KR100384260B1 - 반도체장치 및 그 제조방법 - Google Patents
반도체장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR100384260B1 KR100384260B1 KR10-2001-0022093A KR20010022093A KR100384260B1 KR 100384260 B1 KR100384260 B1 KR 100384260B1 KR 20010022093 A KR20010022093 A KR 20010022093A KR 100384260 B1 KR100384260 B1 KR 100384260B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor
- bumps
- adhesive layer
- semiconductor chip
- forming
- Prior art date
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Classifications
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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Abstract
Description
Claims (25)
- 반도체칩;상기 반도체칩의 전극 위에 제공된 스터드범프; 및상기 반도체칩의 상기 전극이 형성되는 표면에 제공된 접착층을 포함하며,상기 스터드범프는 상기 접착층의 표면으로부터 돌출한 반도체장치.
- 제1항에 있어서, 열압착을 통해 접합된 개재기를 더 포함하는 반도체장치.
- 반도체칩;상기 반도체칩의 전극이 형성되는 표면에 제공된 보호수지층;상기 반도체칩의 상기 전극 위에 제공되며 상기 보호수지층의 표면에서는 노출되는 범프; 및경화플럭스를 통해 상기 보호수지층의 상기 표면에 접착되고, 상기 범프에 전기적으로 접속되는 개재기를 포함하는 반도체장치.
- 제2항에 있어서, 상기 개재기에는 장치홀이 제공된 반도체장치.
- 반도체칩;상기 반도체칩의 전극이 형성되는 표면에 제공된 접착층;상기 반도체칩의 상기 전극 위에 제공되고 상기 접착층의 표면에서는 노출되는 범프;상기 접착층의 상기 표면에 접착되고 상기 범프에 부분적으로 접착된 배선패턴; 및상기 배선패턴을 절연하고 덮으며 선택적으로 개구되어 외부접속부를 형성하는 절연덮개층을 포함하는 반도체장치.
- 반도체칩;상기 반도체칩의 전극이 형성되는 표면에 제공된 보호수지층;상기 반도체칩의 상기 전극 위에 제공되고 상기 보호수지층의 표면에서는 노출되는 범프;경화된 플럭스를 통해 상기 보호수지층의 상기 표면에 접착되고 상기 범프에 부분적으로 접착되는 배선패턴; 및상기 배선패턴을 절연하고 덮으며 선택적으로 개구되어 외부접속부를 형성하는 절연덮개층을 포함하는 반도체장치.
- 각각의 반도체디바이스가 반도체칩, 상기 반도체칩의 전극이 형성되는 표면에 제공된 접착층, 상기 반도체칩의 상기 전극 위에 제공되며 상기 접착층의 표면에서는 부분적으로 노출되는 범프를 구비한 두 개 이상의 반도체디바이스들을 포함하고,상기 반도체디바이스들 중의 하나의 상기 접착층이 제공된 표면의 일부는 상기 반도체디바이스들 중의 다른 하나의 상기 접착층이 제공된 표면의 일부 또는 전부에 접합되고, 그것들은 접착면에서 상기 범프들을 사용하여 서로 전기적으로 접속되는 반도체장치.
- 각각의 반도체디바이스가 앞면 및 뒷면에 전극들이 형성된 반도체칩, 상기 반도체칩의 앞면 및 뒷면에 제공된 접착층, 및 상기 반도체칩의 상기 전극 위에 제공되며 상기 접착층의 표면에서는 부분적으로 노출되는 범프를 구비한 두 개 이상의 반도체디바이스들을 포함하고,상기 반도체디바이스들 중의 하나는 아래쪽에 있는 상기 반도체디바이스들 중의 하나에 상기 접착층을 통해 접착되고, 그 전극들은 상기 범프를 통해 서로 접속되는 반도체장치.
- 제1항에 있어서, 상기 접착층은 접착성을 갖는 열가소성수지인 반도체장치.
- 기설정된 수의 반도체칩들을 반도체웨이퍼 위에 형성하고 상기 반도체칩들의 각각의 전극 위에 범프를 제공하는 단계;상기 범프가 제공된 표면에 접착층을 형성하는 단계;상기 접착층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계; 및상기 반도체칩들의 각각으로 분리하기 위해 상기 반도체웨이퍼를 절단하는단계를 포함하는 반도체장치 제조방법.
