KR102377866B1 - 아날로그 회로 및 반도체 장치 - Google Patents

아날로그 회로 및 반도체 장치 Download PDF

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Publication number
KR102377866B1
KR102377866B1 KR1020217005827A KR20217005827A KR102377866B1 KR 102377866 B1 KR102377866 B1 KR 102377866B1 KR 1020217005827 A KR1020217005827 A KR 1020217005827A KR 20217005827 A KR20217005827 A KR 20217005827A KR 102377866 B1 KR102377866 B1 KR 102377866B1
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layer
oxide semiconductor
insulating layer
oxide
film
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KR20210024251A (ko
Inventor
순페이 야마자키
준 고야마
아츠시 히로세
마사시 츠부쿠
코세이 노다
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020227008938A priority Critical patent/KR20220038542A/ko
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    • H01L27/1225—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H01L21/823412—
    • H01L29/06—
    • H01L29/7869—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0266—Details of the structure or mounting of specific components for a display module assembly
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Optical Filters (AREA)
  • Liquid Crystal (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Amplifiers (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal Display Device Control (AREA)
KR1020217005827A 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치 Active KR102377866B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227008938A KR20220038542A (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009242853 2009-10-21
JPJP-P-2009-242853 2009-10-21
PCT/JP2010/068100 WO2011049005A1 (en) 2009-10-21 2010-10-07 Analog circuit and semiconductor device
KR1020207027758A KR102223581B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치

Related Parent Applications (1)

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Publications (2)

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KR20210024251A KR20210024251A (ko) 2021-03-04
KR102377866B1 true KR102377866B1 (ko) 2022-03-22

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KR1020217005827A Active KR102377866B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020177029939A Active KR101893128B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020127012809A Active KR101789309B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020187024003A Active KR102023128B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020197026646A Active KR102162746B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020227008938A Ceased KR20220038542A (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020207027758A Active KR102223581B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치

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KR1020177029939A Active KR101893128B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020127012809A Active KR101789309B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020187024003A Active KR102023128B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020197026646A Active KR102162746B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020227008938A Ceased KR20220038542A (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치
KR1020207027758A Active KR102223581B1 (ko) 2009-10-21 2010-10-07 아날로그 회로 및 반도체 장치

Country Status (5)

Country Link
US (10) US8242837B2 (https=)
JP (12) JP5489946B2 (https=)
KR (7) KR102377866B1 (https=)
TW (3) TWI612677B (https=)
WO (1) WO2011049005A1 (https=)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5407638B2 (ja) * 2009-07-28 2014-02-05 セイコーエプソン株式会社 アクティブマトリクス基板、電気光学装置、及び電子機器
CN102598280B (zh) 2009-10-21 2016-05-18 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
WO2011055625A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
KR20120101716A (ko) * 2009-12-24 2012-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN102754022B (zh) * 2010-02-26 2016-11-09 株式会社半导体能源研究所 液晶显示装置
US8969132B2 (en) * 2010-09-20 2015-03-03 Nuvotronics, Llc Device package and methods for the fabrication thereof
JP5647860B2 (ja) * 2010-10-28 2015-01-07 富士フイルム株式会社 薄膜トランジスタおよびその製造方法
KR101793073B1 (ko) * 2010-12-06 2017-11-03 삼성디스플레이 주식회사 터치 스크린 패널
US9960278B2 (en) * 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
KR101919056B1 (ko) * 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 회로
US8709922B2 (en) * 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8946066B2 (en) * 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US8673426B2 (en) * 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8710615B2 (en) * 2011-08-31 2014-04-29 Infineon Technologies Ag Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI484626B (zh) * 2012-02-21 2015-05-11 璨圓光電股份有限公司 半導體發光元件及具有此半導體發光元件的發光裝置
KR20130125717A (ko) * 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR20130136063A (ko) * 2012-06-04 2013-12-12 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
TWI596778B (zh) * 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR20200019269A (ko) 2012-06-29 2020-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9337152B2 (en) 2013-03-15 2016-05-10 Nuvotronics, Inc Formulation for packaging an electronic device and assemblies made therefrom
KR102207563B1 (ko) * 2013-10-29 2021-01-27 삼성디스플레이 주식회사 유기 발광 표시장치 및 유기 발광 표시장치의 제조 방법
TWI527201B (zh) * 2013-11-06 2016-03-21 友達光電股份有限公司 畫素結構及其製造方法
TWI686899B (zh) * 2014-05-02 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、觸控感測器、顯示裝置
KR102333604B1 (ko) * 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US9653613B2 (en) * 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
CN108352358B (zh) 2015-10-13 2022-07-26 非结晶公司 非晶金属薄膜非线性电阻器
US10797113B2 (en) 2016-01-25 2020-10-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device with layered electrode structures
US10242244B2 (en) * 2016-01-27 2019-03-26 Japan Display Inc. Fingerprint detection device and display device
CN108573983B (zh) * 2017-03-13 2021-08-17 京东方科技集团股份有限公司 光学探测器及其制备方法、指纹识别传感器、显示装置
US10479732B2 (en) * 2017-03-31 2019-11-19 Tdk Corporation Oxynitride thin film and capacitance element
US10475586B2 (en) * 2017-03-31 2019-11-12 Tdk Corporation Oxynitride thin film and capacitance element
CN108987411A (zh) 2017-06-02 2018-12-11 京东方科技集团股份有限公司 阵列基板及其制备方法和显示装置
CN107731973B (zh) * 2017-10-30 2019-03-12 厦门乾照光电股份有限公司 一种led芯片及制作方法
CN108199774A (zh) * 2018-01-11 2018-06-22 中国电子科技集团公司第四十四研究所 一种基于红外led光纤的数据通信设备及其制造方法和通信方法
JP2021520060A (ja) 2018-03-30 2021-08-12 アモルフィックス・インコーポレイテッド アモルファス金属薄膜トランジスタ
CN108540600B (zh) * 2018-03-30 2020-09-18 Oppo广东移动通信有限公司 电子装置
CN110579525B (zh) 2018-06-08 2023-08-18 天马日本株式会社 传感器装置
US11935961B2 (en) * 2018-10-18 2024-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, and electronic device
KR102737478B1 (ko) 2018-12-07 2024-12-03 아모르픽스, 인크 다이오드 기반 디스플레이 백플레인 및 전자 디스플레이를 위한 방법 및 회로
CN109860265B (zh) * 2019-03-06 2021-10-01 京东方科技集团股份有限公司 一种基板及其制备方法、显示面板、显示装置
TWI705412B (zh) * 2019-03-22 2020-09-21 台灣奈米碳素股份有限公司 基於氣體評價食材風味的系統及方法
US10777153B1 (en) * 2019-05-16 2020-09-15 Himax Display, Inc. Method for calculating pixel voltage for liquid crystal on silicon display device
WO2021025013A1 (ja) 2019-08-07 2021-02-11 昭和電工株式会社 油中水型乳化組成物
JP2021026187A (ja) * 2019-08-08 2021-02-22 株式会社ジャパンディスプレイ 表示装置
CN110600488B (zh) * 2019-10-12 2025-03-28 京东方科技集团股份有限公司 一种氧化物薄膜晶体管及其驱动方法、显示装置
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
KR102859780B1 (ko) * 2019-12-10 2025-09-15 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
KR102945440B1 (ko) * 2020-03-06 2026-03-31 삼성디스플레이 주식회사 표시 장치
CN111430386B (zh) * 2020-04-01 2023-11-10 京东方科技集团股份有限公司 光电探测器、显示基板及光电探测器的制作方法
CN115606010B (zh) * 2020-06-11 2025-07-15 苏州晶湛半导体有限公司 半导体结构及其制作方法
JP7803887B2 (ja) 2020-06-12 2026-01-21 アモルフィックス・インコーポレイテッド 電子デバイスのための非線形構成要素を含む回路
CN111883063B (zh) * 2020-07-17 2021-11-12 合肥维信诺科技有限公司 像素电路、显示面板及显示装置
US11349304B2 (en) * 2020-10-28 2022-05-31 Globalfoundries U.S. Inc. Structure and method for controlling electrostatic discharge (ESD) event in resistor-capacitor circuit
CN119545988A (zh) * 2021-02-03 2025-02-28 厦门三安光电有限公司 微型发光二极管和显示面板
CN116235335A (zh) 2021-02-23 2023-06-06 株式会社Lg新能源 具有减少的气体产生量的牺牲正极材料及其制备方法
US11900859B2 (en) * 2021-05-21 2024-02-13 Lumileds Llc Active matrix hybrid microLED display
CN113484703B (zh) * 2021-06-25 2022-08-12 成都飞机工业（集团）有限责任公司 一种空气式静电放电的测试方法及测试设备
CN117074890A (zh) * 2022-05-09 2023-11-17 星科金朋私人有限公司 测试半导体器件的方法和装置
US12561033B2 (en) 2024-07-08 2026-02-24 Apple Inc. Capacitive touch sensing with reduced ambient light interference

