SG10201510239RA - Reducing backside deposition at wafer edge - Google Patents
Reducing backside deposition at wafer edgeInfo
- Publication number
- SG10201510239RA SG10201510239RA SG10201510239RA SG10201510239RA SG10201510239RA SG 10201510239R A SG10201510239R A SG 10201510239RA SG 10201510239R A SG10201510239R A SG 10201510239RA SG 10201510239R A SG10201510239R A SG 10201510239RA SG 10201510239R A SG10201510239R A SG 10201510239RA
- Authority
- SG
- Singapore
- Prior art keywords
- wafer edge
- backside deposition
- reducing backside
- reducing
- deposition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/578,126 US10648079B2 (en) | 2014-12-19 | 2014-12-19 | Reducing backside deposition at wafer edge |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201510239RA true SG10201510239RA (en) | 2016-07-28 |
Family
ID=56128756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201510239RA SG10201510239RA (en) | 2014-12-19 | 2015-12-14 | Reducing backside deposition at wafer edge |
Country Status (5)
Country | Link |
---|---|
US (1) | US10648079B2 (en) |
KR (2) | KR102401894B1 (en) |
CN (2) | CN110060941B (en) |
SG (1) | SG10201510239RA (en) |
TW (2) | TWI673387B (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9870917B2 (en) * | 2015-12-17 | 2018-01-16 | Lam Research Corporation | Variable temperature hardware and methods for reduction of wafer backside deposition |
US9698042B1 (en) | 2016-07-22 | 2017-07-04 | Lam Research Corporation | Wafer centering in pocket to improve azimuthal thickness uniformity at wafer edge |
US10109478B2 (en) * | 2016-09-09 | 2018-10-23 | Lam Research Corporation | Systems and methods for UV-based suppression of plasma instability |
KR20230141940A (en) * | 2016-10-12 | 2023-10-10 | 램 리써치 코포레이션 | Pad raising mechanism in wafer positioning pedestal for semiconductor processing |
US9892956B1 (en) * | 2016-10-12 | 2018-02-13 | Lam Research Corporation | Wafer positioning pedestal for semiconductor processing |
US10923385B2 (en) | 2016-11-03 | 2021-02-16 | Lam Research Corporation | Carrier plate for use in plasma processing systems |
US20180138074A1 (en) * | 2016-11-11 | 2018-05-17 | Samsung Electronics Co., Ltd. | Carrier ring and chemical vapor deposition apparatus including the same |
KR20190085148A (en) * | 2016-12-07 | 2019-07-17 | 티이엘 에프에스아이, 인코포레이티드 | Wafer edge lift pins for manufacturing semiconductor devices |
US11702748B2 (en) * | 2017-03-03 | 2023-07-18 | Lam Research Corporation | Wafer level uniformity control in remote plasma film deposition |
US10851457B2 (en) | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
TWI768849B (en) | 2017-10-27 | 2022-06-21 | 美商應用材料股份有限公司 | Single wafer processing environments with spatial separation |
CN109003884A (en) * | 2018-07-04 | 2018-12-14 | 上海晶盟硅材料有限公司 | Preparation method, epitaxial wafer and the semiconductor devices of epitaxial wafer without back side silicon single crystal |
JP7023826B2 (en) * | 2018-12-07 | 2022-02-22 | 株式会社ニューフレアテクノロジー | Continuous film formation method, continuous film formation equipment, susceptor unit, and spacer set used for susceptor unit. |
JP6999614B2 (en) * | 2019-07-26 | 2022-01-18 | 株式会社バルカー | Support member |
WO2021034508A1 (en) | 2019-08-16 | 2021-02-25 | Lam Research Corporation | Spatially tunable deposition to compensate within wafer differential bow |
US20220415624A1 (en) * | 2019-11-26 | 2022-12-29 | Lam Research Corporation | Carrier ring to pedestal kinematic mount for substrate processing tools |
WO2021162865A1 (en) * | 2020-02-11 | 2021-08-19 | Lam Research Corporation | Carrier ring designs for controlling deposition on wafer bevel/edge |
