KR20230141940A - Pad raising mechanism in wafer positioning pedestal for semiconductor processing - Google Patents

Abstract

An assembly used within a process chamber to deposit films on a wafer. The pedestal assembly includes a pedestal movably mounted on the main frame. The lift pad moves with the pedestal assembly and rests on the pedestal. The lifting mechanism separates the lift pad from the pedestal and includes a hard stop secured to the main frame, a roller attached to the pedestal assembly, a slide movably attached to the pedestal assembly, a pad shaft extending from the lift pad, and a lift interconnected with the slide. It includes a pad bracket, and a lever rotatably attached to the lift pad bracket. When not engaged with the upper hard stop, the lever rests on rollers. As the pedestal assembly moves upward, the lever rotates about the pin as it engages the upper hard stop and roller and separates the lift pad from the pedestal by a process rotation displacement.

Description

Pad raising mechanism of wafer positioning pedestal for semiconductor processing {PAD RAISING MECHANISM IN WAFER POSITIONING PEDESTAL FOR SEMICONDUCTOR PROCESSING}

The present embodiments relate to semiconductor substrate processing methods and equipment tools, and more specifically, to a wafer positioning pedestal for processing wafers of different wafer-to-pedestal orientations.

Improved film uniformity is important in plasma-enhanced chemical vapor deposition (PECVD) technology and plasma-enhanced atomic layer deposition (ALD) technology. Chamber systems implementing PECVD and ALD are associated with hardware signatures that contribute to non-uniform film deposition. For example, a hardware signature may be associated with chamber asymmetry and may be associated with pedestal asymmetry. Additionally, many processes experience azimuthal non-uniformity of various origins. As consumers seek to position dies increasingly closer to the wafer edge, the contribution of this azimuthal non-uniformity value to the overall non-uniformity increases. Despite best efforts to minimize damage and/or non-uniform deposition profiles, conventional PECVD schemes and plasma ALD schemes still require improvement.

Specifically, multi-station modules performing PECVD and ALD feature large, open reactors that may contribute to azimuthal non-uniformities (e.g., NU in the theta direction). For example, some non-uniformities may cause a characteristic film thickness tilt from the center of the reactor toward the spindle transport mechanism. Non-uniformities also exist in single-station modules due to non-uniform physical chamber geometries, including those caused by assembly and component manufacturing tolerances.

Conventionally, deposition non-uniformities were compensated for by physically tilting the showerheads so that they were intentionally oriented non-parallel to the pedestals. It's not a great solution, but it's actually effective. However, further increasing the effectiveness of this scheme is limited, especially as die sizes decrease and the edges of the wafer increasingly become a source of dies.

Processing the wafer in multiple orientations without rotating the hardware signature has been shown to be effective in filtering out azimuthal non-uniformity. The most basic current method in the prior art involves partially processing a wafer, removing the wafer from the process chamber, rotating the wafer in a separate wafer handler, and later removing the wafer for further processing in a new orientation. It includes the step of reinserting. The main advantage of this method is that there is no rotating hardware inside the chamber. However, these prior art solutions have throughput, contamination, and significant additional hardware drawbacks.

Another solution from the prior art is to rotate the entire pedestal during processing. Another solution from the prior art is to rotate the entire pedestal during processing. However, this solution has the negative property of rotating and non-uniformity associated with the pedestal along with the wafer. In that case, the pedestal cannot be neutralized and any irregularities that may appear on the wafer during processing may also have signatures. Additionally, the edge effects of the wafer within the pocket are another type of non-uniformity that rotates right along with the wafer when the entire pedestal is rotated during processing. That is, non-uniformity is not noticeably improved by pedestal rotation (e.g., during ALD oxide deposition). Moreover, in addition to limited performance, rotating an entire pedestal requires the sacrifice of passing RF power through the rotating pedestal. This requires expensive circuitry for impedance matching through a slip ring to transfer sufficient RF power to the plasma. Rotating the entire pedestal also complicates the delivery of gases and fluids, used for cooling, for example. Additionally, heating systems present on the pedestal also require rotation adding cost and complexity.

It is in this context that the present disclosure takes place.

These embodiments relate to providing improved film uniformity during PECVD processes and ALD processes in single-station systems and multi-station systems. Embodiments of the present disclosure provide for rotation of the wafer without rotation of the pedestal, which advantageously filters out both chamber asymmetry and pedestal asymmetry.

Embodiments of the present disclosure include an assembly for use in a process chamber to deposit a film on a wafer. The assembly includes a pedestal assembly having a pedestal movably mounted on the main frame. The assembly includes a lift pad configured to move with the pedestal assembly and rest on a pedestal top surface of the pedestal. The assembly includes a lift pad raising mechanism configured to separate the lift pad from the pedestal, wherein the lift pad raising mechanism includes an upper hard stop, a first roller, a slide, a lift pad bracket, and a lever. Includes. The upper hard stop is fixed relative to the main frame. The first roller is attached to the pedestal assembly. The slide is movably attached to the pedestal assembly. The lift pad bracket is interconnected with the slide and with a pad shaft extending from the lift pad along a central axis. The lever is rotatably attached to the lift pad bracket via a pin, and the lever rests on the first roller in a neutral position unless engaged with the upper hard stop. With respect to the lift pad mechanism, as the pedestal assembly moves upward, the lever rotates about the pin as it engages the first roller and the upper hard stop and is moved away from the pedestal top surface by a process rotation displacement. It is configured to separate the lift pad.

Other embodiments of the present disclosure include an assembly for use within a process chamber to deposit a film on a wafer. The assembly includes a pedestal assembly having a pedestal movably mounted on the main frame. The assembly includes a lift pad configured to move with the pedestal assembly and rest on a pedestal top surface of the pedestal. The assembly includes a lift pad raising mechanism configured to separate the lift pad from the pedestal, wherein the lift pad raising mechanism includes an upper hard stop, a lower stop, a first roller, a second roller, a slide, a lift pad bracket, and a lever. . The upper hard stop is fixed relative to the main frame. The lower hard stop is fixed to the main frame and is located below the upper hard stop relative to the main frame. The first roller is attached to the pedestal assembly. The second roller is attached to the pedestal assembly. The slide is movably attached to the pedestal assembly. The lift pad bracket is interconnected with the slide and with a pad shaft extending from the lift pad along a central axis. The lever is rotatably attached to the lift pad bracket via a pin, and the lever rests on the first roller in a neutral position when not engaging the upper hard stop. Regarding the lift pad raising mechanism, when the pedestal assembly moves upward, the lever rotates about the pin when engaging the first roller and the upper hard stop, and lifts the lift pad from the pedestal top surface by a process rotation displacement. It is designed to separate. Regarding the lift pad raising mechanism, as the pedestal assembly moves downward, the lever rotates about the pin when engaging the second roller and the lower hard stop, and lifts the lift pad from the pedestal by an end-effector access displacement. It is designed to separate.

Other embodiments of the present disclosure include an assembly for use within a process chamber to deposit a film on a wafer. The assembly includes a pedestal assembly including a pedestal movably mounted on the main frame. The assembly includes a lift pad configured to move with the pedestal assembly and rest on a pedestal top surface of the pedestal. The assembly includes a lift pin assembly including a plurality of lift pins extending through a plurality of pedestal shafts configured within the pedestal. The assembly includes a lift pad raising mechanism configured to separate the lift pad from the pedestal, where the lift pad raising mechanism includes an upper hard stop, a first roller, a slide, a lift pad bracket, and a lever. The upper hard stop is fixed relative to the main frame. The first roller is configured to be attached to the pedestal assembly. The slide is configured to be movably attached to the pedestal assembly. The lift pad bracket is configured to interconnect with the slide and interconnect with a pad shaft extending from the lift pad along a central axis. The lever is configured to be rotatably attached to the lift pad bracket via a pin, and the lever rests on the first roller in a neutral position when not engaging the upper hard stop. Regarding the lift pad raising mechanism, when the pedestal assembly moves upward, the lever rotates about the pin when engaging the first roller and the upper hard stop, and lifts the lift pad from the pedestal top surface by a process rotation displacement. It is designed to separate.

In another embodiment, an assembly for use within a process chamber to deposit a film on a wafer is described. The assembly includes means for movably mounting a pedestal assembly including a pedestal to a main frame, means for moving a lift pad configured to rest on a pedestal top surface of the pedestal with the pedestal assembly, and means for disengaging the lift pad from the pedestal. Includes means. The means for disengaging the lift pad from the pedestal may include means for securing the upper hard stop relative to the main frame; means for attaching the first roller to the pedestal assembly; means for movably attaching the slide to the pedestal assembly; means for interconnecting the lift pad brackets with the pad shaft and with the slide, the pad shaft extending from the lift pad along the central axis; and means for rotatably attaching the lever to the lift pad bracket via a pin, the lever being supported on the first roller in a neutral position when not engaging the upper hard stop, wherein the pedestal assembly is positioned upwardly. When moved, the lever is configured to rotate about the pin when the first roller and the upper hard stop engage, and to separate the lift pad from the pedestal top surface by a process rotation displacement.

The assembly further includes embodiments. In one embodiment, the assembly also includes means for movably attaching the pedestal bracket to the main frame, the pedestal bracket being configured to move the pedestal along a central axis relative to the main frame; A central shaft configured to move with the pedestal, comprising means for extending the central shaft from the pedestal along the central axis, the pad shaft being positioned within the central shaft and configured to separate the lift pad from the pedestal. Additionally, in one embodiment, as the lever rotates about the pin, the lift pad bracket and slide together move upward relative to the pedestal assembly such that the lift pad is configured to move upward relative to the pedestal top surface along the central axis. . Additionally, in one embodiment, as the lever rotates about the pin, the lift pad and pedestal assembly moves at a 2:1 ratio. Additionally, in one embodiment there is no relative movement between the lever and the pedestal assembly when the lever is in a neutral position and not engaging the upper hard stop. Additionally, in one embodiment, the means for moving the lift pad further includes means for extending the top surface of the pad from the central axis and means for resting the bottom surface of the pad on the top surface of the pedestal, wherein the top of the pad The surface is configured to support the wafer when placed thereon. Additionally, in one embodiment the diameter of the pad top surface is smaller than the wafer diameter. Additionally, in one embodiment, the diameter of the pad top surface is approximately similar to the wafer diameter. Additionally, in one embodiment the means for moving the lift pad includes rotating the lift pad relative to the pedestal top surface when disengaged from the pedestal between at least a first angular orientation and a second angular orientation. . Additionally, in one embodiment, the means for interconnecting the lift pad brackets to the pad shaft and with the slide includes means for interconnecting the lift pad brackets with a ferroseal assembly interconnected to the pad shaft, and the ferroseal assembly is configured to provide a vacuum seal around the pad shaft while the pad shaft is rotating or not rotating.

In another embodiment, another assembly is described for use within a process chamber to deposit a film on a wafer. The assembly includes means for movably mounting the pedestal assembly including the pedestal to the main frame, means for moving the lift pad with the pedestal assembly and supporting the lift pad on the pedestal top surface of the pedestal, and means for disengaging the lift pad from the pedestal. Includes means for The means for disengaging the lift pad from the pedestal may include means for translating the lever assembly relative to the pedestal assembly when activated; a ferroseal assembly interconnected by a lever assembly, means for the ferroseal assembly to provide a vacuum seal about the pad shaft and means for surrounding the ferroseal assembly about the pad shaft; and means for a yoke assembly to apply an equal force to opposite sides of the ferroseal assembly to offset the moment applied to the ferroseal assembly when the lever assembly is actuated, and for interconnecting the yoke assembly with the lever assembly. Includes means.

The assembly includes different embodiments. In one embodiment, the means for translating the lever assembly includes means for securing the upper hard stop relative to the main frame; means for attaching the first roller to the pedestal assembly; means for movably attaching the slide to the pedestal assembly; means for interconnecting the lift pad bracket to the pad shaft and to the slide, the pad shaft extending from the lift pad along the central axis; and means for rotatably attaching the lever to the lift pad bracket via a pin, the lever being supported on a first roller in a neutral position when not engaging the upper hard stop, the lever being configured to move the pedestal assembly upwardly. means for rotating the lever about the pin when engaging the first roller and the upper hard stop, and separating the lift pad from the pedestal top surface by a process rotation displacement. a first connector arm and a second connector arm located at a second end opposite the first end of the ferroseal assembly, the first connector arm and the second connector arm being equidistant from the pad shaft and opposite sides of the ferroseal assembly. means for attaching the ferroseal assembly to the pad shaft located at the first end of the ferroseal assembly; means for contacting the yoke assembly to the ferroseal assemblies at the first connector arm and the second connector arm, and means for the yoke assembly to apply equal force to the first connector arm and the second connector arm; The arm and the second connector arm are positioned 180 degrees apart with respect to the central axis. In one embodiment, the means for contacting the ferroseal assembly and the yoke assembly include means for rotatably attaching the yoke base, the yoke base rotatable about the pin axis, to the lift pad bracket via a second pin; means for attaching a yoke arm to the yoke base and extending from the yoke base parallel to the pin axis, the yoke arm being offset from the pin by a radial displacement and rotatable about the pin axis; and means for providing a fork end to a yoke arm spaced from the yoke base, the fork end including a second fork extension configured to contact a second connector arm and a first fork extension configured to contact a first connector arm. do. In one embodiment, the means for disengaging the lift pad from the pedestal includes means for attaching a rotation motor to the pad shaft via a belt, both configured to rotate the pad shafts about a central axis; and means for attaching a disk attached to the pad shaft and driven by the belt of the ferroseal assembly to the belt. In one embodiment, the means for movably mounting the pedestal assembly is a pedestal bracket configured to move the pedestal along a central axis relative to the main frame, means for attaching the pedestal bracket to the pedestal and moving the pedestal bracket to the main frame. means for possible attachment; means for extending the central shaft from the pedestal along the central axis, the central shaft configured to move with the pedestal; and means for disengaging the lift pad from the pedestal using the pad shaft, the pad shaft positioned within the central shaft. In one embodiment, the lift pad bracket is movable upwardly and with respect to the pedestal assembly such that when the lever rotates about the pin, the lift pad is configured to move upwardly relative to the pedestal top surface along a central axis. The means for sliding. In another embodiment, there is no relative movement between the lever and the pedestal assembly when the lever is in a neutral position without engaging the upper hard stop. In other embodiments, the diameter of the pad top surface is smaller than the wafer diameter. In another embodiment, the means for disengaging the lift pad from the pedestal includes means for rotating the lift pad relative to the pedestal top surface when disengaged from the pedestal at least between a first angular orientation and a second angular orientation.

These and other advantages will be recognized by those skilled in the art upon reading the entire disclosure and claims.

