KR102202281B1 - 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 - Google Patents

고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 Download PDF

Info

Publication number
KR102202281B1
KR102202281B1 KR1020197038554A KR20197038554A KR102202281B1 KR 102202281 B1 KR102202281 B1 KR 102202281B1 KR 1020197038554 A KR1020197038554 A KR 1020197038554A KR 20197038554 A KR20197038554 A KR 20197038554A KR 102202281 B1 KR102202281 B1 KR 102202281B1
Authority
KR
South Korea
Prior art keywords
imaging device
state imaging
solid
film
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020197038554A
Other languages
English (en)
Korean (ko)
Other versions
KR20200001615A (ko
Inventor
타케시 야나기타
이타루 오시야마
타카유키 에노모토
하루미 이케다
신이치로 이자와
아츠히코 야먀모토
카즈노부 오타
Original Assignee
소니 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 주식회사 filed Critical 소니 주식회사
Publication of KR20200001615A publication Critical patent/KR20200001615A/ko
Application granted granted Critical
Publication of KR102202281B1 publication Critical patent/KR102202281B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/807Pixel isolation structures
    • H01L27/1463
    • H01L27/1462
    • H01L27/14623
    • H01L27/14636
    • H01L27/14641
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/199Back-illuminated image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033Photosensitive area
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8057Optical shielding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/813Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8067Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020197038554A 2011-03-02 2012-02-23 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 Active KR102202281B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011045269 2011-03-02
JPJP-P-2011-045269 2011-03-02
JP2012011405 2012-01-23
JPJP-P-2012-011405 2012-01-23
PCT/JP2012/054390 WO2012117931A1 (ja) 2011-03-02 2012-02-23 固体撮像装置、固体撮像装置の製造方法及び電子機器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020187026037A Division KR102065291B1 (ko) 2011-03-02 2012-02-23 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기

Publications (2)

Publication Number Publication Date
KR20200001615A KR20200001615A (ko) 2020-01-06
KR102202281B1 true KR102202281B1 (ko) 2021-01-12

Family

ID=46757868

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020197038554A Active KR102202281B1 (ko) 2011-03-02 2012-02-23 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기
KR1020177015983A Ceased KR20170070266A (ko) 2011-03-02 2012-02-23 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기
KR1020137021456A Ceased KR20140015326A (ko) 2011-03-02 2012-02-23 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기
KR1020187026037A Active KR102065291B1 (ko) 2011-03-02 2012-02-23 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020177015983A Ceased KR20170070266A (ko) 2011-03-02 2012-02-23 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기
KR1020137021456A Ceased KR20140015326A (ko) 2011-03-02 2012-02-23 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기
KR1020187026037A Active KR102065291B1 (ko) 2011-03-02 2012-02-23 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기

Country Status (5)

Country Link
US (7) US9502450B2 (https=)
JP (4) JP6299058B2 (https=)
KR (4) KR102202281B1 (https=)
CN (4) CN103403869B (https=)
WO (1) WO2012117931A1 (https=)

