CN107978607B - 背沟道蚀刻型氧化物半导体tft基板的制作方法 - Google Patents
背沟道蚀刻型氧化物半导体tft基板的制作方法 Download PDFInfo
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Abstract
本发明提供一种背沟道蚀刻型氧化物半导体TFT基板的制作方法，通过先在源极、漏极及有源层上沉积第一钝化层，然后采用含氧元素的等离子体对所述第一钝化层表面进行处理，使微量的氧元素经由所述第一钝化层渗透至所述有源层的沟道区的浅表层，对沟道区的浅表层进行氧元素的补充，保证浅表层的氧元素平衡，并且在等离子处理过程中，所述第一钝化层起到源极和漏极的阻挡层的作用，这样仅有微量的氧元素能够到达源极和漏极，不足以对源极和漏极造成氧化，保证TFT的工作稳定性。
Description
技术领域
本发明涉及显示技术领域，尤其涉及一种背沟道蚀刻型氧化物半导体TFT基板的制作方法。
背景技术
液晶显示装置(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如：移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快，而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点，因而具有广阔的应用前景。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
薄膜晶体管(Thin Film Transistor，简称TFT)是目前液晶显示装置和有源矩阵型OLED显示装置中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。薄膜晶体管具有多种结构，制备相应结构的薄膜晶体管的材料也具有多种，非晶硅(a-Si)材料是比较常见的一种。然而，随着液晶显示装置和OLED显示装置朝着大尺寸和高分辨率的方向发展，传统的a-Si仅有1cm2/(Vs)左右的迁移率已经无法满足要求，以铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)为代表的金属氧化物材料具备超过10cm2/(Vs)以上的迁移率，而且相应薄膜晶体管的制备与现有的a-Si为半导体驱动的薄膜晶体管产线的兼容性好，近年来迅速成为显示领域研发的重点。
相对于传统的a-Si TFT，IGZO TFT具有以下优势：
1、提高显示背板的分辨率，在保证相同透过率的前提下，IGZO TFT显示背板的分辨率可以做到a-Si TFT的2倍以上，IGZO材料中的载流子浓度高，迁移率大，可以缩小TFT的体积，保证分辨率的提升；
2、减少显示器件的能耗，IGZO TFT与a-Si TFT、LTPS TFT相比，漏电流小于1pA；驱动频率由原来的30-50Hz减少到2-5Hz，通过特殊工艺，甚至可以达到1Hz，虽然减少TFT的驱动次数，仍然可以维持液晶分子的配向，不影响画面的质量，从而减少显示背板的耗电量；另外，IGZO半导体材料的高迁移率使得较小尺寸的TFT即可提供足够的充电能力和较高的电容值，而且提高了液晶面板的开口率，光穿透的有效面积变大，可以用较少的背板组件或低功率消耗达到相同的亮度，减少能耗；
3、通过采用间歇式驱动等方式，能够降低液晶显示器驱动电路的噪点对触摸屏检测电路造成的影响，可以实现更高的灵敏度，甚至尖头的圆珠笔笔端也能够响应，而且由于画面无更新时可以切断电源，因此其在节能的效果上表现更为优秀。
