CN107978560B - 背沟道蚀刻型tft基板及其制作方法 - Google Patents

背沟道蚀刻型tft基板及其制作方法 Download PDF

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CN107978560B
CN107978560B CN201711167354.5A CN201711167354A CN107978560B CN 107978560 B CN107978560 B CN 107978560B CN 201711167354 A CN201711167354 A CN 201711167354A CN 107978560 B CN107978560 B CN 107978560B
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layer
silicon oxide
oxide film
layer silicon
hydrophobicity
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CN107978560A (zh
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姜春生
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201711167354.5A priority Critical patent/CN107978560B/zh
Priority to PCT/CN2017/117321 priority patent/WO2019100489A1/zh
Priority to US15/749,096 priority patent/US10332988B2/en
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    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode

Abstract

本发明提供一种背沟道蚀刻型TFT基板及其制作方法。本发明的背沟道蚀刻型TFT基板的制作方法采用低沉积功率低氧含量沉积第一层氧化硅薄膜，之后提高沉积功率维持低氧含量在第一层氧化硅薄膜上沉积第二层氧化硅薄膜，所述第一层氧化硅薄膜与第二层氧化硅薄膜组成钝化层，最后利用离子注入方法对第二层氧化硅薄膜的浅表层进行氧元素注入，使第二层氧化硅薄膜的浅表层中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，保证钝化层与空气接触的一面具有较强的疏水性，防止外界水汽进入背沟道，同时保证钝化层与IGZO有源层接触的一面具有较低氧含量，减少钝化层和IGZO有源层界面形成非平衡O‑离子的几率。

Description

背沟道蚀刻型TFT基板及其制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种背沟道蚀刻型TFT基板及其制作方法。
背景技术
液晶显示装置(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如：移动电话、个人数字助理(PDA)、数字相机、计算机屏幕和笔记本电脑屏幕等。
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快，而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点，因而具有广阔的应用前景。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
薄膜晶体管(Thin Film Transistor，简称TFT)是目前液晶显示装置和有源矩阵型OLED显示装置中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。薄膜晶体管具有多种结构，制备相应结构的薄膜晶体管的材料也具有多种，非晶硅(a-Si)材料是比较常见的一种。
