WO2017188145A1 - サセプタ - Google Patents

サセプタ Download PDF

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Publication number
WO2017188145A1
WO2017188145A1 PCT/JP2017/016030 JP2017016030W WO2017188145A1 WO 2017188145 A1 WO2017188145 A1 WO 2017188145A1 JP 2017016030 W JP2017016030 W JP 2017016030W WO 2017188145 A1 WO2017188145 A1 WO 2017188145A1
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WO
WIPO (PCT)
Prior art keywords
wafer
susceptor
silicon carbide
mounting surface
surface member
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PCT/JP2017/016030
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English (en)
French (fr)
Inventor
文弥 小林
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株式会社ブリヂストン
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Publication of WO2017188145A1 publication Critical patent/WO2017188145A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to a susceptor that improves heat uniformity.
  • the wafer is held when performing a process for forming a thin film such as gallium nitride (GaN) on the surface of the wafer, for example, a film forming process by metal organic chemical vapor deposition (MOCVD).
  • MOCVD metal organic chemical vapor deposition
  • a wafer holder hereinafter referred to as a susceptor
  • a wafer mounting portion which is a concave portion for holding the wafer, and the bottom surface of the wafer mounting portion becomes the wafer mounting surface.
  • the susceptor is required to have characteristics such as high heat resistance, high durability, and high strength. Therefore, as the susceptor, a silicon carbide member made of high-purity silicon carbide (SiC) or a carbon material base material coated with a SiC film or the like is used (see Patent Documents 1 and 2).
  • the susceptor composed entirely of high-purity SiC has excellent corrosion resistance, but is difficult to process, and the cost of the material is high because of the high material price. For this reason, as a conventional susceptor, it is possible to use a single structure, that is, a one-piece structure, in which an SiC coating (CVD-SiC coating) by chemical vapor deposition is applied on a graphite substrate to enhance corrosion resistance. Many.
  • the wafer is heated via the wafer mounting surface of the susceptor.
  • the wafer mounting surface of the susceptor For example, in a process for performing an epitaxial film formation process of GaN or the like, there are two stages of crystal growth processes of low temperature heating (for example, 600 to 800 ° C.) and high temperature heating (for example, 1000 to 1300 ° C.).
  • temperature uniformity on the wafer surface during film formation is important.
  • the temperature distribution on the wafer surface is affected by the process and conditions during the film forming process, but also the accuracy and shape of the wafer mounting surface of the susceptor.
  • the SiC film has poor workability, the CVD-SiC coated graphite susceptor cannot be finished to increase the surface accuracy after CVD coating, and the fine irregularities generated in the SiC film cannot be removed. For this reason, even with minute irregularities, depending on the size and condition of the irregularities, there may be a gap between the wafer placement surface and the wafer, or the wafer itself cannot be placed flat on the wafer placement surface. In some cases, the thermal uniformity of the wafer may be reduced during heat treatment such as film formation on the wafer.
  • an object of the present invention is to provide a susceptor that can further improve the thermal uniformity of the wafer during the heat treatment of the wafer while maintaining high corrosion resistance.
  • the susceptor according to one embodiment of the present invention has a plate-like substrate.
  • the substrate includes a silicon carbide coating covering the surface and a concave wafer mounting portion on which the wafer is mounted.
  • the wafer mounting portion includes a first portion of the silicon carbide coating that covers the bottom surface of the recess provided on the upper surface of the substrate, and a plate-shaped mounting surface member that is disposed on the first portion of the silicon carbide coating.
  • the mounting surface member is formed of silicon carbide.
  • the thickness of the mounting surface member is thinner than the depth of the recess.
  • the placement surface member has a planar accuracy higher than at least the planar accuracy of the first portion of the silicon carbide coating.
  • the mounting surface member may have a concave portion on the upper surface.
  • the mounting surface member may have a convex portion on the upper surface.
  • the susceptor according to one aspect of the present invention it is possible to further improve the thermal uniformity of the wafer during the heat treatment of the wafer while maintaining high corrosion resistance.
  • FIG. 1 is a top view showing a susceptor according to an embodiment.
  • FIG. 2 is a cross-sectional view of a susceptor according to an embodiment.
  • FIG. 3 is a cross-sectional view illustrating a first modification of the susceptor according to the embodiment.
  • FIG. 4 is a cross-sectional view showing a second modification of the susceptor according to the embodiment.
  • FIG. 1 is a diagram illustrating a top surface of a susceptor 100 according to an embodiment.
