematic cross-sectional view showing a modification of a semiconductor processing apparatus using the susceptor of the present invention.

In the figure, the same reference numerals as in FIG. 6 represent the same or equivalent parts.

In FIG. 8, a light source 21 such as a quasi-arc xenon lamp, a condensing mirror 22, a filter 23, and an integrating optical system 24 are arranged in place of the reflecting mirror 14 and light source 15 in FIG. 6.

When the light source 21 is turned on, the infrared rays and/or visible rays and ultraviolet rays generated by the light source 21 travel in the directions of arrows F and G, and are irradiated onto the furnace 10 in the furnace body 13.

The filter 23 filters out light rays in a wavelength range -1- that is harmful to the target processing process of the wafer 10, that is, the wavelength is 4.
It absorbs or reflects and removes at least a portion of ultraviolet rays below 00 (tv).

Therefore, by arranging this, the wafer 10
can be heated effectively without being irradiated with ultraviolet rays, which are harmful to processing, and rays in the wavelength region.

Next, FIG. 9 shows an example of a susceptor 1 suitable for placing or taking out a wafer.

FIG. 9 is a schematic perspective view of the susceptor J3 in FIG. 2 divided into two parts.

In the figure J3, the same reference numerals as in FIG. 2 refer to the same or equivalent parts.

In FIG. 9, the frame 5 of the susceptor 1 is divided into two parts, frame pieces 5A and 5B, so as to divide the wafer storage section 2 into approximately two equal parts.

A drive shaft 1C is provided on the non-opposed surfaces of the frame pieces 5A and 5B.
are fixed to each other, and the open end of the drive shaft 1C can be fixed to a susceptor opening device (not shown).

The susceptor opening device (not shown) is normally configured to bring the frame pieces 5A and 5B into close contact with each other so that the wafer 10 can be placed on the wafer locking portion 3, but for example, the susceptor opening device is a susceptor opening device that is not shown in the drawings. The susceptor 1 is arranged or transported below the wafer automatic storage force sets 1 to 17, and when the susceptor 10 is placed in the susceptor 1 or not taken out from the susceptor 1, the frame is The structure is such that the body pieces 5A and 5B can be separated from each other and the wafer 10 can be easily placed or taken out.

Although the division of the susceptor 1 into two is shown in FIG. It goes without saying that the present invention can also be applied to the third to fifth embodiments.

Next, FIG. 10 shows an example of a susceptor 1 on which a plurality of wafers can be placed.

FIG. 10 is a schematic perspective view when two susceptors 1 in FIG. 2 are connected.

In the figure, the same reference numerals as in FIG. 2 represent the same or equivalent parts.

In FIG. 10, two wafer storage sections 2 are formed in one frame 5. In FIG.

That is, in the semiconductor processing apparatus shown in FIG. 6 or 8, if the susceptor 1 shown in FIG.
It is clear that twice the number of wafers can be processed when the susceptor 1 is transported.

In FIG. 10-3, two wafer storage parts 2 are formed in one frame 5, but the invention is not limited to this, and one frame 5 can have three or more wafer storage parts 2. It goes without saying that the storage section 2 may also be formed.

Furthermore, as shown in FIG. 10 (the dual pull susceptor 1 is applied to the second embodiment of the present invention, it is not particularly limited to this 1), but is similar to the first embodiment of the present invention. It goes without saying that the present invention can also be applied to this embodiment and the third to fifth embodiments.

Now, as is clear from the above explanation, the first aspect of the present invention
The susceptor for wafer processing according to the fifth embodiment is as follows:
Since irradiation with infrared rays, visible light, and ultraviolet rays can be directly supplied to both sides of the wafer, the temperature rises quickly, the heating efficiency is good, and furthermore, uniform heating can be performed.

Therefore, if the susceptor is shaped so that the bottom of the frame is not bent, or if its material is made of a material that transmits infrared rays, visible light, and ultraviolet rays, the susceptor can be used to prevent photochemical reaction of the wafer. It can also be applied to processing such as

(Effects) As is clear from the above explanation, according to the present invention, the following effects are achieved.

(1) The susceptor is exposed to infrared and/or visible light,
Since the wafer is formed of a material that can transmit ultraviolet rays, both sides of the wafer can be directly heated η by irradiation with infrared rays and/or visible light and ultraviolet rays.

