KR20190057404A - Wafer positioning for semiconductor processing Pad lift mechanism of pedestal - Google Patents

Abstract

An assembly for use in a process chamber for depositing a film on a wafer. The pedestal assembly includes a pedestal that is movably mounted on the mainframe. The lift pad moves with the pedestal assembly and rests on the pedestal. The lifting mechanism separates the lift pad from the pedestal and includes a hard stop fixed to the main frame, a roller attached to the pedestal assembly, a slide movably attached to the pedestal assembly, a pad shaft extending from the lift pad, A pad bracket, and a lever rotatably attached to the lift pad bracket. When the upper hard stop is not engaged, the lever is supported on the roller. When the pedestal assembly is moved upward, the lever rotates about the pin as it engages the upper hard stop and the roller and separates the lift pad from the pedestal by the process rotation displacement.

Description

Wafer positioning for semiconductor processing Pad lift mechanism of pedestal

The present embodiments are directed to semiconductor substrate processing methods and apparatus tools, and more particularly, a wafer positioning pedestal for processing wafers of different wafer-to-pedestal orientations.

Improved film uniformity is important in plasma enhanced chemical vapor deposition (PECVD) techniques and plasma enhanced atomic layer deposition (ALD) techniques. Chamber systems implementing PECVD and ALD are associated with hardware signatures that contribute to non-uniform film deposition. For example, hardware signatures can be associated with chamber asymmetry and with pedestal asymmetry. In addition, many processes experience azimuthal non-uniformity of various origins. Since consumers are attempting to place the die closer and closer to the wafer edge, the contribution of this numerical value of azimuthal non-uniformity to the overall non-uniformity is increased. Despite the best efforts to minimize damage and / or non-uniform deposition profiles, conventional PECVD schemes and plasma ALD schemes still require improvement.

Specifically, multi-station modules that perform PECVD and ALD feature large, open reactors that may contribute to azimuthal non-uniformities (e.g., NU in the theta direction). For example, some non-uniformities may cause a unique film thickness tilt towards the spindle transport mechanism at the center of the reactor. Non-uniformities also exist in single-station modules due to non-uniform physical chamber geometries, including those caused by assembly and component manufacturing tolerances.

Conventionally, deposition non-uniformities were compensated by physically tilting the showerheads so that the showerheads were intentionally oriented not parallel to the pedestals. This is not a good solution, but it is actually valid. However, it is more limited to increase the effectiveness of this scheme, especially since the die size is reduced and the edges of the wafer are increasingly the source of the dies.

It has been shown that processing wafers in multiple orientations without rotating hardware signatures is effective to filter out azimuthal unevenness. The most basic current method in the prior art is a method of partially processing a wafer, removing the wafer from the process chamber, rotating the wafer in a separate wafer handler, and later processing the wafer in a new orientation, And reinserting. The main advantage of this method is that there is no hardware to rotate inside the chamber. However, this prior art solution has drawbacks of throughput, contamination, and considerable additional hardware.

Another solution of the prior art is to rotate the entire pedestal during processing. Another solution of the prior art is to rotate the entire pedestal during processing. However, this solution has a negative property of rotating, a wafer and a non-uniformity associated with the pedestal. In that case, the pedestal can not invalidate and may have non-uniformity signatures that may appear on the wafer during processing. In addition, the edge effects of the wafer within the pocket are another class of irregularity that rotates immediately with the wafer when the entire pedestal is rotated during processing. That is, non-uniformity is not noticeably improved by pedestal rotation (e.g., during ALD oxide deposition). In addition, in addition to limited performance, rotating the entire pedestal requires sacrificing RF power through a rotating pedestal. This requires expensive circuitry for impedance matching through a slip ring to deliver sufficient RF power to the plasma. Rotating the entire pedestal also complicates the delivery of gases and fluids, for example used for cooling. Additionally, the heating systems present on the pedestal also require a rotation that adds cost and complexity.

This disclosure occurs in this context.

These embodiments are directed to providing improved film uniformity during PECVD and ALD processes in single-station and multi-station systems. Embodiments of the present disclosure provide for rotation of the wafer without rotation of the pedestal, which advantageously filters both chamber asymmetry and pedestal asymmetry.

Embodiments of the present disclosure include an assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal assembly having a pedestal that is movably mounted to the mainframe. The assembly includes a lift pad configured to move with the pedestal assembly and to be supported on the pedestal pedestal upper surface of the pedestal. The assembly includes a lift pad raising mechanism configured to separate the lift pad from the pedestal and the lift pad lift mechanism includes an upper hard stop, a first roller, a slide, a lift pad bracket, . The upper hard stop is fixed relative to the main frame. The first roller is attached to the pedestal assembly. The slide is movably attached to the pedestal assembly. The lift pad bracket is interconnected with the slide and is interconnected with a pad shaft extending from the lift pad along a central axis. The lever is rotatably attached to the lift pad bracket via a pin and the lever is supported on the first roller in a neutral position unless engaged with the upper hard stop. With respect to the lift pad mechanism, when the pedestal assembly is moved upward, the lever is rotated about the pin as it engages the first roller and upper hard stop, and is rotated from the pedestal upper surface by a process rotation displacement And is configured to separate the lift pad.

Other embodiments of the present disclosure include an assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal assembly having a pedestal that is movably mounted to the mainframe. The assembly includes a lift pad configured to move with the pedestal assembly and to be supported on the pedestal pedestal upper surface of the pedestal. The assembly includes a lift pad lift mechanism configured to separate the lift pad from the pedestal and the lift pad lift mechanism includes an upper hard stop, a lower stop, a first roller, a second roller, a slide, a lift pad bracket, and a lever . The upper hard stop is fixed relative to the main frame. The lower hard stop is fixed relative to the main frame and is positioned below the upper hard stop relative to the main frame. The first roller is attached to the pedestal assembly. The second roller is attached to the pedestal assembly. The slide is movably attached to the pedestal assembly. The lift pad bracket is interconnected with the slide, which is interconnected with the slide and extends from the lift pad along the central axis. The lever is rotatably attached to the lift pad bracket via a pin and the lever is supported on the first roller in a neutral position unless it is engaged with the upper hard stop. With respect to the lift pad elevation mechanism, when the pedestal assembly is moved upward, the lever is rotated to rotate about the pin when engaging the first roller and the upper hard stop, and to lift the lift pad from the pedestal upper surface by the process rotation displacement Respectively. With respect to the lift pad lifting mechanism, when the pedestal assembly moves downward, the lever rotates about the pin as it engages the second roller and the bottom hard stop, and lifts the lift pad from the pedestal to the end- Respectively.

Other embodiments of the present disclosure include an assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal assembly including a pedestal that is movably mounted to the mainframe. The assembly includes a lift pad configured to move with the pedestal assembly and to be supported on the pedestal pedestal upper surface of the pedestal. The assembly includes a lift pin assembly including a plurality of lift pins extending through a plurality of pedestal shafts configured within the pedestal. The assembly includes a lift pad lift mechanism configured to separate the lift pad from the pedestal and the lift pad lift mechanism includes an upper hard stop, a first roller, a slide, a lift pad bracket, and a lever. The upper hard stop is fixed relative to the main frame. The first roller is configured to be attached to the pedestal assembly. The slide is configured to be movably attached to the pedestal assembly. The lift pad bracket is configured to interconnect with a pad shaft interconnected with the slide and extending from the lift pad along the central axis. The lever is configured to be rotatably attached to the lift pad bracket via a pin and the lever is supported on the first roller in a neutral position unless it is engaged with the upper hard stop. With respect to the lift pad elevation mechanism, when the pedestal assembly is moved upward, the lever is rotated to rotate about the pin when engaging the first roller and the upper hard stop, and to lift the lift pad from the pedestal upper surface by the process rotation displacement Respectively.

In another embodiment, an assembly for use in a process chamber for depositing a film on a wafer is described. The assembly includes means for movably mounting a pedestal assembly including a pedestal to a mainframe, means for moving a lift pad configured to be supported on a pedestal pedestal upper surface of the pedestal with the pedestal assembly, Means. The means for detaching the lift pad from the pedestal may comprise means for securing the upper hard stop relative to the main frame; Means for attaching the first roller to the pedestal assembly; Means for movably attaching the slide to the pedestal assembly; Means for interconnecting the lift pad brackets to and from the pad shaft, the pad shafts extending from the lift pads along the central axis; And means for rotatably attaching a lever to the lift pad bracket via a pin, the lever being a lever that rests on the first roller in a neutral position when not in engagement with the upper hard stop, wherein the pedestal assembly When moving, the lever is configured to rotate about the pin when it comes to the first roller and top hard stop, and to separate the lift pad from the pedestal top surface by the process rotation displacement.

The assembly further includes embodiments. In one embodiment, the assembly also includes means for attaching a pedestal bracket to the pedestal and means for movably attaching a pedestal bracket to the main frame, the pedestal bracket being configured to move the pedestal along a central axis relative to the main frame; And a means for extending the central shaft from the pedestal along a central axis, the central shaft being configured to move with the pedestal, the pad shaft being positioned within the central shaft and configured to separate the lift pad from the pedestal. Also, in one embodiment, the lift pad bracket and the slide are moved upwardly relative to the pedestal assembly so that when the lever rotates about the pin, the lift pad is configured to move relative to the pedestal upper surface along the central axis . Also, in one embodiment, when the lever rotates about the pin, the lift pad and pedestal assembly move in a 2: 1 ratio. Also, in one embodiment, there is no relative movement between the lever and the pedestal assembly when the lever is in the neutral position without engaging the upper hard stop. In addition, in one embodiment the means for moving the lift pad further comprises means for extending the pad top surface from the central axis and means for supporting the pad bottom surface on the pedestal top surface, The surface is configured to support the wafer when positioned thereon. Also, in one embodiment, the diameter of the pad top surface is less than the wafer diameter. Also, in one embodiment, the diameter of the pad top surface is approximately equal to the wafer diameter. Also, in one embodiment, the means for moving the lift pad includes rotating the lift pad relative to the pedestal upper surface when separated from the pedestal at least between a first angular orientation and a second angular orientation . Also, in one embodiment, the means for interconnecting the lift pad brackets to the pad shafts and to the slides include means for interconnecting the lift pad brackets with a ferroseal assembly interconnected to the pad shafts, Is configured to provide a vacuum seal around the pad shaft while the pad shaft does not rotate or rotate.

In another embodiment, another assembly for use in a process chamber for depositing a film on a wafer is described. The assembly includes means for movably mounting a pedestal assembly including a pedestal to the mainframe, means for moving the lift pad with the pedestal assembly and for supporting the lift pad on the pedestal pedestal top surface, separating the lift pad from the pedestal Lt; / RTI > Means for separating the lift pad from the pedestal when actuated comprises means for translating the lever assembly relative to the pedestal assembly; Means for a ferro-seal assembly interconnected with a lever assembly, means for a ferro-seal assembly providing a vacuum seal around the pad shaft, and means for surrounding the peripheries of the pad-shaft assembly; And means for a yoke assembly applying the same force to the opposite sides of the ferro-seal assembly to offset the moment applied to the ferro-seal assembly when the lever assembly is actuated, and means for interconnecting the yoke assembly with the lever assembly Means.

The assembly includes other embodiments. In one embodiment, the means for translating the lever assembly comprises means for securing the upper hard stop relative to the main frame; Means for attaching a first roller to the pedestal assembly; Means for movably attaching the slide to the pedestal assembly; Means for interconnecting the lift pad bracket to the pad shaft and to the slide, the pad shaft being a pad shaft extending from the lift pad along the central axis; And means for rotatably attaching a lever to the lift pad bracket via a pin, the lever being a lever that rests on a first roller in a neutral position when not engaged with the upper hard stop, wherein the pedestal assembly is moved upward The means for rotating the lever about the pin when engaging the first roller and the upper hard stop, and separating the lift pad from the pedestal upper surface by the process rotation displacement. A first connector arm and a second connector arm located at a second end of the first end of the ferro-seal assembly, the first connector arm and the second connector arm being located at opposite sides of the ferro- Means for attaching the ferro-seal assembly to the pad shaft at a first end of the ferro-seal assembly; Means for contacting the yoke assembly with the ferrule assembly in the first connector arm and the second connector arm and means for the yoke assembly applying the same force to the first connector arm and the second connector arm, The arm and the second connector arm are positioned 180 degrees apart from the central axis. In one embodiment, the means for contacting the ferro-seal assembly with the yoke assembly comprises means for rotatably attaching the yoke base to the lift pad bracket via the second pin, the yoke base being rotatable relative to the pin shaft; A means for attaching a yoke arm to the yoke base and extending from the yoke base parallel to the pin axis, the yoke arm offset from the pin by a radial displacement and rotatable relative to the pin axis; And means for providing a forked end to the yoke arm spaced from the yoke base, the forked end comprising a second fork extension configured to contact the second connector arm and a first fork extension configured to contact the first connector arm do. In one embodiment, the means for separating the lift pad from the pedestal comprises means for attaching the rotation motor to the pad shaft via a belt, both configured to rotate the pad shafts about a central axis; And means for attaching a disc attached to the pad shaft and driven by the belt of the ferro-seal assembly to the belt. In one embodiment, the means for movably mounting the pedestal assembly is a pedestal bracket configured to move the pedestal along a central axis with respect to the mainframe, comprising means for attaching a pedestal bracket to the pedestal and means for moving the pedestal bracket Means for possible attachment; Means for extending a central shaft from the pedestal along a central axis, the central shaft being configured to move with the pedestal; And means for separating the lift pad from the pedestal using a pad shaft, the pad shaft being positioned within the central shaft. In one embodiment, the lift pad bracket is moved upwardly and together with respect to the pedestal assembly such that when the lever rotates about the pin, the lift pad is configured to move relative to the pedestal upper surface along the central axis Means for sliding. In another embodiment, there is no relative motion between the lever and the pedestal assembly when the lever is in neutral position without engaging the upper hard stop. In another embodiment, the diameter of the pad top surface is less than the wafer diameter. In another embodiment, the means for separating the lift pad from the pedestal includes means for rotating the lift pad relative to the pedestal upper surface when separated from the pedestal at least between the first angular orientation and the second angular orientation.

These and other advantages will be recognized by those skilled in the art by reading the full disclosure and claims.

Embodiments may best be understood by reference to the following description taken in conjunction with the accompanying drawings.
Figure 1 illustrates a substrate processing system used to process wafers, for example, to form films on a wafer.
Figure 2 illustrates a top view of a multi-station processing tool, with four processing stations provided, according to one embodiment.
3 illustrates a schematic diagram of an embodiment of a multi-station processing tool having an inbound loadlock and an outbound loadlock, according to one embodiment.
Figure 4 illustrates a substrate processing system including a lift pad and pedestal configuration, wherein the lift pad is sized approximately to match the wafer, in accordance with one embodiment of the present disclosure.
5A is a cross-sectional view of the substrate processing system of FIG. 4, in accordance with one embodiment of the present disclosure; Figure 5B is a schematic diagram of a lift pad and pedestal configuration in which the lift pad is sized to match the wafer and the pedestal and lift pads are at a level that allows extension of the lift pins for wafer transfer purposes, Lt; RTI ID = 0.0 > 4 < / RTI >
5C is a diagram of an interface between a lift pad and a pedestal that includes a pad gap to establish minimum contact areas (MCAs), according to one embodiment of the present disclosure.
6 illustrates a substrate processing system, in accordance with one embodiment of the present disclosure, wherein the lift pad comprises a lift pad and pedestal configuration that is smaller than the wafer.
7A is a perspective view of the substrate processing system of FIG. 6, including a lift pad and pedestal configuration, wherein the lift pad is smaller than the wafer, in accordance with an embodiment of the present disclosure.
FIG. 7B is a cross-sectional view of the substrate processing system of FIG. 6, including a lift pad and pedestal configuration, wherein the lift pad is smaller than the wafer, in accordance with one embodiment of the present disclosure.
7C is a cross-sectional view of the substrate processing system of FIG. 6, including a lift pad and pedestal configuration, including a lift pin assembly, wherein the lift pad is smaller than the wafer, in accordance with an embodiment of the present disclosure.
7D is a cross-sectional view of the lift pad-pedestal interface of the substrate processing system of FIG. 6, including a lift pad and pedestal configuration, wherein the lift pad is smaller than the wafer, in accordance with an embodiment of the present disclosure.
7E is a perspective view of the top surface of the lift pad in the substrate processing system of FIG. 6 including a lift pad and pedestal configuration in accordance with one embodiment of the present disclosure;
Figure 7F is a perspective view of the lower surface of the lift pad of the substrate processing system of Figure 6, including a lift pad and pedestal configuration, in accordance with one embodiment of the present disclosure;
Figure 8 is a flow chart illustrating a method of operating a process chamber configured to deposit a film on a wafer, in accordance with one embodiment of the present disclosure, the method comprising: rotating the wafer in a process chamber during processing without rotation of the pedestal And advantageously filters both chamber asymmetry and pedestal asymmetry.
FIGS. 9A and 9B illustrate an embodiment of the present invention, including a rotation of the wafer without rotation of the pedestal within the process chamber during processing, wherein the lift pad is approximately sized to match the wafer, Are diagrams illustrating the motion sequence of a lift pad and pedestal configuration, filtering both pedestal asymmetry.
FIG. 9C is a schematic diagram of an embodiment of the present invention wherein the lift pad is roughly sized with the wafer and the orientation of the lift pad relative to the pedestal of the lift pad and pedestal configuration during the first process sequence, the rotation sequence, Fig.
10A and 10B illustrate an embodiment of the present invention wherein the lift pad is smaller than the wafer and the lift pad is configured to allow transfer of the wafer (e.g., via the end-effector arm) Are diagrams illustrating the motion sequence of the lift pad and pedestal configuration, including rotation of the wafer without the rotation of the pedestal, and advantageously filtering both chamber asymmetry and pedestal asymmetry.
FIG. 10C is a side elevational view of an embodiment of the present invention, wherein the lift pad is smaller than the wafer and includes a rotation of the wafer without rotation of the pedestal within the process chamber during processing and advantageously filters both chamber asymmetry and pedestal asymmetry, Lt; RTI ID = 0.0 > pedestal < / RTI >
10D is a diagram illustrating the orientation of lift pads for a pedestal of a lift pad and pedestal configuration where the lift pad is smaller than the wafer during the first process sequence, the rotation sequence, and the second process sequence, according to one embodiment of the present disclosure. to be.
11A is a perspective view of a substrate processing system including a lift pad and pedestal configuration in accordance with one embodiment of the present disclosure, illustrating a short stroke lift pad lift mechanism wherein the lift pad is substantially similar in size to the wafer or smaller than the wafer It is possible.
FIG. 11B is a perspective view of the substrate processing system of FIG. 11A including a lift pad and pedestal configuration in accordance with one embodiment of the present disclosure, illustrating components of a short stroke lift pad lift mechanism.
12A is a perspective view of a lift pad lifting mechanism of a substrate processing system including a lift pad and a pedestal configuration of Figs. 11A and 11B according to one embodiment of the present disclosure; Fig.
FIG. 12B is a diagram illustrating a motion sequence of the lift pad and pedestal configuration short stroke pad lift mechanism of FIGS. 11A and 11B according to one embodiment of the present disclosure, wherein the upward movement of the pedestal to accommodate the rotation of the lift pad To illustrate the lift of the lift pad through downward motion of the pedestal to facilitate entry of the end-effector for wafer transfer.
FIG. 13 is a perspective view of the lift pad lift mechanism of FIG. 12A, and more specifically, illustrates the interface between the yoke and the slide to provide movement of the lift pad relative to the pedestal in accordance with one embodiment of the present disclosure.
FIG. 14A is a perspective view of the lift pad lift mechanism of FIG. 12A, and more particularly, the interface between the ferro-seal assembly and the yoke to provide movement of the lift pad relative to the pedestal, in accordance with one embodiment of the present disclosure;
14B is a perspective view of the yoke of FIG. 14A interfacing with a ferro-seal assembly, in accordance with one embodiment of the present disclosure;
14C is a perspective view of a clamping mechanism that provides a linkage between the pad shaft of the lift pad and the ferro-seal assembly to convert motion of the ferro-seal assembly into movement of the lift pad, in accordance with one embodiment of the present disclosure.
Figure 14d is a perspective view of a clamp in the clamping mechanism of Figure 14c according to one embodiment of the present disclosure.
15A is a cross-sectional view of an elevation of a lift pad relative to a pedestal through upward motion of the pedestal to accommodate rotation of the lift pad, which is a lift pad that may be smaller than the wafer or may have a size substantially similar to the wafer, In which the lift pin assembly provides wafer transfer, illustrating another short-stroke lift mechanism that allows the lift pin assembly to provide wafer transfer.
15B is a perspective view of the substrate processing system of FIG. 15A including a lift pad and pedestal configuration in accordance with one embodiment of the present disclosure, illustrating the components of the short stroke pad lift mechanism.
15C is a perspective view of the lift pad lift mechanism of FIG. 15A according to one embodiment of the present disclosure, and more particularly, illustrates the interface between the lever and the ferro-seal assembly that provides movement of the lift pad relative to the pedestal.
15D is a perspective view of the lift pad lift mechanism of FIG. 15A according to one embodiment of the present disclosure, and more particularly, the interface between a pedestal bracket and a yoke that provides movement of the lift pad relative to the pedestal.
16A is a diagram illustrating movement of the lift pad lifting mechanism of FIG. 15A just prior to detaching the lift pad from the pedestal, in accordance with one embodiment of the present disclosure.
FIG. 16B is a view illustrating movement of the lift pad lifting mechanism of FIG. 15A at a point subsequent to separation of the lift pad from the pedestal, in accordance with one embodiment of the present disclosure.
17A is a diagram illustrating a high temperature bearing assembly in a lift pad and pedestal configuration, in accordance with one embodiment of the present disclosure.
Figure 17B is a perspective view of the high temperature bearing assembly of Figure 17A, in accordance with one embodiment of the present disclosure;
Figure 17C illustrates an outer sapphire bushing having an annular shape of a high temperature bearing assembly, according to one embodiment of the present disclosure.
17D illustrates an inner sapphire bushing having an annular shape of a high temperature bearing assembly, according to one embodiment of the present disclosure.
Figure 18 shows a control module for controlling the systems described above.

