JP6398000B2 - 薄膜トランジスタアレイ基板 - Google Patents
薄膜トランジスタアレイ基板 Download PDFInfo
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- JP6398000B2 JP6398000B2 JP2017518092A JP2017518092A JP6398000B2 JP 6398000 B2 JP6398000 B2 JP 6398000B2 JP 2017518092 A JP2017518092 A JP 2017518092A JP 2017518092 A JP2017518092 A JP 2017518092A JP 6398000 B2 JP6398000 B2 JP 6398000B2
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- Prior art keywords
- active layer
- layer
- insulating film
- intermediate layer
- film transistor
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- 239000010409 thin film Substances 0.000 title claims description 148
- 239000000758 substrate Substances 0.000 title claims description 123
- 239000010410 layer Substances 0.000 claims description 490
- 239000010408 film Substances 0.000 claims description 208
- 239000004065 semiconductor Substances 0.000 claims description 57
- 239000011701 zinc Substances 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 239000011229 interlayer Substances 0.000 claims description 43
- 229910021480 group 4 element Inorganic materials 0.000 claims description 42
- 239000001257 hydrogen Substances 0.000 claims description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 28
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 27
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 25
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 24
- 229910052738 indium Inorganic materials 0.000 claims description 23
- 229910052725 zinc Inorganic materials 0.000 claims description 21
- 229910052733 gallium Inorganic materials 0.000 claims description 20
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 238000000034 method Methods 0.000 description 75
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 70
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 42
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- 230000000052 comparative effect Effects 0.000 description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 36
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 34
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- 239000011733 molybdenum Substances 0.000 description 34
- 229910052782 aluminium Inorganic materials 0.000 description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 31
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
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- 229910003437 indium oxide Inorganic materials 0.000 description 13
- 229910052759 nickel Inorganic materials 0.000 description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 12
- 229910052779 Neodymium Inorganic materials 0.000 description 12
- 229910052804 chromium Inorganic materials 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 description 10
- 239000013256 coordination polymer Substances 0.000 description 9
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 8
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- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
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- 229910016553 CuOx Inorganic materials 0.000 description 5
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- 238000002294 plasma sputter deposition Methods 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
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- 229910000431 copper oxide Inorganic materials 0.000 description 3
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
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- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
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- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
