CN204417651U - 一种具有温度梯度调整作用的用于制备碳化硅晶体的坩埚 - Google Patents
一种具有温度梯度调整作用的用于制备碳化硅晶体的坩埚 Download PDFInfo
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CN111218716A (zh) * | 2018-11-26 | 2020-06-02 | 昭和电工株式会社 | SiC单晶锭的制造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN111218716A (zh) * | 2018-11-26 | 2020-06-02 | 昭和电工株式会社 | SiC单晶锭的制造方法 |
CN111218716B (zh) * | 2018-11-26 | 2022-04-26 | 昭和电工株式会社 | SiC单晶锭的制造方法 |
US11761114B2 (en) | 2018-11-26 | 2023-09-19 | Resonac Corporation | Method of producing SiC single crystal ingot |
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Denomination of utility model: Crucible having temperature gradient adjusting function and being used for preparing silicon carbide crystals Effective date of registration: 20160826 Granted publication date: 20150624 Pledgee: Chinese for key construction fund limited Pledgor: Hebei Tongguang Crystal Co., Ltd. Registration number: 2016990000669 |
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Date of cancellation: 20201207 Granted publication date: 20150624 Pledgee: Chinese for key construction fund Ltd. Pledgor: HEBEI TONGGUANG CRYSTAL Co.,Ltd. Registration number: 2016990000669 |
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Address after: 071066 No. 6001, North Third Ring Road, Baoding City, Hebei Province Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: 071051 room A007, 4th floor, block B, building 6, University Science Park, 5699 Second Ring Road, Baoding City, Hebei Province Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |