JP6700811B2 - 半導体装置および半導体装置の製造方法 - Google Patents
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Description
10 表面
20 裏面
11 第1面
21 第2面
30 中間面
310 導電部材
103、203 固体材料
130、230 中空部
220 溝
Claims (13)
- トランジスタが設けられた表面と前記表面とは反対側の裏面を有する半導体層と、前記半導体層を貫通する導電部材と、を備えた半導体装置において、
前記表面を含み前記表面に沿った仮想的な平面を第1面、前記裏面を含み前記裏面に沿った仮想的な平面を第2面、前記第1面および前記第2面から等しい距離に位置する仮想的な平面を第3面として、
前記第2面と前記第3面との間において、前記導電部材と前記半導体層との間には絶縁体である固体材料が配されており、
前記第1面と前記第3面との間において、前記導電部材と前記半導体層との間には中空部が配されており、
前記中空部は前記第1面と前記第2面を結ぶ線分上において前記固体材料に包囲され、
前記第1面および前記第2面に交差する方向における前記中空部の中心は、前記第1面と前記第3面との間に位置することを特徴とする半導体装置。 - 前記第1面における前記導電部材の幅は、前記第2面における前記導電部材の幅よりも小さい、請求項1に記載の半導体装置。
- 前記中空部と前記導電部材との距離が、前記中空部と前記半導体層との距離よりも小さい、請求項1または2に記載の半導体装置。
- 前記中空部の一部は前記第2面と前記第3面との間に位置している、請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記固体材料の少なくとも一部は前記第1面と前記第3面との間に位置している、請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記半導体層の前記第1面側であって、前記導電部材の周りには素子分離部が設けられていることを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。
- 前記素子分離部はSTI構造であることを特徴とする請求項6に記載の半導体装置。
- 前記半導体層の厚さは、2〜10μmであることを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置。
- 前記半導体層の前記第2面と前記固体材料を覆う絶縁層を有し、
前記絶縁層は、開口を有し、
前記導電部材は、前記絶縁層の開口に配されることを特徴とする請求項1乃至8のいずれか1項に記載の半導体装置。 - 前記半導体層の前記第1面側には、配線層と絶縁膜を含む配線構造を有し、
前記導電部材は、前記絶縁膜の開口に設けられ、前記配線層と接続することを特徴とする請求項1乃至9のいずれか1項に記載の半導体装置。 - 前記配線層と前記第1面との間において、前記導電部材は前記絶縁膜に囲まれていることを特徴とする請求項10に記載の半導体装置。
- 別の基板を有し、前記別の基板と前記第1面との間に前記配線構造が配されていることを特徴とする請求項10または11に記載の半導体装置。
- 前記半導体層を貫通する別の導電部材と、
前記第2面と前記第3面との間において、前記導電部材と前記半導体層との間に配され、絶縁体である別の固体材料と、
前記第1面と前記第3面との間において、前記導電部材と前記半導体層との間に配された別の中空部と、を有し、
前記第1面と前記別の中空部との間には、前記別の固体材料が配されており、
前記第1面および前記第2面に交差する方向における前記別の中空部の中心は、前記第1面と前記第3面との間に位置することを特徴とする請求項1乃至12のいずれか1項に記載の半導体装置。
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US15/413,711 US11069732B2 (en) | 2016-01-26 | 2017-01-24 | Semiconductor device and method for manufacturing semiconductor device |
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US11756977B2 (en) * | 2018-06-21 | 2023-09-12 | Semiconductor Components Industries, Llc | Backside illumination image sensors |
CN109244086B (zh) * | 2018-09-29 | 2020-06-23 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板、显示装置 |
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