TW201803010A - 晶座 - Google Patents

晶座 Download PDF

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TW201803010A
TW201803010A TW106113650A TW106113650A TW201803010A TW 201803010 A TW201803010 A TW 201803010A TW 106113650 A TW106113650 A TW 106113650A TW 106113650 A TW106113650 A TW 106113650A TW 201803010 A TW201803010 A TW 201803010A
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wafer
mounting surface
silicon carbide
coating film
substrate
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小林文彌
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普利司通股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一種晶座，係具有板狀之基體。基體係具備有：披覆表面之碳化矽披覆膜；以及載置晶圓之凹狀的晶圓載置部。晶圓載置部係具備有：覆蓋基體上面所設置之凹部的底面之碳化矽披覆膜的第1部位，以及碳化矽披覆膜之第1部位上所配置之板狀的載置面構件。載置面構件會藉由碳化矽來加以形成。載置面構件之厚度會較凹部之深度要薄。載置面構件具有至少較碳化矽披覆膜之第1部位的平面精度要高之平面精度。

Description

晶座
本發明係關於一種提升熱均勻性之晶座。
自以往，在製造半導體之工序等中，於晶圓表面進行生成氮化鎵(GaN)等的薄膜之處理，例如利用有機金屬氣相沉積法(MOCVD)的成膜工序等時，會使用保持晶圓的晶圓保持具(以下稱為晶座)。
晶座上面係設置有為保持晶圓之凹部的晶圓載置部，晶圓載置部之底面會成為晶圓載置面。此晶座會被要求有高耐熱、高耐久、高強度等的特性。從而，作為晶座係使用有將SiC披覆膜等塗布於藉由高純度之碳化矽(SiC)來構成之碳化矽構件或碳材之基材者(參照專利文獻1、2)。
雖然整體以高純度之SiC來構成的晶座具有優良的耐腐蝕性，但卻難以加工，又，由於材料價格高故使得成本提高。因此，以往的晶座大多是使用在石墨基材上施予利用化學蒸鍍法之SiC塗布(CVD-SiC塗布)，以提高耐腐蝕性之單體構造，亦即一體成形構造者。
【先前技術文獻】
【專利文獻】
專利文獻1：日本特開2000-332096號公報
專利文獻2：日本特開2010-239020號公報
在對晶圓表面進行成膜處理時，晶圓會透過晶座之晶圓載置面而被加熱。例如在進行GaN等的磊晶成膜處理的程序中，係具有低溫加熱(例如600~800℃)與高溫加熱(例如1000~1300℃)的兩階段結晶成長工序。
為了得到均勻膜厚之優質薄膜，在成膜處理時之晶圓表面的溫度均勻性是很重要的。成膜處理時之程序及條件會對此晶圓表面的溫度分布造成影響，但晶座之晶圓載置面的精度及形狀亦會造成影響。
於是，在朝會成為晶座之石墨基材表面進行CVD-SiC塗布時，會因CVD處理之精度不均勻或石磨基材表面之精度不均勻，而有在SiC披覆膜產生微小凹凸之情況。由於晶圓載置面亦會藉由此SiC披覆膜來被加以披覆，故亦會有在晶圓載置面產生微小凹凸的情況。
