JP5615639B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP5615639B2
JP5615639B2 JP2010207657A JP2010207657A JP5615639B2 JP 5615639 B2 JP5615639 B2 JP 5615639B2 JP 2010207657 A JP2010207657 A JP 2010207657A JP 2010207657 A JP2010207657 A JP 2010207657A JP 5615639 B2 JP5615639 B2 JP 5615639B2
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layer
light
transistor
oxide
electrode layer
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JP2011085923A (ja
JP2011085923A5 (ja
Inventor
江口　晋吾
晋吾 江口
欣聡 及川
欣聡 及川
岡崎　健一
健一 岡崎
穂高 丸山
穂高 丸山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Optical Filters (AREA)
JP2010207657A 2009-09-16 2010-09-16 発光装置の作製方法 Active JP5615639B2 (ja)

Priority Applications (1)

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JP2010207657A JP5615639B2 (ja) 2009-09-16 2010-09-16 発光装置の作製方法

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Application Number Priority Date Filing Date Title
JP2009215053 2009-09-16
JP2009215053 2009-09-16
JP2010207657A JP5615639B2 (ja) 2009-09-16 2010-09-16 発光装置の作製方法

Related Child Applications (1)

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JP2014183830A Division JP5841214B2 (ja) 2009-09-16 2014-09-10 発光装置の作製方法

Publications (3)

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JP2011085923A JP2011085923A (ja) 2011-04-28
JP2011085923A5 JP2011085923A5 (ja) 2013-10-10
JP5615639B2 true JP5615639B2 (ja) 2014-10-29

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Family Applications (9)

Application Number Title Priority Date Filing Date
JP2010207657A Active JP5615639B2 (ja) 2009-09-16 2010-09-16 発光装置の作製方法
JP2014183830A Active JP5841214B2 (ja) 2009-09-16 2014-09-10 発光装置の作製方法
JP2015221737A Withdrawn JP2016075917A (ja) 2009-09-16 2015-11-12 表示装置
JP2017052349A Withdrawn JP2017146608A (ja) 2009-09-16 2017-03-17 電子機器
JP2018232118A Withdrawn JP2019049754A (ja) 2009-09-16 2018-12-12 電子機器の作製方法
JP2021064190A Withdrawn JP2021152655A (ja) 2009-09-16 2021-04-05 発光装置
JP2022171179A Withdrawn JP2023001175A (ja) 2009-09-16 2022-10-26 電子機器
JP2024081648A Withdrawn JP2024098069A (ja) 2009-09-16 2024-05-20 電子機器
JP2025095590A Pending JP2025120342A (ja) 2009-09-16 2025-06-09 半導体装置

Family Applications After (8)

Application Number Title Priority Date Filing Date
JP2014183830A Active JP5841214B2 (ja) 2009-09-16 2014-09-10 発光装置の作製方法
JP2015221737A Withdrawn JP2016075917A (ja) 2009-09-16 2015-11-12 表示装置
JP2017052349A Withdrawn JP2017146608A (ja) 2009-09-16 2017-03-17 電子機器
JP2018232118A Withdrawn JP2019049754A (ja) 2009-09-16 2018-12-12 電子機器の作製方法
JP2021064190A Withdrawn JP2021152655A (ja) 2009-09-16 2021-04-05 発光装置
JP2022171179A Withdrawn JP2023001175A (ja) 2009-09-16 2022-10-26 電子機器
JP2024081648A Withdrawn JP2024098069A (ja) 2009-09-16 2024-05-20 電子機器
JP2025095590A Pending JP2025120342A (ja) 2009-09-16 2025-06-09 半導体装置

Country Status (5)