目前，IGZO作为半导体有源层的TFT一般采用刻蚀阻挡(ESL)结构，由于有刻蚀阻挡层(Etch Stop Layer)存在，源漏极(Source/Drain)的蚀刻过程中，刻蚀阻挡层可以有效的保护IGZO不受到影响，保证TFT具有优异的半导体特性。但是ESL结构的IGZO TFT的制备过程较为复杂，需要经过6次黄光工艺，不利于降低成本，因此业界普遍追求黄光工艺更少的背沟道蚀刻(BCE)结构的IGZO TFT的开发。
BCE结构的IGZO TFT的实现是在采用金属铜制作源漏极的同时，去除刻蚀阻挡层(Etch Stop Layer)，达到减少一次黄光工艺的目的，然而现有的铜蚀刻液不可避免的会对IGZO有源层造成一定程度的损害，使IGZO有源层的表面特性发生改变，从而使TFT基板的稳定性变差。目前常用的铜刻蚀液为双氧水(H2O2)系，对IGZO有源层的蚀刻伤害较小，尤其是无氟(F)元素铜刻蚀液，但是通过实验验证，无F元素的铜刻蚀液仍然对IGZO有源层有伤害，尤其是对背沟道浅表层中的氧(O)元素平衡的破坏，容易影响TFT器件的漏电流(Ioff)和工作稳定性。
发明内容
本发明的目的在于提供一种背沟道蚀刻型氧化物半导体TFT基板的制作方法，能够保证沟道区的浅表层的氧元素平衡，保证TFT的工作稳定性。
为实现上述目的，本发明提供一种背沟道蚀刻型氧化物半导体TFT基板的制作方法，包括：
提供衬底基板，在所述衬底基板上形成栅极，在所述衬底基板上形成覆盖栅极的栅极绝缘层，在所述栅极绝缘层上形成对应于栅极上方的有源层，所述有源层为金属氧化物半导体材料；
在所述有源层与栅极绝缘层上形成源极与漏极，所述源极与漏极在所述有源层上限定出位于所述源极与漏极之间的沟道区、位于所述沟道区一侧且与所述源极相接触的源极接触区以及位于所述沟道区另一侧且与所述漏极相接触的漏极接触区；
在所述源极、漏极及有源层上沉积第一钝化层；
采用含氧元素的等离子体对所述第一钝化层表面进行处理，氧元素经由所述第一钝化层渗透至所述有源层的沟道区的浅表层，对沟道区的浅表层进行氧元素的补充，保证浅表层的氧元素平衡；
在所述第一钝化层上沉积第二钝化层；
在所述第一钝化层与第二钝化层上形成对应于所述源极上方的通孔；在所述第二钝化层上形成像素电极，所述像素电极经由所述通孔与所述源极相接触。
所述有源层的材料包括铟镓锌氧化物。
所述源极与漏极的材料包括金属铜。
所述源极与漏极的光刻制程中使用的蚀刻液为无氟元素的双氧水系铜蚀刻液。
所述浅表层的氧元素平衡指的是所述浅表层中的氧元素达到蚀刻源极和漏极之前的含量。
所述第一钝化层的材料为氧化硅，所述第一钝化层的厚度为
所述含氧元素的等离子体为一氧化二氮等离子体。
采用含氧元素的等离子体对所述第一钝化层表面进行处理的制程按照等离子体增强化学气相沉积的方式进行，通过控制等离子体增强化学气相沉积的功率和压力，保证仅有微量的氧元素经由所述第一钝化层渗透至所述有源层的沟道区的浅表层，实现浅表层的氧元素平衡即可。
所述第二钝化层的材料为氧化硅，所述第二钝化层的厚度为
所述像素电极的材料包括氧化铟锡。
本发明的有益效果：本发明提供一种背沟道蚀刻型氧化物半导体TFT基板的制作方法，通过先在源极、漏极及有源层上沉积第一钝化层，然后采用含氧元素的等离子体对所述第一钝化层表面进行处理，使微量的氧元素经由所述第一钝化层渗透至所述有源层的沟道区的浅表层，对沟道区的浅表层进行氧元素的补充，保证浅表层的氧元素平衡，并且在等离子处理过程中，所述第一钝化层起到源极和漏极的阻挡层的作用，这样仅有微量的氧元素能够到达源极和漏极，不足以对源极和漏极造成氧化，保证TFT的工作稳定性。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的背沟道蚀刻型氧化物半导体TFT基板的制作方法的流程图；
图2为本发明的背沟道蚀刻型氧化物半导体TFT基板的制作方法的步骤1的示意图；
图3为本发明的背沟道蚀刻型氧化物半导体TFT基板的制作方法的步骤2的示意图；
