KR20140063444A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20140063444A
KR20140063444A KR1020130137736A KR20130137736A KR20140063444A KR 20140063444 A KR20140063444 A KR 20140063444A KR 1020130137736 A KR1020130137736 A KR 1020130137736A KR 20130137736 A KR20130137736 A KR 20130137736A KR 20140063444 A KR20140063444 A KR 20140063444A
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South Korea
Prior art keywords
film
oxide
oxide semiconductor
transistor
semiconductor film
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KR1020130137736A
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English (en)
Korean (ko)
Inventor
타카히로 사토
야스타카 나카자와
타카유키 쵸
순스케 코시오카
하지메 토쿠나가
마사미 진쵸우
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20140063444A publication Critical patent/KR20140063444A/ko
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    • H—ELECTRICITY
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020130137736A 2012-11-16 2013-11-13 반도체 장치 Ceased KR20140063444A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012251794 2012-11-16
JPJP-P-2012-251794 2012-11-16

Related Child Applications (1)

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KR1020170023107A Division KR102107592B1 (ko) 2012-11-16 2017-02-21 반도체 장치

Publications (1)

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KR20140063444A true KR20140063444A (ko) 2014-05-27

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Family Applications (9)

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KR1020130137736A Ceased KR20140063444A (ko) 2012-11-16 2013-11-13 반도체 장치
KR1020170023107A Expired - Fee Related KR102107592B1 (ko) 2012-11-16 2017-02-21 반도체 장치
KR1020200050672A Ceased KR20200047486A (ko) 2012-11-16 2020-04-27 반도체 장치
KR1020210049175A Ceased KR20210043551A (ko) 2012-11-16 2021-04-15 반도체 장치
KR1020210187006A Ceased KR20220001507A (ko) 2012-11-16 2021-12-24 반도체 장치
KR1020220100474A Ceased KR20220116129A (ko) 2012-11-16 2022-08-11 반도체 장치
KR1020230031756A Ceased KR20230038452A (ko) 2012-11-16 2023-03-10 반도체 장치
KR1020240045745A Ceased KR20240049257A (ko) 2012-11-16 2024-04-04 반도체 장치
KR1020250133317A Pending KR20250140050A (ko) 2012-11-16 2025-09-17 반도체 장치

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KR1020170023107A Expired - Fee Related KR102107592B1 (ko) 2012-11-16 2017-02-21 반도체 장치
KR1020200050672A Ceased KR20200047486A (ko) 2012-11-16 2020-04-27 반도체 장치
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JP2020014011A (ja) 2020-01-23
KR20240049257A (ko) 2024-04-16
JP2023101608A (ja) 2023-07-21
TWI661553B (zh) 2019-06-01
US20180053856A1 (en) 2018-02-22
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US10886413B2 (en) 2021-01-05
JP6189182B2 (ja) 2017-08-30
US20150270404A1 (en) 2015-09-24
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US10361318B2 (en) 2019-07-23
CN103824886B (zh) 2019-03-01
US20190341502A1 (en) 2019-11-07
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US20230317857A1 (en) 2023-10-05
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US12243943B2 (en) 2025-03-04
US11710794B2 (en) 2023-07-25
US20140138674A1 (en) 2014-05-22
KR20200047486A (ko) 2020-05-07
US20160035567A1 (en) 2016-02-04
JP2014116588A (ja) 2014-06-26
TW202018938A (zh) 2020-05-16
KR102107592B1 (ko) 2020-05-07
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JP2018026598A (ja) 2018-02-15
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TWI613813B (zh) 2018-02-01
US20210020785A1 (en) 2021-01-21
US9219165B2 (en) 2015-12-22
US20250159936A1 (en) 2025-05-15
KR20210043551A (ko) 2021-04-21
US9449819B2 (en) 2016-09-20
JP6595563B2 (ja) 2019-10-23
JP6082423B2 (ja) 2017-02-15
US9812583B2 (en) 2017-11-07
US9087726B2 (en) 2015-07-21
JP2026104926A (ja) 2026-06-25
CN107068767A (zh) 2017-08-18
JP7524408B2 (ja) 2024-07-29
KR20250140050A (ko) 2025-09-24
US20160293641A1 (en) 2016-10-06
JP2015122509A (ja) 2015-07-02
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JP6982040B2 (ja) 2021-12-17
TW201427014A (zh) 2014-07-01
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