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006313363A (ja) * 2006-05-24 2006-11-16 Semiconductor Energy Lab Co Ltd 表示装置
JP2008276212A (ja) 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置

Family Cites Families (237)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
DE68901666T2 (de) 1988-03-15 1993-02-11 Aleados Del Cobres S A Alecosa Waermebehaelter fuer fluessigkeiten, fette produkte, gele und aehnliches.
JPH0229543U (https=) * 1988-08-15 1990-02-26
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3156522B2 (ja) * 1994-09-22 2001-04-16 凸版印刷株式会社 液晶表示装置用駆動回路
JPH08179376A (ja) * 1994-12-22 1996-07-12 Sony Corp カラー表示装置
JP2768321B2 (ja) * 1995-02-28 1998-06-25 日本電気株式会社 半導体記憶装置
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
WO1997006554A2 (en) * 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP3145931B2 (ja) * 1996-08-26 2001-03-12 日本電気株式会社 薄膜トランジスタ
JP3264364B2 (ja) 1997-01-21 2002-03-11 シャープ株式会社 液晶表示装置の製造方法
JP3702096B2 (ja) 1998-06-08 2005-10-05 三洋電機株式会社 薄膜トランジスタ及び表示装置
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) * 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US7379039B2 (en) 1999-07-14 2008-05-27 Sony Corporation Current drive circuit and display device using same pixel circuit, and drive method
JP4126909B2 (ja) 1999-07-14 2008-07-30 ソニー株式会社 電流駆動回路及びそれを用いた表示装置、画素回路、並びに駆動方法
TW460731B (en) * 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
WO2001067824A1 (en) * 2000-03-07 2001-09-13 Idemitsu Kosan Co., Ltd. Active-drive organic el display and method for manufacturing the same
TW513753B (en) 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP4318455B2 (ja) 2000-10-12 2009-08-26 三洋電機株式会社 カラーフィルタ形成方法または発光素子層形成方法またはこれらを利用したカラー表示装置の製造方法またはカラー表示装置
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US7071771B2 (en) * 2000-12-11 2006-07-04 Kabushiki Kaisha Toshiba Current difference divider circuit
JP4212815B2 (ja) * 2001-02-21 2009-01-21 株式会社半導体エネルギー研究所 発光装置
US6753654B2 (en) 2001-02-21 2004-06-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
JP3997731B2 (ja) * 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
JP2005322935A (ja) 2001-06-01 2005-11-17 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4202069B2 (ja) * 2001-08-10 2008-12-24 株式会社半導体エネルギー研究所 半導体装置及び表示装置
US6876350B2 (en) 2001-08-10 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic equipment using the same
JP3813555B2 (ja) 2001-08-29 2006-08-23 株式会社半導体エネルギー研究所 発光装置及び電子機器
CN100371962C (zh) 2001-08-29 2008-02-27 株式会社半导体能源研究所 发光器件、发光器件驱动方法、以及电子设备
JP4090716B2 (ja) * 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP3655859B2 (ja) 2001-09-26 2005-06-02 東芝マイクロエレクトロニクス株式会社 定電流回路
JP2003108070A (ja) * 2001-09-28 2003-04-11 Sanyo Electric Co Ltd 表示装置
US7193619B2 (en) 2001-10-31 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP2003150105A (ja) * 2001-11-09 2003-05-23 Sanyo Electric Co Ltd 表示装置
CN1278297C (zh) 2001-11-09 2006-10-04 三洋电机株式会社 对光学元件的亮度数据具有初始化功能的显示器
JP4718761B2 (ja) * 2002-02-13 2011-07-06 株式会社半導体エネルギー研究所 発光装置の作製方法
US6933520B2 (en) 2002-02-13 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4083486B2 (ja) * 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
WO2003075256A1 (en) 2002-03-05 2003-09-12 Nec Corporation Image display and its control method
JP3613253B2 (ja) * 2002-03-14 2005-01-26 日本電気株式会社 電流制御素子の駆動回路及び画像表示装置
JP4069648B2 (ja) 2002-03-15 2008-04-02 カシオ計算機株式会社 半導体装置および表示駆動装置
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) * 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP4723787B2 (ja) * 2002-07-09 2011-07-13 シャープ株式会社 電界効果型トランジスタ、その製造方法及び画像表示装置
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP3702879B2 (ja) 2003-02-21 2005-10-05 セイコーエプソン株式会社 電気光学パネル、その駆動回路及び駆動方法、並びに電子機器
JP4461687B2 (ja) * 2003-02-21 2010-05-12 セイコーエプソン株式会社 電気光学パネル、その駆動回路及び駆動方法、並びに電子機器
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
KR100742063B1 (ko) 2003-05-26 2007-07-23 가시오게산키 가부시키가이샤 전류생성공급회로 및 표시장치
JP4019321B2 (ja) * 2003-06-04 2007-12-12 カシオ計算機株式会社 電流生成供給回路