Country Link
US (7) US8377762B2 (https=)
JP (9) JP5615639B2 (https=)
KR (11) KR102369012B1 (https=)
TW (3) TWI636549B (https=)
WO (1) WO2011034068A1 (https=)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7888702B2 (en) * 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
WO2011004723A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
KR102369012B1 (ko) 2009-09-16 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
WO2011043163A1 (en) * 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102295450B1 (ko) * 2009-10-09 2021-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102142450B1 (ko) 2009-10-30 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2012002104A1 (en) * 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101426515B1 (ko) * 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
US8953120B2 (en) * 2011-01-07 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Display device
US9082860B2 (en) * 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5766491B2 (ja) * 2011-04-11 2015-08-19 株式会社Ｊｏｌｅｄ 発光パネル、表示装置および電子機器
TWI532822B (zh) * 2011-04-29 2016-05-11 半導體能源研究所股份有限公司 利用磷光之發光裝置，電子裝置及照明裝置
CN102779942B (zh) * 2011-05-24 2015-11-25 京东方科技集团股份有限公司 一种有机薄膜晶体管阵列基板及其制作方法
TWI514572B (zh) * 2011-06-10 2015-12-21 E Ink Holdings Inc 金屬氧化物半導體電晶體
JP6099336B2 (ja) 2011-09-14 2017-03-22 株式会社半導体エネルギー研究所 発光装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP6059968B2 (ja) * 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
KR102072244B1 (ko) * 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI556319B (zh) * 2011-11-30 2016-11-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6214132B2 (ja) * 2012-02-29 2017-10-18 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
KR101942515B1 (ko) * 2012-05-03 2019-01-28 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
JP2013251255A (ja) 2012-05-04 2013-12-12 Semiconductor Energy Lab Co Ltd 発光装置の作製方法
CN102751240B (zh) * 2012-05-18 2015-03-11 京东方科技集团股份有限公司 薄膜晶体管阵列基板及其制造方法、显示面板、显示装置
US8704232B2 (en) 2012-06-12 2014-04-22 Apple Inc. Thin film transistor with increased doping regions
US9065077B2 (en) 2012-06-15 2015-06-23 Apple, Inc. Back channel etch metal-oxide thin film transistor and process
KR102198029B1 (ko) * 2012-06-15 2021-01-05 소니 주식회사 표시 장치, 반도체 장치 및 표시 장치의 제조 방법
TWI669835B (zh) 2012-07-05 2019-08-21 日商半導體能源研究所股份有限公司 發光裝置
KR102891143B1 (ko) * 2012-08-10 2025-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 정보 단말 기기
US8987027B2 (en) 2012-08-31 2015-03-24 Apple Inc. Two doping regions in lightly doped drain for thin film transistors and associated doping processes
US9685557B2 (en) 2012-08-31 2017-06-20 Apple Inc. Different lightly doped drain length control for self-align light drain doping process
US8748320B2 (en) * 2012-09-27 2014-06-10 Apple Inc. Connection to first metal layer in thin film transistor process
US8999771B2 (en) 2012-09-28 2015-04-07 Apple Inc. Protection layer for halftone process of third metal
US9201276B2 (en) 2012-10-17 2015-12-01 Apple Inc. Process architecture for color filter array in active matrix liquid crystal display
KR101976133B1 (ko) * 2012-11-20 2019-05-08 삼성디스플레이 주식회사 표시 장치
US9001297B2 (en) 2013-01-29 2015-04-07 Apple Inc. Third metal layer for thin film transistor with reduced defects in liquid crystal display
US9088003B2 (en) 2013-03-06 2015-07-21 Apple Inc. Reducing sheet resistance for common electrode in top emission organic light emitting diode display
CN104058363B (zh) * 2013-03-22 2016-01-20 上海丽恒光微电子科技有限公司 基于mems透射光阀的显示装置及其形成方法
JP6300589B2 (ja) * 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6198434B2 (ja) * 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 表示装置及び電子機器
KR20240067959A (ko) * 2013-04-15 2024-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US10628103B2 (en) 2013-06-07 2020-04-21 Semiconductor Energy Laboratory Co., Ltd. Information processor and program
US9818763B2 (en) 2013-07-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
CN108615744A (zh) 2013-07-12 2018-10-02 株式会社半导体能源研究所 发光装置
US10529740B2 (en) * 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
KR20150021000A (ko) * 2013-08-19 2015-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US10008513B2 (en) * 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102176719B1 (ko) * 2013-10-14 2020-11-10 삼성디스플레이 주식회사 플렉서블 표시판 및 그 제조 방법
