WO2017217309A1 - 曝露面積増大石英ガラス部材及びその製造方法並びにマルチ外周刃ブレード - Google Patents

曝露面積増大石英ガラス部材及びその製造方法並びにマルチ外周刃ブレード Download PDF

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Publication number
WO2017217309A1
WO2017217309A1 PCT/JP2017/021265 JP2017021265W WO2017217309A1 WO 2017217309 A1 WO2017217309 A1 WO 2017217309A1 JP 2017021265 W JP2017021265 W JP 2017021265W WO 2017217309 A1 WO2017217309 A1 WO 2017217309A1
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WIPO (PCT)
Prior art keywords
quartz glass
glass member
blade
exposed area
diamond abrasive
Prior art date
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PCT/JP2017/021265
Other languages
English (en)
French (fr)
Inventor
昭禎 土田
藤井　紀和
佳紀 牧田
Original Assignee
信越石英株式会社
株式会社福井信越石英
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Publication date
Application filed by 信越石英株式会社, 株式会社福井信越石英 filed Critical 信越石英株式会社
Priority to US16/310,046 priority Critical patent/US20190321932A1/en
Priority to JP2018523845A priority patent/JP7002449B2/ja
Priority to EP17813207.2A priority patent/EP3471131A4/en
Priority to CN201780036879.7A priority patent/CN109314056B/zh
Priority to KR1020187037614A priority patent/KR102361352B1/ko
Publication of WO2017217309A1 publication Critical patent/WO2017217309A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/02—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/02—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
    • B24B19/03—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements for grinding grooves in glass workpieces, e.g. decorative grooves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • B24D3/346—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties utilised during polishing, or grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements

Definitions

  • the present invention relates to a quartz glass member for exposure that is placed in a reaction chamber together with the semiconductor substrate to be film-formed during the film-forming process of a semiconductor substrate, and has a film-forming treatment gas rather than a flat surface.
  • the present invention relates to a quartz glass member having an increased exposure area in which the increased exposure area is controlled so that the amount of adsorption to the surface is constant, a manufacturing method thereof, and a multi-peripheral blade blade used therein.
  • a semiconductor substrate such as a silicon wafer.
  • CVD Chemical Vapor Deposition
  • a semiconductor substrate is placed on a wafer holding jig called a wafer boat or a susceptor and carried into a reaction chamber, and the film formation process is performed.
  • a wafer boat is made of quartz glass, which is a material that does not react with the processing gas, and a semiconductor substrate is placed on the wafer boat and does not react with the processing gas.
  • the semiconductor substrate is housed in a reaction chamber together with a member made of quartz glass, which is a material, and a film forming process is performed.
  • Patent Document 1 An example of such a film forming method is shown in Patent Document 1.
  • Such technology is generally a member for the purpose of reducing the variation in the gas flow to the wafer.
  • the film is accumulated like the semiconductor substrate, and foreign matter is generated due to peeling or damage due to the expansion difference of the film. Has become a problem, and various innovations have been made.
  • the surface of a semiconductor substrate subjected to film formation is uneven due to the treatment, and the surface area is increased compared to a semiconductor substrate with a flat surface.
  • the quartz glass member can achieve uniform film formation on a uniform semiconductor substrate by controlling the amount of film gas adsorbed rather than reducing the variation in gas flow.
  • the present invention has been made in view of the above-described problems of the prior art, and increases the exposure area to the film-forming treatment gas as compared with a flat surface and increases the amount of adsorption to the surface to be constant. It is an object of the present invention to provide an exposed area-enhanced quartz glass member in which an exposed area is controlled, a method for producing the same, and a multi-peripheral blade used therein.
  • the quartz glass member having an increased exposed area is placed in a reaction chamber together with the semiconductor substrate to be film-formed in a film-forming process of a semiconductor substrate, and is used for film-forming process gas exposure that is exposed to a film-forming process gas.
  • An exposure comprising a quartz glass member having a quartz glass member main body and a plurality of irregularities formed on a surface of the quartz glass member main body, wherein the exposure area to the film forming process gas is controlled and increased. This is an area-enlarged quartz glass member.
  • the exposure area is preferably controlled such that the amount of film forming process gas adsorbed to the exposed surface is constant.
  • the plurality of uneven portions to be controlled and increased have a groove shape, and the range of variations in the groove width and depth of the groove is within ⁇ 20%.
  • the method for producing an exposed area-enhanced quartz glass member of the present invention is a method for producing the exposed area-enhanced quartz glass member, wherein a plurality of grooves are simultaneously formed on the surface of the quartz glass member body using a multi-peripheral blade.
  • a multi-peripheral blade By this, it is the manufacturing method of the exposure area increase quartz glass member formed by forming a some uneven
  • the surface area of the single-sided surface of the quartz glass member having an increased exposed area obtained by the grooving is three times the surface area of the single-sided surface of the quartz glass member having an increased exposed area before the grooving. The above is preferable.
  • the multi-peripheral blade of the present invention is a multi-peripheral blade for performing grooving in the method for producing an exposed area-enhanced quartz glass member, and includes a single disk-shaped base metal part and the disk-shaped base metal part.
  • a multi-peripheral blade having a diamond abrasive layer base formed on an outer periphery and a diamond abrasive blade formed integrally with a plurality of blades protruding from the diamond abrasive layer base.
  • the ratio of the blade thickness to the blade length of each blade of the diamond abrasive blade portion is 1: 5 or more.
  • the diamond abrasive layer base has a thickness that is twice or more the blade length of each blade of the diamond abrasive blade.
  • an arc-shaped depression is formed on the surface of the base of the diamond abrasive layer between the plurality of blades.
  • the manufacturing method and the multi-peripheral blade used in the manufacturing method can be provided.
  • FIG. It is a schematic plan view which shows the example of the exposure area increase quartz glass member of this invention, (a) and (b) shows an annular plate shape, (c) and (d) show an example of a disk shape.
  • An example of the groove processing of the exposure area increase quartz glass member of this invention is shown, (a) is an enlarged schematic diagram which shows the surface where the groove processing was performed, (b) is an expansion schematic which shows the surface before groove processing is performed.
