WO2018207942A1 - サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 - Google Patents
サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 Download PDFInfo
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- WO2018207942A1 WO2018207942A1 PCT/JP2018/018437 JP2018018437W WO2018207942A1 WO 2018207942 A1 WO2018207942 A1 WO 2018207942A1 JP 2018018437 W JP2018018437 W JP 2018018437W WO 2018207942 A1 WO2018207942 A1 WO 2018207942A1
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- susceptor
- sic substrate
- substrate
- epitaxial layer
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/063—Heating of the substrate
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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Definitions
- the present invention mainly relates to a susceptor used when an epitaxial layer is formed on a SiC substrate.
- an epitaxial layer is formed on a main surface of a SiC substrate by chemical vapor deposition while the SiC substrate is supported on a susceptor.
- the epitaxial layer may be warped so as to swell toward the back side due to the difference in thermal expansion coefficient between the main surface and the back side.
- Patent Document 1 discloses a susceptor used for epitaxial growth of a SiC substrate.
- the surface of this susceptor is coated with TaC.
- the susceptor has a curved surface that is curved in accordance with the warp of the SiC substrate when the epitaxial layer is formed. With this configuration, the tensile stress applied to the TaC film during the formation of the epitaxial layer can be reduced, so that the TaC film can be hardly peeled off.
- Patent Document 2 discloses a method of forming an epitaxial layer on a SiC substrate using a susceptor having a structure in which TaC is coated on carbon.
- the SiC film formed on the surface of the susceptor is attached to the plate by placing the plate on the susceptor and heating the susceptor to a high temperature. With this configuration, it is possible to prevent SiC adhering to the susceptor from becoming a particle source.
- Patent Document 3 discloses a substrate holder used when a compound semiconductor film is formed on a nitride-based semiconductor substrate.
- anisotropic warping may occur.
- the substrate holder is formed with an asymmetric recess that matches the anisotropic warpage.
- the recess is configured not to contact the nitride-based semiconductor substrate in a state where warpage has occurred. With this configuration, the in-plane temperature distribution of the nitride-based semiconductor substrate can be made uniform.
- JP 2017-22320 Japanese Patent Laying-Open No. 2015-204434 JP 2010-80614 A
- the step of forming the epitaxial layer on the SiC substrate it is necessary to heat to a high temperature, so that SiC sublimation occurs from the back surface of the SiC substrate, and the back surface of the SiC substrate may be roughened.
- the back surface of the SiC substrate is rough, it becomes difficult to adsorb the back surface of the SiC substrate in a device manufacturing process to be performed later. Therefore, a process (mirror finishing or the like) for eliminating the roughness of the back surface of the SiC substrate is required.
- Patent Document 1 the epitaxial layer is formed in a state where the back surface of the SiC substrate is in contact with the TaC film. Even in this case, since the heat of the susceptor is directly transferred, the back surface of the SiC substrate is roughened.
- Patent Document 2 the back surface of the SiC substrate floats when the SiC substrate is placed on the susceptor, but does not describe contact / non-contact when the SiC substrate is warped.
- Patent Document 3 is a technique that targets not a SiC substrate but a nitride-based semiconductor substrate. Further, Patent Document 3 aims to make the in-plane temperature distribution of the nitride-based semiconductor substrate uniform, and it is possible to prevent roughening of the back surface of the SiC substrate only by making the in-plane temperature distribution uniform. Can not.
- the present invention has been made in view of the above circumstances, and a main object of the present invention is to provide a susceptor used for epitaxial growth of a SiC substrate in which the back surface of the SiC substrate is hardly roughened.
- a susceptor having the following configuration. That is, the susceptor is a member for placing the SiC substrate when forming an epitaxial layer on the main surface of the SiC substrate.
- the susceptor has a support surface and a recess.
- the support surface is formed at a position lower than the upper surface of the susceptor and supports the outer peripheral portion of the back surface of the SiC substrate.
- the recess is formed on the inner side in the radial direction from the support surface, at least the surface is made of tantalum carbide, and has a depth that does not contact the back surface of the SiC substrate during the formation process of the epitaxial layer. .
- the processing time becomes long, so that the roughness of the back surface of the SiC substrate easily proceeds (the difference in roughness of the back surface when compared with graphite becomes more remarkable). . Therefore, the effect of the present invention that the back surface of the SiC substrate is hardly roughened can be more effectively utilized.
