CN105493261A - 承载器 - Google Patents

承载器 Download PDF

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CN105493261A
CN105493261A CN201480047846.9A CN201480047846A CN105493261A CN 105493261 A CN105493261 A CN 105493261A CN 201480047846 A CN201480047846 A CN 201480047846A CN 105493261 A CN105493261 A CN 105493261A
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bearing portion
main shaft
carrier
space
carrier according
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CN105493261B (zh
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小林文弥
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Maruwa Co Ltd
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Bridgestone Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

作为用于接收主轴(20)的凹部的轴承(12)设置在承载器(10)的下表面(10B)。轴承(12)具有从下表面(10B)朝向上表面(10A)渐缩的锥形形状。在轴承(12)的侧壁(12A)形成在水平方向上比轴承(12)与主轴(20)之间的嵌合面(12X)靠轴承(12)的外侧的空隙(12B)。结果，能够抑制承载器的轴承与主轴之间的嵌合力的降低，并且还能够抑制承载器的温度在轴承附近降低。

Description

承载器
技术领域
本发明涉及设置有具有凹部的基材的承载器(susceptor)。
背景技术
传统地，在执行将由碳化硅、砷化镓、复合金属氧化物(例如，YBa2Cu3O7)等制成的膜形成至晶圆的表面的处理时，使用用于保持晶圆的晶圆保持件(以下，称为“承载器”)。
这里，作为收纳承载器的反应器，已知如下立式反应器(vertical-typereactor)：该立式反应器被构造使得反应气体从上向下流动，并且承载器以沿着竖直方向延伸的转动轴(主轴)为中心高速转动。承载器设置有用以接收主轴的轴承部(bearing)，从而使承载器由于其自重而嵌合于主轴(例如，专利文献1)。
现有技术文献
专利文献
专利文献1：日本特表2004-525056号公报
发明内容
发明要解决的问题
在上述构造中，承载器高速转动，因此承载器的轴承部与主轴之间的嵌合力是重要的。另一方面，在从承载器向主轴的热传递方面，还必须考虑承载器的温度在轴承部附近的降低。
为了克服上述问题而作出本发明，本发明的目的在于提供一种如下承载器：其能够在抑制该承载器的轴承部与主轴之间的嵌合力降低的同时，抑制该承载器的温度在轴承部附近的降低。
用于解决问题的方案
根据第一方面的承载器，其具有用于载置晶圆的上表面以及设在所述上表面的相反侧的下表面，所述承载器被构造成以沿竖直方向延伸的主轴为中心地转动，其中由用于接收所述主轴的凹部形成的轴承部设在所述下表面。所述轴承部具有从所述下表面朝向所述上表面顶端变细的形状。在所述轴承部的侧壁形成如下空隙：该空隙在与所述竖直方向垂直的水平方向上从所述轴承部与所述主轴之间的嵌合面朝向所述轴承部的外侧伸出。
所述空隙可以在所述水平方向上伸出到比设在所述轴承部的最下端的开口部分靠所述轴承部的外侧的位置。
所述轴承部的与上端面对应的底表面可以具有向下突出的凸形状。
所述轴承部的与上端面对应的底表面可以具有向上凹陷的凹形状。
发明的效果
本发明提供一种如下承载器：其能够在抑制该承载器的轴承部与主轴之间的嵌合力降低的同时，抑制该承载器的温度在轴承部附近的降低。
附图说明
图1是示出根据第一实施方式的承载器10的图。
图2是示出根据第一实施方式的承载器10的图。
图3是示出根据变更例1的承载器10的图。
图4是示出根据变更例2的承载器10的图。
图5是示出根据变更例3的承载器10的图。
图6是示出根据变更例3的承载器10的图。
具体实施方式
以下将参照附图说明根据本发明实施方式的承载器。注意，在以下附图说明中，用相同或相似的附图标记表示相同或相似的部分。
注意，附图是示意性的，并且尺寸或比例与实际值不同。因此，应当考虑以下说明来确定具体尺寸等。无需赘述，在附图中，相互间的尺寸的关系或比例可能不同。
[实施方式的概述]
根据实施方式的承载器具有具有用于载置晶圆的上表面以及配置在所述上表面的相反侧的下表面，所述承载器被构造成以沿竖直方向延伸的主轴为中心地转动。作为用于接收所述主轴的凹部的轴承部形成在所述下表面。所述轴承部具有从所述下表面朝向所述上表面顶端变细的形状、即锥形形状。在所述轴承部的侧壁形成如下空隙：该空隙在与所述竖直方向垂直的水平方向上从所述轴承部与所述主轴之间的嵌合面朝向所述轴承部的外侧伸出。
在本实施方式中，轴承部具有从下表面朝向上表面顶端变细的形状、即锥形形状。因此，能够抑制承载器的轴承部与主轴之间的嵌合力的降低。另一方面，在轴承部的侧壁上，形成了在水平方向上比轴承部与主轴之间的嵌合面靠轴承部外侧的空隙。因此，减小了轴承部与主轴之间的接触面积，并因此能够抑制从承载器向主轴的热传递，由此能够抑制承载器的温度在轴承部附近降低。
[第一实施方式]
(承载器的构造)
以下，说明根据第一实施方式的承载器。图1和图2是示出根据第一实施方式的承载器10的图。图1是示出承载器10的主表面(上表面)的图。图2是示意性地示出承载器10的截面(沿着线A-A截取的截面)的一部分的图。
