JP5570441B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5570441B2
JP5570441B2 JP2011010333A JP2011010333A JP5570441B2 JP 5570441 B2 JP5570441 B2 JP 5570441B2 JP 2011010333 A JP2011010333 A JP 2011010333A JP 2011010333 A JP2011010333 A JP 2011010333A JP 5570441 B2 JP5570441 B2 JP 5570441B2
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JP
Japan
Prior art keywords
gate
terminal
layer
oxide semiconductor
semiconductor layer
Prior art date
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Expired - Fee Related
Application number
JP2011010333A
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English (en)
Japanese (ja)
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JP2011172217A5 (enExample
JP2011172217A (ja
Inventor
舜平 山崎
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011010333A priority Critical patent/JP5570441B2/ja
Publication of JP2011172217A publication Critical patent/JP2011172217A/ja
Publication of JP2011172217A5 publication Critical patent/JP2011172217A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Shift Register Type Memory (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
JP2011010333A 2010-01-22 2011-01-21 半導体装置 Expired - Fee Related JP5570441B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011010333A JP5570441B2 (ja) 2010-01-22 2011-01-21 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010012627 2010-01-22
JP2010012627 2010-01-22
JP2011010333A JP5570441B2 (ja) 2010-01-22 2011-01-21 半導体装置

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP2012196756A Division JP5128000B1 (ja) 2010-01-22 2012-09-07 半導体装置
JP2013237568A Division JP5493049B2 (ja) 2010-01-22 2013-11-18 半導体装置
JP2014128133A Division JP6002176B2 (ja) 2010-01-22 2014-06-23 半導体装置及び回路
JP2014128798A Division JP5893681B2 (ja) 2010-01-22 2014-06-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2011172217A JP2011172217A (ja) 2011-09-01
JP2011172217A5 JP2011172217A5 (enExample) 2013-12-26
JP5570441B2 true JP5570441B2 (ja) 2014-08-13

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Family Applications (14)

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JP2011010333A Expired - Fee Related JP5570441B2 (ja) 2010-01-22 2011-01-21 半導体装置
JP2012196756A Expired - Fee Related JP5128000B1 (ja) 2010-01-22 2012-09-07 半導体装置
JP2013237568A Active JP5493049B2 (ja) 2010-01-22 2013-11-18 半導体装置
JP2014128133A Expired - Fee Related JP6002176B2 (ja) 2010-01-22 2014-06-23 半導体装置及び回路
JP2014128798A Active JP5893681B2 (ja) 2010-01-22 2014-06-24 半導体装置
JP2016051989A Active JP6148368B2 (ja) 2010-01-22 2016-03-16 半導体装置
JP2017098994A Active JP6419890B2 (ja) 2010-01-22 2017-05-18 半導体装置
JP2018191721A Active JP6596556B2 (ja) 2010-01-22 2018-10-10 半導体装置
JP2019179097A Active JP6871986B2 (ja) 2010-01-22 2019-09-30 半導体装置
JP2021069907A Active JP7130810B2 (ja) 2010-01-22 2021-04-16 半導体装置
JP2022133057A Active JP7174882B2 (ja) 2010-01-22 2022-08-24 半導体装置
JP2022177966A Active JP7460313B2 (ja) 2010-01-22 2022-11-07 半導体装置
JP2024044288A Active JP7684459B2 (ja) 2010-01-22 2024-03-20 半導体装置
JP2025081852A Pending JP2025118882A (ja) 2010-01-22 2025-05-15 半導体装置

Family Applications After (13)

