JP5782241B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5782241B2 JP5782241B2 JP2010226531A JP2010226531A JP5782241B2 JP 5782241 B2 JP5782241 B2 JP 5782241B2 JP 2010226531 A JP2010226531 A JP 2010226531A JP 2010226531 A JP2010226531 A JP 2010226531A JP 5782241 B2 JP5782241 B2 JP 5782241B2
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Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Description
本実施の形態では、画素部とその周辺に酸化物半導体を用いた半導体素子が形成された表示装置の一態様について図1(A)及び図1(B)を用いて説明する。
本実施の形態では、本実施の形態1で説明した表示装置の画素部の作製工程について、図4及び図5を用いて説明する。なお、図4及び図5における断面A1−A2、断面B1−B2、断面C1−C2、及び断面D1−D2は、図2(A)におけるA1−A2、B1−B2、C1−C2、及びD1−D2の鎖線で示した部位の断面図である。
膜を高純度化することができる。これにより、電気特性が良好で信頼性のよい薄膜トランジスタを形成することができる。
本実施の形態では、実施の形態1において図1で示した表示装置30について、ゲート駆動回路91またはソース駆動回路92に用いられる薄膜トランジスタの構成の一例を示す。
本実施の形態では、半導体層に酸化物半導体膜を適用した半導体素子を用いた保護回路について、図9及び図10を用いて説明する。また、絶縁膜を介して形成された異なる共通配線同士を接続する接続部の構成について図11を用いて説明する。
本実施の形態では、実施の形態1において図1で示した表示装置について、ゲート端子部7のゲート信号線端子及びソース端子部8のソース信号線端子の構成の一例を示す。
本実施の形態では、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、薄膜トランジスタを駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
半導体装置の一形態として電子ペーパーの例を示す。
半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本明細書に開示する半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図24及び図25に示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラやデジタルビデオカメラなどのカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
本実施の形態では、半導体装置の一形態として、実施の形態1で示す薄膜トランジスタを有する表示装置の例を図29乃至図32を用いて説明する。本実施の形態は、表示素子として液晶素子を用いた液晶表示装置の例を図29乃至図32を用いて説明する。図29乃至図32の液晶表示装置に用いられるTFT628、629は、実施の形態1及び実施の形態2で示す薄膜トランジスタを適用することができ、実施の形態2で示す工程で同様に作製できる電気特性及び信頼性の高い薄膜トランジスタである。TFT628及びTFT629は、酸化物半導体層をチャネル形成領域とする薄膜トランジスタである。図29乃至図32では、薄膜トランジスタの一例として図1に示す薄膜トランジスタを用いる場合について説明するが、これに限定されるものではない。
本実施の形態では、薄膜トランジスタを有する第1の基板と、対向基板となる第2の基板とを貼り合わせる表示パネルの作製例について以下に説明する。
本実施の形態では、実施の形態2で説明した、In−Ga−Zn−O系酸化物半導体膜を薄膜トランジスタの活性層として用いたチャネルエッチ構造の薄膜トランジスタにおいて、ソース電極またはドレイン電極として用いる金属膜と、In−Ga−Zn−O系酸化物半導体膜との界面近傍において、インジウムの濃度が他の領域よりも高い層(Inリッチな層)と酸化チタン膜(TiOX)が形成される現象について、計算科学により検証した。
8 ソース端子部
20 ゲート配線
21 端子
22 端子
23 端子
24 端子
25 端子
26 端子
27 端子
30 表示装置
44 共通配線
45 共通配線
45a ゲート配線
45b ゲート配線
46 共通配線
60 ソース配線
65 共通配線
65a ソース配線
65b ソース配線
71 端子
74 端子
75 端子
81 端子
84 端子
85 端子
91 ゲート駆動回路
92 ソース駆動回路
93 画素
94 画素領域
