JP2005097672A - マルチカソードイオン化物理的気相成膜装置 - Google Patents
マルチカソードイオン化物理的気相成膜装置 Download PDFInfo
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- 238000005240 physical vapour deposition Methods 0.000 title claims abstract description 18
- 230000007246 mechanism Effects 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000013077 target material Substances 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 67
- 239000010408 film Substances 0.000 description 23
- 238000004544 sputter deposition Methods 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- -1 HfO 2 Chemical class 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
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Abstract
【解決手段】 本装置は次のように構成される。ウェハーホルダ12がその中心軸周りに回転するようにされて底壁に設けられ、かつウェハーホルダ上に配置されたウェハーに対して少なくとも2つの傾斜されたカソード11a〜11dが上壁に設けられる反応容器10を備え、カソードの各々はrf発生器から整合回路を介してrf電流が供給され、ガス導入部とガス排出部を含む圧力制御機構を備える。当該装置において、反応容器の内部圧力は圧力制御機構によって相対的に高い圧力となるように制御されている。
【選択図】 図1
Description
さらに上記の装置において、例えばHfO2,Si3N4,Al2O3およびHfのごとき誘電体物質または金属であり、それらは共同スパッタリングの間、ウェハーの上で他の誘電体物質を形成するように共に反応するものであり、そこでは2つまたはそれ以上のカソードは同時にrfまたはDC電圧を与えられる。
[実施形態1]
[実施形態2]
[実施形態3]
11a〜11e カソード
12 ウェハーホルダ
15 下部電極
18 マグネット
19 rf発生器
Claims (8)
- その底壁にウェハーホルダがその中心軸周りに回転するように設けられ、かつ、前記ウェハーホルダ上に配置されたウェハーに対して、その上壁に少なくとも2つの傾斜されたカソードが設けられた反応容器を備え、
前記カソードの各々は整合回路を介してrf発生器からrf電流を供給され、
そして、ガス導入部とガス排出部を含む圧力制御機構を備え、
上記において、前記反応容器の内部圧力は前記圧力制御機構によって相対的に高い圧力になるように制御されるマルチカソードイオン化物理的気相成膜装置。 - 前記上壁の中央部にさらにウェハーに平行な中央カソードを備える請求項1記載のマルチカソードイオン化物理的気相成膜装置。
- さらに、前記カソードの各々にDC電圧を供給するDC源を備える請求項1または2記載のマルチカソードイオン化物理的気相成膜装置。
- 前記カソードの1つまたは多くはrf電流に加えてDC電流が供給される請求項1または2記載のマルチカソードイオン化物理的気相成膜装置。
- ウェハーホルダがその中心軸の周りに回転するように底壁に設けられ、かつ少なくとも2つの傾斜カソードが前記ウェハーホルダの上に配置されたウェハーに対して上壁に設けられた反応容器を備え、
前記カソードの各々にはDC源からDC電圧が供給され、
ガス導入部とガス排出部を含む圧力制御機構と、前記上壁の中央部にウェハーに平行な中央カソードとを備え、
上記において、前記反応容器の内部圧力は前記圧力制御機構によって相対的に低い圧力に制御されているマルチカソードイオン化物理的気相成膜装置。 - 前記カソードのいずれのターゲット物質はHfO2またはHfSiONのごとき高誘電率を有する物質である請求項1〜5に記載されたマルチカソードイオン化物理的気相成膜装置。
- 前記カソードのターゲット物質はHfO2,Si3N4,Al2O3およびHfのごとき誘電体物質または金属であり、それらは共に、2以上のカソードが同時にrf電圧またはDC電圧を与えられる共同スパッタリングの間、ウェハー上に異なった誘電体物質を形成する請求項1〜5に記載されたマルチカソードイオン化物理的気相成膜装置。
- 各々の前記カソードはその外側表面にマグネット配列を有し、それによりカソード表面を貫きかつ前記反応容器の内部に到達する磁力線が生成される請求項1〜7に記載のマルチカソードイオン化物理的気相成膜装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003332605A JP4326895B2 (ja) | 2003-09-25 | 2003-09-25 | スパッタリング装置 |
US10/949,335 US20050115827A1 (en) | 2003-09-25 | 2004-09-27 | Multi-cathode ionized physical vapor deposition system |
US12/405,820 US20090194413A1 (en) | 2003-09-25 | 2009-03-17 | Multi-cathode ionized physical vapor deposition system |
US12/405,845 US20090178920A1 (en) | 2003-09-25 | 2009-03-17 | Multi-cathode ionized physical vapor deposition system |
US12/405,801 US20090194412A1 (en) | 2003-09-25 | 2009-03-17 | Multi-cathode ionized physical vapor deposition system |
US12/405,775 US20090178917A1 (en) | 2003-09-25 | 2009-03-17 | Method of sputtering a high-k dielectric material |
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JP2003332605A JP4326895B2 (ja) | 2003-09-25 | 2003-09-25 | スパッタリング装置 |
