KR101773641B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101773641B1
KR101773641B1 KR1020127019395A KR20127019395A KR101773641B1 KR 101773641 B1 KR101773641 B1 KR 101773641B1 KR 1020127019395 A KR1020127019395 A KR 1020127019395A KR 20127019395 A KR20127019395 A KR 20127019395A KR 101773641 B1 KR101773641 B1 KR 101773641B1
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South Korea
Prior art keywords
terminal
gate
electrically connected
transistor
oxide semiconductor
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Korean (ko)
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KR20120127713A (ko
Inventor
？뻬이 야마자끼
šœ뻬이 야마자끼
준 고야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Shift Register Type Memory (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
KR1020127019395A 2010-01-22 2010-12-22 반도체 장치 Active KR101773641B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-012627 2010-01-22
JP2010012627 2010-01-22
PCT/JP2010/073844 WO2011089841A1 (en) 2010-01-22 2010-12-22 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020157035900A Division KR101829309B1 (ko) 2010-01-22 2010-12-22 반도체 장치

Publications (2)

Publication Number Publication Date
KR20120127713A KR20120127713A (ko) 2012-11-23
KR101773641B1 true KR101773641B1 (ko) 2017-09-12

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KR1020127019395A Active KR101773641B1 (ko) 2010-01-22 2010-12-22 반도체 장치

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Country Status (5)

Country Link
US (4) US8344788B2 (enExample)
JP (14) JP5570441B2 (enExample)
KR (2) KR101829309B1 (enExample)
TW (2) TWI605567B (enExample)
WO (1) WO2011089841A1 (enExample)

Families Citing this family (45)

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KR101829309B1 (ko) 2010-01-22 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101885691B1 (ko) 2010-07-27 2018-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101856722B1 (ko) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5886128B2 (ja) * 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
CN102842885B (zh) * 2011-06-22 2017-07-21 富泰华工业（深圳）有限公司 保护电路及具有保护电路的电子装置
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US9112037B2 (en) * 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20130207102A1 (en) * 2012-02-15 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5975907B2 (ja) * 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
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WO2014065343A1 (en) * 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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US9293544B2 (en) * 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI624936B (zh) * 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
KR20210079411A (ko) 2013-06-27 2021-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10529740B2 (en) 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
JP2015188062A (ja) 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
US20150263140A1 (en) * 2014-03-14 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6541398B2 (ja) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
US9722090B2 (en) * 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
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JP6693885B2 (ja) * 2014-11-20 2020-05-13 株式会社半導体エネルギー研究所 半導体装置
KR102315333B1 (ko) 2015-02-04 2021-10-19 삼성전자주식회사 회로 디자인 시스템 및 이를 이용한 반도체 회로
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JP2017055338A (ja) * 2015-09-11 2017-03-16 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN110730984B (zh) * 2017-06-08 2021-12-03 夏普株式会社 有源矩阵基板和显示装置
JP6878173B2 (ja) * 2017-06-26 2021-05-26 株式会社ジャパンディスプレイ 半導体装置
TWI653799B (zh) 2017-09-27 2019-03-11 瑞昱半導體股份有限公司 能夠避免過電壓之損害的電路
KR102605008B1 (ko) 2018-01-24 2023-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
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TWI660564B (zh) 2018-06-01 2019-05-21 杰力科技股份有限公司 電壓轉換電路及其控制電路
JP7122872B2 (ja) * 2018-06-06 2022-08-22 株式会社ジャパンディスプレイ 半導体装置
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
KR102098492B1 (ko) * 2018-09-10 2020-04-08 동국대학교 산학협력단 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를 포함하는 다이오드
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
WO2020240331A1 (ja) 2019-05-31 2020-12-03 株式会社半導体エネルギー研究所 半導体装置、および当該半導体装置を備えた無線通信装置
JP7444436B2 (ja) * 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
TWI859917B (zh) * 2023-06-08 2024-10-21 日商豊田合成股份有限公司 氮化物半導體裝置
JP2025124470A (ja) * 2024-02-14 2025-08-26 ミネベアパワーデバイス株式会社 半導体装置

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