Although the following detailed description contains many specific details for purposes of illustration, it will be apparent to those skilled in the art that many modifications and variations of the details below are within the scope of this disclosure. Accordingly, aspects of the disclosure described below have been presented without necessarily implying any loss of generality to the claims following the description and without limiting the claims.

Generally speaking, the various embodiments of the present disclosure describe systems and methods that provide improved film uniformity during wafer processing (e.g., PECVD and ALD processes) in single-station and multi-station systems. In particular, embodiments of the present disclosure are provided for rotating a wafer without rotating the pedestal to filter both chamber asymmetry and pedestal asymmetry. In this way, azimuthal non-uniformities due to chamber asymmetry and pedestal asymmetry are minimized to achieve film uniformity across the entire wafer during processing (e.g., PECVD, ALD, etc.).

With a general understanding of the various embodiments, exemplary details of the embodiments will now be described with reference to the various figures. Similarly numbered embodiments and / or components in one or more of the figures are generally intended to have the same configuration and / or functionality. In addition, the drawings may not be drawn to scale and are intended to illustrate and emphasize the novel concepts. It will be appreciated that the embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail so as not to unnecessarily obscure the embodiments.

Figure 1 illustrates a reactor system 100 that may be used to deposit films on substrates, such as formed in atomic layer deposition (ALD) processes. These reactors may utilize two or more heaters and common terminal configurations may be used in this illustrative example to control temperatures for uniformity or custom settings. More specifically, FIG. 1 illustrates a substrate processing system 100, which is used for processing wafers 101. The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. The central column is configured to support the pedestal 140, which in this embodiment is a powered electrode. The pedestal 140 is electrically coupled to the power supply 104 through the matching network 106. The power supply is controlled by the control module 110, for example, a controller. The control module 110 is configured to operate the substrate processing system 100 by executing a process input and control 108. Process inputs and controls 108 include process recipes such as those for depositing or forming films on the wafer 101, such as power levels, timing parameters, process gases, mechanical motion of the wafer 101, You may.

The center column also includes lift pins (not shown), and each of the lift pins is actuated by a corresponding lift pin actuating ring 120 when controlled by a lift pin control 122. The lift pins are used to lift the wafer 101 from the pedestal 140 which causes the end-effector to pick up the wafer and place the wafer 101 down by the end-effector. The substrate processing system 100 further includes a process gas 114, for example, a gas supply manifold 112 that is connected to gas chemical feeds from the installation. In accordance with the processing to be performed, the control module 110 controls the delivery of the process gas 114 through the gas supply manifold 112. The selected gases then flow into the showerhead 150 and are dispersed within a defined volume of space between the showerhead 150 face facing the wafer 101 and the wafer 101 supported across the pedestal 140. In ALD processes, gases may be selected reactants for reaction with absorbed or absorbed reactants.

In addition, the gases may not premix or premix. Appropriate valve and mass flow control mechanisms may be employed to ensure proper gas delivery during process deposition and plasma treatment phases of the process. The process gases exit the chamber through the outlet. A vacuum pump (such as a one- or two-stage mechanical dry pump and / or turbo molecular pump) draws process gasses and is suitable for use in a reactor by a closed loop controlled flow restriction device, such as a throttle valve or pendulum valve Maintain low pressure.

A carrier ring 200 surrounding the outer region of the pedestal 140 is also shown. The carrier ring 200 is configured to rest on a carrier ring support area that is a step down from the wafer support area at the center of the pedestal 140. The carrier ring includes the outer edge side of the disc structure, e.g., the outer radius, and the inner radius closest to the wafer edge side of the disc structure, e.g., where the wafer 101 is located. The wafer edge side of the carrier ring includes a plurality of contact support structures configured to lift the wafer 101 when the carrier ring 200 is lifted by the spider forks 180. Thus, the carrier ring 200 may be lifted with the wafer 101 and rotated, for example, from a multi-station system to another station. In other embodiments, the chamber is a single-station chamber.

Figure 2 illustrates a top view of a multi-station processing tool, in which four processing stations are provided. This plan view is a top view of the lower chamber portion 102b (e.g., the upper chamber portion 102a is removed for illustration) and four stations are accessed by the spider forks 226. Each of the spar forks or the forks includes a first arm and a second arm, each of which is positioned to surround a portion of each side of the pedestal 140. In this figure, spider forks 226 are shown as dash-lines conveying things underneath carrier ring 200. Spider forks 226 using engagement and rotation mechanisms 220 simultaneously lift and lift the carrier rings 200 (i.e., from the lower surface of the carrier rings 200) from the stations, (At least one of the carrier rings supports the wafer 101) before the carrier rings 200 are lowered to the next position so that other plasma processing, processing and / or film deposition may occur on each of the wafers 101 And is configured to rotate at least one or more stations.

3 illustrates a schematic diagram of an embodiment of a multi-station processing tool 300 having an inbound load lock 302 and an outbound load lock 304. As shown in FIG. At atmospheric pressure, the robot 306 is configured to move substrates from the cassette loaded through the pod 308 into the inbound load lock 302 via the standby port 310. The inbound load lock 302 is coupled to a vacuum source (not shown) such that when the standby port 310 is closed, the inbound load lock 302 may be pumped down. The inbound load lock 302 also includes a chamber transfer port 316 interfaced with the processing chamber 102b. Thus, when the chamber transfer port 316 is open, another robot (not shown) may move the substrate from the inbound load lock 302 to the pedestal 140 of the first process station for processing.

The illustrated processing chamber 102b includes four process stations numbered from one to four in the embodiment shown in FIG. In some embodiments, the processing chamber 102b maintains a low pressure atmosphere so that the substrates may be transported using the carrier ring 200 between process stations without experiencing vacuum breaks and / or air exposure. . Each of the process stations shown in Figure 3 includes a process station substrate holder (shown as 318 for station 1) and process gas delivery line inlets.

Figure 3 also shows spider forks 226 for transferring substrates within the processing chamber 102b. Spider forks 226 rotate and enable the transfer of wafers from one station to another. The transfer occurs by enabling the spider forks 226 to lift the carrier rings 200 from the outer lower surface, lifting the wafer and rotating the wafer and carrier together to the next station. In one configuration, spider forks 226 are made of a ceramic material to withstand high levels of heat during processing.

Wafer positioning lift pad and pedestal configuration

FIG. 4 illustrates a substrate processing system including a lift pad and pedestal configuration 400, according to one embodiment of the present disclosure, wherein the lift pad 430 is of a substantially size (not shown) to match a wafer Is determined. In some embodiments, the lift pad 430 is sized approximately to allow integration with the carrier ring assembly. The lift pad and pedestal configuration 400 may be implemented within the systems of FIGS. 1-3, including a multi-station tool and a single-station processing tool.

The lift pad and pedestal configuration 400 includes a lift pad 430 controlled by a lift pad control 455 and a pedestal 140 'controlled by a pedestal control 450. The center shaft 510 'is coupled to the pedestal 140' and the pad shaft 560 is coupled to the lift pad 430. The pedestal control unit 450 controls the motion of the center shaft 510 'to induce the motion of the pedestal 140'. For example, the pedestal control unit 450 may control the pedestal 140 'during pre-processing, processing, and post-processing sequences (e.g., up and down along the center axis) Control the motion. The lift pad control 455 controls the movement of the lift pad shaft 560 to induce movement of the lift pad 430. For example, the lift pad control 455 may be used during pre-processing, processing, and post-processing sequences (e.g., rotating up and down along the center axis 471 and around the center axis 471) And rotationally) movements of the lift pad 430. In particular, the lift pad and pedestal configuration 400 provides rotation of the wafer with a significantly reduced hardware rotation signature compared to when rotating the entire pedestal 140 '. That is, pedestal 140 and / or chamber (not shown) remain fixed with respect to lift pad 430 while the wafer rotates, so that pedestal and chamber based asymmetries are all filtered so that on the wafer during processing Significantly reducing the hardware pedestal and chamber signatures that appear. That is, the non-uniformities introduced by the pedestal signature can be distributed symmetrically across the wafer, through wafer rotation using a lift pad, without rotating the pedestal during wafer processing.

The lift pad and pedestal configuration 400 may be configured to directly heat the pedestal 140 '(e.g., via conduction) and indirectly heat the lift pad 430 when placed on the pedestal 140' And a plurality of heating elements 470 used. In addition, the lift pad and pedestal configuration 400 includes a plurality of cooling elements 480, optionally in some process modules, to cool the pedestal 140 '.

The lift pad and pedestal configuration 400 includes a center column that is shown to include a coaxial lift pin assembly 415 having a plurality of lift pins controlled by a lift pin control 122, . For example, the lift pins can be used to lift the wafer from the lift pad 430 and the pedestal 140 'to cause the end-effector to pick up the wafer and lower the wafer after being placed by the end-effector during the wafer transfer sequences .

The lift pad and pedestal configuration 400 includes a bellows 420. The bellows 420 is individually coupled to lift pin assembly 415, pedestal, or lift pad and is configured for movement of lift pins, pedestal, or lift pads. In addition, the lift pad and pedestal arrangement 400 includes a rotation motor in a belt-pulley arrangement 427. In addition, ferroseal 425 facilitates rotation of lift pad 430 in a vacuum environment. Further, in one embodiment, the wafer size lift pad 430 is compatible with an electrostatic chuck (ESC). ESC 570 is configured to include electrodes biased at a high voltage to induce an electrostatic holding force such that ESC 570 holds the wafer in the active position. In addition, in one embodiment, the lift pad and pedestal configuration 400 may be configured to move between the lift pad 430 and the pedestal 140 ', particularly when the lift pad 430 is moved to be supported on the pedestal 140' And a compliant shaft section 435 that promotes a uniform gap.

As shown in Figure 4, in one embodiment, a ball screw 437 (e.g., turning to the left) drives the lift pins in the opposite direction of the pedestal 140 'during one sequence of processing . For example, the ball screw 437 may be engaged during the wafer transfer sequence to extend the lift pins while the pedestal 140 'is moved to the bottom-most position or to the lowermost position for wafer transfer It is possible. A ball screw 443 (e.g., turning to the right) is used to move the pedestal along the central axis in the Z direction. For example, the ball screw 443 is configured to drive the pedestal 140 'in the Z-direction along the central axis using the Z-motor 445. In addition, a short-stroke coupling mechanism 440 is shown.

5A is a cross-sectional view of the substrate processing system of FIG. 4, in accordance with one embodiment of the present disclosure; Specifically, FIG. 5A illustrates a lift pad and pedestal configuration 400 that is approximately sized to match the lift pad 430 with a wafer (not shown).

For illustrative purposes only, the pedestal 140 'is formed of three segments to accommodate a plurality of heating elements 470 and a plurality of cooling elements 480 during fabrication. It is appreciated that the pedestal 140 'is considered to be one element and may be formed using any suitable fabrication process.

5A, pedestal 140 'and lift pad 430 are at a level that allows extension of lift pins 557 for wafer transfer purposes. Each of the lift pins 557 is coupled to a corresponding lift pin support 555 to effect motion and the movement of the lift pin supports 555 is controlled by a lift pin control 122. In one embodiment, the pedestal 140 'is in the lowermost position along Z moving along the central axis 471.

As described previously, the pedestal control unit 450 controls the motion of the center shaft 510 '. Since the pedestal 140 'is coupled to the center shaft 510', the motion of the center shaft 510 'translates to the pedestal 140'. In addition, the lift pad control 455 controls the motion of the pad shaft 560, as previously described. Since the lift pad 430 is coupled to the pad shaft 560, the movement of the pad shaft 560 is switched to the lift pad 430.

Figure 5B is a side view of the substrate processing system 400 of Figure 4 showing an assembly 500B including a lift pad and pedestal configuration 400, previously introduced in Figures 4 and 5A and 5B, according to one embodiment of the present disclosure. Fig. The lift pad 430 is approximately sized to match the wafer (not shown). In yet another embodiment, the diameter of the lift pad 430 is sized to receive a carrier ring (not shown). The lift pad and pedestal configuration 500A can be used in single-station and multi-station systems by rotating the wafer using a lift pad without rotating the pedestal to filter azimuthal variations due to chamber asymmetry and pedestal asymmetry Provides improved film uniformity during processes (e.g., PECVD, ALD, etc.). In particular, the rotating lift pad 430 is much thinner than the entire pedestal 140 ', so that the rotation signature of the lift pad 430 includes heater elements 470 and cooling elements 480 Is much smaller than the rotation signature of pedestal 140 '(asymmetric hardware contributes to non-uniformities). That is, the non-uniformities introduced by the pedestal signature can be distributed symmetrically across the wafer, through wafer rotation using a lift pad, without rotating the pedestal during wafer processing.

In assembly 500B, the pedestal 140 'includes a pedestal top surface 533 extending from the central axis 471 of the pedestal 140'. The upper surface 533 is coupled to a shaft 471 configured to facilitate coupling between the pad shaft 510 'and the lift pad 430 to provide an interface between the pedestal 140' and the lift pad 430 And recesses that form the lateral rim 509. In one embodiment, While the pedestal 140 'may generally be described as having a circular shape as viewed from above and extending to a pedestal diameter, the footprint of the pedestal 140' may be different, such as a carrier ring support and end-effector access, It may vary from the correct circle to accommodate the features.

As shown, the pedestal 140 'is connected to an actuator 515, which is configured to control the motion of the pedestal 140'. Specifically, the pedestal control unit 450 is coupled to the actuator 515 to control the motion of the pedestal 140 '. That is, the center shaft 510 'is coupled to the actuator 515 and the pedestal 140' such that the center shaft 510 'extends between the actuator 515 and the pedestal 140'. The center shaft 510 'is configured to move the pedestal 140' along the central axis 471. In this way, the motion of the actuator 515 is converted into the motion of the center shaft 510 ', which eventually switches to the motion of the pedestal 140'.

In addition, the pedestal 140 'is shown having three segments 140a', 140b ', and 140c' for illustrative purposes only. For example, the pedestal 140 'may be formed of three segments to accommodate formation during fabrication of the plurality of heating elements 470 and / or the plurality of cooling elements 480. As previously disclosed, it is recognized that the pedestal 140 'is considered to be one element and may be formed using any suitable fabrication process.

In assembly 500B, the lift pad 430 includes a pad top surface 575 that extends from the center axis 471. In one embodiment, pad top surface 575 extends to pad diameter 577. The lift pad 430 includes a pad bottom surface 543 configured to be supported on the pedestal top surface 533. In addition, the pad top surface 575 is configured to support the wafer when the wafer is positioned at the top.

In addition, the lift pad 430 is ESC (electrostatic chuck) compatible as previously described. For example, the ESC assembly 570 is disposed below the pad top surface 575. Electrostatic chuck assembly 570 prevents wafer motion due to chamber flow disturbances and maximizes the contact of the wafer with respect to the chuck (i.e., with respect to the lift pad top surface 575). The advantage of the lift pad 430, which is roughly sized with the wafer combined with the full-wafer ESC, results in minimal wafer backside deposition. In addition, the full-wafer ESC does not require declamping to twist and / or rotate.

As shown, the lift pad 430 is connected to an actuator 515, which is configured to control the movement of the lift pad 430. The lift pad control 455 is coupled to the actuator 515 to control the movement of the lift pad 430. That is, the pad shaft 560 is coupled to the actuator 515 and the pedestal 140 'such that the pad shaft 560 extends between the actuator 515 and the pedestal 140'. The pad shaft 560 is configured in a center shaft 510 'that is connected to the pedestal 140'. Specifically, the pad shaft 560 is configured to move the pedestal 140 'along the central axis 471. As such, the motion of the actuator 515 is converted to the motion of the pad shaft 560, which eventually translates into the motion of the lift pad 430. In one embodiment, the actuator 515 controls the movement of both lift pad 430 and pedestal 140 '.