如图1和图2所示，承载器10具有用于载置晶圆的上表面10A以及配置在上表面10A的相反侧的下表面10B。承载器10被构造成以沿竖直方向延伸的主轴20(转动轴)为中心地转动。承载器10被构造成从下表面10B侧由加热器30加热。
承载器10由碳基材料制成。承载器10可以不被通过涂覆SiC膜等覆盖。承载器10可以由石英玻璃制成。承载器10可以具有例如圆盘形状。
分别用于保持晶圆的凹部11形成在上表面10A。由于晶圆的运动受到凹部11的侧壁的抑制，所以即使在承载器10转动时，晶圆也被保持在上表面10A。
作为用于接收主轴20的凹部的轴承部12形成在下表面10B。轴承部12具有从下表面10B向上表面10A顶端变细的形状、即锥形形状。换言之，轴承部12具有与主轴20的顶端部分对应的锥形形状。
主轴20由热传导率高于例如形成承载器10用的材料的金属制成。主轴20具有朝向顶端变细的形状、即锥形形状。例如，主轴20具有圆柱形状，主轴20的顶端部分具有渐缩的圆锥台形、即截头圆锥形状。
如上所述，轴承部12具有与主轴20的顶端对应的形状。通过将主轴20插入轴承部12，主轴20嵌合于轴承部12。承载器10通过其自重嵌合于主轴20。理想地，优选的是，轴承部12和主轴20的顶端彼此具有完全对应的形状。然而，从轴承部12的加工精度等问题的观点出发，可能存在如下情况：难以对轴承部12和主轴20实施加工，使得轴承部12的形状与主轴20的顶端部分的形状彼此完全对应。在该情况下，优选使轴承部12的尺寸与主轴20的顶端部分的尺寸在轴承部12的下端侧彼此完全一致(大端嵌合(largeendfitting))。
尽管不特别限制加热器30，但是例如，加热器30由具有涡旋形状图案的电加热线形成。
在第一实施方式中，在轴承部12的侧壁12A形成空隙12B，使得空隙12B在与竖直方向垂直的水平方向上从轴承部12与主轴20之间的嵌合面12X朝向轴承部12的外侧伸出。在本实施方式中，嵌合面12X表示轴承部12的侧壁12A的与主轴20接触的面。从承载器12(轴承部12)与主轴20之间的嵌合力的观点出发，优选的是，轴承部12的侧壁12A(嵌合面12X)为平坦面。
优选的是，空隙12B在水平方向上伸出到比设在轴承部12的最下端的开口部分12Y靠轴承部12的外侧的位置。此外，优选的是，空隙12B形成在轴承部12的最上端(底表面侧)。优选的是，空隙12B沿水平方向全方位地伸出。即，空隙12B具有以主轴20为中心的圆环形状。
(作用及效果)
在第一实施方式中，轴承部12具有从下表面10B向上表面10A顶端变细的形状、即锥形形状。因此，能够抑制承载器10的轴承部12与主轴20之间的嵌合力的降低。另一方面，在轴承部12的侧壁12A形成空隙12B，使得空隙12B沿水平方向从轴承部12与主轴20之间的嵌合面12X朝向轴承部12的外侧伸出。因此，减小了轴承部12与主轴20之间的接触面积，并且能够抑制从承载器10向主轴20的热传递，由此能够抑制承载器10的温度在轴承部12附近降低。
[变更例1]
以下说明第一实施方式的变更例1。以下主要说明变更例1与第一实施方式的不同点。
尽管在第一实施方式中未作特别说明，但是在变更例1中，如图3所示，轴承部12的底表面12C具有向下突出的凸形状。利用该构造，即使在主轴20的上端面到达底表面12C时，也会减小主轴20的上端面与底表面12C之间的接触面积，并因此能够抑制从承载器10向主轴20的热传递。由于主轴20的上端面到达底表面12C，所以承载器10的转动是稳定的。
[变更例2]
以下说明第一实施方式的变更例2。以下主要说明变更例2与第一实施方式的不同点。
尽管在第一实施方式中未作特别说明，但是在变更例2中，如图4所示，轴承部12的底表面(上端面)12C具有向上凹陷的凹形状。利用该构造，即使在主轴20的上端面到达底表面12C时，也会减小主轴20的上端面与底表面12C之间的接触面积，并因此能够抑制从承载器10向主轴20的热传递。由于主轴20的上端面到达底表面12C，所以承载器10的转动是稳定的。
[变更例3]
以下说明第一实施方式的变更例3。以下主要说明变更例3与第一实施方式的不同点。
在第一实施方式中，轴承部12的侧壁12A为平坦面。然而，实施方式不限于该构造。更具体地，如图5所示，轴承部12的侧壁12A可以具有台阶形状。可选地，如图6所示，轴承部12的侧壁12A可以具有朝向轴承部12的内侧突出的凸形状。
[其它实施方式]
尽管已经结合上述实施方式说明了本发明，但是形成本公开的一部分的说明书和附图不应当被理解成对本发明的限制。根据本公开，用于实施本发明的各种替代实施方式、实施例和技术对本领域技术人员来说是显而易见的。
在实施方式中，空隙12B形成在轴承部12的最上端(底表面侧、即上端面侧)。然而，实施方式不限于该构造。空隙12B可以形成在轴承部12的最下端与轴承部12的最上端之间的中间部分。
在实施方式中，空隙12B沿水平方向全方位地伸出。然而，实施方式不限于该构造。空隙12B可以沿水平方向仅在某些方位伸出。
尽管在实施方式中未作特别说明，但是轴承部12与主轴20之间的嵌合面12X占主轴20的侧表面的插入轴承部12内的部分的面积的80％以上是足够的。换言之，空隙12B具有满足该条件的尺寸是足够的。
在实施方式中，主轴20的顶端部分具有锥形的圆锥台形、即截头圆锥形状，轴承部12具有与主轴20的顶端部分对应的形状。然而，主轴20的顶端部分可以具有锥形的三角锥台形、即截头三角锥形状，或者锥形的四角锥台形、即截头四角锥形状。在该情况下，无需赘述，轴承部12具有与主轴20的顶端部分对应的形状。
应当注意，本申请要求2013年8月29日递交的日本专利申请2013-177762号的优先权，并通过引用将其全部内容并入本说明书。
附图标记说明
10承载器
11凹部
12轴承部
12A侧壁
12B空隙
12C底表面(上端面)
12X嵌合面
12Y开口部分
20主轴
30加热器