  • FIG. 2 is a view schematically showing a II-II section of the susceptor 100 shown in FIG.
  • the susceptor 100 includes a base body 10 including a silicon carbide (SiC) film 11 covering a surface and a concave wafer mounting portion 13 provided on an upper surface 12.
  • the SiC coating 11 enhances the corrosion resistance of the substrate 10.
  • the substrate 10 is made of graphite with a CVD-SiC coating, for example.
  • the wafer placement portion 13 on which the wafer is placed is a plate disposed on the portion of the SiC coating 11 that covers the recess 14 formed on the upper surface 12 of the substrate 10 and the SiC coating 11 that covers the bottom surface 14 a of the recess 14.
  • the mounting surface member 15 is provided.
  • the upper surface of the mounting surface member 15 serves as a wafer mounting surface 15a on which the wafer is mounted.
  • the thickness D1 of the mounting surface member 15 is smaller than the depth D2 of the recess 14. Thereby, the wafer mounting part 13 can maintain a concave shape, and can hold
  • the base body 10 has a plate shape, and has a circular shape on a projection plane parallel to the upper surface 12, that is, in plan view. Further, the wafer placement unit 13 has a circular shape in plan view, and the placement surface member 15 also has a circular shape in plan view.
  • a heating source (heater) at the time of wafer processing may be disposed on the upper surface 12 side of the substrate 10 or may be disposed on the lower surface 16 side.
  • the mounting surface member 15 is formed of a SiC base material. By using the SiC base material, the mounting surface member 15 can have high corrosion resistance and high thermal conductivity, and has excellent shape stability even at a high temperature in the film forming process on the wafer. It can be.
  • the SiC substrate preferably has a thermal conductivity of 200 W / (m ⁇ K) or more at room temperature, and the SiC substrate has a boron (B) content of 0.05 mass ppm or less. Is preferable.
  • the upper surface of the mounting surface member 15 which becomes the wafer mounting surface 15a is assumed to have high planar accuracy. It is assumed that the accuracy is at least higher than the planar accuracy of the portion of the SiC film 11 covering the bottom surface 14a.
  • the susceptor 100 is provided with the mounting surface member 15 whose upper surface is the wafer mounting surface 15a as a separate member from the base body 10. Furthermore, by forming the mounting surface member 15 with a SiC base material, the mounting surface member has high corrosion resistance and high thermal conductivity, and is excellent in shape stability and temperature uniformity at high temperatures. .
  • the susceptor 100 of the present embodiment has a wafer mounting surface 15a that is the upper surface of the mounting surface member 15 even if a slight unevenness is generated in the SiC coating provided for improving the corrosion resistance of the entire surface of the base 10. Can maintain high plane accuracy without being affected by the unevenness. Further, the mounting surface member 15 itself is also formed with excellent heat uniformity. Therefore, the susceptor 100 of the present embodiment can further improve the thermal uniformity of the wafer during the heat treatment such as a film forming process on the wafer while maintaining high corrosion resistance on the entire surface.
  • FIG. 3 is a schematic cross-sectional view showing a first modification
  • FIG. 4 is a schematic cross-sectional view showing a second modification.
  • the shape of the wafer placement surfaces 25a and 35a is modified from the wafer placement surface 15a of the susceptor 100 shown in FIG.
  • the wafer In film formation processing such as epitaxial film formation processing on a wafer, depending on the type of film formation, the wafer may be warped and deformed into a concave or convex shape at high temperature heating due to the difference in thermal expansion coefficient between the thin film to be formed and the wafer. . If a gap is generated between the wafer mounting surface and the wafer during the deformation, heat transfer to the wafer may not be performed uniformly, and the film thickness of the thin film may vary.
  • the wafer mounting surface (the upper surface of the mounting surface member) to a surface having a shape that matches the deformation shape of the wafer, there is a gap between the wafer mounting surface and the wafer even during wafer deformation. It becomes difficult to generate
  • the wafer mounting surface may be a shape having a concave surface, for example, a concave spherical shape.
  • the wafer mounting surface may be formed into a shape having a convex surface portion, for example, a convex spherical shape.
  • the wafer mounting surface 25a which is the upper surface of the mounting surface member 25, has a concave spherical shape.
  • the wafer mounting surface 35 a that is the upper surface of the mounting surface member 35 is formed into a convex spherical shape.
  • the first and second modifications are the same as the susceptor 100 shown in FIGS. 1 and 2 except for the shapes of the wafer mounting surfaces 25a and 35a.
