JP4619462B2 - 薄膜素子の転写方法 - Google Patents

薄膜素子の転写方法 Download PDF

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Publication number
JP4619462B2
JP4619462B2 JP31559096A JP31559096A JP4619462B2 JP 4619462 B2 JP4619462 B2 JP 4619462B2 JP 31559096 A JP31559096 A JP 31559096A JP 31559096 A JP31559096 A JP 31559096A JP 4619462 B2 JP4619462 B2 JP 4619462B2
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JP
Japan
Prior art keywords
thin film
substrate
layer
film element
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP31559096A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10125931A5 (enExample
JPH10125931A (ja
Inventor
達也 下田
聡 井上
和加雄 宮沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP31559096A priority Critical patent/JP4619462B2/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to CNA031579647A priority patent/CN1495523A/zh
Priority to KR10-1998-0703007A priority patent/KR100481994B1/ko
Priority to EP06076860A priority patent/EP1758169A3/en
Priority to KR10-2004-7015277A priority patent/KR100500520B1/ko
Priority to US09/051,966 priority patent/US6372608B1/en
Priority to TW086112252A priority patent/TW360901B/zh
Priority to EP97935891A priority patent/EP0858110B1/en
Priority to EP06075225A priority patent/EP1655633A3/en
Priority to DE69737086T priority patent/DE69737086T2/de
Priority to DE69739376T priority patent/DE69739376D1/de
Priority to CNB971911347A priority patent/CN1143394C/zh
Priority to EP03076869A priority patent/EP1351308B1/en
Priority to EP06076859A priority patent/EP1744365B1/en
Priority to DE69739368T priority patent/DE69739368D1/de
Priority to PCT/JP1997/002972 priority patent/WO1998009333A1/ja
Publication of JPH10125931A publication Critical patent/JPH10125931A/ja
Priority to US09/113,373 priority patent/US6127199A/en
Priority to US10/091,562 priority patent/US6645830B2/en
Priority to US10/263,070 priority patent/USRE38466E1/en
Priority to US10/420,840 priority patent/US6818530B2/en
Priority to US10/748,206 priority patent/USRE40601E1/en
Priority to US10/851,202 priority patent/US7094665B2/en
Publication of JPH10125931A5 publication Critical patent/JPH10125931A5/ja
Priority to US11/242,017 priority patent/US7285476B2/en
Priority to US11/514,985 priority patent/US7468308B2/en
Application granted granted Critical
Publication of JP4619462B2 publication Critical patent/JP4619462B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

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  • Thin Film Transistor (AREA)
JP31559096A 1996-08-27 1996-11-12 薄膜素子の転写方法 Expired - Fee Related JP4619462B2 (ja)

Priority Applications (24)

Application Number Priority Date Filing Date Title
JP31559096A JP4619462B2 (ja) 1996-08-27 1996-11-12 薄膜素子の転写方法
PCT/JP1997/002972 WO1998009333A1 (fr) 1996-08-27 1997-08-26 Methode de separation, procede de transfert d'un dispositif a film mince, dispositif a film mince, dispositif a circuit integre a film mince et dispositif d'affichage a cristaux liquides obtenu par application du procede de transfert
EP06076860A EP1758169A3 (en) 1996-08-27 1997-08-26 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
KR10-2004-7015277A KR100500520B1 (ko) 1996-08-27 1997-08-26 전사 방법 및 액티브 매트릭스 기판 제조 방법
US09/051,966 US6372608B1 (en) 1996-08-27 1997-08-26 Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method
TW086112252A TW360901B (en) 1996-08-27 1997-08-26 Method of peeling thin-film device, method of transferring thin-film device, thin-film device thereby, thin-film IC circuit device, and liquid crystal display device
EP97935891A EP0858110B1 (en) 1996-08-27 1997-08-26 Separating method, method for transferring thin film device, and liquid crystal display device manufactured by using the transferring method
EP06075225A EP1655633A3 (en) 1996-08-27 1997-08-26 Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device
DE69737086T DE69737086T2 (de) 1996-08-27 1997-08-26 Trennverfahren, verfahren zur übertragung eines dünnfilmbauelements, und unter verwendung des übertragungsverfahrens hergestelltes flüssigkristall-anzeigebauelement
KR10-1998-0703007A KR100481994B1 (ko) 1996-08-27 1997-08-26 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치
CNB971911347A CN1143394C (zh) 1996-08-27 1997-08-26 剥离方法、溥膜器件的转移方法和薄膜器件
EP03076869A EP1351308B1 (en) 1996-08-27 1997-08-26 Exfoliating method and transferring method of thin film device
CNA031579647A CN1495523A (zh) 1996-08-27 1997-08-26 转移方法和有源矩阵基板的制造方法
DE69739368T DE69739368D1 (de) 1996-08-27 1997-08-26 Trennverfahren und Verfahren zur Übertragung eines Dünnfilmbauelements
EP06076859A EP1744365B1 (en) 1996-08-27 1997-08-26 Exfoliating method and transferring method of thin film device
DE69739376T DE69739376D1 (de) 1996-08-27 1997-08-26 Ablösungsverfahren und Verfahren zum Übertragen eines Dünnfilm-Bauelements
US09/113,373 US6127199A (en) 1996-11-12 1998-07-10 Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
US10/091,562 US6645830B2 (en) 1996-08-27 2002-03-07 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same
US10/263,070 USRE38466E1 (en) 1996-11-12 2002-10-03 Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
US10/420,840 US6818530B2 (en) 1996-08-27 2003-04-23 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US10/748,206 USRE40601E1 (en) 1996-11-12 2003-12-31 Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
US10/851,202 US7094665B2 (en) 1996-08-27 2004-05-24 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US11/242,017 US7285476B2 (en) 1996-08-27 2005-10-04 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US11/514,985 US7468308B2 (en) 1996-08-27 2006-09-05 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22564396 1996-08-27
JP8-225643 1996-08-27
JP31559096A JP4619462B2 (ja) 1996-08-27 1996-11-12 薄膜素子の転写方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2003382676A Division JP4619645B2 (ja) 1996-08-27 2003-11-12 薄膜素子の転写方法
JP2003382675A Division JP3809833B2 (ja) 1996-08-27 2003-11-12 薄膜素子の転写方法
JP2003382674A Division JP4619644B2 (ja) 1996-08-27 2003-11-12 薄膜素子の転写方法

Publications (3)

Publication Number Publication Date
JPH10125931A JPH10125931A (ja) 1998-05-15
JPH10125931A5 JPH10125931A5 (enExample) 2004-11-11
JP4619462B2 true JP4619462B2 (ja) 2011-01-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP31559096A Expired - Fee Related JP4619462B2 (ja) 1996-08-27 1996-11-12 薄膜素子の転写方法

Country Status (1)

Country Link
JP (1) JP4619462B2 (enExample)

Families Citing this family (181)

* Cited by examiner, † Cited by third party
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DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
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JP4019305B2 (ja) * 2001-07-13 2007-12-12 セイコーエプソン株式会社 薄膜装置の製造方法
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