TW201907050A - 承載盤、磊晶基板的製造方法及磊晶基板 - Google Patents

承載盤、磊晶基板的製造方法及磊晶基板 Download PDF

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TW201907050A
TW201907050A TW107116144A TW107116144A TW201907050A TW 201907050 A TW201907050 A TW 201907050A TW 107116144 A TW107116144 A TW 107116144A TW 107116144 A TW107116144 A TW 107116144A TW 201907050 A TW201907050 A TW 201907050A
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silicon carbide
substrate
carbide substrate
epitaxial layer
carrier plate
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坂口卓也
篠原正人
野上暁
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日商東洋炭素股份有限公司
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Abstract

本發明之承載盤，係於碳化矽基板的主面形成磊晶層時用以載置該碳化矽基板的構件。於該承載盤形成有支撐面(22)及凹部(30)。支撐面(22)係形成於較承載盤上面(11)低的位置，且支撐碳化矽基板之背面的外周部。凹部(30)係形成於較支撐面(22)更靠徑向的內側，至少表面由碳化鉭構成，且深度係於磊晶層的形成處理時不會與碳化矽基板的背面接觸的深度。

Description

承載盤、磊晶基板的製造方法及磊晶基板
本發明主要關於一種於碳化矽基板上形成磊晶層時使用的承載盤。
先前已知一種於使碳化矽基板支撐在承載盤(susceptor)上的狀態下藉由化學蒸鍍法而於碳化矽基板的主面形成磊晶層的處理。其中，當於碳化矽基板上形成磊晶層時，因主面與背面之熱膨脹率的差而有可能產生朝背面側隆起狀的翹曲。
專利文獻1揭示有一種用於碳化矽基板的磊晶生長的承載盤。該承載盤的表面係由TaC膜被覆。此外，於該承載盤上形成有配合磊晶層形成時之碳化矽基板的翹曲而彎曲的曲面。藉由該構成，可於磊晶層的形成時減輕施加於TaC的被覆膜的拉伸應力，因而能使TaC的被覆膜難以剝落。
專利文獻2揭示一種使用將TaC被覆於碳材上之構成的承載盤而於碳化矽基板形成磊晶層的方法。於專利文獻2的方法中，藉由將板載置於承載盤上且高溫加熱承載盤，使形成於承載盤之表面的碳化矽膜附著於板上。藉由該構成，可防止附著於承載盤上的SiC成為塵粒源。
專利文獻文獻3揭示一種於氮化物系半導體基板上形成化合物半導體膜時而使用的基板保持器。於一部分的氮化物系半導體基板上，有可能產生異向性的翹曲。因此，於該基板保持器上形成有配合異向性之翹曲的非對稱的凹部。此外，該凹部係以不會與產生有翹曲之狀態的氮化物系半導體基板接觸的方式構成。藉由該構成，能將氮化物系半導體基板的面內溫度分佈均勻化。 [先前技術文獻] [專利文獻]