The embodiments may be best understood by reference to the following description taken in conjunction with the accompanying drawings.
1 illustrates a substrate processing system used to process a wafer, for example, to form films on the wafer.
2 illustrates a top view of a multi-station processing tool, provided with four processing stations, according to one embodiment.
3 shows a schematic diagram of an embodiment of a multi-station processing tool with an inbound load lock and an outbound load lock, according to one embodiment.
4 illustrates a substrate processing system including a lift pad and pedestal configuration where the lift pad is approximately sized to match the wafer, according to one embodiment of the present disclosure.
FIG. 5A is a cross-sectional view of the substrate processing system of FIG. 4, according to one embodiment of the present disclosure.
5B illustrates a lift pad and pedestal configuration where the lift pad is approximately sized to match the wafer and the pedestal and lift pad are at a level to allow lift pin extension for wafer transfer purposes, according to one embodiment of the present disclosure. A cross-sectional view of the substrate processing system of FIG. 4 showing.
FIG. 5C is a diagram of an interface between a lift pad and a pedestal including a pad gap defining minimum contact areas (MCAs), according to one embodiment of the present disclosure.
6 illustrates a substrate processing system including a lift pad and pedestal configuration where the lift pad is smaller than the wafer, according to one embodiment of the present disclosure.
FIG. 7A is a perspective view of the substrate processing system of FIG. 6 including a lift pad and pedestal configuration where the lift pad is smaller than the wafer, according to one embodiment of the present disclosure.
FIG. 7B is a cross-sectional view of the substrate processing system of FIG. 6 including a lift pad and pedestal configuration where the lift pad is smaller than the wafer, according to one embodiment of the present disclosure.
FIG. 7C is a cross-sectional view of the substrate processing system of FIG. 6 including a lift pad and pedestal configuration including a lift pin assembly, where the lift pad is smaller than the wafer, according to one embodiment of the present disclosure.
FIG. 7D is a cross-sectional view of the lift pad to pedestal interface of the substrate processing system of FIG. 6, including a lift pad and pedestal configuration where the lift pad is smaller than the wafer, according to one embodiment of the present disclosure.
FIG. 7E is a perspective view of the top surface of a lift pad in the substrate processing system of FIG. 6 including a lift pad and pedestal configuration according to one embodiment of the present disclosure.
FIG. 7F is a perspective view of the bottom surface of a lift pad of the substrate processing system of FIG. 6, including a lift pad and pedestal configuration, according to one embodiment of the present disclosure.
8 is a flow diagram illustrating a method of operating a process chamber configured to deposit a film on a wafer, according to an embodiment of the present disclosure, the method comprising: rotating the wafer without rotation of the pedestal within the process chamber during processing; provided, and advantageously filters out both chamber asymmetry and pedestal asymmetry.
9A and 9B illustrate, in accordance with one embodiment of the present disclosure, a lift pad is approximately sized to match the wafer, includes rotation of the wafer without rotation of the pedestal within the process chamber during processing, and advantageously achieves chamber asymmetry and Figures illustrating a motion sequence of lift pad and pedestal configurations that filter out both pedestal asymmetry.
9C shows the orientation of the lift pad relative to the pedestal of a lift pad and pedestal configuration during a first process sequence, a rotation sequence, and a second process sequence, with the lift pad approximately sized to the wafer, according to one embodiment of the present disclosure. This is a drawing illustrating.
10A and 10B show a lift pad that is smaller than the wafer and is configured to allow transfer of the wafer (e.g., through an end-effector arm) and a process chamber during processing, according to one embodiment of the present disclosure. Figures illustrating a motion sequence of a lift pad and pedestal configuration, including rotation of a wafer without rotation of the pedestal within it, and advantageously filtering out both chamber asymmetry and pedestal asymmetry.
10C illustrates a lift pin in accordance with an embodiment of the present disclosure, where the lift pad is smaller than the wafer, includes rotation of the wafer without rotation of the pedestal within the process chamber during processing, and advantageously filters out both chamber asymmetry and pedestal asymmetry. A diagram illustrating a motion sequence of a lift pad and pedestal configuration including assembly.
10D illustrates the orientation of the lift pad relative to the pedestal in a lift pad and pedestal configuration where the lift pad is smaller than the wafer during a first process sequence, a rotation sequence, and a second process sequence, according to one embodiment of the present disclosure. am.
FIG. 11A is a perspective view of a substrate processing system including a lift pad and pedestal configuration according to an embodiment of the present disclosure, illustrating a short stroke lift pad raising mechanism, wherein the lift pad may be substantially similar in size to the wafer or smaller than the wafer. It may be possible.
FIG. 11B is a perspective view of the substrate processing system of FIG. 11A including a lift pad and pedestal configuration according to an embodiment of the present disclosure, illustrating components of a short stroke lift pad raising mechanism.
FIG. 12A is a perspective view of a lift pad raising mechanism of a substrate processing system including the lift pad and pedestal configuration of FIGS. 11A and 11B according to an embodiment of the present disclosure.
FIG. 12B is a diagram illustrating a motion sequence of the short stroke pad raising mechanism of the lift pad and pedestal configuration of FIGS. 11A and 11B according to an embodiment of the present disclosure, illustrating upward movement of the pedestal to accommodate rotation of the lift pad. It illustrates the raising of the lift pad through a downward movement of the pedestal to facilitate entry of the end-effector for wafer transfer.
Figure 13 is a perspective view of the lift pad raising mechanism of Figure 12A, and more specifically shows the interface between the yoke and slide that provides movement of the lift pad relative to the pedestal according to one embodiment of the present disclosure.
FIG. 14A is a perspective view of the lift pad raising mechanism of FIG. 12A , more specifically illustrating the interface between the yoke and the ferroseal assembly that provides movement of the lift pad relative to the pedestal, according to one embodiment of the present disclosure.
FIG. 14B is a perspective view of the yoke of FIG. 14A interfacing with a ferroseal assembly, according to an embodiment of the present disclosure.
FIG. 14C is a perspective view of a clamping mechanism that provides linkage between the pad shaft of the lift pad and the ferroseal assembly to convert movement of the ferroseal assembly to movement of the lift pad, according to one embodiment of the present disclosure.
FIG. 14D is a perspective view of a clamp in the clamping mechanism of FIG. 14C according to one embodiment of the present disclosure.
15A illustrates elevation of a lift pad relative to a pedestal through upward movement of the pedestal to accommodate rotation of the lift pad, a lift pad that may be smaller than or substantially similar in size to the wafer, according to one embodiment of the present disclosure. is a perspective view of a substrate processing system including a lift pad and pedestal configuration, illustrating another short stroke lifting mechanism to provide wafer transfer, and where a lift pin assembly provides wafer transfer.
FIG. 15B is a perspective view of the substrate processing system of FIG. 15A including a lift pad and pedestal configuration according to an embodiment of the present disclosure and illustrates components of a short stroke pad lift mechanism.
FIG. 15C is a perspective view of the lift pad raising mechanism of FIG. 15A according to one embodiment of the present disclosure, and more specifically shows the interface between the lever and the ferroseal assembly that provides movement of the lift pad relative to the pedestal.
FIG. 15D is a perspective view of the lift pad raising mechanism of FIG. 15A according to one embodiment of the present disclosure, and more specifically shows the interface between the yoke and the pedestal bracket that provides movement of the lift pad relative to the pedestal.
FIG. 16A is a diagram illustrating movement of the lift pad raising mechanism of FIG. 15A immediately prior to separating the lift pad from the pedestal, according to one embodiment of the present disclosure.
FIG. 16B is a diagram illustrating movement of the lift pad raising mechanism of FIG. 15A after separation of the lift pad from the pedestal, according to one embodiment of the present disclosure.
17A is a diagram illustrating a high temperature bearing assembly in a lift pad and pedestal configuration, according to one embodiment of the present disclosure.
FIG. 17B is a perspective view of the high temperature bearing assembly of FIG. 17A, according to one embodiment of the present disclosure.
FIG. 17C shows an outer sapphire bushing with an annular shape of a high temperature bearing assembly, according to one embodiment of the present disclosure.
17D shows an inner sapphire bushing with an annular shape of a high temperature bearing assembly, according to one embodiment of the present disclosure.
Figure 18 shows a control module for controlling the systems described above.

Although the following detailed description includes many specific details for purposes of illustration, any person skilled in the art will recognize that many modifications and variations of the following details are within the scope of the present disclosure. Accordingly, the aspects of the disclosure described below are presented without any loss of generality or to imply limitations on the scope of the claims according to the description below.

Generally speaking, various embodiments of the present disclosure describe systems and methods that provide improved film uniformity during wafer processing (e.g., PECVD processes and ALD processes) in single-station systems and multi-station systems. Specifically, embodiments of the present disclosure provide for rotating the wafer without rotating the pedestal to filter out both chamber asymmetry and pedestal asymmetry. That way, azimuthal non-uniformities due to chamber asymmetry and pedestal asymmetry are minimized to achieve film uniformity across the entire wafer during processing (e.g., PECVD, ALD, etc.).

With a general understanding of the various embodiments, illustrative details of the embodiments will now be described with reference to the various drawings. Similarly numbered embodiments and/or components in one or more drawings are intended to have generally the same structure and/or functionality. Additionally, the drawings may not be drawn to scale and are intended to illustrate and emphasize novel concepts. It will be apparent that the present embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail so as not to unnecessarily obscure the present embodiments.

1 illustrates a reactor system 100 that may be used to deposit films on substrates, such as formed in atomic layer deposition (ALD) processes. These reactors may utilize two or more heaters, and common terminal configurations may be used in this illustrative example to control temperatures for uniformity or custom settings. More specifically, FIG. 1 illustrates a substrate processing system 100 used to process a wafer 101 . The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. The central column is configured to support a pedestal 140, which in one embodiment is a powered electrode. Pedestal 140 is electrically coupled to power supply 104 through matching network 106. The power supply is controlled by a control module 110, for example a controller. Control module 110 is configured to operate substrate processing system 100 by executing process input and control section 108. Process input and control 108 includes process recipes such as for depositing or forming films on wafer 101, such as power levels, timing parameters, process gases, mechanical movement of wafer 101, etc. You may.

The central column also includes lift pins (not shown), each of which is actuated by a corresponding lift pin actuation ring 120 when controlled by lift pin control 122. Lift pins are used to raise the wafer 101 from the pedestal 140, which allows the end-effector to pick the wafer and lower the wafer 101 after being placed by the end-effector. The substrate processing system 100 further includes a gas supply manifold 112 connected to process gas 114, e.g., gaseous chemical supplies from the facility. Depending on the processing to be performed, control module 110 controls the delivery of process gas 114 through gas supply manifold 112. The selected gases then flow into the showerhead 150 and are distributed within a defined spatial volume between the face of the showerhead 150 facing the wafer 101 and the wafer 101 supported across the pedestal 140. In ALD processes, gases can be reactants selected for absorption or reaction with absorbed reactants.

Additionally, the gases may be premixed or not premixed. Appropriate valve and mass flow control mechanisms may be employed to ensure that the correct gases are delivered during the deposition and plasma treatment phases of the process. Process gases leave the chamber through the outlet. A vacuum pump (e.g. a one or two stage mechanical dry pump and/or turbomolecular pump) withdraws the process gases and appropriately restricts them within the reactor by means of a closed loop controlled flow restriction device, such as a throttle valve or pendulum valve. Maintain that pressure.

A carrier ring 200 surrounding the outer area of the pedestal 140 is also shown. The carrier ring 200 is configured to rest on a carrier ring support area that is a step down from the wafer support area at the center of the pedestal 140. The carrier ring includes an inner radius on the outer edge side of the disk structure, e.g., an outer radius, and an inner radius on the wafer edge side of the disk structure, e.g., closest to where the wafer 101 is placed. The wafer edge side of the carrier ring includes a plurality of contact support structures configured to lift the wafer 101 when the carrier ring 200 is lifted by the spider forks 180. The carrier ring 200 can thus be lifted together with the wafer 101 and rotated to another station, for example in a multi-station system. In other embodiments, the chamber is a single-station chamber.

Figure 2 illustrates a top view of a multi-station processing tool, provided with four processing stations. This top view is a top view of the lower chamber portion 102b (eg, with the upper chamber portion 102a removed for illustration), with the four stations accessed by spider forks 226. Each of the spitter forks or forks includes a first arm and a second arm, each of the arms being positioned to surround a portion of each side of the pedestal 140. In this figure, spider forks 226 are shown in dashed lines to convey what is underneath the carrier ring 200. The spider forks 226 using an engagement and rotation mechanism 220 simultaneously lift and lift the carrier rings 200 (i.e. from the lower surface of the carrier rings 200) from the stations, before lowering the carrier rings 200 (at least one of the carrier rings supporting a wafer 101 ) to the next position so that further plasma processing, treatment and/or film deposition can occur on each of the wafers 101 . It is configured to rotate at least one or more stations.

3 shows a schematic diagram of an embodiment of a multi-station processing tool 300 with an inbound load lock 302 and an outbound load lock 304. At atmospheric pressure, the robot 306 is configured to move substrates from a loaded cassette through a pod 308 into the inbound load lock 302 through the atmospheric port 310. Inbound loadlock 302 is coupled to a vacuum source (not shown) such that when standby port 310 is closed, inbound loadlock 302 may be pumped down. Inbound load lock 302 also includes a chamber transfer port 316 interfaced with processing chamber 102b. Accordingly, when the chamber transfer port 316 is open, another robot (not shown) may move the substrate from the inbound load lock 302 to the pedestal 140 of the first process station for processing.

The processing chamber 102b shown includes four process stations numbered 1 through 4 in the embodiment shown in FIG. 3 . In some embodiments, processing chamber 102b maintains a low pressure atmosphere such that substrates may be transferred using carrier ring 200 between process stations without experiencing vacuum break and/or exposure to air. It may be configured to do so. Each of the process stations shown in FIG. 3 includes a process station substrate holder (shown at 318 for station 1) and process gas delivery line inlets.

Figure 3 also shows spider forks 226 for transporting substrates within processing chamber 102b. Spider forks 226 rotate and enable the transfer of wafers from one station to another. Transfer occurs by enabling the spider forks 226 to lift the carrier rings 200 from the outer lower surface, lifting the wafer and rotating the wafer and carrier together to the next station. In one configuration, the spider forks 226 are made of a ceramic material to withstand high levels of heat during processing.

Wafer positioning lift pad and pedestal configuration

4 illustrates a substrate processing system including a lift pad and pedestal configuration 400, with lift pad 430 approximately sized to match a wafer (not shown) placed thereon, according to one embodiment of the present disclosure. is decided. In some embodiments, lift pad 430 is approximately sized to allow integration with the carrier ring assembly. Lift pad and pedestal configuration 400 may be implemented within the systems of FIGS. 1-3, including multi-station tools and single-station processing tools.

Lift pad and pedestal configuration 400 includes a lift pad 430 controlled by lift pad control 455 and a pedestal 140' controlled by pedestal control 450. Center shaft 510' is coupled to pedestal 140' and pad shaft 560 is coupled to lift pad 430. The pedestal control unit 450 controls the movement of the central shaft 510' to induce the movement of the pedestal 140'. For example, pedestal control 450 controls the control of pedestal 140' (e.g., up and down along a central axis) during pre-processing, processing, and post-processing sequences. Control movement. The lift pad control unit 455 controls the movement of the lift pad shaft 560 to induce the movement of the lift pad 430. For example, the lift pad control 455 may be configured to move the pad during pre-processing, processing, and post-processing sequences (e.g., up and down along the central axis 471 and rotating about the central axis 471 Rotationally) controls the movement of the lift pad 430. Specifically, the lift pad and pedestal configuration 400 provides rotation of the wafer with a significantly reduced hardware rotation signature compared to rotating the entire pedestal 140'. That is, because the pedestal 140' and/or the chamber (not shown) remain fixed relative to the lift pad 430 while the wafer rotates, both pedestal- and chamber-based asymmetries are filtered out and remain on the wafer during processing. Significantly reduces hardware pedestal and chamber signatures appearing. That is, the non-uniformities introduced by the pedestal signature can be distributed symmetrically throughout the wafer through wafer rotation using a lift pad, without rotating the pedestal during wafer processing.

Lift pad and pedestal configuration 400, when placed on pedestal 140', is configured to heat pedestal 140' directly (e.g., via conduction) and indirectly heat lift pad 430. A plurality of heating elements 470 are used. Additionally, the lift pad and pedestal configuration 400 optionally includes a plurality of cooling elements 480 to cool the pedestal 140', in some process modules.

Lift pad and pedestal configuration 400 includes a central column shown as including a coaxial lift pin assembly 415 having a plurality of lift pins controlled by lift pin control 122, as previously described. . For example, lift pins raise the wafer from lift pad 430 and pedestal 140' to allow the end-effector to pick up the wafer and lower the wafer after placement by the end-effector during wafer transfer sequences. It is used for.

Lift pad and pedestal configuration 400 includes bellows 420. Bellows 420 is individually coupled to lift pin assembly 415, pedestal, or lift pad and is configured for movement of the lift pins, pedestal, or lift pad. Additionally, the lift pad and pedestal arrangement 400 includes a rotation motor in a belt-pulley arrangement 427. Additionally, ferroseal 425 facilitates rotation of lift pad 430 in a vacuum atmosphere. Additionally, in one embodiment, the wafer-sized lift pad 430 is compatible with an electrostatic chuck (ESC). ESC 570 is configured to include electrodes biased with a high voltage to induce an electrostatic holding force such that ESC 570 holds the wafer in an active position. Additionally, in one embodiment, the lift pad and pedestal configuration 400 provides a space between the lift pad 430 and the pedestal 140', particularly when the lift pad 430 is moved to rest on the pedestal 140'. and a compliant shaft section 435 that promotes a uniform gap.

4 , in one embodiment, a ball screw 437 (e.g., turning to the left) drives the lift pins in the opposite direction of the pedestal 140' during one sequence of processing. It is configured to do so. For example, the ball screw 437 may be engaged during a wafer transfer sequence to extend the lift pins while the pedestal 140' is moved near or to the bottom-most position for wafer transfer. It may be possible. A ball screw 443 (eg, turning to the right) is used to move the pedestal along the central axis in the Z direction. For example, the ball screw 443 is configured to drive the pedestal 140' in the Z-direction along the central axis using a Z-motor 445. In addition, a short-stroke coupling mechanism 440 is shown.

FIG. 5A is a cross-sectional view of the substrate processing system of FIG. 4, according to one embodiment of the present disclosure. Specifically, FIG. 5A illustrates a lift pad and pedestal configuration 400 in which lift pad 430 is approximately sized to match a wafer (not shown).

For purposes of illustration only, pedestal 140' is formed of three segments to accommodate a plurality of heating elements 470 and a plurality of cooling elements 480 during fabrication. It is recognized that pedestal 140' is considered an element and may be formed using any suitable fabrication process.

As shown in Figure 5A, pedestal 140' and lift pad 430 are at a level to allow extension of lift pins 557 for wafer transfer purposes. Each of the lift pins 557 is coupled to a corresponding lift pin support 555 to effect movement, and the movement of the lift pin supports 555 is controlled by the lift pin control unit 122. In one embodiment, pedestal 140' is in the lowest position along Z moving along central axis 471.

As previously described, pedestal control 450 controls the movement of central shaft 510'. Because the pedestal 140' is coupled to the central shaft 510', the movement of the central shaft 510' is translated to the pedestal 140'. In addition, lift pad control 455 controls the movement of pad shaft 560, as previously described. Because the lift pad 430 is coupled to the pad shaft 560, the movement of the pad shaft 560 is converted to the lift pad 430.

FIG. 5B illustrates an assembly 500B including a lift pad and pedestal configuration 400 previously introduced in FIG. 4 and FIGS. 5A and 5B according to one embodiment of the present disclosure. This is a cross-sectional view of . Lift pad 430 is approximately sized to match the wafer (not shown). In yet another embodiment, the diameter of lift pad 430 is sized to accommodate a carrier ring (not shown). Lift pad and pedestal configuration (500A) deposits in single-station and multi-station systems by rotating the wafer using the lift pad without rotating the pedestal to filter out azimuthal non-uniformities due to chamber asymmetry and pedestal asymmetry. Provides improved film uniformity during processes (e.g., PECVD, ALD, etc.). Specifically, the rotating lift pad 430 is much thinner than the entire pedestal 140', and thus the rotation signature of the lift pad 430 includes heater elements 470 and cooling elements 480. much smaller than the rotation signature of the pedestal (140') (asymmetrical hardware contributes to irregularities). That is, the non-uniformities introduced by the pedestal signature can be distributed symmetrically throughout the wafer through wafer rotation using a lift pad, without rotating the pedestal during wafer processing.

