JP5875515B2 - プラズマグリッド注入装置及びイオン注入方法 - Google Patents
プラズマグリッド注入装置及びイオン注入方法 Download PDFInfo
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- JP5875515B2 JP5875515B2 JP2012517699A JP2012517699A JP5875515B2 JP 5875515 B2 JP5875515 B2 JP 5875515B2 JP 2012517699 A JP2012517699 A JP 2012517699A JP 2012517699 A JP2012517699 A JP 2012517699A JP 5875515 B2 JP5875515 B2 JP 5875515B2
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Description
プラズマをチャンバのプラズマ領域に供給するステップと、複数の開口を有し、第1の位置に配置された第1のグリッドプレートを、正にバイアスするステップと、複数の開口を有し、第1の位置に配置された第2のグリッドプレートを、負にバイアスするステップと、プラズマ領域のプラズマからのイオンを、正にバイアスされた第1のグリッドプレートの開口を通して流すステップと、正にバイアスされた第1のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、負にバイアスされた第2のグリッドプレートの開口を通して流すステップと、負にバイアスされた第2のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、基板ホルダにより支持されて第1の位置に配置された基板に注入するステップと、第1のグリッドプレート、第2のグリッドプレート及び基板ホルダーのうちの少なくとも1つの位置を、第2の位置に調整するステップと、第2の位置に調整の後、プラズマ領域にプラズマを供給し、プラズマ領域のプラズマからのイオンを、正にバイアスされた第1のグリッドプレートの開口を通して流すステップと、第2の位置に調整の後、正にバイアスされた第1のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、負にバイアスされた第2のグリッドプレートの開口を通して流すステップと、第2の位置に調整の後、負にバイアスされた第2のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、基板に注入するステップとを有し、 第1の位置は、基板ホルダ上の基板全体で1回の横方向の均一イオン注入を可能にする位置であり、第1の位置において実行される注入は、基板全体で1回の横方向の均一イオン注入を形成し、該1回の横方向の均一イオン注入は、第2のグリッドプレートの異なる開口を通過して均一ビームに空間電荷拡大によって結合されたイオンの組合せから形成され、第2の位置は、基板ホルダ上の基板の複数回の横方向に間隔を空けられた別々のイオン注入を可能にする位置であり、第2の位置において実行される注入は、基板の複数回の横方向に間隔を空けられた別々のイオン注入を形成し、該複数回の横方向に間隔を空けられた別々のイオン注入は、イオンビームレットの焦点を基板上の既知の形状に合わせるために第2のグリッドプレートの異なる開口を通過したイオンから形成されることを特徴とする。
Ip=(D・Ze(1+γSE)A)/(fΔt・T)×a×b
ここで、典型的なプラズマシステムを考える:
D=ドーズ量[cm−2]
f=パルス周波数[s]
t=パルス幅[μs]
Ip=ピーク電流[A]
T=注入時間[s]
Z=荷電状態
e=電子電荷[A−s]
γSE=二次電子放出係数
A=表面積[cm−2]
a=ドーパントの理論混合比
b=プラズマ中のラジカルの分子比
一具体例として、PH3のガス、1E16cm−2のドーズ量、0.25のドーパントの理論混合比及び0.3のプラズマ中のラジカルの分子比を与える。
Claims (42)
- プラズマをプラズマ領域に供給するプラズマ源と、
電源によって正にバイアスされ、プラズマ領域からのイオンが通過することができる複数の開口を有する第1のグリッドプレートと、
電源によって負にバイアスされ、上記第1のグリッドプレートを通過した後のイオンが通過することができる複数の開口を有する第2のグリッドプレートと、
接地され、上記第2のグリッドプレートを通過した後のイオンが通過することができる複数の開口を有する第3のグリッドプレートと、
基板を、ドーピングして太陽電池を製造するために、上記第3のグリッドプレートを通過した後のイオンを注入する基板の位置に支持する基板ホルダとを備え、