US9430180B2 (en) 2013-11-15 2016-08-30 Semiconductor Energy Laboratory Co., Ltd Display panel and electronic device
DE112014007423B4 (de) * 2013-12-02 2026-04-16 Semiconductor Energy Laboratory Co., Ltd. Licht emittierendes Element und Licht emittierende Vorrichtung
KR102462742B1 (ko) 2013-12-02 2022-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
JP6570825B2 (ja) 2013-12-12 2019-09-04 株式会社半導体エネルギー研究所 電子機器
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112015000866T5 (de) * 2014-02-19 2016-11-17 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung und Ablöseverfahren
US9660004B2 (en) * 2014-03-21 2017-05-23 Apple Inc. Flexible displays with strengthened pad area
US10032802B2 (en) * 2014-05-02 2018-07-24 Joled Inc. Thin-film transistor device and display device using same
US9455281B2 (en) * 2014-06-19 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, touch panel module, and display device
JP6497858B2 (ja) * 2014-07-11 2019-04-10 株式会社ジャパンディスプレイ 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
JP6586090B2 (ja) 2014-08-07 2019-10-02 株式会社半導体エネルギー研究所 運転支援システム
WO2016033704A1 (zh) 2014-09-02 2016-03-10 深圳市柔宇科技有限公司 显示模组及具有该显示模组的电子装置
KR101921010B1 (ko) * 2014-09-02 2018-11-21 선전 로욜 테크놀로지스 컴퍼니 리미티드 디스플레이 모듈 및 상기 디스플레이 모듈을 구비하는 전자 장치
JP6451979B2 (ja) * 2014-10-11 2019-01-16 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 表示素子およびそれを用いた携帯型情報装置
TWI696108B (zh) 2015-02-13 2020-06-11 日商半導體能源研究所股份有限公司 功能面板、功能模組、發光模組、顯示模組、位置資料輸入模組、發光裝置、照明設備、顯示裝置、資料處理裝置、功能面板的製造方法
KR102479019B1 (ko) 2015-03-05 2022-12-19 삼성디스플레이 주식회사 플렉서블 표시장치
JP6392149B2 (ja) 2015-03-18 2018-09-19 株式会社ジャパンディスプレイ 表示装置、表示装置の製造方法
JP2017010000A (ja) 2015-04-13 2017-01-12 株式会社半導体エネルギー研究所 表示装置
US9666655B2 (en) 2015-05-05 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101966634B1 (ko) * 2015-11-02 2019-04-08 동우 화인켐 주식회사 필름 터치 센서
JP6486819B2 (ja) * 2015-12-25 2019-03-20 株式会社ジャパンディスプレイ 表示装置
KR102560317B1 (ko) * 2015-12-29 2023-07-28 삼성디스플레이 주식회사 유기 발광 표시 장치
US10361385B2 (en) 2016-02-12 2019-07-23 Samsung Display Co., Ltd. Display device
KR102471130B1 (ko) * 2016-02-17 2022-11-29 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR102536250B1 (ko) * 2016-03-17 2023-05-25 삼성디스플레이 주식회사 디스플레이 장치
KR102505879B1 (ko) 2016-03-24 2023-03-06 삼성디스플레이 주식회사 디스플레이 장치
CN109716421B (zh) * 2016-09-14 2021-05-04 夏普株式会社 安装基板及显示面板
CN106373923B (zh) * 2016-11-30 2021-02-26 Tcl科技集团股份有限公司 柔性显示面板及其制作方法和电子产品及其显示器
KR102772195B1 (ko) * 2017-02-28 2025-02-26 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
TW201941676A (zh) * 2018-02-01 2019-10-16 理察 麥卡特尼 用以建構客製化顯示器面板的方法、系統和設備
WO2019175704A1 (ja) * 2018-03-16 2019-09-19 株式会社半導体エネルギー研究所 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法
JP2019163228A (ja) * 2018-03-20 2019-09-26 株式会社東芝 金属有機構造体、蛍光体膜、および分子検出装置
JP2019169660A (ja) * 2018-03-26 2019-10-03 三菱電機株式会社 薄膜トランジスタ基板、表示装置、および、薄膜トランジスタ基板の製造方法
CN108922406B (zh) * 2018-08-22 2020-11-03 京东方科技集团股份有限公司 一种柔性盖板、有机显示面板、显示装置及制作方法
EP3878609B1 (en) * 2018-11-20 2024-10-30 MELTIN Inc. Robot hand device
CN110459660B (zh) * 2019-08-06 2021-04-16 天津三安光电有限公司 一种发光二极管及制作工艺、发光装置
EP3785897B1 (en) 2019-08-29 2021-12-29 SHPP Global Technologies B.V. Transparent, flexible, impact resistant, multilayer film comprising polycarbonate copolymers
CN110706629B (zh) * 2019-09-27 2023-08-29 京东方科技集团股份有限公司 显示基板的检测方法和检测装置
US10847083B1 (en) * 2019-10-14 2020-11-24 Shaoher Pan Integrated active-matrix light emitting pixel arrays based devices by laser-assisted bonding
US11011669B2 (en) * 2019-10-14 2021-05-18 Shaoher Pan Integrated active-matrix light emitting pixel arrays based devices
JP2020167174A (ja) * 2020-06-29 2020-10-08 株式会社半導体エネルギー研究所 発光装置
KR102871406B1 (ko) * 2020-12-03 2025-10-14 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US12402496B2 (en) 2020-12-24 2025-08-26 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2022246714A1 (zh) 2021-05-26 2022-12-01 京东方科技集团股份有限公司 显示面板、显示装置
KR20230120268A (ko) 2022-02-09 2023-08-17 주식회사 마이크로필터 필터 어셈블리
CN114944418B (zh) * 2022-06-27 2025-04-29 深圳市华星光电半导体显示技术有限公司 Oled显示面板
KR102919684B1 (ko) 2023-02-22 2026-01-28 정상훈 필터 어셈블리 및 이를 포함하는 정수 공급장치, 살균 시스템
KR102941612B1 (ko) 2023-02-22 2026-03-18 정상훈 필터 어셈블리 및 이를 포함하는 정수 여과장치
CN118155562A (zh) * 2024-04-18 2024-06-07 合肥京东方卓印科技有限公司 像素电路、显示基板及其暗点修复方法
KR102923845B1 (ko) 2024-06-19 2026-02-09 에이치비페이퍼 주식회사 흡음벽 설치용 허니컴 보드 스피커
KR20260000603A (ko) 2024-06-25 2026-01-05 주식회사 마이크로필터 필터 어셈블리 및 이를 포함하는 정수 공급장치