Application Number Title Priority Date Filing Date
JP2012196756A Expired - Fee Related JP5128000B1 (ja) 2010-01-22 2012-09-07 半導体装置
JP2013237568A Active JP5493049B2 (ja) 2010-01-22 2013-11-18 半導体装置
JP2014128133A Expired - Fee Related JP6002176B2 (ja) 2010-01-22 2014-06-23 半導体装置及び回路
JP2014128798A Active JP5893681B2 (ja) 2010-01-22 2014-06-24 半導体装置
JP2016051989A Active JP6148368B2 (ja) 2010-01-22 2016-03-16 半導体装置
JP2017098994A Active JP6419890B2 (ja) 2010-01-22 2017-05-18 半導体装置
JP2018191721A Active JP6596556B2 (ja) 2010-01-22 2018-10-10 半導体装置
JP2019179097A Active JP6871986B2 (ja) 2010-01-22 2019-09-30 半導体装置
JP2021069907A Active JP7130810B2 (ja) 2010-01-22 2021-04-16 半導体装置
JP2022133057A Active JP7174882B2 (ja) 2010-01-22 2022-08-24 半導体装置
JP2022177966A Active JP7460313B2 (ja) 2010-01-22 2022-11-07 半導体装置
JP2024044288A Active JP7684459B2 (ja) 2010-01-22 2024-03-20 半導体装置
JP2025081852A Pending JP2025118882A (ja) 2010-01-22 2025-05-15 半導体装置

Country Status (5)

Country Link
US (4) US8344788B2 (enExample)
JP (14) JP5570441B2 (enExample)
KR (2) KR101829309B1 (enExample)
TW (2) TWI605567B (enExample)
WO (1) WO2011089841A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101829309B1 (ko) 2010-01-22 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101885691B1 (ko) 2010-07-27 2018-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101856722B1 (ko) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5886128B2 (ja) * 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
CN102842885B (zh) * 2011-06-22 2017-07-21 富泰华工业（深圳）有限公司 保护电路及具有保护电路的电子装置
JP5825744B2 (ja) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 パワー絶縁ゲート型電界効果トランジスタ
US9112037B2 (en) * 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20130207102A1 (en) * 2012-02-15 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5975907B2 (ja) * 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
US9312390B2 (en) 2012-07-05 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Remote control system
WO2014065343A1 (en) * 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293544B2 (en) * 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI624936B (zh) * 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
KR20210079411A (ko) 2013-06-27 2021-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10529740B2 (en) 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
JP2015188062A (ja) 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
US20150263140A1 (en) * 2014-03-14 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6541398B2 (ja) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
US9722090B2 (en) * 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
US10355475B2 (en) * 2014-08-15 2019-07-16 Navitas Semiconductor, Inc. GaN overvoltage protection circuit
JP6693885B2 (ja) * 2014-11-20 2020-05-13 株式会社半導体エネルギー研究所 半導体装置
KR102315333B1 (ko) 2015-02-04 2021-10-19 삼성전자주식회사 회로 디자인 시스템 및 이를 이용한 반도체 회로
US9818880B2 (en) * 2015-02-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP2017055338A (ja) * 2015-09-11 2017-03-16 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN110730984B (zh) * 2017-06-08 2021-12-03 夏普株式会社 有源矩阵基板和显示装置
JP6878173B2 (ja) * 2017-06-26 2021-05-26 株式会社ジャパンディスプレイ 半導体装置
TWI653799B (zh) 2017-09-27 2019-03-11 瑞昱半導體股份有限公司 能夠避免過電壓之損害的電路
KR102605008B1 (ko) 2018-01-24 2023-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
US11063465B2 (en) * 2018-01-30 2021-07-13 Novatel Inc. Switching mode front end surge protection circuit
TWI660564B (zh) 2018-06-01 2019-05-21 杰力科技股份有限公司 電壓轉換電路及其控制電路
JP7122872B2 (ja) * 2018-06-06 2022-08-22 株式会社ジャパンディスプレイ 半導体装置
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
KR102098492B1 (ko) * 2018-09-10 2020-04-08 동국대학교 산학협력단 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를 포함하는 다이오드
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
WO2020240331A1 (ja) 2019-05-31 2020-12-03 株式会社半導体エネルギー研究所 半導体装置、および当該半導体装置を備えた無線通信装置
JP7444436B2 (ja) * 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
TWI859917B (zh) * 2023-06-08 2024-10-21 日商豊田合成股份有限公司 氮化物半導體裝置
JP2025124470A (ja) * 2024-02-14 2025-08-26 ミネベアパワーデバイス株式会社 半導体装置

