TWI619198B - Wafer carrier - Google Patents

Wafer carrier Download PDF

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Publication number
TWI619198B
TWI619198B TW105107719A TW105107719A TWI619198B TW I619198 B TWI619198 B TW I619198B TW 105107719 A TW105107719 A TW 105107719A TW 105107719 A TW105107719 A TW 105107719A TW I619198 B TWI619198 B TW I619198B
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Taiwan
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wafer
carrier device
wafer carrier
angle
inclined portion
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TW105107719A
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English (en)
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TW201732996A (zh
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Yen-Lun Huang
Chien-Jen Sun
Ying-Ru Shih
Wen-Ching Hsu
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Priority to TW105107719A priority Critical patent/TWI619198B/zh
Priority to US15/456,562 priority patent/US10490432B2/en
Priority to CN201710147409.XA priority patent/CN107195579B/zh
Publication of TW201732996A publication Critical patent/TW201732996A/zh
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Publication of TWI619198B publication Critical patent/TWI619198B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一種晶圓承載裝置，供多個晶圓置放，該晶圓承載裝置包含一盤體，表面凹陷形成多個容置槽，每一容置槽供一晶圓置放且由一側槽壁及一底槽壁配合界定而成，該側槽壁包括一供該晶圓靠抵的凸部，及一連接該凸部上方且不接觸該晶圓的凹部，該凸部與該凹部之交界位於該晶圓遠離該底槽壁之一面的下方，本發明藉由凸部以及凹部使得容置槽內的晶圓在該盤體旋轉時受壓均勻分佈，避免因受離心力擠壓而導致邊緣或表面產生缺陷、損傷，使得晶圓品質下降。