上記第3のグリッドプレートは、上記第2のグリッドプレートと上記基板ホルダとの間に配置され、
上記第1のグリッドプレート、上記第2のグリッドプレート及び上記第3のグリッドプレートは、グリッドプレートアセンブリを形成し、
上記グリッドプレートアセンブリ及び上記基板ホルダのうちの少なくとも1つの位置は、均一注入位置と選択注入位置の間に調整され、
上記均一注入位置は、上記基板ホルダ上の基板全体で1回の横方向の均一イオン注入を可能にする位置であり、該1回の横方向の均一イオン注入は、上記第3のグリッドプレートの異なる開口を通過して均一ビームに空間電荷拡大によって結合されたビームレットの組合せから形成され、
上記選択注入位置は、上記基板ホルダ上の基板の複数回の横方向に間隔を空けられた別々のイオン注入を可能にする位置であり、該複数回の横方向に間隔を空けられた別々のイオン注入は、上記第3のグリッドプレートの異なる開口を通過した個々のイオンビームレットから形成され、
上記グリッドプレートアセンブリは、ビームレットの焦点を基板上の既知の形状に合わせ、それによって、選択注入を形成することを特徴とするプラズマグリッド注入装置。 - 上記第1のグリッドプレート及び上記第2のグリッドプレートのうちの少なくとも1つの開口は、略丸穴であることを特徴とする請求項1記載のプラズマグリッド注入装置。
- 上記第1のグリッドプレート及び上記第2のグリッドプレートのうちの少なくとも1つの開口は、細長いスロットであることを特徴とする請求項1記載のプラズマグリッド注入装置。
- 上記第1のグリッドプレート及び上記第2のグリッドプレートのうちの少なくとも1つの開口のそれぞれは、上端部と、下端部とを有し、該下端部は、該上端部よりも上記基板ホルダに近く、
上記各開口の直径は、上記上端部から上記下端部に向かって徐々に拡大することを特徴とする請求項1記載のプラズマグリッド注入装置。 - 上記第1のグリッドプレート及び上記第2のグリッドプレートは、シリコン、グラファイト、シリコンカーバイド及びタングステンを含むグループから選択された材料からなることを特徴とする請求項1記載のプラズマグリッド注入装置。
- チャンバ壁によって画定され、上記プラズマ領域、上記第1のグリッドプレート及び上記第2のグリッドプレートを収容するチャンバを更に備え、
上記チャンバ壁は、イオンを、電界を用いて上記プラズマ領域に反発することを特徴とする請求項1記載のプラズマグリッド注入装置。 - 上記チャンバ壁には1つ以上の磁石が設けられていることを特徴とする請求項6記載のプラズマグリッド注入装置。
- プラズマをチャンバのプラズマ領域に供給するステップと、
複数の開口を有し、第1の位置に配置された第1のグリッドプレートを、正にバイアスするステップと、
複数の開口を有し、第1の位置に配置された第2のグリッドプレートを、負にバイアスするステップと、
上記プラズマ領域のプラズマからのイオンを、上記正にバイアスされた第1のグリッドプレートの開口を通して流すステップと、
上記正にバイアスされた第1のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、上記負にバイアスされた第2のグリッドプレートの開口を通して流すステップと、
上記負にバイアスされた第2のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、基板ホルダにより支持されて第1の位置に配置された基板に注入するステップと、
上記第1のグリッドプレート、上記第2のグリッドプレート及び上記基板ホルダーのうちの少なくとも1つの位置を、第2の位置に調整するステップと、
上記第2の位置に調整の後、上記プラズマ領域にプラズマを供給し、上記プラズマ領域のプラズマからのイオンを、上記正にバイアスされた第1のグリッドプレートの開口を通して流すステップと、
上記第2の位置に調整の後、上記正にバイアスされた第1のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、上記負にバイアスされた第2のグリッドプレートの開口を通して流すステップと、
上記第2の位置に調整の後、上記負にバイアスされた第2のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、基板に注入するステップとを有し、
上記第1の位置は、上記基板ホルダ上の基板全体で1回の横方向の均一イオン注入を可能にする位置であり、上記第1の位置において実行される上記注入は、上記基板全体で1回の横方向の均一イオン注入を形成し、該1回の横方向の均一イオン注入は、上記第2のグリッドプレートの異なる開口を通過して均一ビームに空間電荷拡大によって結合されたイオンの組合せから形成され、