Family Cites Families (190)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0346277A (ja) * 1989-07-14 1991-02-27 Hitachi Ltd 半導体装置およびその製造方法
JP2805888B2 (ja) * 1989-09-14 1998-09-30 セイコーエプソン株式会社 薄膜トランジスタ
JP3286843B2 (ja) * 1990-04-11 2002-05-27 セイコーエプソン株式会社 液晶パネル
JP3024620B2 (ja) * 1990-04-11 2000-03-21 セイコーエプソン株式会社 液晶パネルの製造方法
JP2502787B2 (ja) * 1990-04-27 1996-05-29 シャープ株式会社 Ｍｏｓ型薄膜トランジスタの製造方法
JPH053320A (ja) * 1990-08-10 1993-01-08 Fuji Xerox Co Ltd 薄膜半導体装置
JPH04106938A (ja) * 1990-08-27 1992-04-08 Nec Corp 薄膜電界効果型トランジスタ
JP3079566B2 (ja) * 1990-11-28 2000-08-21 富士通株式会社 薄膜トランジスタとその製造方法
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH06132530A (ja) * 1992-10-20 1994-05-13 Fujitsu Ltd 薄膜トランジスタマトリクス
US5376584A (en) * 1992-12-31 1994-12-27 International Business Machines Corporation Process of making pad structure for solder ball limiting metallurgy having reduced edge stress
JP3019650B2 (ja) * 1993-02-08 2000-03-13 カシオ計算機株式会社 フォトセンサ
US5402081A (en) * 1993-10-12 1995-03-28 Advanced Micro Devices, Inc. Input buffer circuit with improved speed performance
US5510747A (en) * 1993-11-30 1996-04-23 Siliconix Incorporated Gate drive technique for a bidirectional blocking lateral MOSFET
JP4293434B2 (ja) * 1994-08-31 2009-07-08 株式会社半導体エネルギー研究所 液晶表示装置
CA2208762C (en) * 1995-01-19 2003-03-18 Litton Systems (Canada) Limited Flat panel imaging system
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP3441238B2 (ja) * 1995-06-02 2003-08-25 株式会社東芝 出力回路
KR100394896B1 (ko) 1995-08-03 2003-11-28 코닌클리케 필립스 일렉트로닉스 엔.브이. 투명스위칭소자를포함하는반도체장치
JP3368124B2 (ja) * 1995-10-26 2003-01-20 キヤノン株式会社 過充電防止回路
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP2785801B2 (ja) * 1996-04-05 1998-08-13 日本電気株式会社 多結晶シリコン薄膜トランジスタおよびその製造方法
JP3092553B2 (ja) * 1997-09-24 2000-09-25 日本電気株式会社 絶縁ゲート型電界効果トランジスタ
JP3298483B2 (ja) * 1997-12-24 2002-07-02 日本電気株式会社 高耐圧ｍｏｓｆｅｔの製造方法
US5959488A (en) * 1998-01-24 1999-09-28 Winbond Electronics Corp. Dual-node capacitor coupled MOSFET for improving ESD performance
JPH11233783A (ja) * 1998-02-17 1999-08-27 Sharp Corp 薄膜トランジスタおよびその製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP4850326B2 (ja) 1999-03-26 2012-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6399988B1 (en) 1999-03-26 2002-06-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having lightly doped regions
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP2001251772A (ja) * 2000-03-03 2001-09-14 Tokin Corp 半導体双方向スイッチ素子を用いた充放電保護装置
US6510033B1 (en) * 2000-06-30 2003-01-21 Intel Corporation RC-timer circuit to reduce current leakage in future semiconductor processes
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP2002151700A (ja) * 2000-11-15 2002-05-24 Fujitsu Ltd 薄膜トランジスタ
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3987303B2 (ja) * 2001-06-06 2007-10-10 株式会社半導体エネルギー研究所 表示装置
JP2003008024A (ja) * 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及び半導体装置及び表示装置
JP5038560B2 (ja) * 2001-08-01 2012-10-03 ゲットナー・ファンデーション・エルエルシー 電界効果型トランジスタ及びその製造方法並びに該トランジスタを使った液晶表示装置及びその製造方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP2004087682A (ja) 2002-08-26 2004-03-18 Chi Mei Electronics Corp 薄膜トランジスタ、画像表示素子および画像表示装置