Specifically, the pad shaft 560 is configured to separate the lift pad 430 from the pedestal 140 ', and will be more fully described below with respect to Figures 9A-9C. For example, the lift pad 430 may be positioned in the upward position when the pedestal 140 'is in an upward position such that the lift pad 430 is separated from the pedestal top surface 533 by a process rotation displacement for the purpose of rotation of the lift pad 430 , And is configured to move upward with respect to the pedestal upper surface 533 along the central axis 471. In one embodiment, the lift pad 430 moves upward relative to the pedestal upper surface 533 when the pedestal 140 'reaches the uppermost up position. In addition, when the lift pad 430 is separated from the pedestal upper surface 533, the lift pad 430 can be moved between at least a first angular orientation and a second angular orientation (e.g., between 0 and 180 degrees) To the pedestal upper surface 533 of the pedestal 140 '. The pad shaft 560 is also configured to lower the lift pad 430 to rest on the pedestal 140 '. Specifically, a flexible coupler 435 (shown in Figure 5C) is positioned within the pad shaft 560 and is configured to evenly position the lift pad 430 over the pedestal 140 '.

To prepare the lift pad 430 for rotation, the lift pad 430 moves upward relative to the pedestal 140 'in one embodiment. That is, the lift pad 430 is positioned so that the lift pad 430 is separated from the pedestal upper surface 533 by the process rotation displacement 940 (see FIG. 9B), and the wafer placed on the lift pad 430 is also moved to the pedestal Is configured to move up relative to the pedestal upper surface 533 along the central axis 471 when the pedestal 140 'is in the upward position (e.g., the uppermost up position) during wafer processing to separate the pedestal 140' . Specifically, when the lift pad 430 is separated from the pedestal 140 ', the lift pad 430 is moved between at least a first angular orientation and a second angular orientation relative to the pedestal upper surface 533, As shown in FIG. This rotation reduces the effects of pedestal hardware signatures during processing and also reduces the effects of chamber hardware signatures during processing. Additionally, the focus ring (not shown) does not rotate with the wafer, reducing hardware signatures on the wafer during processing.

The assembly 500 includes a lift pin assembly including a plurality of lift pins 557. For illustrative purposes, pedestal 140 'and lift pad 430, according to one embodiment of the present disclosure, are at a level that allows extension of lift pin 557 for wafer transfer purposes. Specifically, the lift pins 557 are used to transfer the wafers to lift pins 557 or lift pins 557 (not using a carrier ring or using a carrier ring) Through a plurality of pedestal shafts 518 disposed in the pedestal 140 'and through a plurality of lift pad shafts 519 of the lift pad 430 so that the orbit can be modified to a position to receive the wafer from the lift pedestal 140' Extending from pad 430. Corresponding pedestal shafts 518 and pad shafts 519 are arranged and configured to receive lift pins 557. As shown, the one or more lift pin shafts and corresponding lift pins may be configured within the lift pin assembly to lift and position or remove the wafer during wafer transfer. As shown, each of the lift pins 557 is coupled to a corresponding lift pin support 555 to effect movement. The lift pin supports 555 are coupled to a lift pin actuator 550. In addition, the lift pin control 122 controls the movement of the lift pin actuator 550 to effect movement of the lift pins 557.

The lift pin support 555 may be of any shape (e.g., an annular ring washer, an arm extending from an annular base, etc.). Specifically, during operation of the lift pin assembly, the lift pin 557 is attached to the lift pin support 555 and lifts the wafer over the lift pad top surface 575 during wafer transfer and processing within the lift pin shaft and / Or to lower the wafer so that it is supported on pad top surface 575.

5C illustrates a lift pad 140, in accordance with one embodiment of the present disclosure, including a pad gap that sets MCAs (minimum contact areas) for controlling and / or mechanically setting gaps during process sequences. And the pedestal 430. In the example of FIG. This results in uniform temperature and impedance control of the pad. The interface shown in Fig. 5C is an example of the interfaces between the lift pads and the pedestals shown in Figs. 5A and 5B.

This is advantageous in that the gap between the lift pad 430 and the pedestal 140 'is uniform and small during the deposition processes. For example, PECVD and ALD processing may represent non-uniformity signatures due to temperature and plasma impedance for example. Both factors are sensitive to the gap between the wafer and the pedestal. Minimizing the size of the gaps and controlling the uniformity of the gaps over the lift pad and pedestal configurations reduces the signatures caused by temperature and plasma impedance.

Specifically, the small gap allows low impedance coupling of radio frequency (RF) energy between lift pad 430 and pedestal 140 '. In addition, the small gaps provide lower heat resistance, allowing heating and / or cooling to be easily performed from the pedestal 140 'to the lift pad 430. In addition, a uniform gap between lift pad 430 and pedestal 140 'ensures uniform heat transfer and uniform RF coupling.

As shown, the pedestal top surface 533 includes a plurality of pad supports 595 formed at the top (e.g., a pad gap setting MCAs), and pad supports are mounted on the pedestal top surface 533, And is configured to support the lift pad 430 at a support level. Segments 140a 'and 140b' of the pedestal 140 'are shown in Figure 5c. As previously described, the pad supports 595 provide a uniform small gap between the lift pad 430 and the pedestal 140 'so that a uniform, uniform gap between the lift pad 430 and the pedestal 140' Heat transfer and uniform RF coupling. More specifically, the lower surface 543 of the lift pad 430 is configured to be supported on a plurality of pad supports 595 of the pedestal 430. For example, the pedestal 140 'and the lift pad 430 may be positioned at a process position (e.g., plasma processing, processing and / or film deposition) so that the lift pad 430 is supported on the plurality of pad supports 595 , Or may be configured with a pre-coat position. In addition, the lift pad 430 is configured to move with the pedestal 140 'when supported on the pad supports 595. The pad supports may be electrically conductive for DC, low frequency, and RF transmission.

FIG. 6 illustrates a substrate processing system including a lift pad and pedestal configuration 600, wherein the lift pad 630 is smaller than a wafer (not shown), in accordance with an embodiment of the present disclosure. The lift pad and pedestal configuration 600 may be implemented within the systems of FIGS. 1-3, including multi-station tools and single-station processing tools.

The lift pad and pedestal configuration 600 includes a lift pad 630 controlled by a lift pad control 455 and a pedestal 140 " controlled by a pedestal control 450. The pedestal control unit 450 controls the movement of the pedestal 140 " along the central axis 471 'and the lift pad control 455 controls the lift of the pedestal 140 " about the central axis 471' And controls movement (e.g., up, down, and rotates) of the pad 630. The lift pad and pedestal configuration 600 provides a rotation of the wafer (not shown) through the lift pad 630 with a significantly reduced hardware rotation signature when compared to a pedestal rotation or pedestalless processing tool do.

The lift pad and pedestal configuration 600 includes a small lift pad 630 that is smaller than the wafer footprint. The lift pad and pedestal configuration 600 may be suitable for some deposition processes when ESC is selected. In that case, the small lift pad 630 is preferred because it allows for minimum contact areas that support the wafer during the process so that it does not rotate with the wafer. In that case, adjusting the gap of the wafer does not nominally rotate the wafer, which reduces exposure to hardware asymmetry. In addition, the smaller lift pad 630 also proposes additional advantages with a reduced mass that must be rotated and provides less mechanical stresses to the system.

The lift pad and pedestal configuration 600 includes a plurality of lift pins 630 included in the pad shaft 560 'of the lift pad 630 to match the temperature at the surface of the lift pad 630 to the surface of the pedestal 140 & Heating elements 470 'and a thermocouple 607. Cooling elements of the pedestal 140 " may be included in some process modules.

In one embodiment, although not shown, the lift pad and pedestal configuration 600, as previously described, includes a lift with a plurality of lift pins controlled by a lift pin control 122 to selectively provide wafer transfer Pin assembly. The flange 605 is included in a co-axial lift pin assembly (not shown). In another embodiment, the miniature lift pad 630 may be used to provide lift pin functionality, eliminating the need for a lift pin assembly, thus providing cost and packaging advantages.

The lift pad and pedestal configuration 600 includes a plurality of bellows 420 'independently coupled to the selectable lift pin assembly, the pedestal 140 ", or the lift pad 630, . In addition, the lift pad and pedestal configuration 600 also includes a rotation motor of a belt-pulley device (not shown) smaller than the belt-pulley device shown in FIG. The ferro-seal ring 425 'facilitates rotation of the lift pad 630 in a vacuum atmosphere.

In addition, the Z-motor 445 'is configured to drive the pedestal 140' 'in the Z-direction along the central axis 471'. In addition, a coupling mechanism drive slide 603 is attached to the pedestal and center shaft 510 ", attached to a ball screw attached to the Z-motor 445 ', and both attached along the central axis 471' Is used to facilitate movement of the pedestal 140 ".

7A is a perspective view of the substrate processing system of FIG. 6, in accordance with one embodiment of the present disclosure. Specifically, FIG. 7A includes a lift pad and pedestal configuration 600 in which the lift pad 630 is smaller than a wafer (not shown). 7A, pedestal 140 " and lift pad 630 are shown with positions and / or levels that allow for wafer processing.

As previously described, the pedestal control portion 450 controls the motion of the center shaft 510 ". Since the pedestal 140 '' is coupled to the center shaft 510 '', the motion of the center shaft 510 '' is converted to pedestal 140 ''. In addition, the lift pad control 455 controls the motion of the pad shaft 560 ', as previously described. Since the lift pad 630 is coupled to the pad shaft 560 ', the movement of the pad shaft 560' is switched to the lift pad 630.

The pedestal 140 '' of the lift pad and pedestal configuration 600 includes a pedestal top surface 720 extending from the central axis 471 '' of the pedestal 140 ''. A plurality of wafer supports 760 are disposed on top surface 720. In addition, an elevated rim 710 is disposed on the outer edge of the pedestal top surface 720 and an elevated rim 710 is configured to block lateral movement of the wafer disposed on the pedestal 140 " do.

FIG. 7B is a cross-sectional view of the substrate processing system of FIG. 6 showing an assembly 700B including a lift pad and pedestal configuration 600, previously introduced in FIGS. 6 and 7A, according to one embodiment of the present disclosure . The lift pad 630 is sized smaller than the wafer according to one embodiment of the present disclosure. For illustrative purposes only, pedestal 140 " and lift pad 630 are shown with positions and / or levels that allow for wafer processing. The lift pad and pedestal configuration assembly 700B may be used in a single-station system and in a multi-station system by rotating the wafer using a lift pad without rotating the pedestal to filter azimuthal variations due to chamber asymmetry and pedestal asymmetry Provides improved film uniformity during processes (e.g., PECVD, ALD, etc.). Specifically, the rotating lift pad 630 is much smaller and much thinner than the entire pedestal 140 ", so that the rotation signature of the lift pad 630 includes the pedestal 620, including the heater elements 480 ' (Asymmetric hardware contributes to non-uniformities). That is, the non-uniformities introduced by the pedestal signature can be distributed symmetrically across the wafer, through wafer rotation using a lift pad, without rotating the pedestal during wafer processing.

In assembly 700B, the pedestal 140 " includes a pedestal top surface 720 that extends from the central axis 471 ' of the pedestal 140 ". A pedestal top surface 720 is configured to support the wafer when the wafer is placed on top. The top surface 720 includes a recess 705 configured to facilitate coupling between the pad shaft 510 'and the lift pad 430 and a pedestal 140 ", such as a recess forming the lateral rim 710, And the lift pad 630. In this embodiment, Although the pedestal 140 " may be described generally as having a circular shape when viewed from above and extending to a pedestal diameter, the footprint of the pedestal 140 " may be different from that of the pedestal 140 " It may vary from the circle to accommodate the features.

As shown, a pedestal 140 " is connected to an actuator 515 ', which is configured to control the motion of the pedestal 140 ". Specifically, the pedestal control portion 450 is coupled to the actuator 515 'to control the motion of the pedestal 140 ". Specifically, the center shaft 510 '' is coupled to the actuator 515 'and the pedestal 140' 'such that the center shaft 510' 'extends between the actuator 515' and the pedestal 140 ' do. The center shaft 510 " is configured to move the pedestal 140 " along the central axis 471 '. As such, the motion of the actuator 515 'is converted to the motion of the center shaft 510 ", which eventually translates into motion of the pedestal 140 ".

In one embodiment, the pedestal top surface 720 includes a plurality of wafer supports (not shown) formed at the top, and the wafer supports support the wafer 590 at a wafer support level above the pedestal top surface 720 . The wafer supports provide a uniform and small gap between the pedestal 140 " and any wafer 590 disposed at the top.

The pedestal 140 "includes a recess 705 centered on the pedestal upper surface 720 and extending from the central axis 471 ', the recess 705 having a recess height, (705) has a recess bottom surface (706). That is, the recess 705 overlies the central portion of the pedestal upper surface 720. In one embodiment, the recess bottom recess surface 706 includes a plurality of pad supports formed at the top, and the pad supports (e.g., MCAs) include a pad support level As shown in FIG. In another embodiment, the MCAs are disposed on the lower surface of the lift pad 630, as described further in conjunction with FIG. 7f.

In addition, the pedestal 140 " is shown with two segments 140a " and 140b " for illustrative purposes only. For example, pedestal 140 '' may be formed in two segments to accommodate formation during fabrication of a plurality of heating elements 471 'and / or a plurality of cooling elements (not shown). As previously disclosed, pedestal 140 " is considered to be one element and is recognized to be formed using any suitable fabrication process.

In assembly 700B, the lift pad 630 includes a pad top surface 775 extending from the center axis 471 'to a pad diameter 777. The lift pad 630 is configured to be supported on the recess bottom surface 706 when positioned within the recess 705 and the recess 705 is configured to receive the lift pad 630. Specifically, the lift pad top surface 775 is configured to allow the wafer 590 to move relative to the wafer support portion < RTI ID = 0.0 > 140 " of the pedestal 140 ", such as in a process position (e.g., when performing plasma processing, When placed on top of the wafer 590. That is, the lift pad top surface 775 lies below the wafer support level when the pad bottom surface 632 of the lift pad 630 is supported on a plurality of pad supports (e.g., MCAs 745) . In addition, the lift pad 630 is configured to move with the pedestal 620 as it is supported on the pad supports.

As shown, the lift pad 630 is connected to an actuator 515 'configured to control the movement of the lift pad 630. For example, the lift pad control 455 is coupled to the actuator 515 'to control the movement of the lift pad 630. Specifically, the pad shaft 560 'is coupled to the actuator 515' and the pedestal 140 '' such that the pad shaft 560 'extends between the actuator 515' and the pedestal 140 '' . The pad shaft 560 'is configured within a center shaft 510 " that is connected to the pedestal 140 ". Specifically, the pad shaft 560 'is configured to move the lift pad 630 along the central axis 471'. As such, the motion of the actuator 515 'is switched to the motion of the pad shaft 560 ", which eventually translates into the motion of the lift pad 630. In one embodiment, the actuator 515 'controls movement of both the lift pad 630 and the pedestal 140 ".

Specifically, as will be described more fully below with respect to Figures 10A-D, the pad shaft 560 'is configured to separate the lift pad 630 from the pedestal 140 " for lift pad rotation . For example, the lift pad 630 may be configured such that the pedestal 140 " is positioned at the upper position 720 such that the lift pad 630 is detached from the pedestal upper surface 720 by a process rotation displacement for the purpose of rotating the lift pad 630. [ To move upward with respect to the pedestal upper surface 720 along the central axis 471 '. The pad shaft 560 'is also configured to lower the lift pad 430 to be supported on the pedestal 140'. In one embodiment, to prepare for lift pad rotation, lift pad 630 moves upward relative to pedestal 140 ". That is, the lift pad 630 is detached from the pedestal upper surface 720 by the process rotation displacement 1040 (see FIGS. 10B and 10C), and the wafer placed on the lift pad 630 is removed from the pedestal 140 ''. The lift pad 630 is configured to move up the pedestal upper surface 720 along the central axis 471 " when the pedestal 140 " is in the upward position. In one embodiment, the pedestal 140 " is in the uppermost up position during the lift pad 630 rotation. Specifically, when the lift pad 630 is separated from the pedestal 140 ", the lift pad 630 is positioned between at least a first angular orientation and a second angular orientation (e.g., between 0 and 180 degrees) And is configured to rotate against the pedestal upper surface 720. This rotation reduces the effects of pedestal hardware signatures during processing and also reduces the effects of chamber hardware signatures during processing.

In other embodiments, the lift pad 630 provides lift pin functionality to raise and lower the wafer during wafer transfer and processing. Specifically, when the pedestal is in the lowermost down position so that the lift pad 630 is separated from the central pedestal upper surface 621 by a displacement which is sufficiently large for the entry of the end-effector arm, the lift pad 630 is positioned on the center pedestal upper surface 621, RTI ID = 0.0 > 720 < / RTI >

7B, the lift pad and pedestal 140 '' of the pedestal configuration 600 includes an elevated rim 710 disposed on the outer edge of the pedestal top surface 720, (710) is configured to block lateral movement of the wafer disposed on the pedestal (140 "). That is, the rim 710 is a step on the pedestal upper surface 720 that is high enough to block motion of the wafer. For example, as the wafer is supported on the pedestal upper surface 720, the raised rim 710 forms a groove that blocks lateral movement of the wafer.

7C illustrates a lift pad and pedestal configuration 600 ', in which the lift pad 630 is smaller than the wafer, based on the configurations previously introduced in Figs. 6, 7A and 7B, according to one embodiment of the present disclosure. Lt; RTI ID = 0.0 > 700C < / RTI > The lift pad and pedestal configuration 600 'includes a pedestal 140' '' and a lift pad 630. More specifically, the lift pad and pedestal configuration 600 'of FIG. 7c is similar to the lift pad and pedestal configuration 600 of FIG. 7b and includes the same advantages and advantages (eg, For example, improved film uniformity during deposition processes. In other words, the non-uniformities introduced by the pedestal signature can be distributed symmetrically across the wafer during wafer processing through wafer rotation using a lift pad without rotating the pedestal. However, the lift pad and pedestal configuration 600 'also includes a lift pin assembly configured for delivery of a corresponding wafer (e.g., wafer 590).

The lift pin assembly of assembly 700C includes a plurality of lift pins 557 '. For purposes of illustration, pedestal 140 '' 'and lift pad 630, in accordance with one embodiment of the present disclosure, are at a level that allows extension of lift pin 557' for wafer transfer purposes. Specifically, an end-effector arm (not shown) carrying a wafer (with or without carrier ring) receives the wafer from a position or lift pins 557 'for transferring the wafer to lift pins 557' The lift pins 557 'are displaced from the central axis 471' and extend from the plurality of pedestal shafts 518 'disposed in the pedestal 140' 'in such a manner that they can be steered to the desired position. Corresponding pedestal shafts 518 'are configured to receive corresponding lift pins 557'. As shown, one or more pedestal shafts 518 'and corresponding lift pins 557' may be configured within the lift pin assembly to lift and dispose or remove the wafer during wafer transfer. As shown, each of the lift pins 557 'is coupled to a corresponding lift pin support 555' and lifts the wafer over the pedestal top surface 720 during wafer transfer and processing and / 0.0 > pedestal < / RTI > shaft 518 ' The lift pin support 555 'is configured to move relative to the pedestal top surface 720 parallel to the center axis 471'. In addition, lift pin supports 555 'are coupled to lift pin actuator 550'. In addition, the previously introduced lift pin control 122 controls the movement of lift pin actuator 550 'to affect the movement of lift pins 557'. The lift pin support 555 'may be of any shape (e.g., an annular ring washer, an arm extending from the annular base, etc.).