Families Citing this family (225)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2502098B2 (ja) * 1987-08-12 1996-05-29 株式会社フジクラ 超電導電磁シ−ルド体
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク. 生体撮像装置および関連方法
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP2014096490A (ja) * 2012-11-09 2014-05-22 Sony Corp 撮像素子、製造方法
CN105074928B (zh) * 2013-03-29 2019-05-10 索尼公司 图像拾取元件和图像拾取装置
JP2014220403A (ja) * 2013-05-09 2014-11-20 浜松ホトニクス株式会社 半導体エネルギー線検出素子及び半導体エネルギー線検出素子の製造方法
JP6130221B2 (ja) * 2013-05-24 2017-05-17 ソニー株式会社 固体撮像装置、および電子機器
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
JP6303803B2 (ja) * 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
JP6641605B2 (ja) * 2013-07-03 2020-02-05 ソニー株式会社 固体撮像装置およびその製造方法
JP6060851B2 (ja) * 2013-08-09 2017-01-18 ソニー株式会社 固体撮像装置の製造方法
JP6079502B2 (ja) * 2013-08-19 2017-02-15 ソニー株式会社 固体撮像素子および電子機器
JP6170379B2 (ja) * 2013-08-30 2017-07-26 浜松ホトニクス株式会社 半導体エネルギー線検出素子
JP6465545B2 (ja) 2013-09-27 2019-02-06 ソニー株式会社 撮像素子およびその製造方法ならびに電子機器
JP6242211B2 (ja) * 2013-12-26 2017-12-06 キヤノン株式会社 撮像装置および撮像システム
KR102209097B1 (ko) * 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US9293490B2 (en) * 2014-03-14 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation with air-gap in backside illumination image sensor chips
KR102380829B1 (ko) * 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102268712B1 (ko) 2014-06-23 2021-06-28 삼성전자주식회사 자동 초점 이미지 센서 및 이를 포함하는 디지털 영상 처리 장치
JP6576025B2 (ja) * 2014-09-29 2019-09-18 キヤノン株式会社 光電変換装置、及び撮像システム
KR102336665B1 (ko) 2014-10-02 2021-12-07 삼성전자 주식회사 데드존을 줄이는 씨모스 이미지 센서
US9825078B2 (en) * 2014-11-13 2017-11-21 Visera Technologies Company Limited Camera device having an image sensor comprising a conductive layer and a reflection layer stacked together to form a light pipe structure accommodating a filter unit
JP2016100347A (ja) * 2014-11-18 2016-05-30 ソニー株式会社 固体撮像装置及びその製造方法、並びに電子機器
KR102410019B1 (ko) * 2015-01-08 2022-06-16 삼성전자주식회사 이미지 센서
KR102384890B1 (ko) * 2015-01-13 2022-04-11 삼성전자주식회사 이미지 센서 및 그 형성 방법
US10008530B2 (en) * 2015-01-30 2018-06-26 Taiwan Semiconductor Manufacturing Company Ltd. Image sensing device and manufacturing method thereof
WO2016141388A1 (en) * 2015-03-05 2016-09-09 Dartmouth College Gateless reset for image sensor pixels
CN107431076B (zh) * 2015-03-09 2021-05-14 索尼半导体解决方案公司 成像元件及其制造方法和电子设备
US9991303B2 (en) * 2015-03-16 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device structure
CN114744001A (zh) 2015-03-31 2022-07-12 索尼半导体解决方案公司 半导体装置
JP6856974B2 (ja) * 2015-03-31 2021-04-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
CN104867950B (zh) * 2015-04-07 2018-10-12 联想(北京)有限公司 感光元件及其制备方法
US9799654B2 (en) 2015-06-18 2017-10-24 International Business Machines Corporation FET trench dipole formation
KR102497812B1 (ko) * 2015-08-10 2023-02-09 삼성전자주식회사 이미지 센서
KR102435031B1 (ko) 2015-08-11 2022-08-22 삼성전자주식회사 고정 전하막을 갖는 이미지 센서
KR102460175B1 (ko) * 2015-08-21 2022-10-28 삼성전자주식회사 쉐어드 픽셀 및 이를 포함하는 이미지 센서
WO2017057277A1 (ja) * 2015-09-30 2017-04-06 株式会社ニコン 撮像素子および撮像装置
JP6754157B2 (ja) 2015-10-26 2020-09-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US9954022B2 (en) * 2015-10-27 2018-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Extra doped region for back-side deep trench isolation
US9620548B1 (en) * 2015-10-30 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with wide contact
FR3043250A1 (fr) 2015-10-30 2017-05-05 St Microelectronics Crolles 2 Sas Capteur d'image
JP6816014B2 (ja) * 2015-11-18 2021-01-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、製造方法、および電子機器
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
US9875989B2 (en) * 2016-01-12 2018-01-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure
KR102541701B1 (ko) 2016-01-15 2023-06-13 삼성전자주식회사 씨모스 이미지 센서
JP6700811B2 (ja) * 2016-01-26 2020-05-27 キヤノン株式会社 半導体装置および半導体装置の製造方法
TWI841030B (zh) * 2016-01-27 2024-05-01 日商新力股份有限公司 固體攝像元件及電子機器
JP2017168566A (ja) 2016-03-15 2017-09-21 ソニー株式会社 固体撮像素子、および電子機器
JP6816757B2 (ja) * 2016-03-15 2021-01-20 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US10163949B2 (en) * 2016-03-17 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Image device having multi-layered refractive layer on back surface
