JP5222455B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP5222455B2 JP5222455B2 JP2005118545A JP2005118545A JP5222455B2 JP 5222455 B2 JP5222455 B2 JP 5222455B2 JP 2005118545 A JP2005118545 A JP 2005118545A JP 2005118545 A JP2005118545 A JP 2005118545A JP 5222455 B2 JP5222455 B2 JP 5222455B2
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 37
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 239000011347 resin Substances 0.000 description 26
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910010272 inorganic material Inorganic materials 0.000 description 22
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- 229910017052 cobalt Inorganic materials 0.000 description 19
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- 229910052750 molybdenum Inorganic materials 0.000 description 2
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 239000011733 molybdenum Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
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- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Description
(実施の形態1)
また、第2の絶縁膜13は、有機材料を主成分として構成され、遮光性を有している。第2の絶縁膜13に用いる遮光性を有する膜は、振とう機や超音波振動器等を用いて、アクリル、ポリイミドなどの有機樹脂材料やシロキサンなどの有機材料に、カーボンや、遮光性を有する金属の粒子を添加して撹拌した後、必要に応じて濾過を行い、その後、スピンコート法で形成する。なお、本明細書においてシロキサンは、シリコンと酸素との結合で骨格構造が構成され、置換基として、少なくとも水素を含む有機基(例えばアルキル基や芳香族炭化水素など)を有する。また、置換基としてさらにフルオロ基を有していてもよい。また、有機材料にカーボンや金属粒子を添加する際は、均一に混合されるように、界面活性剤や分散剤などを添加してもよい。また、カーボンを添加する際は、カーボン粒子の濃度が重量パーセントで5〜15%となるように、その添加量を調節するとよい。また、スピンコート法で形成した後の薄膜をそのまま用いてもよいが、硬化を目的とした焼成を行ってもよい。成膜された薄膜の透過率と反射率は、共に0%、又はほぼ0%に近い値となる。
なお、第1の開口部のみに第3の絶縁膜14を形成する場合には、第2及び第3の絶縁膜によって形成される絶縁膜の表面が平坦性を有するように、別途平坦化処理を行っても良い。
なお、画素電極19と、電界発光層20との間に、珪素、酸化珪素、窒化珪素等のバリア層を挟持させてもよい。これにより、発光効率が上昇する。一方、対向電極21は、反射性を有し、仕事関数の小さい材料を用いるのがよい。例えば、Ca、Al、CaF、MgAg、AlLi等を用いることができる。
一方、トランジスタ側(画素電極側)から見て、陰極が先に来る場合には、逆積みと呼ばれ、画素電極19は陰極(電子注入電極ともいう)として機能する。
(実施の形態2)
なお、接続フィルム407を設ける位置は上記構成に限定されず、例えば、図13に示すように、透光性又は遮光性を有する絶縁膜上に形成しても良い。この際、接続フィルム407と素子群410とは、接続配線24及びソース/ドレイン配線18を介して接続される。なお、本実施例は、上記実施の形態及び他の実施例と自由に組み合わせることができる。
また、印刷法によりIDカードに顔写真を転写していた場合、偽造により、比較的容易に顔写真のすり替えを行うことができるが、本発明の場合は、顔写真のすり替えを容易に行うことができない。従って、偽造を防止してセキュリティ性を確保し、また、顔写真以外の画像を表示することができるために、高付加価値化、多機能化を実現する。なお、本実施例は、上記実施の形態及び他の実施例と自由に組み合わせることができる。
11 トランジスタ
12 第1の絶縁膜
13 第2の絶縁膜
14 第3の絶縁膜
15 ソース/ドレイン領域
16 ソース/ドレイン領域
17 ソース/ドレイン配線
18 ソース/ドレイン配線
19 画素電極
20 電界発光層
21 対向電極
22 発光素子
27 下地絶縁膜
28 ゲート絶縁膜
31 遮光性を有する絶縁膜
310 画素
311 トランジスタ
312 トランジスタ
313 発光素子
316 容量素子
317 第1の電源
318 第2の電源
319 画素電極
320 基板
332 隔壁層
337 幅
338 幅
340 トランジスタ
341 トランジスタ
342 トランジスタ
343 電源
400 表示領域
401 ゲートドライバ
402 ゲートドライバ
403 ソースドライバ
405 基板
406 対向基板
407 接続フィルム
408 シール材
410 素子群
412 トランジスタ
413 発光素子
414 容量素子
Claims (2)
- 基板上に設けられたトランジスタと、
前記トランジスタ上に設けられた遮光性を有する第1の絶縁膜と、
前記第1の絶縁膜に接して設けられた顔料を含み透光性を有する第2の絶縁膜と、
前記第2の絶縁膜上に設けられた発光素子とを有し、