Claims (9)

1.一种承载器，其具有用于载置晶圆的上表面以及设在所述上表面的相反侧的下表面，所述承载器被构造成以沿竖直方向延伸的主轴为中心地转动，其中
由用于接收所述主轴的凹部形成的轴承部设在所述下表面，
所述轴承部具有从所述下表面朝向所述上表面顶端变细的形状，
在所述轴承部的侧壁形成如下空隙：该空隙在与所述竖直方向垂直的水平方向上从所述轴承部与所述主轴之间的嵌合面朝向所述轴承部的外侧伸出。
2.根据权利要求1所述的承载器，其特征在于，所述空隙在所述水平方向上伸出到比设在所述轴承部的最下端的开口部分靠所述轴承部的外侧的位置。
3.根据权利要求1或2所述的承载器，其特征在于，所述轴承部的底表面具有向下突出的凸形状。
4.根据权利要求1至3中任一项所述的承载器，其特征在于，所述轴承部的底表面具有向上凹陷的凹形状。
5.根据权利要求1至4中任一项所述的承载器，其特征在于，所述空隙形成在所述轴承部的最上端。
6.根据权利要求1至5中任一项所述的承载器，其特征在于，所述空隙沿水平方向全方位地伸出。
7.根据权利要求1至6中任一项所述的承载器，其特征在于，所述空隙具有以所述主轴为中心的圆环形状。
8.根据权利要求1至7中任一项所述的承载器，其特征在于，所述轴承部具有作为所述顶端变细的形状的截头圆锥形状。
9.根据权利要求1至8中任一项所述的承载器，其特征在于，所述轴承部与所述主轴之间的嵌合面占所述主轴的侧表面的插入所述轴承部内的部分的面积的80％以上。
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