  • FIG. It is a figure which shows the multi outer periphery blade of this invention, Comprising: (a) is a schematic perspective view, (b) is a schematic front view. It is a principal part expansion schematic sectional drawing of the multi outer periphery blade of this invention.
  • reference numeral 10 denotes an exposed area increasing quartz glass member of the present invention.
  • the exposed area increasing quartz glass member 10 is placed in the reaction chamber 12 together with the semiconductor substrate W to be formed and exposed to the film forming process gas.
  • a quartz glass member having a quartz glass member main body 14 and a plurality of concavo-convex portions 16 formed on the surface of the quartz glass member main body 14, and an exposure area to a film forming process gas is increased. This is an increased exposed area quartz glass member.
  • the shape of the quartz glass member main body 14 is not particularly limited, and the member shape for controlling the film forming process gas and the processing of the concavo-convex portion may be appropriately selected based on the film forming conditions.
  • a circular plate shape or a polygonal plate shape is used.
  • FIGS. 1A and 1B show an example of a circular plate shape (annular plate shape) having a hollow portion in the center in plan view, and FIGS.
  • the example of the disk shape (wafer shape) which does not have a hollow part in the center was shown.
  • reference numeral 52 denotes a hollow portion
  • the quartz glass member main body 14 of the annular glass-shaped exposed area increasing quartz glass member 10A has a circular shape having a hollow portion in the center.
  • equidistant parallel grooves 18 are formed as a plurality of uneven portions 16.
  • the exposed area-enhanced quartz glass member 10B of FIG. 1 (b) is the same as the exposed area-enhanced quartz glass member 10A of FIG. 1 (a) except that 90 ° cross-shaped grooves 18 are formed as the plurality of uneven portions 16. It is the same.
  • the quartz glass member body 14 of the quartz glass member 10C having an increased exposure area in FIG. 1C has a disk shape that does not have a hollow portion in the center in a plan view.
  • the exposed area increasing quartz glass member 10D of FIG. 1 (d) is the same as the exposed area increasing quartz glass member 10C of FIG. 1 (c) except that 90 ° cross-shaped grooves 18 are formed as the plurality of uneven portions 16. It is the same.
  • a groove shape is preferable.
  • the groove shape may be any of a straight line shape, a curved line shape, a circumferential shape, a broken wire shape, and the like, and is not particularly limited, but a straight line shape is preferable.
  • the plurality of straight lines may be parallel or crossed, but as shown in FIGS. 1A to 1D, a parallel or cross shape is preferable. Further, a plurality of types of shapes may be used in combination.
  • the grooves 18 are formed with a plurality of concavo-convex portions 16 by precision groove processing or the like, but may be formed on only one side of the quartz glass member main body 14 or on both sides.
  • the plurality of uneven portions 16 may be formed on the entire surface of the quartz glass member main body 14 or may be partially formed. However, the plurality of uneven portions 16 are formed on the entire surface or at least the outer peripheral portion of the surface. Is preferable.
  • FIG. 2 shows a surface on which one side of the exposed area increasing quartz glass member 10 has been subjected to grooving and a surface before the grooving.
  • FIG. 2 (a) when the groove 18 is formed on the surface 20 on one side by groove processing, compared to the flat surface 22 before groove processing as shown in FIG. 2 (b), The surface area is increased by the inner side surfaces 24a and 24b of the groove 18. Therefore, when the groove 18 is formed on the surface 20 as shown in FIG. 2A, compared to the flat surface 22 before the groove processing as shown in FIG. The area to be increased will be increased. Therefore, the width and depth of the groove 18 are important factors for precise control of the increasing exposure area and, hence, the amount of film forming process gas adsorbed.
  • the width and depth of the groove 18 are 0.05 mm to 1.5 mm, and can be appropriately selected according to the area to be increased corresponding to the required amount of adsorption, but the groove depth is 1: If it exceeds 10, the process gas to be adsorbed is not stably supplied to the groove bottom, and conversely if it is smaller than 1: 1, the effect of increasing the area cannot be sufficiently obtained. Therefore, the groove width: groove depth is preferably 1: 1 to 1:10, more preferably 1: 1.5 to 1: 7. Further, in order to precisely control the increased area and the amount of adsorption, the accuracy of the groove width and the groove depth is important, and the variation in the groove width and the groove depth does not exceed ⁇ 20% of the respective required values. And is more preferably within ⁇ 10%.
  • a plurality of grooves can be simultaneously processed on the surface 20 of the quartz glass member main body 14 using a multi-periphery blade.
  • reference numeral 26 denotes a multi-peripheral blade of the present invention.
  • the multi-peripheral blade blade 26 includes a single disc-shaped base metal portion 28, a diamond abrasive layer base portion 32 formed on the outer peripheral portion 30 of the disc-shaped base metal portion 28, and a plurality of diamond abrasive layer base portions 32. And a diamond abrasive blade portion 36 formed integrally with the blade 34.
  • the disc-shaped base 28 is integrally formed of a single metal, and an insertion hole 38 through which the rotation shaft is inserted is opened at the center.
  • the diamond abrasive layer base 32 and the diamond abrasive blade 36 are formed by fixing diamond abrasive grains. In order to fix the diamond abrasive grains, the diamond abrasive grains can be fixed by sintering with a metal bond or electrodeposition.
  • FIG. 4 shows an enlarged view of the diamond abrasive layer base 32 and the diamond abrasive blade 36.
  • the diamond abrasive blade portion 36 preferably has a ratio of the blade thickness D to the blade length L of each blade 34 of the diamond abrasive blade portion 36 of 1: 5 or more and less than 1:20.
  • the number of the blades 34 of the diamond abrasive blade part 36 there is no particular limitation on the number of the blades 34 of the diamond abrasive blade part 36.
  • the number of blades may be three or more and less than 30. Increasing the number of blades will increase the number of grooves that can be simultaneously grooved. However, if the number of blades is increased too much, the degree of wear of each blade during processing will vary, and variations in the width and depth of the grooves to be processed will increase. . In the example of FIG. 3, an example in which the blade 34 has four continuous blades is shown, and in the example in FIG. 4, an example in which the blade 34 has six continuous blades is shown.