7D is a top view of the lift pad versus the pedestal of the substrate processing system of FIG. 6 including the lift pad and pedestal configuration 600 or 600 'of FIGS. 7A-7C, where the lift pad is smaller than the wafer, FIG.

The high temperature bearing 755 is positioned within the pad shaft 560 'and is configured to evenly position the lift pad 630 within the recess 705 of the pedestal 140' or 140 ". To handle high temperatures, the wear surfaces are preferably made of a hard, chemically compatible material such as sapphire. The bearing centering is insensitive to the relative thermal expansion of the bearing components, shaft, and pedestal materials. In one embodiment, the conical clamping surfaces of the sapphire bearing rings may be spring loads using load distribution washers, spring washers, and an assembly of retaining rings of material adapted for high temperature and corrosive operation. The bearing is clamped to the minimum energy in the center position and maintains its center position with changes in temperature. The sapphire contact ring prevents indentation of the soft pedestal material.

Specifically, the interface between the lift pad 630 and the pedestal 140 " / 140 " 'is shown, and in particular, during the process sequences, the pad gaps that set the MCAs to control and / . For example, FIG. 7D illustrates sapphire balls 740 and 745 (e.g., MCAs) that swag into a lift pad 630. Specifically, the balls 740 and 745 slightly protrude above the corresponding surface with a few millimeters of operating system (OS) at process temperature. Sapphire balls act to contact the pedestal (140 '' / 140 '' ') of the minimum contact area (MCA) to minimize thermal conduction through contact with the poor thermal conductive material. In addition, the sapphire contact ring prevents indenting of the softer pedestal material.

7E is a perspective view of the top surface 631 of the lift pad 630 shown in FIG. 7D, including the MCAs 740, according to one embodiment of the present disclosure. In one embodiment, when the lift pad 630 is supported on the recess bottom surface 706, the wafer referencing MCAs 740 are positioned on the top of the top surface 631 so that the pad top surface 631 is below the wafer support level. (E.g., MCAs) located on the top surface of the pedestal 720 is greater than about 0.002 " or greater by about 0.002 " above the top surface 631 of the pedestal 720. In one embodiment, since the separate pedestal wafer supports The wafer-related MCAs 740 do not contact the wafer 590 when the lift pad 630 is supported on the pedestal 140 " / 140 " '. Wafer supports disposed on the pedestal upper surface 720 of the pedestal 140 " / 140 " 'are configured to support the wafer 590 when placed on top at a wafer support level above the top surface 720.

7F is a perspective view of the bottom surface 632 of the lift pad 630 shown in FIG. 7D, including the MCAs 745, according to one embodiment of the present disclosure. In one embodiment, the wafer-related MCAs 745 are 0. 004 " over the bottom surface 632. This is to provide uniform, repeatable heat resistance to the pedestal 140 " / 140 " MCAs 745 are positioned above the recess bottom surface 706 (in this embodiment, the top surface 704) to ensure a uniform, repeatable gap between the lift pad 630 and the pedestal 140 " / 140 " (Not shown) disposed on the recess bottom surface 706, configured to support the lift pad 630 with a pad support level.

8 is a flow diagram 800 illustrating a method of operating a process chamber configured for depositing a film on a wafer, according to one embodiment of the present disclosure, the method advantageously includes the steps of processing both chamber asymmetry and pedestal asymmetry, To provide rotation of the wafer without rotation of the pedestal within the process chamber. In the embodiments of the present disclosure, the flowchart 800 is implemented within the systems of Figs. 1-7 and lift pad and pedestal configurations. The operations of flowchart 800 are applicable to wafer-size lift pads and pedestal configurations as shown in Figs. 4 and 5A-5C embodiments, and in other embodiments, Figs. 6 and 7A-7F The present invention is applicable to lift pads and pedestal configurations including lift pads sized smaller than wafers, as shown in Fig.

At operation 805, the method includes moving the lift pad and pedestal configuration to a downward position to receive the wafer. In one embodiment, the pedestal is in its lowest down position. In a lift pad and pedestal configuration that includes a lift pin assembly, the lift pins may be extended for wafer transfer. In a lift pad and pedestal configuration that does not include a lift pin assembly, the lift pad (e.g., smaller than the wafer) may be separated from the pedestal upper surface by a displacement sufficiently large for entry of the end-effector arm for wafer transfer purposes have. In operation 810, the wafer is placed on an assembly including a lift pad and a pedestal configuration, and the lift pad is configured to be supported on the pedestal. For example, this may involve placing the wafer on the extended lift pins or placing the wafer on the extended lift pads. The lift pins or lift pads are lowered such that the wafer is supported on the pedestal upper surface, the lift pad upper surface, or the wafer supports of the ESC chuck surface.

The pedestal movement is controlled so that the pedestal is moved up and down along the center axis of the pedestal. In one embodiment, the coupling mechanism converts the motion of the pedestal into a lift pad and a lift pad in a pedestal configuration. For example, after the wafer is transferred at operation 820, the lift pad and pedestal configuration is moved to the process position. In the process position, the lift pad is supported on the pedestal as previously described. Also, the lift pad is in a first orientation relative to the pedestal and / or chamber. The first orientation may be arbitrary. For example, both the lift pad and the pedestal may be positioned in a 0 [deg.] Angular orientation within the chamber.

In operation 825, the method includes processing the wafer in a first orientation with a first number of processing cycles. For example, the deposition of one or more films may implement an atomic layer deposition (ALD) process, known as atomic layer chemical vapor deposition (ALCVD). ALD is highly conformal, smooth, and produces very thin films with excellent physical properties. ALD uses volatile gases, solids, or vapors that are introduced (or pulsed) sequentially onto a heated substrate. In one day ALD cycle, four operations are performed and may be defined as an A-P-B-P sequence. In Step A, the first precursor is introduced as a gas and absorbed (or adsorbed) into the substrate. In step P immediately after step A, the reactor chamber is cleared of the gaseous precursor. In step B, the second precursor is introduced as a gas and reacts with the absorbed precursor to form a monolayer of the desired material. Immediately after step B, in step P, the reactor chamber again delivers the gaseous second precursor. By adjusting this A-P-B-P sequence, the films produced by ALD are deposited at one time by repeated switching of a sequential flow of two or more reactive gases onto the substrate. In that way, the thickness of the film may be adjusted according to the number of cycles performed in the A-P-B-P sequence. The first number of cycles may be defined as the value X. To illustrate these embodiments, which illustrate a lift pad and pedestal configuration that advantageously filters both chamber asymmetry and pedestal asymmetry, the wafer can be rotated without rotation of the pedestal within the process chamber during processing. In order to illustrate these embodiments, May be 50 cycles.

At act 830, it includes raising the pedestal to an upward position. In one embodiment, the pedestal is raised to the uppermost up position. By moving the pedestal to the upward position, the lift pad is also raised upward relative to the pedestal (e.g., the top surface of the pedestal) such that the wafer disposed on the lift pad is separated from the pedestal 820. In one embodiment, the coupling mechanism raises the lift pad when the pedestal is near the upper end of the movement. That is, the surface contact to the pedestal 820 of the lift pad 830 is broken, causing the lift pad to rotate freely. Specifically, the lift pad is separated from the pedestal by a process rotation displacement (e.g., approximately 1 mm). In this manner, the wafer placed on or supported by the lift pad is also separated from the pedestal.

The method includes the step of rotating the lift pad 830 against the pedestal 820 (e.g., the top surface of the pedestal) when the lift pad 830 is removed from the pedestal 820 . Specifically, the lift pad 830 rotates from the first orientation to the second orientation relative to the pedestal 820. For example, the second orientation may be 180 [deg.] From a first orientation (e.g., a first orientation of 0 [deg.]).

At operation 845, the method includes lowering the lift pad to be supported on the pedestal. Also, at operation 850, the method includes moving the pedestal, and correspondingly the lift pad, back to the process position. In one embodiment, operations performed at 845 and 850 may occur simultaneously through the action of the coupling mechanism to lower the pedestal back into the process position such that the lift pad is also lowered until it is supported on the pedestal do.

In operation 855, the method includes processing the wafer during a second number of processing cycles (e.g., each cycle includes an A-P-B-P sequence), with the lift pad in a second orientation relative to the pedestal. The second number of cycles may be defined as the value Y. [ To illustrate these embodiments disclosing lift pads and pedestal configurations that advantageously filter both chamber asymmetry and pedestal asymmetry, and that can rotate the wafer without rotation of the pedestal within the process chamber during processing, the Y number of cycles 50 cycles.

In that way, the thickness of the film may be adjusted according to the total number of cycles (e.g., X + Y) that performed the A-P-B-P sequence. Because the wafer is also rotating against the pedestal during the second number of cycles, both chamber asymmetry and pedestal asymmetry are filtered, which provides improved film uniformity during wafer processing.

In the example provided above, the first number of cycles is X, the second number of cycles is Y, and both X and Y comprise 50 cycles for the total number of 100 cycles performing the A-P-B-P sequence. That is, the first number of processing cycles X may be one-half of the total number of cycles performed in the first orientation, and the second number of processing cycles Y may be a cycle performed in the second orientation Lt; / RTI > As such, 50 cycles are performed in a first angular orientation (e.g., 0 [deg.]) And another 50 cycles are performed in a second angular orientation (e.g., 180 [deg.]).

While embodiments of the present disclosure are described with reference to a first orientation and a second orientation, other embodiments are suitable for performing wafer processing using one or more orientations (e.g., 1, 2, 3, etc.) . The orientations may be separated by the same angles in one embodiment, or may be separated by unequal angles in another embodiment. Also, one or more cycles of wafer processing (e.g., ALD, PECVD, etc.) are performed in each of the orientations. The number of cycles performed in each of the orientations may, in one embodiment, be equally distributed or may be unequally distributed in another embodiment. That is, other embodiments may be used where two or more sets of cycles are appropriate (e.g., between the lift pad and the pedestal) at two or more relative angular orientations, and each of the sets has the same number of processing cycles (e.g., Includes the APBP sequence), or may include different numbers of processing cycles.

At 860, the method includes moving the lift pad and pedestal configuration to a downward position for wafer removal from an assembly comprising a lift pad and pedestal configuration. In one embodiment, the pedestal is in its lowest down position. As previously described, in lift pads and pedestal configurations that include lift pin assemblies, the lift pins may be extended for wafer transfer. In a lift pad and pedestal configuration that does not include a lift pin assembly, the lift pad (e.g., smaller than the wafer) may be separated from the pedestal upper surface by a displacement sufficiently large for entry of the end-effector arm for wafer transfer purposes have. As such, the wafer may be removed from the extended lift pins or extended lift pads using the end-effector arm.

FIGS. 9A and 9B illustrate an embodiment of the present invention, including a rotation of the wafer without rotation of the pedestal within the process chamber during processing, wherein the lift pad is approximately sized to match the wafer, Are diagrams illustrating the motion sequence of a lift pad and pedestal configuration, filtering both pedestal asymmetry.

Specifically, FIG. 9A illustrates the wafer size lift pad and pedestal configuration 400 first introduced in FIGS. 4 and 5A and 5B. The lift pad and pedestal arrangement 400 includes a lift pin assembly including a pedestal 140 ', a lift pad 430, and lift pins 557. In the delivery position, the lift pad and pedestal configuration 400 is configured such that the pedestal 140 'is in a downward position using a lift pad supported on the pedestal. The lift pins 557 extend from the top surface of the lift pad 430 for wafer transfer purposes, as shown by the dotted circle labeled " A ". Figure 9A also shows the lift pad and pedestal configuration 400 of the pre-coat position, and the pre-coat layer and the undercoat layer of the film are deposited in the process chamber before the wafers are processed. As shown by the dotted circle labeled " B ", the lift pad 430 is supported on the pedestal 140 '. In addition, the lift pins 557 may be positioned such that when the pre-coat deposition occurs and the top of the lift pins 557 is in the proper position during the chamber pre-coat when the wafer is not on the lift pad and pedestal configuration 400, Lt; RTI ID = 0.0 > 430 < / RTI > 9A also illustrates a lift pad and pedestal configuration 400 of process positions in which one or more films may be deposited (e.g., a PECVD process and an ALD process) during wafer processing in a single-station system and a multi-station system . For example, wafer processing may also implement an atomic layer deposition (ALD) process, also known as atomic layer chemical vapor deposition (ALCVD). ALD produces very thin films that are highly conformal, smooth, and possess excellent physical properties. As previously introduced, four operations are performed in one ALD cycle (e.g., an A-P-B-P sequence). The lift pad 430 is supported on the pedestal 140 'and the lift pins 557' are pushed into the position in the body of the pedestal 140 ', as shown by the dotted circle labeled "C" (Retreat). FIG. 9A also shows the lift pad and pedestal configuration 400 of the rotation position, where the pedestal is in an upward position (e.g., topmost upward position). The lift pad 430 is moved from the pedestal 140 'to the process rotation displacement < RTI ID = 0.0 > 140 ' ' .

9B provides a more detailed description of FIG. 9A, wherein the lift pad is approximately sized to match the wafer, and the rotation of the wafer without rotation of the pedestal within the process chamber during processing And schematically illustrates the motion sequence of the lift pad and pedestal configuration 400 first introduced in FIGS. 4 and 5A and 5B, which advantageously filters both chamber asymmetry and pedestal asymmetry.

In the delivery position, the lift pad and pedestal configuration 400 is configured such that the pedestal 140 'is in a downward position with the lift pad 430 supported on the pedestal 140'. Specifically, the lift pad and pedestal configuration 400 is in a delivery position ready to receive and / or remove the wafer, such that the lower end of the pedestal 140 'is at a level within the corresponding chamber indicated by line 901. Specifically, in one embodiment, the pedestal 140 'is at the bottom level and the bottom of the pedestal 140' is at the level indicated by line 902, as well as the level indicated by line 903 associated with the process position, the line 904 associated with the rotation position Is lower than the pre-coat position at the level indicated by < RTI ID = 0.0 > As shown, the lift pad 430 is supported on the pedestal 140 'as previously described. In addition, the lift pins 557 extend beyond the upper surface of the lift pad 430, e.g., in a position for receiving the wafer delivered by the arm of the end-effector.

9B shows a pre-coat level lift pad and pedestal configuration 400 with the lower end of the pedestal 140 'at a level within the corresponding chamber indicated by line 902. It is important to note that the pre-coat position may be defined at any position within the chamber and is not limited to the level indicated by line 902. For example, the pre-coat position may be the same as the process position, and the lift pad and pedestal configuration is positioned for wafer processing (e.g., ALD, PECVD, etc.). As shown, the lift pad 430 is supported on the pedestal 140 'as previously described. In addition, when pre-coat deposition occurs and the wafer is not on a lift pad and pedestal configuration, the lift pins 557 are positioned such that the top of the lift pins only fills the holes with the lift pad 430, It is the proper position during the chamber pre-coat.

Specifically, the pre-coat layer and the undercoat layer of the film are deposited in the process chamber before the wafers are processed. When included in a lift pad and pedestal configuration, the pre-coat and / or undercoat film may also coat the carrier rings and make contact with the wafer. Applying a pre-coat to the chamber and lift pad and pedestal configuration (e.g., contact support structures such as MCAs), and selecting a selectable carrier ring having a pre-coat film similar to the film to be formed on the wafer during processing Is believed to improve film formation on the wafer. As such, a pre-coat film is formed before the wafer is introduced over the lift pad and pedestal configuration. In addition, pre-coats, as well as any other undercoats in the wafer processing atmosphere, work in combination for improved wafer film uniformity. For example, a typical undercoat thickness may be approximately 3 占 퐉, and a precoat thickness is approximately 0.5 占 퐉.

FIG. 9B also illustrates a lift pad and pedestal configuration 400 of a process position in which one or more films may be deposited during wafer processing (e.g., a PECVD process and an ALD process) in a single-station system and a multi- do. Specifically, the pedestal 140 'is at a level within the corresponding chamber indicated by line 903. As shown, the pedestal 140 'is in the uppermost position or level vicinity in the chamber. It is important to note that the process position may be defined at any position and / or level within the chamber, and not limited to the level indicated by line 903, depending on the chamber and / or processes being implemented. As shown, the lift pad 430 is supported on the pedestal 140 'as previously described. In addition, the lift pins 557 are positioned such that the top may also be positioned at any position within the pedestal 140 'or the lift pad 430, such that the top of the lift pins is within the body of the pedestal 140' . In addition, the lift pad 430 is in a first angular orientation relative to the pedestal 140 '.

Figure 9b also shows the lift pad and pedestal configuration 400 of the rotation position where the pedestal is in the upward position. In one embodiment, the lower end of the pedestal 140 'is at the uppermost level in the corresponding chamber, indicated by line 904. The lift pad 430 is separated from the pedestal 140 'by a process rotation displacement 940 (e.g., approximately 1 mm). In one embodiment, the coupling mechanism raises the lift pad 430 when the pedestal 140 'is near the upper end of the movement such that the lift pad is separated from the pedestal upper surface by a rotation displacement 940. Specifically, for a particular distance "d" moved by the pedestal 140 ', when the pedestal 140' reaches the upper end of the movement, the lift pad 430 may be an argument of "d" Moves by a larger distance. For example, when the pedestal 140 'reaches the upper end of the movement, the lift pad 430 is separated from the pedestal 140' by a rotation displacement 940, which is twice the distance "d". The lift pad 430 may then be rotated from a first angular orientation to a second angular orientation relative to the pedestal 140 ', for example. The lift pad and pedestal configuration 400 may then be returned to the process position for additional processing cycles, or to the delivery position for wafer transfer.

9C illustrates a pedestal 140 'of a lift pad and pedestal configuration 400, wherein the lift pad is approximately sized by the wafer during a first process sequence, a rotation sequence, and a second process sequence, according to one embodiment of the present disclosure. ) Of the lift pad 430 with respect to the lift pad 430. As shown in Fig. Specifically, FIG. 9C shows that while the configuration 400 is in the rotation position, while the lift pad and pedestal configuration 400 are in the process position for the first number of processing cycles, Illustrate relative orientations of the lift pad 430 and the pedestal 140 '(e.g., relative to each other and / or to the coordinate system 950 in the chamber) during the process position for the cycles.

As shown, during the first number of processing cycles, the lift pad and pedestal configuration 400 is in the process position. Specifically, both the lift pad 430 and the pedestal 140 'have an angular orientation of 0 degrees relative to the coordinate system 950 within the chamber. In addition, the lift pad 430 has a first angular orientation of 0 degrees relative to the pedestal 140 '(i.e., the pedestal 140' provides a coordinate system).

In addition, FIG. 9C illustrates the rotation of the lift pad 430 relative to the pedestal 140 'when the lift pad and pedestal configuration 400 are in the rotation position. Specifically, the pedestal 140 'is statically maintained in an angular orientation of 0 degrees (e.g., relative to the coordinate system 950) while the lift pad 430 rotates 180 degrees from the 0 degree angular orientation do. That is, the pedestal 140 'does not rotate. As shown, the lift pad 430 is passing an angular orientation of 71 degrees.

