JP2005064239A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】 本発明に係る半導体装置の製造方法は、
表面に回路が形成された半導体ウエハの回路面に、基材と該基材から剥離可能で接着性の樹脂層とからなる樹脂シートを貼付するとともに、該樹脂シートの外縁部をリングフレームで固定し、
該半導体ウエハを、回路毎に個別のチップに切断分離するとともに、樹脂層をチップと同形状に切断し、
個別のチップを樹脂層とともに基材からピックアップし、
個別のチップを該樹脂層を介して、チップ搭載用基板の所定位置に載置し、
該個別のチップと該チップ搭載用基板との導通を確保しながら該個別のチップを該チップ搭載用基板に接着固定することを特徴としている。
【選択図】 図2
Description
(1)ICチップとチップ搭載用基板とを金線等を用いて接続し、その後樹脂封止する。
(2)導通用突起物が形成されているチップ搭載用基板にICチップを載置し、導通用突起物を介してICチップとチップ搭載用基板とを接続し、その後樹脂封止する。
(3)異方導電性フィルムあるいは異方導電性ペーストを介してICチップとチップ搭載用基板とを接続し、その後樹脂封止する。
該半導体ウエハを、回路毎に個別のチップに切断分離し、
該個別のチップを該接着性薄膜層を介して、チップ搭載用基板の所定位置に載置し、
該個別のチップと該チップ搭載用基板との導通を確保しながら該個別のチップを該チップ搭載用基板に接着固定することを特徴とする半導体装置の製造方法。」が開示されている。
表面に回路が形成された半導体ウエハの回路面に、基材と該基材から剥離可能で接着性の樹脂層とからなる樹脂シートを貼付するとともに、該樹脂シートの外縁部をリングフレームで固定し、
該半導体ウエハを、回路毎に個別のチップに切断分離するとともに、樹脂層をチップと同形状に切断し、
個別のチップを樹脂層とともに基材からピックアップし、
個別のチップを該樹脂層を介して、チップ搭載用基板の所定位置に載置し、
該個別のチップと該チップ搭載用基板との導通を確保しながら該個別のチップを該チップ搭載用基板に接着固定することを特徴としている。
半導体ウエハ1を、回路毎に個別のチップ8に切断分離するとともに、樹脂層5をチップと同形状に切断する(図2)。
以下本発明を実施例により説明するが、本発明はこれら実施例に限定されるものではない。
(実施例1)
バインダー樹脂となるアクリル樹脂(ブチルアクリレート50重量部とメチルメタクリレート10重量部とグリシジルメタクリレート20重量部と2−ヒドロキシエチルアクリレート20重量部とを共重合してなる重量平均分子量85万、ガラス転移温度−26℃の共重合体)20重量部と、エネルギー線重合性化合物としてジペンタエリスリトールヘキサアクリレート(分子量578)10重量部と、光重合開始剤としてα−ヒドロキシシクロヘキシルフェニルケトン0.3重量部と、エポキシ樹脂として液状ビスフェノールA型エポキシ樹脂(エポキシ当量:190)を25重量部と固形ビスフェノールA型エポキシ樹脂(エポキシ当量:850)を35重量部と固形o-クレゾールノボラック型エポキシ樹脂(エポキシ当量:190)を20重量部と、熱活性型潜在性エポキシ樹脂硬化剤としてジシアンジアミド2重量部と、2−フェニル−4,5−ヒドロキシメチルイミダゾール2重量部と、芳香族ポリイソシアナート0.5重量部とからなる粘接着剤組成物を、基材として表面張力35 mN/mのポリエチレンフィルム(厚さ:100μm)に塗布・乾燥し、厚さ50μmの絶縁性の粘接着剤層を有する樹脂シートを得た。
2,10…導通用突起物
3…樹脂シート
4…基材
5…樹脂層
6…リングフレーム
7…リングフレーム固定用粘着シート
8…チップ
9…チップ搭載用基板
Claims (2)
- 表面に回路が形成された半導体ウエハの回路面に、基材と該基材から剥離可能で接着性の樹脂層とからなる樹脂シートを貼付するとともに、該樹脂シートの外縁部をリングフレームで固定し、
該半導体ウエハを、回路毎に個別のチップに切断分離するとともに、樹脂層をチップと同形状に切断し、
個別のチップを樹脂層とともに基材からピックアップし、
個別のチップを該樹脂層を介して、チップ搭載用基板の所定位置に載置し、
該個別のチップと該チップ搭載用基板との導通を確保しながら該個別のチップを該チップ搭載用基板に接着固定することを特徴とする半導体装置の製造方法。 - 該樹脂層が絶縁性の粘接着剤からなり、チップの回路上および/またはチップ搭載用基板上に導通用突起物を形成し、該樹脂層を加熱または加圧により流動化させて該導通用突起物を介してチップとチップ搭載用基板との間に導通を確保し、その後樹脂層を硬化させることを特徴とする請求項1に記載の半導体装置の製造方法。
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