95 接続部
96 共通接続部
97 保護回路
100 基板
101 絶縁膜
102 絶縁層
102a 絶縁層
102b 絶縁層
111a ゲート配線
111b ゲート配線
113 半導体層
115a 電極
115b 電極
115c 電極
117 絶縁層
118 絶縁層
119 絶縁層
125 コンタクトホール
126 コンタクトホール
127 コンタクトホール
128 コンタクトホール
170a 非線形素子
170b 非線形素子
200 基板
201 絶縁層
202 ゲート配線
203 ゲート配線
204 絶縁層
204a 絶縁層
204b 絶縁層
205 半導体層
207 電極層
207a 電極
207b 電極
208 絶縁層
208a 絶縁層
208b 絶縁層
209 ソース配線
210 ソース配線
211 絶縁層
212 電極
213 保持容量配線
214 保持容量配線
216 開口部
217 開口部
225 チャネル保護層
250 薄膜トランジスタ
251 薄膜トランジスタ
252 薄膜トランジスタ
300 基板
351 ゲート配線
351a ゲート配線
351b ゲート配線
352 電極
354 ソース配線
354a ソース配線
354b ソース配線
355 透明導電層
360 絶縁層
361 絶縁層
362 絶縁層
363 絶縁層
364 絶縁層
365 絶縁層
400 基板
401a ゲート配線
401b ゲート配線
403a 半導体層
403b 半導体層
404 コンタクトホール
405a 電極
405b 電極
405c 電極
410 絶縁層
411 絶縁層
412 絶縁層
413 絶縁層
414 絶縁層
415 絶縁層
430a 薄膜トランジスタ
430b 薄膜トランジスタ
580 基板
581 薄膜トランジスタ
582 絶縁層
583 絶縁層
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
591 絶縁層
592 絶縁層
594 キャビティ
595 充填材
596 基板
597 絶縁層
598 絶縁層
599a ソース配線
599b ソース配線
600 基板
601 対向基板
602 ゲート配線
602a ゲート配線
602b ゲート配線
603 ゲート配線
603a ゲート配線
603b ゲート配線
604 容量配線
604a 容量配線
604b 容量配線
605 容量配線
605a 容量配線
605b 容量配線
607 画素電極
616 ソース配線
616a ソース配線
616b ソース配線
617 容量配線
618 配線
619 配線
622 絶縁層
623 コンタクトホール
624 画素電極層
625 スリット
626 画素電極層
627 コンタクトホール
628 TFT
629 TFT
630 保持容量部
631 保持容量部
636 着色膜
637 平坦化膜
640 対向電極層
641 スリット
644 突起
646 配向膜
648 配向膜
650 液晶層
651 液晶素子
652 液晶素子
661 絶縁層
662 絶縁層
663 絶縁層
664 絶縁層
665 絶縁層
666 絶縁層
690 容量配線
690a 容量配線
690b 容量配線
701 基板
702 共通接続部
704 シール材
705 シール材
706 基板
708 液晶層
710 薄膜トランジスタ
711 薄膜トランジスタ
715 共通接続端子
716 外部端子
730 画素電極
731 対向電極
735 スペーサ
740 導電層
742 層間絶縁膜
780 炉
790 静電気
791 経路
801a グレートーンマスク
801b ハーフトーンマスク
802 透光性基板
803 遮光部
804 回折格子
805 光透過率
806 遮光部
807 半透過部
808 光透過率
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4035 スペーサ
4040 導電層
4041 絶縁層
4042 絶縁層
4043 絶縁層
4044 絶縁層
4045 絶縁層
4046 ソース配線
4501 基板
4502 画素部
4503a 信号線駆動回路
4503b 信号線駆動回路
4504a 走査線駆動回路
4504b 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4518b FPC
4519 異方性導電膜
4520 隔壁
4540 導電層
4541 絶縁層
4542 絶縁層
4543 絶縁層
4544 絶縁層
4545 絶縁層
4546 絶縁層
4547 絶縁層
4548 ソース配線
5300 基板
5301 画素部
5302 走査線駆動回路
5303 走査線駆動回路
5304 信号線駆動回路
5305 タイミング制御回路
5601 シフトレジスタ
5602 スイッチング回路
5603 薄膜トランジスタ
5604 配線
5605 配線
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 TFT
7002 発光素子
7003 陰極
7004 EL層