In assembly 500B, pedestal 140' includes a pedestal top surface 533 extending from a central axis 471 of pedestal 140'. Top surface 533 is positioned on axis 471 configured to facilitate coupling between pad shaft 510' and lift pad 430 to provide an interface between pedestal 140' and lift pad 430. may include one or more recesses, such as a central recess, and a recess forming an outer rim 509. Pedestal 140' may be described as having a generally circular shape when viewed from above and extending to the pedestal diameter, but the footprint of pedestal 140' may have different configurations such as carrier ring support and end-effector access, etc. It may be varied from an exact circle to accommodate the features.

As shown, the pedestal 140' is connected to an actuator 515, which is configured to control the movement of the pedestal 140'. Specifically, the pedestal control unit 450 is coupled to the actuator 515 to control the movement of the pedestal 140'. That is, central shaft 510' is coupled to actuator 515 and pedestal 140' such that central shaft 510' extends between actuator 515 and pedestal 140'. The central shaft 510' is configured to move the pedestal 140' along the central axis 471. In this way, the movement of the actuator 515 is converted into a movement of the central shaft 510', which in turn is converted into a movement of the pedestal 140'.

Additionally, pedestal 140' is shown as having three segments 140a', 140b', and 140c' for illustration purposes only. For example, pedestal 140' may be formed of three segments to accommodate the formation of a plurality of heating elements 470 and/or a plurality of cooling elements 480 during fabrication. As previously disclosed, it is recognized that pedestal 140' is considered an element and may be formed using any suitable fabrication processes.

In assembly 500B, lift pad 430 includes a pad top surface 575 extending from central axis 471. In one embodiment, pad top surface 575 extends pad diameter 577. Lift pad 430 includes a pad bottom surface 543 configured to rest on a pedestal top surface 533. Additionally, pad top surface 575 is configured to support the wafer when the wafer is positioned on top.

Additionally, lift pad 430 is electrostatic chuck (ESC) compatible as previously described. For example, ESC assembly 570 is positioned below pad top surface 575. Electrostatic chuck assembly 570 prevents wafer movement due to chamber flow disturbances and maximizes contact of the wafer to the chuck (i.e., to lift pad top surface 575). The advantage of a lift pad 430 approximately sized to the wafer combined with a full-wafer ESC results in minimal wafer backside deposition. Additionally, full-wafer ESCs do not require declamping to twist and/or rotate.

As shown, lift pad 430 is connected to an actuator 515 , which is configured to control the movement of lift pad 430 . Lift pad control 455 is coupled to actuator 515 to control movement of lift pad 430. That is, pad shaft 560 is coupled to actuator 515 and pedestal 140' such that pad shaft 560 extends between actuator 515 and pedestal 140'. Pad shaft 560 is configured within central shaft 510' connected to pedestal 140'. Specifically, the pad shaft 560 is configured to move the pedestal 140' along the central axis 471. In this way, the movement of the actuator 515 is converted into a movement of the pad shaft 560, which in turn is converted into a movement of the lift pad 430. In one embodiment, actuator 515 controls the movement of both lift pad 430 and pedestal 140'.

Specifically, pad shaft 560 is configured to separate lift pad 430 from pedestal 140' and will also be more fully described below with respect to FIGS. 9A-9C. For example, lift pad 430 may be positioned when pedestal 140' is in an upward position such that lift pad 430 is separated from pedestal top surface 533 by a process rotation displacement for purposes of rotation of lift pad 430. , is configured to move upward relative to the pedestal top surface 533 along the central axis 471. In one embodiment, lift pad 430 moves upward relative to pedestal top surface 533 when pedestal 140' reaches its uppermost upward position. Additionally, when lift pad 430 is separated from pedestal top surface 533, lift pad 430 is coupled to the pedestal at least between the first and second angular orientations (e.g., between 0° and 180°). It is configured to rotate relative to the pedestal top surface 533 of 140'. Pad shaft 560 is also configured to lower lift pad 430 so that it rests on pedestal 140'. Specifically, a flexible coupler 435 (shown in FIG. 5C) is positioned within the pad shaft 560 and is configured to position the lift pad 430 uniformly over the pedestal 140'.

To prepare for lift pad 430 rotation, lift pad 430 moves upward relative to pedestal 140' in one embodiment. That is, the lift pad 430 is separated from the pedestal top surface 533 by a process rotation displacement 940 (see FIG. 9B), and the wafer placed on the lift pad 430 is also positioned on the pedestal. It is configured to move upward relative to the pedestal top surface 533 along a central axis 471 when pedestal 140' is in an upward position (e.g., a top upward position) during wafer processing to separate from 140'. . Specifically, when the lift pad 430 is separated from the pedestal 140', the lift pad 430 is positioned at least between the first and second angular orientations with respect to the pedestal top surface 533. ) is configured to rotate for . This rotation reduces the effects of the pedestal's hardware signature during processing, and also reduces the effects of the chamber hardware signature during processing. Additionally, the focus ring (not shown) does not rotate with the wafer, reducing hardware signatures on the wafer during processing.

Assembly 500 includes a lift pin assembly including a plurality of lift pins 557 . For purposes of illustration, according to one embodiment of the present disclosure, pedestal 140' and lift pad 430 are at a level to allow extension of lift pins 557 for purposes of wafer transfer. Specifically, the lift pins 557 allow an end-effector arm (not shown) (with or without a carrier ring) to transport the wafer to transfer the wafer to the lift pins 557 or to the lift pins 557. Lift via a plurality of pedestal shafts 518 disposed within pedestal 140' and via a plurality of lift pad shafts 519 of lift pad 430 so that the wafer can be orbitally corrected into a position to receive the wafer. It extends from pad 430. Corresponding pedestal shafts 518 and pad shafts 519 are arranged and configured to receive lift pins 557 . As shown, one or more lift pin shafts and corresponding lift pins may be configured within a lift pin assembly to lift and place or remove a wafer during wafer transfer. As shown, each of the lift pins 557 is coupled to a corresponding lift pin support 555 to cause movement. Lift pin supports 555 are coupled to lift pin actuator 550. In addition, the lift pin control unit 122 controls the movement of the lift pin actuator 550 to cause movement of the lift pins 557.

Lift pin support 555 may be of any shape (eg, an annular ring washer, arm extending from an annular base, etc.). Specifically, during operation of the lift pin assembly, lift pins 557 are attached to lift pin supports 555 and elevate the wafer above the lift pad top surface 575 during wafer transfer and processing within the lift pin shaft and/ or positioned to move to lower the wafer so that it rests on the pad top surface 575.

5C illustrates a lift pad 140 including a pad gap that sets minimum contact areas (MCAs), in particular to control and/or mechanically set the gap during process sequences, according to an embodiment of the present disclosure. This is a diagram of the interface between and pedestal 430. This results in uniform temperature and impedance control of the pad. The interface shown in Figure 5C is an example of the interfaces between the lift pads and pedestals shown in Figures 5A and 5B.

This is advantageous so that the gap between lift pad 430 and pedestal 140' is uniform and small during deposition processes. For example, PECVD and ALD processing may exhibit non-uniformity signatures due to temperature and plasma impedance, for example. Both parameters are sensitive to the gap between the wafer and the pedestal. Minimizing the size of the gap and controlling the uniformity of the gap across the lift pad and pedestal configuration reduces signatures caused by temperature and plasma impedance.

Specifically, the small gap allows low impedance coupling of radio frequency (RF) energy between lift pad 430 and pedestal 140'. Additionally, the small gap provides lower thermal resistance, allowing heating and/or cooling to be easily performed from the pedestal 140' to the lift pad 430. Additionally, the uniform gap between the lift pad 430 and the pedestal 140' ensures uniform heat transfer and uniform RF coupling.

As shown, the pedestal top surface 533 includes a plurality of pad supports 595 formed on the top (e.g., pad gaps establishing MCAs), the pad supports extending the pad over the pedestal top surface 533. It is configured to support the lift pad 430 at the support level. Segments 140a' and 140b' of pedestal 140' are shown in FIG. 5C. As previously described, the pad supports 595 provide a uniform, small gap between the lift pad 430 and the pedestal 140', thereby providing a uniform, small gap between the lift pad 430 and the pedestal 140'. Ensures heat transfer and uniform RF coupling. More specifically, the bottom surface 543 of the lift pad 430 is configured to rest on the plurality of pad supports 595 of the pedestal 430. For example, the pedestal 140' and the lift pad 430 are positioned in a process position (e.g., plasma processing, treatment and/or film deposition) such that the lift pad 430 rests on a plurality of pad supports 595. (when performing), or may be configured as a pre-court position. In addition, the lift pad 430 is configured to move with the pedestal 140' when supported on the pad supports 595. Pad supports may be electrically conductive for DC, low frequency, and RF transmission.

6 illustrates a substrate processing system including a lift pad and pedestal configuration 600, where the lift pad 630 is smaller than the wafer (not shown), according to one embodiment of the present disclosure. Lift pad and pedestal configuration 600 may be implemented within the systems of FIGS. 1-3, including multi-station tools and single-station processing tools.

Lift pad and pedestal configuration 600 includes a lift pad 630 controlled by lift pad control 455 and a pedestal 140'' controlled by pedestal control 450. As previously described, pedestal control 450 controls movement of pedestal 140'' along central axis 471', and lift pad control 455 controls lift about central axis 471'. Controls the movement (e.g., up, down, and rotating) of the pad 630. Lift pad and pedestal configuration 600 has a significantly reduced hardware rotation signature when compared to processing tools with or without pedestal rotation and provides rotation of wafers (not shown) through lift pad 630. do.

Lift pad and pedestal configuration 600 includes a small lift pad 630 that is smaller than the wafer footprint. Lift pad and pedestal configuration 600 may be suitable for some deposition processes when ESC is selected. In that case, a small lift pad 630 is preferred because it allows pedestal MCAs (minimum contact areas) to support the wafer during the process so that it does not rotate with the wafer. In that case, adjusting the gap of the wafer does not nominally rotate the wafer, which reduces exposure to hardware asymmetry. In addition, a smaller lift pad 630 also offers additional benefits with reduced mass that must be rotated and provides less mechanical stresses to the system.

Lift pad and pedestal configuration 600 includes a plurality of pad shafts 560' of lift pad 630 to match the temperature at the surface of lift pad 630 to the surface of pedestal 140''. It includes heating elements 470' and thermocouple 607. Cooling elements of the pedestal 140'' may be included in some process modules.

In one embodiment, not shown, but as previously described, lift pad and pedestal configuration 600 has a lift pin having a plurality of lift pins controlled by lift pin control 122 to selectively provide wafer transfer. Includes pin assembly. Flange 605 is included in a co-axial lift pin assembly (not shown). In another embodiment, a miniature lift pad 630 may be used to provide lift pin functionality, eliminating the need for a lift pin assembly, thus providing cost and packaging advantages.

The lift pad and pedestal configuration 600 includes a selectable lift pin assembly, a pedestal 140'', or a bellows 420', each independently coupled to the lift pad 630 and configured for their movement. Includes. In addition, lift pad and pedestal configuration 600 also includes a rotation motor of a belt-pulley device (not shown) that is smaller than the belt-pulley device shown in FIG. 4 . Ferrosealing 425' facilitates rotation of lift pad 630 in a vacuum atmosphere.

In addition, the Z-motor 445' is configured to drive the pedestal 140'' in the Z-direction along the central axis 471'. In addition, the coupling mechanism drive slide 603 is attached to the pedestal and the central shaft 510'', and is attached to a ball screw attached to the Z-motor 445', all along the central axis 471'. It is used to facilitate the movement of the pedestal (140'').

FIG. 7A is a perspective view of the substrate processing system of FIG. 6, according to one embodiment of the present disclosure. Specifically, FIG. 7A includes a lift pad and pedestal configuration 600 where the lift pad 630 is smaller than the wafer (not shown). As shown in FIG. 7A, pedestal 140'' and lift pad 630 are shown in positions and/or levels allowing wafer processing.

As previously described, pedestal control 450 controls the movement of central shaft 510''. Because the pedestal 140'' is coupled to the central shaft 510'', the movement of the central shaft 510'' is converted to the pedestal 140''. In addition, lift pad control 455 controls the movement of pad shaft 560', as previously described. Because lift pad 630 is coupled to pad shaft 560', movement of pad shaft 560' is converted to lift pad 630.

Pedestal 140'' of lift pad and pedestal configuration 600 includes a pedestal top surface 720 extending from a central axis 471'' of pedestal 140''. A plurality of wafer supports 760 are disposed on top surface 720. Additionally, a raised rim 710 is disposed on the outer edge of the pedestal top surface 720, where the raised rim 710 is configured to block lateral movement of a wafer disposed on the pedestal 140''. do.

7B is a cross-sectional view of the substrate processing system of FIG. 6 showing assembly 700B including lift pad and pedestal configuration 600 previously introduced in FIGS. 6 and 7A, according to one embodiment of the present disclosure. . The lift pad 630 is sized to be smaller than the wafer according to one embodiment of the present disclosure. For illustrative purposes only, pedestal 140'' and lift pad 630 are shown in positions and/or levels allowing wafer processing. Lift pad and pedestal configuration assembly 700B can be used to deposit in single-station systems and multi-station systems by rotating the wafer using the lift pad without rotating the pedestal to filter out azimuthal non-uniformities due to chamber asymmetry and pedestal asymmetry. Provides improved film uniformity during processes (e.g., PECVD, ALD, etc.). Specifically, the rotating lift pad 630 is much smaller and much thinner than the overall pedestal 140'', such that the rotation signature of the lift pad 630 is similar to that of the pedestal 620, including the heater elements 480''. is much smaller than the rotation signature of (asymmetric hardware contributes to the inhomogeneities). That is, the non-uniformities introduced by the pedestal signature can be distributed symmetrically throughout the wafer through wafer rotation using a lift pad, without rotating the pedestal during wafer processing.

In assembly 700B, pedestal 140'' includes a pedestal top surface 720 extending from a central axis 471' of pedestal 140''. Pedestal top surface 720 is configured to support the wafer when it is placed on top. The top surface 720 has a recess 705 configured to facilitate coupling between the pad shaft 510' and the lift pad 430, and a recess forming the outer rim 710 along the pedestal 140''. It may also include one or more recesses to provide an interface between the lift pad 630 and the lift pad 630 . Although pedestal 140'' may be described as having a generally circular shape when viewed from above and extending to the pedestal diameter, the footprint of pedestal 140'' may have different configurations, such as carrier ring support, and end-effector access, etc. It can also be varied from a circle to accommodate features.

As shown, pedestal 140'' is connected to an actuator 515', which is configured to control the movement of pedestal 140''. Specifically, the pedestal controller 450 is coupled to the actuator 515' to control the movement of the pedestal 140''. Specifically, central shaft 510'' is coupled to actuator 515' and pedestal 140'' such that central shaft 510'' extends between actuator 515' and pedestal 140''. do. The central shaft 510'' is configured to move the pedestal 140'' along the central axis 471'. In this way, the movement of the actuator 515' is converted into a movement of the central shaft 510'', which in turn is converted into a movement of the pedestal 140''.

In one embodiment, the pedestal top surface 720 includes a plurality of wafer supports (not shown) formed on the top to support the wafer 590 at a wafer support level above the pedestal top surface 720. It is composed. The wafer supports provide a uniform, small gap between the pedestal 140'' and any wafer 590 placed on top.

Pedestal 140'' includes a recess 705 centered on pedestal top surface 720 and extending from central axis 471', recess 705 having a recess height, and 705 has a recessed bottom surface 706. That is, recess 705 lies over the central portion of pedestal top surface 720. In one embodiment, the bottom recess surface 706 includes a plurality of pad supports formed at the top, where the pad supports (e.g., MCAs) are positioned at a pad support level above the bottom recess surface 706. It is configured to support the lift pad 630. In another embodiment, MCAs are disposed on the bottom surface of lift pad 630, as further described with respect to FIG. 7F.

Additionally, pedestal 140'' is shown as having two segments 140a'' and 140b'', for illustrative purposes only. For example, pedestal 140'' may be formed in two segments to accommodate formation during fabrication of a plurality of heating elements 471' and/or a plurality of cooling elements (not shown). As previously disclosed, it is recognized that pedestal 140'' is considered an element and may be formed using any suitable fabrication processes.

In assembly 700B, lift pad 630 includes a pad top surface 775 extending from central axis 471' to pad diameter 777. Lift pad 630 is configured to rest on recess bottom surface 706 when positioned within recess 705, and recess 705 is configured to receive lift pad 630. Specifically, lift pad top surface 775 is positioned such that wafer 590 is positioned on the wafer support of pedestal 140'', such as in a process position (e.g., when performing plasma processing, processing and/or film deposition). When placed on the field, it is underneath the wafer 590. That is, lift pad top surface 775 lies below the wafer support level when pad bottom surface 632 of lift pad 630 rests on a plurality of pad supports (e.g., MCAs 745). . Additionally, the lift pad 630 is configured to move with the pedestal 620 when resting on the pad supports.

As shown, lift pad 630 is connected to an actuator 515' configured to control the movement of lift pad 630. For example, lift pad control 455 is coupled to actuator 515' to control movement of lift pad 630. Specifically, pad shaft 560' is coupled to actuator 515' and pedestal 140'' such that pad shaft 560' extends between actuator 515' and pedestal 140''. . Pad shaft 560' is configured within central shaft 510'' connected to pedestal 140''. Specifically, pad shaft 560' is configured to move lift pad 630 along central axis 471'. In this way, the movement of the actuator 515' is converted into a movement of the pad shaft 560'', which in turn is converted into a movement of the lift pad 630. In one embodiment, actuator 515' controls the movement of both lift pad 630 and pedestal 140''.