- the recesses have the same depth throughout.
- the recess preferably includes a recess side surface that is a plane parallel to the substrate thickness direction and a recess bottom surface that is a plane perpendicular to the substrate thickness direction.
- Such a shape can be used to prevent contact between the SiC substrate and the susceptor during the formation of the epitaxial layer. Therefore, an optimally shaped susceptor can be realized according to the diameter, thickness, processing time, susceptor composition, and the like of the SiC substrate.
- the above susceptor preferably has the following configuration. That is, the susceptor is formed on the outer side in the radial direction of the support surface, and has a regulating surface that regulates the movement of the SiC substrate in the radial direction. At least the surfaces of the support surface and the regulation surface are tantalum carbide.
- the supporting surface and the regulating surface are, for example, graphite
- SiC generated on the supporting surface and the regulating surface at the time of forming the epitaxial layer may adhere to the SiC substrate. Can be prevented.
- the surface of the recess is made of SiC
- the SiC sublimates when the epitaxial layer is formed, so that the life of the susceptor may be shortened.
- the support surface and the regulation surface are tantalum carbide in addition to the surface of the recess, sublimation can be prevented in substantially the entire portion where the SiC substrate is set. Thereby, the lifetime of a susceptor can be lengthened.
- the above susceptor preferably has the following configuration. That is, the susceptor is configured by coating at least a part of a base material with layers having different compositions.
- the said recessed part is comprised by forming a tantalum carbide layer in the recessed shape part of a base material.
- the base material is graphite, and an SiC layer is formed at least on the susceptor upper surface and the susceptor side surface.
- SiC when the susceptor is entirely covered with the tantalum carbide layer, SiC may be deposited on the tantalum carbide layer, and the deposited SiC may adhere to the SiC substrate.
- SiC by covering the upper surface of the susceptor and the side surface of the susceptor with the SiC layer as described above, it is difficult for SiC to be deposited on the tantalum carbide, so that the contamination of the SiC substrate can be prevented.
- this manufacturing method includes an epitaxial layer forming step of placing the SiC substrate on a susceptor and forming an epitaxial layer by chemical vapor deposition.
- the susceptor used in the epitaxial layer forming step has a support surface and a recess.
- the support surface is formed at a position lower than the upper surface of the susceptor and supports the outer peripheral portion of the back surface of the SiC substrate.
- the concave portion is formed on the inner side in the radial direction from the support surface, at least the surface is made of tantalum carbide, and has a depth that does not contact the SiC substrate during the processing in the epitaxial layer forming step. .
- an epitaxial substrate having the following configuration is provided. That is, this epitaxial substrate is obtained by forming an epitaxial layer on the main surface of the SiC substrate.
- the surface roughness of the back surface of the epitaxial substrate is 1 nm or less, and the coefficient of variation of the carrier concentration in the epitaxial layer is 4 or less.
- the perspective view of the susceptor which concerns on one Embodiment of this invention Side surface sectional drawing of the board
- Sectional drawing which shows the mode at the time of mounting of an SiC substrate and formation of an epitaxial layer.
- the figure which compares the microscope picture of the back surface of the SiC substrate after epitaxial layer formation with the case where a recessed part depth is 30 micrometers and the case of 200 micrometers.
- FIG. 1 is a perspective view of a susceptor 10 according to an embodiment of the present invention.
- FIG. 2 is a side sectional view of the substrate platform 14 of the susceptor 10.
- the susceptor 10 is a member for placing the SiC substrate 50 when forming an epitaxial layer on the SiC substrate 50.
- the SiC substrate 50 is placed on the susceptor 10 and the susceptor 10 is accommodated in a heating container to perform chemical vapor deposition (CVD).
- CVD chemical vapor deposition
- an epitaxial layer is formed in a SiC substrate by introducing source gas etc. in a high temperature environment.
- the gas introduced into the heating vessel for example, SiH 4 as the Si raw material, C 3 H 8 and C 2 H 2 as the C raw material, N 2 (n-type) for the dopant, (CH 3 ) ) 3 Al (p-type), and HCl, SiH 2 Cl 2 , SiHCl 3 , SiCl 4 , and CH 3 SiCl for the purpose of improving the growth rate.
- the susceptor 10 may be rotated about the central axis as a rotation axis.
- SiC substrate 50 on which the epitaxial layer is formed as described above is referred to as an epitaxial substrate.