  • the diamond abrasive layer base 32 preferably has a thickness T that is twice or more the blade length L of each blade 34 of the diamond abrasive blade 36.
  • an arcuate recess 40 is formed on the surface of the diamond abrasive layer base 32 between the plurality of blades 34. This is because the removal of chips and the like when cutting is improved, the processing load can be suppressed and the blade runout can be reduced, and the processing accuracy is improved.
  • FIG. 9 shows a conventional multi-peripheral blade 100.
  • the conventional multi-peripheral blade 100 is a multi-peripheral blade by assembling a plurality of single peripheral blades 102 a, 102 b, 102 c, 102 d, 102 e via the spacer 104.
  • Each of the single outer peripheral blades 102a, 102b, 102c, 102d, 102e has a disk-shaped base metal part 106a, 106b, 106c, 106d, 106e, and the disk-shaped base metal parts 106a, 106b.
  • 106c, 106d, 106e are provided with diamond abrasive blades 108a, 108b, 108c, 108d, 108e.
  • the disk-shaped base metal part 28 is made a single unit without using a spacer, and the diamond abrasive layer base 32 is provided on the outer peripheral part 30 of the disk-shaped base metal part 28. Further, a diamond abrasive blade 36 is provided on the outer periphery of the diamond abrasive layer base 32.
  • the multi-peripheral blade blade 26 When the multi-peripheral blade blade 26 is used to cross the surface of the quartz glass member main body 14 while rotating the multi-peripheral blade blade 26 as shown in FIG. 5, a plurality of grooves are simultaneously formed by the diamond abrasive blade portion 36. Processing can be performed.
  • FIG. 7 shows an example of a vertical heat treatment furnace.
  • the vertical heat treatment furnace 42 includes a reaction chamber 12 made of quartz, a gas introduction pipe 44 for introducing a gas such as a film forming process gas into the reaction chamber 12, a heater 46 for heating the reaction chamber 12, and the A gas exhaust pipe 48 for exhausting the gas in the reaction chamber 12.
  • a wafer boat 50 is carried into the reaction chamber 12.
  • a plurality of semiconductor substrates W (for example, silicon wafers) are placed on the wafer boat 50.
  • the exposed area increasing quartz glass member 10 of the present invention is placed on the upper and lower placement portions of the wafer boat 50.
  • a film forming process gas is introduced into the reaction chamber 12 from the gas introduction pipe 44, and a film forming process such as CVD is performed on the semiconductor substrate W. Since the semiconductor substrate W on which the film forming process is performed has irregularities formed on the surface by the process, and the exposure area increasing quartz glass member 10 has an increased exposure area to the film forming processing gas, Film formation becomes uniform.
  • Examples 1 to 10 A single disk-shaped base metal part, a diamond abrasive layer part formed on the outer periphery of the disk-shaped base metal part, and a plurality of blades are integrally provided protruding from the base part of the diamond abrasive layer part.
  • a multi-peripheral blade of the present invention having a diamond abrasive blade portion by metal bond was prepared.
  • a quartz glass member having an increased exposed area according to the present invention in which a plurality of concave and convex portions were formed was manufactured. Table 1 shows details of the multi-peripheral blades of Examples 1 to 10 and the quartz glass member having an increased exposure area.
  • the shape Y is the member specification: the entire surface of the concavo-convex processed surface, 90 ° cross, pitch 0.5 mm, quartz glass member body outer diameter (OD) 340 mm ⁇ inner diameter (ID) 302 mm ⁇ thickness t0.8 mm
  • the shape X is a member specification: the entire surface of the concave / convex processed one side, parallel, pitch 0.5 mm, quartz glass member outer diameter (OD) 300 mm ⁇ thickness t0.8 mm (disc) State).
  • BW MAX maximum% of groove width variation (absolute value)
  • BD MAX maximum% of groove depth variation (absolute value)
  • D blade thickness
  • L blade length
  • T base thickness.
  • Example 1-5 A conventional multi-peripheral blade shown in FIG. 9 in which a plurality of single blades are assembled via spacers was prepared. Using these multi-peripheral blades, members having the same shapes Y and X as in Examples 1 to 10 were produced. Table 2 shows details of the multi-peripheral blades and the exposed area-enhanced quartz glass members of Experimental Examples 1 to 5. In Table 2, S is the full width after assembling the spacer and the blade.
  • Example 11 By using the same method as in Example 2, an annular plate-shaped exposed area increasing quartz glass member was prepared, and a nitride film forming test was performed using the film forming apparatus shown in FIG. The effect of processing gas adsorption on the member was verified. As shown in FIG. 8, an annular plate-shaped exposed area increasing quartz glass member 10 is placed on a susceptor 51, and a film forming process is performed in the hollow portion 52 of the annular plate-shaped increasing exposed area quartz glass member 10. The semiconductor substrate W which is a thing was arrange
  • Example 12 The experiment was performed in the same manner as in Example 11 except that a ring-plate-shaped exposed area increasing quartz glass member obtained by the same method as in Experimental Example 3 was used. The results are shown in Table 3.
  • Example 11 and 12 have a greater effect of suppressing the increase in the thickness of the outer periphery due to the increase in the exposed area. Further, compared with Example 11 in which the ratio of groove depth to groove width is 5 times, that is, less than 10 times desirable, Example 12 of 10 times or more has a deeper groove depth and more area. In spite of this, it has been found that the effect of suppressing the thickening of the outer periphery is reduced, and there is a difference in the efficiency of the adsorption effect.
  • Example 13 to 15 Regarding the variation in the groove and the amount of adsorption of the quartz glass member with an increased exposed area, the variation in the amount of adsorption was verified by the difference in the residual weight of the surface of pure water adhering to the treatment gas. Evaluation was performed in the following steps 1) to 5). 1) Fill a water tank with predetermined pure water and measure the weight. 2) The quartz glass member (shapes Y and X) is immersed in a water tank containing pure water and held in water for 10 minutes. 3) The product is then lifted from the water surface, separated from the water surface on the water tank, held for 60 seconds, and drops of water leaving the member are dropped into the water tank.