Specifically, as will be described more fully below with respect to FIGS. 10A-10D, pad shaft 560' is configured to separate lift pad 630 from pedestal 140'' for lift pad rotation. . For example, lift pad 630 may be positioned such that pedestal 140'' is in an upward position such that lift pad 630 is separated from pedestal top surface 720 by a process rotation displacement for the purpose of rotating lift pad 630. It is configured to move upward relative to the pedestal top surface 720 along the central axis 471' when in position. Pad shaft 560' is also configured to lower lift pad 430 so that it rests on pedestal 140'. In one embodiment, lift pad 630 moves upward relative to pedestal 140'' to prepare for lift pad rotation. That is, such that the lift pad 630 is separated from the pedestal top surface 720 by a process rotation displacement 1040 (see FIGS. 10B and 10C), and the wafer placed on the lift pad 630 is separated from the pedestal 140''. ) The lift pad 630 is configured to move upward relative to the pedestal top surface 720 along the central axis 471'' when the pedestal 140'' is in the upward position. In one embodiment, pedestal 140'' is in the uppermost upward position during lift pad 630 rotation. Specifically, when lift pad 630 is separated from pedestal 140'', lift pad 630 is at least between the first and second angular orientations (e.g., between 0° and 180°). It is configured to rotate relative to the pedestal top surface 720. This rotation reduces the effects of the pedestal's hardware signature during processing, and also reduces the effects of the chamber hardware signature during processing.

In other embodiments, lift pad 630 provides lift pin functionality to raise and lower the wafer during wafer transfer and processing. Specifically, when the pedestal is in its lowest downward position such that the lift pad 630 separates from the center pedestal top surface 621 by a sufficiently large displacement for entry of the end-effector arm, the lift pad 630 is pressed against the center pedestal top surface. It is configured to move upward with respect to (720).

7B, the pedestal 140'' of the lift pad and pedestal configuration 600 includes a raised rim 710 disposed on an outer edge of the pedestal top surface 720, 710 is configured to block lateral movement of the wafer placed on the pedestal 140''. That is, the rim 710 is a step above the pedestal top surface 720 of sufficient height to block movement of the wafer. For example, when a wafer is resting on the pedestal top surface 720, the raised rim 710 forms a groove that blocks lateral movement of the wafer.

7C illustrates a lift pad and pedestal configuration 600', where the lift pad 630 is smaller than the wafer, based on the configurations previously introduced in FIGS. 6, 7A, and 7B, according to one embodiment of the present disclosure. A cross-sectional view of the substrate processing system of FIG. 6 showing assembly 700C comprising: Lift pad and pedestal configuration 600' includes a pedestal 140''' and a lift pad 630. More specifically, the lift pad and pedestal configuration 600' of Figure 7C is similar to the lift pad and pedestal configuration 600 of Figure 7B and has the same advantages and advantages previously described with respect to Figure 7B (e.g. For example, improved film uniformity during deposition processes. That is, the non-uniformities introduced by the pedestal signature can be symmetrically distributed across the wafer during wafer processing through wafer rotation using a lift pad without rotating the pedestal. However, the lift pad and pedestal configuration 600' also includes a lift pin assembly configured for transfer of a corresponding wafer (e.g., wafer 590).

The lift pin assembly of assembly 700C includes a plurality of lift pins 557'. For purposes of illustration, according to one embodiment of the present disclosure, pedestal 140''' and lift pad 630 are at a level to allow extension of lift pins 557'for wafer transfer purposes. Specifically, an end-effector arm (not shown) that transports the wafer (with or without a carrier ring) is positioned to transfer the wafer to lift pins 557' or to receive the wafer from lift pins 557'. Lift pins 557' are displaced from a central axis 471' and extend from a plurality of pedestal shafts 518' disposed within pedestal 140'' in such a way that they can be steered into a position to do so. Corresponding pedestal shafts 518' are configured to receive corresponding lift pins 557'. As shown, one or more pedestal shafts 518' and corresponding lift pins 557' may be configured within a lift pin assembly to lift upward and place or remove a wafer during wafer transfer. As shown, each of the lift pins 557' is coupled to a corresponding lift pin support 555' and lifts the wafer above the pedestal top surface 720 during wafer transfer and processing and/or lifts the wafer to the pedestal top surface. It is positioned to move within the pedestal shaft 518' to lower it to 720. The lift pin support 555' is configured to move relative to the pedestal top surface 720 parallel to the central axis 471'. Additionally, lift pin supports 555' are coupled to lift pin actuator 550'. In addition, the previously introduced lift pin control unit 122 controls the movement of the lift pin actuator 550' to influence the movement of the lift pins 557'. Lift pin support 555' may be of any shape (eg, an annular ring washer, arm extending from an annular base, etc.).

FIG. 7D illustrates a lift pad to pedestal diagram of the substrate processing system of FIG. 6 including the lift pad and pedestal configuration 600 or 600' of FIGS. 7A-7C where the lift pad is smaller than the wafer, according to one embodiment of the present disclosure. This is a cross-sectional view of the interface.

A high temperature bearing 755 is positioned within the pad shaft 560' and is configured to position the lift pad 630 uniformly within the recess 705 of the pedestal 140' or 140''. To handle high temperatures, the wear surfaces are preferably made of a hard, chemically compatible material, such as sapphire. Bearing centering is insensitive to the relative thermal expansion of bearing components, shaft, and pedestal materials. In one embodiment, the conical clamping surface of the sapphire bearing rings may be spring loaded using an assembly of load distribution washers, spring washers, and retaining rings of a material suitable for high temperature and corrosive operation. The bearing is clamped with minimal energy in the centered position and maintains the centered position through temperature changes. The sapphire contact ring prevents indentation of the softer pedestal material.

Specifically, the interface between the lift pad 630 and the pedestal 140''/140''' is shown, and in particular, the pad gap setting MCAs to control and/or mechanically set the gap during process sequences. Includes. For example, FIG. 7D shows sapphire balls 740 and 745 (e.g., MCAs) swag into lift pad 630. Specifically, balls 740 and 745 protrude slightly above their corresponding surfaces by approximately a few millimeters of operating system (OS) at the process temperature. The sapphire balls act to contact the pedestal (140''/140''') of the MCA (minimum contact area) to minimize heat conduction through contact with poor heat conducting material. Additionally, the sapphire contact ring prevents indentation of the softer pedestal material.

For example, Figure 7E is a perspective view of the top surface 631 of the lift pad 630 shown in Figure 7D, including MCAs 740, according to one embodiment of the present disclosure. In one embodiment, when the lift pad 630 rests on the recess bottom surface 706, the wafer referencing MCAs 740 are positioned on the top such that the pad top surface 631 is below the wafer support level. It is positioned at 0.002" above surface 631. Because in one embodiment the separate pedestal wafer supports (e.g., MCAs) located on the top surface of pedestal 720 are higher by approximately 0.002" or more. The wafer associated MCAs 740 do not contact the wafer 590 when the lift pad 630 rests on the pedestal 140''/140'''. Wafer supports disposed on the pedestal top surface 720 of the pedestal 140''/140''' are configured to support a wafer 590 when placed on top with a wafer support level above the top surface 720.

Additionally, FIG. 7F is a perspective view of the bottom surface 632 of the lift pad 630 shown in FIG. 7D including MCAs 745, according to one embodiment of the present disclosure. In one embodiment, the wafer-related MCAs 745 are 0.004" above bottom surface 632. This is to provide uniform, repeatable heat resistance to the pedestal 140''/140'''. Ensures a uniform, repeatable gap between lift pad 630 and pedestal 140''/140'''. In one embodiment, MCAs 745 are positioned over recess bottom surface 706. It operates in conjunction with a plurality of pad supports (not shown) disposed on the recess bottom surface 706, which are configured to support the lift pad 630 at the pad support level.

8 is a flow diagram 800 illustrating a method of operating a process chamber configured to deposit a film on a wafer, according to one embodiment of the present disclosure, wherein the method advantageously filters both chamber asymmetry and pedestal asymmetry. It provides rotation of the wafer without rotation of the pedestal within the process chamber. Flow diagram 800 in embodiments of the present disclosure is implemented within the systems and lift pad and pedestal configurations of FIGS. 1-7. The operations of flow chart 800 are applicable to wafer-size lift pad and pedestal configurations as shown in the embodiments of FIGS. 4 and 5A-5C, and in other embodiments, FIGS. 6 and 7A-7F. As shown, it is applicable to lift pad and pedestal configurations including lift pads sized smaller than the wafer.

At operation 805, the method includes moving the lift pad and pedestal configuration to a downward position to receive the wafer. In one embodiment, the pedestal is in its lowest downward position. In a lift pad and pedestal configuration that includes a lift pin assembly, the lift pins may extend for wafer transfer. In a lift pad and pedestal configuration that does not include a lift pin assembly, the lift pad (e.g., smaller than the wafer) may be separated from the pedestal top surface by a sufficiently large displacement for entry of the end-effector arm for wafer transfer purposes. there is. At operation 810, the wafer is placed onto an assembly including a lift pad and pedestal configuration, and the lift pad is configured to rest on the pedestal. For example, this may involve placing the wafer on extended lift pins, or placing the wafer on an extended lift pad. The lift pins or lift pad are lowered so that the wafer rests on the wafer supports of the pedestal top surface, lift pad top surface, or ESC chuck surface.

Pedestal movement is controlled so that the pedestal moves up and down along the central axis of the pedestal. In one embodiment, the coupling mechanism converts the movement of the pedestal to a lift pad and a lift pad of the pedestal configuration. For example, in operation 820, after the wafer is transferred, the lift pad and pedestal configuration are moved into a process position. In the process position, the lift pad rests on a pedestal as previously described. Additionally, the lift pad is in a first orientation relative to the pedestal and/or chamber. The first orientation may be arbitrary. For example, both the lift pad and pedestal may be positioned at a 0° angle orientation within the chamber.

At operation 825, the method includes processing the wafer in a first orientation with a first number of processing cycles. For example, the deposition of one or more films may implement an atomic layer deposition (ALD) process, also known as atomic layer chemical vapor deposition (ALCVD). ALD produces very thin films that are highly conformal, smooth, and possess excellent physical properties. ALD uses volatile gases, solids or vapors that are sequentially introduced (or pulsed) onto a heated substrate. In one ALD cycle, four operations are performed and can be defined in the A-P-B-P sequence. In Step A, the first precursor is introduced as a gas and absorbed (or adsorbed) into the substrate. In stage P, immediately following stage A, the reactor chamber is cleared of the gaseous precursor. In step B, a second precursor is introduced as a gas and reacts with the absorbed precursor to form a monolayer of the desired material. In step P immediately following step B, the reactor chamber again expels the gaseous second precursor. By controlling this A-P-B-P sequence, films produced by ALD are deposited a single layer at a time by repeatedly switching sequential flows of two or more reactive gases over the substrate. In that way, the thickness of the film may be adjusted depending on the number of cycles performed in the A-P-B-P sequence. The first number of cycles may be specified by the value X. To illustrate the present embodiments, which disclose a lift pad and pedestal configuration capable of rotating a wafer without rotation of the pedestal within the process chamber during processing, which advantageously filters out both chamber asymmetry and pedestal asymmetry, It may be 50 cycles.

At operation 830, raising the pedestal to an upward position includes raising the pedestal to an upward position. In one embodiment, the pedestal is raised to the highest upward position. By moving the pedestal to the upward position, the lift pad is also raised upward relative to the pedestal (e.g., the top surface of the pedestal) such that the wafer placed on the lift pad is separated from the pedestal 820. In one embodiment, a coupling mechanism raises the lift pad when the pedestal is near the top of its travel. That is, when the surface contact of the lift pad 830 with the pedestal 820 is broken, it allows the lift pad to rotate freely. Specifically, the lift pad is separated from the pedestal by a process rotation displacement (eg, approximately 1 mm). In this way, the wafer placed on or supported by the lift pad is also separated from the pedestal.

At operation 840, the method includes rotating the lift pad 830 relative to the pedestal 820 (e.g., a top surface of the pedestal) when the lift pad 830 is separated from the pedestal 820. . Specifically, lift pad 830 rotates relative to pedestal 820 from a first orientation to a second orientation. For example, the second orientation may be 180° from the first orientation (eg, a first orientation of 0°).

At operation 845, the method includes lowering the lift pad so that it rests on the pedestal. Additionally, at operation 850, the method includes moving the pedestal, and correspondingly the lift pad, back to the process position. In one embodiment, the operations performed at 845 and 850 occur simultaneously through the action of a coupling mechanism to lower the pedestal back to the process position, such that the lift pad is also lowered until the lift pad rests on the pedestal. do.

At operation 855, the method includes processing the wafer for a second number of processing cycles (e.g., each cycle comprising an A-P-B-P sequence), with the lift pad in a second orientation relative to the pedestal. A second number of cycles may be specified by the value Y. To illustrate the present embodiments, which disclose a lift pad and pedestal configuration that can rotate a wafer without rotation of the pedestal within the process chamber during processing, which advantageously filters out both chamber asymmetry and pedestal asymmetry, the Y number of cycles is It may be 50 cycles.

In that way, the thickness of the film may be adjusted depending on the total number of cycles performing the A-P-B-P sequence (e.g., X+Y). Because the wafer also rotates relative to the pedestal during the second number of cycles, both chamber asymmetry and pedestal asymmetry are filtered out, providing improved film uniformity during wafer processing.

In the example provided above, the first number of cycles is That is, the first number of processing cycles (X) may be one-half the total number of cycles performed in the first orientation, and the second number of processing cycles (Y) may be the number of cycles performed in the second orientation. It may be 1/2 of their total number. Thus, 50 cycles are performed with a first angular orientation (eg, 0°) and another 50 cycles are performed with a second angular orientation (eg, 180°).

Although embodiments of the present disclosure are described with reference to a first orientation and a second orientation, other embodiments are suitable for performing wafer processing using one or more orientations (e.g., 1, 2, 3, etc.) . The orientations may be separated by equal angles in one embodiment, or may be separated by unequal angles in another embodiment. Additionally, one or more cycles of wafer processing (eg, ALD, PECVD, etc.) are performed in each orientation. The number of cycles performed in each orientation may be distributed equally in one embodiment or unequally in another embodiment. That is, other embodiments are suitable where two or more sets of cycles at two or more relative angular orientations (e.g., between a lift pad and a pedestal), each set performing the same number of processing cycles (e.g., a cycle each includes an A-P-B-P sequence), or may include different numbers of processing cycles.

At 860, the method includes moving the lift pad and pedestal configuration to a downward position to remove the wafer from the assembly including the lift pad and pedestal configuration. In one embodiment, the pedestal is in its lowest downward position. As previously described, in a lift pad and pedestal configuration that includes a lift pin assembly, the lift pins may extend for wafer transfer. In a lift pad and pedestal configuration that does not include a lift pin assembly, the lift pad (e.g., smaller than the wafer) may be separated from the pedestal top surface by a sufficiently large displacement for entry of the end-effector arm for wafer transfer purposes. there is. As such, the wafer may be removed from the extended lift pins or the extended lift pad using the end-effector arm.

9A and 9B illustrate, in accordance with one embodiment of the present disclosure, a lift pad is approximately sized to match the wafer, includes rotation of the wafer without rotation of the pedestal within the process chamber during processing, and advantageously achieves chamber asymmetry and Figures illustrating a motion sequence of lift pad and pedestal configurations that filter out both pedestal asymmetry.

Specifically, Figure 9A illustrates the wafer size lift pad and pedestal configuration 400 first introduced in Figures 4 and 5A-5B. Lift pad and pedestal configuration 400 includes a pedestal 140', a lift pad 430, and a lift pin assembly including lift pins 557. In the delivery position, the lift pad and pedestal configuration 400 is configured such that the pedestal 140' is in a downward position with the lift pad resting on the pedestal. As shown by the dashed circle labeled “A,” lift pins 557 extend from the top surface of lift pad 430 for wafer transfer purposes. FIG. 9A also shows the lift pad and pedestal configuration 400 in the pre-coat position, where a pre-coat layer and an undercoat layer of film are deposited within the process chamber before the wafers are processed. As shown by the dashed circle labeled “B,” lift pad 430 rests on pedestal 140'. Additionally, lift pins 557 are positioned at the lift pad where pre-coat deposition is occurring and the upper ends of lift pins 557 are in the appropriate position during chamber pre-coat when the wafer is not on the lift pad and pedestal configuration 400. It is positioned to simply fill the holes corresponding to the pad shafts of 430 . FIG. 9A also illustrates a lift pad and pedestal configuration 400 of process positions where one or more films may be deposited during wafer processing (e.g., PECVD processes and ALD processes) in single-station systems and multi-station systems. . For example, wafer processing may implement an atomic layer deposition (ALD) process, also known as atomic layer chemical vapor deposition (ALCVD). ALD produces very thin films that are highly conformal, smooth, and possess excellent physical properties. As previously introduced, four operations are performed in one ALD cycle (eg, A-P-B-P sequence). As shown by the dashed circle labeled “C,” lift pad 430 rests on pedestal 140', and lift pins 557' are retracted into positions within the body of pedestal 140'. become (retreat). FIG. 9A also shows the lift pad and pedestal configuration 400 in a rotational position, with the pedestal in an upward position (e.g., a top upward position). As shown by the dashed circle labeled “D,” the lift pad 430 has a process rotational displacement from the pedestal 140′ such that the lift pad may be rotated in a second angular orientation relative to the pedestal 140′. separated as much as

FIG. 9B provides a more detailed description of FIG. 9A and, according to one embodiment of the present disclosure, the lift pad is approximately sized to match the wafer and facilitate rotation of the wafer without rotation of the pedestal within the process chamber during processing. 4 and 5A and 5B illustrate the motion sequence of the lift pad and pedestal configuration 400 introduced earlier, including and advantageously filtering out both chamber asymmetry and pedestal asymmetry.