JP4085762B2 (ja) * 2002-09-20 2008-05-14 セイコーエプソン株式会社 半導体薄膜の製造方法、半導体装置の製造方法及び薄膜トランジスタの製造方法
US6867957B1 (en) * 2002-10-09 2005-03-15 Pericom Semiconductor Corp. Stacked-NMOS-triggered SCR device for ESD-protection
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP2004226890A (ja) 2003-01-27 2004-08-12 Fujitsu Display Technologies Corp 液晶表示装置とその製造方法
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005084416A (ja) * 2003-09-09 2005-03-31 Sharp Corp アクティブマトリクス基板およびそれを用いた表示装置
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US20070194379A1 (en) 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7642573B2 (en) 2004-03-12 2010-01-05 Hewlett-Packard Development Company, L.P. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
JP4543315B2 (ja) * 2004-09-27 2010-09-15 カシオ計算機株式会社 画素駆動回路及び画像表示装置
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
EP1815530B1 (en) 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
EP2453480A2 (en) 2004-11-10 2012-05-16 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
AU2005302963B2 (en) 2004-11-10 2009-07-02 Cannon Kabushiki Kaisha Light-emitting device
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI412138B (zh) 2005-01-28 2013-10-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
JP4887646B2 (ja) 2005-03-31 2012-02-29 凸版印刷株式会社 薄膜トランジスタ装置及びその製造方法並びに薄膜トランジスタアレイ及び薄膜トランジスタディスプレイ
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
US7537976B2 (en) * 2005-05-20 2009-05-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor
JP5116251B2 (ja) * 2005-05-20 2013-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4870403B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
CN101278403B (zh) 2005-10-14 2010-12-01 株式会社半导体能源研究所 半导体器件及其制造方法
JP5427340B2 (ja) 2005-10-14 2014-02-26 株式会社半導体エネルギー研究所 半導体装置
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
JP4560505B2 (ja) * 2005-11-08 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
CN101667544B (zh) 2005-11-15 2012-09-05 株式会社半导体能源研究所 半导体器件及其制造方法
JP5099740B2 (ja) * 2005-12-19 2012-12-19 財団法人高知県産業振興センター 薄膜トランジスタ
JP5111758B2 (ja) * 2005-12-19 2013-01-09 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ
US7314801B2 (en) 2005-12-20 2008-01-01 Palo Alto Research Center Incorporated Semiconductor device having a surface conducting channel and method of forming
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
JP2007200817A (ja) 2006-01-30 2007-08-09 Furukawa Electric Co Ltd:The 電源用スイッチング装置
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP4761454B2 (ja) 2006-02-23 2011-08-31 セイコーインスツル株式会社 充放電保護回路および電源装置
JP5167560B2 (ja) 2006-03-31 2013-03-21 日本化薬株式会社 電界効果トランジスタ
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
JP2007287732A (ja) * 2006-04-12 2007-11-01 Mitsubishi Electric Corp 薄膜トランジスタ、その製造方法、及び表示装置
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
TWI336945B (en) 2006-06-15 2011-02-01 Au Optronics Corp Dual-gate transistor and pixel structure using the same
KR101217555B1 (ko) 2006-06-28 2013-01-02 삼성전자주식회사 접합 전계 효과 박막 트랜지스터
US7491575B2 (en) * 2006-08-02 2009-02-17 Xerox Corporation Fabricating zinc oxide semiconductor using hydrolysis
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5116277B2 (ja) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR20080052107A (ko) 2006-12-07 2008-06-11 엘지전자 주식회사 산화물 반도체층을 구비한 박막 트랜지스터