Description

晶圓承載裝置
本發明是有關於一種承載裝置，特別是指一種應用於半導體磊晶製程中的晶圓承載裝置。
化學氣相沉積(Chemical Vapor Deposition，CVD)為半導體元件製程中重要的製程技術之一。其方法主要是將晶圓暴露在一種或多種不同的前驅物(precursor)下，使晶圓表面發生氧化還原等化學反應，藉此沉積薄膜於晶圓表面上。在進行化學氣相沉積的過程中，薄膜之膜厚均勻度是決定薄膜品質好壞的重要指標之一。為此，在化學氣相沉積的過程中，常用加熱晶圓載體、變化反應腔室之形狀、修改簇射頭特性，以及旋轉晶圓載體等方式提高薄膜之膜厚均勻度。
上述所提及的方法中，旋轉晶圓載體雖能有效提高膜厚均勻度，卻也衍生了另一個影響製程良率的問題。當晶圓在載體上旋轉時會受到離心力之影響進而壓迫載體，造成晶圓邊緣或表面產生缺陷、損傷，導致晶圓品質下降，不利於後續的半導體元件製作。
因此，本發明之目的，即在提供一種在半導體磊晶製程中，避免放置在旋轉的載體上之晶圓因壓迫載體，而導致邊緣或表面產生缺陷、損傷，導致晶圓品質下降的晶圓承載裝置。
於是，本發明晶圓承載裝置，供多個晶圓置放，該晶圓承載裝置包含一盤體，表面凹陷形成多個容置槽，每一容置槽供一晶圓置放且由一側槽壁及一底槽壁配合界定而成，該側槽壁包括一供該晶圓靠抵的凸部，及一連接該凸部上方且不接觸該晶圓的凹部，該凸部與該凹部之交界位於該晶圓頂表面的下方。
在一些實施態樣中，每一凸部的高度小於該晶圓的厚度。
在一些實施態樣中，該凸部與該凹部的高度比例為1:1。
在一些實施態樣中，該凸部以及該凹部配合界定一階梯狀的輪廓。
在一些實施態樣中，每一側槽壁還包括一連接於該凹部上方並朝向對應容置槽之中心傾斜的傾斜部。
在一些實施態樣中，該晶圓周緣具有一倒角，每一傾斜部之傾斜方向與該晶圓的倒角邊平行，定義一通過該凹部及該傾斜部交界之水平線，該傾斜部與該水平線之夾角等於該晶圓倒角之角度。
在一些實施態樣中，該晶圓周緣具有一倒角，定義一通過該凹部及該傾斜部交界之水平線，該傾斜部與該水平線之夾角不小於該晶圓倒角之角度且小於九十度。
在一些實施態樣中，該傾斜部與該水平線之夾角不大於該晶圓倒角之角度加上三十度。
在一些實施態樣中，該傾斜部與該晶圓的倒角邊之間距不小於10微米。
在一些實施態樣中，該凸部凸出於該凹部之水平距離大於10微米。
在一些實施態樣中，該盤體呈圓形。
在一些實施態樣中，該盤體是由一鍍有碳化矽的石墨所構成。
本發明之功效在於：在半導體磊晶製程中，該盤體旋轉時，能藉由上述凸部以及凹部使得該等容置槽內的晶圓受壓均勻分佈，避免因受離心力擠壓而導致邊緣或表面產生缺陷、損傷，使得晶圓品質下降，並且藉由上述傾斜部防止晶圓脫離容置槽。
參閱圖1、2，本發明晶圓1承載裝置之一實施例可供五個晶圓1置放，但不以此數量為限，每一晶圓1的周緣具有四倒角。本實施例包含一表面凹陷形成五個環狀排列之容置槽2的盤體3，但該容置槽2之排列形狀並非僅受限於環形，可依照實際使用上的需求調整為其他形狀。該盤體3呈圓形並且是由一鍍有碳化矽塗層的石墨所構成。該等容置槽2的開口也同樣地呈圓形，每一容置槽2可供一晶圓1置放並且由一側槽壁31以及一底槽壁32互相配合界定而成。
在本實施例中，該等底槽壁32的頂面是平整的，將一晶圓1置放於一容置槽2時，該晶圓1的底表面11是與該底槽壁32之平整表面相互接觸(見圖2)。但是在其他實施態樣中，亦可依實際需求將底槽壁32之表面調整為一凸面或著是一凹面，以調控晶圓1在化學氣相沉積製程中之受熱均勻度。該等側槽壁31是分別自對應的底槽壁32向上延伸形成，每一側槽壁31包括一自對應的底槽壁32向上延伸形成的凸部312，以及一連接該凸部312上方的凹部311。該凸部312與該凹部311配合界定出一階梯狀的輪廓，並且其交界處是位於該晶圓1的頂表面13之下方。該盤體3旋轉時，該凸部312可供該晶圓1之側表面12靠抵以使該晶圓1受壓均勻，並且該凹部311不與該晶圓1接觸，避免因過度擠壓而導致該晶圓1之邊緣或頂表面13產生缺陷、損傷，導致品質下降，不利於後續的半導體元件製作。
在本實施例中，該等側槽壁31之凸部312的較佳高度是控制在小於該晶圓1之厚度，該高度之定義是自側槽壁31垂直向上延伸至對應之凹部311與凸部312交界處的距離。若凸部312之高度大於晶圓1之厚度，會因晶圓1與凸部312接觸面積過大而導致晶圓1在旋轉時受凸部312壓迫而導致晶圓1之邊緣或是表面產生缺陷。此外，該凸部312與該凹部311之高度比例，較佳是一比一。相較於該凹部311之高度，該盤體3在旋轉時，若該凸部312之高度較小則該晶圓1受壓較不均勻；若該凸部312之高度較大，則會過度擠壓該晶圓1，導致該晶圓1之邊緣或頂表面13產生缺陷、損傷。此外，該凸部312凸出於該凹部311之水平距離較佳為大於10微米，以避免該盤體3在旋轉時，該晶圓1碰觸到該凹部311而導致損傷。
為了防止置放於容置槽2之晶圓1在該盤體3旋轉時因轉速過快，而脫離容置槽2。在本實施例中，每一側槽壁31還包括一連接於該凹部311上方並朝向對應的容置槽2之中心傾斜且傾斜方向與該晶圓1的倒角邊14平行的傾斜部313。定義一通過該凹部311及該傾斜部313交界之水平線L，因該傾斜部313的傾斜方向與該晶圓1的倒角邊14平行，故該傾斜部313與該水平線L之夾角等於該晶圓1倒角之角度。該傾斜部313遮蔽部分之該晶圓1並且能夠在該盤體3旋轉時，阻擋該晶圓1脫離該容置槽2。然而，為了達到較佳的限位效果，在其他實施例中該傾斜部313的傾斜方向與該晶圓1的倒角邊14也可以是不平行的，該傾斜部313具有特定的較佳實施方式，說明如下。首先，定義一通過該凹部311及該傾斜部313交界之水平線L，並定義該傾斜部313與該水平線L之夾角φ，該夾角φ的較佳實施範圍為不小於該晶圓1之倒角角度θ且小於九十度；該夾角φ的更佳實施範圍為不小於該晶圓1之倒角角度θ且不大於該晶圓1之倒角角度θ加上三十度，但是該夾角φ須小於九十度。藉此，可達到更佳之限位效果，更能防止該晶圓1在該盤體3旋轉時脫離該容置槽2。此外，該傾斜部313與該晶圓1的倒角邊14較佳間距是控制在不小於10微米，以防止該晶圓1在該盤體3旋轉時與該傾斜部313相互接觸靠抵，而導致缺陷產生於該晶圓1之倒角邊14。
綜上所述，本發明晶圓1承載裝置，藉由凸部312以及凹部311使得容置槽2內的晶圓1在該盤體3旋轉時受壓均勻分佈，避免因受離心力擠壓而導致邊緣或表面產生缺陷、損傷，使得晶圓1能維持良好的結構品質，並且藉由上述傾斜部313能防止晶圓1脫離容置槽2，故確實能達成本發明之目的。
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。
1‧‧‧晶圓
11‧‧‧底表面
12‧‧‧側表面
13‧‧‧頂表面
14‧‧‧倒角邊
2‧‧‧容置槽
3‧‧‧盤體
31‧‧‧側槽壁
311‧‧‧凹部
312‧‧‧凸部
313‧‧‧傾斜部
32‧‧‧底槽壁
L‧‧‧水平線
θ‧‧‧倒角角度
φ‧‧‧夾角
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是本發明晶圓承載裝置的一實施例之一俯視圖；及 圖2是一局部剖視示意圖，說明一晶圓置放於該實施例之一容置槽內的實施態樣。