  • Example 4 The weight including the residual pure water of the water tank after removing the member after the process of 3) is measured. 5) The difference between the weight of 1) and the weight of 4) is defined as the adsorption weight of pure water on the quartz glass member. This was repeated 10 times for each quartz glass member, and the adsorption weight was verified by MAX-MIN and average. For each quartz glass member, a quartz glass member with an increased exposed area obtained by the same method as Example 13: Example 2, Example 14: Example 6, and Example 15: Example 9 was used. The results are shown in Table 4.
  • Comparative Example 2 Experiments were performed in the same manner as in Examples 13 to 15 except that an annular plate-like quartz glass member without grooves similar to that in Comparative Example 1 was used. The results are shown in Table 4.
  • 10, 10A to 10D Exposed area increasing quartz glass member, 12: Reaction chamber, 14: Quartz glass member body, 16: Concavity and convexity, 18: Groove, 20: Surface after groove processing, 22: Surface before groove processing, 24a, 24b: inner surface, 26: multi-peripheral blade of the present invention, 28: disk-shaped base metal part, 30: outer peripheral part, 32: diamond abrasive layer base, 34: blade, 36: diamond abrasive blade part, 38: insertion hole, 40: arc-shaped depression, 42: vertical heat treatment furnace, 44: gas introduction pipe, 46: heater, 48: gas exhaust pipe, 50: wafer boat, 51: susceptor, 52: hollow part, 100 : Conventional multi-peripheral blade, 102a, 102b, 102c, 102d, 102e: single peripheral blade, 104: spacer, 106a, 106b, 106c, 106d, 106e: disk-shaped base metal part 108a, 108b,

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Abstract

表面が平坦なものよりも成膜処理ガスへの曝露面積を増大させると共に、表面への吸着量が一定になるように増大曝露面積が制御された曝露面積増大石英ガラス部材、その製造方法及びそれに用いられるマルチ外周刃ブレードを提供する。　半導体基板の成膜処理において、成膜処理される前記半導体基板と共に反応室内に載置され、成膜処理ガスに曝露される成膜処理ガス曝露用の石英ガラス部材であり、石英ガラス部材本体と、前記石英ガラス部材本体の表面に形成された複数の凹凸部と、を有し、成膜処理ガスへの曝露面積が制御されて増大されてなる曝露面積増大石英ガラス部材とした。

Description

曝露面積増大石英ガラス部材及びその製造方法並びにマルチ外周刃ブレード
　本発明は、半導体基板の成膜処理の際に、成膜処理される前記半導体基板と共に反応室内に載置される曝露用石英ガラス部材であって、表面が平坦なものよりも成膜処理ガスへの曝露面積を増大させると共に、表面への吸着量が一定になるように増大曝露面積が制御された曝露面積増大石英ガラス部材、その製造方法及びそれに用いられるマルチ外周刃ブレードに関する。
　従来、半導体デバイスの製造工程において、シリコンウェーハ等の半導体基板に対して、例えばＣＶＤ（Chemical Vapor Deposition）などの種々の成膜処理が行われる。かかる成膜処理にあたっては、例えばウェーハボートあるいはサセプターと呼ばれるウェーハ保持治具に半導体基板を載置して反応室へと搬入し、成膜処理が行われる。
　このような、ウェーハ保持治具を用いた成膜処理においては、処理ガスと反応しない材質である石英ガラスでウェーハボートを作成し、かかるウェーハボートに半導体基板を載置し、処理ガスと反応しない材質である石英ガラスで製作された部材とともに前記半導体基板を反応室に収容し、成膜処理が行われることがある。このような成膜方法の例を特許文献１に示す。
　かかる技術は、一般にウェーハへのガスの流れのバラツキ低減する目的の部材であるが、成膜処理においては、半導体基板と同様に膜が累積付着し剥離による異物の発生や膜の膨張差による破損が問題となり、様々な工夫がなされている。