  • the heat treatment such as the film forming process on the wafer is performed.
  • the soaking property of the wafer can be further improved.
  • the susceptor 100 of the present embodiment can follow the wafer mounting surface shape to various deformed shapes of the wafer during the heat treatment of the wafer by exchanging the mounting surface member.
  • the susceptor according to one aspect of the present invention it is possible to further improve the thermal uniformity of the wafer during the heat treatment of the wafer while maintaining high corrosion resistance.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

サセプタ（１００）は、板状の基体（１０）を有する。基体（１０）は、表面を被覆する炭化ケイ素被膜（１１）と、ウェハが載置される凹形状のウェハ載置部（１３）とを備える。ウェハ載置部（１３）は、基体（１０）の上面（１２）に設けられた凹部（１４）の底面（１４ａ）を覆う炭化ケイ素被膜（１１）の第１部位と、炭化ケイ素被膜（１１）の第１部位上に配置された板状の載置面部材（１５）とを備える。載置面部材（１５）は、炭化ケイ素により形成される。載置面部材（１５）の厚さ（Ｄ１）は、凹部（１４）の深さ（Ｄ２）よりも薄い。載置面部材（１５）は、少なくとも炭化ケイ素被膜（１１）の第１部位の平面精度より高い平面精度を有する。

Description

サセプタ
　本発明は、均熱性を向上させるサセプタに関する。
　従来、半導体を製造する工程等において、ウェハの表面に窒化ガリウム（ＧａＮ）等の薄膜を生成する処理、例えば有機金属気相成長法(ＭＯＣＶＤ)による成膜工程等を行う際に、ウェハを保持するウェハホルダ（以下、サセプタ）が用いられる。
　サセプタの上面には、ウェハを保持する凹部であるウェハ載置部が設けられており、ウェハ載置部の底面がウェハ載置面となる。このサセプタには、高耐熱、高耐久、高強度等の特性が要求される。従って、サセプタとしては、高純度の炭化ケイ素（ＳｉＣ）によって構成される炭化ケイ素部材、炭素素材の基材にＳｉＣ被膜等をコーティングしたものが用いられる（特許文献１，２参照）。
　全体が高純度のＳｉＣで構成されるサセプタは、耐腐食性に優れるが、加工が難しく、また、素材価格が高いのでコスト高となる。このため、従来のサセプタとしては、グラファイト基材の上に化学蒸着法によるＳｉＣコーティング（ＣＶＤ－ＳｉＣコート）を施して耐腐食性を高めた、単体構造、つまり一体型構造のものを用いることが多い。
特開２０００－３３２０９６号公報 特開２０１０－２３９０２０号公報
　ウェハ表面への成膜処理時には、ウェハはサセプタのウェハ載置面を介して加熱される。例えば、ＧａＮ等のエピタキシャル成膜処理を行うプロセスでは、低温加熱（例えば６００～８００℃）と高温加熱（例えば１０００～１３００℃）との２段階の結晶成長工程がある。
　均一な膜厚の良質な薄膜を得るためには、成膜処理時のウェハ表面における温度の均一性が重要である。このウェハ表面における温度分布には、成膜処理時のプロセス、条件が影響を与えるが、サセプタのウェハ載置面の精度、形状も影響を与える。
　ここで、サセプタとなるグラファイト基材の表面へのＣＶＤ－ＳｉＣコート時には、ＣＶＤ処理の精度のバラツキやグラファイト基材表面の精度のバラツキにより、ＳｉＣ被膜に微少な凹凸が発生する場合がある。ウェハ載置面もこのＳｉＣ被膜により被覆されるので、ウェハ載置面にも微少な凹凸が発生する場合がある。