FR3049389A1 (fr) * 2016-03-22 2017-09-29 St Microelectronics Crolles 2 Sas Mur d'isolement et son procede de fabrication
JP6789653B2 (ja) * 2016-03-31 2020-11-25 キヤノン株式会社 光電変換装置およびカメラ
US10700114B2 (en) 2016-04-25 2020-06-30 Sony Corporation Solid-state imaging element, method for manufacturing the same, and electronic apparatus
JP6808348B2 (ja) 2016-04-28 2021-01-06 キヤノン株式会社 光電変換装置およびカメラ
JP7490543B2 (ja) * 2016-04-28 2024-05-27 キヤノン株式会社 光電変換装置およびカメラ
EP3483938B1 (en) * 2016-07-06 2020-11-25 Sony Semiconductor Solutions Corporation Imaging element, method for producing imaging element, and electronic device
KR102563588B1 (ko) 2016-08-16 2023-08-03 삼성전자주식회사 이미지 센서 및 이의 제조 방법
EP3387676B1 (en) 2016-10-18 2024-12-04 Sony Semiconductor Solutions Corporation Photodetector
JP6316902B2 (ja) * 2016-10-28 2018-04-25 ソニー株式会社 固体撮像装置、および電子機器
WO2018083990A1 (ja) * 2016-11-02 2018-05-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像装置、並びに電子機器
KR102610588B1 (ko) * 2016-11-08 2023-12-07 에스케이하이닉스 주식회사 이미지 센서 및 이미지 센서 형성 방법
KR20180079518A (ko) 2016-12-30 2018-07-11 삼성전자주식회사 씨모스 이미지 센서
KR102490316B1 (ko) 2017-01-30 2023-01-19 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자, 및 전자 기기
KR102604687B1 (ko) 2017-02-01 2023-11-20 삼성전자주식회사 이미지 센서 및 그 제조 방법
US11411030B2 (en) * 2017-02-17 2022-08-09 Sony Semiconductor Solutions Corporation Imaging element and electronic apparatus
US11069739B2 (en) * 2017-02-21 2021-07-20 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus
CN108462843A (zh) * 2017-02-22 2018-08-28 松下知识产权经营株式会社 摄像装置及摄像模块
US10777597B2 (en) 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
JP2018186151A (ja) 2017-04-25 2018-11-22 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
WO2018207345A1 (ja) * 2017-05-12 2018-11-15 オリンパス株式会社 固体撮像装置
WO2018207340A1 (ja) * 2017-05-12 2018-11-15 オリンパス株式会社 固体撮像装置
US10211244B2 (en) 2017-06-30 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device with reflective structure and method for forming the same
US10644060B2 (en) * 2017-09-28 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with high quantum efficiency surface structure
DE102018106270B4 (de) 2017-09-28 2025-03-27 Taiwan Semiconductor Manufacturing Co. Ltd. Bildsensor mit einer oberflächenstruktur mit verbesserter quantenausbeute
JP2019075515A (ja) * 2017-10-19 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置、撮像装置、製造装置
KR102494604B1 (ko) 2017-10-31 2023-02-02 삼성전자주식회사 이미지 센서
CN107833900A (zh) * 2017-11-07 2018-03-23 德淮半导体有限公司 背照式互补金属氧化物半导体图像传感器及其制造方法
EP3709357A4 (en) * 2017-11-09 2020-12-23 Sony Semiconductor Solutions Corporation IMAGE CAPTURE ELEMENT AND ELECTRONIC DEVICE
KR102673912B1 (ko) 2017-11-09 2024-06-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치, 및 전자 기기
EP3709358B1 (en) * 2017-11-09 2024-02-21 Sony Semiconductor Solutions Corporation Solid-state image pickup device and electronic apparatus
US10468444B2 (en) * 2017-11-09 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the same
WO2019093149A1 (ja) * 2017-11-09 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
KR102427639B1 (ko) 2017-11-13 2022-08-01 삼성전자주식회사 이미지 센싱 소자
JP7078919B2 (ja) * 2017-11-14 2022-06-01 マッハコーポレーション株式会社 固体撮像素子及びその形成方法
KR20190070485A (ko) * 2017-12-13 2019-06-21 주식회사 디비하이텍 후면 조사형 이미지 센서 및 그 제조 방법
WO2019130702A1 (ja) * 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JPWO2019138923A1 (ja) * 2018-01-11 2021-01-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器
JP6779929B2 (ja) 2018-02-09 2020-11-04 キヤノン株式会社 光電変換装置および機器
JP2019165066A (ja) * 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP6607275B2 (ja) * 2018-03-28 2019-11-20 ソニー株式会社 固体撮像装置、および電子機器
CN108461514A (zh) * 2018-03-28 2018-08-28 德淮半导体有限公司 Cmos图形传感器的隔离结构及其形成方法
JP7214373B2 (ja) * 2018-06-04 2023-01-30 キヤノン株式会社 固体撮像素子及び固体撮像素子の製造方法、撮像システム
US11348955B2 (en) * 2018-06-05 2022-05-31 Brillnics Singapore Pte. Ltd. Pixel structure for image sensors
US20210249454A1 (en) * 2018-06-15 2021-08-12 Sony Semiconductor Solutions Corporation Solid-state imaging element, method of manufacturing solid-state imaging element, and electronic apparatus
JP2020013817A (ja) * 2018-07-13 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JP7362198B2 (ja) 2018-07-18 2023-10-17 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器
JP2020027884A (ja) * 2018-08-13 2020-02-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
KR102646903B1 (ko) 2018-09-04 2024-03-12 삼성전자주식회사 이미지 센서
JP6981383B2 (ja) * 2018-09-05 2021-12-15 住友電気工業株式会社 半導体受光デバイス
JP7182968B2 (ja) 2018-09-12 2022-12-05 キヤノン株式会社 光電変換装置および機器
JP2020053450A (ja) * 2018-09-25 2020-04-02 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
EP3866200A4 (en) * 2018-10-11 2022-01-19 Sony Semiconductor Solutions Corporation SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
US11121160B2 (en) 2018-10-17 2021-09-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region
US11244978B2 (en) 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
TWI850257B (zh) * 2018-10-26 2024-08-01 日商索尼半導體解決方案公司 感測器元件及製造方法以及電子機器
JP2022017616A (ja) 2018-11-09 2022-01-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
JP2020085666A (ja) * 2018-11-26 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 生体由来物質検出用チップ、生体由来物質検出装置及び生体由来物質検出システム
JP7280034B2 (ja) * 2018-12-03 2023-05-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
KR102637626B1 (ko) * 2019-01-08 2024-02-20 삼성전자주식회사 이미지 센서
KR102651605B1 (ko) * 2019-01-11 2024-03-27 삼성전자주식회사 이미지 센서
KR102749135B1 (ko) * 2019-03-06 2025-01-03 삼성전자주식회사 이미지 센서 및 이미징 장치
JP7236692B2 (ja) * 2019-03-27 2023-03-10 パナソニックIpマネジメント株式会社 光検出器及び光検出器の製造方法
JP2020167249A (ja) * 2019-03-29 2020-10-08 ソニーセミコンダクタソリューションズ株式会社 センサチップおよび測距装置
KR102609559B1 (ko) * 2019-04-10 2023-12-04 삼성전자주식회사 공유 픽셀들을 포함하는 이미지 센서
CN110164887A (zh) * 2019-04-30 2019-08-23 德淮半导体有限公司 图像传感器及其形成方法
TWI868145B (zh) 2019-05-31 2025-01-01 日商索尼半導體解決方案公司 固體攝像裝置
JP7398215B2 (ja) * 2019-06-25 2023-12-14 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
US12376410B2 (en) 2019-07-04 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Imaging device with embedded conductive layers
JPWO2021009978A1 (https=) * 2019-07-12 2021-01-21
KR20220030939A (ko) 2019-07-12 2022-03-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 광 검출 장치
KR102710378B1 (ko) * 2019-07-25 2024-09-26 삼성전자주식회사 자동 초점 이미지 센서의 픽셀 어레이 및 이를 포함하는 자동 초점 이미지 센서
KR102696964B1 (ko) * 2019-08-26 2024-08-21 에스케이하이닉스 주식회사 이미지 센서
JP7479801B2 (ja) * 2019-08-27 2024-05-09 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造方法、および電子機器
JP2021040088A (ja) * 2019-09-05 2021-03-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
CN114008781B (zh) * 2019-09-30 2026-04-17 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN114008782B (zh) 2019-09-30 2026-02-24 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
EP4033535B1 (en) 2019-09-30 2025-09-10 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image sensor, camera assembly and mobile terminal
US11705472B2 (en) 2019-10-10 2023-07-18 Visera Technologies Company Limited Biosensor and method of distinguishing a light
US11630062B2 (en) * 2019-10-10 2023-04-18 Visera Technologies Company Limited Biosensor and method of forming the same
JP2021068788A (ja) 2019-10-21 2021-04-30 キヤノン株式会社 光電変換装置、光電変換装置の製造方法、および撮像システム
US20220399469A1 (en) * 2019-10-30 2022-12-15 Sony Semiconductor Solutions Corporation Light receiving element, light receiving element manufacturing method, and solid-state image pickup apparatus
JP7517804B2 (ja) * 2019-11-06 2024-07-17 ソニーセミコンダクタソリューションズ株式会社 受光素子および測距装置
KR102721028B1 (ko) * 2019-11-08 2024-10-25 삼성전자주식회사 이미지 센서
TW202127637A (zh) * 2019-11-19 2021-07-16 日商索尼半導體解決方案公司 受光元件、測距模組
JP7532025B2 (ja) * 2019-11-25 2024-08-13 キヤノン株式会社 半導体装置および機器
JP2021086931A (ja) * 2019-11-28 2021-06-03 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
CN111312654B (zh) 2019-12-02 2022-06-28 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
CN111029352B (zh) * 2019-12-02 2022-07-01 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
JP7692840B2 (ja) * 2019-12-17 2025-06-16 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の駆動方法および電子機器
TW202133460A (zh) * 2020-01-20 2021-09-01 日商索尼半導體解決方案公司 受光元件、攝像元件及攝像裝置