上記第2の位置は、上記基板ホルダ上の基板の複数回の横方向に間隔を空けられた別々のイオン注入を可能にする位置であり、上記第2の位置において実行される上記注入は、上記基板の複数回の横方向に間隔を空けられた別々のイオン注入を形成し、該複数回の横方向に間隔を空けられた別々のイオン注入は、イオンビームレットの焦点を基板上の既知の形状に合わせるために上記第2のグリッドプレートの異なる開口を通過したイオンから形成されることを特徴とするイオン注入方法。 - 複数の開口が形成されたシャドウマスクが、上記基板から所定の距離離れて配置されており、
上記負にバイアスされた第2のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、上記基板に注入する前に、上記シャドウマスクの開口を通して流すステップを更に有することを特徴とする請求項8記載のイオン注入方法。 - 複数の開口が形成されたフォトレジストマスクが、上記基板に接触して配置されており、
上記負にバイアスされた第2のグリッドプレートの開口を通して流されたイオンの少なくとも一部を、上記基板に注入する前に、上記フォトレジストマスクの開口を通して流すステップを更に有することを特徴とする請求項8記載のイオン注入方法。 - 上記第1のグリッドプレート及び上記第2のグリッドプレートのうちの少なくとも1つの開口は、略丸穴であることを特徴とする請求項8記載のイオン注入方法。
- 上記第1のグリッドプレート及び上記第2のグリッドプレートのうちの少なくとも1つの開口は、細長いスロットであることを特徴とする請求項8記載のイオン注入方法。
- 上記第1のグリッドプレート及び上記第2のグリッドプレートのうちの少なくとも1つの開口のそれぞれは、上端部と、下端部とを有し、該下端部は、該上端部よりの上記基板ホルダに近く、
上記各開口の直径は、上記上端部から上記下端部に向かって徐々に拡大することを特徴とする請求項8記載のイオン注入方法。 - 上記第1のグリッドプレート及び上記第2のグリッドプレートは、シリコン、グラファイト、シリコンカーバイド及びタングステンを含むグループから選択された材料からなることを特徴とする請求項8記載のイオン注入方法。
- 上記プラズマ領域、上記第1のグリッドプレート及び上記第2のグリッドプレートは、チャンバ壁によって画定されるチャンバに収容され、
上記チャンバ壁は、イオンを、電界を用いて上記プラズマ領域に反発することを特徴とする請求項8記載のイオン注入方法。 - 上記プラズマにパルス電圧を印加するステップを更に有することを特徴とする請求項8記載のイオン注入方法。
- 上記基板にパルス電圧を印加するステップを更に有することを特徴とする請求項8記載のイオン注入方法。
- 上記パルス電圧は、上記基板上の複数の異なる位置に向けられることを特徴とする請求項17記載のイオン注入方法。
- 上記基板にイオンを注入する前に、該基板を、第1の複数の区分排気ステージを通過させるステップと、
上記第1の複数の区分排気ステージから、上記基板を注入ステージに直接渡すステップと、
上記基板にイオンを注入した後、上記注入ステージから、該基板を、第2の複数の区分排気ステージに直接渡し、該基板を該第2の複数の区分排気ステージを通過させるステップとを有し、
上記第1の複数の区分排気ステージの各ステージは、該第1の複数の区分排気ステージの前のステージよりも圧力が低く、
上記第2の複数の区分排気ステージの各ステージは、該第2の複数の区分排気ステージの前のステージよりも圧力が高く、
上記注入ステージは、上記第1の複数の及び上記第2の複数の区分排気ステージの全てのステージよりも圧力が低いことを特徴とする請求項8記載のイオン注入方法。 - プラズマを供給するプラズマ源と、
上記プラズマからのイオンが通過することができる複数の開口をそれぞれ有する複数のグリッドプレートを有するグリッドアセンブリと、
基板を、上記グリッドプレートの複数の開口を通過した後のイオンを注入する位置に支持する基板ホルダとを備え、
上記基板ホルダ及び上記グリッドプレートのうちの少なくとも1つは、均一注入位置と選択注入位置の間に調整され、
上記均一注入位置は、上記基板が上記グリッドプレートからより遠くに配置され、それによって、上記基板ホルダ上の基板全体で1回の横方向の均一イオン注入を可能にする位置であり、該1回の横方向の均一イオン注入は、上記グリッドプレートの異なる開口を通過して均一ビームに空間電荷拡大によって結合されたイオンの組合せから形成され、
上記選択注入位置は、上記基板が上記グリッドプレートのより近くに配置され、それによって、上記基板ホルダ上の基板の複数回の横方向に間隔を空けられた別々のイオン注入を可能にする位置であり、該複数回の横方向に間隔を空けられた別々のイオン注入は、イオンビームレットの焦点を基板上の既知の形状に合わせるために上記グリッドプレートの異なる開口を通過したイオンから形成されることを特徴とするプラズマグリッド注入装置。 - 上記複数のグリッドプレートは、