- the substrate after the epitaxial layer is formed (immediately after) and before the next step (the next step of mechanically or chemically processing the SiC substrate 50) is performed.
- the next step is, for example, a step of adjusting the thickness of the SiC substrate 50 and a step of performing mirror finishing on the back surface of the SiC substrate 50.
- These steps may be performed by mechanical processing such as polishing and grinding, or may be performed by Si vapor pressure etching that etches the surface of the SiC substrate 50 by heating under Si vapor pressure.
- the susceptor 10 has a disc shape (columnar shape), and one of the two circular surfaces is a susceptor upper surface 11 and the other is a susceptor bottom surface 13.
- a curved surface (arc surface) connecting the susceptor upper surface 11 and the susceptor bottom surface 13 is the susceptor side surface 12.
- a plurality of substrate mounting portions 14 are formed on the susceptor upper surface 11 of the susceptor 10.
- the susceptor 10 is described from the viewpoint of composition, as shown in FIG. 2, it is a configuration in which a TaC layer or a SiC layer is formed on a graphite substrate.
- the above-described susceptor top surface 11, susceptor side surface 12, and susceptor bottom surface 13 are composed of SiC layers.
- the surface (details will be described later) of the substrate platform 14 is composed of a TaC layer.
- the substrate mounting part 14 is a part that places the SiC substrate 50 and restricts the movement of the SiC substrate 50.
- the substrate platform 14 has a two-stage structure including an upper stage part 20 and a concave part 30.
- the upper stage 20 is formed with a regulation surface 21 as a side surface and a support surface 22 as a bottom surface.
- the recess 30 has a recess side surface 31 as a side surface and a recess bottom surface 32 as a bottom surface.
- the support surface 22 is an annular surface and supports the SiC substrate 50. This will be specifically described below.
- the surface on which the epitaxial layer is formed is referred to as a main surface. Therefore, in this embodiment, the main surface of the SiC substrate 50 is a Si surface or a C surface, and is a circular surface. A surface opposite to the main surface is referred to as a back surface.
- the SiC substrate 50 is placed so that the outer peripheral portion (the portion near the circular contour) on the back surface is in contact with the support surface 22.
- the inner diameter of the support surface 22 (the diameter of a circle formed by the radially inner contour of the support surface 22) is the diameter of the target SiC substrate 50 (for example, 2 inches, 3 inches, 4 inches, 6 inches, etc.). Smaller than).
- the outer diameter of support surface 22 (the diameter of a circle formed by the contour on the outer side in the radial direction of support surface 22) is larger than the diameter of target SiC substrate 50. With this configuration, support surface 22 supports SiC substrate 50.
- the regulating surface 21 is an arc-shaped surface formed so as to extend vertically upward from the radially outer end of the support surface 22.
- the restricting surface 21 restricts the movement of the SiC substrate 50 by hitting the SiC substrate 50 when the SiC substrate 50 placed on the support surface 22 moves in the radial direction (direction along the main surface or the back surface). .
- the concave side surface 31 is an arc-shaped surface formed to extend vertically downward from the radially inner end of the support surface 22. Therefore, the position where the concave side surface 31 is formed is on the radially inner side than the regulating surface 21. Further, the height of the recess side surface 31 (the length in the substrate thickness direction) may be lower than the height of the regulating surface 21, the same as the height of the regulating surface 21, or the height of the regulating surface 21. It may be higher.
- the recess bottom surface 32 is a circular surface formed to extend horizontally from the lower end of the recess side surface 31. Therefore, the diameter of the recess bottom surface 32 is the same as the inner diameter of the support surface 22. Note that at least one of the regulation surface 21 and the recess side surface 31 may be inclined with respect to the substrate thickness direction. In this case, for example, the diameter of the recess bottom surface 32 is smaller than the inner diameter of the support surface 22. Further, in the present embodiment, the length from the recess bottom surface 32 to the support surface 22 (specifically, the length from the recess bottom surface 32 to the virtual plane including the support surface 22) is referred to as the recess depth.
- the depth of the recess at the center in the radial direction (the length indicated by the symbol L in FIG. 3) is referred to as the center recess depth.
- the depth of the concave portion is the same length throughout the concave portion 30, but may be different depending on the position.
- all of the regulation surface 21, the support surface 22, the concave side surface 31, and the concave bottom surface 32 are formed of a tantalum carbide layer.