随着液晶显示装置和OLED显示装置朝着大尺寸和高分辨率的方向发展，传统的a-Si仅有1cm2/(Vs)左右的迁移率已经无法满足要求，以铟镓锌氧化物(IGZO)为代表的金属氧化物材料具备超过10cm2/(Vs)以上的迁移率，而且相应薄膜晶体管的制备与现有的a-Si为半导体驱动的产线的兼容性好，近年来迅速成为显示领域研发的重点。
相对于传统的a-Si TFT，IGZO TFT具有以下优势：
1、提高显示背板的分辨率，在保证相同透过率的前提下，IGZO TFT显示背板的分辨率可以做到a-Si TFT的2倍以上，IGZO材料中的载流子浓度高，迁移率大，可以缩小TFT的体积，保证分辨率的提升；
2、减少显示器件的能耗，IGZO TFT与a-Si TFT、LTPS TFT相比，漏电流小于1pA；驱动频率由原来的30-50Hz减少到2-5Hz，通过特殊工艺，甚至可以达到1Hz，虽然减少TFT的驱动次数，仍然可以维持液晶分子的配向，不影响画面的质量，从而减少显示背板的耗电量；另外，IGZO半导体材料的高迁移率使得较小尺寸的TFT即可提供足够的充电能力和较高的电容值，而且提高了液晶面板的开口率，光穿透的有效面积变大，可以用较少的背板组件或低功率消耗达到相同的亮度，减少能耗；
3、通过采用间歇式驱动等方式，能够降低液晶显示器驱动电路的噪点对触摸屏检测电路造成的影响，可以实现更高的灵敏度，甚至尖头的圆珠笔笔端也能够响应，而且由于画面无更新时可以切断电源，因此其在节能的效果上表现更为优秀。
目前，IGZO作为半导体有源层的TFT一般采用刻蚀阻挡(ESL)结构，由于有刻蚀阻挡层(Etch Stop Layer，ESL)存在，源漏极(Source/Drain)的蚀刻过程时，刻蚀阻挡层可以有效的保护IGZO不受到影响，保证TFT具有优异的半导体特性。但是ESL结构的IGZO TFT的制备过程较为复杂，需要经过6次黄光工艺，不利于降低成本，因此业界普遍追求黄光工艺更少的背沟道蚀刻(Back Channel Etching，BCE)结构的IGZO TFT的开发。
背沟道蚀刻结构的IGZO TFT器件在制备完成后，具有两个平衡：第一个平衡是H2O分解为电子和极性水分子；第二个平衡是非平衡O-离子获得电子形成电子陷阱态。任意一个平衡被破坏时，TFT器件的性能都会受到影响。针对第一个平衡，当钝化层表面的空气中的H2O增加时，平衡向H2O分解方向移动，电子和极性水分子增加，对于N型电子导电性TFT器件而言，半导体特性曲线向负向飘移，器件性能受到影响；针对第二个平衡，当钝化层和IGZO有源层界面的氧含量过高时，形成非平衡O-离子，平衡向形成电子陷阱态移动并俘获电子，对于N型电子导电性TFT器件而言，半导体特性曲线向正向飘移，器件性能受到影响。
发明内容
本发明的目的在于提供一种背沟道蚀刻型TFT基板的制作方法，能够保证钝化层与空气接触的一面具有较强的疏水性，防止外界水汽进入背沟道，同时保证钝化层与IGZO有源层接触的一面具有较低氧含量，减少钝化层和IGZO有源层界面形成非平衡O-离子的几率，同时能够防止源漏极被氧化，保证器件性能稳定。
本发明的目的还在于提供一种背沟道蚀刻型TFT基板，具有较强的器件稳定性。
为实现上述目的，本发明提供一种背沟道蚀刻型TFT基板的制作方法，包括：
提供衬底基板，在所述衬底基板上从下到上依次形成栅极、栅极绝缘层及有源层，在所述有源层上形成间隔设置的源极与漏极；
采用等离子体增强化学气相沉积法在所述源极、漏极及有源层上沉积第一层氧化硅薄膜，在所述第一层氧化硅薄膜上沉积第二层氧化硅薄膜，所述第一层氧化硅薄膜与第二层氧化硅薄膜中的Si：O原子比例相同，均为1：X，其中X小于2；所述第一层氧化硅薄膜与第二层氧化硅薄膜组成钝化层；
利用离子注入方法对第二层氧化硅薄膜的浅表层进行氧元素注入，使所述第二层氧化硅薄膜的浅表层中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，即所述第二层氧化硅薄膜的浅表层中的Si：O原子比例为1：Y，其中Y介于1.8与2之间，且Y大于X，制得背沟道蚀刻型TFT基板。