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
TWI228384B (en) * 2003-06-26 2005-02-21 Ind Tech Res Inst Active matrix organic light emitting diode
KR20050005610A (ko) * 2003-07-05 2005-01-14 권태인 수신단계에서 광고 등이 삽입되는 방송서비스시스템
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US8937580B2 (en) 2003-08-08 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and light emitting device
JP2005084416A (ja) * 2003-09-09 2005-03-31 Sharp Corp アクティブマトリクス基板およびそれを用いた表示装置
CA2443206A1 (en) 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
WO2005029456A1 (en) 2003-09-23 2005-03-31 Ignis Innovation Inc. Circuit and method for driving an array of light emitting pixels
JP4528101B2 (ja) * 2003-11-26 2010-08-18 ローム株式会社 Ｄ／ａ変換回路、有機ｅｌ駆動回路および有機ｅｌ表示装置
TWI250823B (en) * 2003-11-26 2006-03-01 Rohm Co Ltd D/A converter circuit, organic EL drive circuit and organic EL display device
JP4295075B2 (ja) * 2003-12-05 2009-07-15 日本電信電話株式会社 光・電気変換回路および電界検出光学装置
JP4884674B2 (ja) * 2004-01-16 2012-02-29 株式会社半導体エネルギー研究所 表示装置の作製方法
US7825021B2 (en) 2004-01-16 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
KR100708644B1 (ko) 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
US7381579B2 (en) 2004-02-26 2008-06-03 Samsung Sdi Co., Ltd. Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
KR20070116888A (ko) * 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7692378B2 (en) 2004-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device including an insulating layer with an opening
JP5222455B2 (ja) * 2004-04-28 2013-06-26 株式会社半導体エネルギー研究所 表示装置
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006005116A (ja) 2004-06-17 2006-01-05 Casio Comput Co Ltd 膜形成方法、半導体膜、及び積層絶縁膜
TWI382079B (zh) 2004-07-30 2013-01-11 Sanyo Electric Co 有機電場發光元件及有機電場發光顯示裝置
JP4315874B2 (ja) * 2004-07-30 2009-08-19 三洋電機株式会社 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
EP1624333B1 (en) * 2004-08-03 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method thereof, and television set
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) * 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
EP2453481B1 (en) * 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
CA2585063C (en) * 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
JP5118810B2 (ja) 2004-11-10 2013-01-16 キヤノン株式会社 電界効果型トランジスタ
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
BRPI0517560B8 (pt) * 2004-11-10 2018-12-11 Canon Kk transistor de efeito de campo
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
CA2504571A1 (en) 2005-04-12 2006-10-12 Ignis Innovation Inc. A fast method for compensation of non-uniformities in oled displays
US9275579B2 (en) 2004-12-15 2016-03-01 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9280933B2 (en) 2004-12-15 2016-03-08 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US10013907B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
TWI402790B (zh) 2004-12-15 2013-07-21 Ignis Innovation Inc 用以程式化，校準及驅動一發光元件顯示器的方法及系統
US9799246B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US8576217B2 (en) 2011-05-20 2013-11-05 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9171500B2 (en) 2011-05-20 2015-10-27 Ignis Innovation Inc. System and methods for extraction of parasitic parameters in AMOLED displays
US8599191B2 (en) 2011-05-20 2013-12-03 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US20140111567A1 (en) 2005-04-12 2014-04-24 Ignis Innovation Inc. System and method for compensation of non-uniformities in light emitting device displays
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7608531B2 (en) * 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) * 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) * 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
KR20070122536A (ko) 2005-04-11 2007-12-31 에프씨아이 전기 커넥터용 그로밋 및 이러한 그로밋을 포함하는 전기커넥터
JP4999351B2 (ja) 2005-04-20 2012-08-15 株式会社半導体エネルギー研究所 半導体装置及び表示装置
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
