CN109478525B - 基板载体 - Google Patents

基板载体 Download PDF

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CN109478525B
CN109478525B CN201780046352.2A CN201780046352A CN109478525B CN 109478525 B CN109478525 B CN 109478525B CN 201780046352 A CN201780046352 A CN 201780046352A CN 109478525 B CN109478525 B CN 109478525B
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substrate carrier
substantially planar
planar body
retaining elements
upper layer
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CN109478525A (zh
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维贾伊·D·帕克赫
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Applied Materials Inc
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Applied Materials Inc
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Abstract

于此提供基板载体及制造所述基板载体的方法的实施方式。在一些实施方式中，基板载体包含实质平面主体；及多个保持元件，所述多个保持元件布置于所述实质平面主体的表面上，其中所述多个保持元件经配置以保持所述实质平面主体的所述表面上的多个基板，且其中所述多个保持元件包含至少三个保持元件，绕着所述多个基板的每一个的对应位置来设置所述至少三个保持元件。

Description

基板载体
技术领域
本公开案的实施方式一般相涉及基板处理设备。
背景技术
使用载体传送欲处理基板至不同腔室及区域，所述载体能够在一时间多个基板的传送。用于发光二极管(LED)应用的氮化铝沉积中使用的一个这种载体为300mm的硅晶片载体，其中使用2至6英寸之间的基板。硅晶片载体由单晶硅形成，以口袋部加工所述载体以载送基板。然而，在处理、清洁及/或翻新期间硅晶片载体易于破裂。选择地，可使用碳化硅(SiC)晶片载体，因为SiC晶片较硅晶片致密约40％。然而，因为增加的密度，SiC晶片较重且因此可损坏上面放置SiC晶片的基板支撑件。SiC晶片载体也可因为形成口袋部而造成载体中的应力而破裂。
据此，发明人提供改良的基板载体的实施方式，如此处所公开。
发明内容
于此提供基板载体及制造所述基板载体的方法的实施方式。在一些实施方式中，基板载体包含实质平面主体；及多个保持元件，所述多个保持元件排列于所述主体的表面上，其中所述多个保持元件经配置以保持所述主体的所述表面上的多个基板，且其中所述多个保持元件包含至少三个保持元件，绕着所述多个基板的每一个的对应位置来设置所述至少三个保持元件。
在一些实施方式中，基板载体包含实质平面主体，在下方层上层叠上方层而形成的所述实质平面主体；及多个口袋部，所述多个口袋部在所述实质平面主体中形成，所述多个口袋部的每一个包含环绕所述口袋部的支撑表面以支撑基板。
在一些实施方式中，基板载体包含实质平面主体，在碳化硅层上层叠钼层而形成的所述实质平面主体；及多个口袋部，所述多个口袋部在所述实质平面主体中形成，所述多个口袋部的每一个包含环绕所述口袋部的支撑表面以支撑基板，其中所述碳化硅层包含穿过所述碳化硅层而形成的两个或更多个孔，且其中所述钼层包含自所述钼层的下方表面延伸进入所述两个或更多个孔的两个或更多个对应突出部。
下方描述本公开案其他及进一步的实施方式。
附图说明
可通过参考本公开案图示的实施方式(描绘于附图中)而理解本公开案的实施方式(简短总结如上且下方更详细讨论)。然而，附图仅图示本公开案典型的实施方式，因此不考虑限制范围，因为本公开案可允许其他等效实施方式。
图1描绘根据本公开案的一些实施方式的基板载体的示意等距视图。
图2描绘根据本公开案的一些实施方式的图1的基板载体沿着线2-2’取得的横截面视图。
图3描绘根据本公开案的一些实施方式的图1的基板载体沿着线2-2’取得的横截面视图。