7005 陽極
7008a ソース配線
7008b ソース配線
7009 隔壁
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 EL層
7015 陽極
7016 遮蔽膜
7017 導電膜
7018a ソース配線
7018b ソース配線
7019 隔壁
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 EL層
7025 陽極
7027 導電膜
7028a ソース配線
7028b ソース配線
7029 隔壁
7031 絶縁層
7032 絶縁層
7033 カラーフィルタ層
7034 オーバーコート層
7035 保護絶縁層
7036 絶縁層
7037 絶縁層
7038 絶縁層
7039 絶縁層
7041 絶縁層
7042 絶縁層
7043 カラーフィルタ層
7044 オーバーコート層
7045 保護絶縁層
7046 絶縁層
7047 絶縁層
7048 絶縁層
7049 絶縁層
7051 絶縁層
7052 絶縁層
7053 平坦化絶縁層
7055 絶縁層
7056 絶縁層
7057 絶縁層
7058 絶縁層
7059 絶縁層
7061 駆動用TFT
7063 カラーフィルタ層
7064 オーバーコート層
7065 保護絶縁層
7067 導電膜
7068a ソース配線
7068b ソース配線
7071 絶縁層
7072 絶縁層
7076 絶縁層
7077 絶縁層
7078 絶縁層
7079 絶縁層
9201 表示部
9202 表示ボタン
9203 操作スイッチ
9204 バンド部
9205 調節部
9206 カメラ部
9207 スピーカ
9208 マイク
9301 上部筐体
9302 下部筐体
9303 表示部
9304 キーボード
9305 外部接続ポート
9306 ポインティングデバイス
9307 表示部
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (5)
- 基板上の窒化珪素を含む第1の絶縁層と、
前記第1の絶縁層上のCuを含む第1の導電層と、
前記第1の導電層上の第2の導電層と、
前記第2の導電層上の窒化珪素を含む第2の絶縁層と、
前記第2の絶縁層上の酸化珪素を含む第3の絶縁層と、
前記第3の絶縁層上の酸化物半導体層と、
前記酸化物半導体層上の窒化珪素を含む第4の絶縁層と、
前記第4の絶縁層上の第3の導電層と、
前記第3の導電層上のCuを含む第4の導電層と、
前記第4の導電層上の窒化珪素を含む第5の絶縁層と、を有し、
前記第3の導電層は、前記第4の絶縁層が有する開口部を介して、前記酸化物半導体層と接する領域を有し、
前記第2の導電層は、W、Ta、Mo、Ti、Crの少なくともいずれか一を含み、
前記第3の導電層は、W、Ta、Mo、Ti、Crの少なくともいずれか一を含み、
前記第1の導電層は、配線として機能することができ、
前記第4の導電層は、配線として機能することができ、
前記酸化物半導体層は、前記酸化物半導体層の表面に対し垂直な方向にC軸が配向している結晶領域を有することを特徴とする半導体装置。 - 基板上の窒化珪素を含む第1の絶縁層と、
前記第1の絶縁層上のCuを含む第1の導電層と、
前記第1の導電層上の第2の導電層と、
前記第2の導電層上の窒化珪素を含む第2の絶縁層と、
前記第2の絶縁層上の酸化珪素を含む第3の絶縁層と、
前記第3の絶縁層上の酸化物半導体層と、
前記酸化物半導体層上の窒化珪素を含む第4の絶縁層と、
前記第4の絶縁層上の第3の導電層と、
前記第3の導電層上のCuを含む第4の導電層と、
前記第4の導電層上の窒化珪素を含む第5の絶縁層と、
前記第5の絶縁層上の第5の導電層と、を有し、
前記第5の導電層は、透明導電性材料を含み、
前記第3の導電層は、前記第4の絶縁層が有する開口部を介して、前記酸化物半導体層と接する領域を有し、
前記第2の導電層は、W、Ta、Mo、Ti、Crの少なくともいずれか一を含み、
前記第3の導電層は、W、Ta、Mo、Ti、Crの少なくともいずれか一を含み、
前記第1の導電層は、配線として機能することができ、
前記第4の導電層は、配線として機能することができ、
前記酸化物半導体層は、前記酸化物半導体層の表面に対し垂直な方向にC軸が配向している結晶領域を有することを特徴とする半導体装置。 - 請求項1または請求項2において、
前記第1の導電層は、W、Ta、Mo、Ti、Cr、Al、Zr、Caの少なくともいずれか一を含むことを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第4の導電層は、W、Ta、Mo、Ti、Cr、Al、Zr、Caの少なくともいずれか一を含むことを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一項において、
前記酸化物半導体層は、In、Ga、Znの少なくともいずれか一を含むことを特徴とする半導体装置。
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