DE602006001686D1 (de) 2005-05-23 2008-08-21 Semiconductor Energy Lab Photoelektrische Umwandleranordnung und Verfahren zu ihrer Herstellung
JP2006344849A (ja) * 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
JP2007036006A (ja) 2005-07-28 2007-02-08 Hitachi Ltd 有機薄膜トランジスタ及びその製造方法
KR100711890B1 (ko) * 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) * 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP2007063966A (ja) 2005-08-29 2007-03-15 Minoru Yamada 在宅自立・介護住宅づくりと地域介護サービス拠点づくりによる総括サービスを実施運営システム。
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) * 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4732080B2 (ja) 2005-09-06 2011-07-27 キヤノン株式会社 発光素子
JP4850457B2 (ja) * 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
CN101258607B (zh) 2005-09-06 2011-01-05 佳能株式会社 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5064747B2 (ja) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP1935027B1 (en) 2005-10-14 2017-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5427340B2 (ja) 2005-10-14 2014-02-26 株式会社半導体エネルギー研究所 半導体装置
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR20090115222A (ko) * 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US7998372B2 (en) 2005-11-18 2011-08-16 Idemitsu Kosan Co., Ltd. Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel
US20090090914A1 (en) 2005-11-18 2009-04-09 Koki Yano Semiconductor thin film, method for producing the same, and thin film transistor
JP5376750B2 (ja) * 2005-11-18 2013-12-25 出光興産株式会社 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル
US8263977B2 (en) 2005-12-02 2012-09-11 Idemitsu Kosan Co., Ltd. TFT substrate and TFT substrate manufacturing method
JP5111758B2 (ja) * 2005-12-19 2013-01-09 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) * 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP2007250982A (ja) 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
TW200736786A (en) 2006-03-31 2007-10-01 Prime View Int Co Ltd Thin film transistor array substrate and electronic ink display device
KR20070101595A (ko) * 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
KR101315282B1 (ko) 2006-04-27 2013-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 전자기기
JP4750070B2 (ja) * 2006-04-27 2011-08-17 株式会社半導体エネルギー研究所 半導体装置及びそれを用いた電子機器
US20070252928A1 (en) * 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
TWI839708B (zh) * 2006-05-16 2024-04-21 日商半導體能源研究所股份有限公司 液晶顯示裝置
JP4240059B2 (ja) 2006-05-22 2009-03-18 ソニー株式会社 表示装置及びその駆動方法
JP4494369B2 (ja) * 2006-05-24 2010-06-30 株式会社半導体エネルギー研究所 液晶表示装置
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
KR101245218B1 (ko) 2006-06-22 2013-03-19 엘지디스플레이 주식회사 유기발광다이오드 표시소자
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP2008059824A (ja) * 2006-08-30 2008-03-13 Fuji Electric Holdings Co Ltd アクティブマトリックス型有機ｅｌパネルおよびその製造方法
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN1941229A (zh) 2006-09-11 2007-04-04 深圳冀正鑫电子有限公司 一种变压器
JP4332545B2 (ja) * 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) * 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) * 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
KR101293561B1 (ko) * 2006-10-11 2013-08-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5371143B2 (ja) * 2006-10-12 2013-12-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101414125B1 (ko) 2006-10-12 2014-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조 방법 및 에칭장치
US7772021B2 (en) * 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
US20090271087A1 (en) 2006-11-29 2009-10-29 Yutaka Motonaga Control device and engine control device
JP2008140684A (ja) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
WO2008069255A1 (en) 2006-12-05 2008-06-12 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
JP5305630B2 (ja) 2006-12-05 2013-10-02 キヤノン株式会社 ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法
US8143115B2 (en) 2006-12-05 2012-03-27 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