Further, during a second number of processing cycles, the lift pad and pedestal configuration 400 is again in the process position. However, because of the rotation of the lift pad, the pedestal 140 'still has an angular orientation of 0 degrees relative to the coordinate system 950 in the chamber, and the lift pad has an angular orientation of 180 degrees. In other words, when processing into the first number of cycles, the lift pad 430 has an angular orientation of 0 degrees relative to the pedestal 140 ', and when processing with the second number of cycles, the lift pad 430 430 have an angular orientation of 180 after the rotation, for example, with respect to the pedestal 140 '.

FIGS. 10A-10C illustrate an embodiment of the present invention wherein the lift pad is smaller than the wafer and includes rotation of the wafer without rotation of the pedestal within the process chamber during processing, advantageously filtering both chamber asymmetry and pedestal asymmetry , A lift pad, and a pedestal configuration. More specifically, Fig. 10B shows the lift pad and pedestal configuration 600 first introduced in Figs. 6 and 7A and 7B. FIG. 10C illustrates a lift pad and pedestal configuration 600 ', which was first introduced in FIG. 7C and additionally includes a lift pin assembly.

Specifically, FIG. 10A illustrates a lift pad and pedestal configuration 600, including a pedestal 140 '' and a lift pad 630. The lift pad and pedestal configuration 600 is configured such that the lift pad 630 provides a lifting operation and eliminates the need for a lift pin assembly. Specifically, in the delivery position, the lift pad and pedestal configuration 600 is configured such that the pedestal 140 " has a lift pad 630 separated from the pedestal 140 " by a displacement that is sufficiently large for the entry of the end- So as to be in a downward position. 10A illustrates a lift pad and pedestal configuration 600 of process positions in which one or more films may be deposited (e.g., a PECVD process and an ALD process) during wafer processing in a single-station and multi-station system. 10A shows that the pedestal 140 " is in an upward position (e.g., the uppermost up position) and the lift pad 630 is separated from the pedestal 140 " by a process rotation displacement A lift pad and pedestal configuration 600 of the rotation position.

10B provides a more detailed description of FIG. 10A and illustrates a method of fabricating a wafer in which the lift pad is smaller than the wafer and includes rotation of the wafer without rotation of the pedestal within the process chamber during processing, The motion sequence of the lift pad and pedestal configuration 600, which filters both asymmetric and pedestal asymmetry, is illustrated.

In the delivery position of the lift pad and pedestal configuration, the lower end of the pedestal 140 " is at a level in the corresponding chamber indicated by line 901. Specifically, the pedestal 140 " is at the lowest level in one embodiment. In one embodiment, the delivery position is lower than the pre-coat position indicated by line 902, as well as the process position indicated by line 903, and the rotation position indicated by line 904. As shown, the lift pad 630 can be used to lift the arm of the end-effector (see FIG. 10B), which is sufficient to allow the arm of the end-effector to be placed on the lift pad 630 and removed from the lift pad 630 And is separated from the lift pad 140 " by displacement 969. In one embodiment, the coupling mechanism raises the lift pad 630 when the pedestal 140 '' is near the upper end of the movement so that the lift pad 630 is separated from the pedestal upper surface by displacement 969.

Figure 10B also shows the lift-pad and pedestal configuration 600 of the pre-coat position, where the pre-coat and undercoat layers of the film are deposited in the process chamber before the wafers are processed. In the pre-coat position, the lower end of the pedestal 140 " is at a level within the corresponding chamber, e.g., line 902. The pre-coat position may be defined as any position in the chamber and is not limited to the level indicated by line 902. [ As shown, the lift pad 630 is supported on the pedestal 140 " as previously described.

In the process position of the lift pad and pedestal configuration 600, the lower end of the pedestal 140 " is at a level within the corresponding chamber indicated by line 903. In one embodiment, the pedestal 140 " may be positioned in the uppermost position or level near the level of the chamber, although the process position may be at any level within the chamber, depending on the chamber and / have. As shown, the lift pad 630 is supported on the pedestal 140 ". In addition, the lift pad 630 is in a first angular orientation relative to the pedestal 140 ".

In the lift position of the lift pad and pedestal configuration 600, the lower end of the pedestal 140 in one embodiment is at the uppermost level within the corresponding chamber indicated by line 904. The lift pad 630 is separated from the pedestal 140 " by a process rotation displacement 1040 (e.g., approximately 1 mm). In one embodiment, when the pedestal 140 " is in the vicinity of the upper end of the movement so that the lift mechanism 630 is separated from the pedestal upper surface by the rotation displacement 1040, The pad 630 is raised. In one embodiment, when the pedestal 140 '' is in the vicinity of the upper end of the movement so that the lift pad 630 is separated from the pedestal upper surface by the rotation displacement 1040, the coupling mechanism lifts the lift pad 630 . For a particular distance " f " moved by the pedestal 140 ", for example, the lift pad 630 may have a factor of " f " For example, twice the " f "). The lift pad 630 may then be rotated from a first angular orientation to a second angular orientation (e.g., relative to the pedestal 140 ") and then returned to the process position for additional processing cycles or returned to the delivery position for wafer transfer.

10C provides a more detailed description of FIG. 10A, wherein the lift pad 630 is smaller than the wafer and, in accordance with one embodiment of the present disclosure, is positioned within the process chamber during processing without the rotation of the pedestal 140 " And a lift pin assembly that advantageously filters both chamber asymmetry and pedestal asymmetry, including a rotation of the lift pad and pedestal configuration 600 '. As previously described, the lift pad and pedestal configuration 600 'includes a lift pad 630, a pedestal 140' '', and a lift pin assembly.

In the delivery position of the lift pad and pedestal configuration 600 ', the lower end of the pedestal 140' '' is at a level in the corresponding chamber indicated by line 901. Specifically, pedestal 140 " 'is at the lowest level in one embodiment. In one embodiment, the delivery position is lower than the pre-coat position indicated by line 902, as well as the process position indicated by line 903, and the rotation position indicated by line 904. As shown, the lift pad 630 is supported on the pedestal 140 " 'as previously described. In addition, the lift pins 557 'can be used to lift the pedestal 140 "' and the lift < RTI ID = 0.0 > Extends beyond the upper surface of the pad 630.

Figure 10c also shows the lift pad and pedestal configuration 600 'of the pre-coat position, where the pre-coat and undercoat layers of the film are deposited in the process chamber before the wafers are processed. In the pre-coat position, the lower end of the pedestal 140 '' 'is at a level in the corresponding chamber, indicated for example by line 902. The pre-coat position may be defined as any position in the chamber and is not limited to the level indicated by line 902. [ As shown, the lift pad 630 is supported on the pedestal 140 " 'as previously described. In addition, when pre-coat deposition occurs and the wafer is not on the lift pad and pedestal configuration, the lift pins 857 are positioned such that the top of the lift pins only fills the holes with the lift pad 830, It is the proper position during the chamber pre-coat.

In the process position of the lift pad and pedestal configuration 600 ', the lower end of the pedestal 140' '' is at a level in the corresponding chamber indicated by line 903. As shown, the pedestal 140 '' 'is in the uppermost position or level in the chamber as previously described, although the process position may be at any level within the chamber. As shown, the lift pad 630 is supported on the pedestal 140 " 'as previously described. In addition, the lift pins 557 'are positioned such that the top portion of the lift pins is within the pedestal 140' '', although the top portion may also be positioned anywhere within the pedestal 140 '' '.

In the lift position of the lift pad and pedestal configuration 600, the lower end of the pedestal 140 '' 'in one embodiment is at the uppermost level within the corresponding chamber indicated by line 904. The lift pad 630 is separated from the pedestal 140 " 'by a process rotation displacement 1040 (e.g., approximately 1 mm). In one embodiment, when the coupling mechanism is in the vicinity of the upper end of the movement so that the pedestal 140 '' 'is positioned such that the lift pad 630 is separated from the pedestal upper surface by the rotation displacement 1040, the pad shaft 560' Thereby raising the lift pad 630. In one embodiment, when the pedestal 140 '' 'is near the upper end of the movement so that the lift pad 630 is separated from the pedestal upper surface by a rotation displacement 1040, the coupling mechanism moves up the lift pad 630 . For example, for a particular distance " f " moved by the pedestal 140 '' ', the lift pad 630 may be moved by the pedestal 140' '' (E.g., twice the " f "). The lift pad 630 may then be rotated from a first angular orientation to a second angular orientation (e.g., relative to the pedestal 140 '' ') and then to a process position for additional processing cycles Or returned to the delivery position for wafer transfer.

10D illustrates a pedestal 140 '' in a lift pad and pedestal configuration 600 where the lift pad 630 is smaller than the wafer during the first process sequence, the rotation sequence, and the second process sequence, according to one embodiment of the present disclosure. ) Or the lift pad 630 relative to the lift pad and pedestal 140 '' 'of the pedestal configuration 600'. In particular, FIG. 10D illustrates a lift position for a second number of processing cycles while the lift pad and pedestal configuration 600/600 'is in a process position for a first number of processing cycles, (E.g., relative to each other and / or in-chamber coordinate system 1050) of pad 630 and pedestal 140 "/ pedestal 140 '".

As shown, during a first number of processing cycles, the lift pad and pedestal configuration 600/600 'are in the process position. Specifically, both lift pad 630 and pedestal 140 " / 140 " 'have an angular orientation of 0 degrees relative to the coordinate system 1050 of the chamber. In addition, the lift pad 630 has a first angular orientation of 0 degrees relative to the pedestal 140 '' / 140 '' '(i.e., the pedestal 140' '/ 140' '' provides a coordinate system).

In addition, Figure 10D illustrates the rotation of the lift pad 630 relative to the pedestal 140 " / 140 " 'when the lift pad and pedestal configuration 600/600' are in the rotation position. Specifically, while the lift pad 630 is rotating 180 degrees from the 0 degree angular orientation, the pedestal 140 " / 140 " '(e.g., relative to the coordinate system 1050) And is held fixedly in the angular orientation. That is, the pedestals 140 " and 140 " 'do not rotate. As shown, the lift pad 630 is passing through an angular orientation of 71 °.

Further, during a second number of processing cycles, the lift pad and pedestal configuration 600/600 'are again in the process position. However, due to the rotation of the lift pad, the pedestal 140 " / 140 " 'still has an angular orientation of 0 degrees with respect to the coordinate system 1050 within the chamber, and the lift pad has an angular orientation of 180 degrees. In other words, when processing into the first number of cycles, the lift pad 630 has an angular orientation of 0 DEG with respect to the pedestal pedestal 140 " / 140 " 'and the second number of cycles When processing, the lift pad 630 has an angular orientation of 180 degrees relative to the pedestal pedestal 140 " / 140 " 'after rotation, for example.

Lifting Pad Lift Mechanism

According to embodiments of the present disclosure, the lift pad lift mechanism disclosed in Figs. 11-17 generally applies to lift pads and pedestal configurations previously introduced in Figs. 1-10. That is, various embodiments of the disclosed lift pad lifting mechanism include a lift pad having a diameter smaller than the diameter of the wafer and a lift pad having a lift pad having a diameter sized to fit approximately the diameter of the wafer and a pedestal- As shown in FIG.

11A is a perspective view of a substrate processing system including a lift pad and pedestal configuration 1100 in accordance with one embodiment of the present disclosure and includes a short stroke pad elevation (not shown) configured to separate a lift pad (not shown) from a pedestal 140- Mechanism 440-A is illustrated. The lift pad and pedestal configuration 1100 is located within the mainframe 1105 and the mainframe 1105 is positioned into the processing chamber (e.g., as is fixed within the processing chamber). The movement of the pedestal 140-A is provided for the mainframe and the movement of the lift pad is transferred to the mainframe 1105 (with the pedestal 140-A) and the pedestal 140- a), respectively). The lift pad separation from the pedestal 1140-A may be enabled for the purpose of rotating the lift pad (and the wafer disposed thereon) against the pedestal 140-A. The lift pad separation may also be enabled to allow access by the end-effector for wafer transfer (e.g., wafer placement or removal from the lift pad).

The lift pad and pedestal configuration 1100, including the short stroke pad lift mechanism 440-A, may be used in embodiments such as the lift pad and pedestal configurations shown in Figures 4, 5A-5C, 9A-9C, , And a lift pad having a size substantially similar to that of the wafer (e.g., substantially similar in diameter dimensions to the lift pad and wafer). In addition, the lift pad and pedestal configuration 1100, including the short stroke pad lift mechanism 440-A, is shown in Figures 6 and 7A-7F and 10A-10D in accordance with embodiments of the present disclosure. (E.g., the diameter of the lift pad is smaller than the diameter of the wafer), such as a raised lift pad and pedestal configurations. In some embodiments, the lift pad and pedestal configuration 1100 allows integration with a carrier ring assembly (not shown). In yet other embodiments, the lift pad and pedestal configuration 1100 may be implemented within a single-station and / or multi-station processing tool.

The pedestal 140-A of the lift pad and pedestal configuration 1100 is configured such that the movement of the pedestal 140-A is controlled by the pedestal and lift pad actuators 515 'of FIGS. 7b and 7c and / And may be controlled by the pedestal control unit 450 of FIGS. 4 and 6 so as to be realized through the actuator 515. FIG. In particular, the center shaft 510-A is interconnected to the pedestal 140-A and the pedestal bracket 1101 such that movement of the pedestal bracket relative to the mainframe 1105 translates into movement of the pedestal 140- . For example, the pedestal control unit 450 may control the pedestal control unit 450 through the central shaft 510-A during pre-processing, processing, and post-processing sequences (e. G., Center axis 471- Up and down) to control the movement of the pedestal bracket to induce movement of the pedestal 140-A. In particular, the Z-motor 445-A is rotated such that the rotation of the ball screw is converted to a motion (e.g., in the z-direction) of the carrier parallel to the central axis 471- (Not shown) interconnected to the slide / carrier (not shown) through a ball screw nut (such as a ball screw 443 of a ball screw). The Z-motor 445-A and the ball screw (and other corollary components) are held stationary relative to the main frame 1105 such that movement of the carrier is with respect to the main frame 1105 do. The pedestal brackets 1101 are also interconnected to the carriers so that movement of the carriers is converted into movement of the pedestal brackets 1101. The bellows 420-A facilitates movement of the pedestal 140-A.

The lift pad of the lift pad and pedestal configuration 1100 may be configured such that the movement of the lift pad is achieved through the pedestal and lift pad actuator 515 'of Figures 7b and 7c and / or the pedestal and lift pad actuator 515 of Figure 5b. , And the lift pad control unit 455 of Figs. 4 and 6. In particular, the lift pad control 455 controls the movement of the lift pad shaft 560-A to induce movement within the lift pad. In particular, the pad shaft 560-A extends from the lift pad along the central axis 471-A, as shown in Fig. 13C. For example, the pad shaft 560-A is interconnected to a ferro-seal assembly 425-A interconnected to the pedestal bracket via a short stroke lift pad lift mechanism 440-A. The lift mechanism 440-A was first introduced in FIG. 4 and is further illustrated in FIG. 7A as a short stroke engagement mechanism 440 configured to provide movement of the lift pad relative to the pedestal 140-A. The ferro-seal assembly 425-A is movably attached to the pedestal bracket 1101 through the short stroke pad lift mechanism 440-A. Thus, the movement of the pedestal bracket 1101 is switched to the movement of the pedestal 140-A and the lift pad combined as described above. Particularly, the movement of pedestal bracket 1101, which is not in engagement with short stroke lift pad elevation mechanism 440-A, is controlled by pedestal 140-A and pedestal 140-A so that separation does not occur between the lift pad and pedestal 140- Provide movement of the lift pad. When the lift pad lifting mechanism 440-A is lifted, additional movement by the lift pad to the pedestal 140-A is performed to induce separation. The ferro-seal assembly 425-A includes a short-stroke bellows configured to facilitate movement of the lift pad through the pad shaft. The ferro-seal assembly 425-A is configured to provide a vacuum seal around the pad shaft while the pad shaft 560-A rotates and while the pad shaft 560-A does not rotate .

In addition, the ferro-seal assembly 425-A facilitates rotation of the lift pad shaft 560-A received therein in a vacuum environment. For example, the ferro-seal assembly 425-A may be configured for rotation of the lift pad shaft 560-A and correspondingly for rotation of the lift pad relative to the pedestal 140- And a rotation / theta motor 427-A. The electrical slip ring 1125 is configured to provide transmission of electrical and / or electrical signals through a lift pad shaft 560-A configured for rotation.

The lift pad and pedestal configuration 1100 also includes an upper bearing assembly 755-A and a lower bearing assembly 758 (which were first introduced in FIG. 7D as a high temperature bearing 755 and discussed more fully in connection with FIGS. 16 and 17) (1120). The upper bearing assembly 755-A and the lower bearing assembly 1120 are configured to center the lift pad shaft 560-A within the center shaft 510-A.

FIG. 11B is a perspective view of the substrate processing system of FIG. 11A including a lift pad and pedestal configuration 1100 according to one embodiment of the present disclosure, further illustrating the components of the short stroke pad lift mechanism 440-A. In particular, the pad lifting mechanism 440-A includes an upper hard stop portion 1210 and a lower hard stop portion 1211 both fixed to the main frame 1105. The bracket rollers 1221 and 1222 move in the Z-direction of the slide / carriage (not shown) interconnected with the ball screw (not shown) by movement in the Z-direction of the corresponding bracket rollers 1221 and 1222 To the pedestal bracket. The movement of the short stroke pad lift mechanism 440-A is more fully described with respect to Figures 11c and 12-13.

The short stroke pad lift mechanism 440-A when not in the neutral position causes simultaneous movement of the lift pad and pedestal 140-A to prevent separation between the lift pad and the pedestal 140- . In the neutral position, the upper hard stop 1210 and the lower hard stop 1221 are not engaged, and the lever 1225 is rotated by the bracket rollers 1221, 1222 (for example, by using the lever 1225) ). ≪ / RTI >

On the other hand, when the lift pad lifting mechanism 440-A is lifted, additional movement to the pedestal 140-A is made by the lift pad to induce separation between the lift pad and the pedestal 140-A. In particular, the lever 1225 engages the upper hard stop 1210 to induce movement of the lift pad relative to the pedestal 140-A, thereby providing rotation of the lift pad relative to the pedestal 140- do. In addition, the lever 1225 engages the lower hard stop 1211 to induce movement of the lift pad relative to the pedestal 140-A to allow entry and exit of the end-effector for wafer transfer purposes. In addition, the pivoting yoke 1240 also includes upper and lower bearings of the pad shaft 560-A due to actuation of the lift pad lift mechanism 440-A, Offset and / or offset. In particular, the lift pad lift mechanism 440-A is configured to repeatedly separate the lift pads relative to the pedestal 140-A in a manner that maximizes the life of each of the components. For example, without any moment offset or offset, the bearing assemblies (e.g., high temperature bearing 755-B) on pad shaft 560-A will fail prematurely. As such, the various yoke assemblies implemented within the lift pad lift mechanism 440-A may be configured to offset and / or offset the applied moment on the bearing of the pad shaft 560-A due to the lift of the lift pad to minimize wear Consists of.

