JP5973374B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5973374B2 JP5973374B2 JP2013082819A JP2013082819A JP5973374B2 JP 5973374 B2 JP5973374 B2 JP 5973374B2 JP 2013082819 A JP2013082819 A JP 2013082819A JP 2013082819 A JP2013082819 A JP 2013082819A JP 5973374 B2 JP5973374 B2 JP 5973374B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- layer
- electrode layer
- transistor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
- Dram (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013082819A JP5973374B2 (ja) | 2012-04-13 | 2013-04-11 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012091539 | 2012-04-13 | ||
| JP2012091539 | 2012-04-13 | ||
| JP2013082819A JP5973374B2 (ja) | 2012-04-13 | 2013-04-11 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016139046A Division JP6324440B2 (ja) | 2012-04-13 | 2016-07-14 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013236072A JP2013236072A (ja) | 2013-11-21 |
| JP2013236072A5 JP2013236072A5 (enExample) | 2015-03-05 |
| JP5973374B2 true JP5973374B2 (ja) | 2016-08-23 |
Family
ID=49324274
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013082819A Active JP5973374B2 (ja) | 2012-04-13 | 2013-04-11 | 半導体装置 |
| JP2016139046A Active JP6324440B2 (ja) | 2012-04-13 | 2016-07-14 | 半導体装置 |
| JP2018037375A Active JP6574861B2 (ja) | 2012-04-13 | 2018-03-02 | 半導体装置 |
| JP2019149744A Active JP6777796B2 (ja) | 2012-04-13 | 2019-08-19 | 半導体装置 |
| JP2020170218A Active JP7075975B2 (ja) | 2012-04-13 | 2020-10-08 | 半導体装置 |
| JP2022080126A Active JP7393110B2 (ja) | 2012-04-13 | 2022-05-16 | 半導体装置 |
| JP2023198706A Active JP7791868B2 (ja) | 2012-04-13 | 2023-11-23 | 半導体装置 |
| JP2025129423A Active JP7760795B2 (ja) | 2012-04-13 | 2025-08-01 | 半導体装置 |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016139046A Active JP6324440B2 (ja) | 2012-04-13 | 2016-07-14 | 半導体装置 |
| JP2018037375A Active JP6574861B2 (ja) | 2012-04-13 | 2018-03-02 | 半導体装置 |
| JP2019149744A Active JP6777796B2 (ja) | 2012-04-13 | 2019-08-19 | 半導体装置 |
| JP2020170218A Active JP7075975B2 (ja) | 2012-04-13 | 2020-10-08 | 半導体装置 |
| JP2022080126A Active JP7393110B2 (ja) | 2012-04-13 | 2022-05-16 | 半導体装置 |
| JP2023198706A Active JP7791868B2 (ja) | 2012-04-13 | 2023-11-23 | 半導体装置 |
| JP2025129423A Active JP7760795B2 (ja) | 2012-04-13 | 2025-08-01 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (9) | US8946702B2 (enExample) |
| JP (8) | JP5973374B2 (enExample) |
| KR (6) | KR102254731B1 (enExample) |
| SG (1) | SG10201610711UA (enExample) |
| TW (3) | TWI629794B (enExample) |
| WO (1) | WO2013154195A1 (enExample) |
Families Citing this family (72)
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| KR102254731B1 (ko) | 2012-04-13 | 2021-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN104285302B (zh) | 2012-05-10 | 2017-08-22 | 株式会社半导体能源研究所 | 半导体装置 |
| JP2014027263A (ja) | 2012-06-15 | 2014-02-06 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9349593B2 (en) | 2012-12-03 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2014103901A1 (en) | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI618252B (zh) | 2013-02-12 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9231111B2 (en) | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9318484B2 (en) | 2013-02-20 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
| US9893192B2 (en) | 2013-04-24 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9455349B2 (en) * | 2013-10-22 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor with reduced impurity diffusion |
| WO2015060133A1 (en) * | 2013-10-22 | 2015-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9590111B2 (en) | 2013-11-06 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| US9601634B2 (en) * | 2013-12-02 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2016027597A (ja) * | 2013-12-06 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9349751B2 (en) * | 2013-12-12 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9627413B2 (en) | 2013-12-12 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| TWI666770B (zh) | 2013-12-19 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102472875B1 (ko) * | 2013-12-26 | 2022-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9472678B2 (en) * | 2013-12-27 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102529174B1 (ko) | 2013-12-27 | 2023-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102325158B1 (ko) * | 2014-01-30 | 2021-11-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법 |
| JP6308583B2 (ja) * | 2014-01-31 | 2018-04-11 | 国立研究開発法人物質・材料研究機構 | 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置 |
| US20150263140A1 (en) * | 2014-03-14 | 2015-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2017103260A (ja) * | 2014-03-31 | 2017-06-08 | 株式会社東芝 | トランジスタ、および、トランジスタの製造方法 |
| JP2015204368A (ja) * | 2014-04-14 | 2015-11-16 | 日本放送協会 | 薄膜トランジスタおよび表示装置 |
| TWI663726B (zh) | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
| KR20220069118A (ko) * | 2014-07-15 | 2022-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치 |
| KR20160034200A (ko) * | 2014-09-19 | 2016-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| US9634097B2 (en) | 2014-11-25 | 2017-04-25 | Sandisk Technologies Llc | 3D NAND with oxide semiconductor channel |
| US20160155759A1 (en) * | 2014-11-28 | 2016-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
| TWI732383B (zh) | 2015-02-06 | 2021-07-01 | 日商半導體能源研究所股份有限公司 | 裝置及其製造方法以及電子裝置 |
| JP6683503B2 (ja) | 2015-03-03 | 2020-04-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| JP6705663B2 (ja) * | 2015-03-06 | 2020-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| KR102582523B1 (ko) | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| KR20160114511A (ko) | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
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| CN104779258A (zh) * | 2015-04-16 | 2015-07-15 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
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| CN115857237A (zh) | 2016-09-12 | 2023-03-28 | 株式会社半导体能源研究所 | 显示装置及电子设备 |
| DE112017004841B4 (de) * | 2016-09-27 | 2025-04-17 | Sharp Kabushiki Kaisha | Halbleitervorrichtung und Verfahren zu deren Herstellung |
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| CN109863470A (zh) * | 2016-10-25 | 2019-06-07 | 株式会社半导体能源研究所 | 显示装置、显示模块、电子设备及触摸屏输入系统 |
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| JP2019067938A (ja) * | 2017-10-02 | 2019-04-25 | シャープ株式会社 | 薄膜トランジスタ |
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| JP7444436B2 (ja) | 2020-02-05 | 2024-03-06 | 三国電子有限会社 | 液晶表示装置 |
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