JP5403671B2 - 炭化珪素単結晶の製造装置 - Google Patents
炭化珪素単結晶の製造装置 Download PDFInfo
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- JP5403671B2 JP5403671B2 JP2009139253A JP2009139253A JP5403671B2 JP 5403671 B2 JP5403671 B2 JP 5403671B2 JP 2009139253 A JP2009139253 A JP 2009139253A JP 2009139253 A JP2009139253 A JP 2009139253A JP 5403671 B2 JP5403671 B2 JP 5403671B2
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- Prior art keywords
- seed crystal
- single crystal
- raw material
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- heat insulating
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- 239000013078 crystal Substances 0.000 title claims description 160
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 34
- 238000000859 sublimation Methods 0.000 claims description 61
- 230000008022 sublimation Effects 0.000 claims description 61
- 239000002994 raw material Substances 0.000 claims description 55
- 239000011810 insulating material Substances 0.000 claims description 46
- 230000002093 peripheral effect Effects 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
Description
まず、本発明の第1実施形態について説明する。図1は、本発明の第1実施形態による炭化珪素単結晶の製造装置の説明図である。
次いで、本発明の第2実施形態について説明するが、前述した第1実施形態と同一構造の部位には同一符号を付して説明を省略する。
次いで、本発明の第3実施形態について説明するが、前述した第1および第2実施形態と同一構造の部位には同一符号を付して説明を省略する。
本実施形態においては、坩堝本体5の上部が開口されているが、これに限られず、例えば、坩堝本体5の下部が開口されていてもよい。この場合、ガイド部材は、種結晶支持部の外周近傍から下部の反対側である上部に向けて筒状に延びる。
5 坩堝本体
7 種結晶支持部
9 蓋体
11,33,43 ガイド部材
21,23,25 断熱材
Claims (2)
- 昇華用原料を収容する坩堝本体と、
前記昇華用原料と対向する位置に種結晶を固定する種結晶支持部を設けた蓋体と、
前記種結晶支持部の外周近傍から前記昇華用原料に向けて筒状に延びるガイド部材と、
前記種結晶支持部の外周側において前記蓋体の内面に配設され、円盤形状を有すると共に、単結晶よりも熱伝導率が低く設定された断熱材と
を備え、
前記昇華用原料および種結晶を加熱して前記単結晶を成長させるときに、前記昇華用原料から前記種結晶に向かう熱の流れを前記断熱材によって前記種結晶に集約させるように構成したことを特徴とする炭化珪素単結晶の製造装置。 - 前記種結晶支持部は、前記蓋体の内面から前記坩堝本体の内側に突設していることを特徴とする請求項1に記載の炭化珪素単結晶の製造装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009139253A JP5403671B2 (ja) | 2009-06-10 | 2009-06-10 | 炭化珪素単結晶の製造装置 |
CN201080025247.9A CN102459718B (zh) | 2009-06-10 | 2010-04-23 | 碳化硅单晶的制造装置 |
US13/377,328 US20120132139A1 (en) | 2009-06-10 | 2010-04-23 | Apparatus of manufacturing silicon carbide single crystal |
EP10786007.4A EP2441861B1 (en) | 2009-06-10 | 2010-04-23 | Device for producing silicon carbide single crystals |
PCT/JP2010/057218 WO2010143476A1 (ja) | 2009-06-10 | 2010-04-23 | 炭化珪素単結晶の製造装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009139253A JP5403671B2 (ja) | 2009-06-10 | 2009-06-10 | 炭化珪素単結晶の製造装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013218179A Division JP5603990B2 (ja) | 2013-10-21 | 2013-10-21 | 炭化珪素単結晶の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010285309A JP2010285309A (ja) | 2010-12-24 |
JP5403671B2 true JP5403671B2 (ja) | 2014-01-29 |
Family
ID=43308736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009139253A Active JP5403671B2 (ja) | 2009-06-10 | 2009-06-10 | 炭化珪素単結晶の製造装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120132139A1 (ja) |
EP (1) | EP2441861B1 (ja) |
JP (1) | JP5403671B2 (ja) |
CN (1) | CN102459718B (ja) |
WO (1) | WO2010143476A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130014273A (ko) * | 2011-07-29 | 2013-02-07 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
JP5699963B2 (ja) * | 2012-02-16 | 2015-04-15 | 三菱電機株式会社 | 単結晶の製造方法および製造装置 |
JP5582585B2 (ja) * | 2012-04-25 | 2014-09-03 | 國防部軍備局中山科學研究院 | るつぼ |