US8514165B2 (en) * 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101303578B1 (ko) * 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
JP4600780B2 (ja) 2007-01-15 2010-12-15 ソニー株式会社 表示装置及びその駆動方法
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP2009031742A (ja) 2007-04-10 2009-02-12 Fujifilm Corp 有機電界発光表示装置
US7795613B2 (en) * 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) * 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) * 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) * 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
JP2008270061A (ja) 2007-04-24 2008-11-06 Canon Inc 表示装置
CN101663762B (zh) * 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
US7851804B2 (en) * 2007-05-17 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP2008298970A (ja) * 2007-05-30 2008-12-11 Canon Inc 有機ｅｌ画素回路及びその駆動方法
US7910932B2 (en) * 2007-06-01 2011-03-22 Northwestern University Transparent nanowire transistors and methods for fabricating same
KR101376073B1 (ko) * 2007-06-14 2014-03-21 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 어레이 기판 및 이의 제조방법
KR101415561B1 (ko) * 2007-06-14 2014-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
JP2009009049A (ja) * 2007-06-29 2009-01-15 Canon Inc アクティブマトリクス型有機ｅｌディスプレイ及びその階調制御方法
KR20090002841A (ko) 2007-07-04 2009-01-09 삼성전자주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 그 제조방법
JP2009016287A (ja) * 2007-07-09 2009-01-22 Seiko Epson Corp 有機ｅｌ装置の製造方法、及び有機ｅｌ装置の製造装置
JP5414161B2 (ja) 2007-08-10 2014-02-12 キヤノン株式会社 薄膜トランジスタ回路、発光表示装置と及びそれらの駆動方法
JP2009128503A (ja) 2007-11-21 2009-06-11 Canon Inc 薄膜トランジスタ回路とその駆動方法、ならびに発光表示装置
CN103258857B (zh) 2007-12-13 2016-05-11 出光兴产株式会社 使用了氧化物半导体的场效应晶体管及其制造方法
JP5215158B2 (ja) * 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
KR100936874B1 (ko) 2007-12-18 2010-01-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를구비하는 유기전계발광 표시 장치의 제조 방법
JP5219529B2 (ja) 2008-01-23 2013-06-26 キヤノン株式会社 電界効果型トランジスタ及び、該電界効果型トランジスタを備えた表示装置
JP2009206508A (ja) 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
JP2009207041A (ja) 2008-02-29 2009-09-10 Seiko Epson Corp 電気回路、電気光学装置、電子機器、および電気回路の制御方法
US7786485B2 (en) 2008-02-29 2010-08-31 Semicondutor Energy Laboratory Co., Ltd. Thin-film transistor and display device
JP5467728B2 (ja) 2008-03-14 2014-04-09 富士フイルム株式会社 薄膜電界効果型トランジスタおよびその製造方法
JP5325446B2 (ja) 2008-04-16 2013-10-23 株式会社日立製作所 半導体装置及びその製造方法
US8124922B2 (en) * 2008-05-21 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device including photoelectric conversion element and amplifier circuit having a thin film transistor
US8053717B2 (en) * 2008-05-22 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device having a reference voltage generation circuit with a resistor and a second diode element and electronic device having the same
EP2151811A3 (en) 2008-08-08 2010-07-21 Semiconductor Energy Laboratory Co, Ltd. Display device and electronic device
KR101722913B1 (ko) 2008-09-12 2017-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP4623179B2 (ja) * 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) * 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
CN105845083B (zh) 2010-11-15 2018-09-04 伊格尼斯创新公司 用于发光器件显示器中的不均匀性的补偿的系统和方法
US9530349B2 (en) 2011-05-20 2016-12-27 Ignis Innovations Inc. Charged-based compensation and parameter extraction in AMOLED displays
KR102238682B1 (ko) * 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
WO2014141156A1 (en) 2013-03-15 2014-09-18 Ignis Innovation Inc. System and methods for extraction of parameters in amoled displays
CN105960670B (zh) 2013-12-05 2017-11-10 伊格尼斯创新公司 像素电路和提取电路参数并提供像素内补偿的方法
WO2015092661A1 (en) 2013-12-20 2015-06-25 Ignis Innovation Inc. System and method for compensation of non-uniformities in light emitting device displays

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006313363A (ja) * 2006-05-24 2006-11-16 Semiconductor Energy Lab Co Ltd 表示装置
JP2008276212A (ja) 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置

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