12A is a perspective view of a short stroke lift pad lift mechanism 440A of a substrate processing system including a lift pad and pedestal configuration 1100 in accordance with one embodiment of the present disclosure. The lift pad and pedestal configuration 1100 including the short stroke pad lift mechanism 440-A may be configured to support a lift pad that is substantially similar in size (e.g., in diameter) to the wafer, For example, a diameter, such as a < / RTI >

In one embodiment, the lift pad lift mechanism 440A shown in FIG. 12A is configured to lift the lift pad for rotation about the pedestal 140-A via engagement with the upper hard stop 1210, and And to lift the lift pad for entry of the end-effector to the pedestal 140-A via the engagement with the lower hard stop 1211. In other embodiments, the lift pad and pedestal configuration 1100 may be modified to provide one of the lift pad lift operations provided by the short stroke lift pad lift mechanism 440A. For example, the lift pad lift mechanism 440A may be modified to include only the upper hard stop 1210 to raise the lift pad for rotation against the pedestal 140-A. In this case, the lift pin assembly may be configured within the lift pad and pedestal configuration 1100 to enable entry of the end-effector.

As shown in Figure 12a, the lift pad and pedestal configuration 1100 is located within the mainframe 1105 and the mainframe 1105 is positioned into the processing chamber (e.g., as is fixed within the processing chamber) . The upper hard stop portion 1210 and the lower hard stop portion 1211 are fixed with respect to the main frame 1105. For example, the upper hard stop 1210 may be affixed directly to the main frame 1105, or may be joined through one or more components therebetween. In particular, the mainframe extension 1106 is attached to the mainframe 1105, and both the upper hard stop 1210 and the lower hard stop 1211 are attached to the mainframe extension 1106. In this way, the upper hard stop portion 1210 and the lower hard stop portion 1211 do not move with respect to the main frame 1105.

The lift pad and pedestal configuration 1100 includes a pedestal bracket 1101 that is movably interconnected to the mainframe 1105 through a slide / carriage and ball screw / Z-motor (445-A) do. For example, pedestal bracket 1101 is attached to central shaft 510-A of pedestal 140-A (e.g., via bellows 420-A), and ball screw / Z-motor 445 -A) is converted into motion within the pedestal 140-A. In addition, the slide 1235 is fixed relative to the pedestal bracket 1101. In this way, the slide 1235 moves with the pedestal bracket 1101 in the same straight line Z-direction.

The pedestal bracket extensions 1231/1232 are fixed relative to the pedestal bracket 1101. For example, the pedestal bracket extensions 1231/1232 may be attached directly to the pedestal bracket 1101. [ Further, the bracket roller 1221 is attached to the pedestal bracket extension 1231. In addition, the bracket roller 1222 is attached to the pedestal bracket extension 1232. In this manner, the bracket rollers 1221/1222 move with the pedestal bracket 1101 in the same straight line Z-direction.

The lift pad and pedestal configuration 1100 includes a lift pad bracket 1230 movably attached to the slide 1235. Since the slide 1235 is fixed with respect to the pedestal bracket 1101, any movement in the pedestal bracket 1101 is converted to the same movement of the slide 1235 in the linear Z-direction. In addition, since the lift pad bracket 1230 is movably attached to the slide 1235, the lift pad bracket 1230 can be used to lift the pedestal 140-A (for example, to induce removal of the lift pad from the pedestal 140- And may have additional motion on the bracket 1101. The interface between the pedestal bracket 1101, the slide 1235, and the lift pad bracket 1230 is described more fully in FIG.

The lift pad and pedestal configuration 1100 includes a yoke 1240 that is rotatably attached to the lift pad bracket 1230. The yoke 1240 may be engaged with the upper hard stop 1210 or the lower hard stop 1211 to prevent the short stroke lift pad lift mechanism 440-A from engaging (e.g., And interfacing with the ferro-seal assembly 425-A via the rollers 1255/1256. The ferrous seal assembly 425-A first introduced in Figures 4-6 includes connector arms 1251/1252 located on opposite sides of the ferro-seal assembly 425-A. The roller 1255 is attached to one end of the connector arm 1251 and the roller 1256 is attached to the connector arm 1252 so that the rollers 1255/1256 are positioned on opposite sides of the ferrosil assembly 425- As shown in FIG. The yoke 1240 is configured to offset and / or offset the moment applied to the pad shaft 560-A when the pad lift mechanism 440-A is actuated to disengage the lift pad from the pedestal 140-A . The interface between the yoke and the ferro-seal assembly 425-A is more fully described in Fig.

The lift pad and pedestal configuration 1100 includes a lever 1225 that is rotatably attached to the lift pad bracket 1230 via a pin 1226. The lift pad 1230 includes a lever 1225, As such, any movement of the pin 1226 is converted to a similar movement of the pedestal bracket 1101 and the ferro-seal assembly 425-A to the pedestal 140-A. For example, movement of pin 1226 is guided through engagement between one of upper hard stop 1210 or lower hard stop 1211 and lever 1225. Correspondingly, any movement of the pin 1226 is converted to a similar movement of the pad shaft 560-A to the pedestal 140-A and the attached lift pad. The interface between the pin 1226, the lever 1225, the lift pad bracket 1230, the ferro-seal chamber assembly 425-A, and the pad shaft 560-A is more fully described in Figures 13 and 14A- Will be.

FIG. 12B is a diagram illustrating a motion sequence of the short stroke pad lift mechanism 440-A of the lift pad and pedestal configuration 1100 of FIGS. 11A-11B and 12A, according to one embodiment of the present disclosure. According to one embodiment, the short stroke pad elevation mechanism 440-A may be configured such that the diameter of the lift pad is less than the diameter of the wafer so that the lift pad may be lifted to allow rotation of the lift pad relative to the pedestal 140- May be implemented in a small lift pad and pedestal configuration 1100 and may also provide lifting of the lift pads to allow entry of the end-effector for wafer transfer purposes. In yet another embodiment, the short stroke pad lift mechanism 440-A may be configured such that the diameter of the lift pad is greater than the diameter of the wafer, such that the lift pad may be lifted to allow rotation of the lift pad relative to the pedestal 140- And may be implemented within a lift pad and pedestal configuration 1100, which is approximately the same size. In this case, wafer transfer may be accomplished through the lift pin assembly.

The lift pad and pedestal configuration 1100 is shown in a state 1203 in which the short stroke lift pad lift mechanism 440-A is located in the neutral position. The lift pad is configured to provide simultaneous movement of the lift pad and the pedestal 140-A when the short stroke lift pad lift mechanism 440-A is not supported within the neutral position, (E.g., about 15 pounds when the chamber is at atmospheric pressure and about 1 pound during processing) so that no separation between the pedestal 140-A and the pedestal 140-A occurs . For example, the pedestal reference force may be determined in part (e.g., via the spring constants) such that the lift pad constantly references the pedestal when the pad lift mechanism 440-A is in the neutral position (E.g., force) springs, and the ferro-seal assembly 425-A, and the pad shaft 560-A. Since the seta motor 427-A is offset from the pad shaft 560-A, the springs 1411 move all the moments induced by the seta motor 427-A operating on the pad shaft 560-a Offset and / or compensation.

More specifically, when the pad lifting mechanism 440-A is in the neutral position, the levers 1225 rotatably attached to the pins 1226 are all secured to the upper hard stop 1210 ) Or the lower hard stop (1211). That is, the lever 1225 is loosely constrained between the bracket rollers 1221 and 1222 fixed to the pedestal bracket 1101 and moves with the slide / carrier movably attached to the ball screw. As such, when the short stroke pad lift mechanism 440-A is in the neutral position, the pin 1226 moves with the pedestal bracket 1101 and moves through the Z-motor 445-A and ball screw actuation Any movement within the pedestal bracket 1101 is converted to simultaneous movement of the lift pad and the pedestal 140-A. For example, as the pedestal 140-A moves with the pedestal bracket 1101 attached to the slide / carrier in response to the ball screw, the lift pad is supported on the pedestal 140-A because the lift pad is supported on the pedestal. ≪ / RTI >

On the other hand, when the lift pad lifting mechanism 440-A is lifted, additional movement to the pedestal 140-A is made by the lift pad to induce separation between the lift pad and the pedestal 140-A. In particular, the states 1204 and 1205 of the lift pad and pedestal configuration 1100 include an upper hard stop (e. G., A roller) that separates the lift pad from the pedestal 140-A to permit rotation of the lift pad RTI ID = 0.0 > 1210 < / RTI > The states 1201 and 1202 of the lift pad and pedestal configuration 1100 may be used to separate lift pads from the pedestal 140-A to permit entry of the end-effector arms for wafer transfer purposes And the lower hard stop portion 1211).

In state 1204 of the lift pad and pedestal configuration 1100, the short stroke lift pad lift mechanism 440-A begins to engage with the upper hard stop 1210. Specifically, the pedestal bracket 1101 approaches topmost when moving upward in the Z-direction. As shown, the lift pad and pedestal configuration 1100 is close to the uppermost position when moving upward in the Z-direction relative to the main frame 1105. The pedestal 140-A and the pedestal bracket 1101 move upwards to move the upper hard stop 1210 and the lower hard stop 1210 to each other, It starts to engage. As such, the pad lift mechanism 440-A is about to leave the neutral state or is beginning to escape.

In state 1205, the lift pad and pedestal configuration 1100 is coupled to the pedestal 140-A and the lift 1204 by upward movement of the pedestal to accommodate rotation of the lift pad through actuation of the short stroke pad lift mechanism 440- To raise the lift pad (e.g., about 1 mm) to cause separation between the pads. In particular, the short stroke lift pad lifting mechanism 440-A is fully engaged with the upper hard stop 1210. That is, the pedestal 140-A and the pedestal bracket 1101 continue to move upward until the pedestal bracket 1101 reaches the uppermost position. In this case, the lever 1225 is fully engaged with the upper hard stop 1210, and the lever 1224 completely rotates about the pin 1226. That is, a downward force is applied to the lever 1225 by the upper hard stop 1210 and the bracket roller 1222 is rotated to induce rotation (e.g., clockwise) of the lever 1225 relative to the pin 1226. [ An upward force is applied to the lever 1225. [ Since the lever is rotatably fixed to the pin 1226 and the pin is movably attached to the slide 1235 (which is fixed relative to the pedestal bracket 1101), rotation of the lever 1225 causes the pedestal 140- And a linear movement (Z-direction) in the pin 1226 with respect to the pedestal bracket 1101. [ In addition, since the force generated from the lever interaction between the upper hard stop 1210 and the bracket roller 1222 is relatively close to the pin 1225, the linear motion of the pin 1226 is small (e.g., , About 1 mm). 14A-14D, the linear motion of the pin 1226 is described more fully and the ferro-seal assembly 425-A and the yoke (not shown) are used to cause separation between the lift pad and the pedestal 140- 1240 to the linear motion of the pad shaft 560-A.

In state 1201 of the lift pad and pedestal configuration 1100, the short stroke lift pad lift mechanism 440-A begins to engage the lower hard stop 1211. Specifically, when the pedestal bracket 1101 moves downward in the Z-direction, the pedestal bracket 1101 approaches the bottommost. As shown, the lift pad and pedestal configuration 1100 moves downward in the Z-direction relative to the main frame 1105 and is close to the bottommost position. The pedestal 140-A and the pedestal bracket 1101 are moved downward and the lower hard stop 1211 and the lower hard stop 1211 are moved downward (e.g., when the pedestal 140-A is near the lowermost position) It starts to engage. As such, the pad elevation mechanism 440-A is about to leave the neutral position or is starting to escape.

In state 1202, the lift pad and pedestal configuration 1100 is coupled to a lift pad (not shown) via downward movement of the pedestal to facilitate entry of the end-effector for wafer transfer through actuation of the short stroke pad lift mechanism 440- (E.g., about 14 to 18 mm) to cause separation between pedestal 140-A and pedestal 140-A. In particular, the short stroke lift pad lifting mechanism 440-A is fully engaged with the bottom hard stop 1211. That is, the pedestal 140-A and the pedestal bracket 1101 continue to move downward until the pedestal bracket 1101 reaches the lowermost position. In this case, the lever 1225 is fully engaged with the lower hard stop 1211, and the lever 1225 completely rotates about the pin 1226. [ That is, upward force is applied to the lever 1225 by the lower hard stop 1211 and the bracket roller 1221 is rotated to induce rotation (e.g., clockwise) of the lever 1225 relative to the pin 1226. [ A downward force is applied to the lever 1225 by the lever 1225. Since the lever is rotatably fixed to the pin 1226 and the pin is movably attached to the slide 1235 (which is fixed relative to the pedestal bracket 1101), rotation of the lever 1225 causes the pedestal 140- And a linear movement (Z-direction) in the pin 1226 with respect to the pedestal bracket 1101. [ The linear motion of the pin 1226 is less than the linear motion of the pin 1226 (e.g., about 14 degrees), since the generated force is relatively far from the pin 1226 (from the lever interaction with the bracket roller 1221 and the lower hard stop 1211) To 18 mm). 14A-14D, the linear movement within the pin 1226 is described more fully and the ferro-seal assembly 425-A and the yoke (not shown) are used to cause separation between the lift pad and the pedestal 140- 1240 to the linear motion of the pad shaft 560-A.

13 is a perspective view of the short stroke lift pad lift mechanism 440-A of FIG. 12A, and more particularly to a yoke (not shown) that provides movement of the lift pad relative to the pedestal 140- 1240 and the slide 1235. [0080] FIG. In particular, the slide 1235 is fixed relative to the pedestal bracket 1101. For example, the slide 1235 may be attached directly to the pedestal bracket 1101 and may include pedestal bracket extension 1233, which may be attached directly to the pedestal bracket 1101, for example, through one or more intermediate components Lt; / RTI > All of the linear motion within the pedestal bracket 1101 (e.g., in the Z-direction) is converted to a similar motion of the slide 1235 (e.g., in the Z-direction).

In addition, the lift pad bracket 1230 is movably attached to the slide 1235. When the short stroke lift pad elevation mechanism 440-A is in the neutral position, the lift pad bracket 1230 is slidably engaged with the slide 1235 and the pedestal bracket 1102 to prevent relative movement between the lift pad bracket 1230 and the pedestal bracket 1101 Move together. All of the linear motion within the pedestal bracket 1101 (e.g., in the Z-direction) is converted to a similar movement of the lift pad bracket 1230 (e.g., in the Z-direction). On the other hand, when the pad lifting mechanism 440-A is brought into engagement with either the upper hard stop 1210 or the lower hard stop 1211, the lift pad bracket is moved to the pedestal bracket 1101). 13 also illustrates a yoke 1240 that is rotatably attached to a lift pad bracket 1230 through a pin 1226. In this embodiment,

14A is a perspective view of the lift pad elevation mechanism 440-A of FIG. 12A, and more particularly to a perspective view of a ferro-seal assembly 425-A providing movement of a lift pad relative to a pedestal, in accordance with one embodiment of the present disclosure. And the yoke 1240. In this embodiment, In particular, the yoke 1240 is rotatably attached to the lift pad bracket 1240 via a pin 1226. The yoke 1240 is configured to interface with the ferro-seal assembly 425-A. As such, all of the motion of the pin 1226 is switched to the lift pad bracket 1240, to the yoke 1240, and to the ferro-seal assembly 425-A. In particular, all linear motion of the yoke 1240 is also converted to similar linear motion of the lift pad and pad shaft 560-A through the ferro-seal assembly 425-A.

14B is a perspective view of a yoke 1240 interfacing with a ferro-seal assembly 425-A in accordance with one embodiment of the present disclosure. The yoke 1240 is rotatably attached to the lift pad bracket 1230 via a pin 1247. As shown, the yoke base is rotatably attached to the lift pad bracket 1230. The yoke arm 1246 extends from the yoke base 1245. In addition, both the yoke fork extension 1241 and the yoke fork extension 1242 extend from the yoke arm 1246. More specifically, FIG. 14B illustrates the connector arms (not shown) of the ferro-seal assembly of the lift pad lift mechanism 440-A of FIG. 13A providing movement of the lift pad relative to the pedestal 140- 1251/1252 and the yoke fork extensions 1241/1242. In particular, the upward motion of the yoke 1240 causes the rollers 1255/1256 to engage the yoke fork extensions 1241/1242. That is, the yoke fork extension portion 1241 is engaged with the roller 1255 attached to the ferro-seal connector arm 1251, and the yoke fork extension portion 1242 is connected to the roller 1256 ). When the pad lift mechanism 440-A is lifted (e.g., through the engagement of the yoke fork extensions 1241/1242 with the rollers 1255/1256), the ferro-seal assembly 425- A), the yoke 1240 is fixed with respect to the pad shaft 560-A and the pin 1226 is fixed with respect to the yoke 1240 (for example, When the pin 1226 undergoes linear motion in the Z-direction relative to the pedestal bracket 1101 and the pedestal 140-A, such as when engaging one of the lower hard stop 1221 or the portion 1210, , Which is converted to linear motion of the pad shaft 560-A in the Z-direction to create a separation between the lift pad and the pedestal 140-A.

The buckling yoke 1240 is also configured to offset and / or offset the upper and lower bearings of the pad shaft 560-A due to actuation of the lift pad lift mechanism 440-A . In particular, yoke 1240 pivots about pin 1247 so that the upper bearings of pad shaft 560-A and the lower bearings are insignificant moment or moment free, And is configured to balance forces along axis 471-A. That is, in a manner that offsets and / or cancels the moments applied to the upper bearings and lower bearings of the pad shaft 560-A, the ferro-seal assembly 425-A through each of the connector arms 1251/1252 Contact is made by the yoke 1240 through the forked extensions 1241/1242 with the same force on the rollers 1255/1256,

Figure 14C is a perspective view of a clamping mechanism that provides linkage between the components of the ferro-seal assembly 425-A and the pad shaft 560-A extending from the lift pad, according to one embodiment of the present disclosure . As such, all linear motion (e.g., in the Z-direction) of the ferro-seal assembly 425-A is converted to linear motion (e.g., Z-direction) similar to that of the lift pad. In particular, the lowermost end of the clamp 1430 and disc 1440 ferrule seal assembly 425-A extending from the disc 1420. Clamp 1430 is clamped to pad shaft 560-A such that the rotation of any disk 1440 is switched to the rotation of pad shaft 560-A. For example, rotation of the disc 1440 is achieved through motion of the belt pulley 1420 as provided through the setter motor 427-A. 14D is a perspective view of the clamp 1430 of FIGURE 14C according to one embodiment of the present disclosure and the clamping mechanism provided through the clamp 1430 forces the clamp 1430 and disk 1440 to the pad shaft 560- Rigidly attached.

15A is a perspective view of a substrate processing system including a lift pad and pedestal configuration 1500 in accordance with one embodiment of the present disclosure, and a lift pin assembly (not shown) provides wafer transfer. 15A is a cross-sectional view of an elevation of a lift pad relative to a pedestal through upward motion of the pedestal to accommodate rotation of the lift pad, which is a lift pad that may be smaller than the wafer or may have a size substantially similar to the wafer, Stroke < / RTI > lift mechanism 440-B that provides a short-stroke lift mechanism 440-B.

According to one embodiment of the present disclosure, the short stroke pad lift mechanism 440-B is configured to separate the lift pad (not shown) from the pedestal 140-A. The lift pad and pedestal configuration 1500 is located within the mainframe 1105 and the mainframe 1105 is disposed within the processing chamber (e.g., secured within the processing chamber). The movement of the pedestal 140-A is provided for the mainframe and the movement of the lift pad is controlled by the main frame 1105 (e.g., the lift pad moves with the pedestal bracket 1101) (Separated from the pedestal 140-A). The removal of the lift pad from the pedestal 1140-A may be enabled for the purpose of rotating the lift pad (and the wafer disposed thereon) against the pedestal 140-A.