In the delivery position, the lift pad and pedestal configuration 400 is configured such that the pedestal 140' is in a downward position with the lift pad 430 resting on the pedestal 140'. Specifically, the lift pad and pedestal configuration 400 is in a transfer position ready to receive and/or remove a wafer such that the lower end of the pedestal 140' is at a level within the corresponding chamber, indicated by line 901. Specifically, in one embodiment the pedestal 140' is at the lowest level, with the lower portion of the pedestal 140' at the level indicated by line 902, as well as the level indicated by line 903 associated with the process position, and line 904 associated with the rotation position. Below the pre-court position at the level indicated by . As shown, lift pad 430 rests on pedestal 140' as previously described. In addition, lift pins 557 extend beyond the top surface of lift pad 430 in a position to receive a wafer being transferred, for example, by an arm of the end-effector.

FIG. 9B shows the lift pad and pedestal configuration 400 at the pre-coat level, with the bottom of the pedestal 140' at a level within the corresponding chamber indicated by line 902. It is important to note that the pre-coat position may be defined as any position within the chamber and is not limited to the level indicated by line 902. For example, the pre-coat position may be the same as the process position, with the lift pad and pedestal configuration positioned for wafer processing (e.g., ALD, PECVD, etc.). As shown, lift pad 430 rests on pedestal 140' as previously described. Additionally, when pre-coat deposition is occurring and the wafer is not on the lift pad and pedestal configuration, the lift pins 557 are positioned such that the top of the lift pins only fills the holes with the lift pad 430, which Proper position during chamber pre-court.

Specifically, a pre-coat layer and an undercoat layer of the film are deposited within the process chamber before the wafers are processed. When included in a lift pad and pedestal configuration, this pre-coat and/or undercoat film may also coat the carrier rings and come into contact with the wafer. applying a pre-coat to the chamber and lift pad and pedestal structures (e.g., contact support structures such as MCAs), and an optional carrier ring having a pre-coat film similar to the film that will be formed on the wafer during processing. It is believed to improve film formation on the wafer. In this way, a pre-coat film is formed before the wafer is introduced onto the lift pad and pedestal configuration. In addition, the pre-coat, as well as any other undercoatings in the wafer processing atmosphere, act in combination for improved wafer film uniformity. For example, a typical undercoat thickness may be approximately 3 μm and a pre-coat thickness is approximately 0.5 μm.

FIG. 9B also shows a lift pad and pedestal configuration 400 in process positions on which one or more films may be deposited during wafer processing (e.g., PECVD processes and ALD processes) in single-station systems and multi-station systems. do. Specifically, the pedestal 140' is at a level within the corresponding chamber indicated by line 903. As shown, pedestal 140' is near the top position or level within the chamber. It is important to note that the process position may be defined as any position and/or level within the chamber, depending on the chamber and/or processes being implemented, and is not limited to the level indicated by line 903. As shown, lift pad 430 rests on pedestal 140' as previously described. In addition, the lift pins 557 are positioned such that the top of the lift pins is within the body of the pedestal 140', and the top may also be positioned anywhere within the pedestal 140' or lift pad 430. . Additionally, lift pad 430 is at a first angular orientation relative to pedestal 140'.

FIG. 9B also shows the lift pad and pedestal configuration 400 in a rotational position with the pedestal in the up position. In one embodiment, the bottom of the pedestal 140' is at the top level within the corresponding chamber, indicated by line 904. Lift pad 430 is separated from pedestal 140' by a process rotation displacement 940 (eg, approximately 1 mm). In one embodiment, the coupling mechanism elevates the lift pad 430 when the pedestal 140' is near the top of its travel such that the lift pad is separated by a rotational displacement 940 from the pedestal top surface. Specifically, when pedestal 140' reaches the top of its travel, for a certain distance "d" moved by pedestal 140', lift pad 430 may be a factor of "d". Move a greater distance. For example, when pedestal 140' reaches the top of its travel, lift pad 430 is separated from pedestal 140' by a rotational displacement 940, which is twice the distance "d". Lift pad 430 may then rotate, for example, from a first angular orientation to a second angular orientation relative to pedestal 140'. The lift pad and pedestal configuration 400 may then be returned to the process position for additional processing cycles or to the transfer position for wafer transfer.

9C illustrates a pedestal 140' of a lift pad and pedestal configuration 400 where the lift pad is approximately sized to a wafer during a first process sequence, a rotation sequence, and a second process sequence, according to one embodiment of the present disclosure. ) is a diagram illustrating the orientation of the lift pad 430 with respect to . Specifically, FIG. 9C shows configuration 400 performing a second number of processing cycles while lift pad and pedestal configuration 400 is in a process position for a first number of processing cycles while configuration 400 is in a rotation position. Illustrative are the relative orientations (e.g., with respect to each other and/or with respect to coordinate system 950 within the chamber) of lift pad 430 and pedestal 140' while in the process position for cycles.

As shown, during the first number of processing cycles, lift pad and pedestal configuration 400 is in the process position. Specifically, both lift pad 430 and pedestal 140' have an angular orientation of 0° with respect to coordinate system 950 within the chamber. Additionally, lift pad 430 has a first angular orientation of 0° relative to pedestal 140' (i.e., pedestal 140' provides a coordinate system).

Additionally, FIG. 9C illustrates the rotation of lift pad 430 relative to pedestal 140' when lift pad and pedestal configuration 400 is in a rotation position. Specifically, pedestal 140' remains static at an angular orientation of 0° (e.g., with respect to coordinate system 950) while lift pad 430 rotates 180° from a 0° angular orientation. do. That is, the pedestal 140' does not rotate. As shown, lift pad 430 is passing through an angular orientation of 71°.

Additionally, during the second number of processing cycles, the lift pad and pedestal configuration 400 is again in the process position. However, because of the rotation of the lift pad, pedestal 140' still has an angular orientation of 0° with respect to coordinate system 950 within the chamber, and the lift pad has an angular orientation of 180°. In other words, when processing a first number of cycles, lift pad 430 has an angular orientation of 0° with respect to pedestal 140', and when processing a second number of cycles, lift pad ( 430) has an angular orientation of, for example, 180° with respect to the pedestal 140' after rotation.

10A-10C illustrate a method in which the lift pad is smaller than the wafer, includes rotation of the wafer without rotation of the pedestal within the process chamber during processing, and advantageously filters out both chamber asymmetry and pedestal asymmetry, according to one embodiment of the present disclosure. , drawings illustrating the motion sequence of the lift pad and pedestal configuration. More specifically, FIG. 10B illustrates the lift pad and pedestal configuration 600 previously introduced in FIGS. 6 and 7A-7B. FIG. 10C shows the lift pad and pedestal configuration 600' first introduced in FIG. 7C and additionally including a lift pin assembly.

Specifically, FIG. 10A shows a lift pad and pedestal configuration 600, including a pedestal 140'' and a lift pad 630. Lift pad and pedestal configuration 600 is configured such that lift pad 630 provides lifting operation and eliminates the need for lift pin assemblies. Specifically, in the delivery position, lift pad and pedestal configuration 600 holds lift pad 630 separated from pedestal 140'' by a sufficiently large displacement for pedestal 140'' to allow entry of the end-effector arm. It is configured to be in a downward position. FIG. 10A illustrates a lift pad and pedestal configuration 600 of process positions where one or more films may be deposited during wafer processing (e.g., PECVD processes and ALD processes) in single-station systems and multi-station systems. 10A shows pedestal 140'' in an upward position (e.g., topmost upward position) and lift pad 630 separated from pedestal 140'' by a process rotation displacement (e.g., 1 mm). A lift pad and pedestal configuration 600 in a rotational position is shown.

FIG. 10B provides a more detailed description of FIG. 10A and provides a more detailed description of FIG. 10A, in accordance with one embodiment of the present disclosure, where the lift pad is smaller than the wafer and includes rotation of the wafer without rotation of the pedestal within the process chamber during processing, and advantageously moves the chamber Illustrative is a motion sequence of lift pad and pedestal configuration 600 that filters out both asymmetry and pedestal asymmetry.

In the delivery position of the lift pad and pedestal configuration, the lower end of the pedestal 140'' is at a level within the corresponding chamber, indicated by line 901. Specifically, pedestal 140'' is at the bottom level in one embodiment. In one embodiment, the delivery position is lower than the pre-court position shown by line 902, as well as the process position shown by line 903, and the rotation position shown by line 904. As shown, the lift pad 630 has sufficient padding to allow the arm of the end-effector to transfer (place onto the lift pad 630, remove the wafer from the lift pad 630), as shown in FIG. 10B. It is separated from the lift pad 140'' by a displacement 969. In one embodiment, the coupling mechanism elevates the lift pad 630 when the pedestal 140'' is near the top of its travel such that the lift pad 630 separates from the pedestal top surface by a displacement 969.

FIG. 10B also shows the lift pad and pedestal configuration 600 in the pre-coat position, where the pre-coat layer and undercoat layer of the film are deposited in the process chamber before the wafers are processed. In the pre-court position, the lower end of the pedestal 140'' is at a level within the corresponding chamber, indicated for example by line 902. The pre-court position may be defined as any position within the chamber and is not limited to the level indicated by line 902. As shown, lift pad 630 rests on pedestal 140'' as previously described.

In the process position of lift pad and pedestal configuration 600, the lower end of pedestal 140'' is at a level within the corresponding chamber indicated by line 903. In one embodiment, the pedestal 140'' is at or near the top position within the chamber, although the process position may be at any level within the chamber depending on the chamber and/or processes implemented, as previously described. there is. As shown, lift pad 630 rests on pedestal 140''. Additionally, lift pad 630 is at a first angular orientation relative to pedestal 140''.

In the rotational position of the lift pad and pedestal configuration 600, in one embodiment the lower portion of the pedestal 140 is at the uppermost level within the corresponding chamber, indicated by line 904. Lift pad 630 is separated from pedestal 140'' by a process rotation displacement 1040 (e.g., approximately 1 mm). In one embodiment, the coupling mechanism lifts through the pad shaft 560 when the pedestal 140'' is near the top of its travel such that the lift pad 630 is separated from the pedestal top surface by a rotational displacement 1040. Raise pad 630. In one embodiment, a coupling mechanism elevates the lift pad 630 when the pedestal 140'' is near the top of its travel such that the lift pad 630 is separated from the pedestal top surface by a rotational displacement 1040. . For example, as pedestal 140'' reaches the top of its travel, for a particular distance "f" moved by pedestal 140'', lift pad 630 is moved by a factor of "f" (e.g. moves a greater distance, which may be twice "f"). Lift pad 630 may then be rotated from the first angular orientation to a second angular orientation (e.g., relative to pedestal 140'') and then returned to the process position for additional processing cycles. (return) or returns to the transfer position for wafer transfer.

FIG. 10C provides more detailed descriptions of FIG. 10A and shows that the lift pad 630 is smaller than the wafer and lifts the wafer without rotation of the pedestal 140''' within the process chamber during processing, according to one embodiment of the present disclosure. illustrates a motion sequence of a lift pad and pedestal configuration 600', including a lift pin assembly, which includes rotation of and advantageously filters both chamber asymmetry and pedestal asymmetry. As previously described, lift pad and pedestal configuration 600' includes lift pad 630, pedestal 140''', and lift pin assembly.

In the delivery position of the lift pad and pedestal configuration 600', the lower end of the pedestal 140''' is at a level within the corresponding chamber, indicated by line 901. Specifically, in one embodiment the pedestal 140''' is at the bottom level. In one embodiment, the delivery position is lower than the pre-court position shown by line 902, as well as the process position shown by line 903, and the rotation position shown by line 904. As shown, lift pad 630 rests on pedestal 140''' as previously described. In addition, lift pins 557' are positioned on the pedestal 140''' and lift, for example, to receive a wafer being transferred by an arm of the end-effector or for removal of a wafer by the end-effector. It extends beyond the top surface of pad 630.

FIG. 10C also shows the lift pad and pedestal configuration 600' in the pre-coat position, where a pre-coat layer and an undercoat layer of film are deposited within the process chamber before the wafers are processed. In the pre-court position, the lower part of the pedestal 140''' is at a level within the corresponding chamber, indicated for example by line 902. The pre-court position may be defined as any position within the chamber and is not limited to the level indicated by line 902. As shown, lift pad 630 rests on pedestal 140''' as previously described. Additionally, when pre-coat deposition is occurring and the wafer is not on the lift pad and pedestal configuration, the lift pins 857 are positioned such that the top of the lift pins only fills the holes with the lift pad 830, which Proper position during chamber pre-court.

In the process position of the lift pad and pedestal configuration 600', the lower end of the pedestal 140''' is at a level within the corresponding chamber, indicated by line 903. As shown, although the process position may be at any level within the chamber, pedestal 140''' is near the top position or level within the chamber as previously described. As shown, lift pad 630 rests on pedestal 140''' as previously described. Additionally, the lift pins 557' are positioned such that their upper ends are within the pedestal 140''', although the upper end may also be positioned anywhere within the pedestal 140'''.

In the rotational position of the lift pad and pedestal configuration 600, in one embodiment the lower portion of the pedestal 140''' is at the uppermost level within the corresponding chamber, indicated by line 904. Lift pad 630 is separated from pedestal 140''' by a process rotation displacement 1040 (e.g., approximately 1 mm). In one embodiment, the coupling mechanism engages the pad shaft 560' when the pedestal 140''' is near the top of its travel such that the lift pad 630 separates from the pedestal top surface by a rotational displacement 1040. Raise the lift pad 630 through. In one embodiment, a coupling mechanism elevates the lift pad 630 when the pedestal 140''' is near the top of its travel such that the lift pad 630 is separated from the pedestal top surface by a rotational displacement 1040. I order it. For example, as pedestal 140''' reaches the top of its travel, for a particular distance "f" moved by pedestal 140''', lift pad 630 moves by a factor of "f". Move a larger distance, which may be (e.g., twice "f"). Lift pad 630 may then be rotated from a first angular orientation to a second angular orientation (e.g., relative to pedestal 140''') and then into the process position for additional processing cycles. Returns, or is returned to the transfer position for wafer transfer.

10D illustrates a pedestal 140'' in a lift pad and pedestal configuration 600 where the lift pad 630 is smaller than the wafer during a first process sequence, a rotation sequence, and a second process sequence, according to one embodiment of the present disclosure. ) or relative to the pedestal 140''' of a lift pad and pedestal configuration 600'. Specifically, Figure 10D shows a lift pad and pedestal configuration 600/600' while in the process position for a first number of processing cycles, a rotation position for a second number of processing cycles, or a lift pad and pedestal configuration 600/600' while in the process position. Illustrative are the relative orientations of pad 630 and pedestal 140''/pedestal 140''' (e.g., relative to each other and/or relative to coordinate system 1050 within the chamber).

As shown, during the first number of processing cycles, the lift pad and pedestal configuration 600/600' is in the process position. Specifically, both lift pad 630 and pedestal 140''/140''' have an angular orientation of 0° with respect to the coordinate system 1050 of the chamber. Additionally, lift pad 630 has a first angular orientation of 0 degrees relative to pedestal 140''/140''' (i.e., pedestal 140''/140''' provides the coordinate system).

Additionally, FIG. 10D illustrates the rotation of lift pad 630 relative to pedestal 140''/140''' when lift pad and pedestal configuration 600/600' is in the rotation position. Specifically, while lift pad 630 rotates 180° from an angular orientation of 0°, pedestal 140''/140''' is rotated at 0° (e.g., with respect to coordinate system 1050). It remains fixed in angular orientation. That is, pedestals 140'' and 140''' do not rotate. As shown, lift pad 630 is passing through an angular orientation of 71°.

Additionally, during the second number of processing cycles, the lift pad and pedestal configuration 600/600' is again in the process position. However, because of the rotation of the lift pad, the pedestal 140''/140''' still has an angular orientation of 0° with respect to the coordinate system 1050 within the chamber, and the lift pad has an angular orientation of 180°. In other words, when processing in the first number of cycles, lift pad 630 has an angular orientation of 0° with respect to pedestal 140''/140''', and in the second number of cycles. When processing, the lift pad 630 has an angular orientation of 180° with respect to the pedestal 140''/140''' after rotation, for example.

lift pad raising mechanism

According to embodiments of the present disclosure, the lift pad raising mechanism disclosed in FIGS. 11-17 generally applies to the lift pad and pedestal configuration previously introduced in FIGS. 1-10. That is, various embodiments of the disclosed lift pad raising mechanism include a lift pad having a diameter smaller than the diameter of the wafer and/or a lift pad having a diameter sized to approximately match the diameter of the wafer, and a pedestal configuration. Implemented for separation of the lift pad from.