US9797064B2 (en) * | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US20150132486A1 (en) * | 2013-11-12 | 2015-05-14 | Chung-Shan Institute of Science and Technology, Armaments Bureau, Ministry of National Defence | Vapor deposition apparatus and method using the same |
US20160002820A1 (en) * | 2014-07-04 | 2016-01-07 | Sumitomo Electric Industries, Ltd. | Crucible and method for producing single crystal |
JP6354399B2 (ja) * | 2014-07-04 | 2018-07-11 | 住友電気工業株式会社 | 坩堝および単結晶の製造方法 |
JP6394124B2 (ja) * | 2014-07-04 | 2018-09-26 | 住友電気工業株式会社 | 坩堝および単結晶の製造方法 |
CN106929919A (zh) * | 2015-12-29 | 2017-07-07 | 中国科学院上海硅酸盐研究所 | 一种碳化硅晶体生长用坩埚 |
JP6694807B2 (ja) * | 2016-12-26 | 2020-05-20 | 昭和電工株式会社 | 炭化珪素単結晶の製造方法 |
JP7076279B2 (ja) * | 2018-04-26 | 2022-05-27 | 昭和電工株式会社 | SiC単結晶成長装置およびSiC単結晶の成長方法 |
JP7242977B2 (ja) * | 2018-11-14 | 2023-03-22 | 株式会社レゾナック | SiC単結晶製造装置及びSiC単結晶の製造方法 |
US11326274B2 (en) * | 2019-06-26 | 2022-05-10 | Showa Denko K.K. | Single crystal growth crucible having a first housing and a second housing, and single crystal production device |
CN111349971B (zh) | 2020-03-30 | 2021-04-23 | 福建北电新材料科技有限公司 | 晶体原料盛载装置及晶体生长装置 |
CN113122924B (zh) * | 2021-04-23 | 2022-04-12 | 福建北电新材料科技有限公司 | 晶体生长组件、晶体生长装置和方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5683507A (en) * | 1995-09-05 | 1997-11-04 | Northrop Grumman Corporation | Apparatus for growing large silicon carbide single crystals |
US5985024A (en) * | 1997-12-11 | 1999-11-16 | Northrop Grumman Corporation | Method and apparatus for growing high purity single crystal silicon carbide |
JP4174847B2 (ja) * | 1998-03-26 | 2008-11-05 | 株式会社デンソー | 単結晶の製造方法 |
US6534026B2 (en) * | 2000-02-15 | 2003-03-18 | The Fox Group, Inc. | Low defect density silicon carbide |
JP3961750B2 (ja) | 2000-08-21 | 2007-08-22 | 独立行政法人産業技術総合研究所 | 単結晶の成長装置および成長方法 |
JP4903946B2 (ja) * | 2000-12-28 | 2012-03-28 | 株式会社ブリヂストン | 炭化ケイ素単結晶の製造方法及び製造装置 |
JP4102876B2 (ja) | 2003-01-27 | 2008-06-18 | 独立行政法人産業技術総合研究所 | 単結晶成長装置 |
US7217323B2 (en) * | 2003-04-04 | 2007-05-15 | Denso Corporation | Equipment and method for manufacturing silicon carbide single crystal |
JP3792699B2 (ja) * | 2004-02-12 | 2006-07-05 | 株式会社デンソー | SiC単結晶の製造方法およびSiC単結晶の製造装置 |
JP2007308355A (ja) | 2006-05-22 | 2007-11-29 | Bridgestone Corp | 炭化ケイ素単結晶の製造装置及びその製造方法 |
EP2126163A2 (en) * | 2007-01-16 | 2009-12-02 | II-VI Incorporated | Guided diameter sic sublimation growth with multi-layer growth guide |
JP2009091173A (ja) * | 2007-10-04 | 2009-04-30 | Denso Corp | 炭化珪素単結晶の製造装置 |
JP5143139B2 (ja) * | 2007-11-08 | 2013-02-13 | パナソニック株式会社 | 単結晶成長装置 |
JP2009139253A (ja) | 2007-12-07 | 2009-06-25 | Tokai Rika Co Ltd | ポジションセンサ |
-
2009
- 2009-06-10 JP JP2009139253A patent/JP5403671B2/ja active Active
-
2010
- 2010-04-23 CN CN201080025247.9A patent/CN102459718B/zh active Active
- 2010-04-23 US US13/377,328 patent/US20120132139A1/en not_active Abandoned
- 2010-04-23 EP EP10786007.4A patent/EP2441861B1/en active Active
- 2010-04-23 WO PCT/JP2010/057218 patent/WO2010143476A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN102459718B (zh) | 2014-10-08 |
JP2010285309A (ja) | 2010-12-24 |
US20120132139A1 (en) | 2012-05-31 |
EP2441861A4 (en) | 2013-04-03 |
EP2441861A1 (en) | 2012-04-18 |
CN102459718A (zh) | 2012-05-16 |
EP2441861B1 (en) | 2020-03-11 |
WO2010143476A1 (ja) | 2010-12-16 |
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