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
KR101453829B1 (ko) * 2007-03-23 2014-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
US7633164B2 (en) 2007-04-10 2009-12-15 Tohoku University Liquid crystal display device and manufacturing method therefor
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
JP5043499B2 (ja) * 2007-05-02 2012-10-10 財団法人高知県産業振興センター 電子素子及び電子素子の製造方法
JP5294651B2 (ja) 2007-05-18 2013-09-18 キヤノン株式会社 インバータの作製方法及びインバータ
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
ATE490560T1 (de) * 2007-05-31 2010-12-15 Canon Kk Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiter
JP2009010142A (ja) 2007-06-27 2009-01-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体で構成されたｈｆｅｔおよびその製造方法
JP4682173B2 (ja) * 2007-07-12 2011-05-11 株式会社日立製作所 電圧駆動型半導体素子のドライブ回路及びインバータ装置
US7626790B2 (en) * 2007-10-05 2009-12-01 Smartech Worldwide Limited Electrostatic discharge protection for a circuit capable of handling high input voltage
JP5561899B2 (ja) * 2007-10-19 2014-07-30 キヤノン株式会社 表示装置の製造方法
JP2009117619A (ja) 2007-11-06 2009-05-28 Idemitsu Kosan Co Ltd 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
CN103258857B (zh) 2007-12-13 2016-05-11 出光兴产株式会社 使用了氧化物半导体的场效应晶体管及其制造方法
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
US8586979B2 (en) * 2008-02-01 2013-11-19 Samsung Electronics Co., Ltd. Oxide semiconductor transistor and method of manufacturing the same
JP2009200891A (ja) * 2008-02-22 2009-09-03 Fuji Electric Holdings Co Ltd ゲート駆動回路
JP5388632B2 (ja) 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
KR101496148B1 (ko) 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
KR101510212B1 (ko) * 2008-06-05 2015-04-10 삼성전자주식회사 산화물 반도체 박막 트랜지스터의 제조방법
JP2010003766A (ja) * 2008-06-18 2010-01-07 Fujifilm Corp 電磁波検出素子
JP5510767B2 (ja) * 2008-06-19 2014-06-04 出光興産株式会社 薄膜トランジスタおよびその製造方法
TWI469354B (zh) * 2008-07-31 2015-01-11 Semiconductor Energy Lab 半導體裝置及其製造方法
US8343822B2 (en) * 2008-08-04 2013-01-01 Panasonic Corporation Flexible semiconductor device and method for manufacturing same
KR101542840B1 (ko) * 2008-09-09 2015-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US8384439B2 (en) * 2008-11-28 2013-02-26 Samsung Electronics Co., Ltd. Semiconductor devices and methods of fabricating the same
US8367486B2 (en) * 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
KR101608887B1 (ko) * 2009-04-17 2016-04-05 삼성전자주식회사 인버터와 그 제조방법 및 인버터를 포함하는 논리회로
TWI512997B (zh) 2009-09-24 2015-12-11 Semiconductor Energy Lab 半導體裝置，電源電路，和半導體裝置的製造方法
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101800852B1 (ko) * 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8422180B2 (en) * 2009-12-17 2013-04-16 Faraday Technology Corp. High-voltage-tolerant ESD clamp circuit with low leakage current fabricated by low-voltage CMOS process
KR101829309B1 (ko) 2010-01-22 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9568794B2 (en) * 2010-12-20 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device
US9466618B2 (en) * 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same

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