- 기설정된 수의 반도체칩들을 반도체웨이퍼 위에 형성하고 상기 반도체칩들의 각각의 전극 위에 범프를 제공하는 단계;상기 범프가 제공된 표면에 접착층을 형성하는 단계;상기 접착층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 반도체칩들의 각각으로 분리하기 위해 상기 반도체웨이퍼를 절단하는 단계; 및하나 또는 둘 이상의 상기 반도체칩들을 단일 배선기판 위에 실장하고, 상기 접착층을 이용한 상기 배선기판에 대한 접착과 상기 범프를 이용한 상기 배선기판에 대한 전기접속을 위해 가열 및 프레싱을 수행하는 단계를 포함하는 반도체장치 제조방법.
- 기설정된 수의 반도체칩들을 반도체웨이퍼 위에 형성하고 상기 반도체칩들의 각각의 전극 위에 범프를 제공하는 단계;상기 범프가 제공된 표면에 보호수지층을 형성하는 단계;상기 보호수지층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 반도체칩들의 각각으로 분리하기 위해 상기 반도체웨이퍼를 절단하는 단계; 및하나 또는 둘 이상의 상기 반도체칩들에 대해, 상기 범프 및 상기 보호수지층 또는 대응하는 배선기판에 열경화플럭스를 도포하는 단계;상기 범프를 상기 배선기판의 배선 위에 배치시키는 단계; 및가열을 수행하여 상기 범프를 상기 배선에 납땜하고 상기 열경화플럭스를 경화시키는 단계를 포함하는 반도체장치 제조방법.
- 기설정된 수의 반도체칩들을 반도체웨이퍼 위에 형성하고 상기 반도체칩들의 각각의 전극 위에 범프를 제공하는 단계;상기 범프가 제공된 표면에 접착층을 형성하는 단계;상기 접착층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계; 및상기 반도체웨이퍼를 상기 접착층을 통해 배선기판에 접합하고 상기 반도체칩들의 각각으로 분리하기 위해 상기 반도체칩을 그것의 외부경계를 따라 절단하는 단계를 포함하는 반도체장치 제조방법.
- 기설정된 수의 반도체칩들을 반도체웨이퍼 위에 형성하고 상기 반도체칩들의 각각의 전극 위에 범프를 제공하는 단계;상기 범프가 제공된 표면에 접착층을 형성하는 단계;상기 접착층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 접착층을 이용하여 상기 반도체웨이퍼를 배선기판과 정렬하고, 상기 접착층을 이용하여 상기 배선기판에 대한 접착과 상기 범프를 이용한 상기 배선기판 위의 배선에 대한 전기접속을 위해 가열 및 프레싱을 수행하는 단계; 및상기 반도체칩들의 각각으로 분리하기 위해 상기 반도체칩을 그것의 외부경계를 따라 절단하는 단계를 포함하는 반도체장치 제조방법.
- 기설정된 수의 반도체칩들을 반도체웨이퍼 위에 형성하고 상기 반도체칩들의 각각의 전극 위에 범프를 제공하는 단계;상기 범프가 제공된 표면에 보호수지층을 형성하는 단계;상기 보호수지층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 범프 및 상기 보호수지층 또는 대응하는 배선기판에 열경화플럭스를 도포하는 단계;상기 범프를 상기 배선기판의 배선 위에 배치시키는 단계; 및상기 반도체칩들의 각각으로 분리하기 위해 상기 반도체칩을 그것의 외부경계를 따라 절단하는 단계를 포함하는 반도체장치 제조방법.
- 범프를 반도체칩의 전극 위에 제공하는 단계;상기 범프가 제공된 표면에 접착층을 형성하는 단계;상기 접착층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 반도체칩을 상기 접착층을 통해 금속박(metal foil)에 접합하는 단계; 및상기 금속박을 배선패턴으로 형성하는 단계를 포함하는 반도체장치 제조방법.
- 범프를 반도체칩의 전극 위에 제공하는 단계;상기 범프가 제공된 표면에 접착층을 형성하는 단계;상기 접착층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 접착층을 통해 상기 반도체웨이퍼를 금속박과 정렬하고, 상기 접착층을 이용한 상기 금속박에 대한 접착과 상기 범프를 이용한 상기 금속박에 대한 전기접속을 위해 가열 및 프레싱을 수행하는 단계; 및상기 금속박을 배선패턴으로 형성하는 단계를 포함하는 반도체장치 제조방법.