图4为本发明的背沟道蚀刻型氧化物半导体TFT基板的制作方法的步骤3的示意图；
图5为本发明的背沟道蚀刻型氧化物半导体TFT基板的制作方法的步骤4的示意图；
图6为本发明的背沟道蚀刻型氧化物半导体TFT基板的制作方法的步骤5的示意图；
图7为本发明的背沟道蚀刻型氧化物半导体TFT基板的制作方法的步骤6的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种背沟道蚀刻型氧化物半导体TFT基板的制作方法，包括如下步骤：
步骤1、如图2所示，提供衬底基板10，在所述衬底基板10上形成栅极20，在所述衬底基板10上形成覆盖栅极20的栅极绝缘层30，在所述栅极绝缘层30上形成对应于栅极20上方的有源层40，所述有源层40为金属氧化物半导体材料。
具体的，所述有源层40的材料包括铟镓锌氧化物(IGZO)。
步骤2、如图3所示，在所述有源层40与栅极绝缘层30上形成源极51与漏极52，所述源极51与漏极52在所述有源层40上限定出位于所述源极51与漏极52之间的沟道区41、位于所述沟道区41一侧且与所述源极51相接触的源极接触区42以及位于所述沟道区41另一侧且与所述漏极52相接触的漏极接触区43。
具体的，所述源极51与漏极52的材料包括金属铜，所述源极51与漏极52的光刻制程中使用的蚀刻液为无氟元素的双氧水系铜蚀刻液。虽然无氟元素的双氧水系铜蚀刻液对沟道区41的伤害较小，但是仍然会对沟道区41的浅表层415中的氧元素平衡造成破坏，使沟道区41的浅表层415中的氧元素含量降低，IGZO表面产生较多氧空位。
步骤3、如图4所示，在所述源极51、漏极52及有源层40上沉积第一钝化层61。
具体的，所述第一钝化层61的材料为氧化硅(SiOx)，所述第一钝化层61的厚度为
步骤4、如图5所示，采用含氧元素的等离子体对所述第一钝化层61表面进行处理，微量的氧元素经由所述第一钝化层61渗透至所述有源层40的沟道区41的浅表层415，对沟道区41的浅表层415进行氧元素的补充，保证浅表层415的氧元素平衡。
通过对沟道区41的浅表层415进行氧元素补充处理，可以改善IGZO的含氧量，减少IGZO表面的氧空位，补偿刻蚀源极51与漏极52时对沟道区41的IGZO的影响。
具体的，所述浅表层415的氧元素平衡指的是所述浅表层415中的氧元素达到蚀刻源极和漏极之前的含量。
具体的，所述含氧元素的等离子体为一氧化二氮(N2O)等离子体。
具体，采用含氧元素的等离子体对所述第一钝化层61表面进行处理的制程按照等离子体增强化学气相沉积(PECVD)的方式进行，通过控制等离子体增强化学气相沉积的功率和压力，保证仅有微量的氧元素经由所述第一钝化层61渗透至所述有源层40的沟道区41的浅表层415，实现浅表层415的氧元素平衡即可。
在等离子处理过程中，所述第一钝化层61起到源极51和漏极52的阻挡层的作用，这样仅有微量的氧元素能够到达源极51和漏极52，不足以对源极51和漏极52造成氧化。
在源极51和漏极52上方不设置阻挡层的情况下，含氧元素的等离子体会对源极51与漏极52的金属铜进行氧化，降低源极51与漏极52和其上方的钝化层之间的结合力，导致其上方的钝化层出现翘起和鼓泡，并且会影响后续制作的像素电极70和源极51与漏极52之间的电性接触。
步骤5、如图6所示，在所述第一钝化层61上沉积第二钝化层62。
具体的，所述第二钝化层62的材料为氧化硅(SiOx)，所述第二钝化层62的厚度为
步骤6、如图7所示，在所述第一钝化层61与第二钝化层62上形成对应于所述源极51上方的通孔65；在所述第二钝化层62上形成像素电极70，所述像素电极70经由所述通孔65与所述源极51相接触。
具体的，所述像素电极70的材料包括氧化铟锡(ITO)。
