JP4326895B2 - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
- Publication number
- JP4326895B2 JP4326895B2 JP2003332605A JP2003332605A JP4326895B2 JP 4326895 B2 JP4326895 B2 JP 4326895B2 JP 2003332605 A JP2003332605 A JP 2003332605A JP 2003332605 A JP2003332605 A JP 2003332605A JP 4326895 B2 JP4326895 B2 JP 4326895B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- wafer
- reaction vessel
- cathodes
- generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 239000003989 dielectric material Substances 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 238000005513 bias potential Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 62
- 239000010408 film Substances 0.000 description 24
- 230000007935 neutral effect Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004143 HfON Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
Description
[実施形態1]
[実施形態2]
[実施形態3]
11a〜11e カソード
12 ウェハーホルダ
15 下部電極
18 マグネット
19 rf発生器
Claims (4)
- 反応容器と、
前記反応容器内に設置した回転可能なウェハーホルダーと、
前記反応容器内に設置した複数のカソードであって、前記ウェハーホルダーに対し、傾斜したカソードと、
前記カソードに接続した第1RF発生器と、
前記第1RF発生器と前記カソードとの間に直列接続させて設置した整合回路と、
ガス導入部とガス排出部を含む圧力制御機構と、
前記ウェハーホルダーに組み込まれた下部電極と、
を備え、前記反応容器内にプラズマを発生するように為したイオン化物理的気相成膜装置であって、
前記下部電極は、非接地、非RF接続状態、および非DC接続状態を有し、前記下部電極上のウェハーは電気的に浮遊状態にあり、前記圧力制御機構は、前記反応容器内の内部圧力を5Pa(パスカル)より高い圧力に制御し、前記プラズマが前記第1RF発生器のRF電力の容量的結合によって生成されるとき、選択されたカソードの上に負の自己バイアス電圧が生成し、前記カソードから放出されたスパッタ原子をイオン化し、前記負バイアス電位により加速するように為した、ことを特徴とするスパッタリング装置。 - 前記カソードは、前記第1RF発生器と、さらに、DC電流源とに接続されている、ことを特徴とする請求項1記載のスパッタリング装置。
- 前記カソードは、High−k誘電体材料をターゲットとして備えている、ことを特徴とする請求項2記載のスパッタリング装置。
- 前記High−k誘電体材料は、HfSiONであることを特徴とする請求項3に記載のスパッタリング装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003332605A JP4326895B2 (ja) | 2003-09-25 | 2003-09-25 | スパッタリング装置 |
US10/949,335 US20050115827A1 (en) | 2003-09-25 | 2004-09-27 | Multi-cathode ionized physical vapor deposition system |
US12/405,820 US20090194413A1 (en) | 2003-09-25 | 2009-03-17 | Multi-cathode ionized physical vapor deposition system |
US12/405,801 US20090194412A1 (en) | 2003-09-25 | 2009-03-17 | Multi-cathode ionized physical vapor deposition system |
US12/405,845 US20090178920A1 (en) | 2003-09-25 | 2009-03-17 | Multi-cathode ionized physical vapor deposition system |
US12/405,775 US20090178917A1 (en) | 2003-09-25 | 2009-03-17 | Method of sputtering a high-k dielectric material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003332605A JP4326895B2 (ja) | 2003-09-25 | 2003-09-25 | スパッタリング装置 |
Related Child Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008263350A Division JP4871339B2 (ja) | 2008-10-10 | 2008-10-10 | スパッタリング方法 |
JP2008263377A Division JP2009052145A (ja) | 2008-10-10 | 2008-10-10 | スパッタリング装置 |
JP2008263360A Division JP2009030176A (ja) | 2008-10-10 | 2008-10-10 | スパッタリング装置 |
JP2009000097A Division JP5069255B2 (ja) | 2009-01-05 | 2009-01-05 | スパッタリング装置及びスパッタリング方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005097672A JP2005097672A (ja) | 2005-04-14 |
JP2005097672A5 JP2005097672A5 (ja) | 2008-08-28 |
JP4326895B2 true JP4326895B2 (ja) | 2009-09-09 |
Family
ID=34460852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003332605A Expired - Fee Related JP4326895B2 (ja) | 2003-09-25 | 2003-09-25 | スパッタリング装置 |
Country Status (2)
Country | Link |
---|---|
US (5) | US20050115827A1 (ja) |
JP (1) | JP4326895B2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7504185B2 (en) * | 2005-10-03 | 2009-03-17 | Asahi Glass Company, Limited | Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography |
US20100140083A1 (en) * | 2006-10-26 | 2010-06-10 | Hauzer Techno Coating Bv | Dual Magnetron Sputtering Power Supply And Magnetron Sputtering Apparatus |
US7935393B2 (en) * | 2007-08-07 | 2011-05-03 | Tokyo Electron Limited | Method and system for improving sidewall coverage in a deposition system |
WO2009052874A1 (en) * | 2007-10-26 | 2009-04-30 | Hauzer Techno Coating Bv | Dual magnetron sputtering power supply and magnetron sputtering apparatus |
WO2010038593A1 (ja) * | 2008-09-30 | 2010-04-08 | キヤノンアネルバ株式会社 | ハードバイアス積層体の成膜装置および成膜方法、並びに磁気センサ積層体の製造装置および製造方法 |
CN102439196A (zh) * | 2009-04-27 | 2012-05-02 | Oc欧瑞康巴尔斯公司 | 具有多个溅射源的反应溅射 |
US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
JP5655865B2 (ja) * | 2011-01-12 | 2015-01-21 | 日新電機株式会社 | プラズマ装置 |
KR101249262B1 (ko) * | 2011-02-22 | 2013-04-02 | 한국과학기술연구원 | 투명도전 조성물 및 타겟, 이를 이용한 투명도전 박막 및 그 제조방법 |
JP2015038236A (ja) * | 2013-08-19 | 2015-02-26 | アイシン精機株式会社 | 金属調皮膜の製造方法 |
JP6515665B2 (ja) * | 2015-05-07 | 2019-05-22 | 東京エレクトロン株式会社 | 基板処理装置 |
US20200135464A1 (en) * | 2018-10-30 | 2020-04-30 | Applied Materials, Inc. | Methods and apparatus for patterning substrates using asymmetric physical vapor deposition |
US20230304140A1 (en) * | 2020-11-06 | 2023-09-28 | Takashi Iizuka | Film-forming device, film-forming unit, and film-forming method |
KR20230033053A (ko) * | 2021-08-26 | 2023-03-08 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
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-
2003
- 2003-09-25 JP JP2003332605A patent/JP4326895B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-27 US US10/949,335 patent/US20050115827A1/en not_active Abandoned
-
2009
- 2009-03-17 US US12/405,820 patent/US20090194413A1/en not_active Abandoned
- 2009-03-17 US US12/405,845 patent/US20090178920A1/en not_active Abandoned
- 2009-03-17 US US12/405,775 patent/US20090178917A1/en not_active Abandoned
- 2009-03-17 US US12/405,801 patent/US20090194412A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20050115827A1 (en) | 2005-06-02 |
JP2005097672A (ja) | 2005-04-14 |
US20090178917A1 (en) | 2009-07-16 |
US20090194413A1 (en) | 2009-08-06 |
US20090178920A1 (en) | 2009-07-16 |
US20090194412A1 (en) | 2009-08-06 |
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