11A is a perspective view of a substrate processing system including a lift pad and pedestal configuration 1100, in accordance with one embodiment of the present disclosure, with a short stroke pad lift configured to separate the lift pad (not shown) from the pedestal 140-A. Mechanism 440-A is illustrated. The lift pad and pedestal configuration 1100 is located within the main frame 1105, which is positioned into the processing chamber (eg, fixed within the processing chamber). The movement of the pedestal 140-A is provided relative to the main frame, and the movement of the lift pad is provided for the main frame 1105 (which moves with the pedestal 140-A) and the pedestal 140-A (which moves with the pedestal 140-A). a) is separate from) is provided for all. Separation of the lift pad from the pedestal 1140-A may be enabled for the purpose of rotating the lift pad (and the wafer placed thereon) relative to the pedestal 140-A. Lift pad separation may also be enabled to allow access by the end-effector for wafer transfer (eg, wafer placement or removal from the lift pad).

Lift pad and pedestal configuration 1100 including short stroke pad raising mechanism 440-A may be configured in embodiments such as the lift pad and pedestal configurations shown in FIGS. 4, 5A-5C, and 9A-9C. , is configurable to support a lift pad having substantially similar dimensions to the wafer (eg, such as lift pad and diameter sizes substantially similar to the wafer). Additionally, lift pad and pedestal configuration 1100 including short stroke pad lift mechanism 440-A is shown in FIGS. 6 and 7A-7F, and 10A-10D, according to embodiments of the present disclosure. Like other lift pad and pedestal configurations, they are configurable to support a lift pad that is smaller than a wafer (e.g., where the diameter of the lift pad is smaller than the diameter of the wafer). In some embodiments, lift pad and pedestal configuration 1100 allows integration with a carrier ring assembly (not shown). In still other embodiments, lift pad and pedestal configuration 1100 may be implemented within a single-station and/or multi-station processing tool.

The pedestal 140-A of the lift pad and pedestal configuration 1100 may be configured such that movement of the pedestal 140-A is performed by the pedestal and lift pad actuator 515' of FIGS. 7B and 7C and/or the pedestal and lift pad of FIG. 5B. It may be controlled by the pedestal controller 450 of FIGS. 4 and 6 to be implemented via an actuator 515 . In particular, the central shaft 510-A is interconnected to the pedestal 140-A and the pedestal bracket 1101 such that the movement of the pedestal bracket relative to the main frame 1105 is converted to the movement of the pedestal 140-A. . For example, the pedestal control 450 may control the pedestal control via the central shaft 510-A (e.g., of the central axis 471-A shown in FIG. 14C) during pre-processing, processing, and post-processing sequences. Up and down) Controls the movement of the pedestal bracket to induce the movement of the pedestal (140-A). In particular, the Z-motor 445-A is configured to convert the rotation of the ballscrew into a movement (e.g., in the z-direction) of the carrier parallel to the central axis 471-A (e.g., FIG. 4 is configured to drive a ball screw (not shown), which is interconnected to a slide/carrier (not shown) via a ball screw nut (such as the ball screw 443 of). Z-motor 445-A and ball screw (and other corollary components) remain fixed relative to main frame 1105 such that movement of the carrier occurs relative to main frame 1105. do. Additionally, the pedestal bracket 1101 is interconnected to the carrier such that the movement of the carrier is converted into the movement of the pedestal bracket 1101. The bellows (420-A) facilitates the movement of the pedestal (140-A).

The lift pad in the lift pad and pedestal configuration 1100 is configured such that movement of the lift pad is implemented via the pedestal and lift pad actuator 515' of FIGS. 7B and 7C and/or the pedestal and lift pad actuator 515 of FIG. 5B. , may be controlled by the lift pad control unit 455 of FIGS. 4 and 6. In particular, the lift pad control unit 455 controls the movement of the lift pad shaft 560-A to induce movement within the lift pad. In particular, pad shaft 560-A extends from the lift pad along central axis 471-A, as shown in Figure 13C. For example, pad shaft 560-A is interconnected to a ferroseal assembly 425-A, which is interconnected to a pedestal bracket via a short stroke lift pad raising mechanism 440-A. Lifting mechanism 440-A is first introduced in FIG. 4 and is further shown in FIG. 7A as a short stroke engagement mechanism 440 configured to provide movement of the lift pad relative to pedestal 140-A. The ferroseal assembly 425-A is movably attached to the pedestal bracket 1101 via a short stroke pad lift mechanism 440-A. In this way, the movement of the pedestal bracket 1101 is converted to the movement of the pedestal 140-A and lift pad combined as described above. In particular, movement of the pedestal bracket 1101 that is not engaged with the short stroke lift pad raising mechanism 440-A ensures that separation does not occur between the lift pad and pedestal 140-A, and the pedestal 140-A and Provides exercise on the lift pad. When the lift pad raising mechanism 440-A engages, additional movement is made by the lift pad relative to the pedestal 140-A to induce separation. Ferroseal assembly 425-A includes a short stroke bellows configured to facilitate movement of the lift pad through the pad shaft. The ferroseal assembly 425-A is configured to provide a vacuum seal around the pad shaft while the pad shaft 560-A is rotating and while the pad shaft 560-A is not rotating. .

Additionally, the ferroseal assembly 425-A facilitates rotation in a vacuum environment of the lift pad shaft 560-A housed therein. For example, the ferroseal assembly 425-A may be in a belt-pulley device configured for rotation of the lift pad shaft 560-A, and correspondingly for rotation of the lift pad relative to the pedestal 140-A. Includes rotation/theta motor (427-A). Electrical slip ring 1125 is configured to provide transmission of power and/or electrical signals through lift pad shaft 560-A configured for rotation.

Additionally, the lift pad and pedestal configuration 1100 includes an upper bearing assembly 755-A (first introduced in FIG. 7D as hot bearing 755 and discussed more fully in conjunction with FIGS. 16 and 17) and a lower bearing assembly. Includes (1120). Upper bearing assembly 755-A and lower bearing assembly 1120 are configured to center lift pad shaft 560-A within center shaft 510-A.

FIG. 11B is a perspective view of the substrate processing system of FIG. 11A including a lift pad and pedestal configuration 1100 in accordance with one embodiment of the present disclosure, further illustrating components of a short stroke pad lift mechanism 440-A. In particular, pad lifting mechanism 440-A includes an upper hard stop 1210 and a lower hard stop 1211 that are both fixed relative to the main frame 1105. The bracket rollers (1221, 1222) are such that the movement of the slide/carriage (not shown) interconnected with the ball screw (not shown) in the Z-direction corresponds to the movement of the corresponding bracket rollers (1221, 1222) in the Z-direction. It is fixed to the pedestal bracket so that it can be converted to . The movement of short stroke pad lift mechanism 440-A is more fully described with respect to FIGS. 12-13.

The short stroke pad raising mechanism 440-A, when not in the neutral position, provides simultaneous movement of the lift pad and pedestal 140-A to prevent separation between the lift pad and pedestal 140-A. It is configured to provide. In the neutral position, upper hard stop 1210 and lower hard stop 1221 are not engaged (e.g., using lever 1225) and lever 1225 is engaged with bracket rollers 1221, 1222. ) is loosely bound between.

Meanwhile, when the lift pad raising mechanism 440-A engages, additional movement is effected against the pedestal 140-A by the lift pad to induce separation between the lift pad and the pedestal 140-A. In particular, lever 1225 engages upper hard stop 1210 to direct movement of the lift pad relative to pedestal 140-A, thereby providing rotation of the lift pad relative to pedestal 140-A. do. Additionally, lever 1225 engages lower hard stop 1211 to direct movement of the lift pad relative to pedestal 140-A to allow entry and exit of the end-effector for wafer transfer purposes. Additionally, the pivoting yoke 1240 absorbs the moment placed on the upper and lower bearings of the pad shaft 560-A due to the operation of the lift pad raising mechanism 440-A. configured to offset and/or offset. In particular, lift pad raising mechanism 440-A is configured to repeatedly disengage the lift pad relative to pedestal 140-A in a manner that maximizes the life of each of the components. For example, without any moment offset or offset, the bearing assemblies on pad shaft 560-A (e.g., high temperature bearing 755-B) will fail prematurely. As such, the various yoke assemblies implemented within the lift pad raising mechanism 440-A are configured to offset and/or offset the moment applied to the bearings of the pad shaft 560-A due to the lifting of the lift pad to minimize wear. Consists of.

FIG. 12A is a perspective view of a short stroke lift pad lift mechanism 440A of a substrate processing system including the lift pad and pedestal configuration 1100 of FIGS. 11A-11B according to one embodiment of the present disclosure. Lift pad and pedestal configuration 1100, including short stroke pad lift mechanism 440-A, is configured to support a lift pad that is substantially similar in size (e.g., in diameter) to the wafer, or is positioned higher than the wafer (e.g., It is configurable to support a lift pad that is smaller in size (e.g., in diameter).

In one embodiment, lift pad raising mechanism 440A, shown in Figure 12A, is configured to raise the lift pad for rotation relative to pedestal 140-A through engagement with upper hard stop 1210, and It is configured to raise the lift pad for entry of the end-effector into the pedestal (140-A) through engagement with the lower hard stop 1211. In other embodiments, lift pad and pedestal configuration 1100 may be modified to provide one of the lift pad raising operations provided by short stroke lift pad raising mechanism 440A. For example, lift pad raising mechanism 440A may be modified to include only an upper hard stop 1210 to raise the lift pad for rotation relative to pedestal 140-A. In this case, a lift pin assembly may be configured within the lift pad and pedestal configuration 1100 to enable entry of the end-effector.

As shown in FIG. 12A, lift pad and pedestal configuration 1100 is located within main frame 1105, which is positioned within the processing chamber (e.g., as fixed within the processing chamber). . The upper hard stop 1210 and lower hard stop 1211 are fixed relative to the main frame 1105. For example, the upper hard stop 1210 may be affixed directly to the main frame 1105, or through one or more components in between. In particular, main frame extension 1106 is attached to main frame 1105 and both upper hard stop 1210 and lower hard stop 1211 are attached to main frame extension 1106. In this way, the upper hard stop 1210 and lower hard stop 1211 do not move relative to the main frame 1105.

Lift pad and pedestal configuration 1100 includes pedestal brackets 1101 movably interconnected to main frame 1105 via slide/carriage and ball screw/Z-motor 445-A devices as described above. do. For example, pedestal bracket 1101 is attached (e.g., via bellows 420-A) to center shaft 510-A of pedestal 140-A, and ball screw/Z-motor 445 Any movement of the pedestal bracket 1101 induced by the operation of -A) is converted to movement within the pedestal 140-A. Additionally, the slide 1235 is fixed relative to the pedestal bracket 1101. In this way, the slide 1235 moves with the pedestal bracket 1101 in the Z-direction on the same straight line.

Pedestal bracket extensions 1231/1232 are fixed relative to pedestal bracket 1101. For example, pedestal bracket extensions 1231/1232 may be attached directly to pedestal bracket 1101. Additionally, the bracket roller 1221 is attached to the pedestal bracket extension portion 1231. Additionally, the bracket roller 1222 is attached to the pedestal bracket extension 1232. In this way, the bracket rollers 1221/1222 move together with the pedestal bracket 1101 in the Z-direction on the same straight line.

Lift pad and pedestal configuration 1100 includes a lift pad bracket 1230 movably attached to a slide 1235. Since the slide 1235 is fixed relative to the pedestal bracket 1101, any movement in the pedestal bracket 1101 is converted to the same movement of the slide 1235 in the linear Z-direction. Additionally, because the lift pad bracket 1230 is movably attached to the slide 1235, the lift pad bracket 1230 is attached to the pedestal (e.g., to guide separation of the lift pad from pedestal 140-A). There may be additional movement for the bracket 1101. The interface between the pedestal bracket 1101, slide 1235, and lift pad bracket 1230 is more fully described in FIG. 13.

Lift pad and pedestal configuration 1100 includes a yoke 1240 rotatably attached to a lift pad bracket 1230. Yoke 1240 is positioned when the short stroke lift pad lifting mechanism 440-A is engaged (e.g., when lever 1225 is engaged with upper hard stop 1210 or lower hard stop 1211). when) interfaces with the ferroseal assembly (425-A) via rollers (1255/1256). The ferroseal assembly 425-A first introduced in FIGS. 4-6 includes connector arms 1251/1252 located on opposite sides of the ferroseal assembly 425-A. Roller 1255 is attached to one end of connector arm 1251, and roller 1256 is attached to connector arm 1252 such that rollers 1255/1256 are located on opposite sides of ferroseal assembly 425-A. It is attached to one end of the. The yoke 1240 may be configured to offset and/or cancel the moment applied to the pad shaft 560-A when the pad raising mechanism 440-A is actuated to separate the lift pad from the pedestal 140-A. You can. The interface between the yoke and ferroseal assembly 425-A is more fully described in FIG. 13.

The lift pad and pedestal configuration 1100 includes a lever 1225 that is rotatably attached to the lift pad bracket 1230 via a pin 1226. As such, any movement of pin 1226 translates into similar movement of pedestal bracket 1101 and ferroseal assembly 425-A relative to pedestal 140-A. For example, movement of pin 1226 is induced through engagement between either upper hard stop 1210 or lower hard stop 1211 and lever 1225. Correspondingly, any movement of pin 1226 translates into similar movement of pad shaft 560-A and attached lift pad relative to pedestal 140-A. The interface between pin 1226, lever 1225, lift pad bracket 1230, ferroseal chamber assembly 425-A, and pad shaft 560-A is more fully described in FIGS. 13 and 14A-14D. It will be.

FIG. 12B is a diagram illustrating a motion sequence of the short stroke pad raising mechanism 440-A of the lift pad and pedestal configuration 1100 of FIGS. 11A and 11B and 12A, according to one embodiment of the present disclosure. According to one embodiment, the short stroke pad lift mechanism 440-A adjusts the diameter of the lift pad to be greater than the diameter of the wafer such that the lift pad may be lifted to allow rotation of the lift pad relative to the pedestal 140-A. A small lift pad and pedestal configuration 1100 may be implemented and may provide lifting of the lift pad to allow entry of an end-effector for wafer transfer purposes. In another embodiment, the short stroke pad lifting mechanism 440-A may be configured to adjust the diameter of the lift pad to be equal to the diameter of the wafer such that the lift pad may be lifted to allow rotation of the lift pad relative to the pedestal 140-A. It may also be implemented within a lift pad and pedestal configuration 1100 that is approximately the same size. In this case, wafer transfer may be accomplished via a lift pin assembly.

The lift pad and pedestal configuration 1100 is shown at 1203 with the short stroke lift pad raising mechanism 440-A positioned in a neutral position. When the short stroke lift pad raising mechanism 440-A is not engaged within the neutral position and is configured to provide simultaneous movement of the lift pad and pedestal 140-A, the lift pad is configured to move the lift pad and pedestal (140-A). 140-A) is supported on the pedestal 140-A with a pedestal referencing force (e.g., approximately 15 pounds when the chamber is at atmospheric pressure and approximately 1 pound during processing) to prevent separation between the chambers. . For example, the pedestal reference force may be applied in part (e.g., through spring constants) such that the lift pad is constantly referenced to the pedestal when the pad lift mechanism 440-A is in the neutral position. The force is applied through the springs (as well as the weight of the ferroseal assembly 425-A), and the pad shaft 560-A. Because theta motor 427-A is offset from pad shaft 560-A, springs 1411 absorb all the moment induced by theta motor 427-A operating on pad shaft 560-a. Used to offset and/or compensate.

More specifically, when the pad raising mechanism 440-A is in the neutral position, the lever 1225 rotatably attached to the pin 1226 is both connected to the upper hard stop 1210 fixed relative to the main frame 1105. ) or lower hard stop 1211. That is, the lever 1225 is loosely constrained between the bracket rollers 1221 and 1222, which are both fixed relative to the pedestal bracket 1101, and moves with a slide/carrier movably attached to the ball screw. Likewise, when the short stroke pad lifting mechanism 440-A is in the neutral position, the pin 1226 moves with the pedestal bracket 1101 and lifts the pin 1226 through the operation of the Z-motor 445-A and the ball screw. Any movement within the pedestal bracket 1101 is converted to simultaneous movement of the lift pad and pedestal 140-A. For example, as the pedestal 140-A moves with the pedestal bracket 1101 attached to the slide/carrier in response to the ball screw, the lift pad rests on the pedestal so that the lift pad moves along the pedestal 140-A. moves with

Meanwhile, when the lift pad raising mechanism 440-A engages, additional movement is effected against the pedestal 140-A by the lift pad to induce separation between the lift pad and the pedestal 140-A. In particular, states 1204, 1205 of lift pad and pedestal configuration 1100 include an upper hard stop (e.g., roller-like) that separates the lift pad from pedestal 140-A to allow rotation of the lift pad. (1210) shows engagement. Conditions 1201, 1202 of the lift pad and pedestal configuration 1100 may be configured to separate the lift pad from the pedestal 140-A to allow entry of the end-effector arm for the purpose of wafer transfer (e.g., roller (same) shows the engagement of the lower hard stop 1211.

In state 1204 of lift pad and pedestal configuration 1100, short stroke lift pad raising mechanism 440-A begins to engage upper hard stop 1210. Specifically, the pedestal bracket 1101 approaches the topmost as it moves upward in the Z-direction. As shown, the lift pad and pedestal configuration 1100 is near the top position as it moves upward in the Z-direction relative to the main frame 1105. That is, lever 1225 moves pedestal 140-A and pedestal bracket 1101 upward (e.g., when pedestal 140-A is near the uppermost position) and engages upper hard stop 1210. Starting to engage. As such, pad lift mechanism 440-A is about to leave, or is beginning to leave, its neutral state.