　しかし、ＳｉＣ被膜は加工性が悪いため、ＣＶＤ－ＳｉＣコートグラファイト製のサセプタは、ＣＶＤコート後には表面の精度を上げる仕上げ加工ができず、ＳｉＣ被膜に発生した微少な凹凸を除去できない。このため、微小な凹凸であっても、凹凸のサイズや発生状態によっては、ウェハ載置面とウェハとの間に隙間が生じたり、ウェハ載置面にウェハ自体を平坦に置けない状況が生じたりする場合があり、ウェハへの成膜処理等の加熱処理時にウェハの均熱性が低下することがあった。
　そこで、本発明は、高い耐腐食性を維持しつつ、ウェハに対する加熱処理時における、ウェハの均熱性をより一層向上させることのできるサセプタを提供することを目的とする。
　本発明の一態様に係るサセプタは、板状の基体を有する。基体は、表面を被覆する炭化ケイ素被膜と、ウェハが載置される凹形状のウェハ載置部とを備える。そして、ウェハ載置部は、基体の上面に設けられた凹部の底面を覆う炭化ケイ素被膜の第１部位と、炭化ケイ素被膜の第１部位上に配置された板状の載置面部材とを備える。載置面部材は、炭化ケイ素により形成される。載置面部材の厚さは、凹部の深さよりも薄い。載置面部材は、少なくとも炭化ケイ素被膜の第１部位の平面精度より高い平面精度を有する。
　載置面部材は、上面に凹面部を有するものであってもよい。
　載置面部材は、上面に凸面部を有するものであってもよい。
　本発明の一態様に係るサセプタによれば、高い耐腐食性を維持しつつ、ウェハに対する加熱処理時における、ウェハの均熱性をより一層向上させることができる。
図１は、一実施形態に係るサセプタを示す上面図である。 図２は、一実施形態に係るサセプタの断面図である。 図３は、一実施形態に係るサセプタの第１変形例を示す断面図である。 図４は、一実施形態に係るサセプタの第２変形例を示す断面図である。
　以下において、本発明の実施形態に係るサセプタについて、図面を参照しながら説明する。なお、以下の図面の記載において、同一又は類似の部分には、同一又は類似の符号を付している。
　一実施形態に係るサセプタについて、図１、図２を参照しながら説明する。図１は、一実施形態に係るサセプタ１００の上面を示す図である。図２は、サセプタ１００の図１に示すＩＩ－ＩＩ断面を模式的に示す図である。
　図１及び図２に示すように、サセプタ１００は、表面を被覆する炭化ケイ素（ＳｉＣ）被膜１１と、上面１２に設けられた凹状のウェハ載置部１３とを備えた基体１０を有する。ＳｉＣ被膜１１により、基体１０の耐腐食性を高めている。基体１０は、例えば、ＣＶＤ－ＳｉＣコートを施したグラファイトにより形成される。
　ウェハが載置されるウェハ載置部１３は、基体１０の上面１２に形成された凹部１４を覆うＳｉＣ被膜１１と、凹部１４の底面１４ａを覆うＳｉＣ被膜１１の部位の上に配置された板状の載置面部材１５とを備えている。載置面部材１５の上面は、ウェハが載置されるウェハ載置面１５ａとなる。載置面部材１５の厚さＤ１は、凹部１４の深さＤ２よりも小さいものとする。このことによって、ウェハ載置部１３は凹形状を維持でき、ウェハを確実に保持できる。
　基体１０は、板状の形状であり、上面１２と平行な投影面において、すなわち平面視で円形形状を有する。また、ウェハ載置部１３は、平面視において円形形状を有し、載置面部材１５も平面視において円形形状を有する。
　なお、図示しないが、ウェハ処理時の加熱源（ヒータ）は、基体１０の上面１２側に配置されてもよいし、下面１６側に配置されてもよい。
　載置面部材１５は、ＳｉＣ基材により形成される。ＳｉＣ基材を用いることにより、載置面部材１５を高い耐腐食性、高い熱伝導性を有するものとすることができ、ウェハへの成膜処理における高温時においても形状安定性に優れたものとすることができる。このＳｉＣ基材の熱伝導率としては、室温において２００Ｗ／（ｍ・Ｋ）以上のものであることが好ましく、また、ＳｉＣ基材は、ホウ素（Ｂ）の含有量が０．０５質量ｐｐｍ以下であると好ましい。また、ウェハ載置面１５ａとなる載置面部材１５の上面は、高い平面精度を有するものとする。少なくとも、底面１４ａを覆うＳｉＣ被膜１１の部位の平面精度より高い精度を有するものとする。
　このように、本実施形態のサセプタ１００は、上面をウェハ載置面１５ａとする載置面部材１５を基体１０とは別部材として設けている。さらに、載置面部材１５をＳｉＣ基材により形成することによって、高い耐腐食性、高い熱伝導性を有し、さらに高温時における形状安定性と均熱性とに優れた載置面部材としている。