采用等离子体增强化学气相沉积法沉积第一层氧化硅薄膜与第二层氧化硅薄膜时，所述第二层氧化硅薄膜的沉积功率大于所述第一层氧化硅薄膜的沉积功率，因此所述第二层氧化硅薄膜中Si-O-Si键的键角小于所述第一层氧化硅薄膜中Si-O-Si键的键角，从而所述第二层氧化硅薄膜的疏水性大于所述第一层氧化硅薄膜的疏水性。
所述第二层氧化硅薄膜的浅表层的疏水性大于所述第二层氧化硅薄膜中除浅表层以外的其它区域的疏水性，所述第二层氧化硅薄膜中除浅表层以外的其它区域的疏水性大于所述第一层氧化硅薄膜的疏水性。
所述第二层氧化硅薄膜的厚度大于所述第一层氧化硅薄膜的厚度。
所述第一层氧化硅薄膜的厚度为所述第二层氧化硅薄膜的厚度为
本发明提供一种背沟道蚀刻型TFT基板，包括：衬底基板、设于所述衬底基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的有源层、设于所述有源层上且间隔设置的源极与漏极、以及设于所述源极、漏极及有源层上的钝化层；
所述钝化层包括设于所述源极、漏极及有源层上的第一层氧化硅薄膜与设于所述第一层氧化硅薄膜上的第二层氧化硅薄膜；所述第二层氧化硅薄膜的浅表层中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，即所述第二层氧化硅薄膜的浅表层中的Si：O原子比例为1：Y，其中Y介于1.8与2之间；所述第二层氧化硅薄膜中除浅表层以外的其它区域与所述第一层氧化硅薄膜中的Si：O原子比例相同，均为1：X，其中X小于Y。
所述第二层氧化硅薄膜中Si-O-Si键的键角小于所述第一层氧化硅薄膜中Si-O-Si键的键角，因此所述第二层氧化硅薄膜的疏水性大于所述第一层氧化硅薄膜的疏水性。
所述第二层氧化硅薄膜的浅表层的疏水性大于所述第二层氧化硅薄膜中除浅表层以外的其它区域的疏水性，所述第二层氧化硅薄膜中除浅表层以外的其它区域的疏水性大于所述第一层氧化硅薄膜的疏水性。
所述第二层氧化硅薄膜的厚度大于所述第一层氧化硅薄膜的厚度。
所述第一层氧化硅薄膜的厚度为所述第二层氧化硅薄膜的厚度为
本发明的有益效果：本发明的背沟道蚀刻型TFT基板的制作方法采用低沉积功率低氧含量沉积第一氧化硅薄膜，之后提高沉积功率维持低氧含量在第一层氧化硅薄膜上沉积第二层氧化硅薄膜，所述第一层氧化硅薄膜与第二层氧化硅薄膜组成钝化层，最后利用离子注入方法对第二层氧化硅薄膜的浅表层进行氧元素注入，使第二层氧化硅薄膜的浅表层中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，保证钝化层与空气接触的一面具有较强的疏水性，防止外界水汽进入背沟道，同时保证钝化层与IGZO有源层接触的一面具有较低氧含量，减少钝化层和IGZO有源层界面形成非平衡O-离子的几率，同时能够防止源漏极被氧化，保证器件性能稳定。本发明的背沟道蚀刻型TFT基板采用上述方法制得，具有较强的器件稳定性。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的背沟道蚀刻型TFT基板的制作方法的流程图；
图2为本发明的背沟道蚀刻型TFT基板的制作方法的步骤1的示意图；
图3为本发明的背沟道蚀刻型TFT基板的制作方法的步骤2的示意图；
图4与图5为本发明的背沟道蚀刻型TFT基板的制作方法的步骤3的示意图且图5为本发明的背沟道蚀刻型TFT基板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种背沟道蚀刻型TFT基板的制作方法，包括如下步骤：
步骤1、如图2所示，提供衬底基板10，在所述衬底基板10上从下到上依次形成栅极20、栅极绝缘层30及有源层40，在所述有源层40上形成间隔设置的源极51与漏极52。
具体的，所述栅极绝缘层30的材料包括氧化硅(SiOx)；所述有源层40的材料包括铟镓锌氧化物(IGZO)；所述源极51与漏极52的材料包括铜(Cu)。
步骤2、如图3所示，采用等离子体增强化学气相沉积法(PECVD)在所述源极51、漏极52及有源层40上沉积第一层氧化硅薄膜61，在所述第一层氧化硅薄膜61上沉积第二层氧化硅薄膜62，所述第一层氧化硅薄膜61与第二层氧化硅薄膜62中的Si：O原子比例相同，均为1：X，其中X小于2；所述第一层氧化硅薄膜61与第二层氧化硅薄膜62组成钝化层60。