Family Cites Families (292)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3315111A (en) * 1966-06-09 1967-04-18 Gen Electric Flexible electroluminescent device and light transmissive electrically conductive electrode material therefor
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
US5189405A (en) * 1989-01-26 1993-02-23 Sharp Kabushiki Kaisha Thin film electroluminescent panel
US5048118A (en) * 1989-07-10 1991-09-10 Motorola, Inc. Combination dual loop antenna and bezel with detachable lens cap
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
US5747928A (en) * 1994-10-07 1998-05-05 Iowa State University Research Foundation, Inc. Flexible panel display having thin film transistors driving polymer light-emitting diodes
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
US6195142B1 (en) * 1995-12-28 2001-02-27 Matsushita Electrical Industrial Company, Ltd. Organic electroluminescence element, its manufacturing method, and display device using organic electroluminescence element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US6297838B1 (en) * 1997-08-29 2001-10-02 Xerox Corporation Spinning as a morpheme for a physical manipulatory grammar
JPH11126029A (ja) * 1997-10-22 1999-05-11 Yazaki Corp 表示器
JP2006237624A (ja) * 1998-06-12 2006-09-07 Semiconductor Energy Lab Co Ltd 半導体装置及びインバータ回路
JP2001051292A (ja) 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
US6111357A (en) * 1998-07-09 2000-08-29 Eastman Kodak Company Organic electroluminescent display panel having a cover with radiation-cured perimeter seal
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
US7022556B1 (en) * 1998-11-11 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Exposure device, exposure method and method of manufacturing semiconductor device
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TWI232595B (en) * 1999-06-04 2005-05-11 Semiconductor Energy Lab Electroluminescence display device and electronic device
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
TW468283B (en) * 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
JP2001210919A (ja) * 1999-11-17 2001-08-03 Sharp Corp フレキシブル配線板およびそれを用いた電子機器
US7060153B2 (en) * 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
US6220916B1 (en) * 2000-01-21 2001-04-24 Philip D. Bart Toy band with pre-recorded message
US7370983B2 (en) * 2000-03-02 2008-05-13 Donnelly Corporation Interior mirror assembly with display
US6611108B2 (en) * 2000-04-26 2003-08-26 Semiconductor Energy Laboratory Co., Ltd. Electronic device and driving method thereof
JP4178725B2 (ja) * 2000-06-26 2008-11-12 コニカミノルタホールディングス株式会社 電子機器
US6605826B2 (en) * 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP4304852B2 (ja) 2000-09-04 2009-07-29 コニカミノルタホールディングス株式会社 非平面液晶表示素子及びその製造方法
JP2002175877A (ja) * 2000-09-27 2002-06-21 Seiko Epson Corp 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法、電子機器
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US7289083B1 (en) * 2000-11-30 2007-10-30 Palm, Inc. Multi-sided display for portable computer
US6822391B2 (en) * 2001-02-21 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic equipment, and method of manufacturing thereof
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
US6664137B2 (en) * 2001-03-29 2003-12-16 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
US6943773B2 (en) * 2001-05-11 2005-09-13 Palmone, Inc. Page flicking mechanism for electronic display devices that paginate content
US7211828B2 (en) * 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
AT412176B (de) * 2001-06-26 2004-10-25 Keba Ag Tragbare vorrichtung zumindest zur visualisierung von prozessdaten einer maschine, eines roboters oder eines technischen prozesses
TW546857B (en) 2001-07-03 2003-08-11 Semiconductor Energy Lab Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment
JP2003029293A (ja) 2001-07-13 2003-01-29 Minolta Co Ltd 積層型表示装置及びその製造方法