プラズマ領域のプラズマからのイオンが通過することができる複数の開口を有する第1のグリッドプレートと、
上記第1のグリッドプレートを通過した後のイオンが通過することができる複数の開口を有する第2のグリッドプレートとを含むことを特徴とする請求項20記載のプラズマグリッド注入装置。 - 上記第1のグリッドプレートは、電源によって、DCモードで連続的に、あるいはパルスモードで、正にバイアスされることを特徴とする請求項21記載のプラズマグリッド注入装置。
- 上記第2のグリッドプレートは、電源によって、DCモードで連続的に、あるいはパルスモードで、負にバイアスされることを特徴とする請求項22記載のプラズマグリッド注入装置。
- 上記複数のグリッドプレートは、上記第2のグリッドプレートを通過した後のイオンが通過することができる複数の開口を有する第3のグリッドプレートを更に含むことを特徴とする請求項23記載のプラズマグリッド注入装置。
- 上記第3のグリッドプレートは、接地されていることを特徴とする請求項24記載のプラズマグリッド注入装置。
- 上記第1のグリッドプレート、上記第2のグリッドプレート及び上記基板ホルダは、全てそれらが調整される位置を有することを特徴とする請求項21記載のプラズマグリッド注入装置。
- プラズマをチャンバのプラズマ領域に供給するステップと、
複数の開口をそれぞれ有する複数のグリッドプレートを有するグリッドアセンブリを配置するステップと、
上記複数のグリッドプレートのそれぞれが第1の位置にある間に、上記プラズマ領域のプラズマからのイオンの第1のセットを、上記グリッドアセンブリのグリッドプレートのそれぞれの開口を通して流すステップと、
基板が基板ホルダによって第1の位置に支持されている間に、上記グリッドプレートの開口を通して流されたイオンの第1のセットの少なくとも一部を、該基板に均一に注入し、それによって、同じグリッドプレートの異なる開口を通過したイオンの第1のセットの組合せから、基板全体で1回の横方向の均一イオン注入を形成するステップと、
上記基板又は上記グリッドプレートの少なくとも1つの位置を、第2の位置に調整するステップと、
上記第2の位置の調整の後、上記プラズマ領域のプラズマからのイオンの第2のセットを、上記グリッドアセンブリのグリッドプレートのそれぞれの開口を通して流すステップと、
イオンビームレットの焦点を基板上の既知の形状に合わせるために上記第2の位置の調整の後、上記グリッドプレートの開口を通して流されたイオンの第2のセットの少なくとも一部を、上記基板に選択的に注入し、それによって、同じグリッドプレートの異なる開口を通過したイオンの第2のセットの一部から、該基板の複数回の横方向に間隔を空けられた別々のイオン注入を形成するステップとを有することを特徴とするイオン注入方法。 - 上記調整するステップでは、上記基板の位置を調整することを特徴とする請求項27記載のイオン注入方法。
- 上記基板の位置を調整することは、該基板を上記グリッドアセンブリに近づけることであることを特徴とする請求項28記載のイオン注入方法。
- 上記調整するステップでは、上記グリッドプレートのうちの1つの位置を調整することを特徴とする請求項27記載のイオン注入方法。
- 上記グリッドプレートのうちの1つの位置を調整することは、該グリッドプレートのうちの1つを上記基板に近づけることであることを特徴とする請求項30記載のイオン注入方法。
- 上記複数のグリッドプレートは、正にバイアスされた第1のグリッドプレートと、負にバイアスされた第2のグリッドプレートとを含むことを特徴とする請求項27記載のイオン注入方法。
- 上記複数のグリッドプレートは、接地された第3のグリッドプレートを更に含むことを特徴とする請求項32記載のイオン注入方法。
- プラズマ領域に第1の単一種類のドーパント材料を供給するステップと、
上記プラズマ源において、上記第1の単一種類のドーパント材料を、第1の複数のドーパント種に分解するステップと、
上記第1の複数のドーパント種を基板に注入するステップとを有することを特徴とする請求項13記載のイオン注入方法。 - 上記基板は、1回の注入ステップで、上記第1の複数のドーパント種が注入されることを特徴とする請求項34記載のイオン注入方法。
- 上記ドーパント種のそれぞれは、上記基板に異なる深さで注入されることを特徴とする請求項34記載のイオン注入方法。
- 上記第1の単一種類のドーパント材料は、フォスフィンであることを特徴とする請求項34記載のイオン注入方法。
- 上記第1の複数のドーパント種は、P+、P++、P+++、P2+、P3+及びP5+を含むことを特徴とする請求項37記載のイオン注入方法。