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JP2008263377A Division JP2009052145A (ja) | 2008-10-10 | 2008-10-10 | スパッタリング装置 |
JP2008263350A Division JP4871339B2 (ja) | 2008-10-10 | 2008-10-10 | スパッタリング方法 |
JP2008263360A Division JP2009030176A (ja) | 2008-10-10 | 2008-10-10 | スパッタリング装置 |
JP2009000097A Division JP5069255B2 (ja) | 2009-01-05 | 2009-01-05 | スパッタリング装置及びスパッタリング方法 |
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JP2005097672A true JP2005097672A (ja) | 2005-04-14 |
JP2005097672A5 JP2005097672A5 (ja) | 2008-08-28 |
JP4326895B2 JP4326895B2 (ja) | 2009-09-09 |
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Cited By (4)
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WO2010038593A1 (ja) * | 2008-09-30 | 2010-04-08 | キヤノンアネルバ株式会社 | ハードバイアス積層体の成膜装置および成膜方法、並びに磁気センサ積層体の製造装置および製造方法 |
JP4858539B2 (ja) * | 2005-10-03 | 2012-01-18 | 旭硝子株式会社 | Euvリソグラフィ用マスクブランクの多層膜の成膜方法、およびeuvリソグラフィ用マスクブランクの製造方法 |
JP5655865B2 (ja) * | 2011-01-12 | 2015-01-21 | 日新電機株式会社 | プラズマ装置 |
JP2016213033A (ja) * | 2015-05-07 | 2016-12-15 | 東京エレクトロン株式会社 | 基板処理装置 |
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JP5174825B2 (ja) * | 2006-10-26 | 2013-04-03 | ハウザー テクノ−コーティング ベー.フェー. | デュアルマグネトロンスパッタリング電源およびマグネトロンスパッタリング装置 |
US7935393B2 (en) * | 2007-08-07 | 2011-05-03 | Tokyo Electron Limited | Method and system for improving sidewall coverage in a deposition system |
WO2009052874A1 (en) * | 2007-10-26 | 2009-04-30 | Hauzer Techno Coating Bv | Dual magnetron sputtering power supply and magnetron sputtering apparatus |
JP2012525492A (ja) * | 2009-04-27 | 2012-10-22 | オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト | 複数スパッタ源を有する反応性スパッタリング |
US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
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JP2015038236A (ja) * | 2013-08-19 | 2015-02-26 | アイシン精機株式会社 | 金属調皮膜の製造方法 |
US20200135464A1 (en) * | 2018-10-30 | 2020-04-30 | Applied Materials, Inc. | Methods and apparatus for patterning substrates using asymmetric physical vapor deposition |
CN116438326B (zh) * | 2020-11-06 | 2024-04-12 | 饭塚贵嗣 | 成膜装置、成膜单元和成膜方法 |
KR20230033053A (ko) * | 2021-08-26 | 2023-03-08 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
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-
2004
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-
2009
- 2009-03-17 US US12/405,801 patent/US20090194412A1/en not_active Abandoned
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Cited By (4)
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JP4858539B2 (ja) * | 2005-10-03 | 2012-01-18 | 旭硝子株式会社 | Euvリソグラフィ用マスクブランクの多層膜の成膜方法、およびeuvリソグラフィ用マスクブランクの製造方法 |
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JP5655865B2 (ja) * | 2011-01-12 | 2015-01-21 | 日新電機株式会社 | プラズマ装置 |
JP2016213033A (ja) * | 2015-05-07 | 2016-12-15 | 東京エレクトロン株式会社 | 基板処理装置 |
Also Published As
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US20090178917A1 (en) | 2009-07-16 |
US20090178920A1 (en) | 2009-07-16 |
US20090194413A1 (en) | 2009-08-06 |
US20050115827A1 (en) | 2005-06-02 |
JP4326895B2 (ja) | 2009-09-09 |
US20090194412A1 (en) | 2009-08-06 |
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