具体的，采用等离子体增强化学气相沉积法沉积第一层氧化硅薄膜61与第二层氧化硅薄膜62时，所述第二层氧化硅薄膜62的沉积功率大于所述第一层氧化硅薄膜61的沉积功率，因此所述第二层氧化硅薄膜62中Si-O-Si键的键角小于所述第一层氧化硅薄膜61中Si-O-Si键的键角，从而所述第二层氧化硅薄膜62的疏水性大于所述第一层氧化硅薄膜61的疏水性。理论依据为：随着等离子体增强化学气相沉积的沉积功率的增大，氧化硅薄膜内部Si-O-Si键的振动吸收峰发生蓝移，键角逐渐减小，而氧化硅薄膜的接触角(疏水性)逐渐增大，接触角最大时，氧化硅薄膜内部Si-O-Si键的键角接近112°，这与水分子的键角105°非常接近，当Si-O-Si键的键角接近水分子的键角时，氧化硅薄膜的接触角(疏水性)最大。
具体的，采用较低功率来沉积所述第一层氧化硅薄膜61的目的是防止能量过高的等离子体对有源层40进行轰击造成有源层40表面受到损害。
具体的，采用等离子体增强化学气相沉积法沉积第一层氧化硅薄膜61与第二层氧化硅薄膜62的过程均保持低氧含量，保证第一层氧化硅薄膜61具有较低的氧含量，减少第一层氧化硅薄膜61和IGZO有源层40界面形成非平衡O-离子的几率，保证TFT器件性能稳定。
具体的，所述第二层氧化硅薄膜62的厚度大于所述第一层氧化硅薄膜61的厚度。
优选的，所述第一层氧化硅薄膜61的厚度为所述第二层氧化硅薄膜62的厚度为
步骤3、如图4与图5所示，利用离子注入方法对第二层氧化硅薄膜62的浅表层621进行氧元素注入，使所述第二层氧化硅薄膜62的浅表层621中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，即所述第二层氧化硅薄膜62的浅表层621中的Si：O原子比例为1：Y，其中Y介于1.8与2之间，且Y大于X，制得背沟道蚀刻型TFT基板。
具体的，对第二层氧化硅薄膜62进行氧元素注入之前，所述第一层氧化硅薄膜61与第二层氧化硅薄膜62内部均含有大量的氧空位，当水分子与所述第一层氧化硅薄膜61与第二层氧化硅薄膜62接触时被氧空位吸引，从而所述第一层氧化硅薄膜61与第二层氧化硅薄膜62表现为一定程度的亲水性；
对第二层氧化硅薄膜62进行氧元素注入之后，由于所述第二层氧化硅薄膜62的浅表层621中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，即所述第二层氧化硅薄膜62的浅表层621内部没有或含有少量的氧空位，当水分子与第二层氧化硅薄膜62接触时晶格氧排斥，所述第二层氧化硅薄膜62的浅表层621体现出较强的疏水性，保证环境中的H2O无法通过第二层氧化硅薄膜62进入TFT器件的背沟道，防止环境中水分子的极性对TFT性能造成影响；同时，由于第一层氧化硅薄膜61中的氧含量较低，减少了第一层氧化硅薄膜61和IGZO有源层40界面形成非平衡O-离子的几率，同时能够防止采用铜制作的源漏极52被氧化，保证制得的背沟道蚀刻型TFT基板的性能稳定。
具体的，所述第二层氧化硅薄膜62的浅表层621的疏水性大于所述第二层氧化硅薄膜62中除浅表层621以外的其它区域的疏水性，所述第二层氧化硅薄膜62中除浅表层621以外的其它区域的疏水性大于所述第一层氧化硅薄膜61的疏水性。
本发明的背沟道蚀刻型TFT基板的制作方法采用低沉积功率低氧含量沉积第一层氧化硅薄膜61，之后提高沉积功率维持低氧含量在第一层氧化硅薄膜61上沉积第二层氧化硅薄膜62，所述第一层氧化硅薄膜61与第二层氧化硅薄膜62组成钝化层60，最后利用离子注入方法对第二层氧化硅薄膜62的浅表层621进行氧元素注入，使所述第二层氧化硅薄膜62的浅表层621中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，保证钝化层60与空气接触的一面具有较强的疏水性，防止外界水汽进入背沟道，同时保证钝化层60与IGZO有源层40接触的一面具有较低氧含量，减少钝化层60和IGZO有源层40界面形成非平衡O-离子的几率，同时能够防止源漏极52被氧化，保证器件性能稳定。
