CN214300348U - 石墨盘 - Google Patents

石墨盘 Download PDF

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CN214300348U
CN214300348U CN202120219432.7U CN202120219432U CN214300348U CN 214300348 U CN214300348 U CN 214300348U CN 202120219432 U CN202120219432 U CN 202120219432U CN 214300348 U CN214300348 U CN 214300348U
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向鹏
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Enkris Semiconductor Inc
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    • H—ELECTRICITY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • C—CHEMISTRY; METALLURGY
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

本实用新型提供了一种石墨盘，解决了现有技术中利用石墨盘进行材料外延生长时所得到的外延片的性能均一性差的问题。石墨盘包括：石墨盘本体，包括承载槽和位于承载槽远离石墨盘本体的中心点一侧的凹槽；和止挡件，与凹槽匹配嵌合，止挡件凸出于承载槽的底部表面，以形成限位结构。

Description

石墨盘
技术领域
本实用新型涉及半导体材料生长设备技术领域，具体涉及一种石墨盘。
背景技术
发光二极管(Light Emitting Diode，LED)是一种固态半导体二极管发光器件，被广泛用于指示灯、显示屏等照明领域。现阶段制取LED晶圆片的方法主要是通过金属有机化合物气相沉积(Metal-organic Chemical Vapor Deposition，MOCVD)实现，可以简述其流程如下：将衬底放入石墨盘的凹槽上，将载有衬底的石墨盘放入MOCVD反应室内，通过将反应室温度加热到预设温度，并配合通入有机金属化合物和五族气体，使它们在衬底上断开化学键并重新聚合形成LED外延层。
然而，根据上述过程得到的外延片的性能均一性较差，例如LED波长不均匀、二维电子气不均匀等。
实用新型内容
有鉴于此，本实用新型实施例致力于提供一种石墨盘，以解决现有技术中利用石墨盘进行材料外延生长时所得到的外延片的性能均一性差的问题。
本实用新型实施例提供了一种石墨盘，用于半导体材料的外延生长。石墨盘包括：石墨盘本体，包括承载槽和位于承载槽远离石墨盘本体的中心点一侧的凹槽；和止挡件，与凹槽匹配嵌合，止挡件凸出于承载槽的底部表面，以形成限位结构。根据本实施例提供的石墨盘，通过设置止挡件，以将衬底的侧壁和承载槽的侧壁间隔开，避免衬底的侧壁与承载槽的侧壁直接接触导致接触点温度过高，使得外延片受热更均匀，从而提升了外延片的性能均一性。
在一个实施例中，凹槽和止挡件之间还设置有隔热层。这样，可以降低石墨盘本体和止挡件之间的热传递，从而避免止挡件温度过高，以进一步平衡衬底的受热温度。
在一个实施例中，隔热层包覆止挡件。在止挡件外表面形成一层隔热层，一方面，易于工业制备；另一方面，确保全方位隔热。
在一个实施例中，止挡件上设置有导热孔。利用导热孔提高止挡件的散热，从而进一步避免止挡件温度过高，平衡衬底的受热温度。
在一个实施例中，止挡件包括与承载槽的底部表面垂直的止挡面，止挡面为曲面。由于衬底通常为圆盘状，通过设置止挡面为曲面，可以形成与衬底侧面形成匹配的表面，避免衬底和止挡件接触的表面产生应力集中点，从而提高了止挡件的可靠性。
在一个实施例中，承载槽和石墨盘本体均为圆形，止挡件关于石墨盘本体和承载槽的中心点连线的延长线对称。这样，可以确保衬底受到的离心力反作用在止挡件的中心点，使得止挡件受力更均匀，进一步提高了止挡件的可靠性。