- the recess 30 of the present embodiment has a back surface of the SiC substrate 50 and a bottom surface 32 of the recess when the epitaxial layer is formed (for example, 1500 ° C. to 1700 ° C.) (that is, when the SiC substrate 50 is warped). It is the depth which does not touch. It is estimated that this depth varies depending on the diameter of the SiC substrate 50.
- the roughness of the back surface of the SiC substrate is considered to be related to the depth of the recess. For example, when the depth of the concave portion is shallow, the distance between the back surface of the SiC substrate and the bottom surface of the concave portion is short, so that heat is easily transmitted and the back surface is likely to be rough.
- FIG. 4 is a micrograph obtained in this experiment and an arithmetic surface roughness Ra (hereinafter, surface roughness) of the back surface. As shown in FIG.
- the surface roughness is 10.25 nm, and when a susceptor having a recess depth of 200 ⁇ m is used, the surface roughness is 0.97 nm. It was verified that the above consideration was correct.
- FIG. 5 shows the recess depth of a susceptor whose surface of the recess is tantalum carbide, and the coefficient of variation (the value obtained by dividing the standard deviation by the average value) of the nitrogen doping amount (carrier concentration) when a 2-inch SiC substrate is used. It is a figure which shows the result of the experiment which verified this relationship. As shown in FIG. 5, when the recess depth is 100 ⁇ m and 200 ⁇ m, the variation coefficient of the nitrogen doping amount is 3.8 (that is, 4 or less), and when the recess depth is 400 ⁇ m, the variation coefficient of the nitrogen doping amount is the same. Becomes larger (the amount of nitrogen doping becomes uneven).
- the susceptor preferably has a recess depth of 100 ⁇ m to 200 ⁇ m. If the depth of the recess is not uniform, the central recess length is considered to have the greatest influence on the back surface of SiC substrate 50. In this case, the center recess length may be 100 ⁇ m or more and 200 ⁇ m or less. preferable.
- tantalum carbide has a lower thermal emissivity than graphite.
- the recess side surface 31 and the recess bottom surface 32 are made of tantalum carbide, the heat of the susceptor 10 is hardly transmitted to the back surface of the SiC substrate 50. Therefore, roughening of the back surface of SiC substrate 50 accompanying heating is less likely to occur. Therefore, the back surface of the SiC substrate 50 on which the epitaxial layer is formed using the susceptor 10 of the present embodiment is less likely to be rough than when the surface of the recess is a susceptor made of graphite.
- the surface roughness of the back surface of the SiC substrate 50 is 1 nm (specifically 0.97 nm) or less. Moreover, it is estimated that the surface roughness of the back surface of the SiC substrate 50 is 0.4 nm or more. In addition, these surface roughness is the surface roughness of the back surface when an epitaxial layer having a thickness of 10 ⁇ m is formed on the main surface by performing the formation process for 1 hour at an epitaxial layer formation rate of 10 ⁇ m / h. . For example, when an epitaxial layer having a large thickness is formed, the processing time becomes long, so that the back surface of the SiC substrate 50 is easily roughened. Therefore, the effect that the back surface of SiC substrate 50 is not easily roughened can be utilized more effectively.
- the shape (particularly the shape of the recess 30) or the composition of the susceptor 10 described in the above embodiment is different from the above embodiment as long as the back surface of the SiC substrate 50 does not contact the bottom surface 32 of the recess when the epitaxial layer is formed. You can also
- FIG. 6 is a side sectional view of the substrate platform 14 of the susceptor 10 according to the first modification.
- a chamfered portion 23 is formed over the entire upper end of the upper step portion 20.
- the susceptor 10 of the present embodiment is formed on the outer side of the support surface 22 in the radial direction, and has a regulating surface 21 that regulates the movement of the SiC substrate 50 in the radial direction. At least the surfaces of the support surface 22 and the regulation surface 21 are tantalum carbide.
- the supporting surface 22 and the regulating surface 21 are, for example, graphite
- SiC generated on the supporting surface 22 and the regulating surface 21 during the formation of the epitaxial layer may adhere to the SiC substrate 50.
- the adhesion of SiC can be prevented.
- the surface of the recess 30 is made of SiC
- the SiC sublimates during the formation of the epitaxial layer, so that the life of the susceptor may be shortened.
- the support surface 22 and the regulation surface 21 are also tantalum carbide in addition to the surface of the recess 30, substantially the entire substrate mounting portion 14 which is a portion on which the SiC substrate 50 is set. Can prevent sublimation. Thereby, the lifetime of the susceptor 10 can be extended.