请参阅图5，基于上述背沟道蚀刻型TFT基板的制作方法，本发明还提供一种背沟道蚀刻型TFT基板，包括：衬底基板10、设于所述衬底基板10上的栅极20、设于所述栅极20上的栅极绝缘层30、设于所述栅极绝缘层30上的有源层40、设于所述有源层40上且间隔设置的源极51与漏极52、以及设于所述源极51、漏极52及有源层40上的钝化层60；
所述钝化层60包括设于所述源极51、漏极52及有源层40上的第一层氧化硅薄膜61与设于所述第一层氧化硅薄膜61上的第二层氧化硅薄膜62；所述第二层氧化硅薄膜62的浅表层621中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，即所述第二层氧化硅薄膜62的浅表层621中的Si：O原子比例为1：Y，其中Y介于1.8与2之间；所述第二层氧化硅薄膜62中除浅表层621以外的其它区域与所述第一层氧化硅薄膜61中的Si：O原子比例相同，均为1：X，其中X小于Y。
具体的，所述第二层氧化硅薄膜62中Si-O-Si键的键角小于所述第一层氧化硅薄膜61中Si-O-Si键的键角，因此所述第二层氧化硅薄膜62的疏水性大于所述第一层氧化硅薄膜61的疏水性。
具体的，由于所述第二层氧化硅薄膜62的浅表层621中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，因此所述第二层氧化硅薄膜62的浅表层621相较于所述第二层氧化硅薄膜62中除浅表层621以外的其它区域及第一层氧化硅薄膜61表现出较强的疏水性。
具体的，所述第二层氧化硅薄膜62的浅表层621的疏水性大于所述第二层氧化硅薄膜62中除浅表层621以外的其它区域的疏水性，所述第二层氧化硅薄膜62中除浅表层621以外的其它区域的疏水性大于所述第一层氧化硅薄膜61的疏水性。
具体的，所述栅极绝缘层30的材料包括氧化硅(SiOx)；所述有源层40的材料包括铟镓锌氧化物(IGZO)；所述源极51与漏极52的材料包括铜(Cu)。
具体的，所述第二层氧化硅薄膜62的厚度大于所述第一层氧化硅薄膜61的厚度。
优选的，所述第一层氧化硅薄膜61的厚度为所述第二层氧化硅薄膜62的厚度为
本发明的背沟道蚀刻型TFT基板采用上述方法制得，其钝化层60包括第一层氧化硅薄膜61与设于所述第一层氧化硅薄膜61上的第二层氧化硅薄膜62；所述第二层氧化硅薄膜62的浅表层621中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，所述第一层氧化硅薄膜61的氧含量低于所述第二层氧化硅薄膜62的浅表层621中的氧含量，保证钝化层60与空气接触的一面具有较强的疏水性，防止外界水汽进入背沟道，同时保证钝化层60与IGZO有源层40接触的一面具有较低氧含量，减少钝化层60和IGZO有源层40界面形成非平衡O-离子的几率，同时能够防止源漏极52被氧化，保证器件性能稳定。
综上所述，本发明提供一种背沟道蚀刻型TFT基板及其制作方法。本发明的背沟道蚀刻型TFT基板的制作方法采用低沉积功率低氧含量沉积第一层氧化硅薄膜，之后提高沉积功率维持低氧含量在第一层氧化硅薄膜上沉积第二层氧化硅薄膜，所述第一层氧化硅薄膜与第二层氧化硅薄膜组成钝化层，最后利用离子注入方法对第二层氧化硅薄膜的浅表层进行氧元素注入，使第二层氧化硅薄膜的浅表层中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，保证钝化层与空气接触的一面具有较强的疏水性，防止外界水汽进入背沟道，同时保证钝化层与IGZO有源层接触的一面具有较低氧含量，减少钝化层和IGZO有源层界面形成非平衡O-离子的几率，同时能够防止源漏极被氧化，保证器件性能稳定。本发明的背沟道蚀刻型TFT基板采用上述方法制得，具有较强的器件稳定性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种背沟道蚀刻型TFT基板的制作方法，其特征在于，包括：
