JPWO2018207942A1 - サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 - Google Patents
サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 153
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910003468 tantalcarbide Inorganic materials 0.000 claims abstract description 34
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 230000001105 regulatory effect Effects 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910002804 graphite Inorganic materials 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 230000033228 biological regulation Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 235000019592 roughness Nutrition 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 241000887125 Chaptalia nutans Species 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C30B23/063—Heating of the substrate
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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Abstract
Description
14 基板載置部
20 上段部
21 規制面
22 支持面
30 凹部
31 凹部側面
32 凹部底面
50 SiC基板
Claims (8)
- SiC基板の主面にエピタキシャル層を形成する際に当該SiC基板を載せるサセプタにおいて、
サセプタ上面よりも低い位置に形成され、前記SiC基板の裏面の外周部を支持する支持面と、
前記支持面よりも径方向の内側に形成されており、少なくとも表面が炭化タンタルで構成されており、前記エピタキシャル層の形成処理時において前記SiC基板の裏面と接触しない深さの凹部と、
が形成されていることを特徴とするサセプタ。 - 請求項1に記載のサセプタであって、
前記凹部は全体にわたって深さが同じであることを特徴とするサセプタ。 - 請求項2に記載のサセプタであって、
前記凹部には、基板厚み方向に平行な面である凹部側面と、基板厚み方向に垂直な面である凹部底面と、で構成されていることを特徴とするサセプタ。 - 請求項1に記載のサセプタであって、
前記支持面の径方向の外側に形成されており、前記SiC基板の径方向の移動を規制する規制面を有しており、
前記支持面及び前記規制面の少なくとも表面が炭化タンタルであることを特徴とするサセプタ。 - 請求項1に記載のサセプタであって、
基材の少なくとも一部に異なる組成の層を被覆することで構成されており、
前記凹部は、基材の凹形状部分に炭化タンタル層を形成した構成であることを特徴とするサセプタ。 - 請求項5に記載のサセプタであって、
前記基材が黒鉛であり、少なくともサセプタ上面とサセプタ側面にSiC層が形成されていることを特徴とするサセプタ。 - SiC基板の主面にエピタキシャル層が形成されたエピタキシャル基板の製造方法において、
サセプタに前記SiC基板を載せて化学蒸着法によりエピタキシャル層を形成するエピタキシャル層形成工程を含み、
前記エピタキシャル層形成工程で用いる前記サセプタには、
サセプタ上面よりも低い位置に形成され、前記SiC基板の裏面の外周部を支持する支持面と、
前記支持面よりも径方向の内側に形成されており、少なくとも表面が炭化タンタルで構成されており、前記エピタキシャル層形成工程での処理時において前記SiC基板と接触しない深さの凹部と、
が形成されていることを特徴とするエピタキシャル基板の製造方法。 - SiC基板の主面にエピタキシャル層が形成されたエピタキシャル基板であって、
裏面の表面粗さ(Ra)が1nm以下で、エピタキシャル層中のキャリア濃度の変動係数が4以下であることを特徴とするエピタキシャル基板。
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