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US7026758B2 (en) * 2001-09-28 2006-04-11 Osram Opto Semiconductors Gmbh Reinforcement of glass substrates in flexible devices
KR100944886B1 (ko) * 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
AU2002360518A1 (en) * 2001-12-12 2003-06-23 Universal Display Corporation Intelligent multi-media display communication system
US7050835B2 (en) 2001-12-12 2006-05-23 Universal Display Corporation Intelligent multi-media display communication system
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
KR100769783B1 (ko) * 2002-03-29 2007-10-24 가부시끼가이샤 도시바 표시 입력 장치 및 표시 입력 시스템
JP2004006313A (ja) * 2002-04-18 2004-01-08 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、および電子機器
JP2004047975A (ja) * 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd 積層体の転写方法及び半導体装置の作製方法
JP4104489B2 (ja) * 2002-05-17 2008-06-18 東芝松下ディスプレイテクノロジー株式会社 表示装置及びその製造方法
DE60325669D1 (de) 2002-05-17 2009-02-26 Semiconductor Energy Lab Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7091110B2 (en) * 2002-06-12 2006-08-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device by gettering using a anti-diffusion layer
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP4723787B2 (ja) 2002-07-09 2011-07-13 シャープ株式会社 電界効果型トランジスタ、その製造方法及び画像表示装置
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP2004140267A (ja) 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
AU2003275614A1 (en) 2002-10-30 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2004040649A1 (ja) * 2002-11-01 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
EP1565782A1 (en) 2002-11-22 2005-08-24 Koninklijke Philips Electronics N.V. Method of manufacturing a curved display
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
US20040135160A1 (en) * 2003-01-10 2004-07-15 Eastman Kodak Company OLED device
KR101033797B1 (ko) * 2003-01-15 2011-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법
JP4801579B2 (ja) * 2003-01-15 2011-10-26 株式会社半導体エネルギー研究所 発光装置の作製方法
CN1739129A (zh) 2003-01-15 2006-02-22 株式会社半导体能源研究所 剥离方法及采用该剥离方法的显示装置的制造方法
JP4574118B2 (ja) * 2003-02-12 2010-11-04 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP2004247533A (ja) * 2003-02-14 2004-09-02 Casio Comput Co Ltd アクティブマトリックスパネル
JP3594034B1 (ja) * 2003-03-04 2004-11-24 セイコーエプソン株式会社 電波修正時計
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP2004281086A (ja) * 2003-03-12 2004-10-07 Nippon Hoso Kyokai <Nhk> フレキシブルフルカラー有機ｅｌディスプレイおよびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005085705A (ja) * 2003-09-10 2005-03-31 Seiko Epson Corp 電気デバイス及びその製造方法、電子機器
JP2005174006A (ja) * 2003-12-11 2005-06-30 Canon Inc 表示装置
US7727854B2 (en) * 2003-12-19 2010-06-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2005250442A (ja) * 2004-01-30 2005-09-15 Seiko Epson Corp 表示装置、表示装置の制御方法、制御プログラムおよび記録媒体
JP2005251671A (ja) * 2004-03-08 2005-09-15 Fuji Photo Film Co Ltd 表示装置
JP4466134B2 (ja) * 2004-03-09 2010-05-26 株式会社デンソー 表示装置
KR20070116888A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7521368B2 (en) 2004-05-07 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5025095B2 (ja) * 2004-05-07 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JP2006072115A (ja) * 2004-09-03 2006-03-16 Fuji Photo Film Co Ltd 画像表示装置
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
BRPI0517560B8 (pt) 2004-11-10 2018-12-11 Canon Kk transistor de efeito de campo
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
EP2453481B1 (en) 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CA2585063C (en) 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
US20060118869A1 (en) 2004-12-03 2006-06-08 Je-Hsiung Lan Thin-film transistors and processes for forming the same
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7608531B2 (en) 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