在一个实施例中，止挡件包括与承载槽的底部表面垂直的止挡部，止挡部与承载槽的侧壁之间具有预定间隔。这样，可以降低石墨盘本体和止挡件之间的热传导，从而避免止挡件温度过高，进而提高衬底受热均一性。
在一个实施例中，止挡件为L型止挡件，L型表面的开口背向石墨盘本体的中心点。L型止挡件结构简单，易于工业实现。
在一个实施例中，止挡件凸出于承载槽的底部表面的部分向石墨盘中心点倾斜设置。
在一个实施例中，L型止挡件的拐角处的外侧边缘线为弧形。这样，相当于在止挡件的拐角处设置倒角，可以便于止挡件和凹槽之间的装卸。
在一个实施例中，止挡件的材料包括碳化硅和石英中的任一种。这样，一方面，可以确保足够的硬度；另一方面，由于碳化硅和石英的热传导系数较低，从而可以尽量避免止挡件12温度过高，从而进一步提高衬底受热均一性。
根据本实用新型提供的石墨盘，通过设置止挡件，以将衬底的侧壁和承载槽的侧壁间隔开，避免衬底的侧壁与承载槽的侧壁直接接触导致接触点温度过高，使得外延片受热更均匀，从而提升了外延片的性能均一性。
附图说明
图1为本实用新型一实施例提供的石墨盘的结构示意图。
图2为本实用新型第一实施例提供的图1所示石墨盘沿A1A2线的局部截面示意图。
图3为本实用新型第二实施例提供的图1所示石墨盘沿A1A2线的局部截面示意图。
图4为本实用新型第三实施例提供的图1所示石墨盘沿A1A2线的局部截面示意图。
图5为本实用新型另一实施例提供的石墨盘的结构示意图。
图6为本实用新型又一实施例提供的石墨盘的结构示意图。
具体实施方式
如背景技术所述，现有技术中利用石墨盘进行外延生长时所得到的外延片的性能均一性较差。发明人研究发现，造成外延片性能均一性差的原因至少包括：在外延生长过程中，衬底随石墨盘一起旋转，由于离心力的作用，衬底远离石墨盘中心点的边缘与石墨盘上的承载槽的侧壁直接接触，导致该接触位置相比于衬底侧壁上的其他位置的温度更高，造成衬底受热不均匀，进而导致衬底发生塑性形变。正是由于衬底中的塑性形变，使得外延生长得到的外延片的性能不均匀。
有鉴于此，本申请实施例提供了一种石墨盘，包括石墨盘本体和止挡件。石墨盘本体包括承载槽和位于承载槽远离石墨盘本体的中心点一侧的凹槽。止挡件与凹槽匹配嵌合，止挡件凸出于承载槽的底部表面，以形成限位结构。根据本申请实施例提供的石墨盘，通过在衬底侧壁和承载槽侧壁相接触的位置设置止挡件，以将衬底的侧壁和承载槽的侧壁间隔开，避免衬底的侧壁与承载槽的侧壁直接接触导致接触点温度高于非接触位置，从而确保外延片受热更均匀，以提升外延片的性能均一性。
下面将结合本实用新型实施例中的附图，对本实用新型实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本实用新型一部分实施例，而不是全部的实施例。基于本实用新型中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本实用新型保护的范围。
图1为本实用新型一实施例提供的石墨盘的结构示意图。图2为本实用新型第一实施例提供的图1所示石墨盘沿A1A2线的局部截面示意图。结合图1和图2所示，石墨盘10包括石墨盘本体11，石墨盘本体11包括承载槽110，承载槽110的底部表面上设置有凹槽111，凹槽111位于承载槽110的底部表面的边缘区域。石墨盘10还包括止挡件12，止挡件12与凹槽111匹配嵌合，止挡件12凸出于承载槽110的底部表面，以形成限位结构。
石墨盘本体11上设置有多个承载槽110，每个承载槽110用于承载一个衬底，一个衬底经过半导体材料的外延生长后，得到一个外延片。承载槽110的形状取决于待生长的衬底的形状。在一个实施例中，承载槽110为圆形凹槽。承载槽110的远离石墨盘11中心点O1的边缘区域设置有止挡件12。具体而言，承载槽110的底部表面设置有凹槽111，止挡件12的一端嵌入凹槽111内，以实现止挡件12的固定；止挡件12的另一端凸出于承载槽110的底部表面，用于与衬底的侧壁接触，以将后续放置在承载槽110内的衬底的部分侧壁与承载槽110的侧壁间隔开，从而避免衬底的侧壁与承载槽110的侧壁直接接触导致接触点温度高于衬底侧壁的其他位置，从而使得衬底受热更均匀，进而得到性能均一性更好的外延片。