综上所述，本发明提供一种背沟道蚀刻型氧化物半导体TFT基板的制作方法，通过先在源极、漏极及有源层上沉积第一钝化层，然后采用含氧元素的等离子体对所述第一钝化层表面进行处理，使微量的氧元素经由所述第一钝化层渗透至所述有源层的沟道区的浅表层，对沟道区的浅表层进行氧元素的补充，保证浅表层的氧元素平衡，并且在等离子处理过程中，所述第一钝化层起到源极和漏极的阻挡层的作用，这样仅有微量的氧元素能够到达源极和漏极，不足以对源极和漏极造成氧化，保证TFT的工作稳定性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (8)
1.一种背沟道蚀刻型氧化物半导体TFT基板的制作方法，其特征在于，包括：
提供衬底基板(10)，在所述衬底基板(10)上形成栅极(20)，在所述衬底基板(10)上形成覆盖栅极(20)的栅极绝缘层(30)，在所述栅极绝缘层(30)上形成对应于栅极(20)上方的有源层(40)，所述有源层(40)为金属氧化物半导体材料；
在所述有源层(40)与栅极绝缘层(30)上形成源极(51)与漏极(52)，所述源极(51)与漏极(52)在所述有源层(40)上限定出位于所述源极(51)与漏极(52)之间的沟道区(41)、位于所述沟道区(41)一侧且与所述源极(51)相接触的源极接触区(42)以及位于所述沟道区(41)另一侧且与所述漏极(52)相接触的漏极接触区(43)；
在所述源极(51)、漏极(52)及有源层(40)上沉积第一钝化层(61)；
采用含氧元素的等离子体对所述第一钝化层(61)表面进行处理，氧元素经由所述第一钝化层(61)渗透至所述有源层(40)的沟道区(41)的浅表层(415)，对沟道区(41)的浅表层(415)进行氧元素的补充，保证浅表层(415)的氧元素平衡；
在所述第一钝化层(61)上沉积第二钝化层(62)；
在所述第一钝化层(61)与第二钝化层(62)上形成对应于所述源极(51)上方的通孔(65)；在所述第二钝化层(62)上形成像素电极(70)，所述像素电极(70)经由所述通孔(65)与所述源极(51)相接触；
采用含氧元素的等离子体对所述第一钝化层(61)表面进行处理的制程按照等离子体增强化学气相沉积的方式进行，通过控制等离子体增强化学气相沉积的功率和压力，保证仅有微量的氧元素经由所述第一钝化层(61)渗透至所述有源层(40)的沟道区(41)的浅表层(415)，实现浅表层(415)的氧元素平衡即可；
所述浅表层(415)的氧元素平衡指的是所述浅表层(415)中的氧元素达到蚀刻源极和漏极之前的含量。
2.如权利要求1所述的背沟道蚀刻型氧化物半导体TFT基板的制作方法，其特征在于，所述有源层(40)的材料包括铟镓锌氧化物。
3.如权利要求1所述的背沟道蚀刻型氧化物半导体TFT基板的制作方法，其特征在于，所述源极(51)与漏极(52)的材料包括金属铜。
4.如权利要求3所述的背沟道蚀刻型氧化物半导体TFT基板的制作方法，其特征在于，所述源极(51)与漏极(52)的光刻制程中使用的蚀刻液为无氟元素的双氧水系铜蚀刻液。
5.如权利要求1所述的背沟道蚀刻型氧化物半导体TFT基板的制作方法，其特征在于，所述第一钝化层(61)的材料为氧化硅，所述第一钝化层(61)的厚度为
6.如权利要求1所述的背沟道蚀刻型氧化物半导体TFT基板的制作方法，其特征在于，所述含氧元素的等离子体为一氧化二氮等离子体。
7.如权利要求1所述的背沟道蚀刻型氧化物半导体TFT基板的制作方法，其特征在于，所述第二钝化层(62)的材料为氧化硅，所述第二钝化层(62)的厚度为
8.如权利要求1所述的背沟道蚀刻型氧化物半导体TFT基板的制作方法，其特征在于，所述像素电极(70)的材料包括氧化铟锡。
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