- 범프를 반도체칩의 전극 위에 제공하는 단계;상기 범프가 제공된 표면에 보호수지층을 형성하는 단계;상기 보호수지층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 보호수지층을 통하여 상기 반도체웨이퍼를 금속박과 정렬하는 단계;가열을 수행하여 상기 범프를 상기 금속박에 납땜하고 열경화플럭스를 경화시키는 단계; 및상기 금속박을 배선패턴으로 형성하는 단계를 포함하는 반도체장치 제조방법.
- 기설정된 수의 반도체칩들을 반도체웨이퍼 위에 형성하고 상기 반도체칩들의각각의 전극 위에 범프를 제공하는 단계;상기 범프가 제공된 표면에 접착층을 형성하는 단계;상기 접착층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 반도체웨이퍼를 상기 접착층을 통해 금속박에 접합하는 단계;상기 금속박을 배선패턴으로 형성하는 단계; 및그 후, 상기 반도체칩들의 각각으로 분리하기 위해 상기 반도체칩을 그것의 외부경계를 따라 절단하는 단계를 포함하는 반도체장치 제조방법.
- 기설정된 수의 반도체칩들을 반도체웨이퍼 위에 형성하고 상기 반도체칩들의 각각의 전극 위에 범프를 제공하는 단계;상기 범프가 제공된 표면에 접착층을 형성하는 단계;상기 접착층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 접착층을 통해 상기 반도체웨이퍼를 금속박과 정렬하고, 상기 접착층을 이용한 상기 금속박에 대한 접착과 상기 범프를 이용한 상기 금속박에 대한 전기접속을 위해 가열 및 프레싱을 수행하는 단계;상기 금속박을 배선패턴으로 형성하는 단계; 및그 후, 상기 반도체칩들의 각각으로 분리하기 위해 상기 반도체칩을 그것의 외부경계를 따라 절단하는 단계를 포함하는 반도체장치 제조방법.
- 기설정된 수의 반도체칩들을 반도체웨이퍼 위에 형성하고 상기 반도체칩들의각각의 전극 위에 범프를 제공하는 단계;상기 범프가 제공된 표면에 보호수지층을 형성하는 단계;상기 보호수지층의 전체 표면을 상기 범프가 돌출할 때까지 식각하는 단계;상기 보호수지층을 통해 상기 반도체웨이퍼를 금속박과 정렬하는 단계;가열을 수행하여 상기 범프를 상기 금속박에 납땜하고 상기 보호수지층을 경화시키는 단계;상기 금속박을 배선패턴으로 형성하는 단계; 및그 후, 상기 반도체칩들의 각각으로 분리하기 위해 상기 반도체칩을 그것의 외부경계를 따라 절단하는 단계를 포함하는 반도체장치 제조방법.
- 제16항에 있어서, 상기 금속박이 배선패턴으로 형성된 후, 상기 배선패턴 위에 절연덮개층을 선택적으로 형성하는 단계를 더 포함하는 반도체장치 제조방법.
- 제22항에 있어서, 상기 절연덮개층이 상기 배선패턴 위에 선택적으로 형성된 후, 상기 절연덮개층의 개구를 통해 노출된 상기 배선패턴의 랜드부 위에 땜납볼을 제공하는 단계를 더 포함하는 반도체장치 제조방법.
- 제10항에 있어서, 상기 접착층은 접착성을 갖는 열가소성 수지인 반도체장치 제조방법.
- 반도체칩;상기 반도체칩의 전극이 형성된 표면에 제공된 접착층;상기 반도체칩의 상기 전극 위에 제공되며 상기 접착층의 표면에서는 노출된 범프;테이프기판; 및개재기를 포함하고,상기 반도체칩은 상기 테이프기판의 앞면에 상기 접착층을 이용하여 접착되며, 상기 반도체칩은 상기 범프를 이용하여 상기 테이프기판에 전기적으로 접속되고, 상기 개재기는 전기접속 가능하도록 상기 테이프기판의 뒷면에 접속되는 반도체장치 제조방법.
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US20020132463A1 (en) | 2002-09-19 |
KR20010104626A (ko) | 2001-11-26 |
US20010036711A1 (en) | 2001-11-01 |
TW501208B (en) | 2002-09-01 |
EP1150347A2 (en) | 2001-10-31 |
JP3597754B2 (ja) | 2004-12-08 |
SG100674A1 (en) | 2003-12-26 |
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