Pedestal 140-A of the lift pad and pedestal configuration 1500 is configured such that the movement of the pedestal 140-A is controlled by the pedestal and lift pad actuator 515 'of Figures 7b and 7c and / And may be controlled by the pedestal control unit 450 of FIGS. 4 and 6 so as to be realized through the actuator 515. FIG. The lift pad of the lift pad and pedestal configuration 1500 may be such that the movement of the lift pad is achieved through the pedestal and lift pad actuator 515 'of FIGS. 7b and 7c and / or the pedestal and lift pad actuator 515 of FIG. , And the lift pad control unit 455 of Figs. 4 and 6.

FIG. 15B is a perspective view of the substrate processing system of FIG. 15A including a lift pad and pedestal configuration 1500 in accordance with one embodiment of the present disclosure, illustrating the components of the short stroke pad lift mechanism 440-B. In particular, the pad lifting mechanism 440-B includes a pedestal support roller 1521 fixed relative to the pedestal bracket 1101. In addition, the lever 1525 is rotatably attached to the ferro-seal assembly 425-A via the fins 1526, such as through the connector arms 1251/1252. The pad lift mechanism 440-B includes two levers (not shown) that work together to elevate the ferro-seal assembly 425-A relative to the pedestal bracket 1101 on opposing sides of the ferro-seal assembly 425- 1525).

15C is a perspective view of the lift pad lift mechanism 440-A of FIG. 15A, and more particularly to a perspective view of the lift pad lift mechanism 440-A, in accordance with one embodiment of the present disclosure. RTI ID = 0.0 > 425-A < / RTI > In particular, the pad lifting mechanism 440-B includes hard stops 1510 attached to the main frame 1105. The pedestal bracket 1101 moves upward with respect to the main frame 1105 and the lever 1525 also moves with the pedestal bracket 1101 until it engages the hard stop 1510. [ When the lever 1525 engages the hard stop 1510, the lever 1525 rotates about the pin 1526 and rotates about the pedestal bracket 1101 (e.g., in the Z-direction) Thereby inducing a linear motion at the pin 1526. For example, the lever 1525 experiences forces due to the hard stop 1510 and the pedestal support roller 1521. Since the pin 1526 is fixed with respect to the ferro-seal assembly 425-A, the linear motion at the pin 1526 is performed at the ferro-seal assembly 425-A, and corresponding to the pad shaft 560- Switch to similar linear motion. In this way, when the pad lifting mechanism 440-B engages with the hard stop 1510, the lifting pad 140-A is lifted from the pedestal 140-A for the purpose of rotating the lift pad relative to the pedestal 140- .

15D is a perspective view of the lift pad lift mechanism 440-B of FIG. 15A according to one embodiment of the present disclosure, and more particularly to a pedestal bracket 1101 and a yoke (not shown) that provide movement of the lift pad relative to the pedestal. 1540. < / RTI > As shown, the yoke 1540 is rotatably attached to the pedestal bracket 1011. The yoke 1540 provides balancing forces on the ferro seal connector arms 1251/1252. That is, the yoke 1540 balances the force through its rotation to apply the same forces on both sides of the ferro-seal assembly 425-A. That is, there is no or minimal moment on the pad shaft 560-A (e.g., an effective radial force on the shaft bearings) through any actuation of the pad lift mechanism 440-B.

FIG. 16A is a diagram illustrating movement of the lift pad lift mechanism 440-B of FIG. 15A at a point in time immediately prior to detaching the lift pad from the pedestal, in accordance with one embodiment of the present disclosure. As shown, the short stroke lift pad lift mechanism 440-B of the lift pad and pedestal configuration 1500 begins to engage with the hard stop 1510. Specifically, the pedestal bracket 1101 approaches the uppermost position when moving upward in the Z-direction. As shown, the lift pad and pedestal configuration 1500 is near the topmost position when moving upwardly in the Z-direction relative to the main frame 1105. As shown in FIG. The pedestal 140-A and the pedestal bracket 1101 move upwards and the hard stop 1510 and the pedestal 1512 are moved upwardly (e.g., when the pedestal 140-A is near the highest position) It starts to engage. As such, the pad elevation mechanism 440-A is about to leave the neutral position or is starting to escape. At this point, the lift pad 630-A is supported on the pedestal 140-A. For example, the pedestal-reference MCAs 595-A still contact the lift pad 630-A.

Figure 16b illustrates the movement of the lift pad lift mechanism 440-B of Figure 15a at a point after separating the lift pad 630-A from the pedestal 140-A, according to one embodiment of the present disclosure FIG. The lift pad and pedestal configuration 1500 includes a pedestal 140-A and a lift pad 640 via an upward motion of the pedestal to accommodate the rotation of the lift pad 630-A through the actuation of the short stroke pad lift mechanism 440- (E.g., about 1 mm) lift pad 630-A to cause separation between pad 630-A and pad 630-A. In particular, the short stroke lift pad lifting mechanism 440-B is fully engaged with the hard stop 1510. That is, the pedestal 140-A and the pedestal bracket 1101 continue to move upward until the pedestal bracket 1101 is at its highest position. In this case, the lever 1525 is fully engaged with the hard stop 1510, and the lever 1525 completely rotates about the pin 1526. That is, a downward force is applied to the lever 1525 by the hard stop 1510 and the pedestal support roller 1521 is rotated to guide the rotation of the lever 1525 (for example, clockwise) An upward force is applied to the lever 1525. [ Since the lever is rotatably secured to the pin 1526 and the pin 1526 is movably attached to the slide 1531 (which is fixed relative to the pedestal bracket 1101), rotation of the lever 1525 causes the pedestal 140 -A) and the pedestal bracket 1101 (Z-direction) within the pin 1526. [ In addition, the linear motion at the pin 1526 is converted to linear motion of the pad shaft 560-A through the ferro-seal assembly 425-A to cause separation between the pedestal 140-A and the lift pad.

17A is a diagram illustrating a high temperature bearing assembly 755-A of the lift pad and pedestal configuration 1100 of FIGS. 11-16 according to one embodiment of the present disclosure. The high temperature bearing assembly 755-A is first introduced in Figure 7d. Although FIG. 17A describes a small lift pad 630-A having a diameter smaller than the wafer diameter, the hot bearing assembly 755-A can be implemented with a lift pad having a diameter substantially similar to the wafer diameter. In embodiments, the high temperature bearing assembly 755-A is configured to operate in a high temperature environment, such as a chamber at least 300 degrees Celsius.

The high temperature bearing assembly 755-A of FIG. 17a is identical in construction to the high temperature bearing assembly 755-B of FIG. 7d and the high temperature bearing assembly 755-B of FIGS. 16a-16b, except for the length of the inner sapphire bushing 1724. [ -B). In particular, the length of the inner sapphire bushing 1724 in Fig. 17A is intended to allow access by the end-effector for wafer transfer (e.g., removal and placement of wafers from the lift pads) A) for the purpose of rotating the lift pad (and the wafer on the lift pad) relative to the pedestal 140-A. The movement of the lift pad to the pedestal 140-A for rotation is about 1 mm, and the movement of the lift pad for end-effector access is 14 mm to 18 mm. As such, the length L of the high temperature bearing assembly 755-A is configured to accommodate the longer travel of the lift pads for end-effector access. On the other hand, for the purpose of rotating the lift pad (and the wafer on the lift pad) about the pedestal 140-A, the hot bearing assembly 755-B of FIGS. 16A and 16B is moved from the pedestal 140- Lt; RTI ID = 0.0 > lift pad < / RTI > For example, the lift pin assembly provides end-effector access. As such, the length of the high temperature bearing assembly 755-B does not need to accommodate the longer movement of the lift pads for end-effector access and is much shorter than the length of the high temperature bearing assembly 755-A. The description of the high temperature bearing assembly 755-A is applicable to each of the high temperature bearing assemblies introduced throughout this application.

The configuration of the lift pad elevation mechanism 440-A described above may also be configured such that the lift pad elevation mechanism 440-A described above is capable of generating a lift lift (e.g., a radial force) on a high temperature bearing assembly 755- It induces no or slight motions. Particularly when the lift pad lift mechanism 440-A lifts the pad shaft 560-A to separate the lift pad 630-A from the pedestal 140-A, the high temperature bearing assembly 755- There is no or little mouthed in.

17A, the high temperature bearing assembly 755-A includes an outer stack on the inner wall of the central axis 510-A of the pedestal 140-A and an outer stack on the inner diameter of the outer diameter of the pad shaft 560- Stack.

In particular, the inner stack includes a retaining / snap ring 1720, a load distribution washer 1721, a spring wave washer 1722, a load centering and dispensing washer 1723, and an inner sapphire bushing 1724. Inner sapphire bushing 1724 has an upper edge surface 1791 and a lower edge surface 1792 both of which have conical, angled, or tapered surfaces. Figure 17D illustrates an inner sapphire bushing 1724 having an annular shape of a high temperature bearing assembly 755-A, according to one embodiment. Thus, the inner sapphire bushing 1724 has a conical cross-section. The load centering and dispensing washer 1723 also has a wedge-shaped, conical, angled, or tapered surface. The conical surfaces of both the load centering and dispensing washer 1723 and the inner sapphire bushing 1724 contribute to the centering of the pad shaft 560-A in the center shaft 510-A.

The outer stack also includes a retaining / snap ring 1710, a load distribution washer 1711, a spring wave washer 1712, a load centering and dispensing washer 1713, and an outer sapphire bushing 1714. The outer sapphire bushing 1714 has an upper edge surface 1781 and a lower edge surface 1782 both of which have conical, angled, or tapered surfaces. Figure 17C illustrates an outer sapphire bushing 1714 having an annular shape of a high temperature bearing assembly 755-A, according to one embodiment of the present disclosure. Thus, the outer sapphire bushing 1714 has a conical cross-section. In addition, the load centering and dispensing washer 1713 has a wedge-shaped, conical, angled, or tapered surface. The conical surfaces of both the load centering and dispensing washer 1723 and the inner sapphire bushing 1724 contribute to the centering of the pad shaft 560-A in the central axis 510-A. The outer sapphire bushing 1714 is configured to contact (e.g., as if rubbed) with the inner sapphire bushing 1724 when the lift pad 630-A is removed from the pedestal 140-A.

The lift pad and pedestal configuration shown in Figure 17A includes centering chamfers 1751/1752 configured to support the high temperature bearing assembly. For example, the centering chamfer 1751 is located on the inner wall of the center shaft 510-A and is positioned to hold and place the outer stack of the high temperature bearing assembly 755-A in the center shaft 510- ) Retention capabilities. The centering chamfer 1752 is also located on the outer diameter of the pad shaft 560-A and is positioned to hold and place the inner stack of the hot bearing assembly 755-A within the pad shaft 560- Retention capabilities may also be provided.

The high temperature bearing assembly 755-A is capable of changing (e.g., rotating, lifting, moving, etc.) the pad shaft 560-A within the center shaft 510- Without centering. In addition, the high temperature bearing assembly 755-A is configured to provide constant centering when exposed to varying temperatures. That is, high temperature bearing assembly 755-A can accommodate different thermal expansion rates between pedestal 140-A and pad shaft 560-A, and other components. For example, the sapphire compositions of the inner sapphire bushing 1724 and the outer sapphire bushing 1714 in the high-temperature bearing assembly 755-A can be adjusted by the pad shaft 560 within the central shaft 510-A of the pedestal 140- A) and the pad shaft 560-A to provide consistent centering of the pedestal 140-A. More specifically, the metal components of the inner and outer stacks provide a pre-load force due to thermal expansion, and the corresponding conical components (e.g., washers and bushings) .

Figure 17B is a perspective view of the high temperature bearing assembly 75-A of Figure 17A, in accordance with one embodiment of the present disclosure. In particular, the inner stack of the hot bearing assembly 755-A located on the outer diameter of the pad shaft 560-A is shown. The inner stack includes a retaining / snap ring 1720, a load distribution washer 1721, a spring wave washer 1722, a load centering and dispensing washer 1723, and an inner sapphire bushing 1724. In addition, the chamfer 1752 is shown positioned above the inner sapphire bushing 1724.

In one embodiment, the wave washer 1722 in the inner stack has three contact points to facilitate the load distribution washer 1721 to equally distribute forces across the snap ring 1720. The wave washer 1712 in the outer stack also has three contact points to facilitate the load distribution washer 1711 to equally distribute forces across the snap ring 1710. [

18 shows a control module 1800 for controlling the above-described systems. In one embodiment, the control module 110 of FIG. 1 may include some of the exemplary components of the control module 1800. For example, control module 1800 may include a processor, a memory, and one or more interfaces. The control module 1800 may be employed to control the devices of the system based in part on the sensed values. For example, control module 1800 can be configured to control one or more of valves 1802, filter heaters 1804, pumps 1806, and other devices 1808 based on sensed values and other control parameters Or more. The control module 1800 receives only the sensed values from, for example, pressure manometrics 1810, flow meters 1812, temperature sensors 1814, and / or other sensors 1816. The control module 1800 may also be employed to control process conditions during precursor delivery and deposition of the film. Control module 1800 will typically include one or more memory devices and one or more processors.

The control module 1800 may control the activities of the precursor delivery system and the deposition apparatus. The control module 1800 controls the process timing, the delivery system temperature, and the pressure differential across the filters, valve positions, mixture of gases, chamber pressure, chamber temperature, substrate temperature, RF power levels, substrate chuck or pedestal position, And computer programs that include sets of instructions that control other parameters of a particular process. The control module 1800 may also monitor the pressure differential and automatically switch vapor precursor delivery from one or more paths to one or more other paths. Other computer programs stored on the memory devices associated with the control module 1800 may be employed in some embodiments

There will typically be a user interface associated with the control module 1800. The user interface may include a display 1818 (e.g., display screen and / or graphical software displays of device and / or process conditions) and user input devices such as pointing devices, keyboards, touchscreens, microphones, 1820 < / RTI >

Computer programs for controlling precursor delivery, deposition, and other processes of a process sequence may be written in any conventional computer readable programming language, e.g., assembly language, C, C ++, Pascal, Fortran, The compiled object code or script is executed by the processor to perform tasks identified in the program.

The control module parameters may include, for example, process conditions such as filter pressure differences, process gas composition and flow rates, plasma conditions such as temperature, pressure, RF power levels and low frequency RF frequency, cooling gas pressure, and chamber wall temperature Lt; / RTI >

The system software may be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be created to control the operation of the chamber components required to perform the deposition processes of the present invention. Examples of programs or sections of programs for this purpose include a substrate positioning code, a process gas control code, a pressure control code, a heater control code, and a plasma control code.

The substrate positioning program may include program code for controlling the chamber components used to load the substrate onto a pedestal or chuck and to control the spacing between the substrate and other components of the chamber such as the gas inlet and / have. The process gas control program may include a code for controlling the gas composition and the flow rates and a code for channeling the gas into the chamber prior to deposition to selectably stabilize the pressure in the chamber. The filter monitoring program includes code for comparing the measured difference (s) with predetermined value (s) and / or code for switching paths. The pressure control program may, for example, comprise a code for controlling the pressure in the chamber by adjusting the throttle valve of the exhaust system of the chamber. The heater control program may include code for controlling the current to the heating units to heat the components of the precursor delivery system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the transfer of heat transfer gas, such as helium, to the substrate chuck.

Examples of sensors that may be monitored during deposition include, but are not limited to, mass flow control modules, pressure sensors such as pressure manometers 1810 and thermocouples located within a delivery system, pedestal, or chuck , Temperature sensors 1814/220). Properly programmed feedback and control algorithms may use data from these sensors to maintain the desired process conditions. The foregoing describes implementations of embodiments of the present disclosure in a single-chamber semiconductor processing tool or a multi-chamber semiconductor processing tool.

In some implementations, the controller is part of a system that may be part of the above examples. Such systems may include semiconductor processing equipment, including processing tools or tools, chambers or chambers, processing platforms or platforms, and / or specific processing components (substrate pedestals, gas flow systems, etc.) . These systems may be integrated into an electronic device for controlling their operation before, during, and after the processing of a semiconductor wafer or substrate. Electronic devices may also be referred to as " controllers " that may control various components or sub-components of the system or systems. The controller may control the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, etc., depending on the processing requirements and / , RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, location and operation settings, tools and other transport tools, and / or May be programmed to control any of the processes disclosed in this disclosure, including substrate transfers into and out of loadlocks that are interfaced or interfaced with a particular system.

Generally speaking, the controller may include various integrated circuits, logic, memory, and / or code that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, and / May be defined as an electronic device having software. The integrated circuits may be implemented as chips that are in the form of firmware that stores program instructions, digital signal processors (DSPs), chips that are defined as application specific integrated circuits (ASICs), and / or one that executes program instructions (e.g., Microprocessors, or microcontrollers. The program instructions may be instructions that are passed to the controller or to the system in the form of various individual settings (or program files) that define operating parameters for executing a particular process on a semiconductor wafer or semiconductor substrate. In some embodiments, the operating parameters may be varied to achieve one or more processing steps during fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / It may be part of the recipe specified by the engineer.

The controller, in some implementations, may be coupled to or be part of a computer that may be integrated into the system, coupled to the system, or otherwise networked to the system, or a combination thereof. For example, the controller may be in a " cloud " of all or a portion of a factory host computer system that may enable remote access to substrate processing. The computer monitors the current progress of manufacturing operations, examines the history of past manufacturing operations, examines trends or performance metrics from a plurality of manufacturing operations, changes parameters of current processing, and performs processing steps following current processing Or may enable remote access to the system to start a new process. In some instances, a remote computer (e.g., a server) may provide process recipes to the system via a network that may include a local network or the Internet.

The remote computer may include a user interface for enabling input or programming of parameters and / or settings to be subsequently communicated from the remote computer to the system. In some instances, the controller receives instructions in the form of data, specifying parameters for each of the process steps to be performed during one or more operations. It should be appreciated that these parameters may be specific to the type of tool that is configured to control or interface with the controller and the type of process to be performed. Thus, as described above, the controllers may be distributed, for example, by including one or more individual controllers networked together and cooperating together for common purposes, e.g., for the processes and controls described in this disclosure. An example of a distributed controller for this purpose is one or more integrated on a chamber communicating with one or more integrated circuits located remotely (e. G., At the platform level or as part of a remote computer) Circuits.

Exemplary systems include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, A chamber or module, a chemical vapor deposition (CVD) chamber or module, an ALD (atomic layer deposition) chamber or module, an ALE (atomic layer etch) chamber or module, an ion implantation chamber or module, a track chamber or module, Or any other semiconductor processing systems that may be used or associated with fabrication and / or fabrication of wafers.

As described above, depending on the process steps or steps to be performed by the tool, the controller can be used to transfer the material to move the containers of wafers from / to the tool positions and / or load ports in the semiconductor fabrication plant. May communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located all over the plant, main computer, another controller or tools .

The foregoing description of the embodiments has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the present disclosure. The individual elements or features of a particular embodiment are not generally limited to a particular embodiment and, if applied, may be used in selected embodiments and are interchangeable, even if not specifically shown or described. The same bar may also vary in many ways. Such variations are not to be regarded as a departure from the present disclosure, and all such modifications are intended to be included within the scope of this disclosure.