图4A描绘根据本公开案的一些实施方式的基板载体的示意顶部视图。
图4B描绘图4A的基板载体沿着线B-B’取得的横截面视图。
图5A描绘根据本公开案的一些实施方式的基板载体的示意顶部视图。
图5B描绘图5A的基板载体沿着线B-B’取得的横截面视图。
图6A描绘根据本公开案的一些实施方式的基板载体的示意顶部视图。
图6B描绘图6A的基板载体沿着线B-B’取得的横截面视图。
为了便于理解，尽可能使用相同参考数字以标示图式中常见的相同元件。图式并非依比例绘制且可为了清晰而简化。一个实施方式的元件及特征可有利地并入其他实施方式中，而无须进一步叙述。
具体实施方式
于此提供基板载体的实施方式。发明的基板载体通过在不具有口袋部的基板表面上放置或形成保持元件而优势地减少或消除了在基板载体中形成口袋部相关联的应力。
图1图示根据本公开案的一些实施方式的基板载体100。在一些实施方式中，基板载体100包含实质平面主体102及布置于主体102表面上的多个保持元件104以保持表面上的一个或多个基板106、107(以假想展示)。在一些实施方式中，主体102可由硅、碳化硅或钼来形成。主体102可具有约750微米至约1000微米之间的厚度。在一些实施方式中，主体102可具有约300mm的直径，虽然也可使用其他直径。多个保持元件104防止基板106、107在实质平行于主体102的表面的方向上的移动。绕着每一基板位置设置至少三个保持元件104以确保基板106、107足够保持在适当位置。
保持元件104的位置取决于欲在基板载体100上载送的基板106、107的大小。例如，针对具有主体102(具有300mm的直径)的基板载体，可布置保持元件104以容纳具有约2英寸至约6英寸之间的直径的基板。在图1中所描绘的实例中，基板载体100可经配置以保持呈圆形排列的具有约4英寸和6英寸之间的直径的五个第一基板106及位于主体102中央处的具有约2英寸和4英寸之间的直径的第二基板107。保持元件可形成或耦合至基板载体100的主体102。
图2图示根据本公开案的一些实施方式的图1中沿着线2-2’取得的横截面。在一些实施方式中，保持元件104耦合至主体102。在一些实施方式中，晶片被切成多个片，将每一片使用为保持元件104。在一些实施方式中，保持元件由与主体102相同的材料形成。在一些实施方式中，保持元件由与主体102不同的材料形成。在一些实施方式中，为了便于每一切片耦合至主体102，在主体102表面上视所需布置保持元件104(亦即，以支撑多个基板，如此处所描述)，且接着以约500摄氏度至约1000摄氏度的预先确定温度来加热约10分钟至约240分钟的周期，以将保持元件104扩散键合(diffusion bond)至主体102。在一些实施方式中，时间周期为约120分钟。
在一些实施方式中，每一保持元件104具有约300微米至约500微米之间的厚度。在一些实施方式中，每一保持元件104为具有约2mm至约15mm之间的第一侧及约2mm和约15mm之间的第二侧的正方形或矩形。在一些实施方式中，每一保持元件104为具有约5mm至约10mm之间的第一侧及约5mm和约10mm之间的第二侧的正方形或矩形。在一些实施方式中，每一保持元件可为具有约2mm和约15mm之间的直径的圆形。在一些实施方式中，每一保持元件可为具有约5mm和约10mm之间的直径的圆形。
选择地或组合地，可在主体102表面上形成至少一些保持元件104。例如，保持元件104可使用掩模而被等离子体喷涂至主体102表面上以在所需位置处形成多个保持元件104。喷涂至主体102上以形成多个保持元件104的材料为具有以下材料：所述材料可使用相对容易、足够附着性来喷涂至主体102表面、具有与处理期间置于基板载体100上的基板上所沉积的材料相似的热膨胀系数、及耐清洁/翻新。在一些实施方式中，喷涂材料可为硅、钼、铝、氧化物或类似物。例如，在主体102由硅形成的实施方式中，喷涂材料可为钼，因为钼对硅的附着性优于硅喷涂材料。在一些实施方式中，喷涂的厚度可为约250微米至约500微米。
在一些实施方式中，保持元件104可为三维(3D)打印至主体102表面上。在这个实施方式中，在3D打印之前粗糙化与保持元件104的所需位置对应的主体102表面以改良3D打印材料至主体102的附着性。在一些实施方式中，例如，可使用氢氧化钾(KOH)苛性溶液来粗糙化所需位置。