　ところが、成膜処理される半導体基板は、処理によって表面に凹凸が形成され、表面が平坦な半導体基板と比べて表面積が増大していることから、半導体基板への成膜を均一とするためには、反応室内で成膜処理ガスに曝露される石英ガラス部材も、その表面積を増大させて、成膜処理ガスの吸着量を半導体基板の表面の凹凸に合わせて制御したいというニーズがあった。
　さらに、成膜による膜厚が薄膜化するにつれて、石英ガラス部材にはガスの流れのバラツキの低減よりも、成膜ガスの吸着量の制御による均一な半導体基板への均一な成膜の達成が課題となっており、かかる石英ガラス部材の成膜処理ガス曝露面積を増大させ、かつ成膜処理ガスの吸着を精密に制御するにあたり、精度良く且つ生産効率良くその表面積を増大させた石英ガラス部材とすることは極めて困難であった。
特開平７－９９１５７
　本発明は、上記した従来技術の問題点に鑑みなされたもので、表面が平坦なものよりも成膜処理ガスへの曝露面積を増大させると共に、表面への吸着量が一定になるように増大曝露面積が制御された曝露面積増大石英ガラス部材、その製造方法及びそれに用いられるマルチ外周刃ブレードを提供することを目的とする。
　本発明の曝露面積増大石英ガラス部材は、半導体基板の成膜処理において、成膜処理される前記半導体基板と共に反応室内に載置され、成膜処理ガスに曝露される成膜処理ガス曝露用の石英ガラス部材であり、石英ガラス部材本体と、前記石英ガラス部材本体の表面に形成された複数の凹凸部と、を有し、成膜処理ガスへの曝露面積が制御されて増大されてなる曝露面積増大石英ガラス部材である。前記曝露面積の制御は、成膜処理ガスの曝露面表面への吸着量が一定になるように制御することが好適である。
　前記制御されて増大される複数の凹凸部が溝形状であり、当該溝の溝幅と溝深さのバラツキの範囲が、各±２０％以内であることが好適である。
　本発明の曝露面積増大石英ガラス部材の製造方法は、前記曝露面積増大石英ガラス部材の製造方法であり、マルチ外周刃ブレードを用いて、前記石英ガラス部材本体の表面に同時に複数の溝加工を行うことにより、複数の凹凸部を形成してなる曝露面積増大石英ガラス部材の製造方法である。
　前記溝加工により得られた曝露面積増大石英ガラス部材の溝加工が行われた片面の表面積が、前記溝加工が行われる前の前記曝露面積増大石英ガラス部材の前記片面の表面積と比べて３倍以上であるのが好適である。
　本発明のマルチ外周刃ブレードは、前記曝露面積増大石英ガラス部材の製造方法における溝加工を行うためのマルチ外周刃ブレードであり、単一の円盤状台金部と、前記円盤状台金部の外周部に形成されたダイヤモンド砥粒層基部と、前記ダイヤモンド砥粒層基部から複数の刃が突出して一体的に設けられてなるダイヤモンド砥粒刃部と、を有する、マルチ外周刃ブレードである。
　前記ダイヤモンド砥粒刃部の各刃の刃厚と刃長の比が１：５以上であるのが好適である。
　前記ダイヤモンド砥粒層基部が、前記ダイヤモンド砥粒刃部の各刃の刃長の２倍以上の厚さを有するのが好適である。
　前記複数の刃と刃の間の前記ダイヤモンド砥粒層基部の表面に円弧状の窪みが形成されてなるのが好適である。
　本発明によれば、表面が平坦なものよりも成膜処理ガスへの曝露面積を増大させると共に、表面への吸着量が一定になるように増大曝露面積が制御された曝露面積増大石英ガラス部材、その製造方法及びそれに用いられるマルチ外周刃ブレードを提供することができるという著大な効果を奏する。
本発明の曝露面積増大石英ガラス部材の例を示す概略平面図であり、（ａ）及び（ｂ）は円輪板状、（ｃ）及び（ｄ）は円板状の例を示す。 本発明の曝露面積増大石英ガラス部材の溝加工の一例を示し、（ａ）は溝加工が行われた表面を示す拡大模式図、（ｂ）は溝加工が行われる前の表面を示す拡大模式図である。 本発明のマルチ外周刃ブレードを示す図であって、（ａ）が概略斜視図、（ｂ）が概略正面図である。 本発明のマルチ外周刃ブレードの要部拡大模式断面図である。 本発明のマルチ外周刃ブレードを用いて、複数の溝加工を行う様子を示す平面模式図である。 本発明のマルチ外周刃ブレードを用いて、複数の溝加工を行う様子を示す側面模式図である。 縦型熱処理炉の一例を示す概略図である。 実施例１１、１２及び比較例１で用いた成膜処理装置を示す概略断面図である。 従来のマルチ外周刃ブレードを示す概略正面図である。
　以下に本発明の実施の形態を説明するが、これら実施の形態は例示的に示されるもので、本発明の技術思想から逸脱しない限り種々の変形が可能なことはいうまでもない。図示において、同一部材は同一符号であらわされる。
　図１（ａ）～（ｄ）、図７及び図８において、符号１０は、本発明の曝露面積増大石英ガラス部材である。曝露面積増大石英ガラス部材１０は、半導体基板Ｗの成膜処理において、成膜処理される前記半導体基板Ｗと共に反応室１２内に載置され、成膜処理ガスに曝露される成膜処理ガス曝露用の石英ガラス部材であり、石英ガラス部材本体１４と、前記石英ガラス部材本体１４の表面に形成された複数の凹凸部１６と、を有し、成膜処理ガスへの曝露面積が増大されてなる曝露面積増大石英ガラス部材である。
　本発明において、石英ガラス部材本体１４の形状は特に制限はなく、成膜条件に基づいて成膜処理ガスを制御するための部材形状及び凹凸部の加工を適宜選択すればよいが、板状が好ましく、例えば、円形の板状又は多角形の板状等が挙げられる。図示の例では、図１（ａ），（ｂ）に平面視で中央に中空部を有する円形の板状（円輪板状）の例を示し、図１（ｃ），（ｄ）に平面視で中央に中空部を有さない円板状（ウェーハ状）の例を示した。
　図１（ａ）において、符号５２は中空部であり、円輪板状の曝露面積増大石英ガラス部材１０Ａの石英ガラス部材本体１４は、中央に中空部を有する円形の形状をしており、該石英ガラス部材本体１４の表面全面に、複数の凹凸部１６として等間隔の平行の溝１８が形成されている。図１（ｂ）の曝露面積増大石英ガラス部材１０Ｂは、複数の凹凸部１６として９０°のクロス状の溝１８が形成されている以外は図１（ａ）の曝露面積増大石英ガラス部材１０Ａと同様である。