專利文獻1：日本特開2017-22320號公報 　　專利文獻2：日本特開2015-204434號公報 　　專利文獻3：日本特開2010-80614號公報
(發明所欲解決的問題)
在此，於碳化矽基板上形成磊晶層的步驟中，由於需要進行高溫加熱，因而自碳化矽基板的背面產生SiC的昇華，進而有可能使碳化矽基板的背面變得粗糙。於碳化矽基板的背面粗糙的情況下，會於之後進行的元件製作步驟中造成吸附碳化矽基板的背面的作業變得困難。因此，需有能消除碳化矽基板之背面的粗糙的處理(鏡面加工等)。
專利文獻1中，於使碳化矽基板的背面接觸於TaC膜的狀態下形成磊晶層。即使於該情況下，因承載盤的熱直接傳遞，因而碳化矽基板的背面仍會變得粗糙。專利文獻2中，雖然碳化矽基板的背面在將碳化矽基板載置於承載盤的階段會浮起，但關於在碳化矽基板上產生翹曲時的接觸/非接觸，則並無記載。專利文獻3係一種不是以碳化矽基板而是以氮化物系半導體基板作為對象之技術。此外，專利文獻3係以使氮化物系半導體基板的面內溫度分佈均勻化為目的，而僅僅使面內溫度分佈均勻化，並不能防止碳化矽基板背面的粗糙。
本發明係鑑於以上的情狀而完成者，其主要目的，在於提供一種在用於碳化矽基板的磊晶生長的承載盤上，碳化矽基板的背面不易粗糙的構成。 (解決問題的技術手段及功效)
本發明所欲解決的問題，誠如上述，以下對用以解決該問題的手段及其功效進行說明。
根據本發明的第1觀點，提供一種以下構成的承載盤。即，承載盤係於碳化矽基板的主面形成磊晶層時用以載置該碳化矽基板的構件。於該承載盤形成有支撐面及凹部。上述支撐面係形成於較承載盤上面低的位置，且支撐上述碳化矽基板的背面的外周部。上述凹部係形成於較上述支撐面更靠徑向的內側，至少表面由碳化鉭構成，且深度係於上述磊晶層的形成處理時不會與上述碳化矽基板的背面接觸的深度。
藉此，由於在磊晶層的形成處理時碳化矽基板的背面(詳細為外周部以外的部分)不與承載盤接觸，因此承載盤的熱不會直接傳遞。此外，碳化鉭例如與石墨等比較，因為熱輻射率低，因此碳化矽基板背面的溫度不易昇溫。根據以上構成，藉由使用上述承載盤，於碳化矽基板上形成磊晶層時，能使背面不易變得粗糙。此外，例如，於形成厚度厚的磊晶層的情況下，由於處理時間變長，因而碳化矽基板背面的粗糙度容易行進(與石墨比較時的背面粗糙的差異更顯著)。因此，能更有效地利用碳化矽基板的背面不易粗糙之本發明的功效。
於上述承載盤中，較佳為，上述凹部全體係深度相同。
於上述承載盤中，較佳為，上述凹部係由平行於基板厚度方向的表面即凹部側面、及垂直於基板厚度方向的表面即凹部底面構成。
採用此種的形狀，可防止磊晶層形成時的碳化矽基板與承載盤之接觸。因此，可根據碳化矽基板的直徑、厚度、處理時間、承載盤的組成等而實現最適宜之形狀的承載盤。
於上述承載盤中，較佳設為以下的構成。即，承載盤係具有限制面，該限制面係形成於上述支撐面的徑向外側且限制上述碳化矽基板的徑向移動。上述支撐面及上述限制面的至少表面係碳化鉭。
藉此，於支撐面及限制面例如為石墨的情況下，雖然於磊晶層的形成時產生於支撐面及限制面的SiC有可能附著在碳化矽基板上，但藉由設為碳化鉭，可防止SiC的附著。此外，於由SiC構成凹部的表面的情況下，由於磊晶層的形成時該SiC昇華，因此承載盤的壽命有可能變短。與此相對，上述構成除了凹部的表面，支撐面及限制面也為碳化鉭，因此可於設定碳化矽基板的部分的大致全部防止昇華。藉此，可增加承載盤的壽命。
於上述承載盤中，較佳設為以下的構成。即，承載盤係藉由在基材的至少一部分被覆不同組成的層而構成。上述凹部係藉由在基材的凹形狀部分形成碳化鉭層而構成。