然而，由於SiC披覆膜的加工性不佳，故CVD-SiC塗布石墨製之晶座便無法在CVD塗布後進行提升表面精度之精細加工，而無法去除產生在SiC披覆膜之微小凹凸。因此，即便是微小凹凸，仍會因凹凸之尺寸或產生狀態而有在晶圓載置面與晶圓之間產生有間隙，或是產生無法將晶圓本身平坦地置放於晶圓載置面的情況，使得在對晶圓進行成膜處理等之加熱處理時會讓晶圓之熱均勻性下降。
於是，本發明的目的在於提供一種可維持高耐腐蝕性，且在對晶圓加熱處理時更進一步地提升晶圓之熱均勻性的晶座。
本發明一態樣相關之晶座，係具有板狀的基體。基體係具備有：披覆表面之碳化矽披覆膜；以及載置晶圓之凹形狀的晶圓載置部。然後，晶圓載置部係具備有：碳化矽披覆膜之第1部位，係覆蓋基體上面所設置之凹部的底面；以及板狀的載置面構件，係配置於碳化矽披覆膜之第1部位上。載置面構件係藉由碳化矽來加以形成。載置面構件之厚度會較凹部之深度要薄。載置面構件係具有至少較碳化矽披覆膜之第1部位的平面精度要高之平面精度。
載置面構件可於上面具有凹面部。
載置面構件可於上面具有凸面部。
根據本發明一態樣相關之晶座，便可維持高耐腐蝕性，且在對晶圓加熱處理時會讓晶圓之熱均勻性更進一步地提升。
10‧‧‧基體
11‧‧‧碳化矽(SiC)披覆膜
12‧‧‧上面
13‧‧‧晶圓載置部
14‧‧‧凹部
14a‧‧‧底面
15、25、35‧‧‧載置面構件
15a、25a、35a‧‧‧晶圓載置面
16‧‧‧下面
100‧‧‧晶座
圖1係顯示一實施形態相關之晶座的俯視圖。
圖2係顯示一實施形態相關之晶座的剖面圖。
圖3係顯示一實施形態相關之晶座的第1變形例之剖面圖。
圖4係顯示一實施形態相關之晶座的第2變形例之剖面圖。
以下，便參照圖式，就本發明實施形態相關之晶座來加以說明。另外，在以下圖式的記載中，係對相同或類似的部分附加相同或類似的符號。
參照圖1、圖2，就一實施形態相關之晶座來加以說明。圖1係顯示一實施形態相關之晶座100上面的圖式。圖2係概略性地顯示晶座100之圖1所示的II-II剖面之圖式。
如圖1及圖2所示，晶座100係具有基體10，該基體10係具有披覆表面之碳化矽(SiC)披覆膜11以及設置於上面12的凹狀之晶圓載置部13。因為SiC披覆膜11，便使得基體10之耐腐蝕性提高。基體10係藉由施予CVD-SiC塗布後之石墨來加以形成。
載置晶圓之晶圓載置部13係具備有覆蓋基體10上面所形成之凹部14的SiC披覆膜11，以及覆蓋凹部14之底面14a的SiC披覆膜11的部位上所配置之板狀的載置面構件15。載置面構件15上面會成為載置晶圓之晶圓載置面15a。載置面構件15之厚度D1會成為較凹部14之深度D2要小者。藉由此構成，晶圓載置部13便可維持凹狀，並可確實地保持晶圓。
基體10係板狀形狀，並具有在與上面12平行之投影面中，亦即在俯視觀察下具有圓形形狀。又，晶圓載置部13係在俯視觀察下具有圓形形狀，且載置面構件15亦在俯視觀察下具有圓形形狀。
另外，雖未圖示，但晶圓處理時之加熱源(加熱器)係可配置於基體10之上面12側，亦可配置於下面16側。
載置面構件15會藉由SiC基材來加以形成。藉由使用SiC基材，便可使得載置面構件15具有高耐腐蝕性、高熱傳導性，而成為即便在對晶圓進行成膜處理中於高溫時仍可具有優良形狀穩定性者。較佳地，此SiC基材的熱傳導率在室溫下為200W/(m．K)以上，又，較佳地，SiC基材係硼(B)含量為0.05質量ppm以下。又，會成為晶圓載置面15a之載置面構件15上面係具有高平面精度。為具有至少較覆蓋底面14a之SiC批覆膜11的部位的平面精度要高之精度者。
如此般，本實施形態之晶座100會將上面作為晶圓載置面15a之載置面構件15設置為不同於基體10的其他構件。進一步地，藉由將載置面15以SiC 基材來加以形成，來成為具有高耐腐蝕性、高熱傳導性，且進一步地具有在高溫時優良形狀穩定性與熱均勻性的載置面構件。