　図１（ｃ）の曝露面積増大石英ガラス部材１０Ｃの石英ガラス部材本体１４は平面視で中央に中空部を有さない円板状であり、該石英ガラス部材本体１４の表面全面に、複数の凹凸部１６として等間隔の平行の溝１８が形成されている。図１（ｄ）の曝露面積増大石英ガラス部材１０Ｄは、複数の凹凸部１６として９０°のクロス状の溝１８が形成されている以外は図１（ｃ）の曝露面積増大石英ガラス部材１０Ｃと同様である。
　図示では、複数の凹凸部１６として等間隔で複数の溝１８が形成されている例を示したが、成膜処理ガスの吸着量を制御するために、中央と周囲で間隔を変えても良い。複数の凹凸部１６、表面に複数の凹凸が形成されていればよく、その形状に特に制限はないが、溝形状が好ましい。溝形状は、直線状や曲線状、円周状、断線状等のいずれでも良く特に制限はないが、直線状が好適である。複数の直線は平行でもよく、交差していてもよいが、図１（ａ）～（ｄ）に示した如く、平行又はクロス状が好ましい。また、複数種の形状を組み合わせて用いても良い。
　溝１８は、精密な溝加工等により複数の凹凸部１６を形成するが、石英ガラス部材本体１４の片面だけに形成しても両面に形成してもよい。また、複数の凹凸部１６は石英ガラス部材本体１４の表面全面に形成してもよく、部分的に形成してもよいが、表面全面又は少なくとも表面の外周部に複数の凹凸部１６が形成されることが好適である。
　曝露面積増大石英ガラス部材１０の片面に溝加工が行われた表面と、前記溝加工を行う前の表面とを図２に示す。
　図２（ａ）に示されるように、溝加工により、片面の表面２０に溝１８が形成されていると、図２（ｂ）に示すような溝加工前の平坦な表面２２に比べて、溝１８の内側面２４ａ，２４ｂの分だけ表面積が増大する。従って、図２（ａ）のように、表面２０に溝１８が形成されていると、図２（ｂ）に示すような溝加工前の平坦な表面２２に比べて、成膜処理ガスに曝露される面積が増大することとなる。よって、溝１８の幅や深さは、増大する曝露面積、ひいては成膜処理ガスの吸着量の精密な制御には重要な要素になる。
　例えば、溝１８の幅や深さは０．０５ｍｍ～１．５ｍｍで、要求される吸着量に対応する増大させる面積に合わせて、適宜選択出来るが、溝幅に対して溝深さが１：１０を超えると、吸着する処理ガスが溝底まで安定して供給されず、逆に１：１より小さいと、面積増大の効果が充分に得られない。よって、溝幅：溝深さが１：１～１：１０が好ましく、１：１．５～１：７がより好ましい。
　また、増大面積ひいては吸着量を精密に制御するためには、溝幅と溝深さの精度が重要であり、溝幅と溝深さのバラツキは、それぞれの要求値の±２０％を超えないのが好適であり、±１０％以内であることがより好適である。
　曝露面積増大石英ガラス部材１０の表面２０に複数の溝１８を加工するにあたっては、マルチ外周刃ブレードを用いて、前記石英ガラス部材本体１４の表面２０に同時に複数の溝加工を行うことができる。
　図３～図５において、符号２６は本発明のマルチ外周刃ブレードを示す。マルチ外周刃ブレード２６は、単一の円盤状台金部２８と、前記円盤状台金部２８の外周部３０に形成されたダイヤモンド砥粒層基部３２と、前記ダイヤモンド砥粒層基部３２から複数の刃３４が突出して一体的に設けられてなるダイヤモンド砥粒刃部３６と、を有する。
　円盤状台金部２８は単一の金属で一体的に構成されており、中央には回転軸が挿通される挿通孔３８が開穿されている。ダイヤモンド砥粒層基部３２及びダイヤモンド砥粒刃部３６は、ダイヤモンド砥粒を固着させることで形成されている。ダイヤモンド砥粒を固着させるには、ダイヤモンド砥粒をメタルボンドで焼結したり或いは電着させたりすることで固着させることができる。円盤状台金部２８は単一の金属で一体的に構成することで、マルチ外周刃ブレードを高速回転させた際の刃振れを極めて小さく抑えることができる。
　前記ダイヤモンド砥粒層基部３２及び前記ダイヤモンド砥粒刃部３６の拡大図を図４に示す。前記ダイヤモンド砥粒刃部３６としては、前記ダイヤモンド砥粒刃部３６の各刃３４の刃厚Ｄと刃長Ｌの比が１：５以上１：２０未満であるのが好適である。
　ダイヤモンド砥粒刃部３６の刃３４の数に特別の限定はないが、例えば３連刃以上３０連刃未満ぐらいの数で刃を設けるようにすればよい。刃の数を増やせば同時に溝加工できる溝の数が増えることになるが、あまり増やすと加工時の各刃の摩耗度合いがばらつき、加工する溝の幅、深さのバラツキを増大させることになる。図３の例では刃３４を４連刃とした例を示し、図４の例では刃３４を６連刃とした例を示した。
　また、前記ダイヤモンド砥粒層基部３２は、前記ダイヤモンド砥粒刃部３６の各刃３４の刃長Ｌの２倍以上の厚さＴを有するのが好適である。
　さらに、前記複数の刃３４と刃３４の間の前記ダイヤモンド砥粒層基部３２の表面に円弧状の窪み４０が形成されてなるのが好適である。切削した際の切り粉等の抜けが向上し、加工負荷を抑えて刃振れを低減出来、加工精度が向上するからである。
　このように構成した本発明のマルチ外周刃ブレード２６は、従来のマルチ外周刃ブレードと比べて、精度良く溝加工を行うことができる。図９に従来のマルチ外周刃ブレード１００を示す。従来のマルチ外周刃ブレード１００は、複数の単一外周刃ブレード１０２ａ，１０２ｂ，１０２ｃ，１０２ｄ，１０２ｅがスペーサ１０４を介して組み付けられることにより、マルチ外周刃ブレードとされている。そして、各単一外周刃ブレード１０２ａ，１０２ｂ，１０２ｃ，１０２ｄ，１０２ｅは、それぞれが円盤状台金部１０６ａ，１０６ｂ，１０６ｃ，１０６ｄ，１０６ｅを有しており、かかる円盤状台金部１０６ａ，１０６ｂ，１０６ｃ，１０６ｄ，１０６ｅの外周部にダイヤモンド砥粒刃１０８ａ，１０８ｂ，１０８ｃ，１０８ｄ，１０８ｅが設けられている。
　図９に示すような従来のマルチ外周刃ブレード１００では、スペーサ１０４を介して複数の単一外周刃ブレード１０２ａ，１０２ｂ，１０２ｃ，１０２ｄ，１０２ｅが組み付けられているため、例えば１００μｍオーダーのピッチや深さで溝加工を行うには、組み付け精度の問題が生じてしまう。そのため、本発明のマルチ外周刃ブレード２６では、スペーサを用いることなく、円盤状台金部２８を単一のものとし、その円盤状台金部２８の外周部３０にダイヤモンド砥粒層基部３２を設け、さらにダイヤモンド砥粒層基部３２の外周部にダイヤモンド砥粒刃部３６を設ける構成としている。