藉此，可減少承載盤的成本，並且可選擇性地於特定的部位發揮同樣的功效(碳化矽基板的表面粗糙的抑制)。
於上述承載盤中，較佳為，上述基材係石墨，且至少於承載盤上面及承載盤側面形成有SiC層。
藉此，於以碳化鉭層被覆承載盤整體之情況，會在碳化鉭層上析出SiC，其析出的SiC有可能附著在碳化矽基板上。該點誠如上述，藉由以SiC層被覆承載盤上面及承載盤側面，由於SiC在碳化鉭上不易被析出，因而能防止碳化矽基板的污染。
根據本發明的第2觀點，提供一種以下的磊晶基板的製造方法。即，該製造方法係包含磊晶層形成步驟，於該磊晶層形成步驟中，使上述碳化矽基板載置於承載盤上，且藉由化學蒸鍍法形成磊晶層。於上述磊晶層形成步驟中使用的上述承載盤上形成有支撐面及凹部。上述支撐面係形成於較承載盤上面低的位置，且支撐上述碳化矽基板的背面的外周部。上述凹部係形成於較上述支撐面更靠徑向內側，至少表面由碳化鉭構成，且深度係在上述磊晶層形成步驟的處理時不會與上述碳化矽基板接觸的深度。
根據本發明的第3觀點，提供一種以下構成的磊晶基板。即，該磊晶基板係於碳化矽基板的主面形成有磊晶層者。磊晶基板之背面的表面粗糙度為1nm以下，且磊晶層中的載子濃度(carrier concentration)的變差係數為4以下。
以下，參照圖式對本發明的實施形態進行說明。首先，參照圖1及圖2，對承載盤10的構成進行說明。圖1為本發明之一實施形態的承載盤10之立體圖。圖2為承載盤10之基板載置部14的側面剖視圖。
承載盤10係於碳化矽基板50上形成磊晶層時用以載置碳化矽基板50的構件。於形成磊晶層的步驟中，將碳化矽基板50載置於承載盤10上，且將承載盤10收容於加熱容器內進行化學蒸鍍法(CVD法)。並且，在高溫環境下導入原料氣體等，於碳化矽基板上形成磊晶層。其中，作為被導入加熱容器內的氣體，例如，可列舉作為Si原料的SiH4 、作為C原料的C3 H8 、C2 H2 、用於摻雜的N2 (n型)、(CH3 )3 Al(p型)、及目的在於提高生長速度的HCl、SiH2 Cl2 、SiHCl3 、SiCl4 、CH3 SiCl。此外，於形成磊晶層的步驟中，也可以中心軸作為旋轉軸使承載盤10旋轉。在此，將如以上方式形成有磊晶層的碳化矽基板50稱為磊晶基板。尤其於本說明書中，將形成磊晶層之後(剛形成後)且進行其次的步驟(接著對碳化矽基板50進行機械或化學加工的步驟)之前的基板稱為磊晶基板。其中，其次的步驟，例如，係指調整碳化矽基板50之厚度的步驟、對碳化矽基板50的背面進行鏡面加工的步驟。其等步驟例如可藉由研磨或研削等機械加工而進行，也可藉由Si蒸氣壓力蝕刻而進行，該Si蒸氣壓力蝕刻，係藉由在Si蒸氣壓力下進行加熱而對碳化矽基板50的表面進行蝕刻。
如圖1所示，承載盤10係圓板形狀(圓柱形狀)，且圓形之2面中的一面為承載盤上面11，另一面為承載盤底面13。此外，連接承載盤上面11與承載盤底面13的彎曲面(圓弧面)，係承載盤側面12。於承載盤10的承載盤上面11形成有複數個基板載置部14。
此外，根據組成的觀點對承載盤10進行說明，如圖2所示，其係一種於石墨製基材上形成有TaC層或SiC層的構成。上述承載盤上面11、承載盤側面12及承載盤底面13，係由SiC層構成。此外，基板載置部14的表面(詳細容待後述)，係由TaC層構成。
基板載置部14，係供碳化矽基板50載置並限制碳化矽基板50的移動的部分。如圖2所示，基板載置部14係由上層部20及凹部30構成的2層構造。於上層部20形成有作為側面的限制面21、及作為底面的支撐面22。於凹部30形成有作為側面的凹部側面31、及作為底面的凹部底面32。