JP4777203B2 (ja) * 2005-01-28 2011-09-21 株式会社半導体エネルギー研究所 半導体装置
TWI505473B (zh) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7566633B2 (en) * 2005-02-25 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
JP2007078670A (ja) * 2005-03-04 2007-03-29 Seiko Epson Corp 装着型電子機器、携帯機器の製造方法及び携帯機器
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
US7558057B1 (en) * 2005-06-06 2009-07-07 Alex Naksen Personal digital device with adjustable interface
US7368307B2 (en) * 2005-06-07 2008-05-06 Eastman Kodak Company Method of manufacturing an OLED device with a curved light emitting surface
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US7727859B2 (en) * 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
US7838347B2 (en) * 2005-08-12 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4870403B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
KR100729043B1 (ko) * 2005-09-14 2007-06-14 삼성에스디아이 주식회사 투명 박막 트랜지스터 및 그의 제조방법
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
EP1770676B1 (en) * 2005-09-30 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
EP1935027B1 (en) * 2005-10-14 2017-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI517378B (zh) * 2005-10-17 2016-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5142507B2 (ja) 2005-10-18 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及び当該半導体装置を具備する表示装置並びに電子機器
EP1777689B1 (en) 2005-10-18 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic equipment each having the same
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
JP4781082B2 (ja) * 2005-10-24 2011-09-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7667891B2 (en) * 2005-11-08 2010-02-23 Eastman Kodak Company Desktop display with continuous curved surface
KR20090115222A (ko) * 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP5129473B2 (ja) 2005-11-15 2013-01-30 富士フイルム株式会社 放射線検出器
US7745798B2 (en) 2005-11-15 2010-06-29 Fujifilm Corporation Dual-phosphor flat panel radiation detector
EP1793366A3 (en) * 2005-12-02 2009-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
KR100732849B1 (ko) 2005-12-21 2007-06-27 삼성에스디아이 주식회사 유기 발광 표시장치
KR100771607B1 (ko) 2005-12-21 2007-10-31 엘지전자 주식회사 유기 ｅｌ 디스플레이
JP4481245B2 (ja) * 2005-12-22 2010-06-16 インフォビジョン オプトエレクトロニクス ホールデングズ リミティッド 湾曲液晶表示装置及び湾曲液晶表示装置用反射板または反射シートの形成設置方法
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
JP5239152B2 (ja) 2006-02-02 2013-07-17 セイコーエプソン株式会社 電気光学装置の製造方法、及び電子機器
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
JP2007212699A (ja) * 2006-02-09 2007-08-23 Idemitsu Kosan Co Ltd 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP2007258682A (ja) * 2006-02-24 2007-10-04 Sanyo Electric Co Ltd フレキシブル基板
KR100768208B1 (ko) * 2006-03-14 2007-10-17 삼성에스디아이 주식회사 유연성을 가지는 디스플레이 장치
US8059053B2 (en) * 2006-03-22 2011-11-15 Citizen Holdings Co., Ltd. Antenna and radio-wave receiving device provided with antenna
KR20070101595A (ko) * 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5135709B2 (ja) 2006-04-28 2013-02-06 凸版印刷株式会社 薄膜トランジスタ及びその製造方法
US7785938B2 (en) * 2006-04-28 2010-08-31 Semiconductor Energy Laboratory Co., Ltd Semiconductor integrated circuit, manufacturing method thereof, and semiconductor device using semiconductor integrated circuit
US8900970B2 (en) * 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
JP2007326259A (ja) * 2006-06-07 2007-12-20 Yoshida Industry Co Ltd ディスプレイの製造方法及びディスプレイ
GB0611452D0 (en) * 2006-06-12 2006-07-19 Plastic Logic Ltd Page refreshing e-reader
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
CN101479747B (zh) * 2006-06-26 2011-05-18 株式会社半导体能源研究所 包括半导体器件的纸及其制造方法
JP2008008832A (ja) * 2006-06-30 2008-01-17 Seiko Epson Corp 時計
US7920234B2 (en) * 2006-06-30 2011-04-05 Lg Display Co., Ltd. Transflective type liquid crystal display device
KR20080006304A (ko) 2006-07-12 2008-01-16 삼성전자주식회사 유기 발광 표시 장치 및 그 제조 방법
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