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- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Description
Claims (9)
- 基板と、
前記基板上に位置するアクティブ層と、
前記アクティブ層上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置するゲート電極と、
前記ゲート電極上に位置する層間絶縁膜と、
前記層間絶縁膜上に位置し、前記アクティブ層にそれぞれ接続されるソース電極及びドレイン電極を含み、
前記アクティブ層と前記ゲート絶縁膜との間に位置し、4族元素を含む酸化物半導体からなる中間層を含み、
前記中間層は、In 1.1 Ga 1 Zn 1 Si (0.5〜2) O (7.3〜8.15) の原子比でなる、薄膜トランジスタアレイ基板。 - 前記中間層の厚さは40〜70Åである、請求項1に記載の薄膜トランジスタアレイ基板。
- 基板と、
前記基板上に位置するアクティブ層と、
前記アクティブ層上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置するゲート電極と、
前記ゲート電極上に位置する層間絶縁膜と、
前記層間絶縁膜上に位置し、前記アクティブ層にそれぞれ接続されるソース電極及びドレイン電極を含み、
前記アクティブ層と前記ゲート絶縁膜との間に位置し、4族元素を含む酸化物半導体からなる中間層を含み、
前記中間層は、インジウム、ガリウム及び亜鉛を含み、4族元素をさらに含み、
前記4族元素は、シリコンであり、
前記シリコンの含有量は、2.9乃至3.2×1022cm−3である、薄膜トランジスタアレイ基板。 - 基板と、
前記基板上に位置するアクティブ層と、
前記アクティブ層上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置するゲート電極と、
前記ゲート電極上に位置する層間絶縁膜と、
前記層間絶縁膜上に位置し、前記アクティブ層にそれぞれ接続されるソース電極及びドレイン電極を含み、
前記アクティブ層と前記ゲート絶縁膜との間に位置し、4族元素を含む酸化物半導体からなる中間層を含み、
前記中間層は、インジウム、ガリウム及び亜鉛を含み、4族元素をさらに含み、
前記4族元素は、シリコンであり、
前記中間層は、水素をさらに含み、前記水素の含有量は、1.2乃至1.6×1021cm−3である、薄膜トランジスタアレイ基板。 - 前記中間層の厚さは、50〜100Åである、請求項3又は4に記載の薄膜トランジスタアレイ基板。
- 基板と、
前記基板上に位置するゲート電極と、
前記ゲート電極上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置するアクティブ層と、
前記アクティブ層上に位置するエッチストッパと、
前記エッチストッパ上に位置し、前記アクティブ層にそれぞれ接続されるソース電極及びドレイン電極を含み、
前記アクティブ層と前記ゲート絶縁膜との間に位置し、4族元素を含む酸化物半導体からなる中間層を含み、
前記中間層は、In 0.8 Ga 1 Zn 1 Si 0.5 O (4.2〜4.7) の原子比でなる、薄膜トランジスタアレイ基板。 - 前記中間層の厚さは、50〜100Åである、請求項6に記載の薄膜トランジスタアレイ基板。
- 基板と、
前記基板上に位置し、下部のアクティブ層と中間層を含むアクティブ層と、
前記アクティブ層上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置するゲート電極と、
前記ゲート電極上に位置する層間絶縁膜と、
前記層間絶縁膜上に位置し、前記アクティブ層にそれぞれ接続されるソース電極及びドレイン電極を含み、
前記中間層は、4族元素を含む酸化物半導体からなり、
前記中間層は、In 5 Ga 1 Zn 1 Si (12〜13) O 35 の原子比でなる、薄膜トランジスタアレイ基板。 - 前記中間層の厚さは、50〜100Åである、請求項8に記載の薄膜トランジスタアレイ基板。
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KR20140181296 | 2014-12-16 | ||
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PCT/KR2015/013802 WO2016099150A1 (ko) | 2014-12-16 | 2015-12-16 | 박막트랜지스터 어레이 기판 |
KR10-2015-0179783 | 2015-12-16 | ||
KR1020150179783A KR102518392B1 (ko) | 2014-12-16 | 2015-12-16 | 박막트랜지스터 어레이 기판 |
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JP6811096B2 (ja) * | 2017-01-12 | 2021-01-13 | 株式会社Joled | 半導体装置、表示装置および電子機器 |
KR102393552B1 (ko) * | 2017-11-09 | 2022-05-02 | 엘지디스플레이 주식회사 | 수소 차단막을 갖는 박막 트랜지스터 및 이를 포함하는 표시장치 |
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JPWO2020109923A1 (ja) * | 2018-11-30 | 2021-12-09 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
CN109950134B (zh) * | 2019-03-19 | 2022-01-21 | 中国科学院上海高等研究院 | 具有氧化物薄膜的结构及其制备方法 |
KR102315554B1 (ko) * | 2019-04-09 | 2021-10-21 | 한양대학교 산학협력단 | 수소 확산 방지막을 포함하는 표시 장치 및 그 제조 방법 |
KR20200128324A (ko) | 2019-05-03 | 2020-11-12 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
US11217684B2 (en) * | 2019-05-19 | 2022-01-04 | Mikro Mesa Technology Co., Ltd. | Method for rapidly gathering sub-threshold swing from thin film transistor |
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GB201705910D0 (en) | 2017-05-24 |
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US10192957B2 (en) | 2019-01-29 |
GB2548721B (en) | 2020-11-11 |
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GB2548721A (en) | 2017-09-27 |
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KR102699702B1 (ko) | 2024-08-28 |
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KR20160073923A (ko) | 2016-06-27 |
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DE112015005620T5 (de) | 2017-09-07 |
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