- 上記第1の単一種類のドーパント材料は、ホウ素又はヒ素であることを特徴とする請求項34記載のイオン注入方法。
- 第2の単一種類のドーパント材料が、上記プラズマ発生器に供給され、
上記プラズマ発生器は、上記第1の単一種類のドーパント材料を上記第1の複数のドーパント種に分解するのと同じ期間中に、上記第2の単一種類のドーパント材料を第2の複数のドーパント種に分解し、
上記第2の複数のドーパント種は、上記第1の複数のドーパント種が上記基板に注入されているのと同じ期間中に、該基板に注入されることを特徴とする請求項34記載のイオン注入方法。 - 上記第1の単一種類のドーパント材料及び上記第2の単一種類のドーパント材料は、それぞれ前駆体ガスであることを特徴とする請求項40記載のイオン注入方法。
- 上記第1の単一種類のドーパント材料は、アルシンであり、上記第2の単一種類のドーパント材料は、フォスフィンであることを特徴とする請求項41記載のイオン注入方法。
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2010
- 2010-06-22 US US12/821,053 patent/US8749053B2/en active Active
- 2010-06-23 KR KR1020117030721A patent/KR101434886B1/ko not_active IP Right Cessation
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- 2010-06-23 EP EP12164231.8A patent/EP2489757A3/en not_active Withdrawn
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- 2010-06-23 CN CN201080025312.8A patent/CN102804329B/zh not_active Expired - Fee Related
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US9741894B2 (en) | 2009-06-23 | 2017-08-22 | Intevac, Inc. | Ion implant system having grid assembly |
US9875922B2 (en) | 2011-11-08 | 2018-01-23 | Intevac, Inc. | Substrate processing system and method |
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US20120129325A1 (en) | 2012-05-24 |
CN102804329B (zh) | 2015-07-08 |
US8749053B2 (en) | 2014-06-10 |
WO2011005582A1 (en) | 2011-01-13 |
US20120125259A1 (en) | 2012-05-24 |
SG176547A1 (en) | 2012-01-30 |
EP2489757A2 (en) | 2012-08-22 |
US10636935B2 (en) | 2020-04-28 |
US9303314B2 (en) | 2016-04-05 |
US8997688B2 (en) | 2015-04-07 |
US8697552B2 (en) | 2014-04-15 |
KR20120034664A (ko) | 2012-04-12 |
SG196827A1 (en) | 2014-02-13 |
US20150072461A1 (en) | 2015-03-12 |
EP2489757A3 (en) | 2016-01-06 |
CN102804329A (zh) | 2012-11-28 |
US9741894B2 (en) | 2017-08-22 |
EP2446458A1 (en) | 2012-05-02 |
KR101434886B1 (ko) | 2014-08-28 |
US20100323508A1 (en) | 2010-12-23 |
EP2446458A4 (en) | 2015-07-22 |
US20160181465A1 (en) | 2016-06-23 |
HK1176740A1 (en) | 2013-08-02 |
US20170345964A1 (en) | 2017-11-30 |
JP2012531520A (ja) | 2012-12-10 |
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