止挡件12的形状和凹槽111的形状相互制约，以能够实现嵌合关系为准。在一个实施例中，凹槽111和止挡件12可拆卸连接。即凹槽111和止挡件12之间的嵌合关系是可逆的，也即凹槽111和止挡件12可以嵌合连接，也可以解除嵌合，以彼此分离。将凹槽111和止挡件12实施为可拆卸的连接关系，方便更换止挡件12，提高了石墨盘本体11的利用率。
在一个实施例中，如图2所示，止挡件12包括与承载槽110的底部表面垂直的止挡部122，止挡部122与承载槽110的侧壁之间具有预定间隔D。具体而言，止挡件12包括一体成型的固定部121和止挡部122，固定部121嵌入凹槽111内，用于将止挡件12与石墨盘本体11连接；止挡部122凸出于承载槽110的底部表面，用于与衬底的侧壁接触，以将衬底的部分侧壁和承载槽110的侧壁间隔开，固定部121和止挡部122的分界线例如图2中虚线所示。通过设置止挡部122与承载槽110的侧壁间隔，可以减弱石墨盘本体11和止挡件12之间的热传导，以增大石墨盘本体11和止挡件12之间的温度差，使得即使止挡件12和衬底侧壁直接接触，也不会造成接触点的温度相比于衬底侧壁的其他位置的温度过高，从而进一步提高衬底受热均匀性。
具体而言，在一个实施例中，止挡件12为L型止挡件，L型止挡件的开口背向石墨盘本体11的中心点O1。这种情况下，为了实现凹槽111与止挡件12的匹配嵌合，在一个实施例中，凹槽111于石墨盘本体11的厚度方向上的截面为矩形，凹槽111包括开口，开口宽度小于矩形凹槽111的底面宽度。这种情况下，当L型止挡件的固定部121嵌入凹槽111内时，凹槽111的上壁可以形成止挡结构，以将止挡件12限制在凹槽111内，从而实现止挡件12和凹槽111之间的嵌合关系。
在一个实施例中，如图2所示，止挡件12包括与承载槽110的底部表面垂直的止挡面S，止挡面S为曲面。止挡面S与承载槽110的底部表面垂直是指止挡面S的法平面与承载槽110的底部表面垂直。该止挡面S后续与衬底的侧壁接触，以对衬底进行限位。
具体而言，止挡部122包括止挡面S。例如，止挡部122为弧形板状。这样，止挡面S可以与衬底侧壁的形状相适应，避免衬底和止挡面S接触时，产生应力集中点。例如，止挡部122靠近承载槽110的中心点O1侧的表面为弧形。凹槽111实施为条形凹槽，条形凹槽呈弧形，条形凹槽、止挡部122和承载槽110同心设置。这样，可以确保衬底与止挡面S接触的部分侧壁和承载槽110的侧壁之间的距离处处相等，进一步确保衬底均匀受热。又例如，止挡部122被划分为上下两个区域，即位于凹槽111内的第二区域Q2和凸出于承载槽110的底部表面的第一区域Q1，第一区域Q1和第二区域Q2的分界面与承载槽110的底部表面共平面，分界面例如为图2中的点线所示。其中，位于上方的第一区域Q1包括朝向承载槽110的中心点的第一表面，第一表面为弧形表面，以形成止挡面，用于与衬底侧壁接触；位于下方的第二区域Q2包括朝向承载槽110的中心点的第二表面，第二表面为平面，用于与凹槽111的侧壁接触。第一表面和第二表面可通过第三表面连接，第三表面与承载槽110的底壁共平面，第三表面例如为月牙形。这种情况下，凹槽111可实施为条形凹槽，条形凹槽呈直线形。直线形的条形凹槽便于制备，利于工业实施。
在一个实施例中，凹槽111和止挡件12之间还设置有隔热层(图中未示出)。隔热层可以是设置在凹槽111内的填充物，例如泡棉；隔热层还可以是涂层，涂层可以形成于凹槽111的至少部分内壁上，也可以形成于止挡件12的至少部分外壁上。通过设置隔热层，可以减弱石墨盘本体11和止挡件12之间的热传导，以增大石墨盘本体11和止挡件12之间的温度差，使得即使止挡件12和衬底直接接触，也不会造成接触点的温度相比于衬底侧壁的其他位置的温度过高，从而进一步提高衬底受热均匀性。在一个实施例中，隔热层包覆止挡件12。在止挡件12外表面形成一层隔热层，一方面，易于工业制备；另一方面，确保全方位隔热，从而提升隔热效果。
在一个实施例中，如图1所示，承载槽110和石墨盘本体11均为圆形，止挡件12关于石墨盘本体11的中心点O1和承载槽110的中心点O2连线的延长线对称。这样，可以确保衬底受到的离心力反作用在止挡件12的中心点，使得止挡件12受力更均匀，提高了止挡件12的可靠性。
