JP6002101B2 - サセプタ - Google Patents
サセプタ Download PDFInfo
- Publication number
- JP6002101B2 JP6002101B2 JP2013177762A JP2013177762A JP6002101B2 JP 6002101 B2 JP6002101 B2 JP 6002101B2 JP 2013177762 A JP2013177762 A JP 2013177762A JP 2013177762 A JP2013177762 A JP 2013177762A JP 6002101 B2 JP6002101 B2 JP 6002101B2
- Authority
- JP
- Japan
- Prior art keywords
- bearing
- spindle
- susceptor
- gap
- shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Description
実施形態に係るサセプタは、ウェハが載置される上面と、前記上面の反対側に設けられる下面とを有しており、鉛直方向に沿って延びるスピンドルを中心として回転するように構成される。前記下面には、前記スピンドルを受け入れる凹部である軸受けが設けられる。前記軸受けは、前記下面から前記上面に向けて先細りのテーパ形状を有する。前記軸受けの側壁には、前記鉛直方向に対して垂直な水平方向において、前記軸受けと前記スピンドルとの嵌合面よりも前記軸受けの外側に空隙が設けられている。
(サセプタの構成)
以下において、第1実施形態に係るサセプタについて説明する。図1及び図2は、第1実施形態に係るサセプタ10を示す図である。図1は、サセプタ10の主面(上面)を示す図である。図2は、サセプタ10の断面(A−A断面)の一部を模式的に示す図である。
第1実施形態では、軸受け12は、下面10Bから上面10Aに向けて先細りのテーパ形状を有する。従って、サセプタ10の軸受け12とスピンドル20との嵌合力の低下を抑制することができる。一方で、軸受け12の側壁12Aには、水平方向において軸受け12とスピンドル20との嵌合面12Xよりも軸受け12の外側に張り出す空隙12Bが設けられている。従って、軸受け12とスピンドル20との接触面積が小さくなり、サセプタ10からスピンドル20への熱の伝達が抑制され、軸受け12の近傍におけるサセプタ10の温度低下を抑制することができる。
以下において、第1実施形態の変更例1について説明する。以下においては、第1実施形態に対する相違点について主として説明する。
以下において、第1実施形態の変更例2について説明する。以下においては、第1実施形態に対する相違点について主として説明する。
以下において、第1実施形態の変更例3について説明する。以下においては、第1実施形態に対する相違点について主として説明する。
本発明は上述した実施形態によって説明したが、この開示の一部をなす論述及び図面は、この発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
Claims (4)
- ウェハが載置される上面と、前記上面の反対側に設けられる下面とを有しており、鉛直方向に沿って延びるスピンドルを中心として回転するように構成されたサセプタであって、
前記下面には、前記スピンドルを受け入れる凹部である軸受けが設けられており、
前記軸受けは、前記下面から前記上面に向けて先細りのテーパ形状を有しており、
前記軸受けの側壁には、前記鉛直方向に対して垂直な水平方向において、前記軸受けと前記スピンドルとの嵌合面よりも前記軸受けの外側に空隙が設けられており、
前記軸受けと前記スピンドルとの前記嵌合面は、前記スピンドルの側面のうち、前記軸受け内に挿入される部分の面積に対して80%以上であることを特徴とするサセプタ。 - 前記空隙は、前記水平方向において前記軸受けの最下端に設けられる開口部分よりも前記軸受けの外側に張り出していることを特徴とする請求項1に記載のサセプタ。
- 前記軸受けの底面は、下側に突出する凸形状を有することを特徴とする請求項1に記載のサセプタ。
- 前記軸受けの底面は、上側に窪む凹形状を有することを特徴とする請求項1に記載のサセプタ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013177762A JP6002101B2 (ja) | 2013-08-29 | 2013-08-29 | サセプタ |
PCT/JP2014/071377 WO2015029786A1 (ja) | 2013-08-29 | 2014-08-13 | サセプタ |
US14/914,728 US10460965B2 (en) | 2013-08-29 | 2014-08-13 | Susceptor |
CN201480047846.9A CN105493261B (zh) | 2013-08-29 | 2014-08-13 | 承载器 |
TW103129446A TWI576955B (zh) | 2013-08-29 | 2014-08-27 | Crystal seat |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013177762A JP6002101B2 (ja) | 2013-08-29 | 2013-08-29 | サセプタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015046533A JP2015046533A (ja) | 2015-03-12 |
JP6002101B2 true JP6002101B2 (ja) | 2016-10-05 |
Family
ID=52586355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013177762A Active JP6002101B2 (ja) | 2013-08-29 | 2013-08-29 | サセプタ |
Country Status (5)
Country | Link |
---|---|
US (1) | US10460965B2 (ja) |
JP (1) | JP6002101B2 (ja) |
CN (1) | CN105493261B (ja) |
TW (1) | TWI576955B (ja) |
WO (1) | WO2015029786A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105493260B (zh) | 2013-08-29 | 2018-07-13 | 株式会社普利司通 | 承载器 |
JP7002449B2 (ja) * | 2016-06-14 | 2022-02-04 | 信越石英株式会社 | 曝露面積増大石英ガラス部材及びその製造方法並びにマルチ外周刃ブレード |
TWM630893U (zh) * | 2020-09-03 | 2022-08-21 | 美商威科精密儀器公司 | 用於磊晶沉積之基板反應器及用於化學氣相沉積反應器之基板載體 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2416886A (en) * | 1943-09-24 | 1947-03-04 | Gen Motors Corp | Spindle mounting and driving unit |