前記第1の絶縁膜には、前記発光素子からの光を通過させる開口部が設けられ、
前記第2の絶縁膜は、前記開口部を埋めるように設けられていることを特徴とする表示装置。 - 請求項1において、
前記顔料は、赤、緑、又は青色を呈することを特徴とする表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005118545A JP5222455B2 (ja) | 2004-04-28 | 2005-04-15 | 表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004134753 | 2004-04-28 | ||
JP2004134753 | 2004-04-28 | ||
JP2005118545A JP5222455B2 (ja) | 2004-04-28 | 2005-04-15 | 表示装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012141648A Division JP2012226363A (ja) | 2004-04-28 | 2012-06-25 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005338796A JP2005338796A (ja) | 2005-12-08 |
JP5222455B2 true JP5222455B2 (ja) | 2013-06-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005118545A Expired - Fee Related JP5222455B2 (ja) | 2004-04-28 | 2005-04-15 | 表示装置 |
Country Status (1)
Country | Link |
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JP (1) | JP5222455B2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8148895B2 (en) | 2004-10-01 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
US8633919B2 (en) * | 2005-04-14 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method of the display device, and electronic device |
KR101324756B1 (ko) | 2005-10-18 | 2013-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그의 구동방법 |
KR101238721B1 (ko) | 2006-01-07 | 2013-03-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 제조방법 |
JP4822437B2 (ja) * | 2006-01-07 | 2011-11-24 | 株式会社半導体エネルギー研究所 | 表示装置およびその作製方法 |
JP5021937B2 (ja) * | 2006-01-26 | 2012-09-12 | Necネットワーク・センサ株式会社 | 立体表示装置 |
TWI430234B (zh) * | 2006-04-05 | 2014-03-11 | Semiconductor Energy Lab | 半導體裝置,顯示裝置,和電子裝置 |
JP2008059824A (ja) * | 2006-08-30 | 2008-03-13 | Fuji Electric Holdings Co Ltd | アクティブマトリックス型有機elパネルおよびその製造方法 |
KR101304413B1 (ko) | 2006-10-25 | 2013-09-10 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
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JP2001125510A (ja) * | 1995-11-17 | 2001-05-11 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型el表示装置 |
JP3830238B2 (ja) * | 1997-08-29 | 2006-10-04 | セイコーエプソン株式会社 | アクティブマトリクス型装置 |
JP2000100560A (ja) * | 1998-09-21 | 2000-04-07 | Matsushita Electric Ind Co Ltd | 発光装置 |
JP2002108250A (ja) * | 2000-09-29 | 2002-04-10 | Sharp Corp | アクティブマトリックス駆動型自発光表示装置及びその製造方法 |
JP2003109748A (ja) * | 2001-09-27 | 2003-04-11 | Sanyo Shinku Kogyo Kk | 電子デバイス、又は有機el素子用プラスチック基板の製造方法、及び該方法により構成された電子デバイス、又は有機el素子用プラスチック基板、又は有機el素子 |
CN1643560A (zh) * | 2002-03-13 | 2005-07-20 | 皇家飞利浦电子股份有限公司 | 双面显示装置 |
JP4060802B2 (ja) * | 2002-03-15 | 2008-03-12 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子用材料及びそれを用いた有機エレクトロルミネッセンス素子 |
JP2003332070A (ja) * | 2002-05-16 | 2003-11-21 | Seiko Epson Corp | 電気光学装置およびその製造方法、ならびに電子機器 |
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