While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. Accordingly, the embodiments are to be considered as illustrative and not restrictive, and the embodiments are not intended to be limited to the details provided in this disclosure, but may be modified within the scope and equivalence of the claims.

Claims (50)

An assembly for use in a process chamber for depositing a film on a wafer,
A pedestal assembly including a pedestal movably mounted in the mainframe;
A lift pad configured to move with the pedestal assembly and to be supported on the pedestal upper surface of the pedestal; And
A lift pad lift mechanism configured to separate the lift pad from the pedestal,
An upper hard stop fixed relative to the main frame;
A first roller attached to the pedestal assembly;
A slide movably attached to the pedestal assembly;
A lift pad bracket interconnected with and interconnected with the slide shaft, the slide shaft extending from the lift pad along a central axis; And
A lever rotatably attached to the lift pad bracket via a pin, the lever being supported on the first roller at a neutral position when not engaged with the upper hard stop,
Wherein said lever is configured to rotate about said pin as it engages said upper hard stop and said first roller and rotates about said pin from said pedestal upper surface by a process rotation displacement when said pedestal assembly moves upwards, Wherein the lift pad lift mechanism is configured to separate the lift pad. The method according to claim 1,
The pedestal assembly includes:
A pedestal bracket attached to the pedestal and movably attached to the main frame, the pedestal bracket configured to move the pedestal along the central axis with respect to the main frame; And
A central shaft extending from the pedestal along the central axis, the central shaft being configured to move with the pedestal,
Wherein the pad shaft is configured to separate the lift pad from the pedestal and is positioned within the center shaft. The method according to claim 1,
Wherein the lift pad bracket and the slide are configured to move upwardly relative to the pedestal assembly such that when the lever rotates about the pin, the lift pad is configured to move relative to the pedestal upper surface along the central axis Moving, assemblies. The method according to claim 1,
Wherein when the lever rotates about the pin, the lift pad and the pedestal assembly move in a 2: 1 ratio. The method according to claim 1,
Wherein there is no relative movement between the lever and the pedestal assembly when the lever is in the neutral position without engaging the upper hard stop. The method according to claim 1,
Wherein the lift pad further comprises a pad top surface extending from the central axis and a pad bottom surface configured to be supported on the pedestal top surface, the pad top surface being configured to support the wafer when the wafer is placed on top, . The method according to claim 6,
Wherein the diameter of the pad top surface is smaller than the wafer diameter. The method according to claim 6,
Wherein the diameter of the pad top surface is approximately sized by the wafer diameter. The method according to claim 1,
Wherein the lift pad is configured to rotate relative to the pedestal upper surface when separated from the pedestal between at least a first angular orientation and a second angular orientation. The method according to claim 1,
Wherein the lift pad lies within a recess in the pedestal top surface. The method according to claim 1,
The lift pad bracket is interconnected with a ferro-seal assembly interconnected with the pad shaft, and the ferro-seal assembly includes a vacuum seal around the pad shaft during or during the rotation of the pad shaft, Said assembly comprising: An assembly for use in a process chamber for depositing a film on a wafer,
A pedestal assembly including a pedestal movably mounted in the mainframe;
A lift pad configured to move with the pedestal assembly and to be supported on the pedestal upper surface of the pedestal; And
A lift pad lift mechanism configured to separate the lift pad from the pedestal,
An upper hard stop fixed to the main frame;
A lower hard stop fixed to the main frame and positioned below the upper hard stop with respect to the main frame;
A first roller attached to the pedestal assembly;
A second roller attached to the pedestal assembly;
A slide movably attached to the pedestal assembly; And
A lift pad bracket interconnected with and interconnected with the slide shaft, the slide shaft extending from the lift pad along a central axis;
A lever rotatably attached to the lift pad bracket via a pin, the lever being supported on the first roller at a neutral position when not engaged with the upper hard stop,
When the pedestal assembly moves upwards, the lever rotates about the pin as it engages the first roller and the upper hard stop, and rotates the lift pad from the pedestal top surface by a process rotation displacement Respectively,
When the pedestal assembly moves downward, the lever rotates about the pin as it engages the second roller and the lower hard stop, and rotates the lift pad from the pedestal by an end-effector access displacement Wherein the lift pad lift mechanism is configured to separate the lift pad from the lift pad. 13. The method of claim 12,
Wherein the second roller is laterally offset from the first roller relative to the pedestal assembly and is vertically offset from the first roller parallel to the central axis with respect to the pedestal assembly. 13. The method of claim 12,
The pedestal assembly includes:
A pedestal bracket attached to the pedestal and movably attached to the main frame, the pedestal bracket configured to move the pedestal along the central axis with respect to the main frame; And
A central shaft extending from the pedestal along the central axis, the central shaft being configured to move with the pedestal,
Wherein the pad shaft is configured to separate the lift pad from the pedestal and is positioned on the center shaft. 13. The method of claim 12,
The lift pad bracket and the slide are moved upwardly with respect to the pedestal assembly such that when the lever rotates about the pin, the lift pad is configured to move relative to the pedestal upper surface along the central axis, Assembly. An assembly for use in a process chamber for depositing a film on a wafer,
Means for movably mounting a pedestal assembly comprising a pedestal in a mainframe;
Means for moving a lift pad configured to be supported on the pedestal upper surface of the pedestal with the pedestal assembly; And
Means for separating the lift pad from the pedestal,
Means for securing an upper hard stop to the main frame;
Means for attaching the first roller to the pedestal assembly;
Means for movably attaching the slide to the pedestal assembly;
Means for interconnecting the lift pad bracket to the pad shaft and to the slide, the pad shaft extending from the lift pad along a central axis; And
Means for rotatably attaching the lever to the lift pad bracket via a pin, the lever being supported on the first roller in a neutral position unless it is engaged with the upper hard stop, Including,
Wherein said lever is configured to rotate about said pin as it engages said upper hard stop and said first roller and rotates about said pin from said pedestal upper surface by a process rotation displacement when said pedestal assembly moves upwards, Said lift pad being configured to separate said lift pad from said pedestal. 17. The method of claim 16,
The pedestal assembly includes:
Means for movably attaching the pedestal bracket to the main frame and means for attaching a pedestal bracket to the pedestal, wherein the pedestal bracket is configured to move the pedestal along the central axis with respect to the main frame; Said means; And
Means for extending a center shaft from the pedestal along the central axis, the central shaft being configured to move with the pedestal,
Wherein the pad shaft is configured to separate the lift pad from the pedestal and is positioned within the center shaft. 17. The method of claim 16,
The lift pad bracket and the slide are moved upwardly with respect to the pedestal assembly such that when the lever rotates about the pin, the lift pad is configured to move relative to the pedestal upper surface along the central axis, Assembly. 17. The method of claim 16,
Wherein when the lever rotates about the pin, the lift pad and the pedestal assembly move at a 2: 1 ratio. 17. The method of claim 16,
Wherein there is no relative movement between the lever and the pedestal assembly when the lever is in the neutral position without engaging the upper hard stop. 17. The method of claim 16,
The means for moving the lift pad further comprises means for extending the pad top surface from the central axis and means for supporting the pad bottom surface above the pedestal top surface, The assembly comprising: 22. The method of claim 21,
Wherein the diameter of the pad top surface is smaller than the wafer diameter. 22. The method of claim 21,
Wherein the diameter of the pad top surface is sized to approximate the wafer diameter. 17. The method of claim 16,
Wherein the means for moving the lift pad comprises rotating the lift pad relative to the pedestal upper surface when detached from the pedestal between at least a first angular orientation and a second angular orientation. 17. The method of claim 16,
The means for interconnecting the lift pad bracket to the pad shaft and to the slide includes means for interconnecting the lift pad bracket and a ferroseal assembly interconnected with the pad shaft, Wherein the pad shaft is configured to provide a vacuum seal around the pad shaft while it is not rotating or rotating. An assembly for use in a process chamber for depositing a film on a wafer,
A pedestal assembly including a pedestal movably mounted in the mainframe;
A lift pad configured to move with the pedestal assembly and to support against the pedestal upper surface of the pedestal; And
A lift pad lift mechanism configured to separate the lift pad from the pedestal,
A lever assembly configured to be actuated for the pedestal assembly when actuated;
A ferrous seal assembly configured to provide a vacuum seal around the pad shaft and surrounding the pad shaft, the ferru seal assembly being interconnected with the lever assembly; And
And a yoke assembly coupled to the lever assembly and configured to apply equal forces to opposing sides of the ferro seal assembly to offset a moment applied to the ferro seal assembly when the lever assembly is actuated, Wherein the assembly comprises a lift mechanism. 27. The method of claim 26,
The lever assembly includes:
An upper hard stop fixed to the main frame;
A first roller attached to the pedestal assembly;
A slide movably attached to the pedestal assembly;
A lift pad bracket interconnected with the pad shaft and interconnected with the slide, the pad shaft extending from the lift pad along a central axis; And
A lever rotatably attached to the lift pad bracket via a pin, the lever being supported on the first roller at a neutral position when not engaged with the upper hard stop,
Wherein said lever is configured to rotate about said pin as it engages said upper hard stop and said first roller and rotates about said pin from said pedestal upper surface by a process rotation displacement when said pedestal assembly moves upwards, Wherein the lift pad is configured to separate the lift pad. 28. The method of claim 27,
Wherein the ferro-seal assembly is attached to the pad shaft at a first end of the ferro-seal assembly, the ferro-seal assembly having a first connector arm positioned at a second end opposite the first end of the ferro- Wherein the first connector arm and the second connector arm are located on opposing sides of the ferro seal assembly and are equidistant from the pad shaft,
Wherein the yoke assembly contacts the ferrule assembly in the first connector arm and the second connector arm and the yoke assembly applies the same forces to the first connector arm and the second connector arm, Wherein the arm and the second connector arm are positioned 180 degrees away from the central axis. 29. The method of claim 28,
The yoke assembly includes:
A yoke base rotatably attached to the lift pad bracket via a second pin, the yoke base being rotatable about a pin axis;
A yoke arm attached to the yoke base and extending from the yoke base parallel to the pin shaft, the yoke arm being offset from the pin by a radial displacement, the yoke arm being rotatable about the pin shaft , Said yoke arm; And
A forked end extending from the yoke base to the yoke arm, the forked end having a first fork extension configured to contact the first connector arm and a second fork extension configured to contact the second connector arm, Wherein the forked end includes a forked end. 28. The method of claim 27,
The lift pad lifting mechanism comprises:
Further comprising a rotation motor attached to the pad shaft via a belt, the rotation motor being configured to rotate the pad shaft about the central axis,
Wherein the ferro-seal assembly includes a belt driven disk attached to the pad shaft and attached to the belt. 28. The method of claim 27,
The pedestal assembly includes:
A pedestal bracket attached to the pedestal and movably attached to the main frame, the pedestal bracket configured to move the pedestal along the central axis with respect to the main frame; And
A central shaft extending from the pedestal along the central axis, the central shaft being configured to move with the pedestal,
Wherein the pad shaft is configured to separate the lift pad from the pedestal and is positioned within the center shaft. 28. The method of claim 27,
Wherein the lift pad bracket and the slide together are configured to move upwardly with respect to the pedestal assembly such that when the lever rotates about the pin, the lift pad is configured to move relative to the pedestal upper surface along the central axis Moving, assemblies. 28. The method of claim 27,
Wherein there is no relative movement between the lever and the pedestal assembly when the lever is in the neutral position without engaging the upper hard stop. 28. The method of claim 27,
Wherein the diameter of the pad top surface is smaller than the wafer diameter. 28. The method of claim 27,
Wherein the lift pad is configured to rotate relative to the pedestal upper surface when separated from the pedestal between at least a first angular orientation and a second angular orientation. An assembly for use in a process chamber for depositing a film on a wafer,
A pedestal assembly including a pedestal movably mounted in the mainframe;
A lift pad configured to move with the pedestal assembly and to be supported on the pedestal upper surface of the pedestal; And
A lift pad lift mechanism configured to separate the lift pad from the pedestal,
An upper hard stop fixed to the main frame;
A lower hard stop fixed to the main frame and positioned below the upper hard stop with respect to the main frame;
A first roller attached to the pedestal assembly;
A second roller attached to the pedestal assembly;
A slide movably attached to the pedestal assembly;
A lift pad bracket interconnected with and interconnected with the slide shaft, the slide shaft extending from the lift pad along a central axis;
A lever attached to the lift pad bracket so as to be rotatable through a pin, the lever being supported on the first roller at a neutral position when not engaged with the upper hard stop;
A ferro seal assembly configured to provide a vacuum seal seal around the pad shaft while the pad shaft is stationary or rotating, and surrounding the pad shaft; And
A yoke assembly configured to apply the same forces to opposing sides of the ferro seal assembly to offset a moment applied to the ferro seal assembly as the lever rotates about the pin, Lt; / RTI >
When the pedestal assembly moves upwards, the lever rotates about the pin as it engages the first roller and the upper hard stop, and rotates the lift pad from the pedestal top surface by a process rotation displacement Respectively,
When the pedestal assembly moves downward, the lever rotates about the pin as it engages the second roller and the lower hard stop, and rotates the lift pad from the pedestal by an end-effector access displacement Wherein the lift pad lift mechanism is configured to separate the lift pad from the lift pad. 37. The method of claim 36,
Wherein the ferro-seal assembly is attached to the pad shaft at a first end of the ferro-seal assembly, the ferro-seal assembly having a first connector arm positioned at a second end opposite the first end of the ferro- Wherein the first connector arm and the second connector arm are located on opposing sides of the ferro seal assembly and are equidistant from the pad shaft,
Wherein the yoke assembly contacts the ferrule assembly in the first connector arm and the second connector arm and the yoke assembly applies the same forces to the first connector arm and the second connector arm, Wherein the arm and the second connector arm are positioned 180 degrees away from the central axis. 39. The method of claim 37,
The yoke assembly includes:
A yoke base rotatably attached to the lift pad bracket via a second pin, the yoke base being rotatable about a pin axis;
A yoke arm attached to the yoke base and extending from the yoke base parallel to the pin axis, the yoke arm being offset from the pin by a radial displacement, the yoke arm being rotatable about the pin axis, cancer; And
A forked end extending from the yoke base to the yoke arm, the forked end having a first fork extension configured to contact the first connector arm and a second fork extension configured to contact the second connector arm, Wherein the forked end includes a forked end. 37. The method of claim 36,
The pedestal assembly includes:
A pedestal bracket attached to the pedestal and movably attached to the main frame, the pedestal bracket configured to move the pedestal along the central axis with respect to the main frame; And
A central shaft extending from the pedestal along the central axis, the central shaft being configured to move with the pedestal,
Wherein the pad shaft is configured to separate the lift pad from the pedestal and is positioned within the center shaft. 37. The method of claim 36,
The lift pad bracket and the slide together move upward relative to the pedestal assembly such that when the lever rotates about the pin, the lift pad is configured to move relative to the pedestal upper surface along the central axis, Assembly. An assembly for use in a process chamber for depositing a film on a wafer,
Means for movably mounting a pedestal assembly comprising a pedestal in a mainframe;
Means for moving the lift pad with the pedestal assembly and supporting the lift pad on the pedestal upper surface of the pedestal; And
Means for separating the lift pad from the pedestal,
Means for switching the lever assembly relative to the pedestal assembly when actuated;
Means for surrounding the pad shaft with a ferro-seal assembly and means for the ferro-seal assembly to provide a vacuum seal around the pad shaft, the ferro-seal assembly being interconnected with the lever assembly;
Means for interconnecting the yoke assembly with the lever assembly and means for the yoke assembly to apply the same forces to opposing sides of the ferro seal assembly to offset a moment applied to the ferro seal assembly when the lever assembly is actuated And means for separating the lift pad from the pedestal. 42. The method of claim 41,
Wherein the means for switching the lever assembly comprises:
Means for securing an upper hard stop to the main frame;
Means for attaching the first roller to the pedestal assembly;
Means for movably attaching the slide to the pedestal assembly;
Means for interconnecting the lift pad bracket to the pad shaft and to the slide, the pad shaft extending from the lift pad along a central axis;
Means for rotatably attaching the lever to the lift pad bracket via a pin, the lever being supported on the first roller in a neutral position unless it is engaged with the upper hard stop, Including,
Wherein the means for rotating the lever about the pin when engaged with the upper hard stop and the first roller when the pedestal assembly is moved upwards comprises means for rotating the lever from the pedestal upper surface by a process rotation displacement, The assembly, which separates the pads. 43. The method of claim 42,
Means for attaching the ferro-seal assembly to the pad shaft at a first end of the ferro-seal assembly, the ferro-seal assembly having a first connector arm positioned at a second end opposite the first end of the ferro-seal assembly, The first connector arm and the second connector arm being located on opposing sides of the ferro-seal assembly and equidistant from the pad shaft; And
Means for contacting the ferro-seal assembly and the yoke assembly in the first connector arm and the second connector arm, and means for securing the yoke assembly to apply the same forces to the first connector arm and the second connector arm Wherein the first connector arm and the second connector arm are 180 degrees apart from the central axis. 44. The method of claim 43,
Said means for contacting said ferro-seal assembly and said yoke assembly,
Means for rotatably attaching the yoke base to the lift pad bracket via a second fin, the yoke base being rotatable about a pin axis;
Means for extending from said yoke base parallel to said pin axis and attaching a yoke arm to said yoke base, said yoke arm being offset from said pin by a radial displacement, said yoke arm being rotatable about said pin axis , Said means; And
Means for providing a forked end to the yoke arm on a side away from the yoke base, the forked end having a first fork extension configured to contact the first connector arm and a second fork extension for contacting the second connector arm And a second fork extension configured. 43. The method of claim 42,
Said means for separating said lift pad from said pedestal,
Means for attaching the rotation motor to the pad shaft via a belt, all configured to rotate the pad shaft about the central axis; And
Further comprising means for attaching a disk attached to the pad shaft and driven by a belt of the ferro seal assembly with the belt. 43. The method of claim 42,
The means for movably mounting the ferro-seal assembly,
Means for attaching the pedestal bracket to the pedestal and means for movably attaching the pedestal bracket to the main frame, the pedestal bracket being configured to move the pedestal along the central axis relative to the main frame; Said means;
Means for extending a center shaft from the pedestal along the central axis, the central axis being configured to move with the pedestal; And
And means for separating the lift pad from the pedestal using the pad shaft, wherein the pad shaft is positioned within the central axis. 43. The method of claim 42,
The lift pad bracket is moved upwardly with respect to the pedestal assembly so that the lift pad is configured to move relative to the pedestal upper surface along the central axis when the lever rotates about the pin Wherein the means for sliding possibly comprises an assembly. 43. The method of claim 42,
Wherein there is no relative movement between the lever and the pedestal assembly when the lever is in the neutral position without engaging the upper hard stop. 43. The method of claim 42,
Wherein the diameter of the pad top surface is smaller than the wafer diameter. 43. The method of claim 42,
Wherein the means for separating the lift pad from the pedestal comprises means for rotating the lift pad relative to the pedestal upper surface when separated from the pedestal at least between a first angular orientation and a second angular orientation, assembly.

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