JPH0620965A (ja) | 1992-07-02 | 1994-01-28 | Hitachi Ltd | 真空中加熱用ホルダー及びcvd装置 |
US6053982A (en) | 1995-09-01 | 2000-04-25 | Asm America, Inc. | Wafer support system |
US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
US6547876B2 (en) | 2001-02-07 | 2003-04-15 | Emcore Corporation | Apparatus for growing epitaxial layers on wafers by chemical vapor deposition |
US6506252B2 (en) | 2001-02-07 | 2003-01-14 | Emcore Corporation | Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
US8021487B2 (en) | 2007-12-12 | 2011-09-20 | Veeco Instruments Inc. | Wafer carrier with hub |
US20110114022A1 (en) | 2007-12-12 | 2011-05-19 | Veeco Instruments Inc. | Wafer carrier with hub |
SG183432A1 (en) | 2010-02-24 | 2012-09-27 | Veeco Instr Inc | Processing methods and apparatus with temperature distribution control |
EP2543063B1 (en) * | 2010-03-03 | 2019-05-08 | Veeco Instruments Inc. | Wafer carrier with sloped edge |
US9190310B2 (en) | 2010-04-16 | 2015-11-17 | Lam Research Ag | Grounded chuck |
US9230846B2 (en) * | 2010-06-07 | 2016-01-05 | Veeco Instruments, Inc. | Multi-wafer rotating disc reactor with inertial planetary drive |
-
2013
- 2013-08-29 JP JP2013177762A patent/JP6002101B2/ja active Active
-
2014
- 2014-08-13 US US14/914,728 patent/US10460965B2/en active Active
- 2014-08-13 WO PCT/JP2014/071377 patent/WO2015029786A1/ja active Application Filing
- 2014-08-13 CN CN201480047846.9A patent/CN105493261B/zh active Active
- 2014-08-27 TW TW103129446A patent/TWI576955B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201508862A (zh) | 2015-03-01 |
US10460965B2 (en) | 2019-10-29 |
CN105493261B (zh) | 2018-04-13 |
WO2015029786A1 (ja) | 2015-03-05 |
JP2015046533A (ja) | 2015-03-12 |
CN105493261A (zh) | 2016-04-13 |
TWI576955B (zh) | 2017-04-01 |
US20160218024A1 (en) | 2016-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105493260B (zh) | 承载器 | |
JP6002101B2 (ja) | サセプタ | |
JP5403671B2 (ja) | 炭化珪素単結晶の製造装置 | |
JP6400273B2 (ja) | 静電チャック装置 | |
JP2016530705A5 (ja) | ||
JP2016532630A5 (ja) | ||
JP2009062573A (ja) | 遠心噴霧法に用いる回転ディスクとこれを用いた遠心噴霧法 | |
JP5098873B2 (ja) | 気相成長装置用のサセプタ及び気相成長装置 | |
JP6506056B2 (ja) | セラミック部材の製造方法 | |
US11053586B2 (en) | Coated flat component in a CVD reactor | |
JP5603990B2 (ja) | 炭化珪素単結晶の製造装置 | |
CN103540912B (zh) | Mocvd设备及该设备中的托盘支撑旋转系统 | |
CN104934345B (zh) | 一种等离子体装置 | |
TWI484591B (zh) | 最小重疊排除圓環 | |
JPWO2018207942A1 (ja) | サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 | |
WO2016002815A1 (ja) | セラミック部材の製造方法および支持具 | |
JP2015046536A (ja) | サセプタ | |
JP6219794B2 (ja) | サセプタ | |
JP2012017242A (ja) | 石英ガラスルツボ及びルツボ構造 | |
JP5835158B2 (ja) | 黒鉛ルツボ | |
JP2016162958A (ja) | サセプタ | |
CN207619525U (zh) | 一种用于化学气相沉积的晶片托架 | |
JP6215798B2 (ja) | サセプタ | |
JP3195389U (ja) | 鍛造用素材加熱用のセラミックチューブ | |
JP2011165697A (ja) | 気相成長装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160315 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160427 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160816 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160902 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6002101 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |