JP6816014B2 - 固体撮像素子、製造方法、および電子機器 - Google Patents
固体撮像素子、製造方法、および電子機器 Download PDFInfo
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- JP6816014B2 JP6816014B2 JP2017551815A JP2017551815A JP6816014B2 JP 6816014 B2 JP6816014 B2 JP 6816014B2 JP 2017551815 A JP2017551815 A JP 2017551815A JP 2017551815 A JP2017551815 A JP 2017551815A JP 6816014 B2 JP6816014 B2 JP 6816014B2
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- 238000009413 insulation Methods 0.000 claims description 3
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- 239000004065 semiconductor Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
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- 238000000231 atomic layer deposition Methods 0.000 description 2
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/48—Increasing resolution by shifting the sensor relative to the scene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Description
・自動停止等の安全運転や、運転者の状態の認識等のために、自動車の前方や後方、周囲、車内等を撮影する車載用センサ、走行車両や道路を監視する監視カメラ、車両間等の測距を行う測距センサ等の、交通の用に供される装置
・ユーザのジェスチャを撮影して、そのジェスチャに従った機器操作を行うために、TVや、冷蔵庫、エアーコンディショナ等の家電に供される装置
・内視鏡や、赤外光の受光による血管撮影を行う装置等の、医療やヘルスケアの用に供される装置
・防犯用途の監視カメラや、人物認証用途のカメラ等の、セキュリティの用に供される装置
・肌を撮影する肌測定器や、頭皮を撮影するマイクロスコープ等の、美容の用に供される装置
・スポーツ用途等向けのアクションカメラやウェアラブルカメラ等の、スポーツの用に供される装置
・畑や作物の状態を監視するためのカメラ等の、農業の用に供される装置
(1)
上部電極との間に有機材料を含む光電変換膜を挟み込むように、画素ごとに設けられる下部電極と、
前記画素間で前記下部電極どうしを分離する配置で、固定電荷を有する固定電荷膜を少なくとも有して構成される分離領域と
を備える固体撮像素子。
(2)
前記分離領域は、前記下部電極の厚みよりも深く形成された前記固定電荷膜により形成される
上記(1)に記載の固体撮像素子。
(3)
前記分離領域は、前記光電変換膜に接するように前記下部電極の厚みよりも浅く形成された前記固定電荷膜と、前記固定電荷膜の下層側において前記下部電極の厚みよりも深く形成された絶縁膜との積層構造により形成される
上記(1)に記載の固体撮像素子。
(4)
前記固体撮像素子は、ホール読み出し方式であり、
前記固定電荷膜は、正の固定電荷を有する
上記(1)から(3)までのいずれかに記載の固体撮像素子。
(5)
前記固体撮像素子は、電子読み出し方式であり、
前記固定電荷膜は、負の固定電荷を有する
上記(1)から(3)までのいずれかに記載の固体撮像素子。
(6)
上部電極との間に有機材料を含む光電変換膜を挟み込むように、画素ごとに設けられる下部電極を形成し、
前記画素間で前記下部電極どうしを分離する配置で、固定電荷を有する固定電荷膜を少なくとも有して構成される分離領域を形成する
ステップを含む固体撮像素子の製造方法。
(7)
上部電極との間に有機材料を含む光電変換膜を挟み込むように、画素ごとに設けられる下部電極と、
前記画素間で前記下部電極どうしを分離する配置で、固定電荷を有する固定電荷膜を少なくとも有して構成される分離領域と
を有する固体撮像素子を備える電子機器。
Claims (6)
- 上部電極との間に有機材料を含む光電変換膜を挟み込むように、画素ごとに設けられる下部電極と、
前記画素間で前記下部電極どうしを分離するように前記下部電極との間に隙間を設けずに配置され、固定電荷を有する固定電荷膜を少なくとも有して構成される分離領域と
を備え、
ホール読み出し方式である場合には、前記固定電荷膜は正の固定電荷を有し、
電子読み出し方式である場合には、前記固定電荷膜は負の固定電荷を有する
固体撮像素子。 - 前記分離領域は、前記下部電極の厚みよりも深く形成された前記固定電荷膜により形成される
請求項1に記載の固体撮像素子。 - 前記分離領域は、前記光電変換膜に接するように前記下部電極の厚みよりも浅く形成された前記固定電荷膜と、前記固定電荷膜の下層側において前記下部電極の厚みよりも深く形成された絶縁膜との積層構造により形成される
請求項1に記載の固体撮像素子。 - 前記分離領域は、前記下部電極を前記画素ごとに分離するためのエッチングにより形成された凹部に前記固定電荷膜が埋め込まれて構成される
請求項1に記載の固体撮像素子。 - 上部電極との間に有機材料を含む光電変換膜を挟み込むように、画素ごとに設けられる下部電極を形成し、
前記画素間で前記下部電極どうしを分離するように前記下部電極との間に隙間を設けずに配置され、固定電荷を有する固定電荷膜を少なくとも有して構成される分離領域を形成する
ステップを含み、
ホール読み出し方式である場合には、前記固定電荷膜は正の固定電荷を有し、
電子読み出し方式である場合には、前記固定電荷膜は負の固定電荷を有する
固体撮像素子の製造方法。 - 上部電極との間に有機材料を含む光電変換膜を挟み込むように、画素ごとに設けられる下部電極と、
前記画素間で前記下部電極どうしを分離するように前記下部電極との間に隙間を設けずに配置され、固定電荷を有する固定電荷膜を少なくとも有して構成される分離領域と
を有し、
ホール読み出し方式である場合には、前記固定電荷膜は正の固定電荷を有し、
電子読み出し方式である場合には、前記固定電荷膜は負の固定電荷を有する
固体撮像素子を備える電子機器。
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JP2015225377 | 2015-11-18 | ||
JP2015225377 | 2015-11-18 | ||
PCT/JP2016/082738 WO2017086180A1 (ja) | 2015-11-18 | 2016-11-04 | 固体撮像素子、製造方法、および電子機器 |
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JP (1) | JP6816014B2 (ja) |
WO (1) | WO2017086180A1 (ja) |
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WO2019093479A1 (ja) | 2017-11-09 | 2019-05-16 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
KR102560623B1 (ko) * | 2018-06-05 | 2023-07-26 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
WO2019235130A1 (ja) * | 2018-06-08 | 2019-12-12 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置 |
JP7362198B2 (ja) | 2018-07-18 | 2023-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、測距モジュール、および、電子機器 |
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JPH08116045A (ja) * | 1994-08-25 | 1996-05-07 | Toshiba Corp | 固体撮像装置 |
JP4961590B2 (ja) * | 2007-04-13 | 2012-06-27 | 力晶科技股▲ふん▼有限公司 | イメージセンサー及びその製作方法 |
KR100922935B1 (ko) * | 2007-11-05 | 2009-10-22 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
JP5537905B2 (ja) * | 2009-11-10 | 2014-07-02 | 富士フイルム株式会社 | 撮像素子及び撮像装置 |
JP5525878B2 (ja) * | 2010-03-17 | 2014-06-18 | 富士フイルム株式会社 | 光電変換膜積層型固体撮像素子及び撮像装置 |
JP5651982B2 (ja) * | 2010-03-31 | 2015-01-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
JP2011249623A (ja) | 2010-05-28 | 2011-12-08 | Panasonic Corp | 光電変換素子とその製造方法、および固体撮像素子とその製造方法 |
JP5682174B2 (ja) * | 2010-08-09 | 2015-03-11 | ソニー株式会社 | 固体撮像装置とその製造方法、並びに電子機器 |
JP2012064822A (ja) * | 2010-09-17 | 2012-03-29 | Panasonic Corp | 固体撮像装置及びその製造方法 |
JP2012124318A (ja) | 2010-12-08 | 2012-06-28 | Sony Corp | 固体撮像素子の製造方法、固体撮像素子、および電子機器 |
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- 2016-11-04 US US15/773,835 patent/US10531020B2/en active Active
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US10531020B2 (en) | 2020-01-07 |
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