Claims (12)

  1. 一種晶圓承載裝置，供多個晶圓置放，該晶圓承載裝置包含： 一盤體，表面凹陷形成多個容置槽，每一容置槽供一晶圓置放且由一側槽壁及一底槽壁配合界定而成，該側槽壁包括一供該晶圓靠抵的凸部，及一連接該凸部上方且不接觸該晶圓的凹部，該凸部與該凹部之交界位於該晶圓頂表面的下方。
  2. 如請求項1所述的晶圓承載裝置，其中，每一凸部的高度小於該晶圓的厚度。
  3. 如請求項2所述的晶圓承載裝置，其中，該凸部與該凹部的高度比例為1:1。
  4. 如請求項3所述的晶圓承載裝置，其中，該凸部以及該凹部配合界定一階梯狀的輪廓。
  5. 如請求項1所述的晶圓承載裝置，其中，每一側槽壁還包括一連接於該凹部上方並朝向對應容置槽之中心傾斜的傾斜部。
  6. 如請求項5所述的晶圓承載裝置，其中，該晶圓周緣具有一倒角，每一傾斜部之傾斜方向與該晶圓的倒角邊平行，定義一通過該凹部及該傾斜部交界之水平線，該傾斜部與該水平線之夾角等於該晶圓倒角之角度。
  7. 如請求項5所述的晶圓承載裝置，其中，該晶圓周緣具有一倒角，定義一通過該凹部及該傾斜部交界之水平線，該傾斜部與該水平線之夾角不小於該晶圓倒角之角度且小於九十度。
  8. 如請求項7所述的晶圓承載裝置，其中，該傾斜部與該水平線之夾角不大於該晶圓倒角之角度加上三十度。
  9. 如請求項8所述的晶圓承載裝置，其中，該傾斜部與該晶圓的倒角邊之間距不小於10微米。
  10. 如請求項9所述的晶圓承載裝置，其中，該凸部凸出於該凹部之水平距離大於10微米。
  11. 如請求項10所述的晶圓承載裝置，其中，該盤體呈圓形。
  12. 如請求項11所述的晶圓承載裝置，其中，該盤體是由一鍍有碳化矽的石墨所構成。
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TWI677935B (zh) * 2019-03-13 2019-11-21 環球晶圓股份有限公司 晶圓轉換裝置
CN112002671B (zh) * 2020-08-24 2024-06-11 武汉驿天诺科技有限公司 一种适用于不同尺寸的晶圆托盘装置
CN112871860A (zh) * 2020-08-28 2021-06-01 山东华光光电子股份有限公司 一种半导体激光器金属部件的清洗装置与清洗方法
CN112786522A (zh) * 2020-12-31 2021-05-11 拓荆科技股份有限公司 可调整晶圆边缘膜厚度的托盘装置
CN214300348U (zh) * 2021-01-26 2021-09-28 苏州晶湛半导体有限公司 石墨盘

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