因此，本實施形態之晶座100即便在為了提高基體10表面整體之耐腐蝕性而具備的SiC披覆膜產生微小凹凸，為載置面構件15上面之晶圓載置面15a仍不會受到該凹凸之影響，而保持高平面精度。又，載置面構件15本身亦會形成為優良熱均勻性者。從而，本實施形態之晶座100的表面整體便可維持高耐腐蝕性，並在對晶圓進行成膜處理等的加熱處理時，更進一步地提升晶圓的熱均勻性。
接著，便參照圖3、圖4，就本實施形態相關之晶座100的變形例來加以說明。圖3係顯示第1變形例之概略性剖面圖，圖4係顯示第2變形例之概略性剖面圖。此第1、第2變形例係將晶圓載置面25a、35a之形狀從圖2所示之晶座100的晶圓載置面15a來加以變形者。
在對晶圓進行磊晶成膜處理等的成膜處理中，會依成膜的種類而導致因所成膜之薄膜與晶圓的熱膨脹率之差異，在高溫加熱時會有讓晶圓翹曲變形為凹或是凸的情況。在該變形時，於晶圓載置面與晶圓之間產生有間隙時，便會有無法對晶圓均勻地進行熱傳導的情況，而會有在薄膜之膜厚產生不均勻的情事。
於是，藉由將晶圓載置面(載置面構件上面)成為具有配合晶圓之變形形狀的形狀之面，則即便在晶圓變形時，仍難以在晶圓載置面與晶圓之間產生間隙，而可對晶圓更進一步均勻性地進行熱傳導。例如，在藍寶石晶圓成膜出GaN的情況，晶圓會在成膜中成為凹形狀。可配合此晶圓之變形形狀，來將晶圓載置面成為具有凹面部之形狀，例如凹球面形狀。又，在晶圓於成膜中變形為凸形狀的情況，便可將晶圓載置面成為具有凸面部之形狀，例如凸球面形狀。
圖3所示之第1變形例係將為載置面構件25上面之晶圓載置面25a成為凹球面形狀者。圖4所示之第2變形例係將為載置面構件35上面之晶圓載置面35a成為凸球面形狀者。另外，此第1、第2變形例除了晶圓載置面25a、35a的形狀以外，都與圖1、2所示之晶座100相同。
如此般，第1、第2變形例會藉由成為具有配合在成膜處理等的加熱處理中晶圓之變形形狀的形狀之晶圓載置面，便可在對晶圓進行成膜處理等 的加熱處理時，更進一步地提升晶圓的熱均勻性。
又，本實施形態之晶座100係可藉由替換載置面構件，來讓晶圓載置面形狀迎合為對晶圓進行加熱處理時之晶圓的各種變形形狀。
以上，雖已就本發明之實施形態來加以說明，但該等實施形態不過是為了易於理解本發明而記載的例示，而本發明並不被限制於該實施形態。本發明之技術範圍並不限於上述實施形態所揭露之具體技術事項，亦包含有可易於從其所引導出之各種變形、變更以及替代技術等。
本發明係基於2016年4月26日所申請之日本特許出願第2016-087775號來主張優先權，並藉由參照來將此申請案的全部內容併入至本案說明書。
【產業利用性】
根據本發明一態樣的晶座，便可維持高耐腐蝕性，且在對晶圓進行加熱處理時，更進一步地提升晶圓的熱均勻性。
10‧‧‧基體
11‧‧‧碳化矽(SiC)披覆膜
12‧‧‧上面
13‧‧‧晶圓載置部
14‧‧‧凹部
14a‧‧‧底面
15‧‧‧載置面構件
15a‧‧‧晶圓載置面
16‧‧‧下面
100‧‧‧晶座
D1‧‧‧厚度
D2‧‧‧深度

Claims (3)

  1. 一種晶座，係具有板狀的基體之晶座，該基體具備披覆表面之碳化矽披覆膜以及載置晶圓之凹狀的晶圓載置部；該晶圓載置部係具備有：該碳化矽披覆膜之第1部位，係覆蓋該基體上面所設置之凹部的底面；以及板狀的載置面構件，係配置於該碳化矽披覆膜之第1部位上，且厚度會較該凹部之深度要薄，並藉由碳化矽來加以形成；該載置面構件係具有至少較碳化矽披覆膜之第1部位的平面精度要高之平面精度。
  2. 如申請專利範圍第1項之晶座，其中該載置面構件係於上面具有凹面部。
  3. 如申請專利範圍第1項之晶座，其中該載置面構件係於上面具有凸面部。
TW106113650A 2016-04-26 2017-04-24 晶座 TW201803010A (zh)

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