In state 1205, lift pad and pedestal configuration 1100 is configured to lift pedestal 140-A and lift via upward movement of the pedestal to accommodate rotation of the lift pad through operation of short stroke pad raising mechanism 440-A. It is configured to raise the lift pad (e.g. about 1 mm) to cause separation between the pads. In particular, short stroke lift pad raising mechanism 440-A is fully engaged with upper hard stop 1210. That is, the pedestal 140-A and the pedestal bracket 1101 continue to move upward until the pedestal bracket 1101 reaches the uppermost position. In this case, lever 1225 is fully engaged with upper hard stop 1210 and lever 1224 is fully rotated about pin 1226. That is, a downward force is applied to the lever 1225 by the upper hard stop 1210 and the bracket roller 1222 to induce a (e.g. clockwise) rotation of the lever 1225 relative to the pin 1226. An upward force is applied to the lever 1225 by . Because the lever is rotatably fixed to pin 1226 and the pin is moveably attached to slide 1235 (which is fixed relative to pedestal bracket 1101), rotation of lever 1225 is relative to pedestal 140-A. and linear motion (Z-direction) within the pin 1226 relative to the pedestal bracket 1101. Additionally, because the force generated (from the lever interaction between upper hard stop 1210 and bracket roller 1222) is relatively close to pin 1225, the linear motion of pin 1226 is small (e.g. , approx. 1 mm). Furthermore, the linear motion of pin 1226 is more fully described with respect to FIGS. 14A-14D and is coupled to ferroseal assembly 425-A and yoke ( Through interaction with 1240), it is converted to linear motion of the pad shaft (560-A).

In state 1201 of lift pad and pedestal configuration 1100, short stroke lift pad raising mechanism 440-A begins to engage lower hard stop 1211. Specifically, the pedestal bracket 1101 approaches the bottommost as it moves downward in the Z-direction. As shown, the lift pad and pedestal configuration 1100 is near the bottommost position while moving downward in the Z-direction relative to the main frame 1105. That is, the lever 1225 moves the pedestal 140-A and the pedestal bracket 1101 downward (e.g., when the pedestal 140-A is near the lowest position) and engages the lower hard stop 1211. Starting to engage. As such, pad lift mechanism 440-A is about to leave, or is beginning to leave, its neutral position.

In state 1202, lift pad and pedestal configuration 1100 moves the lift pad through downward movement of the pedestal to facilitate entry of the end-effector for wafer transfer through operation of short stroke pad lift mechanism 440-A. and pedestal 140-A to raise the lift pad (e.g., about 14 to 18 mm). In particular, short stroke lift pad raising mechanism 440-A fully engages lower hard stop 1211. That is, the pedestal 140-A and the pedestal bracket 1101 continue to move downward until the pedestal bracket 1101 reaches the lowest position. In this case, lever 1225 is fully engaged with lower hard stop 1211 and lever 1225 is fully rotated about pin 1226. That is, an upward force is applied to the lever 1225 by the lower hard stop 1211 and the bracket roller 1221 to induce a (e.g. clockwise) rotation of the lever 1225 relative to the pin 1226. A downward force is applied to the lever 1225 by . Because the lever is rotatably fixed to pin 1226 and the pin is moveably attached to slide 1235 (which is fixed relative to pedestal bracket 1101), rotation of lever 1225 is relative to pedestal 140-A. and linear motion (Z-direction) within the pin 1226 relative to the pedestal bracket 1101. Because the resulting force (from the lever interaction with bracket roller 1221 and lower hard stop 1211) is relatively far from pin 1226, the linear movement of pin 1226 (e.g., about 14 to 18 mm) becomes larger (significantly). Furthermore, linear motion within the pin 1226 is more fully described with respect to FIGS. 14A-14D and causes separation between the lift pad and pedestal 140-A, the ferroseal assembly 425-A and the yoke ( Through interaction with 1240), it is converted to linear motion of the pad shaft (560-A).

FIG. 13 is a perspective view of the short stroke lift pad raising mechanism 440-A of FIG. 12A, and more specifically, a yoke that provides movement of the lift pad relative to the pedestal 140-A according to an embodiment of the present disclosure. The interface between 1240) and slide 1235 is shown. In particular, the slide 1235 is fixed relative to the pedestal bracket 1101. For example, slide 1235 may be attached directly to pedestal bracket 1101 or may be attached via one or more intermediary components, e.g., to a pedestal bracket extension 1233 that may be attached directly to pedestal bracket 1101. It can also be attached through. Any linear movement within the pedestal bracket 1101 (e.g., in the Z-direction) is converted to a similar movement of the slide 1235 (e.g., in the Z-direction).

Additionally, lift pad bracket 1230 is movably attached to slide 1235. When the short stroke lift pad raising mechanism 440-A is in the neutral position, the lift pad bracket 1230 is aligned with the slide 1235 to prevent relative movement between the lift pad bracket 1230 and the pedestal bracket 1101. move together Any linear movement within the pedestal bracket 1101 (e.g., in the Z-direction) is converted to a similar movement of the lift pad bracket 1230 (e.g., in the Z-direction). On the other hand, when the pad lifting mechanism 440-A is engaged with either the upper hard stop 1210 or the lower hard stop 1211, the lift pad bracket is moved to the pedestal bracket through the action of the slide 1235. 1101) moves upward. 13 also illustrates a yoke 1240 rotatably attached to a lift pad bracket 1230 via a pin 1226.

14A is a perspective view of the lift pad raising mechanism 440-A of FIG. 12A, and more specifically the ferroseal assembly 425-A that provides movement of the lift pad relative to the pedestal, according to one embodiment of the present disclosure. and yoke 1240. In particular, the yoke 1240 is rotatably attached to the lift pad bracket 1240 via a pin 1226. Yoke 1240 is configured to interface with ferroseal assembly 425-A. In this way, any movement of pin 1226 is transferred to lift pad bracket 1240, which then transfers to yoke 1240, which then transfers to ferroseal assembly 425-A. In particular, any linear motion of yoke 1240 is also converted to similar linear motion of lift pad and pad shaft 560-A through ferroseal assembly 425-A.

Figure 14B is a perspective view of yoke 1240 interfacing with ferroseal assembly 425-A according to one embodiment herein. The yoke 1240 is rotatably attached to the lift pad bracket 1230 via a pin 1247. As shown, the yoke base is rotatably attached to the lift pad bracket 1230. Yoke arm 1246 extends from yoke base 1245. Additionally, both the yoke fork extension 1241 and the yoke fork extension 1242 extend from the yoke arm 1246. More specifically, FIG. 14B shows connector arms of a ferroseal assembly of lift pad raising mechanism 440-A of FIG. 13A that provides movement of the lift pad relative to pedestal 140-A in accordance with one embodiment of the present disclosure. 1251/1252) and yoke fork extensions 1241/1242. In particular, the upward movement of the yoke 1240 engages the rollers 1255/1256 to the yoke fork extensions 1241/1242. That is, the yoke fork extension 1241 engages the roller 1255 attached to the ferroseal connector arm 1251, and the yoke fork extension 1242 engages the roller 1256 attached to the ferroseal connector arm 1252. ) and engage with. When the pad lift mechanism 440-A is engaged (e.g., through engagement of the yoke fork extensions 1241/1242 with rollers 1255/1256), the ferroseal assembly 425- A) Because the yoke 1240 is fixed to the pad shaft 560-A, and the pin 1226 is fixed to the yoke 1240 (e.g., the lever 1225 is positioned at the upper hard stop When pin 1226 undergoes linear motion relative to pedestal bracket 1101 and pedestal 140-A in the Z-direction (such as when engaging with either part 1210 or lower hard stop 1221) , which translates into linear motion in the Z-direction of the pad shaft 560-A to create separation between the lift pad and pedestal 140-A.

Additionally, the pivoting yoke 1240 is configured to offset and/or cancel the moment applied to the upper and lower bearings of the pad shaft 560-A due to operation of the lift pad raising mechanism 440-A. . In particular, the yoke 1240 pivots about the pin 1247 so that the moment applied to the upper and lower bearings of the pad shaft 560-A is insignificant or no moment. It is configured to balance forces along axis 471-A. That is, by offsetting and/or canceling out the moment applied to the upper and lower bearings of the pad shaft 560-A, to the ferroseal assembly 425-A through each of the connector arms 1251/1252. Contact is made by the yoke 1240 via the forked extensions 1241/1242 with equal force on the rollers 1255/1256, which are fixed relative to each other.

14C is a perspective view of a clamping mechanism providing linkage between components of a ferroseal assembly 425-A and a pad shaft 560-A extending from a lift pad, according to one embodiment of the present disclosure. . As such, any linear motion (e.g., in the Z-direction) of the ferroseal assembly 425-A converts to a similar linear motion (e.g., in the Z-direction) of the lift pad. In particular, clamp 1430 extending from disk 1420 and the lowermost end of disk 1440 ferroseal assembly 425-A. Clamp 1430 clamps to pad shaft 560-A such that the rotation of any disk 1440 is converted to rotation of pad shaft 560-A. For example, rotation of disk 1440 is achieved through movement of belt pulley 1420 as provided through theta motor 427-A. FIG. 14D is a perspective view of the clamp 1430 of FIG. 14C according to an embodiment of the present disclosure, and the clamping mechanism provided through the clamp 1430 clamps the clamp 1430 and the disk 1440 with the pad shaft 560-A. Attach rigidly.

15A is a perspective view of a substrate processing system including a lift pad and pedestal configuration 1500, and lift pin assemblies (not shown) provide wafer transfer, according to one embodiment of the present disclosure. 15A illustrates elevation of a lift pad relative to a pedestal through upward movement of the pedestal to accommodate rotation of the lift pad, a lift pad that may be smaller than or substantially similar in size to the wafer, according to one embodiment of the present disclosure. Illustrates another short stroke raising mechanism 440-B that provides.

According to one embodiment of the present disclosure, short stroke pad lift mechanism 440-B is configured to separate the lift pad (not shown) from pedestal 140-A. Lift pad and pedestal configuration 1500 is located within main frame 1105, which is positioned into a processing chamber (eg, secured within the processing chamber). Movement of the pedestal 140-A is provided relative to the main frame, and movement of the lift pad is provided relative to the main frame 1105 (e.g., the lift pad moves with the pedestal bracket 1101) and the pedestal 140-A. ) (separated from pedestal (140-A)) is provided for both. Separation of the lift pad from the pedestal 1140-A may be enabled for the purpose of rotating the lift pad (and the wafer placed thereon) relative to the pedestal 140-A.

The pedestal 140-A of the lift pad and pedestal configuration 1500 may be configured such that movement of the pedestal 140-A is performed by the pedestal and lift pad actuator 515' of FIGS. 7B and 7C and/or the pedestal and lift pad of FIG. 5B. It may be controlled by the pedestal controller 450 of FIGS. 4 and 6 to be implemented via an actuator 515 . The lift pad in the lift pad and pedestal configuration 1500 is configured such that movement of the lift pad is implemented via the pedestal and lift pad actuator 515' of FIGS. 7B and 7C and/or the pedestal and lift pad actuator 515 of FIG. 5B. , may be controlled by the lift pad control unit 455 of FIGS. 4 and 6.

FIG. 15B is a perspective view of the substrate processing system of FIG. 15A including a lift pad and pedestal configuration 1500 in accordance with one embodiment of the present disclosure, illustrating components of a short stroke pad lift mechanism 440-B. In particular, the pad raising mechanism 440-B includes a pedestal support roller 1521 fixed relative to the pedestal bracket 1101. Additionally, lever 1525 is rotatably attached to ferroseal assembly 425-A via pins 1526, such as via connector arms 1251/1252. The pad lift mechanism 440-B includes two levers (on opposite sides of the ferroseal assembly 425-A) that operate together to raise the ferroseal assembly 425-A relative to the pedestal bracket 1101. 1525).

FIG. 15C is a perspective view of the lift pad raising mechanism 440-A of FIG. 15A, more specifically, the ferroseal that provides movement of the lift pad relative to the pedestal 140-A, according to one embodiment of the present disclosure. The interface between assembly 425-A and one of levers 1525 is shown. In particular, pad lift mechanism 440-B includes hard stops 1510 attached to main frame 1105. As pedestal bracket 1101 moves upward relative to main frame 1105, lever 1525 also moves with pedestal bracket 1101 until it engages hard stop 1510. When lever 1525 engages hard stop 1510, lever 1525 rotates about pin 1526 and relative to pedestal bracket 1101 (e.g., in the Z-direction). Induces linear motion at the pin 1526. For example, lever 1525 experiences forces due to hard stop 1510 and pedestal support roller 1521. Since pin 1526 is fixed relative to ferroseal assembly 425-A, linear motion in pin 1526 corresponds to ferroseal assembly 425-A and to pad shaft 560-A: Switch to similar linear motion. As such, when pad lift mechanism 440-B engages hard stop 1510, the lift pad is pulled away from pedestal 140-A for the purpose of rotation of the lift pad relative to pedestal 140-A. is separated.

FIG. 15D is a perspective view of the lift pad raising mechanism 440-B of FIG. 15A according to an embodiment of the present disclosure, more specifically, a pedestal bracket 1101 and a yoke (1101) that provide movement of the lift pad relative to the pedestal. 1540) shows the interface between. As shown, the yoke 1540 is rotatably attached to the pedestal bracket 1011. Yoke 1540 provides balanced forces on the ferroseal connector arms 1251/1252. That is, the yoke 1540 balances forces through its rotation to apply equal forces to both sides of the ferroseal assembly 425-A. That is, any actuation of pad lift mechanism 440-B results in little or no moment on pad shaft 560-A (e.g., radial force effective on shaft bearings).

FIG. 16A is a diagram illustrating the movement of the lift pad raising mechanism 440-B of FIG. 15A immediately prior to separating the lift pad from the pedestal, according to one embodiment of the present disclosure. As shown, short stroke lift pad raising mechanism 440-B of lift pad and pedestal configuration 1500 begins to engage hard stop 1510. Specifically, the pedestal bracket 1101 gets closer to the top as it moves upward in the Z-direction. As shown, the lift pad and pedestal configuration 1500 is near the top position as it moves upward in the Z-direction relative to the main frame 1105. That is, lever 1525 moves pedestal 140-A and pedestal bracket 1101 upward (e.g., when pedestal 140-A is near its highest position) and engages hard stop 1510. Starting to engage. As such, pad lift mechanism 440-A is about to leave, or is beginning to leave, its neutral position. At this point, lift pad 630-A rests on pedestal 140-A. For example, pedestal-referenced MCAs 595-A are still in contact with lift pad 630-A.

FIG. 16B illustrates movement of lift pad raising mechanism 440-B of FIG. 15A at a time after separation of lift pad 630-A from pedestal 140-A, according to one embodiment of the present disclosure. It is a drawing. Lift pad and pedestal configuration 1500 allows the pedestal 140-A and lift pad 140-A to undergo upward movement of the pedestal to accommodate rotation of lift pad 630-A through operation of short stroke pad raising mechanism 440-B. It is configured to lift the lift pad 630-A (for example about 1 mm) to cause separation between the pads 630-A. In particular, short stroke lift pad raising mechanism 440-B is fully engaged with hard stop 1510. That is, the pedestal 140-A and the pedestal bracket 1101 continue to move upward until the pedestal bracket 1101 is at its highest position. In this case, lever 1525 is fully engaged with hard stop 1510 and lever 1525 is fully rotated about pin 1526. That is, a downward force is applied to the lever 1525 by the hard stop 1510 and the pedestal support roller 1521 to induce a (e.g. clockwise) rotation of the lever 1525 relative to the pin 1526. An upward force is applied to the lever 1525. Because the lever is rotatably fixed to pin 1526 and pin 1526 is movably attached to slide 1531 (which is fixed relative to pedestal bracket 1101), rotation of lever 1525 is relative to pedestal 140. -A) and a linear motion (Z-direction) within the pin 1526 relative to the pedestal bracket 1101. Additionally, linear motion at pin 1526 is converted to linear motion of pad shaft 560-A through ferroseal assembly 425-A to cause separation between pedestal 140-A and lift pad.

FIG. 17A is a diagram illustrating the high temperature bearing assembly 755-A of the lift pad and pedestal configuration 1100 of FIGS. 11-16, according to one embodiment herein. High temperature bearing assembly 755-A is first introduced in Figure 7D. Although Figure 17A describes a small lift pad 630-A having a diameter less than the wafer diameter, high temperature bearing assembly 755-A is feasible with a lift pad having a diameter substantially similar to the wafer diameter. In embodiments, high temperature bearing assembly 755-A is configured to operate within a high temperature environment, such as a chamber above 300 degrees Celsius.

The high temperature bearing assembly 755-A of FIG. 17A is similar in configuration to the high temperature bearing assembly 755-B of FIG. 7D and the high temperature bearing assembly 755 of FIGS. 16A-16B, except for the length of the inner sapphire bushing 1724. -B) Similar to . In particular, the length of the inner sapphire bushing 1724 in FIG. 17A is sized for the purpose of allowing access by the end-effector for wafer transfer (e.g., removal and placement of the wafer from a lift pad) and to allow access by the pedestal 140- A) is configured to accommodate separation of the lift pad from the pedestal 140-A for the purpose of rotation of the lift pad (and the wafer on the lift pad). The movement of the lift pad relative to the pedestal 140-A for rotation is approximately 1 mm, and the movement of the lift pad for end-effector access is 14 mm to 18 mm. As such, the length L of hot bearing assembly 755-A is configured to accommodate longer travel of the lift pad for end-effector access. Meanwhile, for the purpose of rotating the lift pad (and the wafer on the lift pad) about the pedestal 140-A, the hot bearing assembly 755-B of FIGS. 16A and 16B is moved from the pedestal 140-A. It is configured solely to accommodate removal of the lift pad of the. For example, the lift pin assembly provides end-effector access. As such, the length of hot bearing assembly 755-B does not need to accommodate the longer movement of the lift pad for end-effector access and is much shorter than the length of hot bearing assembly 755-A. The description of high temperature bearing assembly 755-A is applicable to each of the high temperature bearing assemblies introduced throughout this application.