支撐面22係圓環狀的面，用以支撐碳化矽基板50。以下，具體進行說明。其中，將碳化矽基板50之表面中的形成磊晶層的面稱為主面。因此，於本實施形態中，碳化矽基板50的主面，係Si面或C面，且為圓形的面。此外，將與該主面相反側的面稱為背面。碳化矽基板50，係以背面外周部(圓形輪廓近旁的部分)接觸於支撐面22的方式而被載置。因此，支撐面22的內徑(由支撐面22的徑向內側的輪廓構成之圓的直徑)，係較作為對象的碳化矽基板50的直徑(例如，2吋、3吋、4吋、6吋等)小。此外，支撐面22的外徑(由支撐面22的徑向外側的輪廓構成之圓的直徑)，係較作為對象的碳化矽基板50的直徑大。藉由該構成，支撐面22支撐碳化矽基板50。
此外，限制面21係以自支撐面22的徑向外側的端部朝上方垂直地延伸的方式形成之圓弧狀的面。當載置於支撐面22上的碳化矽基板50朝徑向(沿主面或背面的方向)移動時，藉由限制面21抵定該碳化矽基板50，以限制碳化矽基板50的移動。
凹部側面31係以自支撐面22的徑向內側的端部朝下方垂直地延伸的方式形成之圓弧狀的面。因此，形成有凹部側面31的位置，係較限制面21更靠徑向內側。此外，凹部側面31的高度(基板厚度方向的長度)，係較限制面21的高度低，也可與限制面21的高度相同，或者也可較限制面21的高度高。
凹部底面32係以自凹部側面31之下側的端部水平延伸的方式形成之圓形的面。因此，凹部底面32的直徑，係與支撐面22的內徑相同。再者，限制面21及凹部側面31的至少一者，也可相對於基板厚度方向傾斜。該情況下，例如，凹部底面32的直徑，係較支撐面22的內徑小。此外，於本實施形態中，將自凹部底面32至支撐面22的長度(詳細為自凹部底面32至包含支撐面22的虛擬平面的長度)稱為凹部深度，尤其將凹部底面32的徑向中央的凹部深度(圖3中以符號L顯示的長度)稱為中央凹部深度。再者，於本實施形態中，凹部深度係於凹部30全體皆相同的長度，但也可根據位置而不同。
如圖2所示，於本實施形態中，限制面21、支撐面22、凹部側面31、凹部底面32，皆整體被以碳化鉭層構成。
其次，參照圖3至圖5，對使用本實施形態的承載盤10形成磊晶層的功效進行說明。
如上述，於碳化矽基板50上形成磊晶層時，因主面與背面的熱膨脹率的差而有可能產生朝背面側隆起狀的翹曲。於圖3下側的圖中顯示有碳化矽基板50翹曲之狀態的狀況。如圖3所示，本實施形態的凹部30，係被構成為於磊晶層的形成時(例如1500℃至1700℃)(即於碳化矽基板50翹曲的狀態下)，碳化矽基板50的背面不會與凹部底面32接觸的深度。該深度係由隨著碳化矽基板50的直徑而變化的情況推測而得。
在此，碳化矽基板背面的粗糙度被認為與凹部深度有關。例如，於凹部深度淺的情況下，由於碳化矽基板的背面與凹部底面的距離變近，因而容易傳遞熱，進而容易造成背面的粗糙。
為了驗證這點，進行了以下的實驗：以白色微分干涉差顯微鏡(DIC)對藉由凹部深度為30μm的承載盤及凹部深度為200μm的承載盤(凹部的表面皆為石墨)而於2吋之碳化矽基板上形成磊晶層之後的背面進行測量。圖4為利用該實驗獲得的顯微鏡照片及背面的算術表面粗糙度Ra(以下稱為表面粗糙度)。如圖4所示，於使用凹部深度為30μm的承載盤之情況下，表面粗糙度為10.25nm，於使用凹部深度為200μm的承載盤之情況下，表面粗糙度為0.97nm，從而驗證了上述考察正確。
