JP6189182B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6189182B2
JP6189182B2 JP2013231888A JP2013231888A JP6189182B2 JP 6189182 B2 JP6189182 B2 JP 6189182B2 JP 2013231888 A JP2013231888 A JP 2013231888A JP 2013231888 A JP2013231888 A JP 2013231888A JP 6189182 B2 JP6189182 B2 JP 6189182B2
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film
oxide
transistor
oxide semiconductor
oxide film
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Japanese (ja)
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JP2014116588A5 (enExample
JP2014116588A (ja
Inventor
佐藤　貴洋
貴洋 佐藤
安孝 中澤
安孝 中澤
隆之 長
隆之 長
俊介 越岡
俊介 越岡
肇 徳永
肇 徳永
正美 神長
正美 神長
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • G02F1/1362—Active matrix addressed cells
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2013231888A 2012-11-16 2013-11-08 半導体装置 Active JP6189182B2 (ja)

Priority Applications (1)

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JP2013231888A JP6189182B2 (ja) 2012-11-16 2013-11-08 半導体装置

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JP2012251794 2012-11-16
JP2012251794 2012-11-16
JP2013231888A JP6189182B2 (ja) 2012-11-16 2013-11-08 半導体装置

Related Child Applications (3)

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JP2015000910A Division JP5948446B2 (ja) 2012-11-16 2015-01-06 半導体装置
JP2015096439A Division JP6082423B2 (ja) 2012-11-16 2015-05-11 半導体装置の作製方法及び表示装置の作製方法
JP2017018436A Division JP2017120920A (ja) 2012-11-16 2017-02-03 半導体装置

Publications (3)

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JP2014116588A JP2014116588A (ja) 2014-06-26
JP2014116588A5 JP2014116588A5 (enExample) 2016-12-01
JP6189182B2 true JP6189182B2 (ja) 2017-08-30

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JP2013231888A Active JP6189182B2 (ja) 2012-11-16 2013-11-08 半導体装置
JP2015000910A Active JP5948446B2 (ja) 2012-11-16 2015-01-06 半導体装置
JP2015096439A Active JP6082423B2 (ja) 2012-11-16 2015-05-11 半導体装置の作製方法及び表示装置の作製方法
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JP7285302B2 (ja) 2023-06-01
US20180053856A1 (en) 2018-02-22
TWI661553B (zh) 2019-06-01
CN113421929A (zh) 2021-09-21
US20150270404A1 (en) 2015-09-24
US10361318B2 (en) 2019-07-23
JP6595563B2 (ja) 2019-10-23
JP2022010399A (ja) 2022-01-14
KR20200047486A (ko) 2020-05-07
JP6982040B2 (ja) 2021-12-17
KR20170023054A (ko) 2017-03-02
CN110047937A (zh) 2019-07-23
JP2015216377A (ja) 2015-12-03
JP6082423B2 (ja) 2017-02-15
JP2020014011A (ja) 2020-01-23
KR20220116129A (ko) 2022-08-22
JP2018026598A (ja) 2018-02-15
KR20230038452A (ko) 2023-03-20
TW201735355A (zh) 2017-10-01
US9812583B2 (en) 2017-11-07
TWI613813B (zh) 2018-02-01
US20250159936A1 (en) 2025-05-15

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