KR20080016271A (ko) 2006-08-18 2008-02-21 삼성전자주식회사 유기 발광 표시 장치 및 그 제조 방법
JP5079425B2 (ja) * 2006-08-31 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
TWI433306B (zh) 2006-09-29 2014-04-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP2008089884A (ja) 2006-09-29 2008-04-17 Toshiba Corp 表示素子
US7722245B2 (en) * 2006-10-06 2010-05-25 Seiko Epson Corporation Display device
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
KR20080032842A (ko) * 2006-10-11 2008-04-16 삼성전자주식회사 평판표시패널을 구비한 전자기기
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
US7518959B2 (en) * 2006-12-01 2009-04-14 Seiko Epson Corporation Display device and display method
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
JP5108293B2 (ja) * 2006-12-20 2012-12-26 富士フイルム株式会社 携帯機器及び撮像装置
JP2008159309A (ja) 2006-12-21 2008-07-10 Sony Corp 発光装置およびその製造方法、ならびに表示装置
JP5258277B2 (ja) 2006-12-26 2013-08-07 株式会社半導体エネルギー研究所 液晶表示装置
US8514165B2 (en) 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7889139B2 (en) * 2007-06-21 2011-02-15 Apple Inc. Handheld electronic device with cable grounding
US7756553B2 (en) * 2007-01-05 2010-07-13 Apple Inc. Folded flex assembly for personal media device
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
KR101360206B1 (ko) 2007-03-16 2014-02-10 엘지전자 주식회사 단말기 하우징 및 이를 갖는 이동통신 단말기
KR101310757B1 (ko) * 2007-03-16 2013-09-25 엘지전자 주식회사 휴대 단말기
JP2008242249A (ja) 2007-03-28 2008-10-09 Kyodo Printing Co Ltd フレキシブルディスプレイ
WO2008126250A1 (ja) * 2007-03-30 2008-10-23 Pioneer Corporation 発光装置
JP5197058B2 (ja) * 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
JP2009031742A (ja) 2007-04-10 2009-02-12 Fujifilm Corp 有機電界発光表示装置
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
EP2140480A4 (en) 2007-04-20 2015-04-22 Semiconductor Energy Lab METHOD FOR PRODUCING AN SOI SUBSTRATE AND SEMICONDUCTOR ARRANGEMENT
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
JP2008310312A (ja) * 2007-05-17 2008-12-25 Fujifilm Corp 有機電界発光表示装置
KR101345376B1 (ko) * 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8173989B2 (en) 2007-05-30 2012-05-08 Samsung Electronics Co., Ltd. Resistive random access memory device and methods of manufacturing and operating the same
US7990060B2 (en) * 2007-05-31 2011-08-02 Lg Display Co., Ltd. Organic light emitting display device and method of manufacturing the same
GB2449682A (en) * 2007-06-01 2008-12-03 Sharp Kk Optical system for converting a flat image to a non-flat image
EP2001047A1 (en) * 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR101415561B1 (ko) * 2007-06-14 2014-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US20090001360A1 (en) 2007-06-29 2009-01-01 Masaya Nakayama Organic el display and method for producing the same
JP5330739B2 (ja) 2007-06-29 2013-10-30 ユー・ディー・シー アイルランド リミテッド 有機ｅｌ表示装置およびその製造方法
EP2164310A4 (en) * 2007-07-04 2011-01-05 Sharp Kk DISPLAY MODULE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE DISPLAY MODULE
JP5094250B2 (ja) * 2007-07-10 2012-12-12 株式会社ジャパンディスプレイイースト 表示装置
US20110196689A1 (en) * 2007-08-01 2011-08-11 Takumi Otani Handheld terminal, method of dressing it up, and method of delivering dress-up data
KR101576813B1 (ko) 2007-08-17 2015-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP5395384B2 (ja) 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US8208670B2 (en) * 2007-09-17 2012-06-26 Ann Williams Group, LLC Sound recordable/playable device and method of use
JP5354999B2 (ja) 2007-09-26 2013-11-27 キヤノン株式会社 電界効果型トランジスタの製造方法
DE102007048596A1 (de) * 2007-10-10 2009-04-23 Vodafone Holding Gmbh Flexibles elektronisches Gerät und Verfahren zu dessen Steuerung
WO2009057496A1 (ja) * 2007-10-29 2009-05-07 Kyocera Corporation 携帯端末装置
JP2009135448A (ja) 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
JP5489445B2 (ja) * 2007-11-15 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