　かかるマルチ外周刃ブレード２６を用いて、図５に示すようにマルチ外周刃ブレード２６を回転させながら石英ガラス部材本体１４の表面を横断させれば、ダイヤモンド砥粒刃部３６によって、同時に複数の溝加工を行うことができる。
　そして、図６に矢印で示したように、かかる複数の溝同時加工を、位置をずらして繰り返すことで、図１に示す本発明の曝露面積増大石英ガラス部材となる。
　図７に、縦型熱処理炉の一例を示す。縦型熱処理炉４２は、石英で構成された反応室１２と、前記反応室１２に成膜処理ガスなどのガスを導入するガス導入管４４と、前記反応室１２を加熱するヒータ４６と、前記反応室１２内のガスを排気するためのガス排気管４８と、を有している。また、反応室１２内にはウェーハボート５０が搬入されている。かかるウェーハボート５０には、複数の半導体基板Ｗ（例えばシリコンウェーハ）が載置されている。
　そして、ウェーハボート５０の上端及び下端の載置部には、本発明の曝露面積増大石英ガラス部材１０が載置されている。この状態でガス導入管４４から成膜処理ガスを反応室１２内に導入し、半導体基板ＷへＣＶＤなどの成膜処理を行う。成膜処理が行われる半導体基板Ｗは、既に処理によって表面に凹凸が形成されており、曝露面積増大石英ガラス部材１０は成膜処理ガスに対する曝露面積が増大されているため、半導体基板Ｗへの成膜が均一となる。
　以下に本発明について実施例によってさらに具体的に説明するが、本発明がこれらの実施例によって限定されるものでないことは言うまでもない。
（実施例１～１０）
　単一の円盤状台金部と、円盤状台金部の外周部に形成されたダイヤモンド砥粒層部と、ダイヤモンド砥粒層部基部から、複数の刃が突出して一体的に設けられてなるメタルボンドによるダイヤモンド砥粒刃部と、を有する本発明のマルチ外周刃ブレードを準備した。これらのマルチ外周刃ブレードにより、複数の凹凸部を形成してなる本発明の曝露面積増大石英ガラス部材を製作した。実施例１～１０のマルチ外周刃ブレード及び曝露面積増大石英ガラス部材の詳細を表１に示す。
Figure JPOXMLDOC01-appb-T000001
　表１において、形状Ｙは、部材仕様：凹凸加工片面のみ表面全面、９０°クロス、ピッチ０．５ｍｍ、石英ガラス部材本体の外径（ＯＤ）３４０ｍｍ×内径（ＩＤ）３０２ｍｍ×厚さｔ０．８ｍｍ（円輪板状）であり、形状Ｘは、部材仕様：凹凸加工片面のみ表面全面、平行、ピッチ０．５ｍｍ、石英ガラス部材本体の外径（ＯＤ）３００ｍｍ×厚さｔ０．８ｍｍ（円板状）である。また、ＢＷ　ＭＡＸ：溝幅のバラツキの最大％（絶対値）、ＢＤ　ＭＡＸ：溝深さのバラツキの最大％（絶対値）、Ｄ：刃厚、Ｌ：刃長、Ｔ：基部厚みである。
　表１に示した如く、本発明のマルチ外周刃ブレードを用いることにより、溝形状の複数の凹凸部が形成され、且つ当該溝の溝幅と溝深さのバラツキの範囲が、２０％以内である曝露面積増大石英ガラス部材が得られた。
　また、実施例１，２及び６～８が溝幅のバラツキが１０％未満であり、さらに望ましい結果であった。
（実験例１～５）
　図９に示した、スペーサを介して複数の単一ブレードを組み付けた従来のマルチ外周刃ブレードを準備した。これらのマルチ外周刃ブレードを利用して、実施例１～１０と同様な形状Ｙ、Ｘの部材を製作した。実験例１～５のマルチ外周刃ブレード及び曝露面積増大石英ガラス部材の詳細を表２に示す。表２において、Ｓはスペーサとブレードを組み付けた後の全幅とした。
Figure JPOXMLDOC01-appb-T000002
　表２に示した如く、実験例１～５のいずれも実施例１～１０に比較して、溝幅と溝深さのばらつきが大きくなっており、実用に適さないものであった。
（実施例１１）
　実施例２と同様の方法により、円輪板状の曝露面積増大石英ガラス部材を準備し、図８に示した成膜処理装置を用いて窒化膜の成膜試験を行い、曝露面積増大石英ガラス部材への処理ガス吸着効果の検証を行った。図８に示した如く、サセプター５１上に円輪板状の曝露面積増大石英ガラス部材１０を載置せしめ、前記円輪板状の曝露面積増大石英ガラス部材１０の中空部５２に成膜被処理物である半導体基板Ｗを配置し成膜試験を行った。また、参考例１として、石英ガラス部材を配置せず半導体基板Ｗのみをサセプター５１上に載置し同様の実験を行った。
　成膜後の基板表面の膜の中央と外周部の相対的な膜厚比を、中央を１として確認した。結果を表３に示す。
（実施例１２）
　実験例３と同様の方法により得た円輪板状の曝露面積増大石英ガラス部材を用いた以外は実施例１１と同様の方法により実験を行った。結果を表３に示す。
（比較例１）
　溝の無い円輪板状の石英ガラス部材を用いた以外は実施例１１と同様の方法により実験を行った。結果を表３に示す。
Figure JPOXMLDOC01-appb-T000003
　表３に示した如く、比較例１に対して、実施例１１及び１２は曝露面積の増大による膜厚の外周厚膜化の抑制効果が大きいことがわかる。また、溝深さの溝幅に対する比が５倍、即ち、望ましい１０倍未満である実施例１１に比較して、１０倍以上の実施例１２は溝深さが深く、より多く面積は増大しているにもかかわらず、外周の厚膜化の抑制効果が少なくなり、吸着効果の効率に差があることがわかった。
（実施例１３～１５）
　曝露面積増大石英ガラス部材の溝のバラツキと吸着量に関して、吸着量のバラツキを、処理ガスに見立てて、純水の表面への付着残留重量の差異により検証した。評価は下記工程１）～５）にて行った。
１）水槽に所定の純水を満たし、重量を計測する。
２）石英ガラス部材（形状Ｙ、Ｘ）を純水の入った水槽に浸漬し、水中で１０分保持する。
３）次いで製品を水面から持ち上げて、水槽上で水面から離して、６０秒間保持し、部材から離れる水滴を水槽に落とす。
４）前記３）の処理後の部材を抜いた後の水槽の残留純水を含む重量を計測する。
５）前記１）の重量と４）の重量の差を、石英ガラス部材への純水の吸着重量とする。
　これを各石英ガラス部材について、１０回繰り返し、吸着重量のＭＡＸ－ＭＩＮ、及び平均にて検証した。
　各石英ガラス部材は、それぞれ、実施例１３：実施例２、実施例１４：実施例６、実施例１５：実施例９と同様の方法により得た曝露面積増大石英ガラス部材を用いた。結果を表４に示す。
（比較例２）