圖5為顯示對凹部的表面為碳化鉭之承載盤的凹部深度、與使用2吋之碳化矽基板時的氮摻雜量(載子濃度)的變差係數(以平均值除標準偏差的值)的關係進行驗證而得之實驗結果的圖。如圖5所示，凹部深度為100μm及200μm時，氮摻雜量的變差係數為3.8(即、4以下)而相同，凹部深度為400μm的情況，氮摻雜量的變差係數增大(氮摻雜量變得不均勻)。因此，較佳為，承載盤的凹部深度係自100μm至200μm。再者，於凹部深度不同的情況下，考慮到中央凹部長度對碳化矽基板50的背面影響最大，因此該情況下較佳為，中央凹部長度為100μm以上且200μm以下。
此外，與石墨比較，碳化鉭的熱輻射率低。於本實施形態中，由於凹部側面31及凹部底面32係由碳化鉭構成，因此，承載盤10的熱不易傳遞至碳化矽基板50的背面。因此，伴隨加熱的碳化矽基板50的背面粗糙更難產生。因此，使用本實施形態的承載盤10形成磊晶層之碳化矽基板50的背面，係較使用凹部表面為石墨之承載盤的情況，不易產生粗糙。因此，於本實施形態中，碳化矽基板50之背面的表面粗糙度被推測為1nm(詳細為0.97nm)以下。此外，碳化矽基板50背面的表面粗糙度被推測為0.4nm以上。再者，這些表面粗糙度，係藉由將磊晶層的形成速度設定為10μm/h且進行1小時形成處理，而於主面形成厚度為10μm的磊晶層的情況之背面的表面粗糙度。此外，例如形成厚度厚的磊晶層的情況，由於處理時間變長，因此碳化矽基板50背面的粗糙度容易行進。因此，能更有效地利用碳化矽基板50的背面不易粗糙的功效。
其次，對上述實施形態的變形例進行說明。上述實施形態中說明的承載盤10的形狀(尤其是凹部30的形狀)或組成，只要是於磊晶層的形成時碳化矽基板50的背面不與凹部底面32接觸的形狀，也可設為與上述實施形態不同的形狀。
圖6為第1變形例之承載盤10的基板載置部14的側面剖視圖。第1變形例的承載盤10，係於上層部20的上端整體皆形成有倒角部23。藉此，於載置碳化矽基板50時，可防止因承載盤10與碳化矽基板50的接觸而引起的碳化矽基板50的損傷、或容易載置碳化矽基板50。
此外，本實施形態的承載盤10係具有限制面21，該限制面21係形成於支撐面22的徑向外側且限制碳化矽基板50的徑向移動。支撐面22及限制面21的至少表面係碳化鉭。
藉此，於支撐面22及限制面21例如為石墨的情況下，雖然磊晶層的形成時產生於支撐面22及限制面21的SiC有可能附著在碳化矽基板50上，但藉由設為碳化鉭，可防止SiC的附著。此外，於以SiC構成凹部30的表面的情況下，由於磊晶層的形成時該SiC昇華，因此承載盤的壽命有可能變短。與此相對，本實施形態的構成，除了凹部30的表面，支撐面22及限制面21也為碳化鉭，因此可於設定碳化矽基板50的部分即基板載置部14的大致整體防止昇華。藉此，可增加承載盤10的壽命。
此外，本實施形態的承載盤10，係藉由在基材(石墨基材)的至少一部分被覆不同組成的層(本實施形態中為SiC及碳化鉭)而構成。凹部30係於基材的凹形狀部分形成有碳化鉭層的構成。
藉此，可減少承載盤10的成本，並且可選擇性地於特定的部位發揮同樣的功效(碳化矽基板50的表面粗糙的抑制)。
此外，於本實施形態的承載盤10中，基材係石墨，且至少在承載盤上面11及承載盤10側面形成有SiC層。
藉此，以碳化鉭層被覆承載盤10整體之情況，會在碳化鉭層上析出SiC，其析出的SiC有可能附著在碳化矽基板50上。該點誠如上述，藉由將承載盤上面11及承載盤側面12的被覆設為SiC層，由於SiC在碳化鉭上不易被析出，因而能防止碳化矽基板的污染。