CN113802110A (en) * | 2020-06-13 | 2021-12-17 | 拓荆科技股份有限公司 | Plasma chamber capable of improving cleaning efficiency |
JP7076499B2 (en) * | 2020-06-22 | 2022-05-27 | 株式会社Kokusai Electric | Substrate processing equipment, semiconductor equipment manufacturing methods and programs |
CN115407087A (en) * | 2021-05-26 | 2022-11-29 | 长鑫存储技术有限公司 | Sample fixing mechanism, testing device and sample testing method for nano probe testing |
CN114318305B (en) * | 2021-12-28 | 2023-06-30 | 拓荆科技股份有限公司 | Wafer film deposition device |
CN115478262B (en) * | 2022-09-19 | 2023-11-10 | 拓荆科技股份有限公司 | Wafer bearing structure, thermodynamic atomic layer deposition equipment and film preparation method |
CN118109804A (en) * | 2024-04-19 | 2024-05-31 | 上海陛通半导体能源科技股份有限公司 | Back coating process chamber and chemical vapor deposition equipment |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW254030B (en) * | 1994-03-18 | 1995-08-11 | Anelva Corp | Mechanic escape mechanism for substrate |
JP2713276B2 (en) | 1995-12-07 | 1998-02-16 | 日本電気株式会社 | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method using the same |
US6217663B1 (en) * | 1996-06-21 | 2001-04-17 | Kokusai Electric Co., Ltd. | Substrate processing apparatus and substrate processing method |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
JP3234576B2 (en) * | 1998-10-30 | 2001-12-04 | アプライド マテリアルズ インコーポレイテッド | Wafer support device in semiconductor manufacturing equipment |
US6225223B1 (en) | 1999-08-16 | 2001-05-01 | Taiwan Semiconductor Manufacturing Company | Method to eliminate dishing of copper interconnects |
US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
DE10261362B8 (en) * | 2002-12-30 | 2008-08-28 | Osram Opto Semiconductors Gmbh | Substrate holder |
KR100964775B1 (en) | 2005-10-12 | 2010-06-21 | 파나소닉 주식회사 | Plasma processing apparatus and plasma processing method |
US8221602B2 (en) * | 2006-12-19 | 2012-07-17 | Applied Materials, Inc. | Non-contact process kit |
US8962101B2 (en) * | 2007-08-31 | 2015-02-24 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
JP5395633B2 (en) * | 2009-11-17 | 2014-01-22 | 東京エレクトロン株式会社 | Substrate mounting table for substrate processing apparatus |
JP5638405B2 (en) * | 2010-10-08 | 2014-12-10 | パナソニック株式会社 | Substrate plasma processing method |
US20120227667A1 (en) * | 2011-03-10 | 2012-09-13 | Applied Materials, Inc. | Substrate carrier with multiple emissivity coefficients for thin film processing |
-
2014
- 2014-12-19 US US14/578,126 patent/US10648079B2/en active Active
-
2015
- 2015-12-10 TW TW104141412A patent/TWI673387B/en active
- 2015-12-10 TW TW108124074A patent/TWI688671B/en active
- 2015-12-14 SG SG10201510239RA patent/SG10201510239RA/en unknown
- 2015-12-16 KR KR1020150180225A patent/KR102401894B1/en active IP Right Grant
- 2015-12-21 CN CN201811210262.5A patent/CN110060941B/en active Active
- 2015-12-21 CN CN201510968227.XA patent/CN105719989B/en active Active
-
2022
- 2022-05-20 KR KR1020220061760A patent/KR102514303B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR102514303B1 (en) | 2023-03-24 |
US20160177444A1 (en) | 2016-06-23 |
TWI673387B (en) | 2019-10-01 |
TW201632652A (en) | 2016-09-16 |
CN110060941B (en) | 2023-08-08 |
TW201940735A (en) | 2019-10-16 |
US10648079B2 (en) | 2020-05-12 |
CN105719989A (en) | 2016-06-29 |
TWI688671B (en) | 2020-03-21 |
CN105719989B (en) | 2018-11-16 |
CN110060941A (en) | 2019-07-26 |
KR20220073715A (en) | 2022-06-03 |
KR20160075351A (en) | 2016-06-29 |
KR102401894B1 (en) | 2022-05-24 |
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