Additionally, the configuration of the lift pad raising mechanism 440-A described above may cause any (e.g., radial forces) on the hot bearing assembly 755-A (e.g., the A-thermal hot bearing assembly). It leads to no or minimal moments. In particular, when the lift pad raising mechanism 440-A lifts the pad shaft 560-A to separate the lift pad 630-A from the pedestal 140-A, the high temperature bearing assembly 755-A There are no moments or they are minimal.

As shown in FIG. 17A, the hot bearing assembly 755-A has an outer stack on the inner wall of the central axis 510-A of the pedestal 140-A, and an inner stack on the outer diameter of the pad shaft 560-A. Includes stack.

In particular, the inner stack includes a retaining/snap ring (1720), a load distribution washer (1721), a spring wave washer (1722), a load centering and distribution washer (1723), and an inner sapphire bushing (1724). The inner sapphire bushing 1724 has a top edge surface 1791 and a bottom edge surface 1792, both surfaces having conical, angled, or tapered surfaces. FIG. 17D shows an inner sapphire bushing 1724 with an annular shape of a high temperature bearing assembly 755-A, according to one embodiment. As such, the inner sapphire bushing 1724 has a conical cross-section. Additionally, the load centering and distribution washer 1723 has a wedge-shaped, conical, angled, or tapered surface. The conical surfaces of both load centering and distribution washer 1723 and inner sapphire bushing 1724 contribute to centering of pad shaft 560-A within center shaft 510-A.

The outer stack also includes a retaining/snap ring (1710), a load distribution washer (1711), a spring wave washer (1712), a load centering and distribution washer (1713), and an outer sapphire bushing (1714). The outer sapphire bushing 1714 has a top edge surface 1781 and a bottom edge surface 1782, both surfaces having conical, angled, or tapered surfaces. FIG. 17C shows an outer sapphire bushing 1714 having an annular shape of a high temperature bearing assembly 755-A, according to one embodiment of the present disclosure. As such, the outer sapphire bushing 1714 has a conical cross-section. Additionally, the load centering and distribution washer 1713 has a wedge-shaped, conical, angled, or tapered surface. The conical surfaces of both load centering and distribution washer 1723 and inner sapphire bushing 1724 contribute to centering of pad shaft 560-A within central axis 510-A. The outer sapphire bushing 1714 is configured to contact (e.g., rubbing) the inner sapphire bushing 1724 when the lift pad 630-A is separated from the pedestal 140-A.

The lift pad and pedestal configuration shown in FIG. 17A includes centering chamfers 1751/1752 configured together to support the high temperature bearing assembly. For example, centering chamfer 1751 is located on the inner wall of central shaft 510-A to hold and place the outer stack of hot bearing assembly 755-A within central shaft 510-A. ) may provide retention capabilities. Additionally, a centering chamfer 1752 is located on the outer diameter of pad shaft 560-A to hold and place the inner stack of hot bearing assembly 755-A within pad shaft 560-A. It may also provide retention capabilities.

The hot bearing assembly 755-A may cause changes in the pad shaft 560-A within the central shaft 510-A during operation of the pad shaft 560-A (e.g., rotation, lifting, movement, etc.). It is configured to provide zero centering. Additionally, high temperature bearing assembly 755-A is configured to provide consistent centering when exposed to varying temperatures. That is, high temperature bearing assembly 755-A can accommodate different thermal expansion rates between pedestal 140-A and pad shaft 560-A, and other components. For example, the sapphire compositions of the inner sapphire bushing 1724 and the outer sapphire bushing 1714 within the high temperature bearing assembly 755-A may be used to form the pad shaft 560 within the center shaft 510-A of the pedestal 140-A. -A) accommodates thermal mismatch between the pedestal (140-A) and pad shaft (560-A) to provide consistent centering. More specifically, the metal components of the inner and outer stacks provide pre-load forces due to thermal expansion, while corresponding conical components (such as washers and bushings) are centered. causes it to stay as

FIG. 17B is a perspective view of the high temperature bearing assembly 75-A of FIG. 17A, according to one embodiment of the present disclosure. In particular, the inner stack of hot bearing assembly 755-A is shown located on the outer diameter of pad shaft 560-A. The inner stack includes a retaining/snap ring (1720), a load distribution washer (1721), a spring wave washer (1722), a load centering and distribution washer (1723), and an inner sapphire bushing (1724). Additionally, chamfer 1752 is shown positioned above inner sapphire bushing 1724.

In one embodiment, the wave washer 1722 in the inner stack has three contact points to facilitate the load distribution washer 1721 to distribute forces equally across the snap ring 1720. Additionally, the wave washer 1712 in the outer stack has three contact points to facilitate the load distribution washer 1711 to distribute forces equally across the snap ring 1710.

Figure 18 shows a control module 1800 for controlling the above-described systems. In one embodiment, control module 110 of FIG. 1 may include some of the example components of control module 1800. For example, control module 1800 may include a processor, memory, and one or more interfaces. Control module 1800 may be employed to control devices in the system based in part on sensed values. By way of example only, control module 1800 may control one of valves 1802, filter heaters 1804, pumps 1806, and other devices 1808 based on the sensed values and other control parameters. It is also possible to control abnormalities. Control module 1800 receives sensed values from pressure manometers 1810, flow meters 1812, temperature sensors 1814, and/or other sensors 1816, just to name a few. Control module 1800 may also be employed to control process conditions during precursor delivery and deposition of the film. Control module 1800 will typically include one or more memory devices and one or more processors.

Control module 1800 may control activities of the precursor delivery system and deposition apparatus. Control module 1800 controls process timing, delivery system temperature, and pressure differential across filters, valve positions, mixture of gases, chamber pressure, chamber temperature, substrate temperature, RF power levels, substrate chuck or pedestal position, and Executes computer programs that contain sets of instructions that control different parameters of a particular process. Control module 1800 may also monitor pressure differentials and automatically switch vapor precursor delivery from one or more pathways to one or more other pathways. Other computer programs stored on memory devices associated with control module 1800 may be employed in some embodiments.

Typically there will be a user interface associated with control module 1800. The user interface may include a display 1818 (e.g., a display screen and/or graphical software displays of device and/or process conditions) and user input devices such as pointing devices, keyboards, touch screens, microphones, etc. (1820) may also be included.

Computer programs for controlling precursor delivery, deposition and other processes of the process sequence may be written in any conventional computer-readable programming language: for example, assembly language, C, C++, Pascal, Fortran, etc. The compiled object code or script is executed by the processor to perform the tasks identified in the program.

Control module parameters include, for example, filter pressure differentials, process gas composition and flow rates, plasma conditions such as temperature, pressure, RF power levels and low frequency RF frequencies, process conditions such as cooling gas pressure, and chamber wall temperature. related to fields.

System software may be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of chamber components necessary to perform the deposition processes of the present invention. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

The substrate positioning program may include program code for controlling chamber components used to load the substrate onto a pedestal or chuck and to control the gap between the substrate and other parts of the chamber, such as a gas inlet and/or target. there is. The process gas control program may include code for controlling gas composition and flow rates and optionally for flowing gas into the chamber prior to deposition to stabilize the pressure within the chamber. The filter monitoring program includes code for comparing measured difference(s) to predetermined value(s) and/or code for switching paths. The pressure control program may include code for controlling the pressure within the chamber, for example, by regulating a throttle valve in the chamber's exhaust system. The heater control program may include code for controlling current to the heating units to heat components of the precursor delivery system, the substrate, and/or other parts of the system. Alternatively, the heater control program may control the delivery of heat transfer gas, such as helium, to the substrate chuck.

Examples of sensors that may be monitored during deposition include, but are not limited to, mass flow control modules, pressure sensors such as pressure manometers 1810, and thermocouples located within the delivery system, pedestal or chuck (e.g. , temperature sensors (1814/220)). Appropriately programmed feedback and control algorithms may use data from these sensors to maintain targeted process conditions. The foregoing describes implementation of embodiments of the present disclosure in a single-chamber semiconductor processing tool or a multi-chamber semiconductor processing tool.

In some implementations, a controller is part of a system that may be part of the examples described above. These systems may include semiconductor processing equipment, including a processing tool or tools, a chamber or chambers, a platform or platforms for processing, and/or specific processing components (substrate pedestals, gas flow systems, etc.) . These systems may be integrated with electronics to control the operation of semiconductor wafers or substrates before, during, and after processing. Electronic devices may be referred to as “controllers” that may control a system or various components or sub-parts of systems. The controller controls delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, and power settings, depending on the processing requirements and/or type of system. , radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, tools and other transfer tools and/or May be programmed to control any of the processes disclosed in this disclosure, including substrate transfers into and out of loadlocks connected or interfaced with a particular system.

Generally speaking, a controller includes various integrated circuits, logic, memory, and/or components that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. It may also be defined as an electronic device with software. Integrated circuits are chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one that executes program instructions (e.g., software). It may also include one or more microprocessors or microcontrollers. Program instructions may be instructions delivered to the controller or to the system in the form of various individual settings (or program files) that specify operating parameters for executing a particular process on a semiconductor wafer or on a semiconductor substrate. In some embodiments, operating parameters may be used to achieve one or more processing steps during fabrication of dies of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or wafers. It may be part of a recipe prescribed by an engineer.

The controller may, in some implementations, be coupled to or part of a computer that may be integrated into the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may reside in the “cloud” of all or part of a fab host computer system that may enable remote access to substrate processing. The computer monitors the current progress of manufacturing operations, examines the history of past manufacturing operations, examines trends or performance metrics from multiple manufacturing operations, changes parameters of current processing, and performs processing steps that follow the current processing. You can also enable remote access to the system to configure, or start new processes. In some examples, a remote computer (eg, a server) may provide process recipes to the system over a network, which may include a local network or the Internet.

The remote computer may include a user interface that enables entry or programming of parameters and/or settings to be subsequently transferred to the system from the remote computer. In some examples, the controller receives instructions in the form of data that specify parameters for each of the process steps to be performed during one or more operations. It should be understood that these parameters may be specific to the type of tool the controller is configured to control or interface with and the type of process to be performed. Accordingly, as discussed above, the controller may be distributed, for example by comprising one or more individual controllers that are networked together and cooperate together for a common purpose, for example the processes and controls described in this disclosure. An example of a distributed controller for this purpose is one or more integrated circuits on a chamber that communicate with one or more remotely located integrated circuits (e.g., at a platform level or as part of a remote computer) that combine to control processes on the chamber. It could be circuits.

Exemplary systems include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin-rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, bevel edge etch chambers or modules, and physical vapor deposition (PVD) chambers or modules. chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etch (ALE) chamber or module, ion implantation chamber or module, track chamber or module, and semiconductor It may also include any other semiconductor processing systems that may be used or associated with the fabrication and/or fabrication of wafers.

As described above, depending on the process step or steps to be performed by the tool, the controller may be used in material transfer to move containers of wafers to and from tool locations and/or load ports within the semiconductor fabrication plant. It may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a main computer, another controller or tools. .

The foregoing description of the present embodiments has been provided for purposes of illustration and description. It is not intended to be limiting or exhaustive of the present disclosure. Individual elements or features of a particular embodiment are generally not limited to a particular embodiment and, as permitted, may be used in a selected embodiment and are interchangeable, even if not specifically shown or described. The same bar may also be varied in many ways. These variations are not to be considered a departure from the present disclosure, and all such modifications are intended to be included within the scope of the present disclosure.

Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be made within the scope of the appended claims. Accordingly, the present embodiments are to be considered illustrative and non-limiting, and the present embodiments are not limited to the details provided in this disclosure but may be modified within the scope and equivalents of the claims.

Claims (20)

In a lift pad raising mechanism for a process chamber,
A lift pad for the pedestal movably mounted on the main frame;
a main frame extension fixedly coupled to the main frame;
a lower hard stop fixedly coupled to the main frame extension;
a pedestal bracket movably coupled to the main frame and fixedly interconnected to the pedestal, wherein movement of the pedestal bracket is converted into movement of the pedestal;
a first pedestal bracket extension fixedly coupled to the pedestal bracket and including a first bracket roller;
a second pedestal bracket extension fixedly coupled to the pedestal bracket and including a second bracket roller;
a slide fixedly coupled to the pedestal bracket;
a lift pad bracket movably coupled to the slide and interconnected to the lift pad;
A lever rotatably attached to a pin of the lift pad bracket, wherein the lever moves in a neutral position between the first and second bracket rollers when not engaged with the lower hard stop. comprising said lever being loosely constrained;
When the pedestal bracket is moved downward toward its lowest downward position, the lever rotates about the pin and away from the pedestal top surface of the pedestal when it engages the lower hard stop and the first bracket roller. A lift pad raising mechanism configured to release the lift pad. According to claim 1,
The lift pad raising mechanism lies within a recess of the pedestal such that the lift pad surface is flush with the pedestal top surface. According to claim 1,
When the lever rotates about the pin of the lift pad bracket, the lift pad bracket moves upward relative to the pedestal bracket through the slide such that the lift pad moves upward relative to the pedestal. Pad raising mechanism. According to claim 1,
A lift pad raising mechanism wherein the lift pad separates from the pedestal top surface by a sufficient displacement for the purpose of entry of an end-effector. According to claim 1,
As the pedestal bracket moves upward toward its uppermost upward position, the lever rotates about the pin when it engages the upper hard stop and the second bracket roller and processes the pedestal top surface by rotating displacement. A lift pad raising mechanism configured to separate the lift pad from the lift pad. According to claim 5,
wherein the lift pad is configured to rotate relative to the pedestal top surface when separated from the pedestal between at least a first angular orientation and a second angular orientation. According to claim 1,
The lift pad raising mechanism further comprising a pad shaft extending from the lift pad, wherein the lift pad bracket is interconnected with the pad shaft. According to claim 7,
a yoke movably interconnected to the second pedestal bracket extension and movably interconnected to the lift pad via the pad shaft, the yoke being movably interconnected to the lift pad when the lever is engaged with the upper hard stop. A lift pad raising mechanism further comprising the yoke to offset moments induced on the pad shaft. According to claim 1,
the first bracket roller is laterally offset from the second bracket roller relative to the pedestal bracket,
and wherein the first bracket roller is vertically offset from the second bracket roller relative to the pedestal bracket. According to claim 1,
and wherein movement of the pedestal bracket is translated into movement of the lift pad and the pedestal when the lever is not engaged with the upper hard stop or the lower hard stop. In an assembly for use in a process chamber,
a pedestal assembly including a pedestal movably mounted on the main frame;
a lift pad configured to move with the pedestal assembly and rest about a pedestal top surface of the pedestal; and
A lift pad raising mechanism configured to separate the lift pad from the pedestal, the lift pad raising mechanism comprising:
a main frame extension fixedly coupled to the main frame;
a lower hard stop fixedly coupled to the main frame extension;
a pedestal bracket movably coupled to the main frame and fixedly interconnected to the pedestal, wherein movement of the pedestal bracket is converted into movement of the pedestal;
a first pedestal bracket extension fixedly coupled to the pedestal bracket and including a first bracket roller;
a second pedestal bracket extension fixedly coupled to the pedestal bracket and including a second bracket roller;
a slide interconnected to the pedestal bracket;
a lift pad bracket movably coupled to the slide and interconnected to the lift pad;
A lever rotatably attached to a pin of the lift pad bracket, wherein the lever moves in a neutral position between the first and second bracket rollers when not engaged with the lower hard stop. comprising said lever being loosely constrained;
When the pedestal bracket is moved downward toward its lowest downward position, the lever rotates about the pin and away from the pedestal top surface of the pedestal when it engages the lower hard stop and the first bracket roller. An assembly comprising the lift pad raising mechanism configured to release the lift pad. According to claim 11,
The assembly of claim 1, wherein the lift pad lies within a recess of the pedestal such that the lift pad surface is flush with the pedestal top surface. According to claim 11,
When the lever rotates about the pin of the lift pad bracket, the lift pad bracket moves upward relative to the pedestal bracket through the slide such that the lift pad moves upward relative to the pedestal. . According to claim 11,
Wherein the lift pad separates from the pedestal top surface by a sufficient displacement for the purpose of entry of an end-effector. According to claim 11,
As the pedestal bracket moves upward toward its uppermost upward position, the lever rotates about the pin when it engages the upper hard stop and the second bracket roller and processes the pedestal top surface by rotating displacement. An assembly configured to separate the lift pad from. According to claim 15,
wherein the lift pad is configured to rotate relative to the pedestal top surface when separated from the pedestal between at least a first angular orientation and a second angular orientation. According to claim 11,
The assembly further comprising a pad shaft extending from the lift pad, wherein the lift pad bracket is interconnected with the pad shaft. According to claim 17,
a yoke movably interconnected to the second pedestal bracket extension and movably interconnected to the lift pad via the pad shaft, the yoke being movably interconnected to the lift pad when the lever is engaged with the upper hard stop. An assembly further comprising the yoke to cancel the moment induced on the pad shaft. According to claim 11,
the first bracket roller is laterally offset from the second bracket roller relative to the pedestal bracket,
The assembly of claim 1, wherein the first bracket roller is vertically offset from the second bracket roller relative to the pedestal bracket. According to claim 11,
wherein movement of the pedestal bracket translates to movement of the lift pad and the pedestal when the lever is not engaged with the upper hard stop or the lower hard stop.