图3图示根据本公开案的一些实施方式的图1中沿着线2-2’取得的横截面。在图3中所图示的实施方式中，在主体102表面中形成每一保持元件104。例如，可使用电子束或激光以在主体102表面中产生凸块304以形成每一保持元件104。为了达到此效果，自环绕凸块位置的区域305移除(例如，熔化)材料以产生凸块304。结果，区域305包含凹部，材料从所述凹部移除。在一些实施方式中，每一凸块具有约1mm至约10mm或约2mm的厚度。在一些实施方式中，每一凸块具有主体102表面上方约200微米至约500微米的高度。
参考图4A至图4B进行以下描述。图4A描绘根据本公开案的一些实施方式基板载体的示意顶部视图。图4B描绘图4A的基板载体沿着线B-B’取得的横截面视图。在一些实施方式中，具有多个保持元件404的基板载体400可由两个层叠层402a、402b形成以改良基板载体400的刚性。例如，在一些实施方式中，由钼形成且具有第一厚度t1的上方层402a可层叠于由碳化硅形成且具有第二厚度t2的下方层402b上。在一些实施方式中，第一厚度t1可为约0.2mm和约0.5mm之间，且第二厚度t2可小于或等于约1.5mm。在一些实施方式中，基板载体400的总重量可小于约250克。
在一些实施方式中，两个层可经配置以防止两个层的相对移动，且确保层叠期间两个层的适当相对定向。例如，在一些实施方式中，下方层402b可包含两个或更多个孔406(展示两个)，与基板载体400的中央410相距第一距离408以相对于彼此的预先确定角度α来设置所述两个或更多个孔406。在基板载体具有约300mm的直径的实施方式中，第一距离408可为约75mm。在一些实施方式中，预先确定角度α可为相对于彼此约90度和约180度之间。在一些实施方式中，预先确定角度α可为约175度。上方层402a可包含两个或更多个对应突出部407，所述两个或更多个对应突出部407在对应于两个或更多个孔406的位置处自上方层402a的下方表面延伸，使得在上方层402a层叠于下方层402b上时，突出部407延伸进入孔406以正确地相对于彼此放置两个层402a、402b且防止两个层402a、402b的相对移动。
参考图5A至图5B进行以下描述。图5A描绘根据本公开案的一些实施方式基板载体的示意顶部视图。图5B描绘图5A的基板载体沿着线B-B’取得的横截面视图。在一些实施方式中，基板载体500由上方层502a层叠于下方层502b上而形成，如上方相关于基板载体400所述。因此，为了清晰，此处不会描述或在图5A、图5B中表示层的描述及两个层的耦合。然而，基板载体500的层可相似于基板载体400的层而配置。
在一些实施方式中，基板载体500包含多个口袋部506(展示五个)，每一口袋部由向上延伸的轮缘504界定以界定用于支撑基板的支撑表面。通过在上方层502a中形成孔及向上弯曲紧邻于所述孔的上方层502a的部分来形成轮缘504。所得轮缘504的外直径与欲置于轮缘504顶上的基板S的直径约相同(在图5A中以假想展示)。在一些实施方式中，可调整原本在上方层502a中形成的孔的大小，使得所得轮缘的外直径为约4英寸。上方层502a的上方表面上方的轮缘504的高度h1为约0.5mm和约1mm之间。在一些实施方式中，基板载体500可额外地包含相似于相关于上述图1至图4B的保持元件，以防止轮缘504上方设置的基板的径向移动。
参考图6A至图6B进行以下描述。图6A描绘根据本公开案的一些实施方式基板载体的示意顶部视图。图6B描绘图6A的基板载体沿着线B-B’取得的横截面视图。在一些实施方式中，基板载体600由上方层602a层叠于下方层602b上而形成，如上方相关于基板载体400所述。因此，为了清晰，此处不会描述或在图6A、图6B中表示层的描述及两个层的耦合。然而，基板载体600的层可相似于基板载体400的层而配置。除了口袋部606的配置以外，基板载体600相似于基板载体500。
对照基板载体500的口袋部506，口袋部606不包含轮缘。反之，穿过上方层602a形成孔，且仅向上弯曲紧邻于上方层602a的部分以形成多个垂片(tab)604(展示三个)而形成用于支撑基板S的支撑表面(在图6A中以假想展示)。可轴对称地绕着每一口袋部606来设置多个垂片604。环绕多个垂片604的圆的外直径与欲置于多个垂片604顶上的基板S的直径约相同。在一些实施方式中，基板载体600可额外地包含相似于相关于上述图1至图4B的保持元件，以防止多个垂片604上方设置的基板的径向移动。
虽然已描述基板载体的实施方式的特定实例，可使用所公开的实施方式的多种组合或排序。例如，保持元件104可选择地为喷砂(bead-blasted)或自主体102加工出来或处于两层载体，如上述相关于图4A至图6B。进一步地，虽然所公开的实施方式图示特定数量的保持元件或口袋部，发明的基板载体可经配置以容纳视所需尽可能多的基板。
前述针对本公开案的实施方式，可修改本公开案的其他及进一步的实施方式而不远离本公开案的基本范围。

