WO2015029786A1 - サセプタ - Google Patents
サセプタ Download PDFInfo
- Publication number
- WO2015029786A1 WO2015029786A1 PCT/JP2014/071377 JP2014071377W WO2015029786A1 WO 2015029786 A1 WO2015029786 A1 WO 2015029786A1 JP 2014071377 W JP2014071377 W JP 2014071377W WO 2015029786 A1 WO2015029786 A1 WO 2015029786A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bearing
- susceptor
- spindle
- gap
- shape
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Definitions
- the reactor that accommodates the susceptor is configured such that the reaction gas flows from the upper direction to the lower direction, and is configured to rotate the susceptor at a high speed around the rotation axis (spindle) along the vertical direction.
- a vertical reactor is known.
- the susceptor is provided with a bearing that receives the spindle, and the susceptor is fitted to the spindle by its own weight (for example, Patent Document 1).
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
実施形態に係るサセプタは、ウェハが載置される上面と、前記上面の反対側に設けられる下面とを有しており、鉛直方向に沿って延びるスピンドルを中心として回転するように構成される。前記下面には、前記スピンドルを受け入れる凹部である軸受けが設けられる。前記軸受けは、前記下面から前記上面に向けて先細り形状、すなわち、テーパ形状を有する。前記軸受けの側壁には、前記鉛直方向に対して垂直な水平方向において、前記軸受けと前記スピンドルとの嵌合面よりも前記軸受けの外側に空隙が設けられている。
(サセプタの構成)
以下において、第1実施形態に係るサセプタについて説明する。図1及び図2は、第1実施形態に係るサセプタ10を示す図である。図1は、サセプタ10の主面(上面)を示す図である。図2は、サセプタ10の断面(A-A断面)の一部を模式的に示す図である。
第1実施形態では、軸受け12は、下面10Bから上面10Aに向けて先細り形状、すなわちテーパ形状を有する。従って、サセプタ10の軸受け12とスピンドル20との嵌合力の低下を抑制することができる。一方で、軸受け12の側壁12Aには、水平方向において軸受け12とスピンドル20との嵌合面12Xよりも軸受け12の外側に張り出す空隙12Bが設けられている。従って、軸受け12とスピンドル20との接触面積が小さくなり、サセプタ10からスピンドル20への熱の伝達が抑制され、軸受け12の近傍におけるサセプタ10の温度低下を抑制することができる。
以下において、第1実施形態の変更例1について説明する。以下においては、第1実施形態に対する相違点について主として説明する。
以下において、第1実施形態の変更例2について説明する。以下においては、第1実施形態に対する相違点について主として説明する。
以下において、第1実施形態の変更例3について説明する。以下においては、第1実施形態に対する相違点について主として説明する。
本発明は上述した実施形態によって説明したが、この開示の一部をなす論述及び図面は、この発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
なお、本出願は、2013年8月29日に出願された日本出願の特願2013-177762号に基づく優先権を主張し、当該日本出願に記載された全ての記載内容を援用するものである。
Claims (9)
- ウェハが載置される上面と、前記上面の反対側に設けられる下面とを有しており、鉛直方向に沿って延びるスピンドルを中心として回転するように構成されたサセプタであって、
前記下面には、前記スピンドルを受け入れる凹部である軸受けが設けられており、
前記軸受けは、前記下面から前記上面に向かうにつれて先細りになる形状を有しており、
前記軸受けの側壁には、前記鉛直方向に対して垂直な水平方向において、前記軸受けと前記スピンドルとの嵌合面よりも前記軸受けの外側に空隙が設けられていることを特徴とするサセプタ。 - 前記空隙は、前記水平方向において前記軸受けの最下端に設けられる開口部分よりも前記軸受けの外側に張り出していることを特徴とする請求項1に記載のサセプタ。
- 前記軸受けの底面は、下側に突出する凸形状を有することを特徴とする請求項1または2に記載のサセプタ。
- 前記軸受けの底面は、上側に窪む凹形状を有することを特徴とする請求項1~3のいずれかに記載のサセプタ。
- 前記空隙は、前記軸受けの最上端に設けられることを特徴とする、請求項1~4のいずれかに記載のサセプタ。
- 前記空隙は、水平方向において全方位に張り出していることを特徴とする、請求項1~5のいずれかに記載のサセプタ。
- 前記空隙は、前記スピンドルを中心とする円環形状を有することを特徴とする、請求項1~6のいずれかに記載のサセプタ。
- 前記軸受けは、前記先細りとなる形状として、裁頭円錐形状を有していることを特徴とする、請求項1~7のいずれかに記載のサセプタ。
- 前記軸受けと前記スピンドルとの嵌合面は、前記スピンドルの側面のうち、前記軸受け内に挿入される部分の面積に対して、80%以上であることを特徴とする、請求項1~8のいずれかに記載のサセプタ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480047846.9A CN105493261B (zh) | 2013-08-29 | 2014-08-13 | 承载器 |
US14/914,728 US10460965B2 (en) | 2013-08-29 | 2014-08-13 | Susceptor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013177762A JP6002101B2 (ja) | 2013-08-29 | 2013-08-29 | サセプタ |
JP2013-177762 | 2013-08-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015029786A1 true WO2015029786A1 (ja) | 2015-03-05 |
Family