US8016631B2 (en) * 2007-11-16 2011-09-13 Global Oled Technology Llc Desiccant sealing arrangement for OLED devices
US8223130B2 (en) * 2007-11-28 2012-07-17 Sony Corporation Touch-sensitive sheet member, input device and electronic apparatus
JP5122257B2 (ja) * 2007-11-29 2013-01-16 京セラ株式会社 表示装置および携帯端末装置
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP5178492B2 (ja) 2007-12-27 2013-04-10 株式会社半導体エネルギー研究所 表示装置および当該表示装置を具備する電子機器
JP5437626B2 (ja) 2007-12-28 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US9013367B2 (en) * 2008-01-04 2015-04-21 Nanolumens Acquisition Inc. Flexible display
KR101371998B1 (ko) * 2008-01-25 2014-03-07 삼성전자주식회사 절연체 형성용 조성물 및 이를 이용하는 유기 절연체
JP5489410B2 (ja) * 2008-02-18 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP5540517B2 (ja) 2008-02-22 2014-07-02 凸版印刷株式会社 画像表示装置
US8417298B2 (en) * 2008-04-01 2013-04-09 Apple Inc. Mounting structures for portable electronic devices
KR20090105261A (ko) * 2008-04-02 2009-10-07 삼성전자주식회사 유기 발광 표시 장치 및 그 제조 방법
US7933123B2 (en) * 2008-04-11 2011-04-26 Apple Inc. Portable electronic device with two-piece housing
JP2009265271A (ja) 2008-04-23 2009-11-12 Nippon Shokubai Co Ltd 電気光学表示装置
CN101567916A (zh) * 2008-04-24 2009-10-28 鸿富锦精密工业（深圳）有限公司 便携式电子装置
TWI379261B (en) * 2008-05-16 2012-12-11 Au Optronics Corp Curved display panel and manufacturing method thereof
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2009284018A (ja) * 2008-05-19 2009-12-03 Fujitsu Ltd 情報端末
EP2308093B1 (en) * 2008-08-04 2020-04-15 The Trustees of Princeton University Hybrid dielectric material for thin film transistors
JP5406189B2 (ja) * 2008-08-04 2014-02-05 パナソニック株式会社 フレキシブル半導体装置の製造方法
JP2010039441A (ja) * 2008-08-08 2010-02-18 Hitachi Displays Ltd 液晶表示装置
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US8023261B2 (en) * 2008-09-05 2011-09-20 Apple Inc. Electronic device assembly
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
US8957835B2 (en) * 2008-09-30 2015-02-17 Apple Inc. Head-mounted display apparatus for retaining a portable electronic device with display
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
EP2178133B1 (en) 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
JP2010153813A (ja) 2008-11-18 2010-07-08 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法、並びに、携帯電話機
US8913771B2 (en) * 2009-03-04 2014-12-16 Apple Inc. Portable electronic device having a water exposure indicator label
KR101566432B1 (ko) * 2009-03-05 2015-11-06 삼성디스플레이 주식회사 표시 장치
US20100253902A1 (en) * 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
CA2760158C (en) * 2009-04-26 2016-08-02 Nike International Ltd. Gps features and functionality in an athletic watch system
TWI411848B (zh) * 2009-04-30 2013-10-11 Au Optronics Corp 具複數顯示模組之顯示裝置
CN104597651B (zh) 2009-05-02 2017-12-05 株式会社半导体能源研究所 显示设备
US8911653B2 (en) 2009-05-21 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
TW201110802A (en) * 2009-06-24 2011-03-16 Seiko Epson Corp Electro-optical device, electronic device, and illumination apparatus
US8576209B2 (en) * 2009-07-07 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Display device
CN101996535A (zh) 2009-08-25 2011-03-30 精工爱普生株式会社 电光学装置和电子设备
JP5644075B2 (ja) 2009-08-25 2014-12-24 セイコーエプソン株式会社 電気光学装置、および電子機器
KR20250030527A (ko) 2009-09-04 2025-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011027702A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027701A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027676A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
KR102369012B1 (ko) 2009-09-16 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
CN101739129B (zh) 2009-12-01 2011-09-28 北京航空航天大学 一种具有抓持力反馈的四自由度柔索驱动人机交互装置
US8940429B2 (en) * 2010-07-16 2015-01-27 Apple Inc. Construction of non-rectangular batteries
CN101941299B (zh) 2010-09-03 2013-03-20 北京机电研究所 多工位摩擦螺旋压力机

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