- the susceptor 10 of the present embodiment is configured by coating at least a part of a base material (graphite base material) with layers having different compositions (SiC and tantalum carbide in the present embodiment).
- the concave portion 30 has a configuration in which a tantalum carbide layer is formed on the concave portion of the base material.
- the base material is graphite
- an SiC layer is formed at least on the susceptor upper surface 11 and the susceptor 10 side surfaces.
- SiC when the entire susceptor 10 is covered with a tantalum carbide layer, SiC may be deposited on the tantalum carbide, and the deposited SiC may adhere to the SiC substrate 50.
- the susceptor upper surface 11 and the susceptor side surface 12 are covered with the SiC layer, so that SiC is not easily deposited on the tantalum carbide, so that the SiC substrate can be prevented from being soiled.
- a graphite base material is used, but a base material of another material may be used.
- the base material may be coated with a layer having a composition other than the SiC layer and the tantalum carbide layer.
- the surface of the recessed part 30 is a tantalum carbide, the surface of another part may be another raw material.
- the shape of the recess described in the above embodiment is an example, and may be a different shape.
- the support surface 22 is annular
- a configuration in which only a part of the outer peripheral portion of the SiC substrate 50 is supported (for example, a configuration in which the support surface 22 is formed at every predetermined angle) may be employed.
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Abstract
Description
14 基板載置部
20 上段部
21 規制面
22 支持面
30 凹部
31 凹部側面
32 凹部底面
50 SiC基板
Claims (8)
- SiC基板の主面にエピタキシャル層を形成する際に当該SiC基板を載せるサセプタにおいて、
サセプタ上面よりも低い位置に形成され、前記SiC基板の裏面の外周部を支持する支持面と、
前記支持面よりも径方向の内側に形成されており、少なくとも表面が炭化タンタルで構成されており、前記エピタキシャル層の形成処理時において前記SiC基板の裏面と接触しない深さの凹部と、
が形成されていることを特徴とするサセプタ。 - 請求項1に記載のサセプタであって、
前記凹部は全体にわたって深さが同じであることを特徴とするサセプタ。 - 請求項2に記載のサセプタであって、
前記凹部には、基板厚み方向に平行な面である凹部側面と、基板厚み方向に垂直な面である凹部底面と、で構成されていることを特徴とするサセプタ。 - 請求項1に記載のサセプタであって、
前記支持面の径方向の外側に形成されており、前記SiC基板の径方向の移動を規制する規制面を有しており、
前記支持面及び前記規制面の少なくとも表面が炭化タンタルであることを特徴とするサセプタ。 - 請求項1に記載のサセプタであって、
基材の少なくとも一部に異なる組成の層を被覆することで構成されており、
前記凹部は、基材の凹形状部分に炭化タンタル層を形成した構成であることを特徴とするサセプタ。 - 請求項5に記載のサセプタであって、
前記基材が黒鉛であり、少なくともサセプタ上面とサセプタ側面にSiC層が形成されていることを特徴とするサセプタ。 - SiC基板の主面にエピタキシャル層が形成されたエピタキシャル基板の製造方法において、
サセプタに前記SiC基板を載せて化学蒸着法によりエピタキシャル層を形成するエピタキシャル層形成工程を含み、
前記エピタキシャル層形成工程で用いる前記サセプタには、
サセプタ上面よりも低い位置に形成され、前記SiC基板の裏面の外周部を支持する支持面と、
前記支持面よりも径方向の内側に形成されており、少なくとも表面が炭化タンタルで構成されており、前記エピタキシャル層形成工程での処理時において前記SiC基板と接触しない深さの凹部と、
が形成されていることを特徴とするエピタキシャル基板の製造方法。 - SiC基板の主面にエピタキシャル層が形成されたエピタキシャル基板であって、
裏面の表面粗さ(Ra)が1nm以下で、エピタキシャル層中のキャリア濃度の変動係数が4以下であることを特徴とするエピタキシャル基板。
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US16/611,903 US20210040643A1 (en) | 2017-05-12 | 2018-05-11 | Susceptor, method for producing epitaxial substrate, and epitaxial substrate |
KR1020197036407A KR20200003194A (ko) | 2017-05-12 | 2018-05-11 | 서셉터, 애피택셜 기판의 제조 방법, 및 애피택셜 기판 |
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