在一个实施例中，止挡件12的材料包括碳化硅和石英中的任一种。这样，一方面，可以确保足够的硬度；另一方面，由于碳化硅和石英的热传导系数较低，从而进一步减弱石墨盘本体11和止挡件12之间的热传导，以进一步提高衬底受热均匀性。
图3为本实用新型第二实施例提供的图1所示石墨盘沿A1A2线的局部截面示意图。如图3所示，石墨盘20和图1、图2所示石墨盘10的区别仅在于，L型止挡件22的拐角处Q的外侧边缘线为弧形，即在L型止挡件22的拐角处设置有倒角，以便于L型止挡件22和凹槽111之间的拆卸。
图4为本实用新型第三实施例提供的图1所示石墨盘沿A1A2线的局部截面示意图。如图4所示，石墨盘30和图1、图2所示石墨盘10，以及图3所示石墨盘20的区别仅在于，止挡件32上设置有导热孔320。导热孔320的形状、排布方式均可以根据实际需要合理设置。在一个实施例中，止挡件32上设置有多个平行排布的导热孔320，每个导热孔320在厚度方向上贯穿止挡件32。止挡件32的厚度方向是指由石墨盘本体11的中心点O1指向承载槽110的中心点O2的方向。
根据本实施例提供的石墨盘30，利用导热孔320提高止挡件32的散热，从而进一步避免止挡件32温度过高，进而平衡衬底受热。
图5为本实用新型另一实施例提供的石墨盘的结构示意图。如图5所示，石墨盘40和图1所示石墨盘10的区别仅在于凹槽的位置不同。具体而言，在石墨盘40中，凹槽411设置在承载槽410远离石墨盘本体41的中心点O1的侧壁上，凹槽411的开口朝向石墨盘本体41的中心点O1。这样，制备工艺更简单，而且凹槽411上壁厚度更大，结构更可靠。
凹槽411可以设置在承载槽410的侧壁的任意位置，例如，如图5所示，凹槽411设置在承载槽410的侧壁的底部，凹槽411的部分侧壁与承载槽410的底壁平齐。
在本实施例中，止挡件42可以采用上述任一实施例提供的结构形式，例如L型止挡件。
图6为本实用新型又一实施例提供的石墨盘的结构示意图。如图6所示，在石墨盘50中，止挡件52凸出于承载槽510的底部表面的部分向石墨盘中心点O1倾斜设置。这样，止挡件52还可以进一步在竖直方向上对衬底进行限位，防止石墨盘旋转过程中，衬底飞出承载槽510，进一步提高可靠性。
在一个实施例中，凹槽511在垂直于石墨盘本体的厚度方向上的截面为三角形，凹槽511的开口朝向石墨盘本体的中心点O1。这种情况下，止挡件52可以实施为止挡板，结构更简单，拆卸更方便。
以上所述仅为本实用新型的较佳实施例而已，并不用以限制本实用新型，凡在本实用新型的精神和原则之内，所作的任何修改、等同替换等，均应包含在本实用新型的保护范围之内。

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1.一种石墨盘，用于半导体材料的外延生长，其特征在于，包括：
石墨盘本体，包括承载槽和位于所述承载槽远离所述石墨盘本体的中心点一侧的凹槽；和
止挡件，与所述凹槽匹配嵌合，所述止挡件凸出于所述承载槽的底部表面，以形成限位结构。
2.根据权利要求1所述的石墨盘，其特征在于，所述凹槽和所述止挡件之间还设置有隔热层。
3.根据权利要求2所述的石墨盘，其特征在于，所述隔热层包覆所述止挡件。
4.根据权利要求1所述的石墨盘，其特征在于，所述止挡件上设置有导热孔。
5.根据权利要求1所述的石墨盘，其特征在于，所述止挡件包括与所述承载槽的底部表面垂直的止挡面，所述止挡面为曲面。
6.根据权利要求1-5中任一所述的石墨盘，其特征在于，所述承载槽和所述石墨盘本体均为圆形，所述止挡件关于所述石墨盘本体和所述承载槽的中心点连线的延长线对称。
7.根据权利要求6所述的石墨盘，其特征在于，所述止挡件包括与所述承载槽的底部表面垂直的止挡部，所述止挡部与所述承载槽的侧壁之间具有预定间隔。
8.根据权利要求7所述的石墨盘，其特征在于，所述止挡件为L型止挡件，所述L型止挡件的开口背向所述石墨盘本体的中心点。
9.根据权利要求6所述的石墨盘，其特征在于，所述止挡件凸出于所述承载槽的底部表面的部分向所述石墨盘中心点倾斜设置。
10.根据权利要求1-5中任一所述的石墨盘，其特征在于，所述止挡件的材料包括碳化硅和石英中的任一种。
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