提供衬底基板(10)，在所述衬底基板(10)上从下到上依次形成栅极(20)、栅极绝缘层(30)及有源层(40)，在所述有源层(40)上形成间隔设置的源极(51)与漏极(52)；
采用等离子体增强化学气相沉积法在所述源极(51)、漏极(52)及有源层(40)上沉积第一层氧化硅薄膜(61)，在所述第一层氧化硅薄膜(61)上沉积第二层氧化硅薄膜(62)，所述第一层氧化硅薄膜(61)与第二层氧化硅薄膜(62)中的Si：O原子比例相同，均为1：X，其中X小于2；所述第一层氧化硅薄膜(61)与第二层氧化硅薄膜(62)组成钝化层(60)；
利用离子注入方法对第二层氧化硅薄膜(62)的浅表层(621)进行氧元素注入，使所述第二层氧化硅薄膜(62)的浅表层(621)中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，即所述第二层氧化硅薄膜(62)的浅表层(621)中的Si：O原子比例为1：Y，其中Y介于1.8与2之间，且Y大于X，制得背沟道蚀刻型TFT基板；
采用等离子体增强化学气相沉积法沉积第一层氧化硅薄膜(61)与第二层氧化硅薄膜(62)时，所述第二层氧化硅薄膜(62)的沉积功率大于所述第一层氧化硅薄膜(61)的沉积功率，因此所述第二层氧化硅薄膜(62)中Si-O-Si键的键角小于所述第一层氧化硅薄膜(61)中Si-O-Si键的键角，从而所述第二层氧化硅薄膜(62)的疏水性大于所述第一层氧化硅薄膜(61)的疏水性。
2.如权利要求1所述的背沟道蚀刻型TFT基板的制作方法，其特征在于，所述第二层氧化硅薄膜(62)的浅表层(621)的疏水性大于所述第二层氧化硅薄膜(62)中除浅表层(621)以外的其它区域的疏水性，所述第二层氧化硅薄膜(62)中除浅表层(621)以外的其它区域的疏水性大于所述第一层氧化硅薄膜(61)的疏水性。
3.如权利要求1所述的背沟道蚀刻型TFT基板的制作方法，其特征在于，所述第二层氧化硅薄膜(62)的厚度大于所述第一层氧化硅薄膜(61)的厚度。
4.如权利要求3所述的背沟道蚀刻型TFT基板的制作方法，其特征在于，所述第一层氧化硅薄膜(61)的厚度为所述第二层氧化硅薄膜(62)的厚度为
5.一种背沟道蚀刻型TFT基板，其特征在于，包括：衬底基板(10)、设于所述衬底基板(10)上的栅极(20)、设于所述栅极(20)上的栅极绝缘层(30)、设于所述栅极绝缘层(30)上的有源层(40)、设于所述有源层(40)上且间隔设置的源极(51)与漏极(52)、以及设于所述源极(51)、漏极(52)及有源层(40)上的钝化层(60)；
所述钝化层(60)包括设于所述源极(51)、漏极(52)及有源层(40)上的第一层氧化硅薄膜(61)与设于所述第一层氧化硅薄膜(61)上的第二层氧化硅薄膜(62)；所述第二层氧化硅薄膜(62)的浅表层(621)中的Si：O原子比例与SiO2中的Si：O原子比例接近或相同，即所述第二层氧化硅薄膜(62)的浅表层(621)中的Si：O原子比例为1：Y，其中Y介于1.8与2之间；所述第二层氧化硅薄膜(62)中除浅表层(621)以外的其它区域与所述第一层氧化硅薄膜(61)中的Si：O原子比例相同，均为1：X，其中X小于Y；
所述第二层氧化硅薄膜(62)中Si-O-Si键的键角小于所述第一层氧化硅薄膜(61)中Si-O-Si键的键角，因此所述第二层氧化硅薄膜(62)的疏水性大于所述第一层氧化硅薄膜(61)的疏水性。
6.如权利要求5所述的背沟道蚀刻型TFT基板，其特征在于，所述第二层氧化硅薄膜(62)的浅表层(621)的疏水性大于所述第二层氧化硅薄膜(62)中除浅表层(621)以外的其它区域的疏水性，所述第二层氧化硅薄膜(62)中除浅表层(621)以外的其它区域的疏水性大于所述第一层氧化硅薄膜(61)的疏水性。
7.如权利要求5所述的背沟道蚀刻型TFT基板，其特征在于，所述第二层氧化硅薄膜(62)的厚度大于所述第一层氧化硅薄膜(61)的厚度。
8.如权利要求7所述的背沟道蚀刻型TFT基板，其特征在于，所述第一层氧化硅薄膜(61)的厚度为所述第二层氧化硅薄膜(62)的厚度为
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