ID=52586355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/071377 WO2015029786A1 (ja) | 2013-08-29 | 2014-08-13 | サセプタ |
Country Status (5)
Country | Link |
---|---|
US (1) | US10460965B2 (ja) |
JP (1) | JP6002101B2 (ja) |
CN (1) | CN105493261B (ja) |
TW (1) | TWI576955B (ja) |
WO (1) | WO2015029786A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI533401B (zh) | 2013-08-29 | 2016-05-11 | Bridgestone Corp | 晶座 |
US20190321932A1 (en) * | 2016-06-14 | 2019-10-24 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass member with increased exposed area, method for manufacturing same, and blade with multiple peripheral cutting edges |
TWM630893U (zh) * | 2020-09-03 | 2022-08-21 | 美商威科精密儀器公司 | 用於磊晶沉積之基板反應器及用於化學氣相沉積反應器之基板載體 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004525056A (ja) * | 2001-02-07 | 2004-08-19 | エムコア・コーポレイション | 化学蒸着によりウェハ上にエピタキシャル層を成長させる装置および方法 |
JP2011507266A (ja) * | 2007-12-12 | 2011-03-03 | ビーコ・インストゥルメンツ・インコーポレイテッド | ハブを有するウエハキャリア |
JP2013526018A (ja) * | 2010-04-16 | 2013-06-20 | ラム・リサーチ・アーゲー | 接地されたチャック |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2416886A (en) * | 1943-09-24 | 1947-03-04 | Gen Motors Corp | Spindle mounting and driving unit |
JPH0620965A (ja) | 1992-07-02 | 1994-01-28 | Hitachi Ltd | 真空中加熱用ホルダー及びcvd装置 |
AU6962196A (en) * | 1995-09-01 | 1997-03-27 | Advanced Semiconductor Materials America, Inc. | Wafer support system |
US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
US6547876B2 (en) | 2001-02-07 | 2003-04-15 | Emcore Corporation | Apparatus for growing epitaxial layers on wafers by chemical vapor deposition |
US20110114022A1 (en) | 2007-12-12 | 2011-05-19 | Veeco Instruments Inc. | Wafer carrier with hub |
EP2539920A1 (en) | 2010-02-24 | 2013-01-02 | Veeco Instruments Inc. | Processing methods and apparatus with temperature distribution control |
US8888919B2 (en) * | 2010-03-03 | 2014-11-18 | Veeco Instruments Inc. | Wafer carrier with sloped edge |
US9230846B2 (en) | 2010-06-07 | 2016-01-05 | Veeco Instruments, Inc. | Multi-wafer rotating disc reactor with inertial planetary drive |
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2013
- 2013-08-29 JP JP2013177762A patent/JP6002101B2/ja active Active
-
2014
- 2014-08-13 WO PCT/JP2014/071377 patent/WO2015029786A1/ja active Application Filing
- 2014-08-13 US US14/914,728 patent/US10460965B2/en active Active
- 2014-08-13 CN CN201480047846.9A patent/CN105493261B/zh active Active
- 2014-08-27 TW TW103129446A patent/TWI576955B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004525056A (ja) * | 2001-02-07 | 2004-08-19 | エムコア・コーポレイション | 化学蒸着によりウェハ上にエピタキシャル層を成長させる装置および方法 |
JP2011507266A (ja) * | 2007-12-12 | 2011-03-03 | ビーコ・インストゥルメンツ・インコーポレイテッド | ハブを有するウエハキャリア |
JP2013526018A (ja) * | 2010-04-16 | 2013-06-20 | ラム・リサーチ・アーゲー | 接地されたチャック |
Also Published As
Publication number | Publication date |
---|---|
TW201508862A (zh) | 2015-03-01 |
JP2015046533A (ja) | 2015-03-12 |
US10460965B2 (en) | 2019-10-29 |
CN105493261A (zh) | 2016-04-13 |
CN105493261B (zh) | 2018-04-13 |
US20160218024A1 (en) | 2016-07-28 |
TWI576955B (zh) | 2017-04-01 |
JP6002101B2 (ja) | 2016-10-05 |
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