　比較例１と同様の溝の無い円輪板状の石英ガラス部材を用いた以外は実施例１３～１５と同様の方法により実験を行った。結果を表４に示す。
（実験例６及び７）
　石英ガラス部材を変更した以外は実施例１３～１５と同様の方法により実験を行った。実験例６及び７はそれぞれ、実験例４及び５と同様の方法により得た曝露面積増大石英ガラス部材を用いた。結果を表４に示す。
Figure JPOXMLDOC01-appb-T000004
　表４に示した如く、溝のバラツキが小さい曝露面積増大石英ガラス部材を用いた実施例１３～１５では、吸着量のバラツキも極めて小さいものであった。また、比較例２と実施例１３の純水の吸着量は、比較例１と実施例１１の外周部膜厚化抑制効果と良く一致し、吸着量が大きいほど膜厚化の抑制効果が大きいことがわかる。さらに、実施例１４，１５と実験例６，７から、溝の溝幅と溝深さの精度のばらつきが大きいと、吸着量も大幅にばらつくことがわかる。このことから、溝の溝幅、溝深さによる増大曝露面積を制御することにより、吸着量が一定になることが検証できる。
　１０，１０Ａ～１０Ｄ：曝露面積増大石英ガラス部材、１２：反応室、１４：石英ガラス部材本体、１６：凹凸部、１８：溝、２０：溝加工後の表面、２２：溝加工前の表面、２４ａ，２４ｂ：内側面、２６：本発明のマルチ外周刃ブレード、２８：円盤状台金部、３０：外周部、３２：ダイヤモンド砥粒層基部、３４：刃、３６：ダイヤモンド砥粒刃部、３８：挿通孔、４０：円弧状の窪み、４２：縦型熱処理炉、４４：ガス導入管、４６：ヒータ、４８：ガス排気管、５０：ウェーハボート、５１：サセプター、５２：中空部、１００：従来のマルチ外周刃ブレード、１０２ａ，１０２ｂ，１０２ｃ，１０２ｄ，１０２ｅ：単一外周刃ブレード、１０４：スペーサ、１０６ａ，１０６ｂ，１０６ｃ，１０６ｄ，１０６ｅ：円盤状台金部、１０８ａ，１０８ｂ，１０８ｃ，１０８ｄ，１０８ｅ：ダイヤモンド砥粒刃、Ｄ：刃厚、Ｌ：刃長、Ｔ：ダイヤモンド砥粒層基部の厚さ、Ｗ：半導体基板。

Claims (8)

  1. 　半導体基板の成膜処理において、成膜処理される前記半導体基板と共に反応室内に載置され、成膜処理ガスに曝露される成膜処理ガス曝露用の石英ガラス部材であり、
    　石英ガラス部材本体と、
    　前記石英ガラス部材本体の表面に形成された複数の凹凸部と、
    を有し、
    　成膜処理ガスへの曝露面積が制御されて増大されてなる曝露面積増大石英ガラス部材。
  2. 　前記制御されて増大される複数の凹凸部が溝形状であり、当該溝の溝幅と溝深さのバラツキの範囲が、各±２０％以内である請求項１記載の曝露面積増大石英ガラス部材。
  3. 　請求項１又は２記載の曝露面積増大石英ガラス部材の製造方法であり、マルチ外周刃ブレードを用いて、前記石英ガラス部材本体の表面に同時に複数の溝加工を行うことにより、複数の凹凸部を形成してなる曝露面積増大石英ガラス部材の製造方法。
  4. 　前記溝加工により得られた曝露面積増大石英ガラス部材の溝加工が行われた片面の表面積が、前記溝加工が行われる前の前記曝露面積増大石英ガラス部材の前記片面の表面積と比べて３倍以上である請求項３記載の曝露面積増大石英ガラス部材の製造方法。
  5. 　請求項３又は４記載の曝露面積増大石英ガラス部材の製造方法における溝加工を行うためのマルチ外周刃ブレードであり、
    　単一の円盤状台金部と、
    　前記円盤状台金部の外周部に形成されたダイヤモンド砥粒層基部と、
    　前記ダイヤモンド砥粒層基部から複数の刃が突出して一体的に設けられてなるダイヤモンド砥粒刃部と、
    を有する、マルチ外周刃ブレード。
  6. 　前記ダイヤモンド砥粒刃部の各刃の刃厚と刃長の比が１：５以上である請求項５記載のマルチ外周刃ブレード。
  7. 　前記ダイヤモンド砥粒層基部が、前記ダイヤモンド砥粒刃部の各刃の刃長の２倍以上の厚さを有する請求項５又は６記載のマルチ外周刃ブレード。
  8. 　前記複数の刃と刃の間の前記ダイヤモンド砥粒層基部の表面に円弧状の窪みが形成されてなる請求項５～７いずれか１項記載のマルチ外周刃ブレード。
PCT/JP2017/021265 2016-06-14 2017-06-08 曝露面積増大石英ガラス部材及びその製造方法並びにマルチ外周刃ブレード WO2017217309A1 (ja)

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US16/310,046 US20190321932A1 (en) 2016-06-14 2017-06-08 Quartz glass member with increased exposed area, method for manufacturing same, and blade with multiple peripheral cutting edges
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EP17813207.2A EP3471131A4 (en) 2016-06-14 2017-06-08 QUARTZ GLASS ELEMENT WITH INCREASED EXPOSED SURFACE, METHOD FOR THE PRODUCTION THEREOF AND BLADE WITH SEVERAL CIRCULAR CUTTING EDGES
CN201780036879.7A CN109314056B (zh) 2016-06-14 2017-06-08 暴露面积增大石英玻璃构件及其制造方法以及多重外周刃刀片
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EP3471131A4 (en) 2020-03-18
CN109314056A (zh) 2019-02-05
TWI735599B (zh) 2021-08-11
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US20190321932A1 (en) 2019-10-24

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