JP7570037B2 (ja) * 2020-01-21 2024-10-21 パナソニックIpマネジメント株式会社 フォトセンサ及び距離測定システム
WO2021149577A1 (ja) * 2020-01-24 2021-07-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
CN115039225B (zh) * 2020-02-07 2026-01-16 华为技术有限公司 光传感器设备及其制备方法
JP7691970B2 (ja) * 2020-02-21 2025-06-12 タワー パートナーズ セミコンダクター株式会社 固体撮像装置
US12015042B2 (en) 2020-02-21 2024-06-18 Applied Materials, Inc. Structure and material engineering methods for optoelectronic devices signal to noise ratio enhancement
WO2021171717A1 (ja) * 2020-02-26 2021-09-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置および固体撮像素子の制御方法
US20230197753A1 (en) * 2020-03-16 2023-06-22 Sony Semiconductor Solutions Corporation Solid-state image element and electronic device
JP7441086B2 (ja) * 2020-03-23 2024-02-29 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
JP7462263B2 (ja) * 2020-03-24 2024-04-05 パナソニックIpマネジメント株式会社 半導体素子および固体撮像装置
TWI910139B (zh) * 2020-03-27 2026-01-01 日商索尼半導體解決方案公司 攝像裝置及電子機器
US20230131416A1 (en) * 2020-03-31 2023-04-27 Sony Semiconductor Solutions Corporation Imaging element and imaging device
US20230102481A1 (en) * 2020-03-31 2023-03-30 Sony Semiconductor Solutions Corporation Light receiving element and electronic equipment
JP7500251B2 (ja) * 2020-04-01 2024-06-17 キヤノン株式会社 光電変換装置
JP2020102656A (ja) * 2020-04-06 2020-07-02 キヤノン株式会社 半導体装置および半導体装置の製造方法
JP7612340B2 (ja) * 2020-04-07 2025-01-14 キヤノン株式会社 光電変換装置およびその製造方法
CN115380381A (zh) * 2020-04-20 2022-11-22 索尼半导体解决方案公司 固态摄像元件
US20230197748A1 (en) * 2020-04-20 2023-06-22 Sony Semiconductor Solutions Corporation Solid-state imaging element and electronic device
US11152520B1 (en) * 2020-05-07 2021-10-19 Globalfoundries U.S. Inc. Photodetector with reflector with air gap adjacent photodetecting region
JP2021190466A (ja) * 2020-05-26 2021-12-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器、及び固体撮像装置の製造方法
JP2021197401A (ja) 2020-06-10 2021-12-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置の製造方法、固体撮像装置及び電子機器
US11664403B2 (en) * 2020-06-12 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing method of image sensor device having metal grid partially embedded in buffer layer
KR102824308B1 (ko) * 2020-07-07 2025-06-25 삼성전자주식회사 이미지 센서
KR102841626B1 (ko) * 2020-08-10 2025-07-31 삼성전자주식회사 이미지 센서
JP7656409B2 (ja) * 2020-08-24 2025-04-03 タワー パートナーズ セミコンダクター株式会社 固体撮像装置
KR102907477B1 (ko) * 2020-09-28 2026-01-07 삼성전자주식회사 이미지 센서
KR102904474B1 (ko) * 2020-10-05 2025-12-24 삼성전자 주식회사 이미지 센서 및 이를 포함하는 전자 시스템
KR20220045831A (ko) * 2020-10-06 2022-04-13 삼성전자주식회사 이미지 센서
US11784204B2 (en) * 2020-10-19 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced trench isolation structure
JP2023182872A (ja) 2020-11-12 2023-12-27 ソニーグループ株式会社 固体撮像素子およびその製造方法
WO2022104658A1 (en) * 2020-11-19 2022-05-27 Huawei Technologies Co., Ltd. Solid state imaging device
US20240006432A1 (en) * 2020-11-20 2024-01-04 Sony Semiconductor Solutions Corporation Imaging device
JP2023083369A (ja) * 2020-12-09 2023-06-15 キヤノン株式会社 光電変換装置およびカメラ
TW202226564A (zh) 2020-12-25 2022-07-01 日商索尼半導體解決方案公司 固態攝像裝置及其製造方法
US11908878B2 (en) * 2021-01-15 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor and manufacturing method thereof
US11862654B2 (en) 2021-01-15 2024-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Trench isolation structure for image sensors
KR102901404B1 (ko) * 2021-01-22 2025-12-18 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP2022114224A (ja) * 2021-01-26 2022-08-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP7637162B2 (ja) * 2021-02-02 2025-02-27 株式会社ジャパンディスプレイ 検出装置及び検出装置の製造方法
JP2022135130A (ja) * 2021-03-04 2022-09-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
JP7635034B2 (ja) * 2021-03-22 2025-02-25 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
WO2022201745A1 (ja) * 2021-03-25 2022-09-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び固体撮像装置の製造方法
JP2021101491A (ja) * 2021-03-31 2021-07-08 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
US12218166B2 (en) * 2021-04-19 2025-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. CSI with controllable isolation structure and methods of manufacturing and using the same
US20240192054A1 (en) 2021-04-20 2024-06-13 Sony Semiconductor Solutions Corporation Light detection apparatus and electronic device
US12062679B2 (en) * 2021-04-27 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Backside structure for image sensor
KR20220149127A (ko) * 2021-04-30 2022-11-08 삼성전자주식회사 이미지 센서
JP2023012890A (ja) * 2021-07-14 2023-01-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
JP2023016007A (ja) 2021-07-20 2023-02-01 株式会社半導体エネルギー研究所 表示装置および電子装置
TW202310378A (zh) * 2021-08-06 2023-03-01 日商索尼半導體解決方案公司 光檢測器、光檢測器之製造方法及電子機器
WO2023013444A1 (ja) 2021-08-06 2023-02-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置
CN115706116A (zh) * 2021-08-10 2023-02-17 格科微电子(上海)有限公司 图像传感器及其形成方法
CN115706117A (zh) * 2021-08-12 2023-02-17 中芯国际集成电路制造(北京)有限公司 Ccd图像传感器及其形成方法
US20250123144A1 (en) 2021-08-16 2025-04-17 Sony Semiconductor Solutions Corporation Light detection apparatus and method of manufacturing the same
DE112022004422T5 (de) * 2021-09-16 2024-07-11 Sony Semiconductor Solutions Corporation Lichtdetektionsvorrichtung, verfahren zum herstellen einer lichtdetektionsvorrichtung und elektronische ausrüstung
KR20230063115A (ko) * 2021-11-01 2023-05-09 에스케이하이닉스 주식회사 이미지 센싱 장치
KR102949936B1 (ko) * 2021-11-29 2026-04-08 삼성전자주식회사 반사 구조체를 포함하는 이미지 센서
KR20240148835A (ko) * 2022-02-15 2024-10-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 광 검출 장치 및 전자 기기
WO2023157818A1 (ja) * 2022-02-15 2023-08-24 ソニーセミコンダクタソリューションズ株式会社 光検出装置および光検出装置の製造方法
US12490537B2 (en) 2022-03-22 2025-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor having an improved structure for small pixel designs
JP2023144526A (ja) * 2022-03-28 2023-10-11 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
US12310137B2 (en) * 2022-03-30 2025-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure to increase image sensor performance
US20230361149A1 (en) * 2022-05-03 2023-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Backside deep trench isolation (bdti) structure for cmos image sensor
US12550473B2 (en) 2022-05-17 2026-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Back-trench isolation structure
JP2023178690A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、機器
US12408448B2 (en) * 2022-06-13 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation structure and methods for fabrication thereof
US20250374702A1 (en) * 2022-06-24 2025-12-04 Sony Semiconductor Solutions Corporation Imaging element and electronic device
CN115274722B (zh) 2022-06-30 2025-02-07 豪威科技(上海)有限公司 图像传感器及其制作方法
CN119325752A (zh) * 2022-07-14 2025-01-17 索尼半导体解决方案公司 光检测器
US12532560B2 (en) 2022-07-25 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure with multiple components to increase image sensor performance
JP2024035593A (ja) * 2022-09-02 2024-03-14 株式会社東芝 光検出器及び距離計測装置
WO2024053401A1 (ja) * 2022-09-06 2024-03-14 ソニーセミコンダクタソリューションズ株式会社 光検出装置、電子機器及び光検出装置の製造方法
CN120836203A (zh) * 2023-04-07 2025-10-24 索尼半导体解决方案公司 光检测装置
US20240355855A1 (en) * 2023-04-21 2024-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation structure for image sensor narrowed by epitaxy growth
JP2025005674A (ja) * 2023-06-28 2025-01-17 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
CN121400092A (zh) * 2023-07-28 2026-01-23 索尼半导体解决方案公司 光检测装置和电子设备
CN121816844A (zh) * 2023-10-06 2026-04-07 索尼半导体解决方案公司 光检测装置和电子设备
CN117238842B (zh) * 2023-11-14 2024-03-08 合肥晶合集成电路股份有限公司 深沟槽的形成方法以及背照式图像传感器制造方法
WO2025206236A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2026074907A1 (ja) * 2024-10-02 2026-04-09 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010544A (ja) * 2006-06-28 2008-01-17 Renesas Technology Corp 固体撮像素子
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691237B2 (ja) * 1986-09-10 1994-11-14 日本電気株式会社 固体撮像素子
JPH04280677A (ja) * 1991-03-08 1992-10-06 Sony Corp 積層型固体撮像装置
EP1398831A3 (en) * 2002-09-13 2008-02-20 Shipley Co. L.L.C. Air gaps formation
JP2005123449A (ja) * 2003-10-17 2005-05-12 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
WO2005069377A1 (ja) * 2004-01-19 2005-07-28 Matsushita Electric Industrial Co., Ltd. 固体撮像装置およびその製造方法