Claims (14)

1.一种基板载体，包括：
实质平面主体；及
多个保持元件，所述多个保持元件布置于所述实质平面主体的周围区域和中央区域的表面上，其中所述多个保持元件经配置以保持所述实质平面主体的所述表面上的多个基板，且其中所述多个保持元件包含至少三个保持元件，绕着所述多个基板的每一个的对应位置来设置所述至少三个保持元件，并且其中所述多个保持元件的设置在所述中央区域中的保持元件配置为部分保持设置在所述中央区域中的第一基板和设置在所述周围区域中呈圆形排列的多个第二基板。
2.如权利要求1所述的基板载体，其中所述实质平面主体由硅、碳化硅或钼形成。
3.如权利要求2所述的基板载体，其中所述多个保持元件的每一个由硅形成且扩散键合至所述实质平面主体。
4.如权利要求2所述的基板载体，其中所述多个保持元件的每一个由喷涂至所述实质平面主体上的硅、钼、铝或氧化物形成。
5.如权利要求1至4的任一项所述的基板载体，其中所述多个保持元件的每一个为在所述实质平面主体的所述表面中形成的凸块。
6.如权利要求2所述的基板载体，其中所述多个保持元件三维打印至所述实质平面主体上。
7.如权利要求1至4的任一项所述的基板载体，其中所述实质平面主体包含在下方层上方层叠的上方层。
8.如权利要求7所述的基板载体，其中所述上方层具有0.2mm和0.5mm之间的第一厚度，且所述下方层具有小于或等于1.5mm的第二厚度。
9.如权利要求7所述的基板载体，其中所述上方层由钼形成，且所述下方层由碳化硅形成。
10.如权利要求7所述的基板载体，其中所述下方层包含穿过所述下方层而形成的两个或更多个孔，且所述上方层包含自所述上方层的下方表面延伸进入所述两个或更多个孔的两个或更多个对应突出部。
11.如权利要求10所述的基板载体，其中以相对于彼此的一预先确定角度设置所述两个或更多个孔。
12.如权利要求11所述的基板载体，其中所述预先确定角度为90度和180度之间。
13.一种基板载体，包括：
实质平面主体，在下方层上层叠上方层而形成所述实质平面主体；及
多个口袋部，所述多个口袋部在所述实质平面主体中形成，所述多个口袋部的每一个包含环绕所述口袋部的支撑表面以支撑基板，以及
其中由界定所述口袋部的轮缘来形成所述支撑表面，其中通过形成穿过所述上方层的孔且向上弯曲所述上方层紧接地环绕所述孔来形成所述轮缘。
14.一种基板载体，包括：
实质平面主体，在下方层上层叠上方层而形成所述实质平面主体；及
多个口袋部，所述多个口袋部在所述实质平面主体中形成，所述多个口袋部的每一个包含环绕所述口袋部的支撑表面以支撑基板，以及
其中由多个垂片来形成所述支撑表面，其中通过形成穿过所述上方层的孔且向上弯曲相邻于所述孔的所述上方层的部分来形成所述多个垂片的每一个。
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WO2018013421A1 (en) 2018-01-18
KR102277918B1 (ko) 2021-07-14
US20180012790A1 (en) 2018-01-11
EP3482415A1 (en) 2019-05-15
JP2019522370A (ja) 2019-08-08
KR102386746B1 (ko) 2022-04-14
JP6989587B2 (ja) 2022-01-05
TW201812959A (zh) 2018-04-01
CN109478525A (zh) 2019-03-15
TWI744351B (zh) 2021-11-01
KR20210088766A (ko) 2021-07-14
US11676849B2 (en) 2023-06-13
US20200066571A1 (en) 2020-02-27
KR20190016620A (ko) 2019-02-18
EP3482415A4 (en) 2020-02-26

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