　よって、本実施形態のサセプタ１００は、基体１０表面全体の耐腐食性向上のために備えるＳｉＣ被膜に微少な凹凸が発生していても、載置面部材１５の上面であるウェハ載置面１５ａは、その凹凸の影響を受けることなく、高い平面精度を保てる。また、載置面部材１５自体も均熱性に優れたものとして形成されている。従って、本実施形態のサセプタ１００は、表面全体として高い耐腐食性を維持しつつ、ウェハに対する成膜処理等の加熱処理時における、ウェハの均熱性をより一層向上させることができる。
　次に、本実施形態に係るサセプタ１００の変形例について、図３、図４を参照しながら説明する。図３は、第１変形例を示す模式的な断面図、図４は、第２変形例を示す模式的な断面図である。この第１、第２変形例はウェハ載置面２５ａ、３５ａの形状を、図２に示すサセプタ１００のウェハ載置面１５ａから変形したものである。
　ウェハに対するエピタキシャル成膜処理等の成膜処理において、成膜の種類によっては、成膜される薄膜とウェハとの熱膨張率の差により、高温加熱時にウェハが凹または凸に反り変形する場合がある。その変形時に、ウェハ載置面とウェハとの間に隙間が発生すると、ウェハへの熱伝達が均一に行われない場合があり、薄膜の膜厚にバラつきが発生することがある。
　そこで、ウェハ載置面(載置面部材の上面)を、ウェハの変形形状に合わせた形状を有する面とすることにより、ウェハ変形時においても、ウェハ載置面とウェハとの間に隙間が発生しにくくなり、ウェハへの熱伝達をより一層均一に行うことができる。例えば、サファイヤウェハにＧａＮを成膜する場合、成膜中にウェハは凹形状になる。そのウェハの変形形状に合わせ、ウェハ載置面を凹面部を有する形状、例えば凹球面形状にするとよい。また、成膜中にウェハが凸形状に変形する場合には、ウェハ載置面を凸面部を有する形状、例えば凸球面形状にするとよい。
　図３に示す第１変形例は、載置面部材２５の上面であるウェハ載置面２５ａを、凹球面形状にしたものである。図４に示す第２変形例は、載置面部材３５の上面であるウェハ載置面３５ａを、凸球面形状にしたものである。なお、この第１、第２変形例はウェハ載置面２５ａ、３５ａの形状以外は、図１、２に示すサセプタ１００と同様である。
　このように、第１、第２変形例は、成膜処理等の加熱処理におけるウェハの変形形状に合わせた形状を有するウェハ載置面とすることにより、ウェハに対する成膜処理等の加熱処理時における、ウェハの均熱性をさらに一層向上させることができる。
　また、本実施形態のサセプタ１００は、載置面部材を交換することにより、ウェハに対する加熱処理時のウェハの様々な変形形状に、ウェハ載置面形状を追従させることが可能となる。
　以上、本発明の実施形態について説明したが、これらの実施形態は本発明の理解を容易にするために記載された単なる例示に過ぎず、本発明は当該実施形態に限定されるものではない。本発明の技術的範囲は、上記実施形態で開示した具体的な技術事項に限らず、そこから容易に導きうる様々な変形、変更、代替技術なども含むものである。
　本出願は、２０１６年４月２６日に出願された日本国特許出願第２０１６－０８７７７５号に基づく優先権を主張しており、この出願の全内容が参照により本願明細書に組み込まれる。
　本発明の一態様に係るサセプタによれば、高い耐腐食性を維持しつつ、ウェハに対する加熱処理時における、ウェハの均熱性をより一層向上させることができる。
　１０　基体　１１　炭化ケイ素（ＳｉＣ）被膜　１２　上面　１３　ウェハ載置部　１４　凹部　１４ａ　底面　１５、２５、３５　載置面部材　１５ａ、２５ａ、３５ａ　ウェハ載置面　１６　下面　１００　サセプタ

Claims (3)

  1. 　表面を被覆する炭化ケイ素被膜と、ウェハが載置される凹形状のウェハ載置部とを備えた板状の基体を有するサセプタであって、
    　前記ウェハ載置部は、
    　前記基体の上面に設けられた凹部の底面を覆う前記炭化ケイ素被膜の第１部位と、
    　前記炭化ケイ素被膜の第１部位上に配置され、厚さが前記凹部の深さよりも薄い、炭化ケイ素により形成された板状の載置面部材とを備え、
    　前記載置面部材は、少なくとも前記炭化ケイ素被膜の第１部位の平面精度より高い平面精度を有する、ことを特徴とするサセプタ。
  2. 　前記載置面部材は、上面に凹面部を有することを特徴とする請求項１に記載のサセプタ。
  3. 　前記載置面部材は、上面に凸面部を有することを特徴とする請求項１に記載のサセプタ。
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