(2) Furthermore, since the wafers 1-8 are held at their outer peripheries, there is less heat loss and the temperature of the wafer increases quickly. Furthermore, both main surfaces of the wafer can be heated uniformly, and the heating efficiency can be improved.

(3) When the susceptor has a shape that does not have a frame bottom, the reaction gas can be brought into contact with both sides of the wafer, so the processing time can be shortened in processes such as ashing. can.

(4) When the Sareptor is provided with a frame bottom and an annular groove locking part, the wafer locking part is J, so that the wafer storage part is in a sealed state, so the bottom surface of the wafer is kept warm. This makes it possible to perform heating even more efficiently.

(5) When the lower surface of the susceptor is shaped like a concave lens, infrared rays, visible light, and ultraviolet rays can be focused onto the contact area of the wafer with the susceptor. It is possible to prevent a temperature drop or uneven heating of the wafer.

[Brief explanation of drawings]

FIG. 1 is a schematic vertical cross-sectional view of a first embodiment of the present invention, FIG. 2 is a schematic vertical cross-sectional view of a second embodiment of the present invention, and FIG. 3 is a schematic longitudinal cross-sectional view of a third embodiment of the present invention. 4 is a schematic longitudinal sectional view of the fourth embodiment of the present invention, FIG. 5 is a schematic longitudinal sectional view of the fifth embodiment of the present invention, and FIG. 6 is a schematic longitudinal sectional view of the susceptor of the present invention. FIG. 7 is a schematic cross-sectional view of a semiconductor processing apparatus using the susceptor of the present invention, and FIG. A schematic sectional view showing a modification of the processing device, FIG. 9 is a schematic perspective view of the susceptor shown in FIG. 2 divided into two parts, and FIG.
It is a schematic perspective view when two susceptors in the figure are connected. 1... Susceptor, 2... Wafer storage section, 3...
4. Frame bottom, 5. Frame, 1
0...Wafer agent Michito Hiraki and 1 other person Figure 1 Figure 6 Figure 7 Figure 8 Figure 9 Figure 1 5B

Claims (1)

[Claims] (1) A wafer processing substrate holder for holding a wafer in order to irradiate the wafer with light, the holder having an opening larger than the child of the wafer on two sides thereof. A wafer processing device comprising: a frame forming a wafer storage section; and means formed on the frame so as to lock an outer peripheral portion of a wafer stored in the wafer storage section. board holder. (2) The wafer processing according to the scope of the patent, item 1, wherein the frame has a frame bottom that is disposed on the lower surface of the wafer storage section, and is formed of a material that transmits light. board holder. １'lJl
The substrate holder for wafer processing according to claim 1, characterized in that it is formed so that when the IC comes out and the τ is opened. (4) The means formed on the frame protrudes upward from the frame inside the wafer storage section, and the upper end thereof extends on a circumference having a diameter slightly smaller than the diameter of the wafer. The wafer processing substrate holder according to any one of claims 1 to 3, characterized in that there are at least three protrusions arranged. (5) The means formed on the frame protrudes upward from the frame inside the wafer storage section, and the upper end thereof is formed in an annular shape having a diameter slightly smaller than the diameter of the wafer. A wafer processing substrate holder according to any one of claims 1 to 3, characterized in that: (6) The substrate holder for wafer processing according to any of the patents, wherein the opening of the frame is reduced in size from the upper surface to the lower surface of the frame. (7) The substrate holder for wafer processing according to claim 2, wherein the light-transmitting material is fused silica. (8) The substrate holder for wafer processing according to claim 3, wherein the material forming the substrate holder is silicon. (9) The substrate holder for wafer processing according to claim 3, wherein the material forming the substrate holder is a composite material of silicon and carbon. (10) A wafer processing substrate holder for holding a wafer in order to irradiate the wafer with light, the frame forming a wafer storage portion having an opening larger than the diameter of the wafer on its upper surface. means formed on the frame body so as to lock the outer circumferential portion of the wafer stored in the wafer storage unit; and means formed on the frame body of the wafer stored in the wafer storage unit A concave lens-shaped portion is formed by processing the frame body so as to condense light irradiated from below near the contact portion with the means, and the frame body transmits light. A substrate holder for wafer processing, characterized in that it is formed of a silica material.