以上，對本發明的較佳實施形態進行了說明，但上述構成例如也可變更如下。
於上述實施形態中，雖然使用了石墨製的基材，但也可使用其他原材料的基材。此外，也可於基材上被覆SiC層及碳化鉭層以外的組成的層。此外，也可省略基材。此外，只要凹部30的表面為碳化鉭，其他部分的表面也可為其他原材料。
上述實施形態中說明之凹部的形狀係例示而已，也可為不同的形狀。此外，於上述實施形態中，由於支撐面22係圓環狀，因此支撐碳化矽基板50的外周部整體(360度全支撐)。也可取代此，而為僅支撐碳化矽基板50的外周部的一部分的構成(例如，每隔既定的角度形成支撐面22的構成)。
10‧‧‧承載盤
14‧‧‧基板載置部
20‧‧‧上層部
21‧‧‧限制面
22‧‧‧支撐面
30‧‧‧凹部
31‧‧‧凹部側面
32‧‧‧凹部底面
50‧‧‧碳化矽基板
圖1為本發明之一實施形態的承載盤之立體圖。 　　圖2為承載盤之基板載置部的側面剖視圖。 　　圖3為顯示碳化矽基板之載置時及磊晶層形成時的狀況之剖視圖。 　　圖4為以凹部深度30μm的情況及200μm的情況比較磊晶層形成後的碳化矽基板之背面的顯微鏡照片之圖。 　　圖5為以凹部深度100μm、200μm、400μm的情況比較磊晶層形成後的載子濃度分佈之變差係數的圖。 　　圖6為第1變形例之承載盤的基板載置部之側面剖視圖。

Claims (8)

  1. 一種承載盤，係於碳化矽基板的主面形成磊晶層時用以載置該碳化矽基板者，其特徵在於： 　　該承載盤形成有支撐面及凹部， 　　該支撐面係形成於較承載盤上面低的位置，且支撐上述碳化矽基板的背面的外周部； 　　該凹部係形成於較上述支撐面更靠徑向的內側，至少表面由碳化鉭構成，且深度係於上述磊晶層的形成處理時不會與上述碳化矽基板的背面接觸的深度。
  2. 如請求項1的承載盤，其中，上述凹部全體係深度相同。
  3. 如請求項2的承載盤，其中，上述凹部係由平行於基板厚度方向的表面即凹部側面、及垂直於基板厚度方向的表面即凹部底面構成。
  4. 如請求項1的承載盤，其中，具有限制面，其係形成於上述支撐面的徑向外側且限制上述碳化矽基板的徑向移動，且 　　上述支撐面及上述限制面的至少表面係碳化鉭。
  5. 如請求項1的承載盤，其中，上述承載盤係藉由在基材的至少一部分被覆不同組成的層而構成， 　　上述凹部係於基材的凹形狀部分形成有碳化鉭層之構成。
  6. 如請求項5的承載盤，其中，上述基材係石墨，且至少於承載盤上面及承載盤側面形成有SiC層。
  7. 一種磊晶基板的製造方法，該磊晶基板係於碳化矽基板的主面形成有磊晶層者，該磊晶基板的製造方法的特徵在於包含： 　　磊晶層形成步驟，於該磊晶層形成步驟中，使上述碳化矽基板載置於承載盤上，且藉由化學蒸鍍法形成磊晶層； 　　於上述磊晶層形成步驟中使用的上述承載盤上形成有支撐面及凹部， 　　上述支撐面係形成於較承載盤上面低的位置，且支撐上述碳化矽基板的背面的外周部， 　　上述凹部係形成於較上述支撐面更靠徑向內側，至少表面由碳化鉭構成，且深度係在上述磊晶層形成步驟的處理時不會與上述碳化矽基板接觸的深度。
  8. 一種磊晶基板，係於碳化矽基板的主面形成有磊晶層者，其特徵在於： 　　其背面的表面粗糙度為1nm以下，且磊晶層中的載子濃度的變差係數為4以下。
TW107116144A 2017-05-12 2018-05-11 承載盤、磊晶基板的製造方法及磊晶基板 TW201907050A (zh)

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