US7492027B2 (en) * 2004-02-20 2009-02-17 Micron Technology, Inc. Reduced crosstalk sensor and method of formation
JP2005251947A (ja) * 2004-03-03 2005-09-15 Matsushita Electric Ind Co Ltd 固体撮像装置とその製造方法および固体撮像装置を用いたカメラ
US8035142B2 (en) * 2004-07-08 2011-10-11 Micron Technology, Inc. Deuterated structures for image sensors and methods for forming the same
JP4483442B2 (ja) * 2004-07-13 2010-06-16 ソニー株式会社 固体撮像素子と固体撮像装置、固体撮像素子の製造方法
JP4595464B2 (ja) * 2004-09-22 2010-12-08 ソニー株式会社 Cmos固体撮像素子の製造方法
KR100678269B1 (ko) * 2004-10-18 2007-02-02 삼성전자주식회사 씨모스 방식의 이미지 센서와 그 제작 방법
US7619266B2 (en) * 2006-01-09 2009-11-17 Aptina Imaging Corporation Image sensor with improved surface depletion
JP2007227761A (ja) * 2006-02-24 2007-09-06 Matsushita Electric Ind Co Ltd 固体撮像装置用素子
KR100761466B1 (ko) * 2006-06-12 2007-09-27 삼성전자주식회사 반도체장치의 소자분리구조 형성방법
JP4361072B2 (ja) * 2006-06-15 2009-11-11 日本テキサス・インスツルメンツ株式会社 固体撮像装置及びその製造方法
US7916195B2 (en) * 2006-10-13 2011-03-29 Sony Corporation Solid-state imaging device, imaging apparatus and camera
JP2008244021A (ja) * 2007-03-26 2008-10-09 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
TWI413240B (zh) * 2007-05-07 2013-10-21 新力股份有限公司 A solid-state imaging device, a manufacturing method thereof, and an image pickup device
JP5104036B2 (ja) * 2007-05-24 2012-12-19 ソニー株式会社 固体撮像素子とその製造方法及び撮像装置
JP2008300537A (ja) * 2007-05-30 2008-12-11 Toshiba Corp 固体撮像装置
JP5055026B2 (ja) * 2007-05-31 2012-10-24 富士フイルム株式会社 撮像素子、撮像素子の製造方法、及び、撮像素子用の半導体基板
JP4621719B2 (ja) * 2007-09-27 2011-01-26 富士フイルム株式会社 裏面照射型撮像素子
JP5151375B2 (ja) * 2007-10-03 2013-02-27 ソニー株式会社 固体撮像装置およびその製造方法および撮像装置
JP4599417B2 (ja) * 2008-01-31 2010-12-15 富士フイルム株式会社 裏面照射型固体撮像素子
JP2009272596A (ja) * 2008-04-09 2009-11-19 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP5401928B2 (ja) * 2008-11-06 2014-01-29 ソニー株式会社 固体撮像装置、及び電子機器
JP2010021204A (ja) * 2008-07-08 2010-01-28 Toshiba Corp 半導体装置及びその製造方法
JP2010073902A (ja) * 2008-09-18 2010-04-02 Sony Corp イオン注入方法、固体撮像装置の製造方法、固体撮像装置、並びに電子機器
JP5297135B2 (ja) * 2008-10-01 2013-09-25 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP5353201B2 (ja) * 2008-11-21 2013-11-27 ソニー株式会社 固体撮像装置の製造方法
JP4798232B2 (ja) * 2009-02-10 2011-10-19 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP4816768B2 (ja) * 2009-06-22 2011-11-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP5262823B2 (ja) * 2009-02-23 2013-08-14 ソニー株式会社 固体撮像装置および電子機器
JP5558857B2 (ja) * 2009-03-09 2014-07-23 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP2010225818A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 固体撮像装置及びその製造方法
JP5446374B2 (ja) * 2009-03-27 2014-03-19 凸版印刷株式会社 固体撮像素子及びその製造方法
JP2010258157A (ja) * 2009-04-23 2010-11-11 Panasonic Corp 固体撮像装置およびその製造方法
JP2010283145A (ja) * 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器
JP5552768B2 (ja) * 2009-07-27 2014-07-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2011035154A (ja) * 2009-07-31 2011-02-17 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2011054741A (ja) * 2009-09-01 2011-03-17 Toshiba Corp 裏面照射型固体撮像装置
JP5172819B2 (ja) * 2009-12-28 2013-03-27 株式会社東芝 固体撮像装置
KR101788124B1 (ko) * 2010-07-07 2017-10-20 삼성전자 주식회사 후면 조사형 이미지 센서 및 그 제조 방법
JP2012023207A (ja) * 2010-07-14 2012-02-02 Toshiba Corp 裏面照射型固体撮像装置
JP2012169530A (ja) * 2011-02-16 2012-09-06 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP5606961B2 (ja) * 2011-02-25 2014-10-15 ルネサスエレクトロニクス株式会社 半導体装置
JP5810551B2 (ja) * 2011-02-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP6299058B2 (ja) 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP5794068B2 (ja) * 2011-09-16 2015-10-14 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
TW201405792A (zh) * 2012-07-30 2014-02-01 新力股份有限公司 固體攝像裝置、固體攝像裝置之製造方法及電子機器
JP2014096490A (ja) * 2012-11-09 2014-05-22 Sony Corp 撮像素子、製造方法
JP6119432B2 (ja) * 2013-05-31 2017-04-26 ソニー株式会社 固体撮像素子、電子機器、および製造方法
JP2015023259A (ja) * 2013-07-23 2015-02-02 株式会社東芝 固体撮像装置およびその製造方法
JP6251406B2 (ja) * 2015-01-16 2017-12-20 雫石 誠 半導体素子とその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010544A (ja) * 2006-06-28 2008-01-17 Renesas Technology Corp 固体撮像素子
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法

Also Published As

Publication number Publication date
US10418404B2 (en) 2019-09-17
KR20170070266A (ko) 2017-06-21
CN105405856B (zh) 2019-03-08
JP7641076B2 (ja) 2025-03-06
US20140054662A1 (en) 2014-02-27
CN106229323A (zh) 2016-12-14
CN103403869B (zh) 2016-08-24
CN106067468A (zh) 2016-11-02
KR20200001615A (ko) 2020-01-06
CN106067468B (zh) 2019-09-13
CN103403869A (zh) 2013-11-20
US10128291B2 (en) 2018-11-13
JP6862298B2 (ja) 2021-04-21
US10504953B2 (en) 2019-12-10
KR20140015326A (ko) 2014-02-06
JP2020080418A (ja) 2020-05-28
US20190206911A1 (en) 2019-07-04
JP2017191950A (ja) 2017-10-19
US9923010B2 (en) 2018-03-20
CN106229323B (zh) 2018-02-09
US20190027520A1 (en) 2019-01-24
KR20180103185A (ko) 2018-09-18
JP6299058B2 (ja) 2018-03-28
US9673235B2 (en) 2017-06-06
WO2012117931A1 (ja) 2012-09-07
CN105405856A (zh) 2016-03-16
US9502450B2 (en) 2016-11-22
US20170271385A1 (en) 2017-09-21
KR102065291B1 (ko) 2020-01-10
US9595557B2 (en) 2017-03-14
JP2013175494A (ja) 2013-09-05
JP6862298B6 (ja) 2021-05-26
US20170170217A1 (en) 2017-06-15
JP2022046719A (ja) 2022-03-23
US20160336372A1 (en) 2016-11-17
US20160211288A1 (en) 2016-07-21

Similar Documents

Publication Publication Date Title
JP7641076B2 (ja) 固体撮像装置、及び、電子機器
KR102237324B1 (ko) 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기
US8450728B2 (en) Solid-state imaging device, method of manufacturing the same, and electronic apparatus
KR101900102B1 (ko) 고체 촬상 장치, 고체 촬상 장치의 제조 방법, 및 전자 기기

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20191227

Application number text: 1020187026037

Filing date: 20180907

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20200116

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200311

Patent event code: PE09021S01D

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20200605

Patent event code: PE09021S02D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20201007

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210107

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210107

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20231227

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20241224

Start annual number: 5

End annual number: 5